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GB2344457B - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB2344457B
GB2344457B GB9826514A GB9826514A GB2344457B GB 2344457 B GB2344457 B GB 2344457B GB 9826514 A GB9826514 A GB 9826514A GB 9826514 A GB9826514 A GB 9826514A GB 2344457 B GB2344457 B GB 2344457B
Authority
GB
United Kingdom
Prior art keywords
semiconductor devices
semiconductor
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9826514A
Other versions
GB2344457A (en
GB9826514D0 (en
Inventor
Wang Nang Wang
Stephen Sen-Tien Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arima Optoelectronics Corp
Original Assignee
Arima Optoelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Arima Optoelectronics Corp filed Critical Arima Optoelectronics Corp
Priority to GB9826514A priority Critical patent/GB2344457B/en
Publication of GB9826514D0 publication Critical patent/GB9826514D0/en
Priority to US09/453,980 priority patent/US6396862B1/en
Priority to JP34342399A priority patent/JP2000174331A/en
Publication of GB2344457A publication Critical patent/GB2344457A/en
Application granted granted Critical
Publication of GB2344457B publication Critical patent/GB2344457B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
GB9826514A 1998-12-02 1998-12-02 Semiconductor devices Expired - Fee Related GB2344457B (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB9826514A GB2344457B (en) 1998-12-02 1998-12-02 Semiconductor devices
US09/453,980 US6396862B1 (en) 1998-12-02 1999-12-02 LED with spreading layer
JP34342399A JP2000174331A (en) 1998-12-02 1999-12-02 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9826514A GB2344457B (en) 1998-12-02 1998-12-02 Semiconductor devices

Publications (3)

Publication Number Publication Date
GB9826514D0 GB9826514D0 (en) 1999-01-27
GB2344457A GB2344457A (en) 2000-06-07
GB2344457B true GB2344457B (en) 2000-12-27

Family

ID=10843530

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9826514A Expired - Fee Related GB2344457B (en) 1998-12-02 1998-12-02 Semiconductor devices

Country Status (3)

Country Link
US (1) US6396862B1 (en)
JP (1) JP2000174331A (en)
GB (1) GB2344457B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100438110C (en) * 2006-12-29 2008-11-26 北京太时芯光科技有限公司 LED with the current transfer penetration-enhanced window layer structure
JP4903643B2 (en) * 2007-07-12 2012-03-28 株式会社東芝 Semiconductor light emitting device
EP2043210A3 (en) * 2007-09-28 2010-12-22 OSRAM Opto Semiconductors GmbH Semiconductor laser and method for producing the semiconductor laser
DE102007062050B4 (en) 2007-09-28 2019-06-27 Osram Opto Semiconductors Gmbh Semiconductor laser and method of making the semiconductor laser
US8507929B2 (en) * 2008-06-16 2013-08-13 Koninklijke Philips Electronics N.V. Semiconductor light emitting device including graded region
CN105914265B (en) * 2016-05-05 2018-08-31 厦门市三安光电科技有限公司 A kind of GaAs based light-emitting diodes and preparation method thereof
CN108767658B (en) * 2018-07-05 2020-02-21 深圳瑞波光电子有限公司 Manufacturing method of semiconductor laser, semiconductor laser and bar

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0373933A2 (en) * 1988-12-14 1990-06-20 Kabushiki Kaisha Toshiba Manufacturing method of semiconductor laser with non-absorbing mirror structure
US5466950A (en) * 1993-09-24 1995-11-14 Kabushiki Kaisha Toshiba Semiconductor light emitting device with short wavelength light selecting means

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2703784B2 (en) 1988-11-08 1998-01-26 シャープ株式会社 Semiconductor laser device
US5048035A (en) * 1989-05-31 1991-09-10 Kabushiki Kaisha Toshiba Semiconductor light emitting device
US5164798A (en) * 1991-07-05 1992-11-17 Hewlett-Packard Company Diffusion control of P-N junction location in multilayer heterostructure light emitting devices
US5428634A (en) 1992-11-05 1995-06-27 The United States Of America As Represented By The United States Department Of Energy Visible light emitting vertical cavity surface emitting lasers
US5481122A (en) * 1994-07-25 1996-01-02 Industrial Technology Research Institute Surface light emitting diode with electrically conductive window layer
JP2871477B2 (en) * 1994-09-22 1999-03-17 信越半導体株式会社 Semiconductor light emitting device and method of manufacturing the same
JPH08242037A (en) 1995-03-03 1996-09-17 Nec Corp Planar semiconductor light emitting element
US5568499A (en) 1995-04-07 1996-10-22 Sandia Corporation Optical device with low electrical and thermal resistance bragg reflectors
US5565694A (en) 1995-07-10 1996-10-15 Huang; Kuo-Hsin Light emitting diode with current blocking layer
US5706306A (en) 1996-03-15 1998-01-06 Motorola VCSEL with distributed Bragg reflectors for visible light
JP3216700B2 (en) * 1996-05-22 2001-10-09 サンケン電気株式会社 Semiconductor light emitting device
US6057562A (en) * 1997-04-18 2000-05-02 Epistar Corp. High efficiency light emitting diode with distributed Bragg reflector

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0373933A2 (en) * 1988-12-14 1990-06-20 Kabushiki Kaisha Toshiba Manufacturing method of semiconductor laser with non-absorbing mirror structure
US5466950A (en) * 1993-09-24 1995-11-14 Kabushiki Kaisha Toshiba Semiconductor light emitting device with short wavelength light selecting means

Also Published As

Publication number Publication date
GB2344457A (en) 2000-06-07
US6396862B1 (en) 2002-05-28
GB9826514D0 (en) 1999-01-27
JP2000174331A (en) 2000-06-23

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20131202