GB831815A - Improvements in semi-conductive devices - Google Patents
Improvements in semi-conductive devicesInfo
- Publication number
- GB831815A GB831815A GB6434/57A GB643457A GB831815A GB 831815 A GB831815 A GB 831815A GB 6434/57 A GB6434/57 A GB 6434/57A GB 643457 A GB643457 A GB 643457A GB 831815 A GB831815 A GB 831815A
- Authority
- GB
- United Kingdom
- Prior art keywords
- nitrogen dioxide
- envelope
- dinitrogen tetroxide
- semi
- feb
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10W76/40—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H10P95/00—
-
- H10W72/00—
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/909—Controlled atmosphere
Landscapes
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
- Weting (AREA)
Abstract
831,815. Semi-conductor devices. PHILIPS ELECTRICAL INDUSTRIES Ltd. Feb. 26, 1957 [Feb. 29, 1956], No. 6434/57. Class 37. A method of making a device comprising a semi-conductor body with at least one rectifying electrode and an ohmic electrode includes the steps of etching the body and electrode assembly and then introducing it into an atmosphere containing nitrogen dioxide and dinitrogen tetroxide and preferably also water vapour. In one embodiment an alloy junction transistor, the main body of which is of P-type silicon, is etched and then mounted in a glass envelope contairing nitrogen dioxide and dinitrogen tetroxide into which water vapour is later introduced. The envelope is then partially evacuated, heated to 190 C. and cooled. In a further embodiment an N-type germanium alloy transistor is mounted after etching in an envelope containing dry nitrogen dioxide and dinitrogen tetroxide. After introduction of addition of moist nitrogen dioxide and dinitrogen tetroxide the envelope is sealed, heated to 65 C. and finally cooled.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL205006 | 1956-02-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB831815A true GB831815A (en) | 1960-03-30 |
Family
ID=19750747
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB6434/57A Expired GB831815A (en) | 1956-02-29 | 1957-02-26 | Improvements in semi-conductive devices |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US2887630A (en) |
| BE (1) | BE555370A (en) |
| CH (1) | CH351341A (en) |
| DE (1) | DE1051984B (en) |
| FR (1) | FR1167317A (en) |
| GB (1) | GB831815A (en) |
| NL (2) | NL205006A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3145328A (en) * | 1957-04-29 | 1964-08-18 | Raytheon Co | Methods of preventing channel formation on semiconductive bodies |
| US3244947A (en) * | 1962-06-15 | 1966-04-05 | Slater Electric Inc | Semi-conductor diode and manufacture thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2812480A (en) * | 1954-06-23 | 1957-11-05 | Rca Corp | Method of treating semi-conductor devices and devices produced thereby |
-
0
- NL NL94711D patent/NL94711C/xx active
- BE BE555370D patent/BE555370A/xx unknown
- NL NL205006D patent/NL205006A/xx unknown
-
1957
- 1957-02-14 US US640212A patent/US2887630A/en not_active Expired - Lifetime
- 1957-02-23 DE DEN13347A patent/DE1051984B/en active Pending
- 1957-02-26 GB GB6434/57A patent/GB831815A/en not_active Expired
- 1957-02-26 CH CH351341D patent/CH351341A/en unknown
- 1957-02-28 FR FR1167317D patent/FR1167317A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| NL94711C (en) | |
| BE555370A (en) | |
| DE1051984B (en) | 1959-03-05 |
| NL205006A (en) | |
| FR1167317A (en) | 1958-11-24 |
| CH351341A (en) | 1961-01-15 |
| US2887630A (en) | 1959-05-19 |
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