GB831816A - Improvements in semi-conductive devices - Google Patents
Improvements in semi-conductive devicesInfo
- Publication number
- GB831816A GB831816A GB6435/57A GB643557A GB831816A GB 831816 A GB831816 A GB 831816A GB 6435/57 A GB6435/57 A GB 6435/57A GB 643557 A GB643557 A GB 643557A GB 831816 A GB831816 A GB 831816A
- Authority
- GB
- United Kingdom
- Prior art keywords
- envelope
- semi
- feb
- moist
- junction transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10W76/40—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H10P95/00—
-
- H10W72/00—
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/909—Controlled atmosphere
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
831,816. Semi-conductor devices. PHILIPS ELECTRICAL INDUSTRIES Ltd. Feb. 26, 1957 [Feb. 29, 1956], No. 6435/57. Class 37. A method of making a device comprising a semi-conductor body with at least one rectifying electrode and an ohmic electrode includes the steps of etching the body and electrode assembly and then introducing it into an atmosphere comprising at least one halogen (excluding fluorine) or a hydrogen halide, and preferably water vapour. In one embodiment an alloy junction transistor, the main body of which is P-type silicon, is etched and then introduced into a glass envelope containing dry hydrogen chloride. The envelope is then sealed, heated to 180 C. and finally cooled. Alternatively moist hydrogen fluoride or moist bromine vapour may be used. In an embodiment comprising an alloy junction transistor the base of which is N-type germanium dry hydrogen chloride is introduced into the envelope, followed by water vapour. In all cases, before finally sealing the envelope, the gas pressure may be reduced to 10<SP>-2</SP> mm. of mercury by pumping.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL350722X | 1956-02-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB831816A true GB831816A (en) | 1960-03-30 |
Family
ID=19785028
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB6435/57A Expired GB831816A (en) | 1956-02-29 | 1957-02-26 | Improvements in semi-conductive devices |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US2887629A (en) |
| BE (1) | BE555371A (en) |
| CH (1) | CH350722A (en) |
| DE (1) | DE1052573B (en) |
| FR (1) | FR1167318A (en) |
| GB (1) | GB831816A (en) |
| NL (1) | NL95308C (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE566430A (en) * | 1957-04-05 | |||
| US3281915A (en) * | 1963-04-02 | 1966-11-01 | Rca Corp | Method of fabricating a semiconductor device |
| DE1260445B (en) * | 1965-03-08 | 1968-02-08 | Siemens Ag | Process for diffusing gaseous doping material into a semiconductor crystal |
| GB1134998A (en) * | 1967-04-04 | 1968-11-27 | Marconi Co Ltd | Improvements in or relating to insulated gate field effect transistors |
| US3556880A (en) * | 1968-04-11 | 1971-01-19 | Rca Corp | Method of treating semiconductor devices to improve lifetime |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2812480A (en) * | 1954-06-23 | 1957-11-05 | Rca Corp | Method of treating semi-conductor devices and devices produced thereby |
-
1956
- 1956-02-29 NL NL205007A patent/NL95308C/xx active
-
1957
- 1957-02-13 US US639951A patent/US2887629A/en not_active Expired - Lifetime
- 1957-02-26 DE DEN13359A patent/DE1052573B/en active Pending
- 1957-02-26 CH CH350722D patent/CH350722A/en unknown
- 1957-02-26 GB GB6435/57A patent/GB831816A/en not_active Expired
- 1957-02-27 BE BE555371A patent/BE555371A/xx unknown
- 1957-02-28 FR FR1167318D patent/FR1167318A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| BE555371A (en) | 1957-08-27 |
| NL205007A (en) | 1959-12-15 |
| FR1167318A (en) | 1958-11-24 |
| DE1052573B (en) | 1959-03-12 |
| CH350722A (en) | 1960-12-15 |
| US2887629A (en) | 1959-05-19 |
| NL95308C (en) | 1960-09-15 |
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