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GB1286024A - Method of producing single semiconductor crystals - Google Patents

Method of producing single semiconductor crystals

Info

Publication number
GB1286024A
GB1286024A GB03903/70A GB1390370A GB1286024A GB 1286024 A GB1286024 A GB 1286024A GB 03903/70 A GB03903/70 A GB 03903/70A GB 1390370 A GB1390370 A GB 1390370A GB 1286024 A GB1286024 A GB 1286024A
Authority
GB
United Kingdom
Prior art keywords
crystal
single semiconductor
semiconductor material
producing single
semiconductor crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB03903/70A
Inventor
Donald Richard Causey
John Russell Lenzing
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of GB1286024A publication Critical patent/GB1286024A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/041—Doping control in crystal growth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/909—Controlled atmosphere
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/925—Fluid growth doping control, e.g. delta doping

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

1286024 Crystal-pulling MOTOROLA Inc 23 March 1970 [2 April 1969] 13903/70 Heading BIS In the production of a doped semiconductor crystal of e.g. silicon or germanium by the Czochralski process the semiconductor material is melted in an atmosphere of inert gas (e.g. argon or helium) the pressure of which is subsequently reduced at a programmed rate during the crystal pulling process in order to maintain the dopant concentration in the melt (and thus the crystal) substantially constant over the major part of the crystal, the dopant having a vapour pressure above that of the semiconductor material.
GB03903/70A 1969-04-02 1970-03-23 Method of producing single semiconductor crystals Expired GB1286024A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US81289769A 1969-04-02 1969-04-02

Publications (1)

Publication Number Publication Date
GB1286024A true GB1286024A (en) 1972-08-16

Family

ID=25210907

Family Applications (1)

Application Number Title Priority Date Filing Date
GB03903/70A Expired GB1286024A (en) 1969-04-02 1970-03-23 Method of producing single semiconductor crystals

Country Status (5)

Country Link
US (1) US3615261A (en)
BE (1) BE748239A (en)
DE (1) DE2015561A1 (en)
FR (1) FR2038156B1 (en)
GB (1) GB1286024A (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4125425A (en) * 1974-03-01 1978-11-14 U.S. Philips Corporation Method of manufacturing flat tapes of crystalline silicon from a silicon melt by drawing a seed crystal of silicon from the melt flowing down the faces of a knife shaped heated element
US4134785A (en) * 1977-04-13 1979-01-16 Western Electric Company, Inc. Real-time analysis and control of melt-chemistry in crystal growing operations
US4911896A (en) * 1986-07-24 1990-03-27 General Electric Company Fused quartz member for use in semiconductor manufacture
AU602113B2 (en) * 1987-09-08 1990-09-27 Ebara Solar, Inc. Purification process for dendritic web silicon crystal growth system and dendritic web silicon crystals made thereby
EP0494699A3 (en) * 1987-11-27 1995-03-29 Ethyl Corp High purity doping alloys
JPH0777994B2 (en) * 1989-11-16 1995-08-23 信越半導体株式会社 Method and apparatus for controlling oxygen concentration of single crystal
JPH0777995B2 (en) * 1989-11-16 1995-08-23 信越半導体株式会社 Single crystal resistivity control method
US5904768A (en) * 1996-10-15 1999-05-18 Memc Electronic Materials, Inc. Process for controlling the oxygen content in silicon wafers heavily doped with antimony or arsenic
US6491752B1 (en) * 1999-07-16 2002-12-10 Sumco Oregon Corporation Enhanced n-type silicon material for epitaxial wafer substrate and method of making same
US6344083B1 (en) 2000-02-14 2002-02-05 Memc Electronic Materials, Inc. Process for producing a silicon melt
US6749683B2 (en) 2000-02-14 2004-06-15 Memc Electronic Materials, Inc. Process for producing a silicon melt
US7132091B2 (en) 2001-09-28 2006-11-07 Memc Electronic Materials, Inc. Single crystal silicon ingot having a high arsenic concentration
US20070056504A1 (en) * 2005-09-12 2007-03-15 Rexor Corporation Method and apparatus to produce single crystal ingot of uniform axial resistivity
US20090120353A1 (en) * 2007-11-13 2009-05-14 Memc Electronic Materials, Inc. Reduction of air pockets in silicon crystals by avoiding the introduction of nearly-insoluble gases into the melt
US7922817B2 (en) 2008-04-24 2011-04-12 Memc Electronic Materials, Inc. Method and device for feeding arsenic dopant into a silicon crystal growing apparatus
DE102009044249B3 (en) 2009-10-14 2011-06-30 ReiCat GmbH, 63571 Process and apparatus for separating argon from a gas mixture
DE102011050247B4 (en) 2011-05-10 2019-02-21 Reicat Gmbh Process and apparatus for separating argon from a gas mixture
NO335110B1 (en) * 2011-10-06 2014-09-15 Elkem Solar As Process for the preparation of silicon monocrystals and multicrystalline silicon ingots

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1544292C3 (en) * 1966-06-13 1976-01-08 Siemens Ag, 1000 Berlin Und 8000 Muenchen Process for the production of rod-shaped silicon monocrystals with antimony doping homogeneous over the entire rod length

Also Published As

Publication number Publication date
FR2038156B1 (en) 1976-02-06
DE2015561A1 (en) 1971-02-25
US3615261A (en) 1971-10-26
BE748239A (en) 1970-09-30
FR2038156A1 (en) 1971-01-08

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees