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DE69221354D1 - Halbleiterrelais - Google Patents

Halbleiterrelais

Info

Publication number
DE69221354D1
DE69221354D1 DE69221354T DE69221354T DE69221354D1 DE 69221354 D1 DE69221354 D1 DE 69221354D1 DE 69221354 T DE69221354 T DE 69221354T DE 69221354 T DE69221354 T DE 69221354T DE 69221354 D1 DE69221354 D1 DE 69221354D1
Authority
DE
Germany
Prior art keywords
solid state
state relay
relay
solid
state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69221354T
Other languages
English (en)
Other versions
DE69221354T2 (de
Inventor
Mark Curtis Morgan
Craig Brian Ziemer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Publication of DE69221354D1 publication Critical patent/DE69221354D1/de
Application granted granted Critical
Publication of DE69221354T2 publication Critical patent/DE69221354T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H03K17/163—Soft switching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
    • H03K17/691—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/785—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
DE69221354T 1991-03-26 1992-03-18 Halbleiterrelais Expired - Fee Related DE69221354T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/678,573 US5138177A (en) 1991-03-26 1991-03-26 Solid-state relay

Publications (2)

Publication Number Publication Date
DE69221354D1 true DE69221354D1 (de) 1997-09-11
DE69221354T2 DE69221354T2 (de) 1997-11-20

Family

ID=24723364

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69221354T Expired - Fee Related DE69221354T2 (de) 1991-03-26 1992-03-18 Halbleiterrelais

Country Status (4)

Country Link
US (1) US5138177A (de)
EP (1) EP0506288B1 (de)
JP (1) JP2948979B2 (de)
DE (1) DE69221354T2 (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5278422A (en) * 1991-09-02 1994-01-11 Matsushita Electric Works, Ltd. Normally open solid state relay with minimized response time of relay action upon being turned off
JP2740426B2 (ja) * 1991-09-02 1998-04-15 松下電工株式会社 半導体リレー
DE4214920A1 (de) * 1992-05-11 1993-11-18 Thomson Brandt Gmbh Verfahren und Vorrichtung zur Sensorsignal-Aufbereitung
US5221847A (en) * 1992-06-26 1993-06-22 At&T Bell Laboratories Break-before-make control for form C solid-state relays with current limiter bypass
JPH06177418A (ja) * 1992-12-04 1994-06-24 Toshiba Corp ホトカプラ装置
US5298817A (en) * 1993-02-09 1994-03-29 At&T Bell Laboratories High-frequency solid-state relay
JP3068985B2 (ja) * 1993-07-29 2000-07-24 株式会社東芝 半導体リレー
US5360979A (en) * 1993-08-05 1994-11-01 At&T Bell Laboratories Fast turn-off circuit for solid-state relays or the like
SG67518A1 (en) * 1997-06-30 1999-09-21 Matsushita Electric Works Ltd Solid-state relay
DE19915836C2 (de) * 1999-04-08 2002-03-07 Dold & Soehne Kg E Modulares Gehäusesystem für den Einbau von Steuerungs- und Leistungselektronik
JP2000349328A (ja) * 1999-06-07 2000-12-15 Oki Electric Ind Co Ltd 光結合型半導体スイッチ回路
US6894349B2 (en) * 2001-06-08 2005-05-17 Intersil Americas Inc. Lateral DMOS structure with lateral extension structure for reduced charge trapping in gate oxide
US6765247B2 (en) * 2001-10-12 2004-07-20 Intersil Americas, Inc. Integrated circuit with a MOS structure having reduced parasitic bipolar transistor action
US7342447B2 (en) * 2005-05-09 2008-03-11 Texas Instruments Incorporated Systems and methods for driving an output transistor
US7335871B2 (en) * 2005-10-18 2008-02-26 Honeywell International Inc. Low power switching for antenna reconfiguration
DE102007021491A1 (de) * 2007-05-08 2008-11-13 Robert Bosch Gmbh Motoranordnung mit elektronischem Trennrelais-Modul
JP4802227B2 (ja) * 2008-08-14 2011-10-26 富士通コンポーネント株式会社 リレー装置
JP4856135B2 (ja) * 2008-08-14 2012-01-18 富士通コンポーネント株式会社 リレー装置
US9583413B2 (en) * 2009-02-13 2017-02-28 Infineon Technologies Ag Semiconductor device
US8619395B2 (en) 2010-03-12 2013-12-31 Arc Suppression Technologies, Llc Two terminal arc suppressor
JP5861081B2 (ja) 2010-06-03 2016-02-16 パナソニックＩｐマネジメント株式会社 半導体装置およびこれを用いた半導体リレー
WO2012169401A1 (ja) * 2011-06-06 2012-12-13 オプテックス株式会社 直流絶縁型の半導体リレー装置
JP5563050B2 (ja) * 2012-12-10 2014-07-30 株式会社東芝 ゲート駆動回路、およびパワー半導体モジュール
KR101730198B1 (ko) * 2012-12-26 2017-04-25 삼성전기주식회사 Ｓｐｄｔ 스위치 회로
JP5781108B2 (ja) * 2013-02-28 2015-09-16 株式会社東芝 光結合装置
DE102015109167B3 (de) * 2015-06-10 2016-08-11 Weetech Gmbh Bidirektionaler MOSFET-Schalter und Multiplexer
US10338613B2 (en) * 2016-03-02 2019-07-02 Triune Systems, L.L.C. Circuits and methods for providing power and data communication in isolated system architectures
CN110798191A (zh) * 2019-10-30 2020-02-14 宋晓东 一种常闭直流固态继电器
US10879878B1 (en) 2019-12-16 2020-12-29 Altec Industries, Inc. Drop-in solid-state relay
CN115299786B (zh) * 2021-05-07 2025-04-08 深圳市和生创新技术有限公司 用于空气炸锅的控制方法和无级速控方法及其系统和设备

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1264513C2 (de) * 1963-11-29 1973-01-25 Texas Instruments Inc Bezugspotentialfreier gleichstromdifferenzverstaerker
US3524986A (en) * 1967-02-06 1970-08-18 Gen Electric Semiconductor light gating of light activated semiconductor power control circuits
JPS5929006B2 (ja) * 1974-07-19 1984-07-17 株式会社日立製作所 感光半導体スイツチ
US4227098A (en) * 1979-02-21 1980-10-07 General Electric Company Solid state relay
US4268843A (en) * 1979-02-21 1981-05-19 General Electric Company Solid state relay
US4303831A (en) * 1979-07-30 1981-12-01 Bell Telephone Laboratories, Incorporated Optically triggered linear bilateral switch
US4390790A (en) * 1979-08-09 1983-06-28 Theta-J Corporation Solid state optically coupled electrical power switch
US4408131A (en) * 1981-09-21 1983-10-04 Westinghouse Electric Corp. Optically isolated solid state relay
JPS58136137A (ja) * 1982-02-08 1983-08-13 Hitachi Ltd 電界効果トランジスタを用いたインバータ回路
US4777387A (en) * 1984-02-21 1988-10-11 International Rectifier Corporation Fast turn-off circuit for photovoltaic driven MOSFET
JPS62100017A (ja) * 1985-10-25 1987-05-09 Matsushita Electric Works Ltd 半導体装置
JP2522249B2 (ja) * 1986-06-21 1996-08-07 日本電気株式会社 ソリッドステ−トリレ−
JPS63153916A (ja) * 1986-08-11 1988-06-27 Matsushita Electric Works Ltd 半導体スイツチ回路
JPS63236411A (ja) * 1987-03-25 1988-10-03 Matsushita Electric Works Ltd 固体リレ−
US4859875A (en) * 1987-08-28 1989-08-22 Siemens Aktiengesellschaft Optocoupler for power FET
US4931656A (en) * 1988-03-07 1990-06-05 Dionics Inc. Means to dynamically discharge a capacitively charged electrical device
US4912335A (en) * 1988-03-07 1990-03-27 Dionics Inc. Means for rapid charging and dynamic discharging of a capacitively charged electrical device
JPH02253718A (ja) * 1989-03-28 1990-10-12 Matsushita Electric Works Ltd 固体リレー
US4902901A (en) * 1989-04-14 1990-02-20 Hewlett-Packard Company High-power solid state relay employing photosensitive current augmenting means for faster turn-on time
JP2555887B2 (ja) * 1989-06-19 1996-11-20 日本電気株式会社 トランスファー型ソリッドステートリレー

Also Published As

Publication number Publication date
DE69221354T2 (de) 1997-11-20
EP0506288A3 (en) 1993-02-10
US5138177A (en) 1992-08-11
JPH05114847A (ja) 1993-05-07
JP2948979B2 (ja) 1999-09-13
EP0506288B1 (de) 1997-08-06
EP0506288A2 (de) 1992-09-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee