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DE68929504D1 - Halbleiteranordnung - Google Patents

Halbleiteranordnung

Info

Publication number
DE68929504D1
DE68929504D1 DE68929504T DE68929504T DE68929504D1 DE 68929504 D1 DE68929504 D1 DE 68929504D1 DE 68929504 T DE68929504 T DE 68929504T DE 68929504 T DE68929504 T DE 68929504T DE 68929504 D1 DE68929504 D1 DE 68929504D1
Authority
DE
Germany
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE68929504T
Other languages
English (en)
Other versions
DE68929504T2 (de
Inventor
Akio Nakagawa
Kazuyoshi Furukawa
Tsuneo Ogura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=26364616&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE68929504(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE68929504D1 publication Critical patent/DE68929504D1/de
Application granted granted Critical
Publication of DE68929504T2 publication Critical patent/DE68929504T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/421—Insulated-gate bipolar transistors [IGBT] on insulating layers or insulating substrates, e.g. thin-film IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H10P90/1906—
    • H10W10/019—
    • H10W10/031—
    • H10W10/041—
    • H10W10/061—
    • H10W10/10—
    • H10W10/181—
    • H10W10/30—
    • H10W10/40—
    • H10P90/1914—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/012—Bonding, e.g. electrostatic for strain gauges
DE68929504T 1988-02-08 1989-02-06 Halbleiteranordnung Expired - Lifetime DE68929504T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2678788 1988-02-08
JP2678788 1988-02-08
JP24644188 1988-09-30
JP24644188 1988-09-30

Publications (2)

Publication Number Publication Date
DE68929504D1 true DE68929504D1 (de) 2004-01-15
DE68929504T2 DE68929504T2 (de) 2004-09-23

Family

ID=26364616

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68929504T Expired - Lifetime DE68929504T2 (de) 1988-02-08 1989-02-06 Halbleiteranordnung

Country Status (5)

Country Link
US (1) US5072287A (de)
EP (2) EP0328331A3 (de)
JP (1) JP2788269B2 (de)
KR (1) KR920003442B1 (de)
DE (1) DE68929504T2 (de)

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US5213993A (en) * 1989-09-13 1993-05-25 Kabushiki Kaisha Tobisha Method of manufacturing semiconductor substrate dielectric isolating structure
JP2825322B2 (ja) * 1989-09-13 1998-11-18 株式会社東芝 誘電体分離構造を有する半導体基板の製造方法
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DE4006158A1 (de) * 1990-02-27 1991-09-12 Fraunhofer Ges Forschung Verfahren zum erzeugen einer isolierten, einkristallinen siliziuminsel
US5294559A (en) * 1990-07-30 1994-03-15 Texas Instruments Incorporated Method of forming a vertical transistor
JP3111500B2 (ja) * 1991-05-09 2000-11-20 富士電機株式会社 誘電体分離ウエハの製造方法
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WO1993003498A1 (de) * 1991-08-08 1993-02-18 Siemens Aktiengesellschaft Integrierte schaltungsanordnung mit mindestens einem isolierten bauelement
DE69232348T2 (de) * 1991-09-24 2002-08-14 Matsushita Electric Industrial Co., Ltd. Integrierte Halbleiterschaltungsanordnung und Verfahren zu ihrer Herstellung
DE69231803T2 (de) * 1991-10-14 2001-12-06 Denso Corp., Kariya Verfahren zur Herstellung einer Halbleiteranordnung
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EP0631305B1 (de) * 1993-06-23 1998-04-15 Siemens Aktiengesellschaft Verfahren zur Herstellung eines Isolationsgrabens in einem Substrat für Smart-Power-Technologien
US5892264A (en) * 1993-10-04 1999-04-06 Harris Corporation High frequency analog transistors, method of fabrication and circuit implementation
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JP3344598B2 (ja) * 1993-11-25 2002-11-11 株式会社デンソー 半導体不揮発メモリ装置
JP3255547B2 (ja) * 1994-03-09 2002-02-12 株式会社東芝 絶縁ゲート付きサイリスタ
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US5889310A (en) * 1997-04-21 1999-03-30 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with high breakdown voltage island region
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DE69838422D1 (de) * 1998-10-23 2007-10-25 St Microelectronics Srl Auf einem Halbleitersubstrat integrierte Hochspannungs-Widerstandsstruktur
JP4206543B2 (ja) 1999-02-02 2009-01-14 株式会社デンソー 半導体装置
EP1028468A1 (de) * 1999-02-09 2000-08-16 STMicroelectronics S.r.l. Vorspannungsschaltung für Isolationsbereich in integriertem Leistungsschaltkreis
EP1065734B1 (de) * 1999-06-09 2009-05-13 Kabushiki Kaisha Toshiba Bond-typ Halbleitersubstrat, lichtemittierendes Halbleiterbauelement und Herstellungsverfahren
US6879023B1 (en) * 2000-03-22 2005-04-12 Broadcom Corporation Seal ring for integrated circuits
US6376870B1 (en) * 2000-09-08 2002-04-23 Texas Instruments Incorporated Low voltage transistors with increased breakdown voltage to substrate
US6768183B2 (en) * 2001-04-20 2004-07-27 Denso Corporation Semiconductor device having bipolar transistors
US6670255B2 (en) * 2001-09-27 2003-12-30 International Business Machines Corporation Method of fabricating lateral diodes and bipolar transistors
JP2003264244A (ja) * 2002-03-08 2003-09-19 Seiko Epson Corp 半導体装置およびその製造方法
EP1576669A1 (de) * 2002-12-10 2005-09-21 Power Electronics Design Centre Integrierte leistungsschaltkreise
DE10300577B4 (de) 2003-01-10 2012-01-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Halbleiterbauelement mit vertikalem Leistungsbauelement aufweisend einen Trenngraben und Verfahren zu dessen Herstellung
DE102004028474B4 (de) * 2004-06-11 2009-04-09 X-Fab Semiconductor Foundries Ag Integriertes Bauelement in einer SOI-Scheibe
KR100582374B1 (ko) * 2004-09-08 2006-05-22 매그나칩 반도체 유한회사 고전압 트랜지스터 및 그 제조 방법
DE102004053077B4 (de) * 2004-11-03 2006-11-02 X-Fab Semiconductor Foundries Ag Vertikale PIN-Fotodiode und Verfahren zur Herstellung, kompatibel zu einem konventionellen CMOS-Prozess
US7525151B2 (en) * 2006-01-05 2009-04-28 International Rectifier Corporation Vertical DMOS device in integrated circuit
US20070228505A1 (en) * 2006-04-04 2007-10-04 Mazzola Michael S Junction barrier schottky rectifiers having epitaxially grown p+-n junctions and methods of making
JP4793078B2 (ja) * 2006-04-25 2011-10-12 株式会社デンソー 半導体装置
JP5036234B2 (ja) 2006-07-07 2012-09-26 三菱電機株式会社 半導体装置
US20080128762A1 (en) * 2006-10-31 2008-06-05 Vora Madhukar B Junction isolated poly-silicon gate JFET
US7700405B2 (en) * 2007-02-28 2010-04-20 Freescale Semiconductor, Inc. Microelectronic assembly with improved isolation voltage performance and a method for forming the same
US8168466B2 (en) * 2007-06-01 2012-05-01 Semiconductor Components Industries, Llc Schottky diode and method therefor
JP5479671B2 (ja) * 2007-09-10 2014-04-23 ローム株式会社 半導体装置
DE102008028452B4 (de) 2008-06-14 2012-10-25 X-Fab Semiconductor Foundries Ag Leistungstransistor für hohe Spannungen in SOI-Technologie
DE102008049732B4 (de) * 2008-09-30 2011-06-09 Amd Fab 36 Limited Liability Company & Co. Kg Halbleiterbauelement mit vergrabenem Polysiliziumwiderstand sowie Verfahren zu seiner Herstellung
JP5446388B2 (ja) * 2009-03-31 2014-03-19 サンケン電気株式会社 集積化半導体装置の製造方法
KR101148335B1 (ko) * 2009-07-23 2012-05-21 삼성전기주식회사 실리콘 반도체를 이용한 광전자 증배관 및 그 구조 셀
KR101084940B1 (ko) * 2009-09-28 2011-11-17 삼성전기주식회사 실리콘 광전자 증배관
JP5434961B2 (ja) 2010-08-04 2014-03-05 株式会社デンソー 横型ダイオードを有する半導体装置
US8476684B2 (en) * 2010-09-29 2013-07-02 Analog Devices, Inc. Field effect transistors having improved breakdown voltages and methods of forming the same
JP5711646B2 (ja) * 2010-11-16 2015-05-07 株式会社豊田中央研究所 ダイオード
CN104282552A (zh) * 2013-07-03 2015-01-14 无锡华润上华半导体有限公司 一种igbt的制造方法
JP6155911B2 (ja) 2013-07-04 2017-07-05 三菱電機株式会社 半導体装置

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Also Published As

Publication number Publication date
KR920003442B1 (ko) 1992-05-01
US5072287A (en) 1991-12-10
EP0328331A3 (de) 1991-03-20
KR890013770A (ko) 1989-09-26
EP0721211A2 (de) 1996-07-10
JP2788269B2 (ja) 1998-08-20
DE68929504T2 (de) 2004-09-23
EP0721211A3 (de) 1996-12-27
EP0328331A2 (de) 1989-08-16
EP0721211B1 (de) 2003-12-03
JPH02168646A (ja) 1990-06-28

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