KR900008615A - 반도체장치 - Google Patents

반도체장치

Info

Publication number: KR900008615A
Authority: KR; South Korea
Prior art keywords: semiconductor device; semiconductor
Prior art date: 1988-11-10
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

KR1019890016289A

Other languages

English (en)

Other versions

KR930002511B1 (ko

Inventor

다카히로 이토

분시로 야마키

요시오 야마모토

Original Assignee

가부시키가이샤 도시바

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1988-11-10

Filing date

1989-11-10

Publication date

1990-06-03

1989-11-10 Application filed by 가부시키가이샤 도시바 filed Critical 가부시키가이샤 도시바

1990-06-03 Publication of KR900008615A publication Critical patent/KR900008615A/ko

1993-04-03 Application granted granted Critical

1993-04-03 Publication of KR930002511B1 publication Critical patent/KR930002511B1/ko

2009-11-10 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs

KR1019890016289A 1988-11-10 1989-11-10 반도체장치 Expired - Fee Related KR930002511B1 (ko)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP88-284772		1988-11-10
JP63284772A JPH07112024B2 (ja)	1988-11-10	1988-11-10	半導体装置

Publications (2)

Publication Number	Publication Date
KR900008615A true KR900008615A (ko)	1990-06-03
KR930002511B1 KR930002511B1 (ko)	1993-04-03

Family

ID=17682816

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
KR1019890016289A Expired - Fee Related KR930002511B1 (ko)	1988-11-10	1989-11-10	반도체장치

Country Status (3)

Country	Link
US (1)	US5021859A (ko)
JP (1)	JPH07112024B2 (ko)
KR (1)	KR930002511B1 (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR930008018B1 (ko) *	1991-06-27	1993-08-25	삼성전자 주식회사	바이씨모스장치 및 그 제조방법
US5268316A (en) *	1991-12-06	1993-12-07	National Semiconductor Corporation	Fabrication process for Schottky diode with localized diode well
US5405790A (en) *	1993-11-23	1995-04-11	Motorola, Inc.	Method of forming a semiconductor structure having MOS, bipolar, and varactor devices
US5578860A (en) *	1995-05-01	1996-11-26	Motorola, Inc.	Monolithic high frequency integrated circuit structure having a grounded source configuration
DE19821726C1 (de) *	1998-05-14	1999-09-09	Texas Instruments Deutschland	Ingegrierte CMOS-Schaltung für die Verwendung bei hohen Frequenzen
US7449389B2 (en) *	2006-10-27	2008-11-11	Infineon Technologies Ag	Method for fabricating a semiconductor structure
US9171838B2 (en)	2012-08-14	2015-10-27	Sony Corporation	Integrated semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE3018848A1 (de) *	1980-05-16	1981-11-26	SIEMENS AG AAAAA, 1000 Berlin und 8000 München	Verfahren zur herstellung monolithisch intetgrierter mos- und bipolar-halbleiteranordnungen fuer den vhf- und den uhf-bereich
JPS61154063A (ja) *	1984-12-26	1986-07-12	Toshiba Corp	光半導体装置およびその製造方法
JPS62122307A (ja) *	1985-08-28	1987-06-03	Toshiba Corp	利得制御増幅回路

1988
- 1988-11-10 JP JP63284772A patent/JPH07112024B2/ja not_active Expired - Fee Related
1989
- 1989-11-09 US US07/436,056 patent/US5021859A/en not_active Expired - Lifetime
- 1989-11-10 KR KR1019890016289A patent/KR930002511B1/ko not_active Expired - Fee Related

Also Published As

Publication number	Publication date
JPH02130868A (ja)	1990-05-18
JPH07112024B2 (ja)	1995-11-29
US5021859A (en)	1991-06-04
KR930002511B1 (ko)	1993-04-03

Publication	Publication Date	Title
KR900011017A (ko)	1990-07-11	반도체장치
DE68926256D1 (de)	1996-05-23	Komplementäre Halbleiteranordnung
KR900007100A (ko)	1990-05-09	반도체장치
DE68925374D1 (de)	1996-02-22	Halbleiterherstellungsvorrichtung
DE68926811D1 (de)	1996-08-14	Halbleiterspeicheranordnung
DE68927295D1 (de)	1996-11-07	Kunstharzversiegeltes halbleiterbauelement
DE68929504D1 (de)	2004-01-15	Halbleiteranordnung
DE68917848D1 (de)	1994-10-06	Halbleiteranordnung.
DE68921421D1 (de)	1995-04-06	Halbleitervorrichtung.
KR900008703A (ko)	1990-06-03	반도체 장치
DE68926124D1 (de)	1996-05-02	Halbleiterspeicheranordnung
DE68928312D1 (de)	1997-10-16	Leistungshalbleitervorrichtung
KR900001037A (ko)	1990-01-30	반도체 장치
DE68928176D1 (de)	1997-08-21	Leistungshalbleitervorrichtung
DE69033794D1 (de)	2001-10-18	Halbleiteranordnung
DE68917971D1 (de)	1994-10-13	Halbleitervorrichtung.
KR880701017A (ko)	1988-04-13	반도체 장치
DE69031609D1 (de)	1997-11-27	Halbleiteranordnung
DE68928760D1 (de)	1998-09-03	Halbleitervorrichtung
KR900702572A (ko)	1990-12-07	반도체 장치
KR900008675A (ko)	1990-06-03	반도체기억장치
KR890015422A (ko)	1989-10-30	반도체 장치
DE69029226D1 (de)	1997-01-09	Halbleiteranordnung
KR890005864A (ko)	1989-05-17	반도체 장치
KR890015471A (ko)	1989-10-30	반도체 장치

Legal Events

Date	Code	Title	Description
1989-11-10	A201	Request for examination
1989-11-10	PA0109	Patent application	St.27 status event code: A-0-1-A10-A12-nap-PA0109
1989-11-10	PA0201	Request for examination	St.27 status event code: A-1-2-D10-D11-exm-PA0201
1989-11-10	R17-X000	Change to representative recorded	St.27 status event code: A-3-3-R10-R17-oth-X000
1990-06-03	PG1501	Laying open of application	St.27 status event code: A-1-1-Q10-Q12-nap-PG1501
1993-03-05	G160	Decision to publish patent application
1993-04-03	PG1605	Publication of application before grant of patent	St.27 status event code: A-2-2-Q10-Q13-nap-PG1605
1993-06-24	E701	Decision to grant or registration of patent right
1993-06-24	PE0701	Decision of registration	St.27 status event code: A-1-2-D10-D22-exm-PE0701
1993-09-07	GRNT	Written decision to grant
1993-09-07	PR0701	Registration of establishment	St.27 status event code: A-2-4-F10-F11-exm-PR0701
1993-09-07	PR1002	Payment of registration fee	St.27 status event code: A-2-2-U10-U11-oth-PR1002 Fee payment year number: 1
1996-04-02	PR1001	Payment of annual fee	St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 4
1997-04-02	PR1001	Payment of annual fee	St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 5
1997-12-29	PR1001	Payment of annual fee	St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 6
1999-01-05	R18-X000	Changes to party contact information recorded	St.27 status event code: A-5-5-R10-R18-oth-X000
1999-01-12	PN2301	Change of applicant	St.27 status event code: A-5-5-R10-R13-asn-PN2301 St.27 status event code: A-5-5-R10-R11-asn-PN2301
1999-03-02	R18-X000	Changes to party contact information recorded	St.27 status event code: A-5-5-R10-R18-oth-X000
1999-03-06	R18-X000	Changes to party contact information recorded	St.27 status event code: A-5-5-R10-R18-oth-X000
1999-03-27	PR1001	Payment of annual fee	St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 7
2000-03-28	PR1001	Payment of annual fee	St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 8
2001-03-29	PR1001	Payment of annual fee	St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 9
2001-07-28	R18-X000	Changes to party contact information recorded	St.27 status event code: A-5-5-R10-R18-oth-X000
2002-03-28	PR1001	Payment of annual fee	St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 10
2003-04-01	PR1001	Payment of annual fee	St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 11
2004-03-31	PR1001	Payment of annual fee	St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 12
2005-03-31	PR1001	Payment of annual fee	St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 13
2006-03-31	FPAY	Annual fee payment	Payment date: 20060331 Year of fee payment: 14
2006-03-31	PR1001	Payment of annual fee	St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 14
2007-04-04	LAPS	Lapse due to unpaid annual fee
2007-04-04	PC1903	Unpaid annual fee	St.27 status event code: A-4-4-U10-U13-oth-PC1903 Not in force date: 20070404 Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE
2008-06-10	PC1903	Unpaid annual fee	St.27 status event code: N-4-6-H10-H13-oth-PC1903 Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE Not in force date: 20070404
2018-06-07	P22-X000	Classification modified	St.27 status event code: A-4-4-P10-P22-nap-X000
2025-01-02	P22-X000	Classification modified	St.27 status event code: A-4-4-P10-P22-nap-X000
2025-09-30	R18-X000	Changes to party contact information recorded	St.27 status event code: A-5-5-R10-R18-oth-X000
2026-01-06	P22-X000	Classification modified	St.27 status event code: A-4-4-P10-P22-nap-X000