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DE60140691D1 - Halbleiterdiodenbauelement - Google Patents

Halbleiterdiodenbauelement

Info

Publication number
DE60140691D1
DE60140691D1 DE60140691T DE60140691T DE60140691D1 DE 60140691 D1 DE60140691 D1 DE 60140691D1 DE 60140691 T DE60140691 T DE 60140691T DE 60140691 T DE60140691 T DE 60140691T DE 60140691 D1 DE60140691 D1 DE 60140691D1
Authority
DE
Germany
Prior art keywords
semiconductor diodes
diodes component
component
semiconductor
diodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60140691T
Other languages
English (en)
Inventor
Neil Thomas Gordon
Anthony Michael White
Charles Tom Elliott
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qinetiq Ltd
Original Assignee
Qinetiq Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qinetiq Ltd filed Critical Qinetiq Ltd
Application granted granted Critical
Publication of DE60140691D1 publication Critical patent/DE60140691D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H10F77/1237—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe having at least three elements, e.g. HgCdTe
DE60140691T 2000-12-12 2001-12-10 Halbleiterdiodenbauelement Expired - Lifetime DE60140691D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0030204.2A GB0030204D0 (en) 2000-12-12 2000-12-12 Reduced noise semiconductor photodetector
PCT/GB2001/005454 WO2002049117A1 (en) 2000-12-12 2001-12-10 Semiconductor diode device

Publications (1)

Publication Number Publication Date
DE60140691D1 true DE60140691D1 (de) 2010-01-14

Family

ID=9904870

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60140691T Expired - Lifetime DE60140691D1 (de) 2000-12-12 2001-12-10 Halbleiterdiodenbauelement

Country Status (7)

Country Link
US (1) US6858876B2 (de)
EP (1) EP1342272B1 (de)
JP (1) JP3925921B2 (de)
AU (1) AU2002222154A1 (de)
DE (1) DE60140691D1 (de)
GB (1) GB0030204D0 (de)
WO (1) WO2002049117A1 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7054271B2 (en) 1996-12-06 2006-05-30 Ipco, Llc Wireless network system and method for providing same
US8982856B2 (en) 1996-12-06 2015-03-17 Ipco, Llc Systems and methods for facilitating wireless network communication, satellite-based wireless network systems, and aircraft-based wireless network systems, and related methods
US6437692B1 (en) * 1998-06-22 2002-08-20 Statsignal Systems, Inc. System and method for monitoring and controlling remote devices
US8410931B2 (en) 1998-06-22 2013-04-02 Sipco, Llc Mobile inventory unit monitoring systems and methods
US6914893B2 (en) 1998-06-22 2005-07-05 Statsignal Ipc, Llc System and method for monitoring and controlling remote devices
US6891838B1 (en) * 1998-06-22 2005-05-10 Statsignal Ipc, Llc System and method for monitoring and controlling residential devices
US7650425B2 (en) 1999-03-18 2010-01-19 Sipco, Llc System and method for controlling communication between a host computer and communication devices associated with remote devices in an automated monitoring system
US8489063B2 (en) 2001-10-24 2013-07-16 Sipco, Llc Systems and methods for providing emergency messages to a mobile device
US7480501B2 (en) 2001-10-24 2009-01-20 Statsignal Ipc, Llc System and method for transmitting an emergency message over an integrated wireless network
US7424527B2 (en) 2001-10-30 2008-09-09 Sipco, Llc System and method for transmitting pollution information over an integrated wireless network
US7756086B2 (en) 2004-03-03 2010-07-13 Sipco, Llc Method for communicating in dual-modes
US8031650B2 (en) 2004-03-03 2011-10-04 Sipco, Llc System and method for monitoring remote devices with a dual-mode wireless communication protocol
US8202479B1 (en) * 2004-11-09 2012-06-19 Applied Biosystems, Llc Light collection system
FR2879818B1 (fr) * 2004-12-17 2007-04-20 Commissariat Energie Atomique Photodetecteur a semi-conducteur, dispositif de detection multi-spectrale d'un rayonnement electromagnetique mettant en oeuvre un tel photodetecteur, et procede de mise en oeuvre d'un tel dispositif
US7368762B2 (en) 2005-01-06 2008-05-06 Teledyne Licensing, Llc Heterojunction photodiode
WO2006081206A1 (en) 2005-01-25 2006-08-03 Sipco, Llc Wireless network protocol systems and methods
US7504672B1 (en) * 2005-09-20 2009-03-17 Drs Sensors & Targeting Systems, Inc. Separate absorption and detection diode
CN103236436B (zh) * 2013-02-28 2016-02-17 溧阳市宏达电机有限公司 一种pin二极管的电极的制造方法
WO2015193875A1 (en) * 2014-06-16 2015-12-23 B. G. Negev Technologies And Applications Ltd., At Ben-Gurion University Swir to visible image up-conversion integrated device
CN104465676B (zh) * 2014-12-09 2017-10-03 厦门大学 4H‑SiC PIN紫外光电二极管一维阵列芯片及其制备方法
JP6880601B2 (ja) * 2016-08-22 2021-06-02 富士通株式会社 光検出器及び撮像装置
JP7027970B2 (ja) * 2018-03-07 2022-03-02 住友電気工業株式会社 半導体受光デバイス、赤外線検知装置
JP7027969B2 (ja) * 2018-03-07 2022-03-02 住友電気工業株式会社 半導体受光素子
JP7428891B2 (ja) * 2020-03-31 2024-02-07 富士通株式会社 光学センサ及び撮像装置
US12490501B2 (en) 2022-02-16 2025-12-02 International Business Machines Corporation Vertically stacked cascode bipolar junction transistor (BJT) pair sensor

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4292512A (en) * 1978-06-19 1981-09-29 Bell Telephone Laboratories, Incorporated Optical monitoring photodiode system
JPS56125877A (en) 1980-03-07 1981-10-02 Semiconductor Res Found Semiconductor device for extra-high frequency and its manufacture
US4390889A (en) 1980-10-09 1983-06-28 Bell Telephone Laboratories, Incorporated Photodiode having an InGaAs layer with an adjacent InGaAsP p-n junction
US4544938A (en) 1982-11-18 1985-10-01 Codenoll Technology Corporation Wavelength-selective photodetector
JPS5994474A (ja) 1982-11-19 1984-05-31 Nec Corp ヘテロ接合光検出器
JPS6074480A (ja) 1983-09-10 1985-04-26 Semiconductor Res Found ３−５半導体装置の製造方法
JPH01183174A (ja) 1988-01-18 1989-07-20 Fujitsu Ltd 半導体受光素子
KR960004594B1 (ko) * 1993-03-17 1996-04-09 엘지전자주식회사 적외선 광 검출기
JP2601231B2 (ja) * 1994-12-22 1997-04-16 日本電気株式会社 超格子アバランシェフォトダイオード
GB9520324D0 (en) 1995-10-05 1995-12-06 Secr Defence Improved auger suppressed device
GB9524414D0 (en) * 1995-11-29 1996-01-31 Secr Defence Low resistance contact semiconductor device

Also Published As

Publication number Publication date
EP1342272B1 (de) 2009-12-02
JP2004516656A (ja) 2004-06-03
AU2002222154A1 (en) 2002-06-24
US20040036093A1 (en) 2004-02-26
JP3925921B2 (ja) 2007-06-06
EP1342272A1 (de) 2003-09-10
GB0030204D0 (en) 2001-01-24
US6858876B2 (en) 2005-02-22
WO2002049117A1 (en) 2002-06-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition