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DE60142141D1 - Halbleiterbauelement - Google Patents

Halbleiterbauelement

Info

Publication number
DE60142141D1
DE60142141D1 DE60142141T DE60142141T DE60142141D1 DE 60142141 D1 DE60142141 D1 DE 60142141D1 DE 60142141 T DE60142141 T DE 60142141T DE 60142141 T DE60142141 T DE 60142141T DE 60142141 D1 DE60142141 D1 DE 60142141D1
Authority
DE
Germany
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60142141T
Other languages
English (en)
Inventor
Toru Kimura
Dai Nakajima
Tatsuya Okuda
Takeshi Ohi
Takanobu Yoshida
Yuuji Kuramoto
Masakazu Fukada
Majumdar Gourab
Naoki Yoshimatsu
Toshinori Yamane
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE60142141D1 publication Critical patent/DE60142141D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
DE60142141T 2000-03-14 2001-03-14 Halbleiterbauelement Expired - Lifetime DE60142141D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000069770A JP3622782B2 (ja) 2000-03-14 2000-03-14 半導体装置

Publications (1)

Publication Number Publication Date
DE60142141D1 true DE60142141D1 (de) 2010-07-01

Family

ID=18588594

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60142141T Expired - Lifetime DE60142141D1 (de) 2000-03-14 2001-03-14 Halbleiterbauelement

Country Status (4)

Country Link
US (1) US6580147B2 (de)
EP (1) EP1134807B1 (de)
JP (1) JP3622782B2 (de)
DE (1) DE60142141D1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3685117B2 (ja) * 2001-10-05 2005-08-17 トヨタ自動車株式会社 インバータ装置
JP4625238B2 (ja) * 2003-02-07 2011-02-02 東芝三菱電機産業システム株式会社 電力変換装置
DE10314172B4 (de) * 2003-03-28 2006-11-30 Infineon Technologies Ag Verfahren zum Betreiben einer Anordnung aus einem elektrischen Bauelement auf einem Substrat und Verfahren zum Herstellen der Anordnung
JP3929428B2 (ja) * 2003-09-29 2007-06-13 三菱電機株式会社 電力制御装置
JP4552513B2 (ja) * 2004-05-26 2010-09-29 トヨタ自動車株式会社 電力制御ユニットおよびこれのユニットケース
JP4346504B2 (ja) * 2004-06-03 2009-10-21 株式会社東芝 パワー半導体モジュールを備えた電力変換装置
JP4566678B2 (ja) 2004-10-04 2010-10-20 日立オートモティブシステムズ株式会社 パワーモジュール
US7795663B2 (en) * 2005-06-21 2010-09-14 E. I. Du Pont De Nemours And Company Acceptor doped barium titanate based thin film capacitors on metal foils and methods of making thereof
JP2007082359A (ja) * 2005-09-16 2007-03-29 Hitachi Ltd インバータ装置および制御装置
JP4807141B2 (ja) * 2006-05-25 2011-11-02 株式会社豊田自動織機 半導体装置
JP4436843B2 (ja) 2007-02-07 2010-03-24 株式会社日立製作所 電力変換装置
JP5169353B2 (ja) * 2008-03-18 2013-03-27 三菱電機株式会社 パワーモジュール
JP5162518B2 (ja) * 2009-04-10 2013-03-13 日立オートモティブシステムズ株式会社 電力変換装置
JP5652346B2 (ja) * 2011-06-30 2015-01-14 株式会社明電舎 パワー半導体モジュール
JP6406815B2 (ja) * 2013-11-29 2018-10-17 株式会社東芝 半導体装置
JP5989057B2 (ja) * 2014-10-27 2016-09-07 日立オートモティブシステムズ株式会社 電力変換装置
CN107112898B (zh) 2014-11-18 2019-06-21 通用电气全球采购有限责任公司 母线和功率电子装置及制造引线端连接器的方法
DE102016102744B4 (de) 2015-11-12 2017-11-16 Infineon Technologies Ag Leistungshalbleiteranordnung mit einer Mehrzahl von Leistungshalbleiter-Schaltelementen und verringerter Induktivitätsasymmetrie und Verwendung derselben
DE112019003699T5 (de) * 2018-07-25 2021-04-08 Denso Corporation Leistungsmodul und elektrische Leistungsumwandlungsvorrichtung
JP7239380B2 (ja) * 2019-04-16 2023-03-14 株式会社日立製作所 電力変換装置
JP2020184854A (ja) * 2019-05-09 2020-11-12 東芝三菱電機産業システム株式会社 電力変換装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2658427B2 (ja) * 1989-01-17 1997-09-30 富士電機株式会社 電力変換用半導体素子のスナバ回路とそのモジュール装置
US5031069A (en) * 1989-12-28 1991-07-09 Sundstrand Corporation Integration of ceramic capacitor
US5142439A (en) * 1991-08-28 1992-08-25 Allied-Signal Inc. Integrated bus bar/multilayer ceramic capacitor module
JP3582545B2 (ja) * 1995-06-23 2004-10-27 株式会社安川電機 ブリッジ形電力変換装置
WO1998004029A1 (en) * 1996-07-22 1998-01-29 Hydro-Quebec Low stray interconnection inductance power converting module for converting a dc voltage into an ac voltage, and a method therefor
JPH1098887A (ja) * 1996-09-20 1998-04-14 Hitachi Ltd 電力変換装置
JPH10285907A (ja) * 1997-04-10 1998-10-23 Toshiba Corp 電力変換装置
JPH10304680A (ja) * 1997-04-25 1998-11-13 Toyota Motor Corp 電力変換装置
DE19717550A1 (de) * 1997-04-25 1998-10-29 Abb Daimler Benz Transp Flaches Stromschienenpaket für ein Stromrichtergerät
JP3447543B2 (ja) * 1998-02-02 2003-09-16 東芝トランスポートエンジニアリング株式会社 電力変換装置
DE19826731C2 (de) * 1998-06-16 2000-10-26 Gruendl & Hoffmann Halbbrückenbaugruppe
JP3484122B2 (ja) * 2000-01-13 2004-01-06 三菱電機株式会社 電力変換装置

Also Published As

Publication number Publication date
JP2001258267A (ja) 2001-09-21
US20010035562A1 (en) 2001-11-01
US6580147B2 (en) 2003-06-17
EP1134807A2 (de) 2001-09-19
JP3622782B2 (ja) 2005-02-23
EP1134807B1 (de) 2010-05-19
EP1134807A3 (de) 2005-03-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition