DE60129991D1 - Halbleiterlaserbauelement - Google Patents

Halbleiterlaserbauelement

Info

Publication number: DE60129991D1
Authority: DE; Germany
Prior art keywords: semiconductor laser; laser element; semiconductor; laser
Prior art date: 2000-07-17
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

DE60129991T

Other languages

English (en)

Other versions

DE60129991T2 (de

Inventor

Shoji Honda

Yasuhiro Watanabe

Yasuyuki Bessho

Kentarou Tanaka

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Tokyo Sanyo Electric Co Ltd

Sanyo Electric Co Ltd

Original Assignee

Tokyo Sanyo Electric Co Ltd

Tottori Sanyo Electric Co Ltd

Sanyo Electric Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2000-07-17

Filing date

2001-06-21

Publication date

2007-09-27

2000-07-17 Priority claimed from JP2000216162A external-priority patent/JP3723424B2/ja

2000-07-19 Priority claimed from JP2000219167A external-priority patent/JP3973348B2/ja

2000-07-26 Priority claimed from JP2000225602A external-priority patent/JP3806586B2/ja

2000-07-26 Priority claimed from JP2000225603A external-priority patent/JP3723425B2/ja

2000-07-28 Priority claimed from JP2000229298A external-priority patent/JP3723426B2/ja

2001-06-21 Application filed by Tokyo Sanyo Electric Co Ltd, Tottori Sanyo Electric Co Ltd, Sanyo Electric Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd

2007-09-27 Application granted granted Critical

2007-09-27 Publication of DE60129991D1 publication Critical patent/DE60129991D1/de

2008-04-30 Publication of DE60129991T2 publication Critical patent/DE60129991T2/de

2021-06-22 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/0231—Stems
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/0232—Lead-frames
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
- H10W90/756—

Landscapes

Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Electromagnetism (AREA)
Optics & Photonics (AREA)
Semiconductor Lasers (AREA)

DE60129991T 2000-07-17 2001-06-21 Halbleiterlaservorrichtung Expired - Lifetime DE60129991T2 (de)

Applications Claiming Priority (11)

Application Number	Priority Date	Filing Date	Title
JP2000216162		2000-07-17
JP2000216162A JP3723424B2 (ja)	2000-07-17	2000-07-17	レーザ装置
JP2000219167		2000-07-19
JP2000219167A JP3973348B2 (ja)	2000-07-19	2000-07-19	レーザ装置及びその製造方法
JP2000225602A JP3806586B2 (ja)	2000-07-26	2000-07-26	半導体レーザ装置
JP2000225602		2000-07-26
JP2000225603		2000-07-26
JP2000225603A JP3723425B2 (ja)	2000-07-26	2000-07-26	半導体レーザ装置
JP2000229298		2000-07-28
JP2000229298A JP3723426B2 (ja)	2000-07-28	2000-07-28	半導体レーザ装置
PCT/JP2001/005340 WO2002007275A1 (en)	2000-07-17	2001-06-21	Semiconductor laser device

Publications (2)

Publication Number	Publication Date
DE60129991D1 true DE60129991D1 (de)	2007-09-27
DE60129991T2 DE60129991T2 (de)	2008-04-30

Family

ID=27531607

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE60129991T Expired - Lifetime DE60129991T2 (de)	2000-07-17	2001-06-21	Halbleiterlaservorrichtung

Country Status (6)

Country	Link
US (1)	US6885076B2 (de)
EP (1)	EP1313184B1 (de)
KR (1)	KR100542336B1 (de)
CN (1)	CN1258252C (de)
DE (1)	DE60129991T2 (de)
WO (1)	WO2002007275A1 (de)

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US8623379B2 (en)	2000-03-02	2014-01-07	Emory University	Compositions and methods for generating an immune response
JP3737769B2 (ja)	2002-03-28	2006-01-25	株式会社東芝	半導体レーザ装置
DE10221857A1 (de)	2002-05-16	2003-11-27	Osram Opto Semiconductors Gmbh	Verfahren zum Befestigen eines Halbleiterchips in einem Kunststoffgehäusekörper, optoelektronisches Halbleiterbauelement und Verfahren zu dessen Herstellung
JP2004063688A (ja) *	2002-07-26	2004-02-26	Mitsubishi Electric Corp	半導体装置及び半導体アセンブリモジュール
US6683370B1 (en) *	2003-04-15	2004-01-27	Motorola, Inc.	Semiconductor component and method of manufacturing same
JP4031748B2 (ja) *	2003-10-06	2008-01-09	ローム株式会社	半導体レーザ
JP4372508B2 (ja) *	2003-10-06	2009-11-25	ローム株式会社	リードフレームの製造方法およびそれを用いた半導体装置の製造方法、ならびに半導体装置ならびにそれを備えた携帯機器および電子装置
US7339194B2 (en) *	2003-10-15	2008-03-04	Sanyo Electric Co., Ltd.	Semiconductor laser device and manufacturing method thereof
JP4053962B2 (ja) *	2003-10-15	2008-02-27	株式会社東芝	半導体装置
JP4033883B2 (ja) *	2003-10-15	2008-01-16	三洋電機株式会社	２ビーム半導体レーザ装置
JP2006024812A (ja) *	2004-07-09	2006-01-26	Sony Corp	半導体素子搭載のリードフレームとそれを用いた半導体装置
US9453239B2 (en)	2004-08-27	2016-09-27	Emory University	Recombinant MVA viruses expressing clade A/G, clade B, and clade C modified HIV env, gag and pol genes
US7211882B2 (en) *	2005-03-22	2007-05-01	Harvatek Corporation	LED package structure and method for making the same
CN100391063C (zh) *	2005-06-06	2008-05-28	东贝光电科技股份有限公司	激光二极管的制法及其结构
EP1980001B1 (de)	2006-02-03	2018-04-04	Ricoh Company, Ltd.	Oberflächenemittierende laservorrichtung
US7693204B2 (en) *	2006-02-03	2010-04-06	Ricoh Company, Ltd.	Surface-emitting laser device and surface-emitting laser array including same
JP4970924B2 (ja) *	2006-03-28	2012-07-11	三菱電機株式会社	光素子用パッケージとこれを用いた光半導体装置
JP5122172B2 (ja) *	2007-03-30	2013-01-16	ローム株式会社	半導体発光装置
JP4310352B2 (ja) *	2007-06-05	2009-08-05	シャープ株式会社	発光デバイスおよび発光デバイスの製造方法
WO2009064771A2 (en)	2007-11-12	2009-05-22	North Carolina State University	Alteration of tobacco alkaloid content through modification of specific cytochrome p450 genes
JP5206399B2 (ja) *	2008-12-25	2013-06-12	三菱電機株式会社	レーザ装置及びその製造方法
US8829685B2 (en) *	2009-03-31	2014-09-09	Semiconductor Components Industries, Llc	Circuit device having funnel shaped lead and method for manufacturing the same
JP2011077458A (ja) *	2009-10-01	2011-04-14	Panasonic Corp	レーザー装置
US20110280267A1 (en) *	2010-05-14	2011-11-17	Sanyo Electric Co., Ltd.	Semiconductor laser apparatus and optical apparatus
KR200479264Y1 (ko)	2014-12-15	2016-01-08	디피씨 주식회사	변압기용 단자구조체
CN105090782B (zh) *	2015-07-17	2018-07-27	开发晶照明（厦门）有限公司	Led灯丝以及灯丝型led灯泡
JP6976094B2 (ja) *	2017-07-18	2021-12-08	日本特殊陶業株式会社	発光素子搭載用パッケージ
CN109962404A (zh) *	2017-12-26	2019-07-02	西安炬光科技股份有限公司	半导体激光模块
US11081857B2 (en) *	2018-12-06	2021-08-03	Sharp Kabushiki Kaisha	Semiconductor laser device and manufacturing method therefor
US11889618B2 (en) *	2019-04-25	2024-01-30	Kyocera Corporation	Wiring board, electronic component package, and electronic apparatus
CN111916439B (zh) *	2020-09-03	2025-01-10	哈尔滨海格微电子科技有限公司	一种贴片式光接收器、光接收模组和电子设备
CN116365355A (zh) *	2023-03-13	2023-06-30	潍坊华光光电子有限公司	一种能够输出圆偏振光的半导体激光器及其阵列组件

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JPS60226153A (ja) *	1984-04-25	1985-11-11	Matsushita Electronics Corp	電力半導体装置用リ−ドフレ−ム
US4713640A (en)	1986-12-22	1987-12-15	Westinghouse Electric Corp.	Molded-case circuit breaker with improved contact arm assembly, toggle link means and arc shield component
JPS63168931U (de) *	1987-04-24	1988-11-02
JPH0254263A (ja)	1988-08-18	1990-02-23	Konica Corp	ハロゲン化銀カラー写真感光材料用安定液および該感光材料の処理方法
JPH0254263U (de) *	1988-10-12	1990-04-19
US5444726A (en) *	1990-11-07	1995-08-22	Fuji Electric Co., Ltd.	Semiconductor laser device
US5367530A (en) *	1992-05-29	1994-11-22	Sanyo Electric Co., Ltd.	Semiconductor laser apparatus
JP3059831B2 (ja)	1992-07-31	2000-07-04	三洋電機株式会社	半導体レーザ装置
JPH0645703A (ja)	1992-07-23	1994-02-18	Sanyo Electric Co Ltd	半導体レーザ装置
JPH06196817A (ja) *	1992-12-24	1994-07-15	Sharp Corp	半導体レーザ装置
JPH07321407A (ja)	1993-04-05	1995-12-08	Fuji Electric Co Ltd	樹脂封止形レーザーダイオード装置
US6784511B1 (en) *	1994-01-20	2004-08-31	Fuji Electric Co., Ltd.	Resin-sealed laser diode device
JP3524579B2 (ja)	1994-05-31	2004-05-10	三洋電機株式会社	半導体レーザ装置
JPH0992931A (ja)	1995-09-26	1997-04-04	Fuji Electric Co Ltd	半導体レーザ装置
JP3082695B2 (ja)	1997-01-16	2000-08-28	日本電気株式会社	半導体レーザ装置、その製造方法
US6020632A (en) *	1997-02-26	2000-02-01	Motorola, Inc.	Electronic component including an adjustable cap
JP3186684B2 (ja)	1997-12-29	2001-07-11	ソニー株式会社	半導体レーザ装置
JPH11307871A (ja)	1998-04-23	1999-11-05	Nec Corp	半導体レーザ装置
US6335548B1 (en) *	1999-03-15	2002-01-01	Gentex Corporation	Semiconductor radiation emitter package
JP4010679B2 (ja)	1998-11-30	2007-11-21	三洋電機株式会社	半導体レーザ装置及びその製造方法

2001
- 2001-06-21 EP EP01943807A patent/EP1313184B1/de not_active Expired - Lifetime
- 2001-06-21 US US10/333,072 patent/US6885076B2/en not_active Expired - Fee Related
- 2001-06-21 DE DE60129991T patent/DE60129991T2/de not_active Expired - Lifetime
- 2001-06-21 CN CNB018129641A patent/CN1258252C/zh not_active Expired - Fee Related
- 2001-06-21 WO PCT/JP2001/005340 patent/WO2002007275A1/ja not_active Ceased
- 2001-06-21 KR KR1020037000719A patent/KR100542336B1/ko not_active Expired - Fee Related

Also Published As

Publication number	Publication date
HK1057654A1 (en)	2004-04-08
EP1313184A1 (de)	2003-05-21
WO2002007275A1 (en)	2002-01-24
EP1313184A4 (de)	2005-12-07
EP1313184B1 (de)	2007-08-15
KR100542336B1 (ko)	2006-01-11
US6885076B2 (en)	2005-04-26
KR20030029107A (ko)	2003-04-11
CN1258252C (zh)	2006-05-31
DE60129991T2 (de)	2008-04-30
US20030178711A1 (en)	2003-09-25
CN1443385A (zh)	2003-09-17

Publication	Publication Date	Title
DE60129991D1 (de)	2007-09-27	Halbleiterlaserbauelement
DE60239445D1 (de)	2011-04-28	Halbleiterlaserstruktur
DE60227232D1 (de)	2008-08-07	Halbleiterlaserstruktur
DE60224273D1 (de)	2008-02-07	Mehrstrahl-halbleiterlaserelement
DE50100847D1 (de)	2003-11-27	Thermoelektrisches element
DE60234590D1 (de)	2010-01-14	Nitridhalbleiterlaser
DE50112868D1 (de)	2007-09-27	Halbleiter-chip
DE60101190D1 (de)	2003-12-18	Laservorrichtung
DE60031579D1 (de)	2006-12-07	Optisches element
DE60143152D1 (de)	2010-11-11	Optoelektrisches element
DE69904265D1 (de)	2003-01-16	Halbleiterlaser
DE50101940D1 (de)	2004-05-13	Laservorrichtung
FI20002408L (fi)	2002-05-02	Jäähdytyselementti
DE60222724D1 (de)	2007-11-15	Halbleiterlaserelement
DE60123576D1 (de)	2006-11-16	Halbleiterlaserherstellungsverfahren
DE50107683D1 (de)	2006-02-23	Knautschelement
FI20002116A0 (fi)	2000-09-26	Levynkäsittelylaite
DE10191585B8 (de)	2009-07-02	Halbleitervorrichtung
DE60118475D1 (de)	2006-05-18	Optisches Element
DE60041742D1 (de)	2009-04-23	Halbleiterlaser
DE69922427D1 (de)	2005-01-13	Halbleiterlaser
DE50100556D1 (de)	2003-10-02	Knautschelement
DE69905197D1 (de)	2003-03-06	Halbleiterlaser
DE50104634D1 (de)	2004-12-30	Halbleiter-laser
DE10196557T1 (de)	2003-08-07	Laserstrahlvorrichtung

Legal Events

Date	Code	Title	Description
2008-09-04	8364	No opposition during term of opposition