DE10191585B8 - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung Download PDF

Info

Publication number: DE10191585B8
Authority: DE; Germany
Prior art keywords: semiconductor device; semiconductor
Prior art date: 2000-04-25
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE10191585T

Other languages

English (en)

Other versions

DE10191585T1 (de

DE10191585B4 (de

Inventor

Kazuhiro Kariya Maeno

Eiji Kariya Kono

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Toyota Industries Corp

Original Assignee

Toyota Industries Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2000-04-25

Filing date

2001-04-24

Publication date

2009-07-02

2001-04-24 Application filed by Toyota Industries Corp filed Critical Toyota Industries Corp

2002-05-29 Publication of DE10191585T1 publication Critical patent/DE10191585T1/de

2009-02-26 Application granted granted Critical

2009-02-26 Publication of DE10191585B4 publication Critical patent/DE10191585B4/de

2009-07-02 Publication of DE10191585B8 publication Critical patent/DE10191585B8/de

2021-04-25 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- H10W90/00—
- H10W72/07554—
- H10W72/5445—
- H10W72/547—
- H10W90/754—

DE10191585T 2000-04-25 2001-04-24 Halbleitervorrichtung Expired - Fee Related DE10191585B8 (de)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
JP2000-124447		2000-04-25
JP2000124447		2000-04-25
PCT/JP2001/003524 WO2001082376A1 (fr)	2000-04-25	2001-04-24	Dispositif a semi-conducteur

Publications (3)

Publication Number	Publication Date
DE10191585T1 DE10191585T1 (de)	2002-05-29
DE10191585B4 DE10191585B4 (de)	2009-02-26
DE10191585B8 true DE10191585B8 (de)	2009-07-02

Family

ID=18634579

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE10191585T Expired - Fee Related DE10191585B8 (de)	2000-04-25	2001-04-24	Halbleitervorrichtung

Country Status (3)

Country	Link
US (1)	US6885097B2 (de)
DE (1)	DE10191585B8 (de)
WO (1)	WO2001082376A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP4461639B2 (ja) *	2001-05-29	2010-05-12	株式会社豊田自動織機	半導体装置
JP2003168532A (ja) *	2001-11-29	2003-06-13	Texas Instr Japan Ltd	半導体装置用ソケットおよび半導体装置のソケットへの取付け方法
US7119437B2 (en) *	2002-12-26	2006-10-10	Yamaha Hatsudoki Kabushiki Kaisha	Electronic substrate, power module and motor driver
KR100574954B1 (ko) *	2003-11-15	2006-04-28	삼성전자주식회사	중앙부 패드와 재 배선된 패드에서 와이어 본딩된집적회로 칩패키지
US7149088B2 (en) *	2004-06-18	2006-12-12	International Rectifier Corporation	Half-bridge power module with insert molded heatsinks
JP4242401B2 (ja) *	2006-06-29	2009-03-25	三菱電機株式会社	半導体装置
US7773381B2 (en)	2007-09-26	2010-08-10	Rohm Co., Ltd.	Semiconductor device
JP4523632B2 (ja) *	2007-12-11	2010-08-11	三菱電機株式会社	半導体装置
US8237260B2 (en) *	2008-11-26	2012-08-07	Infineon Technologies Ag	Power semiconductor module with segmented base plate
JP5481104B2 (ja)	2009-06-11	2014-04-23	ルネサスエレクトロニクス株式会社	半導体装置
JP5338803B2 (ja) *	2010-01-22	2013-11-13	株式会社デンソー	電力変換装置
WO2012039115A1 (ja) *	2010-09-24	2012-03-29	オンセミコンダクター・トレーディング・リミテッド	回路装置
US8405206B1 (en) *	2011-09-30	2013-03-26	Infineon Technologies Ag	Low-inductive semiconductor module
KR102034717B1 (ko) *	2013-02-07	2019-10-21	삼성전자주식회사	파워모듈용 기판, 파워모듈용 터미널 및 이들을 포함하는 파워모듈
DE102014109385A1 (de)	2014-07-04	2016-01-07	Karlsruher Institut für Technologie	Elektronische Bauteilanordnung
JP6485257B2 (ja) *	2015-07-01	2019-03-20	富士電機株式会社	半導体装置及び半導体装置の製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH06283639A (ja) *	1993-03-25	1994-10-07	Sanyo Electric Co Ltd	混成集積回路
JPH0758272A (ja) *	1993-08-20	1995-03-03	Origin Electric Co Ltd	電力用半導体装置
US5444295A (en) *	1993-09-07	1995-08-22	Delco Electronics Corp.	Linear dual switch module
JPH1041460A (ja) *	1996-05-20	1998-02-13	Fuji Electric Co Ltd	半導体装置
US5761040A (en) *	1995-12-20	1998-06-02	Mitsubishi Denki Kabushiki Kaisha	Semiconductor device
DE29921937U1 (de) *	1999-12-15	2000-03-09	Danfoss Silicon Power GmbH, 24589 Nortorf	Leistungshalbleitermodul

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3735057A (en) *	1971-09-27	1973-05-22	Motorola Inc	Compensated crosspoint switching system
US5086337A (en) *	1987-01-19	1992-02-04	Hitachi, Ltd.	Connecting structure of electronic part and electronic device using the structure
JP2924498B2 (ja)	1992-07-16	1999-07-26	富士電機株式会社	半導体装置
FR2701600B1 (fr) *	1993-02-10	1995-09-08	Gec Alsthom Transport Sa	Dispositif de refroidissement de composants electriques de puissance.
JP3269745B2 (ja) *	1995-01-17	2002-04-02	株式会社日立製作所	モジュール型半導体装置
JP3172393B2 (ja)	1995-04-27	2001-06-04	三洋電機株式会社	混成集積回路装置
JP3357220B2 (ja) *	1995-07-07	2002-12-16	三菱電機株式会社	半導体装置
JP3410969B2 (ja) *	1997-06-30	2003-05-26	株式会社東芝	半導体装置
US6060772A (en)	1997-06-30	2000-05-09	Kabushiki Kaisha Toshiba	Power semiconductor module with a plurality of semiconductor chips
US6147869A (en) *	1997-11-24	2000-11-14	International Rectifier Corp.	Adaptable planar module
US5926372A (en) *	1997-12-23	1999-07-20	Ford Global Technologies, Inc.	Power block assembly and method of making same
JPH11330283A (ja) *	1998-05-15	1999-11-30	Toshiba Corp	半導体モジュール及び大型半導体モジュール
JP3460973B2 (ja) *	1999-12-27	2003-10-27	三菱電機株式会社	電力変換装置
DE10101086B4 (de) *	2000-01-12	2007-11-08	International Rectifier Corp., El Segundo	Leistungs-Moduleinheit
US6417532B2 (en) *	2000-01-28	2002-07-09	Kabushiki Kaisha Toshiba	Power semiconductor module for use in power conversion units with downsizing requirements

2001
- 2001-04-24 DE DE10191585T patent/DE10191585B8/de not_active Expired - Fee Related
- 2001-04-24 WO PCT/JP2001/003524 patent/WO2001082376A1/ja not_active Ceased
- 2001-04-24 US US10/019,201 patent/US6885097B2/en not_active Expired - Fee Related

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH06283639A (ja) *	1993-03-25	1994-10-07	Sanyo Electric Co Ltd	混成集積回路
JPH0758272A (ja) *	1993-08-20	1995-03-03	Origin Electric Co Ltd	電力用半導体装置
US5444295A (en) *	1993-09-07	1995-08-22	Delco Electronics Corp.	Linear dual switch module
US5761040A (en) *	1995-12-20	1998-06-02	Mitsubishi Denki Kabushiki Kaisha	Semiconductor device
JPH1041460A (ja) *	1996-05-20	1998-02-13	Fuji Electric Co Ltd	半導体装置
DE29921937U1 (de) *	1999-12-15	2000-03-09	Danfoss Silicon Power GmbH, 24589 Nortorf	Leistungshalbleitermodul

Also Published As

Publication number	Publication date
WO2001082376A8 (fr)	2002-01-03
US6885097B2 (en)	2005-04-26
DE10191585T1 (de)	2002-05-29
US20020158327A1 (en)	2002-10-31
WO2001082376A1 (fr)	2001-11-01
DE10191585B4 (de)	2009-02-26

Publication	Publication Date	Title
EP1231640A4 (de)	2008-10-08	Halbleiterbauelement
DE60036594D1 (de)	2007-11-15	Feldeffekt-Halbleiterbauelement
DE60004614D1 (de)	2003-09-25	Integrierte Halbleitervorrichtung
FR2817658B1 (fr)	2009-07-17	Dispositif semi-conducteur
DE60123496D1 (de)	2006-11-16	Verbindungsherstellungsvorrichtung
DE69937739D1 (de)	2008-01-24	Halbleitervorrichtung
DE60142141D1 (de)	2010-07-01	Halbleiterbauelement
DE60211244D1 (de)	2006-06-14	Halbleiterbauelement
DE60126075D1 (de)	2007-03-08	Auftragsvorrichtung
DE60005959D1 (de)	2003-11-20	Halbleiteranordnung
DE60127017D1 (de)	2007-04-19	Aufschlämmungsrückfluss-Vorrichtung
DE10191585B8 (de)	2009-07-02	Halbleitervorrichtung
FI20002116A0 (fi)	2000-09-26	Levynkäsittelylaite
NO20005524L (no)	2001-08-29	Ror-i-roranordning
DE60037682D1 (de)	2008-02-14	Abbildungsvorrichtung
DE10223703B4 (de)	2005-10-20	Bandverbindungsvorrichtung
DE60218009D1 (de)	2007-03-22	Halbleiterspeichervorrichtung
DE60138678D1 (de)	2009-06-25	Integriertes gasioliertes Schaltgerät
EP1229591A4 (de)	2007-01-03	Halbleiteranordnung
DE60008047D1 (de)	2004-03-11	Feldeffekt-Halbleiteranordnung
DE50100540D1 (de)	2003-10-02	Multichip-Halbleiteranordnung
DE60019144D1 (de)	2005-05-04	Halbleitervorrichtung
DE60215291D1 (de)	2006-11-23	Halbleiter Speicheranordnung
DE60041030D1 (de)	2009-01-22	Halbleiterbauelement
DE50102286D1 (de)	2004-06-17	Haltevorrichtung

Legal Events

Date	Code	Title	Description
2002-05-29	OP8	Request for examination as to paragraph 44 patent law
2009-06-10	8381	Inventor (new situation)	Inventor name: MAENO, KAZUHIRO, KARIYA, AICHI, JP Inventor name: KONO, EIJI, KARIYA, AICHI, JP
2009-07-02	8396	Reprint of erroneous front page
2009-08-20	8364	No opposition during term of opposition
2010-02-18	8339	Ceased/non-payment of the annual fee