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DE1920397A1 - Stabilisiertes Halbleiterbauelement - Google Patents

Stabilisiertes Halbleiterbauelement

Info

Publication number
DE1920397A1
DE1920397A1 DE19691920397 DE1920397A DE1920397A1 DE 1920397 A1 DE1920397 A1 DE 1920397A1 DE 19691920397 DE19691920397 DE 19691920397 DE 1920397 A DE1920397 A DE 1920397A DE 1920397 A1 DE1920397 A1 DE 1920397A1
Authority
DE
Germany
Prior art keywords
zone
conduction type
metal contact
semiconductor component
insulator layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19691920397
Other languages
German (de)
English (en)
Inventor
Dathe Dipl-Phys Joachim
Grasser Dipl-Phys Leo
Mueller Dipl-Phys Dr Wolfgang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Priority to DE19691920397 priority Critical patent/DE1920397A1/de
Priority to NL7002197A priority patent/NL7002197A/xx
Priority to FR7013787A priority patent/FR2039343B1/fr
Priority to CH571170A priority patent/CH501311A/de
Priority to AT358070A priority patent/AT316652B/de
Priority to GB08921/70A priority patent/GB1270214A/en
Priority to SE05573/70A priority patent/SE366871B/xx
Publication of DE1920397A1 publication Critical patent/DE1920397A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/118—Electrodes comprising insulating layers having particular dielectric or electrostatic properties, e.g. having static charges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10W20/40—

Landscapes

  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)
DE19691920397 1969-04-22 1969-04-22 Stabilisiertes Halbleiterbauelement Pending DE1920397A1 (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
DE19691920397 DE1920397A1 (de) 1969-04-22 1969-04-22 Stabilisiertes Halbleiterbauelement
NL7002197A NL7002197A (fr) 1969-04-22 1970-02-17
FR7013787A FR2039343B1 (fr) 1969-04-22 1970-04-16
CH571170A CH501311A (de) 1969-04-22 1970-04-17 Stabilisiertes Halbleiterbauelement
AT358070A AT316652B (de) 1969-04-22 1970-04-20 Stabilisiertes Halbleiterbauelement
GB08921/70A GB1270214A (en) 1969-04-22 1970-04-21 Improvements in or relating to stabilised semiconductor components
SE05573/70A SE366871B (fr) 1969-04-22 1970-04-22

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691920397 DE1920397A1 (de) 1969-04-22 1969-04-22 Stabilisiertes Halbleiterbauelement

Publications (1)

Publication Number Publication Date
DE1920397A1 true DE1920397A1 (de) 1970-11-12

Family

ID=5731933

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19691920397 Pending DE1920397A1 (de) 1969-04-22 1969-04-22 Stabilisiertes Halbleiterbauelement

Country Status (7)

Country Link
AT (1) AT316652B (fr)
CH (1) CH501311A (fr)
DE (1) DE1920397A1 (fr)
FR (1) FR2039343B1 (fr)
GB (1) GB1270214A (fr)
NL (1) NL7002197A (fr)
SE (1) SE366871B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2202367A1 (fr) * 1972-10-04 1974-05-03 Hitachi Ltd

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3220250A1 (de) * 1982-05-28 1983-12-01 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement mit planarstruktur
GB2193596A (en) * 1986-08-08 1988-02-10 Philips Electronic Associated A semiconductor diode
DE58907758D1 (de) * 1988-09-20 1994-07-07 Siemens Ag Planarer pn-Übergang hoher Spannungsfestigkeit.
CN104332499B (zh) * 2013-07-22 2017-08-25 北大方正集团有限公司 一种vdmos器件及其终端结构的形成方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3343049A (en) * 1964-06-18 1967-09-19 Ibm Semiconductor devices and passivation thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2202367A1 (fr) * 1972-10-04 1974-05-03 Hitachi Ltd

Also Published As

Publication number Publication date
GB1270214A (en) 1972-04-12
NL7002197A (fr) 1970-10-26
FR2039343A1 (fr) 1971-01-15
SE366871B (fr) 1974-05-06
FR2039343B1 (fr) 1975-01-10
CH501311A (de) 1970-12-31
AT316652B (de) 1974-07-25

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Legal Events

Date Code Title Description
OHW Rejection