SE366871B - - Google Patents
Info
- Publication number
- SE366871B SE366871B SE05573/70A SE557370A SE366871B SE 366871 B SE366871 B SE 366871B SE 05573/70 A SE05573/70 A SE 05573/70A SE 557370 A SE557370 A SE 557370A SE 366871 B SE366871 B SE 366871B
- Authority
- SE
- Sweden
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/111—Field plates
- H10D64/112—Field plates comprising multiple field plate segments
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/118—Electrodes comprising insulating layers having particular dielectric or electrostatic properties, e.g. having static charges
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H10W20/40—
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19691920397 DE1920397A1 (de) | 1969-04-22 | 1969-04-22 | Stabilisiertes Halbleiterbauelement |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE366871B true SE366871B (xx) | 1974-05-06 |
Family
ID=5731933
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE05573/70A SE366871B (xx) | 1969-04-22 | 1970-04-22 |
Country Status (7)
| Country | Link |
|---|---|
| AT (1) | AT316652B (xx) |
| CH (1) | CH501311A (xx) |
| DE (1) | DE1920397A1 (xx) |
| FR (1) | FR2039343B1 (xx) |
| GB (1) | GB1270214A (xx) |
| NL (1) | NL7002197A (xx) |
| SE (1) | SE366871B (xx) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5218070B2 (xx) * | 1972-10-04 | 1977-05-19 | ||
| DE3220250A1 (de) * | 1982-05-28 | 1983-12-01 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterbauelement mit planarstruktur |
| GB2193596A (en) * | 1986-08-08 | 1988-02-10 | Philips Electronic Associated | A semiconductor diode |
| DE58907758D1 (de) * | 1988-09-20 | 1994-07-07 | Siemens Ag | Planarer pn-Übergang hoher Spannungsfestigkeit. |
| CN104332499B (zh) * | 2013-07-22 | 2017-08-25 | 北大方正集团有限公司 | 一种vdmos器件及其终端结构的形成方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3343049A (en) * | 1964-06-18 | 1967-09-19 | Ibm | Semiconductor devices and passivation thereof |
-
1969
- 1969-04-22 DE DE19691920397 patent/DE1920397A1/de active Pending
-
1970
- 1970-02-17 NL NL7002197A patent/NL7002197A/xx unknown
- 1970-04-16 FR FR7013787A patent/FR2039343B1/fr not_active Expired
- 1970-04-17 CH CH571170A patent/CH501311A/de not_active IP Right Cessation
- 1970-04-20 AT AT358070A patent/AT316652B/de not_active IP Right Cessation
- 1970-04-21 GB GB08921/70A patent/GB1270214A/en not_active Expired
- 1970-04-22 SE SE05573/70A patent/SE366871B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CH501311A (de) | 1970-12-31 |
| DE1920397A1 (de) | 1970-11-12 |
| AT316652B (de) | 1974-07-25 |
| NL7002197A (xx) | 1970-10-26 |
| GB1270214A (en) | 1972-04-12 |
| FR2039343A1 (xx) | 1971-01-15 |
| FR2039343B1 (xx) | 1975-01-10 |