[go: up one dir, main page]

NL7002197A - - Google Patents

Info

Publication number
NL7002197A
NL7002197A NL7002197A NL7002197A NL7002197A NL 7002197 A NL7002197 A NL 7002197A NL 7002197 A NL7002197 A NL 7002197A NL 7002197 A NL7002197 A NL 7002197A NL 7002197 A NL7002197 A NL 7002197A
Authority
NL
Netherlands
Application number
NL7002197A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7002197A publication Critical patent/NL7002197A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/118—Electrodes comprising insulating layers having particular dielectric or electrostatic properties, e.g. having static charges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10W20/40—
NL7002197A 1969-04-22 1970-02-17 NL7002197A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691920397 DE1920397A1 (de) 1969-04-22 1969-04-22 Stabilisiertes Halbleiterbauelement

Publications (1)

Publication Number Publication Date
NL7002197A true NL7002197A (fr) 1970-10-26

Family

ID=5731933

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7002197A NL7002197A (fr) 1969-04-22 1970-02-17

Country Status (7)

Country Link
AT (1) AT316652B (fr)
CH (1) CH501311A (fr)
DE (1) DE1920397A1 (fr)
FR (1) FR2039343B1 (fr)
GB (1) GB1270214A (fr)
NL (1) NL7002197A (fr)
SE (1) SE366871B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5113237A (en) * 1988-09-20 1992-05-12 Siemens Aktiengesellschaft Planar pn-junction of high electric strength

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5218070B2 (fr) * 1972-10-04 1977-05-19
DE3220250A1 (de) * 1982-05-28 1983-12-01 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement mit planarstruktur
GB2193596A (en) * 1986-08-08 1988-02-10 Philips Electronic Associated A semiconductor diode
CN104332499B (zh) * 2013-07-22 2017-08-25 北大方正集团有限公司 一种vdmos器件及其终端结构的形成方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3343049A (en) * 1964-06-18 1967-09-19 Ibm Semiconductor devices and passivation thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5113237A (en) * 1988-09-20 1992-05-12 Siemens Aktiengesellschaft Planar pn-junction of high electric strength

Also Published As

Publication number Publication date
CH501311A (de) 1970-12-31
SE366871B (fr) 1974-05-06
DE1920397A1 (de) 1970-11-12
AT316652B (de) 1974-07-25
GB1270214A (en) 1972-04-12
FR2039343A1 (fr) 1971-01-15
FR2039343B1 (fr) 1975-01-10

Similar Documents

Publication Publication Date Title
AU465413B2 (fr)
AU450150B2 (fr)
FR2039343B1 (fr)
AU470301B1 (fr)
AU427401B2 (fr)
CS151563B2 (fr)
AU470661B1 (fr)
AU442554B2 (fr)
AU442322B2 (fr)
AU442357B2 (fr)
AU428074B2 (fr)
AU442463B2 (fr)
AU442535B2 (fr)
AU442538B2 (fr)
AU5598769A (fr)
AU4949169A (fr)
AU5397469A (fr)
AU5228269A (fr)
AU5109569A (fr)
AU4540468A (fr)
CS150272B2 (fr)
AU4953367A (fr)
CH575443A5 (fr)
AU4982068A (fr)
AU4815038A (fr)