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CH501311A - Stabilisiertes Halbleiterbauelement - Google Patents

Stabilisiertes Halbleiterbauelement

Info

Publication number
CH501311A
CH501311A CH571170A CH571170A CH501311A CH 501311 A CH501311 A CH 501311A CH 571170 A CH571170 A CH 571170A CH 571170 A CH571170 A CH 571170A CH 501311 A CH501311 A CH 501311A
Authority
CH
Switzerland
Prior art keywords
semiconductor component
stabilized semiconductor
stabilized
component
semiconductor
Prior art date
Application number
CH571170A
Other languages
German (de)
English (en)
Inventor
Dathe Joachim
Grasser Leo
Wolfgang Dr Mueller
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH501311A publication Critical patent/CH501311A/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/118—Electrodes comprising insulating layers having particular dielectric or electrostatic properties, e.g. having static charges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10W20/40—
CH571170A 1969-04-22 1970-04-17 Stabilisiertes Halbleiterbauelement CH501311A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691920397 DE1920397A1 (de) 1969-04-22 1969-04-22 Stabilisiertes Halbleiterbauelement

Publications (1)

Publication Number Publication Date
CH501311A true CH501311A (de) 1970-12-31

Family

ID=5731933

Family Applications (1)

Application Number Title Priority Date Filing Date
CH571170A CH501311A (de) 1969-04-22 1970-04-17 Stabilisiertes Halbleiterbauelement

Country Status (7)

Country Link
AT (1) AT316652B (fr)
CH (1) CH501311A (fr)
DE (1) DE1920397A1 (fr)
FR (1) FR2039343B1 (fr)
GB (1) GB1270214A (fr)
NL (1) NL7002197A (fr)
SE (1) SE366871B (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0095755A3 (en) * 1982-05-28 1986-04-16 Siemens Aktiengesellschaft Semiconductor device having a planar structure
EP0255971A3 (en) * 1986-08-08 1988-07-20 Philips Electronic And Associated Industries Limited A semiconductor diode

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5218070B2 (fr) * 1972-10-04 1977-05-19
DE58907758D1 (de) * 1988-09-20 1994-07-07 Siemens Ag Planarer pn-Übergang hoher Spannungsfestigkeit.
CN104332499B (zh) * 2013-07-22 2017-08-25 北大方正集团有限公司 一种vdmos器件及其终端结构的形成方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3343049A (en) * 1964-06-18 1967-09-19 Ibm Semiconductor devices and passivation thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0095755A3 (en) * 1982-05-28 1986-04-16 Siemens Aktiengesellschaft Semiconductor device having a planar structure
EP0255971A3 (en) * 1986-08-08 1988-07-20 Philips Electronic And Associated Industries Limited A semiconductor diode

Also Published As

Publication number Publication date
SE366871B (fr) 1974-05-06
DE1920397A1 (de) 1970-11-12
AT316652B (de) 1974-07-25
NL7002197A (fr) 1970-10-26
GB1270214A (en) 1972-04-12
FR2039343A1 (fr) 1971-01-15
FR2039343B1 (fr) 1975-01-10

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Legal Events

Date Code Title Description
PL Patent ceased