DE19927604A1 - Silicium mit strukturierter Sauerstoffdotierung, dessen Herstellung und Verwendung - Google Patents
Silicium mit strukturierter Sauerstoffdotierung, dessen Herstellung und VerwendungInfo
- Publication number
- DE19927604A1 DE19927604A1 DE19927604A DE19927604A DE19927604A1 DE 19927604 A1 DE19927604 A1 DE 19927604A1 DE 19927604 A DE19927604 A DE 19927604A DE 19927604 A DE19927604 A DE 19927604A DE 19927604 A1 DE19927604 A1 DE 19927604A1
- Authority
- DE
- Germany
- Prior art keywords
- silicon
- oxygen
- dislocations
- atoms
- solar cells
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 101
- 239000010703 silicon Substances 0.000 title claims abstract description 101
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title claims abstract description 55
- 239000001301 oxygen Substances 0.000 title claims abstract description 55
- 229910052760 oxygen Inorganic materials 0.000 title claims abstract description 55
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 93
- 238000000034 method Methods 0.000 claims description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 238000002425 crystallisation Methods 0.000 claims description 11
- 230000008025 crystallization Effects 0.000 claims description 11
- 239000007789 gas Substances 0.000 claims description 9
- 239000002244 precipitate Substances 0.000 claims description 9
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 claims description 6
- 238000005266 casting Methods 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims 4
- 238000009825 accumulation Methods 0.000 claims 1
- 238000007669 thermal treatment Methods 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 17
- 239000013078 crystal Substances 0.000 abstract description 10
- 239000007858 starting material Substances 0.000 description 10
- 230000007547 defect Effects 0.000 description 9
- 239000011888 foil Substances 0.000 description 9
- 239000002210 silicon-based material Substances 0.000 description 9
- 239000002800 charge carrier Substances 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 8
- 239000007788 liquid Substances 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 239000000523 sample Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 108091006146 Channels Proteins 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- KMUONIBRACKNSN-UHFFFAOYSA-N potassium dichromate Chemical compound [K+].[K+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O KMUONIBRACKNSN-UHFFFAOYSA-N 0.000 description 4
- 150000003376 silicon Chemical class 0.000 description 4
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000029142 excretion Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 238000005231 Edge Defined Film Fed Growth Methods 0.000 description 2
- CFOAUMXQOCBWNJ-UHFFFAOYSA-N [B].[Si] Chemical compound [B].[Si] CFOAUMXQOCBWNJ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000004753 textile Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001639 boron compounds Chemical class 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 210000003608 fece Anatomy 0.000 description 1
- 238000007518 final polishing process Methods 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000010191 image analysis Methods 0.000 description 1
- 239000006101 laboratory sample Substances 0.000 description 1
- 239000010871 livestock manure Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000000289 melt material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 150000003018 phosphorus compounds Chemical class 0.000 description 1
- 230000002940 repellent Effects 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/007—Pulling on a substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/206—Controlling or regulating the thermal history of growing the ingot
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
- H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (11)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19927604A DE19927604A1 (de) | 1999-06-17 | 1999-06-17 | Silicium mit strukturierter Sauerstoffdotierung, dessen Herstellung und Verwendung |
| EP00111086A EP1061160A1 (de) | 1999-06-17 | 2000-06-05 | Silicium mit struktierter Sauerstoffdotierung, dessen Herstellung und Verwendung |
| JP2000170973A JP2001048518A (ja) | 1999-06-17 | 2000-06-07 | 構造化される酸素のドープを伴うシリコン、その製法及び使用法 |
| AU39375/00A AU3937500A (en) | 1999-06-17 | 2000-06-08 | Silicon with structured oxygen doping, its production and use |
| US09/591,518 US6294726B1 (en) | 1999-06-17 | 2000-06-09 | Silicon with structured oxygen doping, its production and use |
| NZ505167A NZ505167A (en) | 1999-06-17 | 2000-06-14 | Silicon with structured oxygen doping, its production and use |
| IL13675800A IL136758A0 (en) | 1999-06-17 | 2000-06-14 | Silicon with structured oxygen doping, its production and use |
| CA002311618A CA2311618A1 (en) | 1999-06-17 | 2000-06-14 | Silicon with structured oxygen doping, its production and use |
| CN00118627A CN1278565A (zh) | 1999-06-17 | 2000-06-16 | 具有结构氧掺杂的硅及其生产方法和用途 |
| KR1020000033141A KR20010066850A (ko) | 1999-06-17 | 2000-06-16 | 구조화 산소로 도핑된 규소, 그의 제조 방법 및 용도 |
| NO20003125A NO20003125L (no) | 1999-06-17 | 2000-06-16 | Silisiummateriale med strukturert oksygendoping, dets fremstilling og anvendelse |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19927604A DE19927604A1 (de) | 1999-06-17 | 1999-06-17 | Silicium mit strukturierter Sauerstoffdotierung, dessen Herstellung und Verwendung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE19927604A1 true DE19927604A1 (de) | 2000-12-21 |
Family
ID=7911521
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19927604A Withdrawn DE19927604A1 (de) | 1999-06-17 | 1999-06-17 | Silicium mit strukturierter Sauerstoffdotierung, dessen Herstellung und Verwendung |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US6294726B1 (no) |
| EP (1) | EP1061160A1 (no) |
| JP (1) | JP2001048518A (no) |
| KR (1) | KR20010066850A (no) |
| CN (1) | CN1278565A (no) |
| AU (1) | AU3937500A (no) |
| CA (1) | CA2311618A1 (no) |
| DE (1) | DE19927604A1 (no) |
| IL (1) | IL136758A0 (no) |
| NO (1) | NO20003125L (no) |
| NZ (1) | NZ505167A (no) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002057351A (ja) | 2000-08-15 | 2002-02-22 | Shin Etsu Handotai Co Ltd | 太陽電池セルの製造方法および太陽電池セル |
| WO2002016265A1 (en) | 2000-08-21 | 2002-02-28 | Astropower, Inc. | Method and apparatus for purifying silicon |
| JP3855082B2 (ja) * | 2002-10-07 | 2006-12-06 | 国立大学法人東京農工大学 | 多結晶シリコンの作製方法、多結晶シリコン、及び太陽電池 |
| NO322246B1 (no) * | 2004-12-27 | 2006-09-04 | Elkem Solar As | Fremgangsmate for fremstilling av rettet storknede silisiumingots |
| WO2006093099A1 (ja) * | 2005-02-28 | 2006-09-08 | Kyocera Corporation | 多結晶シリコン基板、多結晶シリコンインゴット及びそれらの製造方法、光電変換素子、並びに光電変換モジュール |
| JP5010468B2 (ja) * | 2005-03-24 | 2012-08-29 | 京セラ株式会社 | 光電変換素子とその製造方法、及びこれを用いた光電変換モジュール |
| US7771623B2 (en) * | 2005-06-07 | 2010-08-10 | E.I. du Pont de Nemours and Company Dupont (UK) Limited | Aluminum thick film composition(s), electrode(s), semiconductor device(s) and methods of making thereof |
| US7824579B2 (en) | 2005-06-07 | 2010-11-02 | E. I. Du Pont De Nemours And Company | Aluminum thick film composition(s), electrode(s), semiconductor device(s) and methods of making thereof |
| US7718092B2 (en) * | 2005-10-11 | 2010-05-18 | E.I. Du Pont De Nemours And Company | Aluminum thick film composition(s), electrode(s), semiconductor device(s) and methods of making thereof |
| TW200818327A (en) * | 2006-09-29 | 2008-04-16 | Sumco Techxiv Corp | Silicon wafer heat treatment method |
| US7880204B2 (en) * | 2006-10-02 | 2011-02-01 | Massachusetts Institute Of Technology | System and method for providing a high frequency response silicon photodetector |
| US8968467B2 (en) | 2007-06-27 | 2015-03-03 | Silicor Materials Inc. | Method and system for controlling resistivity in ingots made of compensated feedstock silicon |
| AT505168B1 (de) | 2007-06-29 | 2008-11-15 | Span Gerhard Dipl Ing Dr | Thermoelektrisches element |
| US8153456B2 (en) * | 2010-01-20 | 2012-04-10 | Varian Semiconductor Equipment Associates, Inc. | Bifacial solar cell using ion implantation |
| DE102010001094A1 (de) * | 2010-01-21 | 2011-07-28 | Evonik Degussa GmbH, 45128 | Verfahren zur Entkohlung einer Siliciumschmelze |
| MY181209A (en) * | 2014-04-30 | 2020-12-21 | 1366 Tech Inc | Methods and apparati for making thin semi-conductor wafers with locally controlled regions that are relatively thicker than other regions and such wafers |
| JP5938113B1 (ja) * | 2015-01-05 | 2016-06-22 | 信越化学工業株式会社 | 太陽電池用基板の製造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL8102102A (nl) * | 1981-04-29 | 1982-11-16 | Philips Nv | Werkwijze voor het optrekken van een siliciumstaaf en halfgeleiderinrichting vervaardigd uit de siliciumstaaf. |
| DE3419137A1 (de) | 1984-05-23 | 1985-11-28 | Bayer Ag, 5090 Leverkusen | Verfahren und vorrichtung zur herstellung von halbleiterfolien |
| US5106763A (en) * | 1988-11-15 | 1992-04-21 | Mobil Solar Energy Corporation | Method of fabricating solar cells |
| US5156978A (en) | 1988-11-15 | 1992-10-20 | Mobil Solar Energy Corporation | Method of fabricating solar cells |
| DE4102484A1 (de) | 1991-01-29 | 1992-07-30 | Bayer Ag | Verfahren zur herstellung von metallscheiben sowie die verwendung von siliciumscheiben |
| DE4105910A1 (de) | 1991-02-26 | 1992-08-27 | Bayer Ag | Verfahren zur herstellung von metallfolien sowie deren verwendung |
| DE4323793A1 (de) * | 1993-07-15 | 1995-01-19 | Wacker Chemitronic | Verfahren zur Herstellung von Stäben oder Blöcken aus beim Erstarren sich ausdehnendem Halbleitermaterial durch Kristallisieren einer aus Granulat erzeugten Schmelze sowie Vorrichtung zu seiner Durchführung |
-
1999
- 1999-06-17 DE DE19927604A patent/DE19927604A1/de not_active Withdrawn
-
2000
- 2000-06-05 EP EP00111086A patent/EP1061160A1/de not_active Withdrawn
- 2000-06-07 JP JP2000170973A patent/JP2001048518A/ja active Pending
- 2000-06-08 AU AU39375/00A patent/AU3937500A/en not_active Abandoned
- 2000-06-09 US US09/591,518 patent/US6294726B1/en not_active Expired - Lifetime
- 2000-06-14 IL IL13675800A patent/IL136758A0/xx unknown
- 2000-06-14 CA CA002311618A patent/CA2311618A1/en not_active Abandoned
- 2000-06-14 NZ NZ505167A patent/NZ505167A/en unknown
- 2000-06-16 NO NO20003125A patent/NO20003125L/no not_active Application Discontinuation
- 2000-06-16 CN CN00118627A patent/CN1278565A/zh active Pending
- 2000-06-16 KR KR1020000033141A patent/KR20010066850A/ko not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| NO20003125D0 (no) | 2000-06-16 |
| CA2311618A1 (en) | 2000-12-17 |
| EP1061160A1 (de) | 2000-12-20 |
| US6294726B1 (en) | 2001-09-25 |
| AU3937500A (en) | 2000-12-21 |
| IL136758A0 (en) | 2001-06-14 |
| NO20003125L (no) | 2000-12-18 |
| KR20010066850A (ko) | 2001-07-11 |
| CN1278565A (zh) | 2001-01-03 |
| NZ505167A (en) | 2001-10-26 |
| JP2001048518A (ja) | 2001-02-20 |
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