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NO20003125D0 - Silisiummateriale med strukturert oksygendoping, dets fremstilling og anvendelse - Google Patents

Silisiummateriale med strukturert oksygendoping, dets fremstilling og anvendelse

Info

Publication number
NO20003125D0
NO20003125D0 NO20003125A NO20003125A NO20003125D0 NO 20003125 D0 NO20003125 D0 NO 20003125D0 NO 20003125 A NO20003125 A NO 20003125A NO 20003125 A NO20003125 A NO 20003125A NO 20003125 D0 NO20003125 D0 NO 20003125D0
Authority
NO
Norway
Prior art keywords
preparation
silicon material
oxygen doping
structured oxygen
structured
Prior art date
Application number
NO20003125A
Other languages
English (en)
Other versions
NO20003125L (no
Inventor
Christian Hossler
Hans-Ulrich Hoefs
Wolfgang Koch
Siegfried Thurm
Otwin Breitenstein
Original Assignee
Bayer Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bayer Ag filed Critical Bayer Ag
Publication of NO20003125D0 publication Critical patent/NO20003125D0/no
Publication of NO20003125L publication Critical patent/NO20003125L/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
NO20003125A 1999-06-17 2000-06-16 Silisiummateriale med strukturert oksygendoping, dets fremstilling og anvendelse NO20003125L (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19927604A DE19927604A1 (de) 1999-06-17 1999-06-17 Silicium mit strukturierter Sauerstoffdotierung, dessen Herstellung und Verwendung

Publications (2)

Publication Number Publication Date
NO20003125D0 true NO20003125D0 (no) 2000-06-16
NO20003125L NO20003125L (no) 2000-12-18

Family

ID=7911521

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20003125A NO20003125L (no) 1999-06-17 2000-06-16 Silisiummateriale med strukturert oksygendoping, dets fremstilling og anvendelse

Country Status (11)

Country Link
US (1) US6294726B1 (no)
EP (1) EP1061160A1 (no)
JP (1) JP2001048518A (no)
KR (1) KR20010066850A (no)
CN (1) CN1278565A (no)
AU (1) AU3937500A (no)
CA (1) CA2311618A1 (no)
DE (1) DE19927604A1 (no)
IL (1) IL136758A0 (no)
NO (1) NO20003125L (no)
NZ (1) NZ505167A (no)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002057351A (ja) 2000-08-15 2002-02-22 Shin Etsu Handotai Co Ltd 太陽電池セルの製造方法および太陽電池セル
WO2002016265A1 (en) 2000-08-21 2002-02-28 Astropower, Inc. Method and apparatus for purifying silicon
JP3855082B2 (ja) * 2002-10-07 2006-12-06 国立大学法人東京農工大学 多結晶シリコンの作製方法、多結晶シリコン、及び太陽電池
NO322246B1 (no) * 2004-12-27 2006-09-04 Elkem Solar As Fremgangsmate for fremstilling av rettet storknede silisiumingots
WO2006093099A1 (ja) * 2005-02-28 2006-09-08 Kyocera Corporation 多結晶シリコン基板、多結晶シリコンインゴット及びそれらの製造方法、光電変換素子、並びに光電変換モジュール
JP5010468B2 (ja) * 2005-03-24 2012-08-29 京セラ株式会社 光電変換素子とその製造方法、及びこれを用いた光電変換モジュール
US7771623B2 (en) * 2005-06-07 2010-08-10 E.I. du Pont de Nemours and Company Dupont (UK) Limited Aluminum thick film composition(s), electrode(s), semiconductor device(s) and methods of making thereof
US7824579B2 (en) 2005-06-07 2010-11-02 E. I. Du Pont De Nemours And Company Aluminum thick film composition(s), electrode(s), semiconductor device(s) and methods of making thereof
US7718092B2 (en) * 2005-10-11 2010-05-18 E.I. Du Pont De Nemours And Company Aluminum thick film composition(s), electrode(s), semiconductor device(s) and methods of making thereof
TW200818327A (en) * 2006-09-29 2008-04-16 Sumco Techxiv Corp Silicon wafer heat treatment method
US7880204B2 (en) * 2006-10-02 2011-02-01 Massachusetts Institute Of Technology System and method for providing a high frequency response silicon photodetector
US8968467B2 (en) 2007-06-27 2015-03-03 Silicor Materials Inc. Method and system for controlling resistivity in ingots made of compensated feedstock silicon
AT505168B1 (de) 2007-06-29 2008-11-15 Span Gerhard Dipl Ing Dr Thermoelektrisches element
US8153456B2 (en) * 2010-01-20 2012-04-10 Varian Semiconductor Equipment Associates, Inc. Bifacial solar cell using ion implantation
DE102010001094A1 (de) * 2010-01-21 2011-07-28 Evonik Degussa GmbH, 45128 Verfahren zur Entkohlung einer Siliciumschmelze
MY181209A (en) * 2014-04-30 2020-12-21 1366 Tech Inc Methods and apparati for making thin semi-conductor wafers with locally controlled regions that are relatively thicker than other regions and such wafers
JP5938113B1 (ja) * 2015-01-05 2016-06-22 信越化学工業株式会社 太陽電池用基板の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8102102A (nl) * 1981-04-29 1982-11-16 Philips Nv Werkwijze voor het optrekken van een siliciumstaaf en halfgeleiderinrichting vervaardigd uit de siliciumstaaf.
DE3419137A1 (de) 1984-05-23 1985-11-28 Bayer Ag, 5090 Leverkusen Verfahren und vorrichtung zur herstellung von halbleiterfolien
US5106763A (en) * 1988-11-15 1992-04-21 Mobil Solar Energy Corporation Method of fabricating solar cells
US5156978A (en) 1988-11-15 1992-10-20 Mobil Solar Energy Corporation Method of fabricating solar cells
DE4102484A1 (de) 1991-01-29 1992-07-30 Bayer Ag Verfahren zur herstellung von metallscheiben sowie die verwendung von siliciumscheiben
DE4105910A1 (de) 1991-02-26 1992-08-27 Bayer Ag Verfahren zur herstellung von metallfolien sowie deren verwendung
DE4323793A1 (de) * 1993-07-15 1995-01-19 Wacker Chemitronic Verfahren zur Herstellung von Stäben oder Blöcken aus beim Erstarren sich ausdehnendem Halbleitermaterial durch Kristallisieren einer aus Granulat erzeugten Schmelze sowie Vorrichtung zu seiner Durchführung

Also Published As

Publication number Publication date
DE19927604A1 (de) 2000-12-21
CA2311618A1 (en) 2000-12-17
EP1061160A1 (de) 2000-12-20
US6294726B1 (en) 2001-09-25
AU3937500A (en) 2000-12-21
IL136758A0 (en) 2001-06-14
NO20003125L (no) 2000-12-18
KR20010066850A (ko) 2001-07-11
CN1278565A (zh) 2001-01-03
NZ505167A (en) 2001-10-26
JP2001048518A (ja) 2001-02-20

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Legal Events

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