DE10195711T1 - Halbleitergerät - Google Patents
HalbleitergerätInfo
- Publication number
- DE10195711T1 DE10195711T1 DE10195711T DE10195711T DE10195711T1 DE 10195711 T1 DE10195711 T1 DE 10195711T1 DE 10195711 T DE10195711 T DE 10195711T DE 10195711 T DE10195711 T DE 10195711T DE 10195711 T1 DE10195711 T1 DE 10195711T1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
- H10D1/64—Variable-capacitance diodes, e.g. varactors
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RU2000132035/28A RU2000132035A (ru) | 2000-12-21 | Полупроводниковый прибор | |
| RU2001107376/28A RU2001107376A (ru) | 2001-03-19 | Полупроводниковый прибор | |
| PCT/RU2001/000506 WO2002050919A1 (fr) | 2000-12-21 | 2001-11-26 | Dispositif semi-conducteur |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE10195711T1 true DE10195711T1 (de) | 2003-12-04 |
Family
ID=26654071
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE10195711T Withdrawn DE10195711T1 (de) | 2000-12-21 | 2001-11-26 | Halbleitergerät |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20030155658A1 (de) |
| DE (1) | DE10195711T1 (de) |
| GB (1) | GB2376343A (de) |
| WO (1) | WO2002050919A1 (de) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102006010495B4 (de) * | 2006-03-02 | 2011-02-17 | Ihp Gmbh - Innovations For High Performance Microelectronics / Leibniz-Institut Für Innovative Mikroelektronik | Verfahren und Substrat zur Immobilisierung von Biomolekülen |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5038184A (en) * | 1989-11-30 | 1991-08-06 | Xerox Corporation | Thin film varactors |
| JP2761961B2 (ja) * | 1990-04-06 | 1998-06-04 | 健一 上山 | 半導体可変容量素子 |
| US5173835A (en) * | 1991-10-15 | 1992-12-22 | Motorola, Inc. | Voltage variable capacitor |
| WO1995031010A1 (fr) * | 1994-05-10 | 1995-11-16 | Valery Moiseevich Ioffe | Diode varicap |
| RU2119696C1 (ru) * | 1995-08-31 | 1998-09-27 | Валерий Моисеевич Иоффе | Транзистор |
| RU2119698C1 (ru) * | 1995-11-15 | 1998-09-27 | Валерий Моисеевич Иоффе | Варикап |
| US6037650A (en) * | 1995-12-15 | 2000-03-14 | Ioffe; Valery Moiseevich | Variable capacitance semiconductor device |
| RU2117360C1 (ru) * | 1995-12-15 | 1998-08-10 | Валерий Моисеевич Иоффе | Полупроводниковый прибор |
| RU2139599C1 (ru) * | 1996-12-24 | 1999-10-10 | Иоффе Валерий Моисеевич | Полупроводниковый прибор |
-
2001
- 2001-11-26 GB GB0219754A patent/GB2376343A/en not_active Withdrawn
- 2001-11-26 WO PCT/RU2001/000506 patent/WO2002050919A1/ru not_active Ceased
- 2001-11-26 DE DE10195711T patent/DE10195711T1/de not_active Withdrawn
-
2002
- 2002-08-20 US US10/223,827 patent/US20030155658A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| WO2002050919A1 (fr) | 2002-06-27 |
| US20030155658A1 (en) | 2003-08-21 |
| GB0219754D0 (en) | 2002-10-02 |
| GB2376343A (en) | 2002-12-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8139 | Disposal/non-payment of the annual fee |