DE60215291D1 - Halbleiter Speicheranordnung - Google Patents

Halbleiter Speicheranordnung

Info

Publication number: DE60215291D1
Authority: DE; Germany
Prior art keywords: memory device; semiconductor memory; semiconductor; memory
Prior art date: 2001-12-14
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

DE60215291T

Other languages

English (en)

Other versions

DE60215291T2 (de

Inventor

Tadayuki Taura

Shigeru Atsumi

Shuji Maeda

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Toshiba Corp

Original Assignee

Toshiba Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2001-12-14

Filing date

2002-12-13

Publication date

2006-11-23

2002-12-13 Application filed by Toshiba Corp filed Critical Toshiba Corp

2006-11-23 Publication of DE60215291D1 publication Critical patent/DE60215291D1/de

2007-05-10 Application granted granted Critical

2007-05-10 Publication of DE60215291T2 publication Critical patent/DE60215291T2/de

2022-12-14 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
- G11C29/81—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a hierarchical redundancy scheme

DE60215291T 2001-12-14 2002-12-13 Halbleiter Speicheranordnung Expired - Lifetime DE60215291T2 (de)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2001381412A JP2003187591A (ja)	2001-12-14	2001-12-14	半導体記憶装置
JP2001381412		2001-12-14

Publications (2)

Publication Number	Publication Date
DE60215291D1 true DE60215291D1 (de)	2006-11-23
DE60215291T2 DE60215291T2 (de)	2007-05-10

Family

ID=19187333

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE60215291T Expired - Lifetime DE60215291T2 (de)	2001-12-14	2002-12-13	Halbleiter Speicheranordnung

Country Status (6)

Country	Link
US (1)	US6707733B2 (de)
EP (1)	EP1320105B1 (de)
JP (1)	JP2003187591A (de)
KR (1)	KR100470371B1 (de)
CN (1)	CN1267997C (de)
DE (1)	DE60215291T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP4235122B2 (ja) *	2004-02-06	2009-03-11	シャープ株式会社	半導体記憶装置及び半導体記憶装置のテスト方法
US7085180B2 (en) *	2004-02-12	2006-08-01	International Business Machines Corporation	Method and structure for enabling a redundancy allocation during a multi-bank operation
JP4722123B2 (ja) *	2005-02-23	2011-07-13	スパンションエルエルシー	記憶装置の冗長設定方法、および記憶装置
US7447066B2 (en) *	2005-11-08	2008-11-04	Sandisk Corporation	Memory with retargetable memory cell redundancy
WO2009116117A1 (ja) *	2008-03-19	2009-09-24	富士通マイクロエレクトロニクス株式会社	半導体メモリ、システム、半導体メモリの動作方法および半導体メモリの製造方法
KR101600280B1 (ko)	2014-05-28	2016-03-21	주식회사 피델릭스	사용중에 발생되는 결함을 효율적으로 리페어할 수 있는 플래시 메모리 장치 및 그의 리페어 방법
US20160012916A1 (en) *	2014-07-10	2016-01-14	Kabushiki Kaisha Toshiba	Semiconductor memory device and memory system
US9741421B1 (en) *	2016-04-05	2017-08-22	Micron Technology, Inc.	Refresh circuitry
JP7112904B2 (ja) *	2018-07-20	2022-08-04	ラピスセミコンダクタ株式会社	半導体メモリのテスト方法
JP7171286B2 (ja) *	2018-07-20	2022-11-15	ラピスセミコンダクタ株式会社	半導体メモリ装置
JP2024156328A (ja)	2023-04-24	2024-11-06	株式会社ソシオネクスト	メモリ回路

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP3019869B2 (ja) *	1990-10-16	2000-03-13	富士通株式会社	半導体メモリ
JP2001052495A (ja) *	1999-06-03	2001-02-23	Toshiba Corp	半導体メモリ
JP2002015593A (ja) *	2000-06-27	2002-01-18	Toshiba Corp	半導体記憶装置
US6552939B1 (en) *	2001-10-15	2003-04-22	Mitsubishi Denki Kabushiki Kaisha	Semiconductor memory device having disturb test circuit

2001
- 2001-12-14 JP JP2001381412A patent/JP2003187591A/ja active Pending
2002
- 2002-12-13 EP EP02028008A patent/EP1320105B1/de not_active Expired - Lifetime
- 2002-12-13 DE DE60215291T patent/DE60215291T2/de not_active Expired - Lifetime
- 2002-12-13 US US10/318,020 patent/US6707733B2/en not_active Expired - Lifetime
- 2002-12-13 KR KR10-2002-0079761A patent/KR100470371B1/ko not_active Expired - Fee Related
- 2002-12-13 CN CNB021560714A patent/CN1267997C/zh not_active Expired - Fee Related

Also Published As

Publication number	Publication date
US6707733B2 (en)	2004-03-16
CN1438707A (zh)	2003-08-27
CN1267997C (zh)	2006-08-02
KR100470371B1 (ko)	2005-02-11
EP1320105A2 (de)	2003-06-18
JP2003187591A (ja)	2003-07-04
EP1320105A3 (de)	2005-03-09
US20030117867A1 (en)	2003-06-26
KR20030051317A (ko)	2003-06-25
EP1320105B1 (de)	2006-10-11
DE60215291T2 (de)	2007-05-10

Publication	Publication Date	Title
DE60238891D1 (de)	2011-02-24	Halbleiterspeicheranordnung
DE60222354D1 (de)	2007-10-25	Halbleiterspeicheranordnung
DE60239899D1 (de)	2011-06-09	Nichtflüchtige Halbleiterspeicheranordnung
DE60121865D1 (de)	2006-09-14	Nichtflüchtige Halbleiterspeicheranordnung
DE60222947D1 (de)	2007-11-22	Halbleiterspeicher
DE60126383D1 (de)	2007-03-22	Nichtflüchtige Halbleiterspeicheranordnung
DE60331799D1 (de)	2010-05-06	Halbleitervorrichtung
DE50112868D1 (de)	2007-09-27	Halbleiter-chip
DE60122045D1 (de)	2006-09-21	Nichtflüchtige Halbleiterspeicheranordnung
DE60102257D1 (de)	2004-04-15	Halbleiterspeicheranordnung
DE60129073D1 (de)	2007-08-09	Halbleiterspeicheranordnung
DE60213889D1 (de)	2006-09-28	Halbleiteranordnung
DE60227330D1 (de)	2008-08-14	Ferroelektrischer Halbleiterspeicher
DE60032644D1 (de)	2007-02-08	Halbleiter-speicherbaustein
DE60317381D1 (de)	2007-12-20	Halbleiterspeicher
DE60211244D1 (de)	2006-06-14	Halbleiterbauelement
DE60142141D1 (de)	2010-07-01	Halbleiterbauelement
DE60218009D1 (de)	2007-03-22	Halbleiterspeichervorrichtung
DE60336787D1 (de)	2011-06-01	Halbleiterspeicher
DE10191585B8 (de)	2009-07-02	Halbleitervorrichtung
DE60100612D1 (de)	2003-09-25	Synchrone Halbleiterspeichervorrichtung
DE60229712D1 (de)	2008-12-18	Halbleiterspeicher
DE60107174D1 (de)	2004-12-23	Halbleiterspeicheranordnung
DE60141200D1 (de)	2010-03-18	Halbleiterspeichersystem
DE60215291D1 (de)	2006-11-23	Halbleiter Speicheranordnung

Legal Events

Date	Code	Title	Description
2007-10-31	8364	No opposition during term of opposition