CN203203859U - Tetrafluoroethylene silicon wafer etching device - Google Patents
Tetrafluoroethylene silicon wafer etching device Download PDFInfo
- Publication number
- CN203203859U CN203203859U CN201320191654.8U CN201320191654U CN203203859U CN 203203859 U CN203203859 U CN 203203859U CN 201320191654 U CN201320191654 U CN 201320191654U CN 203203859 U CN203203859 U CN 203203859U
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- etching
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- sample
- basket
- tetrafluoroethylene
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- 238000005530 etching Methods 0.000 title claims abstract description 27
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 14
- 239000010703 silicon Substances 0.000 title claims abstract description 14
- -1 Tetrafluoroethylene silicon Chemical compound 0.000 title abstract description 8
- 238000005192 partition Methods 0.000 claims abstract description 14
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 239000007787 solid Substances 0.000 abstract description 6
- 235000012431 wafers Nutrition 0.000 abstract 10
- 238000010200 validation analysis Methods 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 description 15
- 230000007797 corrosion Effects 0.000 description 14
- 238000004140 cleaning Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 239000012498 ultrapure water Substances 0.000 description 6
- 239000002253 acid Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000011090 solid board Substances 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
Description
一、技术领域1. Technical field
本实用新型涉及一种四氟乙烯硅片腐蚀装置，是一种用于化学腐蚀待检测少数载流子寿命，O、C杂质和三五族杂质的单、多晶样片的器具。The utility model relates to a tetrafluoroethylene silicon chip etching device, which is a device for chemically etching single and polycrystalline samples of minority carrier life, O, C impurities and III-V impurities.
二、背景技术2. Background technology
太阳能直拉单晶、铸造多晶、电子直拉单晶和区熔单晶要进行少数载流子寿命，O、C杂质和三五族杂质检测。必要从单、多晶成品上取一厚度1-2mm，大小不超过3*3cm的样片。检测以上项目的样片必须要求表面平整，无杂质污染。达到要求必须要经过化学腐蚀，洗去表面氧化层和附带金属杂质。目前就硅片的形状看，并没有专用的腐蚀器具。Solar Czochralski single crystal, cast polycrystalline, electronic Czochralski single crystal and zone melting single crystal should be tested for minority carrier lifetime, O, C impurity and III-V impurity. It is necessary to take a sample with a thickness of 1-2mm and a size not exceeding 3*3cm from the single or polycrystalline finished product. The samples for testing the above items must have smooth surface and no impurity pollution. To meet the requirements, chemical corrosion must be carried out to wash away the surface oxide layer and accompanying metal impurities. As far as the shape of the silicon wafer is concerned, there is no dedicated etching tool.
腐蚀器具要求材质要和腐蚀用酸不发生反应。目前有的水晶槽符合不与硝酸和氢氟酸反应的特点。但其缺点是造价高且材质精脆，容易碎裂，使用寿命短。腐蚀后的样片要求要尽量短时间暴露在空气中以免造成氧化。但由于样片形状的特殊性现在并没有专门将腐蚀好的样品取出的器具，这样就加大了取出样品的难度。所以根据样品的特点，设计一套样品腐蚀的专用器具是很必要的。Corrosive appliances require materials that do not react with the acid used for corrosion. At present, some crystal tanks meet the characteristics of not reacting with nitric acid and hydrofluoric acid. But its disadvantage is that the cost is high and the material is brittle, easy to break, and the service life is short. The corroded samples are required to be exposed to the air for as short a time as possible to avoid oxidation. However, due to the particularity of the shape of the sample sheet, there is no special device for taking out the corroded sample, which increases the difficulty of taking out the sample. Therefore, according to the characteristics of the sample, it is necessary to design a set of special equipment for sample corrosion.
三、实用新型的内容3. Contents of utility models
本实用新型的目的是提供一种四氟乙烯硅棒、硅片腐蚀装置，其成本低，材质硬度大，使用寿命长，可操作性强。The purpose of the utility model is to provide a tetrafluoroethylene silicon rod and silicon chip etching device, which has low cost, high material hardness, long service life and strong operability.
本实用新型的目的是这样来实现的：一种四氟乙烯硅片腐蚀装置，它包括：2个腐蚀槽和1个样片篮组成，腐蚀槽为长方体结构，底面和四个侧面密封，上面敞开，样片篮也为长方体结构，样片篮的样品放置位置设计成隔断结构，每个隔断空间可以让一对样片竖直的放入，样片篮内的隔断板为实板，底面和面和四个侧面均为成孔板，孔密度10000个/m2，其中一个侧面设计成提手，其提手高度为另一个侧面高度的两倍；所述的样片篮内的隔断板为四氟乙烯材质实板，样片篮的底面和四个侧面均为四氟乙烯材质孔板。样片篮的高度低于腐蚀槽的高度。The purpose of this utility model is achieved in this way: a tetrafluoroethylene silicon wafer etching device, which includes: 2 corrosion tanks and 1 sample basket, the corrosion tank is a cuboid structure, the bottom surface and four sides are sealed, and the top is open , the sample basket is also a cuboid structure. The sample placement position of the sample basket is designed as a partition structure. Each partition space can allow a pair of samples to be placed vertically. The partition board in the sample basket is a solid board. The bottom surface and the surface and four The sides are all hole-forming plates with a hole density of 10,000 pcs/m 2 , and one of the sides is designed as a handle, and the height of the handle is twice the height of the other side; the partition plate in the sample basket is made of tetrafluoroethylene Solid plate, the bottom surface and four sides of the sample basket are all tetrafluoroethylene orifice plates. The height of the coupon basket is lower than the height of the etching tank.
本实用新型经实际使用验证，其具有低损耗，使用寿命长，可操作性强等优点。The utility model has the advantages of low loss, long service life, strong operability and the like through practical use verification.
四、附图说明4. Description of drawings
附图1为本实用新型腐蚀槽的结构示意图。Accompanying
附图2为本实用新型样片篮的结构示意图。Accompanying drawing 2 is the structural representation of the sample basket of the utility model.
其中：1----腐蚀槽、2----样片篮、3----孔板、4----实板。Among them: 1----corrosion tank, 2----sample basket, 3----orifice plate, 4----solid plate.
五、具体实施方式5. Specific implementation
下面结合附图及实施例来对本实用新型作进一步详细描述：The utility model is described in further detail below in conjunction with accompanying drawing and embodiment:
参照附图，本实用新型四氟乙烯硅片腐蚀装置，它包括：二个腐蚀槽1和一个样片篮2组成，二个腐蚀槽1，一个用来化学腐蚀，另一个用来腐蚀之后的高纯水清洗。腐蚀槽1为长方体结构，底面和四个侧面密封，上面敞开，样片篮2也为长方体结构，其用于将腐蚀好的样片从化学腐蚀腐蚀槽中取出再放入高纯水清洗腐蚀槽中，再将高纯水清洗完成后的硅片取出，样片篮2的样品放置位置设计成多个隔断结构，每个隔断空间可以让一对样片竖直的放入，样片篮2内的隔断板为实板4，底面和四个侧面均为成孔板3，孔密度10000个/M2，其中一个侧面设计成提手，其提手高度为另一个侧面高度的两倍。所述的样片篮2内的隔断板为四氟乙烯材质实板4，样片篮2的底面和四个侧面均为四氟乙烯材质孔板3。所述的四氟乙烯硅片腐蚀装置，样片篮2的高度低于腐蚀槽的高度。With reference to the accompanying drawings, the utility model tetrafluoroethylene silicon wafer etching device comprises: two
进行腐蚀操作的时候要在化学腐蚀腐蚀槽中加入混合酸，高纯水清洗腐蚀槽中加入高纯水。将待腐蚀样片放入样片篮2中，再抓住提手将其整个放入加入混合酸的腐蚀槽1中进行腐蚀操作。腐蚀完成后再抓住提手将其整个提出混合酸再放入高纯水清洗腐蚀槽中进行清洗。整个过程的液体都通过样片篮的孔板3结构漏入或者漏出。When performing corrosion operations, add mixed acid to the chemical corrosion tank, and add high-purity water to the high-purity water cleaning tank. Put the sample to be corroded into the sample basket 2, then grasp the handle and put the whole into the
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320191654.8U CN203203859U (en) | 2013-04-03 | 2013-04-03 | Tetrafluoroethylene silicon wafer etching device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320191654.8U CN203203859U (en) | 2013-04-03 | 2013-04-03 | Tetrafluoroethylene silicon wafer etching device |
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| CN203203859U true CN203203859U (en) | 2013-09-18 |
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| CN201320191654.8U Expired - Fee Related CN203203859U (en) | 2013-04-03 | 2013-04-03 | Tetrafluoroethylene silicon wafer etching device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110793986A (en) * | 2019-10-14 | 2020-02-14 | 中国电子科技集团公司第十一研究所 | Method for testing depth of damage layer of InSb wafer |
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2013
- 2013-04-03 CN CN201320191654.8U patent/CN203203859U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110793986A (en) * | 2019-10-14 | 2020-02-14 | 中国电子科技集团公司第十一研究所 | Method for testing depth of damage layer of InSb wafer |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130918 Termination date: 20200403 |