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CN201426176Y - Silicon condenser microphone - Google Patents

Silicon condenser microphone Download PDF

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Publication number
CN201426176Y
CN201426176Y CN2009201322492U CN200920132249U CN201426176Y CN 201426176 Y CN201426176 Y CN 201426176Y CN 2009201322492 U CN2009201322492 U CN 2009201322492U CN 200920132249 U CN200920132249 U CN 200920132249U CN 201426176 Y CN201426176 Y CN 201426176Y
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China
Prior art keywords
back plate
diaphragm
base
adsorption device
condenser microphone
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Expired - Lifetime
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CN2009201322492U
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Chinese (zh)
Inventor
颜毅林
葛舟
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AAC Technologies Holdings Changzhou Co Ltd
AAC Technologies Pte Ltd
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AAC Acoustic Technologies Shenzhen Co Ltd
AAC Acoustic Technologies Changzhou Co Ltd
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Abstract

本实用新型提供了一种硅电容麦克风,包括设有空腔的基底、与基底相连的支撑层,设置在支撑层上的背板和振膜,背板与振膜相对设置,分别与背板和振膜耦合的第一电极和第二电极,背板上设有声孔,所述振膜位于基底和背板之间,在所述背板与振膜之间设置有防吸附装置。该硅电容麦克风降低了制造工艺的难度,批量生产成本低,同时,可以防止背板和振膜吸附在一起。

Figure 200920132249

The utility model provides a silicon capacitor microphone, which comprises a base provided with a cavity, a supporting layer connected with the base, a back plate and a vibrating membrane arranged on the supporting layer, the back plate and the vibrating membrane are arranged oppositely, and respectively connected to the back plate The first electrode and the second electrode coupled with the diaphragm have sound holes on the back plate, the diaphragm is located between the base and the back plate, and an anti-adsorption device is arranged between the back plate and the diaphragm. The silicon capacitor microphone reduces the difficulty of the manufacturing process, and the cost of mass production is low. At the same time, it can prevent the back plate and the diaphragm from being adsorbed together.

Figure 200920132249

Description

硅电容麦克风 Silicon condenser microphone

技术领域 technical field

本实用新型涉及一种硅电容麦克风,尤其涉及一种微机电麦克风。The utility model relates to a silicon capacitor microphone, in particular to a micro-electromechanical microphone.

背景技术 Background technique

随着无线通讯的发展,全球移动电话用户越来越多,用户对移动电话的要求已不仅满足于通话,而且要能够提供高质量的通话效果,尤其是目前移动多媒体技术的发展,移动电话的通话质量更显重要,移动电话的麦克风作为移动电话的语音拾取装置,其设计好坏直接影响通话质量。With the development of wireless communication, there are more and more mobile phone users around the world. The requirements of users for mobile phones are not only satisfied with calls, but also to be able to provide high-quality call effects. Especially the current development of mobile multimedia technology, the mobile phone Call quality is more important. The microphone of a mobile phone is used as a voice pick-up device for the mobile phone, and its design directly affects the call quality.

而目前应用较多且性能较好的麦克风是微电机系统麦克风(Micro-Electro-Mechanical-System Microphone,简称MEMS),相关技术中,都是背板位于振膜与基底之间,这样制造工艺复杂,且批量生产成本大,且振膜与背板容易吸附在一起。因此有必要提供一种新型的硅电容麦克风。Micro-Electro-Mechanical-System Microphone (MEMS for short) is currently the most widely used microphone with better performance. In related technologies, the backplane is located between the diaphragm and the base, so the manufacturing process is complicated. , and the cost of mass production is high, and the diaphragm and the backplane are easily adsorbed together. Therefore, it is necessary to provide a novel silicon condenser microphone.

实用新型内容 Utility model content

本实用新型需解决的技术问题是提供一种降低了制造工艺的难度,批量生产成本低的硅电容麦克风。The technical problem to be solved by the utility model is to provide a silicon capacitor microphone with reduced manufacturing process difficulty and low mass production cost.

根据上述需解决的技术问题,设计了一种硅电容麦克风,包括设有空腔的基底、与基底相连的支撑层,设置在支撑层上的背板和振膜,背板与振膜相对设置,分别与背板和振膜耦合的第一电极和第二电极,背板上设有声孔,所述振膜位于基底和背板之间,在所述背板与振膜之间设置有防吸附装置。According to the above-mentioned technical problems to be solved, a silicon condenser microphone is designed, which includes a base with a cavity, a support layer connected to the base, a back plate and a diaphragm arranged on the support layer, and the back plate and the diaphragm are arranged opposite to each other. , the first electrode and the second electrode respectively coupled with the back plate and the diaphragm, the back plate is provided with an acoustic hole, the diaphragm is located between the base and the back plate, and an anti- adsorption device.

优选的,所述防吸附装置为设置在背板与振膜相对的平面上的第一凸起Preferably, the anti-adsorption device is a first protrusion arranged on the plane of the back plate opposite to the diaphragm

优选的,所述防吸附装置为设置在振膜与背板相对的平面上的第二凸起。Preferably, the anti-adsorption device is a second protrusion arranged on a plane where the diaphragm is opposite to the back plate.

本实用新型的有益效果在于:由于振膜在基底和背板之间,所以降低了工艺难度,减少了工艺步骤,降低了批量生产的成本;同时由于背板上有凸起,防止了背板和振膜吸附在一起。The beneficial effect of the utility model is that: since the diaphragm is between the base and the backboard, the difficulty of the process is reduced, the process steps are reduced, and the cost of mass production is reduced; Adhered to the vibrating membrane.

附图说明 Description of drawings

图1是本实用新型一个实施例的立体分解图;Fig. 1 is the three-dimensional exploded view of an embodiment of the utility model;

图2是实用新型提供一个实施例的剖面图。Fig. 2 is a sectional view of an embodiment of the utility model.

具体实施方式 Detailed ways

下面结合附图和实施方式对本实用新型作进一步说明。Below in conjunction with accompanying drawing and embodiment the utility model is further described.

参见图1和图2,在本实用新型提供的一个实施例中,硅电容麦克风1包括设有空腔16的基底11,与基底11相连的支撑层14,设置在支撑层14上的背板13和振膜12,背板13与振膜12相对设置,背板13上设有声孔131,振膜12位于背板13与基底11之间,硅电容麦克风1还包括与背板13耦合的第一电极(未图示)和与振膜耦合的第二电极(未图示)。Referring to Fig. 1 and Fig. 2, in one embodiment provided by the utility model, the silicon condenser microphone 1 comprises the base 11 that is provided with cavity 16, the supporting layer 14 that is connected with base 11, the back plate that is arranged on the supporting layer 14 13 and the diaphragm 12, the back plate 13 is arranged opposite to the diaphragm 12, the back plate 13 is provided with an acoustic hole 131, the diaphragm 12 is located between the back plate 13 and the base 11, and the silicon condenser microphone 1 also includes a coupling with the back plate 13 A first electrode (not shown) and a second electrode (not shown) coupled with the diaphragm.

其中,背板13与振膜12之间设有防背板13与振膜12吸附在一起的防吸附装置。该防吸附装置可以是设置在背板13与振膜12相对的平面上的都可以凸起132。该第一凸起132可以防止振膜12与背板13吸附在一起。防吸附装置还可以是设置在振膜12与背板相对的平面上的第二凸起(未图示),还可以是分别设置在振膜12或背板13上的凹槽。Wherein, an anti-adsorption device is provided between the back plate 13 and the diaphragm 12 to prevent the back plate 13 and the diaphragm 12 from being adsorbed together. The anti-adsorption device may be a protrusion 132 arranged on the plane of the back plate 13 opposite to the diaphragm 12 . The first protrusion 132 can prevent the vibrating membrane 12 and the back plate 13 from being adsorbed together. The anti-adsorption device can also be a second protrusion (not shown) arranged on the plane opposite to the diaphragm 12 and the back plate, or can be a groove respectively arranged on the diaphragm 12 or the back plate 13 .

振膜12可以为圆形或矩形。也可以是其他形状。The diaphragm 12 can be circular or rectangular. Other shapes are also possible.

无论上述哪种实施方式,振膜12都可以采用多晶硅材料。Regardless of any of the above implementation manners, the diaphragm 12 may be made of polysilicon material.

以上所述的仅是本实用新型的一种实施方式,在此应当指出,对于本领域的普通技术人员来说,在不脱离本实用新型创造构思的前提下,还可以做出改进,但这些均属于本实用新型的保护范围。What is described above is only a kind of embodiment of the present utility model, should point out here, for those of ordinary skill in the art, can also make improvement under the premise of not departing from the inventive concept of the present utility model, but these All belong to the protection scope of the present utility model.

Claims (3)

1、一种硅电容麦克风,包括设有空腔的基底、与基底相连的支撑层,设置在支撑层上的背板和振膜,背板与振膜相对设置,分别与背板和振膜耦合的第一电极和第二电极,背板上设有声孔,其特征在于:所述振膜位于基底和背板之间,在所述背板与振膜之间设置有防吸附装置。1. A silicon capacitor microphone, comprising a base provided with a cavity, a support layer connected to the base, a back plate and a diaphragm arranged on the support layer, the back plate and the diaphragm are relatively arranged, and are respectively connected to the back plate and the diaphragm The coupled first electrode and the second electrode are provided with acoustic holes on the back plate, and are characterized in that: the diaphragm is located between the base and the back plate, and an anti-adsorption device is arranged between the back plate and the diaphragm. 2、根据权利要求1所述的硅电容麦克风,其特征在于:所述防吸附装置为设置在背板与振膜相对的平面上的第一凸起2. The silicon condenser microphone according to claim 1, characterized in that: the anti-adsorption device is a first protrusion arranged on the plane of the back plate opposite to the diaphragm 3、根据权利要求1所述的硅电容麦克风,其特征在于:所述防吸附装置为设置在振膜与背板相对的平面上的第二凸起。3. The silicon condenser microphone according to claim 1, wherein the anti-adsorption device is a second protrusion arranged on a plane where the diaphragm is opposite to the back plate.
CN2009201322492U 2009-05-27 2009-05-27 Silicon condenser microphone Expired - Lifetime CN201426176Y (en)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102036159A (en) * 2010-04-12 2011-04-27 瑞声声学科技(深圳)有限公司 Manufacturing method of silicon-based microphone
CN103402164A (en) * 2013-08-02 2013-11-20 上海集成电路研发中心有限公司 MEMS (micro-electromechanical system) microphone structure and manufacturing method thereof
CN103702268A (en) * 2013-12-31 2014-04-02 瑞声声学科技(深圳)有限公司 Mems microphone
CN103702269A (en) * 2013-12-31 2014-04-02 瑞声声学科技(深圳)有限公司 Mems microphone
CN106341748A (en) * 2015-07-17 2017-01-18 富祐鸿科技股份有限公司 Electrostatic earphone sounding structure
CN110357031A (en) * 2018-04-11 2019-10-22 中芯国际集成电路制造(上海)有限公司 MEMS device and preparation method thereof

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102036159A (en) * 2010-04-12 2011-04-27 瑞声声学科技(深圳)有限公司 Manufacturing method of silicon-based microphone
CN103402164A (en) * 2013-08-02 2013-11-20 上海集成电路研发中心有限公司 MEMS (micro-electromechanical system) microphone structure and manufacturing method thereof
CN103402164B (en) * 2013-08-02 2018-10-16 上海集成电路研发中心有限公司 A kind of MEMS microphone structure and its manufacturing method
CN103702268A (en) * 2013-12-31 2014-04-02 瑞声声学科技(深圳)有限公司 Mems microphone
CN103702269A (en) * 2013-12-31 2014-04-02 瑞声声学科技(深圳)有限公司 Mems microphone
CN103702268B (en) * 2013-12-31 2016-09-14 瑞声声学科技(深圳)有限公司 Mems microphone
CN106341748A (en) * 2015-07-17 2017-01-18 富祐鸿科技股份有限公司 Electrostatic earphone sounding structure
CN110357031A (en) * 2018-04-11 2019-10-22 中芯国际集成电路制造(上海)有限公司 MEMS device and preparation method thereof
CN110357031B (en) * 2018-04-11 2022-01-28 中芯国际集成电路制造(上海)有限公司 MEMS device and preparation method thereof

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Legal Events

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C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20170607

Address after: Singapore Ang Mo Kio 65 Street No. 10 techpoint Building 1 floor, No. 8

Co-patentee after: AAC Acoustic Technologies (Changzhou) Co., Ltd.

Patentee after: AAC Technologies (Singapore) Co., Ltd.

Address before: Wujin Nanxiashu town Jiangsu city Changzhou province 213167

Co-patentee before: AAC Acoustic Technologies (Shenzhen) Co., Ltd.

Patentee before: AAC Acoustic Technologies (Changzhou) Co., Ltd.

CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20100317