CN201426176Y - Silicon condenser microphone - Google Patents
Silicon condenser microphone Download PDFInfo
- Publication number
- CN201426176Y CN201426176Y CN2009201322492U CN200920132249U CN201426176Y CN 201426176 Y CN201426176 Y CN 201426176Y CN 2009201322492 U CN2009201322492 U CN 2009201322492U CN 200920132249 U CN200920132249 U CN 200920132249U CN 201426176 Y CN201426176 Y CN 201426176Y
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- back plate
- diaphragm
- base
- adsorption device
- condenser microphone
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 12
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 12
- 239000010703 silicon Substances 0.000 title claims abstract description 12
- 238000001179 sorption measurement Methods 0.000 claims abstract description 10
- 239000003990 capacitor Substances 0.000 claims abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 239000012528 membrane Substances 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
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- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
Abstract
本实用新型提供了一种硅电容麦克风,包括设有空腔的基底、与基底相连的支撑层,设置在支撑层上的背板和振膜,背板与振膜相对设置,分别与背板和振膜耦合的第一电极和第二电极,背板上设有声孔,所述振膜位于基底和背板之间,在所述背板与振膜之间设置有防吸附装置。该硅电容麦克风降低了制造工艺的难度,批量生产成本低,同时,可以防止背板和振膜吸附在一起。
The utility model provides a silicon capacitor microphone, which comprises a base provided with a cavity, a supporting layer connected with the base, a back plate and a vibrating membrane arranged on the supporting layer, the back plate and the vibrating membrane are arranged oppositely, and respectively connected to the back plate The first electrode and the second electrode coupled with the diaphragm have sound holes on the back plate, the diaphragm is located between the base and the back plate, and an anti-adsorption device is arranged between the back plate and the diaphragm. The silicon capacitor microphone reduces the difficulty of the manufacturing process, and the cost of mass production is low. At the same time, it can prevent the back plate and the diaphragm from being adsorbed together.
Description
技术领域 technical field
本实用新型涉及一种硅电容麦克风,尤其涉及一种微机电麦克风。The utility model relates to a silicon capacitor microphone, in particular to a micro-electromechanical microphone.
背景技术 Background technique
随着无线通讯的发展,全球移动电话用户越来越多,用户对移动电话的要求已不仅满足于通话,而且要能够提供高质量的通话效果,尤其是目前移动多媒体技术的发展,移动电话的通话质量更显重要,移动电话的麦克风作为移动电话的语音拾取装置,其设计好坏直接影响通话质量。With the development of wireless communication, there are more and more mobile phone users around the world. The requirements of users for mobile phones are not only satisfied with calls, but also to be able to provide high-quality call effects. Especially the current development of mobile multimedia technology, the mobile phone Call quality is more important. The microphone of a mobile phone is used as a voice pick-up device for the mobile phone, and its design directly affects the call quality.
而目前应用较多且性能较好的麦克风是微电机系统麦克风(Micro-Electro-Mechanical-System Microphone,简称MEMS),相关技术中,都是背板位于振膜与基底之间,这样制造工艺复杂,且批量生产成本大,且振膜与背板容易吸附在一起。因此有必要提供一种新型的硅电容麦克风。Micro-Electro-Mechanical-System Microphone (MEMS for short) is currently the most widely used microphone with better performance. In related technologies, the backplane is located between the diaphragm and the base, so the manufacturing process is complicated. , and the cost of mass production is high, and the diaphragm and the backplane are easily adsorbed together. Therefore, it is necessary to provide a novel silicon condenser microphone.
实用新型内容 Utility model content
本实用新型需解决的技术问题是提供一种降低了制造工艺的难度,批量生产成本低的硅电容麦克风。The technical problem to be solved by the utility model is to provide a silicon capacitor microphone with reduced manufacturing process difficulty and low mass production cost.
根据上述需解决的技术问题,设计了一种硅电容麦克风,包括设有空腔的基底、与基底相连的支撑层,设置在支撑层上的背板和振膜,背板与振膜相对设置,分别与背板和振膜耦合的第一电极和第二电极,背板上设有声孔,所述振膜位于基底和背板之间,在所述背板与振膜之间设置有防吸附装置。According to the above-mentioned technical problems to be solved, a silicon condenser microphone is designed, which includes a base with a cavity, a support layer connected to the base, a back plate and a diaphragm arranged on the support layer, and the back plate and the diaphragm are arranged opposite to each other. , the first electrode and the second electrode respectively coupled with the back plate and the diaphragm, the back plate is provided with an acoustic hole, the diaphragm is located between the base and the back plate, and an anti- adsorption device.
优选的,所述防吸附装置为设置在背板与振膜相对的平面上的第一凸起Preferably, the anti-adsorption device is a first protrusion arranged on the plane of the back plate opposite to the diaphragm
优选的,所述防吸附装置为设置在振膜与背板相对的平面上的第二凸起。Preferably, the anti-adsorption device is a second protrusion arranged on a plane where the diaphragm is opposite to the back plate.
本实用新型的有益效果在于:由于振膜在基底和背板之间,所以降低了工艺难度,减少了工艺步骤,降低了批量生产的成本;同时由于背板上有凸起,防止了背板和振膜吸附在一起。The beneficial effect of the utility model is that: since the diaphragm is between the base and the backboard, the difficulty of the process is reduced, the process steps are reduced, and the cost of mass production is reduced; Adhered to the vibrating membrane.
附图说明 Description of drawings
图1是本实用新型一个实施例的立体分解图;Fig. 1 is the three-dimensional exploded view of an embodiment of the utility model;
图2是实用新型提供一个实施例的剖面图。Fig. 2 is a sectional view of an embodiment of the utility model.
具体实施方式 Detailed ways
下面结合附图和实施方式对本实用新型作进一步说明。Below in conjunction with accompanying drawing and embodiment the utility model is further described.
参见图1和图2,在本实用新型提供的一个实施例中,硅电容麦克风1包括设有空腔16的基底11,与基底11相连的支撑层14,设置在支撑层14上的背板13和振膜12,背板13与振膜12相对设置,背板13上设有声孔131,振膜12位于背板13与基底11之间,硅电容麦克风1还包括与背板13耦合的第一电极(未图示)和与振膜耦合的第二电极(未图示)。Referring to Fig. 1 and Fig. 2, in one embodiment provided by the utility model, the
其中,背板13与振膜12之间设有防背板13与振膜12吸附在一起的防吸附装置。该防吸附装置可以是设置在背板13与振膜12相对的平面上的都可以凸起132。该第一凸起132可以防止振膜12与背板13吸附在一起。防吸附装置还可以是设置在振膜12与背板相对的平面上的第二凸起(未图示),还可以是分别设置在振膜12或背板13上的凹槽。Wherein, an anti-adsorption device is provided between the
振膜12可以为圆形或矩形。也可以是其他形状。The
无论上述哪种实施方式,振膜12都可以采用多晶硅材料。Regardless of any of the above implementation manners, the
以上所述的仅是本实用新型的一种实施方式,在此应当指出,对于本领域的普通技术人员来说,在不脱离本实用新型创造构思的前提下,还可以做出改进,但这些均属于本实用新型的保护范围。What is described above is only a kind of embodiment of the present utility model, should point out here, for those of ordinary skill in the art, can also make improvement under the premise of not departing from the inventive concept of the present utility model, but these All belong to the protection scope of the present utility model.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009201322492U CN201426176Y (en) | 2009-05-27 | 2009-05-27 | Silicon condenser microphone |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009201322492U CN201426176Y (en) | 2009-05-27 | 2009-05-27 | Silicon condenser microphone |
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| CN201426176Y true CN201426176Y (en) | 2010-03-17 |
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| CN2009201322492U Expired - Lifetime CN201426176Y (en) | 2009-05-27 | 2009-05-27 | Silicon condenser microphone |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102036159A (en) * | 2010-04-12 | 2011-04-27 | 瑞声声学科技(深圳)有限公司 | Manufacturing method of silicon-based microphone |
| CN103402164A (en) * | 2013-08-02 | 2013-11-20 | 上海集成电路研发中心有限公司 | MEMS (micro-electromechanical system) microphone structure and manufacturing method thereof |
| CN103702268A (en) * | 2013-12-31 | 2014-04-02 | 瑞声声学科技(深圳)有限公司 | Mems microphone |
| CN103702269A (en) * | 2013-12-31 | 2014-04-02 | 瑞声声学科技(深圳)有限公司 | Mems microphone |
| CN106341748A (en) * | 2015-07-17 | 2017-01-18 | 富祐鸿科技股份有限公司 | Electrostatic earphone sounding structure |
| CN110357031A (en) * | 2018-04-11 | 2019-10-22 | 中芯国际集成电路制造(上海)有限公司 | MEMS device and preparation method thereof |
-
2009
- 2009-05-27 CN CN2009201322492U patent/CN201426176Y/en not_active Expired - Lifetime
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102036159A (en) * | 2010-04-12 | 2011-04-27 | 瑞声声学科技(深圳)有限公司 | Manufacturing method of silicon-based microphone |
| CN103402164A (en) * | 2013-08-02 | 2013-11-20 | 上海集成电路研发中心有限公司 | MEMS (micro-electromechanical system) microphone structure and manufacturing method thereof |
| CN103402164B (en) * | 2013-08-02 | 2018-10-16 | 上海集成电路研发中心有限公司 | A kind of MEMS microphone structure and its manufacturing method |
| CN103702268A (en) * | 2013-12-31 | 2014-04-02 | 瑞声声学科技(深圳)有限公司 | Mems microphone |
| CN103702269A (en) * | 2013-12-31 | 2014-04-02 | 瑞声声学科技(深圳)有限公司 | Mems microphone |
| CN103702268B (en) * | 2013-12-31 | 2016-09-14 | 瑞声声学科技(深圳)有限公司 | Mems microphone |
| CN106341748A (en) * | 2015-07-17 | 2017-01-18 | 富祐鸿科技股份有限公司 | Electrostatic earphone sounding structure |
| CN110357031A (en) * | 2018-04-11 | 2019-10-22 | 中芯国际集成电路制造(上海)有限公司 | MEMS device and preparation method thereof |
| CN110357031B (en) * | 2018-04-11 | 2022-01-28 | 中芯国际集成电路制造(上海)有限公司 | MEMS device and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20170607 Address after: Singapore Ang Mo Kio 65 Street No. 10 techpoint Building 1 floor, No. 8 Co-patentee after: AAC Acoustic Technologies (Changzhou) Co., Ltd. Patentee after: AAC Technologies (Singapore) Co., Ltd. Address before: Wujin Nanxiashu town Jiangsu city Changzhou province 213167 Co-patentee before: AAC Acoustic Technologies (Shenzhen) Co., Ltd. Patentee before: AAC Acoustic Technologies (Changzhou) Co., Ltd. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20100317 |