CN201345734Y - Silica-based microphone - Google Patents
Silica-based microphone Download PDFInfo
- Publication number
- CN201345734Y CN201345734Y CNU2008202357263U CN200820235726U CN201345734Y CN 201345734 Y CN201345734 Y CN 201345734Y CN U2008202357263 U CNU2008202357263 U CN U2008202357263U CN 200820235726 U CN200820235726 U CN 200820235726U CN 201345734 Y CN201345734 Y CN 201345734Y
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- back plate
- vibrating body
- main body
- silica
- based microphone
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims 8
- 239000000377 silicon dioxide Substances 0.000 title claims 4
- 239000000758 substrate Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 11
- 229910052710 silicon Inorganic materials 0.000 abstract description 11
- 239000010703 silicon Substances 0.000 abstract description 11
- 239000012528 membrane Substances 0.000 abstract description 4
- 230000035945 sensitivity Effects 0.000 abstract description 4
- 239000003990 capacitor Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
Abstract
本实用新型提供了一种硅基麦克风,包括内部设有空腔的基底、收容于基底空腔内的背极板、振膜,所述振膜包括振动主体和与振动主体相连且位于振动主体中央区域的连接部,所述连接部与背极板相连,所述振动主体与背极板相对。与现有技术相比,本实用新型振膜的振动主体周缘未被固定,而是通过位于振动主体中央区域的连接部固定于背极板上,振动主体可相对背极板上下振动,这种结构设计独特,所得产品的灵敏度也很高。
The utility model provides a silicon-based microphone, which comprises a base with a cavity inside, a back plate accommodated in the cavity of the base, and a vibrating membrane. The vibrating membrane includes a vibrating body and a The connection part in the central area is connected to the back plate, and the vibrating body is opposite to the back plate. Compared with the prior art, the periphery of the vibrating body of the vibrating membrane of the utility model is not fixed, but is fixed on the back plate through the connection part located in the central area of the vibrating body, and the vibrating body can vibrate up and down relative to the back plate. The structure design is unique, and the sensitivity of the obtained product is also high.
Description
【技术领域】 【Technical field】
本实用新型涉及一种麦克风,尤其涉及一种MEMS硅基麦克风。The utility model relates to a microphone, in particular to a MEMS silicon-based microphone.
【背景技术】 【Background technique】
随着无线通讯的发展,全球移动电话用户越来越多,用户对移动电话的要求已不仅满足于通话,而且要能够提供高质量的通话效果,尤其是目前移动多媒体技术的发展,移动电话的通话质量更显重要,移动电话的麦克风作为移动电话的语音拾取装置,其设计好坏直接影响通话质量。With the development of wireless communication, there are more and more mobile phone users around the world. The requirements of users for mobile phones are not only satisfied with calls, but also to be able to provide high-quality call effects. Especially the current development of mobile multimedia technology, the mobile phone Call quality is more important. The microphone of a mobile phone is used as a voice pick-up device for the mobile phone, and its design directly affects the call quality.
目前应用较多且性能较好的麦克风是微电机系统麦克风(Micro-Electro-Mechanical-System Microphone,简称MEMS),其封装体积比传统的驻极体麦克风小。MEMS麦克风是基于硅基半导体材料制成,故又称硅基麦克风。近几年,硅基MEMS麦克风已取得了很大的进步。Micro-Electro-Mechanical-System Microphone (MEMS for short) is currently the most widely used microphone with better performance, and its packaging volume is smaller than that of traditional electret microphones. MEMS microphones are made of silicon-based semiconductor materials, so they are also called silicon-based microphones. Silicon-based MEMS microphones have come a long way in recent years.
如图1所示,为现有常见的MEMS硅基麦克风1的剖视示意图。此类麦克风包括内部设有空腔的基底10、实现电容效应的背极板11和振膜12。振膜的周缘被固定,与背极板相对且与背极板间隔一定距离。当声音气流传递到振膜上时,振膜上下振动以产生位移,改变电容器的电容量,电容量的改变使电容器的输出端产生相应的交变电场,形成了与声波信号对应的电信号,从而完成声电转换的功能。As shown in FIG. 1 , it is a schematic cross-sectional view of a conventional MEMS silicon-based microphone 1 . This type of microphone includes a
【实用新型内容】 【Content of utility model】
本实用新型需解决的技术问题是提供一种结构设计独特、灵敏度高的硅基麦克风。The technical problem to be solved by the utility model is to provide a silicon-based microphone with unique structural design and high sensitivity.
根据上述需解决的技术问题,设计了一种硅基麦克风,内部设有空腔的基底、收容于基底空腔内的背极板、振膜,所述振膜包括振动主体和与振动主体相连且位于振动主体中央区域的连接部,所述连接部与背极板相连,所述振动主体与背极板相对。According to the above-mentioned technical problems to be solved, a silicon-based microphone is designed, which has a base with a cavity inside, a back plate and a diaphragm accommodated in the cavity of the base, and the diaphragm includes a vibrating body and a vibrating body connected to the vibrating body. And the connecting part located in the central area of the vibrating body, the connecting part is connected with the back plate, and the vibrating main body is opposite to the back plate.
作为本实用新型进一步改进,所述振动主体为扁圆柱形,连接部为由振动主体中央区域延伸的长圆柱形。As a further improvement of the utility model, the vibrating body is in the shape of a flat cylinder, and the connection part is in the shape of a long cylinder extending from the central area of the vibrating body.
作为本实用新型进一步改进,所述振膜的横截面为T形。As a further improvement of the utility model, the cross-section of the diaphragm is T-shaped.
与现有技术相比,本实用新型振膜振动主体周缘未被固定,而是通过位于振动主体中央区域的连接部固定于背极板上,振动主体与背极板相对且可相对背极板上下振动。此种结构设计独特,所得产品的灵敏度也很高。Compared with the prior art, the periphery of the diaphragm vibrating body of the utility model is not fixed, but is fixed on the back plate through the connection part located in the central area of the vibrating body. The vibrating body is opposite to the back plate and can be opposite to the back plate. Vibrate up and down. This kind of structural design is unique, and the sensitivity of the obtained product is also high.
【附图说明】 【Description of drawings】
图1是现有常见MEMS硅基麦克风的剖视示意图;FIG. 1 is a schematic cross-sectional view of an existing common MEMS silicon-based microphone;
图2是本实用新型硅基麦克风的立体示意图;Fig. 2 is the three-dimensional schematic diagram of silicon-based microphone of the present invention;
图3是图2中B-B方向的剖视示意图。Fig. 3 is a schematic cross-sectional view along the B-B direction in Fig. 2 .
【具体实施方式】 【Detailed ways】
下面结合附图和实施方式对本实用新型作进一步说明。Below in conjunction with accompanying drawing and embodiment the utility model is further described.
如图2和图3所示,为本实用新型实施方式硅基麦克风2,包括基底20、背极板21、振膜22。基底20内设有空腔200,背极板21收容于空腔200内。在背极板21上还设有通气孔210。As shown in FIG. 2 and FIG. 3 , it is a silicon-based
振膜22的横截面为T形,包括扁圆柱形的振动主体220和与振动主体相连的连接部221。连接部221为由振动主体中央区域延伸的长圆柱形。振动主体220通过连接部221与背板板21相连而与背极板21相对。振动主体可相对背极板上下振动并与背极板形成电容效应。当声音气流传递到振膜上时,振动主体上下振动以产生位移,改变电容器的电容量,电容量的改变使电容器的输出端产生相应的交变电场,形成与声波信号对应的电信号,从而完成声电转换的功能。The
本实用新型振膜的振动主体周缘未被固定,而是通过位于振动主体中央区域的连接部固定于背极板上,与现有技术相比,此结构设计独特,所得产品的灵敏度也很高。The periphery of the vibrating body of the vibrating membrane of the utility model is not fixed, but is fixed on the back plate through the connecting part located in the central area of the vibrating main body. Compared with the prior art, this structural design is unique, and the sensitivity of the obtained product is also high .
以上所述的仅是本实用新型的实施方式,在此应当指出,对于本领域的普通技术人员来说,在不脱离本实用新型创造构思的前提下,还可以做出改进,但这些均属于本实用新型的保护范围。What has been described above is only the embodiment of the utility model, and it should be pointed out that for those of ordinary skill in the art, improvements can also be made without departing from the inventive concept of the utility model, but these all belong to Protection scope of the present utility model.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008202357263U CN201345734Y (en) | 2008-12-26 | 2008-12-26 | Silica-based microphone |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008202357263U CN201345734Y (en) | 2008-12-26 | 2008-12-26 | Silica-based microphone |
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| Publication Number | Publication Date |
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| CN201345734Y true CN201345734Y (en) | 2009-11-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNU2008202357263U Expired - Lifetime CN201345734Y (en) | 2008-12-26 | 2008-12-26 | Silica-based microphone |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011144570A1 (en) * | 2010-05-20 | 2011-11-24 | Epcos Ag | Electric component having a shallow physical shape, and method of manufacture |
| CN104581549A (en) * | 2013-10-16 | 2015-04-29 | 美律电子(深圳)有限公司 | Sonic sensor with high sensitivity |
-
2008
- 2008-12-26 CN CNU2008202357263U patent/CN201345734Y/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011144570A1 (en) * | 2010-05-20 | 2011-11-24 | Epcos Ag | Electric component having a shallow physical shape, and method of manufacture |
| CN102893632A (en) * | 2010-05-20 | 2013-01-23 | 埃普科斯股份有限公司 | Electric component having shallow physical shape, and method of manufacture |
| US9084366B2 (en) | 2010-05-20 | 2015-07-14 | Epcos Ag | Electric component having a shallow physical shape, and method of manufacture |
| CN102893632B (en) * | 2010-05-20 | 2016-11-02 | 埃普科斯股份有限公司 | There is electric device and the manufacture method of planar design |
| CN104581549A (en) * | 2013-10-16 | 2015-04-29 | 美律电子(深圳)有限公司 | Sonic sensor with high sensitivity |
| CN104581549B (en) * | 2013-10-16 | 2018-05-29 | 美律电子(深圳)有限公司 | High sensitivity sonic sensor |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20170526 Address after: Singapore Ang Mo Kio 65 Street No. 10 techpoint Building 1 floor, No. 8 Co-patentee after: AAC Acoustic Technologies (Changzhou) Co., Ltd. Patentee after: AAC Technologies (Singapore) Co., Ltd. Address before: 518057 Nanshan District province high tech Industrial Park, Shenzhen, North West New Road, No. 18 Co-patentee before: AAC Acoustic Technologies (Changzhou) Co., Ltd. Patentee before: AAC Acoustic Technologies (Shenzhen) Co., Ltd. |
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| CX01 | Expiry of patent term |
Granted publication date: 20091111 |
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| CX01 | Expiry of patent term |