CN108603303A - Surface treatment copper foil and the copper-clad laminated board being fabricated using it - Google Patents
Surface treatment copper foil and the copper-clad laminated board being fabricated using it Download PDFInfo
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- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
- B32B3/26—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer
- B32B3/30—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer characterised by a layer formed with recesses or projections, e.g. hollows, grooves, protuberances, ribs
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- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/60—Electroplating characterised by the structure or texture of the layers
- C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
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- B32—LAYERED PRODUCTS
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- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/06—Wires; Strips; Foils
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/06—Wires; Strips; Foils
- C25D7/0614—Strips or foils
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/389—Improvement of the adhesion between the insulating substrate and the metal by the use of a coupling agent, e.g. silane
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2255/00—Coating on the layer surface
- B32B2255/06—Coating on the layer surface on metal layer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
- B32B2307/206—Insulating
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C2222/00—Aspects relating to chemical surface treatment of metallic material by reaction of the surface with a reactive medium
- C23C2222/20—Use of solutions containing silanes
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- Organic Chemistry (AREA)
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- Electrochemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
Description
技术领域technical field
本发明涉及一种确保与绝缘基板的充分的密接性且兼具高度的回流耐热性与传输特性的表面处理铜箔以及使用其制造而成的覆铜层叠板。The present invention relates to a surface-treated copper foil that ensures sufficient adhesion to an insulating substrate and has both high reflow heat resistance and transmission characteristics, and a copper-clad laminate manufactured using the same.
背景技术Background technique
近年来,伴随着电脑及信息通信设备的高性能化及高功能化以及网络化的发展,存在信号日益高频化以对大容量的信息进行高速传输处理的倾向。此种信息通信设备使用覆铜层叠板。覆铜层叠板通过对绝缘基板(树脂基板)与铜箔进行加热及加压来制作。一般而言,构成支持高频的覆铜层叠板的绝缘基板必须使用介电特性优异的树脂,然而相对介电常数及介电损耗角正切低的树脂存在以下倾向:有助于与铜箔粘接的极性高的官能团少而使与铜箔的粘接特性下降。In recent years, with the improvement of performance and functionality of computers and information communication equipment, and the development of networking, there is a tendency to increase the frequency of signals to perform high-speed transmission processing of large-capacity information. Such information and communication equipment uses copper-clad laminated boards. Copper-clad laminates are produced by heating and pressing an insulating substrate (resin substrate) and copper foil. In general, resins with excellent dielectric properties must be used for insulating substrates constituting high-frequency copper-clad laminates. However, resins with low relative permittivity and dielectric loss tangent tend to facilitate adhesion to copper foil. There are few functional groups with high polarity, so that the adhesive properties with copper foil are reduced.
另外,对作为支持高频的覆铜层叠板所使用的导电层的铜箔,期望尽可能减小其表面粗糙度。要求此种铜箔的低轮廓化的原因在于,伴随着高频化,电流会集中流动于铜箔的表面部分,从而存在铜箔的表面粗糙度越大传输损耗越大的倾向。In addition, it is desired that the surface roughness of the copper foil used as a conductive layer used in a copper-clad laminate supporting high frequencies be as small as possible. The reason why such a lower profile of the copper foil is required is that the current tends to flow concentratedly on the surface of the copper foil as the frequency becomes higher, and the larger the surface roughness of the copper foil, the larger the transmission loss tends to be.
为了改善构成覆铜层叠板的铜箔对绝缘基板的密接性,一般在铜箔基体上形成具有微细的凹凸表面(以下简称为凹凸表面)的粗面化层,所述凹凸表面利用粗化粒子的电析来形成,从而通过物理效应(锚固效应)来提高密接力。若增大凹凸表面的高低差(表面粗糙度)则密接力会提高,但传输损耗会由于所述原因而增加。尽管如此,现状中仍优先使铜箔基体上形成的粗面化层的表面为凹凸表面以确保密接力,并容许因形成凹凸表面而导致的一定程度的传输损耗的下降。然而,最近正在进行支持频率为20GHz以上的下一代高频电路基板的开发,从而期望该基板相较于以往能更进一步降低传输损耗。In order to improve the adhesion of the copper foil constituting the copper-clad laminate to the insulating substrate, a roughened layer having a fine uneven surface (hereinafter simply referred to as the uneven surface) is generally formed on the copper foil substrate. It is formed by electrolysis, so as to improve the adhesion force through physical effects (anchor effect). If the height difference (surface roughness) of the uneven surface is increased, the adhesion force will be improved, but the transmission loss will increase for the above reasons. However, in the current situation, it is still preferable to make the surface of the roughened layer formed on the copper foil substrate into a rough surface to ensure adhesion, and to allow a certain degree of reduction in transmission loss due to the formation of the rough surface. However, the development of next-generation high-frequency circuit boards supporting frequencies above 20 GHz is currently underway, and it is expected that this board can further reduce transmission loss compared to conventional ones.
一般而言,为了降低传输损耗,理想的是使用例如减小粗面化层的表面凹凸的高低差(表面粗糙度)的表面处理铜箔或未进行粗面化处理的未粗化的平滑铜箔。另外,为了确保此种表面粗糙度小的铜箔的密接性,理想的是在铜箔与绝缘基板之间形成硅烷偶联剂层,该偶联剂层形成化学键。In general, in order to reduce transmission loss, it is desirable to use, for example, a surface-treated copper foil that reduces the unevenness (surface roughness) of the surface of the roughened layer or unroughened smooth copper foil that has not been roughened. foil. Moreover, in order to ensure the adhesiveness of the copper foil with such a small surface roughness, it is desirable to form a silane coupling agent layer between copper foil and an insulating substrate, and this coupling agent layer forms a chemical bond.
在使用所述铜箔来制造高频电路基板时,除所述的密接性及传输特性以外,最近需要进一步考虑回流耐热性。此处,所谓的“回流耐热性”是在制造高频电路基板时所进行的焊料回流工序中的耐热性。所谓的焊料回流工序是在使糊状的焊料附着于电路基板的配线与电子零件的接点的状态下,通过回流炉进行加热而软钎焊接合的方法。近年来,就减轻环境负荷的观点而言,用于电路基板的电接合部的焊料正在向无铅(Pb)化发展。与以往的焊料相比,无铅焊料的熔点高,在应用于焊料回流工序的情形时,电路基板会暴露于例如260℃左右的高温,因此与使用以往的焊料的情形相比,需要具备高度的回流耐热性。因此,特别是针对用于此种用途的铜箔,使其确保与绝缘基板的充分的密接性且兼具高度的回流耐热性与传输特性已成为新课题。When manufacturing a high-frequency circuit board using such copper foil, reflow heat resistance needs to be further considered recently in addition to the above-mentioned adhesiveness and transmission characteristics. Here, the "reflow heat resistance" refers to heat resistance in a solder reflow process performed when manufacturing a high-frequency circuit board. The so-called solder reflow process is a method of soldering and joining paste solder by heating in a reflow furnace while adhering to the contacts of the wiring of the circuit board and the electronic component. In recent years, lead (Pb)-free solders used for electrical joints of circuit boards have been developed from the viewpoint of reducing environmental load. Compared with conventional solders, lead-free solders have a higher melting point. When applied to the solder reflow process, the circuit board is exposed to high temperatures such as about 260°C. Therefore, it is necessary to have a higher reflow heat resistance. Therefore, it has become a new subject to ensure sufficient adhesion to an insulating substrate and to have both high reflow heat resistance and transmission characteristics, especially for copper foils used in such applications.
本申请人在例如专利文献1中提出了一种方法,其使用氢氧化钾溶液在热塑性树脂膜表面形成微细的凹凸,之后依序进行无电镀铜与电镀铜而形成具有微细的凹凸的铜层,所述微细的凹凸起因于热塑性树脂膜的表面形状,由此来制作作为传输特性与密接性优异的电路基板的覆盖有金属的层叠体。然而,本申请人之后进一步反复研究专利文献1中记载的发明,结果得知:有时无法充分地获得回流耐热性,因而有待改善。The present applicant proposed a method in, for example, Patent Document 1, which uses potassium hydroxide solution to form fine unevenness on the surface of a thermoplastic resin film, and then sequentially performs electroless copper plating and electroplating copper to form a copper layer with fine unevenness. , the fine unevenness is due to the surface shape of the thermoplastic resin film, thereby producing a metal-covered laminate that is a circuit board excellent in transmission characteristics and adhesiveness. However, as a result of the present applicant's repeated studies on the invention described in Patent Document 1, it has been found that the reflow heat resistance may not be sufficiently obtained, and improvement is required.
另外,本申请人也在专利文献2中提出了一种表面处理铜箔,其在电解铜箔的至少一面具有由粗化粒子所形成的突起物的高度为1至5μm的粗化处理面。专利文献2中记载的表面处理铜箔的突起物的高度较高,而且并未打算改善回流耐热性,硅烷偶联层的形成是任意的,所以虽然对液晶聚合物膜具有优异的密接性,但是通过使粗化粒子附着而使表面粗糙度增加,因此具有传输损耗会增大的倾向,从而应用于近年来支持20GHz以上的高频的绝缘基板时有所不足,而且有时也无法充分获得回流耐热性,因而有待改善。In addition, the present applicant also proposed in Patent Document 2 a surface-treated copper foil having, on at least one surface of an electrolytic copper foil, a roughened surface having a protrusion formed of roughened particles with a height of 1 to 5 μm. The surface-treated copper foil described in Patent Document 2 has high protrusions, does not intend to improve reflow heat resistance, and forms a silane coupling layer arbitrarily, so it has excellent adhesion to liquid crystal polymer films. , but the surface roughness is increased by attaching roughening particles, so the transmission loss tends to increase, which is insufficient when applied to insulating substrates that support high frequencies above 20 GHz in recent years, and sometimes cannot fully obtain Reflow heat resistance, thus needs to be improved.
而且,在专利文献3中公开了一种覆铜层叠板用表面处理铜箔,其通过采用铜-钴-镍合金电镀的粗化处理来形成粗化粒子。在此种铜箔应用于高频用电路基板的情形时,铜箔与树脂的接触面积增加,故能确保良好的密接性,但是铜箔的表面积变得过大,因此预见传输特性会变差,此外丝毫未考虑回流耐热性。Furthermore, Patent Document 3 discloses a surface-treated copper foil for copper-clad laminates in which roughened particles are formed by roughening treatment by copper-cobalt-nickel alloy plating. When such copper foil is applied to a high-frequency circuit board, the contact area between the copper foil and the resin increases, so that good adhesion can be ensured, but the surface area of the copper foil becomes too large, so the transmission characteristics are expected to deteriorate , In addition, reflow heat resistance is not considered at all.
在专利文献4中公开了一种铜箔,其通过铜的粗化处理来提高传输特性、密接性以及耐热性。在使用此种铜箔的情形时能期待传输特性的提高,但在回流试验中的260℃左右的加热条件下,在铜箔与绝缘基板(树脂基板)之间会发生脱层剥离,从而无法发挥出令人满意的特性。Patent Document 4 discloses a copper foil in which transmission characteristics, adhesiveness, and heat resistance are improved by roughening treatment of copper. When such copper foil is used, it can be expected that the transmission characteristics will be improved. However, under the heating conditions of about 260°C in the reflow test, delamination and peeling between the copper foil and the insulating substrate (resin substrate) will occur, making it impossible to exert satisfactory characteristics.
在专利文献5中,针对带有极薄底料树脂层的表面处理铜箔,为了提高树脂与铜箔的密接性而实施硅烷处理,从而实现常态下的密接性的改善。然而,在实施此种硅烷处理的情形时,一般会存在硅烷的均匀处理不充分的倾向而对耐热回流性产生不良影响。In Patent Document 5, silane treatment is performed on a surface-treated copper foil with an extremely thin primer resin layer in order to improve the adhesiveness between the resin and the copper foil, thereby improving the adhesiveness under normal conditions. However, when such a silane treatment is performed, generally, the uniform treatment of silane tends to be insufficient, which adversely affects the heat reflow resistance.
在专利文献6中公开了一种电磁波屏蔽用铜箔,其在铜箔的一面设置由微细粗化粒子构成的黑色或褐色处理层。作为形成微细粗化粒子的实施例,例如通过添加有柠檬酸三钠等螯合剂的浴来实施电解。在将本实施例的铜箔用于高频基板的情形时,虽然密接性等优异,但由于表面的微细凹凸的影响而使传输损耗特性降低,进而导致所需特性不充分。Patent Document 6 discloses a copper foil for shielding electromagnetic waves in which a black or brown treated layer made of fine roughened particles is provided on one surface of the copper foil. As an example of forming fine roughened particles, for example, electrolysis is performed in a bath to which a chelating agent such as trisodium citrate is added. When the copper foil of this example is used for a high-frequency substrate, although the adhesion and the like are excellent, the transmission loss characteristics are lowered due to the influence of fine unevenness on the surface, resulting in insufficient required characteristics.
在专利文献7中公开了一种铜箔,其通过向铜箔的至少一面施以铜的微细粗化粒子处理层而成。在实施例中,通过向粗化电镀浴添加作为螯合剂的二亚乙基三胺五乙酸五钠而使粗化粒子变得微细。然而,在将本实施例的铜箔用于高频基板的情形时,会由于表面的微细凹凸的影响而使传输损耗特性降低,进而导致所需特性不充分。Patent Document 7 discloses a copper foil obtained by applying a copper fine roughened particle treatment layer to at least one surface of the copper foil. In the examples, the roughened particles were made finer by adding pentasodium diethylenetriaminepentaacetate as a chelating agent to the roughening plating bath. However, when the copper foil of the present example is used for a high-frequency substrate, the transmission loss characteristics are lowered due to the influence of the fine unevenness on the surface, resulting in insufficient required characteristics.
现有技术文献prior art literature
专利文献patent documents
专利文献1:日本专利特开2013-158935号公报Patent Document 1: Japanese Patent Laid-Open No. 2013-158935
专利文献2:日本专利第4833556号公报Patent Document 2: Japanese Patent No. 4833556
专利文献3:日本专利特开2013-147688号公报Patent Document 3: Japanese Patent Laid-Open No. 2013-147688
专利文献4:国际公开2011/090175号小册子Patent Document 4: International Publication No. 2011/090175 Pamphlet
专利文献5:国际公开2006/134868号小册子Patent Document 5: International Publication No. 2006/134868 Pamphlet
专利文献6:日本专利特开2006-278881号公报Patent Document 6: Japanese Patent Laid-Open No. 2006-278881
专利文献7:日本专利特开2007-332418号公报Patent Document 7: Japanese Patent Laid-Open No. 2007-332418
发明内容Contents of the invention
本发明应对为高速传输处理大容量信息而高频化的信息通信设备的高性能化及高功能化,其目的在于提供一种确保与绝缘基板的充分的密接性且兼具高度的回流耐热性与传输特性的表面处理铜箔以及使用其制造而成的覆铜层叠板,所述绝缘基板的相对介电常数和介电损耗角正切低,从而介电特性优异。The present invention responds to high-performance and high-functioning information communication equipment that requires high frequency for high-speed transmission and processing of large-capacity information. The surface-treated copper foil with high performance and transmission characteristics and the copper-clad laminate manufactured using it, the relative permittivity and dielectric loss tangent of the insulating substrate are low, so that the dielectric characteristics are excellent.
本发明人等反复努力研究,结果发现:在与铜箔基体面正交的剖面,沿所述粗面化层的凹凸表面而测定的沿面长度Da相对于沿所述铜箔基体面而测定的沿面长度Db之比Da/Db(以下也称为“线长比”)对回流耐热性影响很大。另外,本发明人等也发现:在利用粗化粒子的电析而在铜箔基体上形成具有凹凸表面的粗面化层的粗面化处理时,通过控制凹凸表面的凹凸的平均高低差H与直接地或介隔中间层地形成于粗面化层上的硅烷偶联剂层的硅烷附着量,能够获得在回流耐热性、密接性以及传输特性方面均显示出优异的特性的铜箔,从而完成本发明。The inventors of the present invention have repeatedly studied hard and found that: in a section perpendicular to the surface of the copper foil substrate, the creepage length Da measured along the uneven surface of the roughened layer is larger than that measured along the surface of the copper foil substrate. The ratio Da/Db (hereinafter also referred to as "line length ratio") of the creeping length Db greatly affects the reflow heat resistance. In addition, the inventors of the present invention have also found that during the roughening treatment of forming a roughened layer having an uneven surface on a copper foil substrate by electrolysis of roughened particles, by controlling the average height difference H of the uneven surface The amount of silane attached to the silane coupling agent layer formed on the roughened layer directly or through an intermediate layer can obtain a copper foil that exhibits excellent characteristics in terms of reflow heat resistance, adhesion, and transmission characteristics. , thus completing the present invention.
即,本发明的主旨构成如下。That is, the gist of the present invention is constituted as follows.
(1)一种表面处理铜箔,其在铜箔基体上设置粗面化层而成,其特征在于,该粗面化层通过粗化粒子而形成有凹凸表面,在与该铜箔基体面正交的剖面,沿所述粗面化层的凹凸表面而测定的沿面长度(Da)相对于沿所述铜箔基体面而测定的沿面长度(Db)之比(Da/Db)处于1.05至4.00的范围,所述凹凸表面的凹凸的平均高低差(H)处于0.2至1.3μm的范围,进而在所述粗面化层上直接地或介隔中间层地具有以0.0003至0.0300mg/dm2的硅烷附着量而形成的硅烷偶联剂层。(1) A surface-treated copper foil, which is formed by providing a roughened layer on the copper foil substrate, characterized in that the roughened layer forms a concave-convex surface by roughening the particles, and is formed on the surface of the copper foil substrate. Orthogonal section, the ratio (Da/Db) of the creepage length (Da) measured along the uneven surface of the roughened layer to the creepage length (Db) measured along the surface of the copper foil substrate (Da/Db) is in the range of 1.05 to In the range of 4.00, the average height difference (H) of the concave-convex surface of the concave-convex surface is in the range of 0.2 to 1.3 μm, and then directly on the roughened layer or through an intermediate layer, there is a concentration of 0.0003 to 0.0300 mg/dm A silane coupling agent layer formed with a silane adhesion amount of 2 .
(2)根据所述表面处理铜箔,其特征在于,所述凹凸表面具有颈缩形状。(2) The surface-treated copper foil, wherein the uneven surface has a constricted shape.
(3)根据所述表面处理铜箔,其中,所述沿面长度之比(Da/Db)处于1.05至3.20的范围,所述凹凸的平均高低差(H)处于0.2至0.8μm的范围,并且在使铜箔与绝缘基板层叠时,在所述铜箔基体上的垂直于所述铜箔的制造方向的方向即宽度方向上的2.54μm的线上,所述粗面化层与绝缘基板的界面的气泡数量为2个以下。需要说明的是,所谓的铜箔的制造方向,在电解铜箔的情形时是指辊的长度方向,而在压延铜箔的情形时是指压延方向。(3) The surface-treated copper foil, wherein the creepage length ratio (Da/Db) is in the range of 1.05 to 3.20, and the average height difference (H) of the irregularities is in the range of 0.2 to 0.8 μm, and When the copper foil and the insulating substrate are laminated, on the copper foil substrate, the direction perpendicular to the manufacturing direction of the copper foil, that is, the line of 2.54 μm in the width direction, the roughened layer and the insulating substrate The number of bubbles in the interface is 2 or less. In addition, the manufacturing direction of copper foil means the longitudinal direction of a roll in the case of electrolytic copper foil, and means a rolling direction in the case of rolled copper foil.
(4)根据所述表面处理铜箔,其中,所述沿面长度之比(Da/Db)处于1.05至1.60的范围,所述凹凸的平均高低差(H)处于0.2至0.3μm的范围,在所述铜箔基体的宽度方向上的2.54μm的线上,所述粗面化层与绝缘基板的界面的气泡数量为1个以下。(4) The surface-treated copper foil, wherein the creepage length ratio (Da/Db) is in the range of 1.05 to 1.60, and the average height difference (H) of the unevenness is in the range of 0.2 to 0.3 μm, in The number of bubbles at the interface between the roughened layer and the insulating substrate is one or less on a line of 2.54 μm in the width direction of the copper foil base.
(5)根据所述表面处理铜箔,其中,所述硅烷偶联剂层的硅烷附着量为0.0005至0.0120mg/dm2。(5) The surface-treated copper foil, wherein the silane adhesion amount of the silane coupling agent layer is 0.0005 to 0.0120 mg/dm 2 .
(6)根据所述表面处理铜箔,其中,所述中间层由选自含有Ni的基底层、含有Zn的耐热处理层以及含有Cr的防锈处理层中的至少1层构成。(6) The surface-treated copper foil, wherein the intermediate layer is composed of at least one layer selected from a base layer containing Ni, a heat-resistant layer containing Zn, and a rust-proof layer containing Cr.
(7)根据所述表面处理铜箔,其中,所述硅烷偶联剂层由选自环氧系硅烷、氨基系硅烷、乙烯基系硅烷、甲基丙烯酸系硅烷、丙烯酸系硅烷、苯乙烯基系硅烷、酰脲系硅烷、巯基系硅烷、硫化物系硅烷以及异氰酸酯基系硅烷中的至少1种构成。(7) According to the surface-treated copper foil, wherein, the silane coupling agent layer is selected from epoxy silane, amino silane, vinyl silane, methacrylic silane, acrylic silane, styrene-based It consists of at least one type of silane, ureide-based silane, mercapto-based silane, sulfide-based silane, and isocyanate-based silane.
(8)一种覆铜层叠板,其使用所述表面处理铜箔制造而成,在该表面处理铜箔的粗面化层侧的面具有绝缘基板。(8) A copper-clad laminate manufactured using the above-mentioned surface-treated copper foil, and having an insulating substrate on the surface of the surface-treated copper foil on the roughened layer side.
(9)一种覆铜层叠板,其在表面处理铜箔的粗面化层侧具有绝缘基板,所述表面处理铜箔在铜箔基体上设置所述粗面化层而成,其特征在于,在与该铜箔基体面正交的剖面,沿所述粗面化层与所述绝缘基板的界面而测定的界面长度(Da')相对于沿所述铜箔基体面而测定的沿面长度(Db)之比(Da'/Db)处于1.05至4.00的范围,所述界面上凹凸的平均高低差(H')处于0.2至1.3μm的范围,进而在所述粗面化层与所述绝缘基板之间直接地或介隔中间层地具有0.0003至0.0300mg/dm2的硅烷附着量的硅烷偶联剂层。(9) A copper-clad laminate having an insulating substrate on the roughened layer side of a surface-treated copper foil, the surface-treated copper foil being formed by providing the roughened layer on a copper foil substrate, characterized in that , in a section perpendicular to the surface of the copper foil substrate, the interface length (Da') measured along the interface between the roughened layer and the insulating substrate is relative to the creepage length measured along the surface of the copper foil substrate The ratio (Da'/Db) of (Db) is in the range of 1.05 to 4.00, the average height difference (H') of the unevenness on the interface is in the range of 0.2 to 1.3 μm, and the roughened layer and the A silane coupling agent layer having a silane adhesion amount of 0.0003 to 0.0300 mg/dm 2 is provided between the insulating substrates directly or via an intermediate layer.
(10)根据所述覆铜层叠板,其中,在所述铜箔基体的宽度方向上的2.54μm的线上,粗面化层与绝缘基板的界面的气泡数量为2个以下。(10) The copper-clad laminate, wherein the number of bubbles at the interface between the roughened layer and the insulating substrate is 2 or less on a line of 2.54 μm in the width direction of the copper foil base.
发明效果Invention effect
根据本发明,能提供一种确保与绝缘基板的充分的密接性且兼具高度的回流耐热性与传输特性的表面处理铜箔,所述绝缘基板因相对介电常数和介电损耗角正切低而介电特性优异,从而能应对高速传输处理大容量信息的支持高频化信息通信设备的高性能化及高功能化。另外,本发明能提供一种使用该表面处理铜箔制造而成的覆铜层叠板。According to the present invention, it is possible to provide a surface-treated copper foil having high reflow heat resistance and transmission characteristics while ensuring sufficient adhesion to an insulating substrate whose relative permittivity and dielectric loss tangent Low and excellent dielectric properties, it can cope with the high-performance and high-functionality of high-frequency information communication equipment that supports high-frequency transmission and processing of large-capacity information. Moreover, this invention can provide the copper clad laminated board manufactured using this surface-treated copper foil.
附图说明Description of drawings
图1的(a)为表示具有本发明的颈缩形状的粗面化层的状态的剖面图。所谓颈缩形状,是指如图1的形状,即与粗化粒子的最大宽度相比,粗化粒子的根部的宽度变窄,从而在粗化粒子的根部具有凹处。图1的(b)为表示以往的粗面化层的状态的剖面图。(a) of FIG. 1 is a cross-sectional view showing the state of the roughened layer having the constricted shape of the present invention. The constricted shape refers to the shape shown in FIG. 1 , that is, the width of the root of the roughened particle is narrower than the maximum width of the roughened particle, so that the root of the roughened particle has a recess. (b) of FIG. 1 is a sectional view showing the state of a conventional roughened layer.
图2为示意性地表示构成凹凸表面的凹凸的平均高低差H的剖面图,所述凹凸表面构成粗面化层。FIG. 2 is a cross-sectional view schematically showing the average height difference H of the unevenness constituting the uneven surface constituting the roughened layer.
图3为示意性地表示图1所示的粗面化层的凹凸表面上沿面长度Da的剖面图。Fig. 3 is a cross-sectional view schematically showing the creeping length Da on the uneven surface of the roughened layer shown in Fig. 1 .
图4的(a)为表示用于测定构成凹凸表面的凹凸的平均高低差H的基线BL1的剖面图,所述凹凸表面构成粗面化层。图4的(b)为同样地表示基线BL2的剖面图。(a) of FIG. 4 is a cross-sectional view showing a baseline BL1 for measuring the average height difference H of the unevenness constituting the roughened surface constituting the roughened layer. (b) of FIG. 4 is a sectional view similarly showing the base line BL2.
图5为示意性地表示存在于粗面化层与绝缘基板的界面的气泡的剖面图。FIG. 5 is a cross-sectional view schematically showing air bubbles present at the interface between the roughened layer and the insulating substrate.
具体实施方式Detailed ways
以下,一面参照附图一面对依据本发明的表面处理铜箔的实施方式进行说明。图1的(a)表示在铜箔的表面形成粗面化层时的剖面构造,所述铜箔构成依据本发明的代表性的表面处理铜箔。Hereinafter, embodiment of the surface-treated copper foil according to the present invention will be described with reference to the drawings. (a) of FIG. 1 shows a cross-sectional structure when a roughened layer is formed on the surface of copper foil constituting a typical surface-treated copper foil according to the present invention.
本发明的表面处理铜箔主要由铜箔110、粗面化层120以及硅烷偶联剂层(未图示)构成。即,在本发明中,将在铜箔110上形成粗面化层120作为表面处理、进而形成硅烷偶联剂层(未图示)作为表面处理者称为表面处理铜箔。The surface-treated copper foil of the present invention is mainly composed of a copper foil 110, a roughened layer 120, and a silane coupling agent layer (not shown). That is, in the present invention, those who form roughened layer 120 on copper foil 110 as surface treatment and further form silane coupling agent layer (not shown) as surface treatment are referred to as surface-treated copper foil.
铜箔110可根据用途等适当地从电解铜箔、电解铜合金箔、压延铜箔或压延铜合金箔中选择。Copper foil 110 can be appropriately selected from electrolytic copper foil, electrolytic copper alloy foil, rolled copper foil, or rolled copper alloy foil according to applications and the like.
粗面化层120通过在铜箔基体110上实施粗面化处理而设置,表面形成有大致粒状的微细凹凸。在该粗面化处理中,通过以超过极限电流密度的电流密度在产生氢气的同时进行铜电析而成为所谓的烧焦镀层的状态,从而形成粒状的电析物并形成微米级的微细凹凸表面。在本发明中,此种微细的凹凸表面简称为凹凸表面。另外,本发明中的粗化粒子是指该粒状的电析物。The roughened layer 120 is provided by roughening the copper foil base 110 , and has roughly granular fine irregularities formed on the surface. In this roughening treatment, copper electrolysis is performed at a current density exceeding the limiting current density while hydrogen gas is generated to form a so-called burnt plating state, whereby granular electrolytic deposits are formed and micron-order fine unevenness is formed. surface. In the present invention, such a fine uneven surface is simply referred to as an uneven surface. In addition, the roughened particle in this invention means this granular electrodeposited material.
而且,在本发明中,在与铜箔基体面正交的剖面,使沿所述粗面化层120的凹凸表面而测定的沿面长度Da相对于沿所述铜箔基体面而测定的沿面长度Db之(线长)比Da/Db处于1.05至4.00的范围。线长比Da/Db可处于1.05至3.20的范围,且线长比Da/Db也可处于1.05至1.60的范围。Moreover, in the present invention, in a section perpendicular to the copper foil base surface, the creepage length Da measured along the uneven surface of the roughened layer 120 is relative to the creepage length Da measured along the copper foil base surface The (line length) ratio Da/Db of Db is in the range of 1.05 to 4.00. The line length ratio Da/Db may be in the range of 1.05 to 3.20, and the line length ratio Da/Db may also be in the range of 1.05 to 1.60.
若线长比Da/Db低于1.05,则回流耐热性会降低而无法获得令人满意的性能。若线长比Da/Db超过4.00,则表面的凹凸会过度地增加,所以会由于集肤效应而使传输损耗变大而导致传输特性变差,因此使线长比Da/Db处于1.05至4.00的范围。需要说明的是,线长比Da/Db的测定方法将在下文进行说明。If the wire length ratio Da/Db is less than 1.05, reflow heat resistance may be reduced and satisfactory performance may not be obtained. If the line length ratio Da/Db exceeds 4.00, the unevenness of the surface will increase excessively, so the transmission loss will increase due to the skin effect and the transmission characteristics will deteriorate, so the line length ratio Da/Db is set at 1.05 to 4.00 range. It should be noted that the method of measuring the line length ratio Da/Db will be described below.
本发明人努力调查线长比Da/Db影响回流耐热性的原因,结果获得如下的新见解。首先,对回流耐热试验的试验片的制作方法进行说明。将在两面使铜箔层叠而成的绝缘基板(基材)作为芯层。利用氯化铜(II)溶液等对芯层进行蚀刻而使所有的铜箔被溶解去除。接着,在芯层经蚀刻后残留的绝缘基板(基材)的两面,使由绝缘材料构成的预浸料层与铜箔层叠而制作回流试验片。对该回流试验片的剖面进行观察,结果确认:在芯层的绝缘基板(基材)与预浸料层接触的界面复制有构成芯层的铜箔的表面形状。并且确认:在回流耐热试验中,因为样品(试验片)暴露于260℃左右的高温下,所以绝缘基板(基材)中的低分子量的成分会挥发,挥发的气体积存于绝缘基板与预浸料层之间的密接性较弱的区域而成为层间剥离的原因。因此,一般认为:若线长比Da/Db低于1.05,则通过蚀刻而被复制的区域会变少,结果绝缘基板(基材)与预浸料层接触的区域会减少,由此产生两层间的密接性较低的区域,从而在加热时自基材挥发的气体会积存于层间的该区域而导致剥离变得容易发生。The present inventors made an effort to investigate the reason why the line length ratio Da/Db affects the reflow heat resistance, and as a result obtained the following new knowledge. First, a method of preparing a test piece for a reflow heat resistance test will be described. An insulating substrate (base material) obtained by laminating copper foils on both surfaces was used as a core layer. The core layer is etched with a copper(II) chloride solution or the like to dissolve and remove all the copper foil. Next, prepreg layers made of an insulating material and copper foil were laminated on both surfaces of the insulating substrate (base material) remaining after the etching of the core layer to prepare a reflow test piece. As a result of observing the cross section of this reflow test piece, it was confirmed that the surface shape of the copper foil constituting the core layer was replicated at the interface where the insulating substrate (base material) of the core layer was in contact with the prepreg layer. And it was confirmed that in the reflow heat resistance test, since the sample (test piece) was exposed to a high temperature of about 260°C, the low molecular weight components in the insulating substrate (substrate) would volatilize, and the volatilized gas would accumulate between the insulating substrate and the pre-heated substrate. The area where the adhesion between the impregnation layers is weak becomes the cause of delamination. Therefore, it is generally considered that if the line length ratio Da/Db is less than 1.05, the area copied by etching will be reduced, and as a result, the area where the insulating substrate (base material) contacts the prepreg layer will decrease, resulting in two problems. In the area where the adhesion between the layers is low, the gas volatilized from the substrate during heating will accumulate in this area between the layers, and peeling will easily occur.
在本发明中,经过努力研究,结果发现:通过将线长比Da/Db以及凹凸的平均高低差H控制在适当的范围,能获得具有颈缩形状的粗化形状,从而与公知例中利用表面积来进行控制的铜箔相比,耐热性显著地提高。即,若在本案的凹凸的平均高低差H的范围内以不会使传输特性降低的程度增加Da/Db,则粗化层的轮廓长度会变长,结果能获得具有大量颈缩形状的粗化形状。通过使颈缩形状增多,虽然粗化微细,但表现出强锚固效应,从而铜箔与绝缘基板(树脂基板)的密接性增强,耐热性提高。因此,在本案的请求范围内,通过控制Da/Db与平均高低差H而在维持高度的传输特性的状态下使耐热性与公知例相比有显著提高。In the present invention, as a result of diligent research, it has been found that by controlling the line length ratio Da/Db and the average height difference H of the concavo-convex within an appropriate range, a roughened shape with a constricted shape can be obtained, thereby being different from that used in the known examples. Compared with copper foil whose surface area is controlled, the heat resistance is significantly improved. That is, if Da/Db is increased within the range of the average height difference H of the concavities and convexities of this invention so as not to degrade the transmission characteristics, the profile length of the roughened layer becomes longer, and as a result, a roughened layer with a large number of constricted shapes can be obtained. shape. By increasing the number of constricted shapes, a strong anchoring effect is exhibited although the roughness is fine, and the adhesiveness between the copper foil and the insulating substrate (resin substrate) is enhanced, and the heat resistance is improved. Therefore, within the claimed range of the present application, by controlling Da/Db and the average height difference H, the heat resistance can be significantly improved compared with the known example while maintaining high transmission characteristics.
作为使粗化形状定量的参数,如专利文献4(WO2011-090175)所示,已知有利用激光显微镜测得的表面积比。然而作为问题点,例如如图1所示,在存在(a)有颈缩形状11的粗化与(b)无颈缩形状的粗化的情形下,理论上在利用激光显微镜测定表面积时,因为是自铜箔的垂直方向投射激光而测定高度,所以难以测定图1的(a)及图1的(b)的有无颈缩形状之差。即,虽然能测定激光所直接照射的表面的形状,但如颈缩部分,自垂直方向投射激光时会变成影子,从而未直接被激光照射的部分将不可能测定出形状。As a parameter for quantifying the roughened shape, as shown in Patent Document 4 (WO2011-090175), the surface area ratio measured with a laser microscope is known. However, as a problem, for example, as shown in FIG. 1 , when there are (a) roughening of the constricted shape 11 and (b) roughening of the non-constricted shape, when the surface area is measured theoretically using a laser microscope, Since the height is measured by projecting laser light from the vertical direction of the copper foil, it is difficult to measure the difference between the presence or absence of the constriction shape of FIG. 1( a ) and FIG. 1( b ). That is, although the shape of the surface directly irradiated by the laser can be measured, such as a necked part, when the laser is projected from the vertical direction, it will become a shadow, so it is impossible to measure the shape of the part that is not directly irradiated by the laser.
因此,如专利文献4的实施方式所示,利用激光显微镜来测定表面积比时,无法将颈缩形状的有无反映于测定值中,所以通过激光显微镜所测得的表面积比来控制铜箔的表面形状对于本案而言不合适。此外专利文献4所示的纵横比仅表示粗化粒子的“高度”与“宽度”之比,完全没有考虑颈缩形状。Therefore, as shown in the embodiment of Patent Document 4, when the surface area ratio is measured with a laser microscope, the presence or absence of a constricted shape cannot be reflected in the measured value, so the surface area ratio measured by the laser microscope is used to control the copper foil. The surface shape is not suitable for this case. In addition, the aspect ratio shown in Patent Document 4 only represents the ratio of the "height" to the "width" of the roughened particles, and does not consider the constricted shape at all.
再者,若使绝缘基板密接于具有由所述实施方式而获得的粗面化层的铜箔的粗面化层侧而形成覆铜层叠板,则存在沿粗面化层与绝缘基板的界面而测定的界面长度(Da')会由于与绝缘基板的加压密接而稍微缩小的倾向。因此,在绝缘基板密接后也需要使所述线长比维持在所述范围,并且,在绝缘基板密接后的与该铜箔基体面正交的剖面上,通过使沿所述粗面化层与所述绝缘基板的界面而测定的界面长度(Da')相对于沿所述铜箔基体面而测定的沿面长度(Db)之比(Da'/Db)处于1.05至4.00的范围,能获得与所述(Da/Db)的情形同样的效果。Furthermore, when an insulating substrate is brought into close contact with the roughened layer side of the copper foil having the roughened layer obtained in the above-described embodiment to form a copper-clad laminate, there is a gap along the interface between the roughened layer and the insulating substrate. On the other hand, the measured interface length (Da') tends to be slightly reduced due to pressurized close contact with the insulating substrate. Therefore, it is necessary to maintain the line length ratio in the above-mentioned range even after the insulating substrate is closely bonded, and, on a section perpendicular to the surface of the copper foil base after the insulating substrate is bonded, by making the roughened layer The ratio (Da'/Db) of the interface length (Da') measured at the interface with the insulating substrate to the creepage length (Db) measured along the surface of the copper foil base (Da'/Db) is in the range of 1.05 to 4.00, and it is possible to obtain The same effect as in the case of (Da/Db) described above.
因此,在本发明中使铜箔的凹凸表面的凹凸的平均高低差(相当于粗化粒子的平均高度)H处于0.2至1.3μm的范围。若凹凸表面的凹凸的平均高低差H低于0.2μm,则锚固效应弱,因而无法获得铜箔与绝缘基板的充分的密接性。另外,若凹凸表面的凹凸的平均高低差H超过1.3μm,则表面凹凸会变得过大,从而传输损耗会由于集肤效应而变大。再者,凹凸表面的凹凸的平均高低差H可处于0.2至0.8μm的范围,且凹凸表面的凹凸的平均高低差H也可处于0.2至0.3μm的范围。Therefore, in the present invention, the average height difference (corresponding to the average height of the roughened particles) H of the unevenness of the uneven surface of the copper foil is in the range of 0.2 to 1.3 μm. When the average height difference H of the uneven|corrugated surface is less than 0.2 micrometer, since anchor effect is weak, sufficient adhesiveness of copper foil and an insulating substrate cannot be acquired. In addition, when the average height difference H of the unevenness on the uneven surface exceeds 1.3 μm, the surface unevenness becomes too large, and the transmission loss increases due to the skin effect. Furthermore, the average height difference H of the concave-convex surface may be in the range of 0.2-0.8 μm, and the average height difference H of the concave-convex surface may also be in the range of 0.2-0.3 μm.
再者,若使绝缘基板密接于具有由所述实施方式而获得的粗面化层的铜箔的粗面化层侧而形成覆铜层叠板,则存在粗面化层的凹凸差H会由于与绝缘基板的加压密接而稍微减小的倾向。因此,在绝缘基板密接后也需要使凹凸的平均高度维持在所述范围,并且通过在绝缘基板密接后的与该铜箔基体面正交的剖面使凹凸表面的凹凸的平均高低差(相当于粗化粒子的平均高度)H'处于0.2至1.3μm的范围,能获得与所述H的情形同样的效果。Furthermore, if an insulating substrate is brought into close contact with the roughened layer side of the copper foil having the roughened layer obtained in the above embodiment to form a copper-clad laminate, the unevenness H of the roughened layer will be caused by Tendency to slightly decrease due to pressurized close contact with the insulating substrate. Therefore, it is also necessary to maintain the average height of the unevenness in the range after the insulating substrate is closely bonded, and the average height difference of the unevenness of the uneven surface (equivalent to The average height of the roughened particles) H′ is in the range of 0.2 to 1.3 μm, and the same effect as in the case of H can be obtained.
本发明人等针对在适当的凹凸平均高低差(H)的范围中控制Da/Db的方法进行调查后发现:在文献6及文献7的粗化方法中因为螯合剂的浓度高,所以在铜箔表面形成大量微细的粗化粒子会使Da/Db过度增加,结果导致传输损耗加剧。本发明人等努力研究该问题的对策,结果得知:通过使螯合剂的浓度相较于以往为低浓度,粒子将变成适当的大小,可以将Da/Db控制在最适合的范围,在保持高度密接性与耐热性的同时提高传输损耗特性。具体而言,可使添加至电镀浴中的螯合剂的浓度处于0.1至5g/L的范围。The inventors of the present invention investigated the method of controlling Da/Db in the range of an appropriate uneven average height difference (H), and found that in the roughening methods of Document 6 and Document 7, the concentration of the chelating agent was high, so the copper The formation of a large number of fine roughened particles on the surface of the foil will excessively increase Da/Db, resulting in increased transmission loss. The inventors of the present invention worked hard to study the countermeasures of this problem, and as a result, it was found that by making the concentration of the chelating agent lower than in the past, the particles will become an appropriate size, and Da/Db can be controlled in the most suitable range. Improves transmission loss characteristics while maintaining high adhesion and heat resistance. Specifically, the concentration of the chelating agent added to the plating bath can be made to be in the range of 0.1 to 5 g/L.
作为反应的机理,推测通过使螯合剂为低浓度来使电解时的过电压相较于高浓度条件有所降低,从而使成核频率降低,因此能适当地抑制微细化效果而形成适当大小的粗化粒子。另外,一般认为:在螯合剂为低浓度的情形时,因为浴中的螯合物分子的数量少,所以处于螯合物大部分已配位的金属离子(Cu等)与螯合物未配位的金属离子于浴中混在一起的状态,螯合物配位状态的差异使析出模式不同的粒子同时形成,由此成为具有颈缩形状的复杂粒子形状,从而在适当的Da/Db的范围也能兼具高度的耐热性与密接性。另外,使螯合剂为低浓度时,则粗化粒子的高度方向上的成长会被适当地抑制,从而使凹凸的平均高低差H处于适当的范围。根据所述的螯合物大部分已配位的金属离子(Cu等)与螯合物未配位的金属离子于浴中混在一起的状态下的析出模式,析出的取向为无规,因此高度方向上的成长得以抑制。As the mechanism of the reaction, it is presumed that by using a low concentration of the chelating agent, the overvoltage during electrolysis is reduced compared to the high concentration condition, thereby reducing the nucleation frequency, so that the effect of miniaturization can be appropriately suppressed to form a suitable size. Coarse particles. In addition, it is generally believed that when the chelating agent is at a low concentration, because the number of chelate molecules in the bath is small, most of the coordinated metal ions (Cu, etc.) in the chelate are uncoordinated with the chelate. The metal ions at the position are mixed together in the bath, and the difference in the coordination state of the chelate causes particles with different precipitation modes to form at the same time, thus becoming a complex particle shape with a necked shape, so that in the appropriate Da/Db range It can also combine high heat resistance and adhesiveness. In addition, when the concentration of the chelating agent is low, the growth in the height direction of the roughened particles is appropriately suppressed, and the average height difference H of the unevenness is set in an appropriate range. According to the precipitation mode in the state where most of the coordinated metal ions (Cu, etc.) of the chelate and the uncoordinated metal ions of the chelate are mixed together in the bath, the orientation of the precipitation is random, so it is highly Growth in the direction is suppressed.
另外,本发明人发现:作为适当控制Da/Db的方法,向粗面化处理浴添加两种螯合剂的方法也有效果。据推测:通过添加两种螯合剂,螯合物的配位状态不同的金属同时被电解,形状不同的粒子同时析出,由此粗化粒子形状变得复杂,从而容易表现出锚固效应。In addition, the inventors of the present invention have found that a method of adding two types of chelating agents to a roughening treatment bath is also effective as a method of appropriately controlling Da/Db. It is speculated that by adding two kinds of chelating agents, metals with different coordination states of the chelates are electrolyzed at the same time, and particles with different shapes are precipitated at the same time, so that the shape of the coarsened particles becomes complicated, and the anchoring effect is easily exhibited.
作为其他对Da/Db进行适当管理的方法,利用以往由于粉末掉落等不良状况而未使用的70至90A/dm2的电流密度来形成粗化粒子也有效果。但若处理时间长则粒子会沿垂直方向过度成长而变得容易掉落粉末,因此需要使处理时间短。若为高电流密度,则阴极上的氢气生成量会增加。推测:氢气自阴极脱离而进入液中之前为无法电镀的斑点,因此粗化的析出时间点会变得不连续,结果可获得凹凸数量适当多的表面形状。As another method of appropriately managing Da/Db, it is also effective to form roughened particles at a current density of 70 to 90 A/dm 2 , which has not been used in the past due to problems such as powder falling. However, if the treatment time is long, the particles will grow excessively in the vertical direction and the powder will easily fall off, so the treatment time needs to be shortened. When the current density is high, the amount of hydrogen gas generated on the cathode increases. It is speculated that before the hydrogen gas escapes from the cathode and enters the liquid, it is a spot that cannot be plated, so the time point of the coarsening deposition becomes discontinuous, and as a result, a surface shape with a suitable number of unevennesses can be obtained.
进而,在本发明中,在粗面化层120上直接地或介隔中间层地具有以0.0003至0.0300mg/dm2的硅烷附着量而形成的硅烷偶联剂层。若构成硅烷偶联剂层的硅烷偶联剂的硅烷附着量低于0.0003mg/dm2,则回流耐热性会降低。另外,若所述附着量超过0.0300mg/dm2,则硅烷偶联剂层会变得过厚,反而会使密接强度降低。需要说明的是,构成硅烷偶联剂层的硅烷偶联剂的硅烷附着量也可为0.0005至0.0120mg/dm2。Furthermore, in the present invention, a silane coupling agent layer formed with a silane adhesion amount of 0.0003 to 0.0300 mg/dm 2 is provided on the rough-surfaced layer 120 directly or via an intermediate layer. If the silane adhesion amount of the silane coupling agent constituting the silane coupling agent layer is less than 0.0003 mg/dm 2 , reflow heat resistance will decrease. Moreover, when the said adhesion amount exceeds 0.0300 mg/dm <2> , the silane coupling agent layer will become too thick, and adhesion strength will fall conversely. It should be noted that the silane adhesion amount of the silane coupling agent constituting the silane coupling agent layer may be 0.0005 to 0.0120 mg/dm 2 .
再者,作为硅烷偶联剂层的形成方法,例如可列举以下方法:在粗面化层120的凹凸表面上直接地或介隔中间层而间接地涂布硅烷偶联剂溶液,之后经风干或加热干燥而形成。关于涂布而成的偶联剂层的干燥,只要水分蒸发就能充分发挥本发明的效果,但从促进硅烷偶联剂与铜箔的反应的观点出发,优选为在50至180℃的温度下进行加热干燥。Furthermore, as the formation method of the silane coupling agent layer, for example, the following method can be enumerated: directly or indirectly coating a silane coupling agent solution through an intermediate layer on the uneven surface of the roughened layer 120, and then air-drying Or formed by heating and drying. Regarding the drying of the coated coupling agent layer, the effect of the present invention can be fully exhibited as long as the moisture evaporates, but from the viewpoint of accelerating the reaction between the silane coupling agent and the copper foil, it is preferably at a temperature of 50 to 180°C Under heat drying.
优选为硅烷偶联剂层含有环氧系硅烷、氨基系硅烷、乙烯基系硅烷、甲基丙烯酸系硅烷、丙烯酸系硅烷、苯乙烯基系硅烷、酰脲系硅烷、巯基系硅烷、硫化物系硅烷以及异氰酸酯基系硅烷中的任一者以上。Preferably, the silane coupling agent layer contains epoxy-based silane, amino-based silane, vinyl-based silane, methacrylic-based silane, acrylic-based silane, styryl-based silane, ureide-based silane, mercapto-based silane, sulfide-based Any one or more of silanes and isocyanate-based silanes.
优选为本发明的凹凸表面具有大量颈缩形状。虽然具有大量颈缩形状会造成粗化微细,但能表现出强锚固效应而使铜箔与绝缘基板的密接性增强、耐热性提高。要形成具有大量颈缩形状的凹凸表面,如上所述,通过使凹凸的平均高低差H处于0.2至1.3μm的范围内并将Da/Db控制在1.4至4.0的范围内,能使粗化层的轮廓长度变长,结果能获得具有大量颈缩形状的粗化形状。It is preferable that the concave-convex surface of the present invention has a large number of constricted shapes. Although a large number of necked shapes will cause coarsening and fineness, it can exhibit a strong anchoring effect to enhance the adhesion between the copper foil and the insulating substrate and improve the heat resistance. To form a concave-convex surface with a large number of constricted shapes, as described above, the roughened layer can be made The profile length of the becomes longer, resulting in a roughened shape with a lot of necked-in shape.
另外,在本发明中,优选为在使铜箔与绝缘基板层叠时,所述粗面化层与绝缘基板的界面的气泡数量在基板的宽度(例如2.54μm)上为2个以下。本案中,在调查影响回流耐热性的因素的过程中发现:除所述的线长比Da/Db及平均高低差H以外,回流试验片中铜箔的粗面化层与绝缘基板的界面的气泡数量也有很大影响。此处,所谓本案中的气泡,是指在粗面化层与绝缘基板的界面未填充绝缘基板的区域,其大小以长径计为1.0μm以下。若铜箔的粗面化层与绝缘基板的界面的气泡数量多,则在回流试验中的加热时,自所述绝缘基板中挥发的气体会集中于气泡部分而使气泡内的气体压力变高,导致层间剥离变得容易发生。In addition, in the present invention, when laminating the copper foil and the insulating substrate, the number of bubbles at the interface between the roughened layer and the insulating substrate is preferably 2 or less over the width of the substrate (for example, 2.54 μm). In this case, in the process of investigating the factors affecting the reflow heat resistance, it was found that, in addition to the above-mentioned line length ratio Da/Db and the average height difference H, the interface between the roughened layer of the copper foil and the insulating substrate in the reflow test piece The number of bubbles also has a big impact. Here, the bubbles in this case refer to a region where the insulating substrate is not filled at the interface between the roughened layer and the insulating substrate, and the size thereof is 1.0 μm or less in terms of the major axis. If the number of air bubbles at the interface between the roughened layer of the copper foil and the insulating substrate is large, the gas volatilized from the insulating substrate will concentrate in the air bubbles during heating in the reflow test, and the gas pressure in the air bubbles will increase. , causing delamination to easily occur.
因此,本发明人努力调查减少粗面化层与基板的界面的气泡数量的方法,结果得知:适当控制硅烷偶联剂的处理条件是有效方法。具体而言,首先向硅烷偶联剂水溶液添加醇的方法。作为醇,可列举甲醇、乙醇、异丙醇、正丙醇等。通过添加醇,溶液中的硅烷分子的分散性变好,在铜箔的粗面化层可均匀地处理硅烷偶联剂,因此对于树脂的浸润性得以提高。而且据推测:在高温下压合基板与铜箔时,熔融树脂会充分浸润粗面化层而使填充性变得良好,从而使粗面化层与基板的界面的气泡数量减少。另外,使从利用硅烷水溶液处理铜箔之后至利用暖风进行干燥为止的时间延长也具有效果。据推测:使从利用硅烷水溶液进行处理之后直至利用暖风进行干燥为止的时间延长,可使硅烷分子于铜箔的粗面化层表面有规则地进行取向而提高对于树脂的浸润性,结果使粗面化层与绝缘基板的界面的气泡数量减少。例如,在专利文献4所介绍的硅烷处理的情形时,未考虑树脂对粗面化层的浸润性,从而导致粗面化层与绝缘基板的界面的气泡数量容易增加。Therefore, the inventors of the present invention tried to investigate a method for reducing the number of bubbles at the interface between the roughened layer and the substrate, and as a result, it was found that appropriately controlling the treatment conditions of the silane coupling agent is an effective method. Specifically, first, there is a method of adding alcohol to an aqueous silane coupling agent solution. As alcohol, methanol, ethanol, isopropanol, n-propanol, etc. are mentioned. By adding alcohol, the dispersibility of the silane molecules in the solution becomes better, and the silane coupling agent can be uniformly processed on the roughened layer of the copper foil, so the wettability to the resin is improved. Furthermore, it is presumed that when the substrate and the copper foil are bonded at high temperature, the molten resin sufficiently infiltrates the roughened layer to improve the fillability, thereby reducing the number of air bubbles at the interface between the roughened layer and the substrate. In addition, it is also effective to extend the time from the treatment of the copper foil with the silane aqueous solution to drying with warm air. It is speculated that by extending the time from the treatment with the silane aqueous solution to the drying with warm air, the silane molecules can be regularly oriented on the surface of the roughened layer of the copper foil and the wettability to the resin can be improved. As a result, the The number of air bubbles at the interface between the roughened layer and the insulating substrate is reduced. For example, in the case of the silane treatment described in Patent Document 4, the wettability of the resin to the roughened layer is not considered, and the number of bubbles at the interface between the roughened layer and the insulating substrate tends to increase.
铜箔的粗面化层与绝缘基板的界面的气泡数量在基板的宽度方向即2.54μm的线上只要为2个以下即可。气泡的数量在该线上也可为1个以下或0个。若铜箔的粗面化层与绝缘基板的界面的气泡数量在该线上为3个以上,则存在在回流试验时自绝缘基板中产生的气体会集中于气泡部分而导致相间剥离容易发生,且回流耐热性(铜箔与预浸料层之间)降低的倾向。The number of bubbles at the interface between the roughened layer of the copper foil and the insulating substrate should only be 2 or less on the line of 2.54 μm in the width direction of the substrate. The number of air bubbles may be 1 or less or 0 on this line. If the number of air bubbles at the interface between the roughened layer of the copper foil and the insulating substrate is 3 or more on this line, the gas generated from the insulating substrate during the reflow test may concentrate on the air bubbles and cause interphase delamination to occur easily. And the reflow heat resistance (between the copper foil and the prepreg layer) tends to decrease.
作为其他实施方式,也可在粗面化层120与硅烷偶联剂层之间进一步具有选自含有Ni的基底层、含有Zn的耐热处理层以及含有Cr的防锈处理层中的至少1层中间层。As another embodiment, between the roughened layer 120 and the silane coupling agent layer, there may be at least 1 selected from the base layer containing Ni, the heat-resistant treatment layer containing Zn, and the rust-proof treatment layer containing Cr. layer middle layer.
若存在例如铜箔基体110或粗面化层120中的铜(Cu)扩散至绝缘基板侧而产生铜危害并使密接性降低的情况,则优选为在粗面化层120与硅烷偶联剂层之间形成含有镍(Ni)的基底层。含Ni的基底层含有镍(Ni)、镍(Ni)-磷(P)、镍(Ni)-锌(Zn)中的至少1种以上。其中,就能抑制电路配线形成时的铜箔蚀刻时的镍残留的观点而言,优选为镍-磷。If, for example, copper (Cu) in the copper foil substrate 110 or the rough-surfaced layer 120 diffuses to the insulating substrate side to cause copper damage and reduce the adhesion, it is preferable to mix the roughened layer 120 with a silane coupling agent. An underlayer containing nickel (Ni) is formed between the layers. The Ni-containing underlayer contains at least one of nickel (Ni), nickel (Ni)-phosphorus (P), and nickel (Ni)-zinc (Zn). Among these, nickel-phosphorus is preferable from the viewpoint of being able to suppress nickel residue during copper foil etching during circuit wiring formation.
优选为在需要进一步提高耐热性的情形时形成含有锌(Zn)的耐热处理层。优选为耐热处理层由例如锌或含有锌的合金,即选自锌(Zn)-锡(Sn)、锌(Zn)-镍(Ni)、锌(Zn)-钴(Co)、锌(Zn)-铜(Cu)、锌(Zn)-铬(Cr)以及锌(Zn)-钒(V)中的至少1种以上的含锌合金所形成。其中,就抑制电路配线形成时的蚀刻时的底切的观点而言,特别优选为锌-钒。再者,此处所说的“耐热性”是指使绝缘基板层叠于表面处理铜箔并进行加热而使树脂固化后表面处理铜箔与绝缘基板之间的密接强度不容易降低的性质,是不同于回流耐热性的特性。It is preferable to form a heat-resistant treatment layer containing zinc (Zn) when the heat resistance needs to be further improved. It is preferred that the heat-resistant treatment layer is made of, for example, zinc or an alloy containing zinc, namely selected from zinc (Zn)-tin (Sn), zinc (Zn)-nickel (Ni), zinc (Zn)-cobalt (Co), zinc ( Zn)-copper (Cu), zinc (Zn)-chromium (Cr), and zinc (Zn)-vanadium (V) containing at least one zinc-containing alloy. Among them, zinc-vanadium is particularly preferable from the viewpoint of suppressing undercut during etching during circuit wiring formation. In addition, the "heat resistance" mentioned here refers to the property that the adhesion strength between the surface-treated copper foil and the insulating substrate is not easily reduced after the insulating substrate is laminated on the surface-treated copper foil and heated to cure the resin. for reflow heat resistance characteristics.
也可在需要进一步提高耐腐蚀性的情形时形成含有Cr的防锈处理层。作为防锈处理层,例如可列举通过镀铬而成的铬层以及通过铬酸盐处理而形成的铬酸盐层。A rust preventive treatment layer containing Cr may also be formed when further improvement of corrosion resistance is required. Examples of the antirust treatment layer include a chromium layer formed by chrome plating and a chromate layer formed by chromate treatment.
所述三层即基底层、耐热处理层以及防锈处理层都要形成时,可在粗面化层上以该顺序形成,也可根据作为用途或目的的特性而仅形成所述三层中的任一层或任两层。When the above-mentioned three layers, that is, the base layer, the heat-resistant treatment layer, and the anti-rust treatment layer are all formed, they may be formed in this order on the roughened layer, or only the three layers may be formed according to the characteristics as the use or purpose. Either layer or any two layers.
另外,优选为本发明的表面处理铜箔用于覆铜层叠板的制造。覆铜层叠板在表面处理铜箔的粗面化层侧的面具有绝缘基板。Moreover, it is preferable that the surface-treated copper foil of this invention is used for manufacture of a copper-clad laminated board. The copper-clad laminate has an insulating substrate on the roughened layer side surface of the surface-treated copper foil.
用于覆铜层叠板的绝缘基板可使用选自热固性聚苯醚树脂、含有聚苯乙烯系聚合物的热固性聚苯醚树脂、含有氰尿酸三烯丙酯的聚合物或共聚物的树脂组合物、经甲基丙烯酸或丙烯酸改性的环氧树脂组合物、酚类加成丁二烯聚合物、苯二甲酸二烯丙酯树脂、二乙烯基苯树脂、多官能性甲基丙烯酰基树脂、不饱和聚酯树脂、聚丁二烯树脂、苯乙烯-丁二烯、苯乙烯-丁二烯与苯乙烯-丁二烯的交联聚合物等的绝缘树脂。Insulating substrates for copper-clad laminates can use resin compositions selected from thermosetting polyphenylene ether resins, thermosetting polyphenylene ether resins containing polystyrene-based polymers, polymers or copolymers containing triallyl cyanurate , Epoxy resin composition modified by methacrylic acid or acrylic acid, phenolic addition butadiene polymer, diallyl phthalate resin, divinylbenzene resin, multifunctional methacryl resin, Insulating resins such as unsaturated polyester resins, polybutadiene resins, styrene-butadiene, cross-linked polymers of styrene-butadiene and styrene-butadiene, etc.
在制造覆铜层叠板的情形时,只要是通过加热压合具有硅烷偶联剂层的表面处理铜箔与绝缘基板并使两者密接来制造即可。再者,在绝缘基板上涂布硅烷偶联剂,并通过加热压合使绝缘基板与在最表面具有防锈处理层的铜箔密接而制作的覆铜层叠板也具有与本发明同等的效果。When manufacturing a copper-clad laminated board, what is necessary is just to manufacture by heat-compression-bonding the surface-treated copper foil which has a silane coupling agent layer, and an insulating substrate, and bringing both into close contact. Furthermore, the copper-clad laminate made by coating the silane coupling agent on the insulating substrate and making the insulating substrate and the copper foil with an anti-rust treatment layer on the outermost surface by heating and pressing has the same effect as the present invention. .
〔表面处理铜箔的制作〕〔Production of surface-treated copper foil〕
(1)粗面化层的形成工序(1) Step of forming roughened layer
通过粗化粒子的电析而在铜箔上形成具有凹凸表面的粗面化层。A roughened layer having an uneven surface is formed on copper foil by electrolysis of roughened particles.
优选为:除控制线长比Da/Db以外,进而(i)适当地控制粗化粒子的大小、以及(ii)使形状不同的粗化粒子容易同时析出。In addition to controlling the line length ratio Da/Db, it is preferable to further (i) appropriately control the size of the roughened particles and (ii) facilitate simultaneous deposition of roughened particles having different shapes.
就(i)的观点而言,例如可采用减小电解时的过电压以减小成核频率的方法,作为其具体例,可列举使螯合剂为低浓度的方法。或者也可采用使进行粗化处理时的电流密度高达70至90A/dm2而缩短处理时间的方法。From the viewpoint of (i), for example, a method of reducing the overvoltage during electrolysis to reduce the frequency of nucleation can be employed, and a specific example thereof includes a method of reducing the concentration of a chelating agent. Alternatively, a method of shortening the treatment time by increasing the current density at the time of the roughening treatment to 70 to 90 A/dm 2 may also be employed.
此处,添加至粗面化处理的电镀浴中的螯合剂的浓度处于0.1至5g/L会较为适当。作为螯合剂,可列举DL-苹果酸、EDTA钠溶液、葡萄糖酸钠、二亚乙基三胺五乙酸五钠(DTPA)等螯合剂等。Here, the concentration of the chelating agent added to the electroplating bath for roughening treatment is preferably 0.1 to 5 g/L. Examples of the chelating agent include chelating agents such as DL-malic acid, sodium EDTA solution, sodium gluconate, pentasodium diethylenetriaminepentaacetic acid (DTPA), and the like.
另外,就(ii)的观点而言,例如可采用使螯合物的配位状态不同的金属同时被电解的方法,作为其具体例,可列举向粗面化处理浴添加两种螯合剂的方法。作为例子,有DL-苹果酸与DTPA的组合。In addition, from the viewpoint of (ii), for example, a method in which metals having different coordination states of chelates are electrolyzed at the same time can be employed. As a specific example, a method of adding two kinds of chelating agents to a roughening treatment bath can be mentioned. method. As an example, there is the combination of DL-malic acid and DTPA.
另外,为了在铜箔基体的宽度方向即2.54μm的线上使粗面化层与绝缘基板的界面中的气泡数量为2个以下,可采用提高粗面化层对绝缘基板表面的浸润性等方法。因此,存在例如(i)以使硅烷偶联剂层均匀地形成于粗面化层的方式进行硅烷偶联处理,(ii)以使硅烷偶联剂层中的硅烷分子有规则地取向的方式进行硅烷偶联处理等方法。作为(i)的具体例,可列举向硅烷偶联剂水溶液添加醇的方法,作为(ii)的具体例,可列举使从利用硅烷水溶液处理粗化处理铜箔之后、到利用暖风进行干燥之前的时间延长的方法等。In addition, in order to reduce the number of air bubbles in the interface between the roughened layer and the insulating substrate to 2 or less on the line of 2.54 μm in the width direction of the copper foil substrate, it is possible to improve the wettability of the roughened layer to the surface of the insulating substrate, etc. method. Therefore, there are, for example, (i) performing the silane coupling treatment so that the silane coupling agent layer is uniformly formed on the roughened layer, (ii) orienting the silane molecules in the silane coupling agent layer regularly. A method such as silane coupling treatment is performed. As a specific example of (i), there is a method of adding alcohol to an aqueous solution of a silane coupling agent; Before the time extension method etc.
(2)基底层的形成工序(2) Formation process of base layer
根据需要在粗面化层上形成含有Ni的基底层。An underlayer containing Ni is formed on the rough-surfaced layer as needed.
(3)耐热处理层的形成工序(3) Formation process of heat-resistant treatment layer
根据需要在粗面化层上或基底层上形成含有Zn的耐热处理层。A heat-resistant treatment layer containing Zn is formed on the roughened layer or on the base layer as needed.
(4)防锈处理层的形成工序(4) Formation process of anti-rust treatment layer
根据需要而将形成有所述层的铜箔浸于pH值低于3.5的含有Cr化合物的水溶液,并以0.3A/dm2以上的电流密度进行镀铬处理,由此在粗面化层上、基底层上或耐热处理层上形成防锈处理层。If necessary, the copper foil on which the layer is formed is immersed in an aqueous solution containing a Cr compound with a pH value lower than 3.5, and a chromium plating treatment is performed at a current density of 0.3 A/dm 2 or more, whereby on the roughened layer, An anti-rust treatment layer is formed on the base layer or on the heat-resistant treatment layer.
(5)硅烷偶联剂层的形成工序(5) Formation process of silane coupling agent layer
在粗面化层上、基底层上、耐热处理层上或防锈处理层上形成硅烷偶联剂层。A silane coupling agent layer is formed on the roughened layer, on the base layer, on the heat-resistant treatment layer, or on the antirust treatment layer.
〔覆铜层叠板的制造〕〔Manufacture of copper-clad laminates〕
本实施方式的覆铜层叠板通过如下的工序来制造。The copper-clad laminate of this embodiment is manufactured through the following steps.
(1)表面处理铜箔的制作(1) Production of surface-treated copper foil
遵照所述(1)至(5)来制作表面处理铜箔。Surface-treated copper foil was produced in accordance with (1) to (5) above.
(2)覆铜层叠板的制造(层叠)工序(2) Manufacturing (lamination) process of copper-clad laminates
将以上制作的表面处理铜箔与绝缘基板重叠在一起,使构成表面处理铜箔的硅烷偶联剂层的表面与绝缘基板的贴合面相对,之后进行加热及加压处理而使两者密接,由此来制造覆铜层叠板。Lay the surface-treated copper foil and the insulating substrate prepared above together, make the surface of the silane coupling agent layer constituting the surface-treated copper foil face the bonding surface of the insulating substrate, and then heat and press to make the two adhere , thereby manufacturing a copper-clad laminate.
需要说明的是,所述内容仅表示了本发明的实施方式的实例,可在不脱离本发明主旨的范围内进行各种变更。In addition, the said content shows the example of embodiment of this invention only, Various changes are possible in the range which does not deviate from the summary of this invention.
实施例Example
(实施例1)(Example 1)
在下述条件下将表面处理铜箔制作成厚度为18μm的未粗化(表面粗糙度Rz约为0.8μm)的铜箔基体。The surface-treated copper foil was prepared as a non-roughened (surface roughness Rz about 0.8 μm) copper foil substrate with a thickness of 18 μm under the following conditions.
(1)粗面化层的形成(1) Formation of roughened layer
针对铜箔基体表面的粗面化处理以如下顺序进行而形成粗面化层:在表1的条件下进行粗面化电镀处理1,接着进行以下所示的粗面化电镀处理2。The roughening treatment on the surface of the copper foil base was performed in the following order: roughening plating treatment 1 was performed under the conditions in Table 1, and then roughening plating treatment 2 shown below was performed to form a roughened layer.
(粗面化电镀处理2)(rough surface plating treatment 2)
硫酸铜:以铜浓度计13至72g/LCopper sulfate: 13 to 72g/L in terms of copper concentration
硫酸浓度:26至133g/LSulfuric acid concentration: 26 to 133g/L
液温:18至67℃Liquid temperature: 18 to 67°C
电流密度:3至67A/dm2 Current density: 3 to 67A/dm 2
处理时间:1秒至1分钟55秒Processing time: 1 second to 1 minute 55 seconds
(2)含有Ni的基底层的形成(2) Formation of base layer containing Ni
在铜箔基体的表面形成粗面化层后,在粗面化层上以下述所示的镀镍条件来进行电镀,由此形成基底层(Ni的附着量为0.06mg/dm2)。After forming a roughened layer on the surface of the copper foil base, electroplating was performed on the roughened layer under the nickel plating conditions shown below to form an underlayer (Ni deposition amount: 0.06 mg/dm 2 ).
<镀镍条件><Nickel Plating Conditions>
硫酸镍:以镍金属计5.0g/LNickel sulfate: 5.0g/L based on nickel metal
过硫酸铵40.0g/LAmmonium persulfate 40.0g/L
硼酸28.5g/LBoric acid 28.5g/L
电流密度1.5A/dm2 Current density 1.5A/dm 2
pH值3.8pH 3.8
温度28.5℃Temperature 28.5°C
时间1秒至2分钟Time 1 second to 2 minutes
(3)含有Zn的耐热处理层的形成(3) Formation of Zn-containing heat-resistant treatment layer
形成基底层后,在该基底层上以下述所示的镀锌条件来进行电镀,由此形成耐热处理层(Zn的附着量:0.05mg/dm2)。After forming the base layer, electroplating was performed on the base layer under the galvanizing conditions shown below to form a heat-resistant treatment layer (Zn deposition amount: 0.05 mg/dm 2 ).
<镀锌条件><Galvanizing condition>
硫酸锌七水合物1至30g/LZinc sulfate heptahydrate 1 to 30g/L
氢氧化钠10至300g/LSodium hydroxide 10 to 300g/L
电流密度0.1至10A/dm2 Current density 0.1 to 10A/dm 2
温度5至60℃Temperature 5 to 60°C
时间1秒至2分钟Time 1 second to 2 minutes
(4)含有Cr的防锈处理层的形成(4) Formation of antirust treatment layer containing Cr
形成耐热处理层后,在该耐热处理层上以下述的镀铬处理条件来进行处理,由此形成防锈处理层(Cr的附着量:0.02mg/dm2)。After the heat-resistant treatment layer was formed, the heat-resistant treatment layer was treated under the following chromium plating treatment conditions to form a rust-proof treatment layer (amount of deposited Cr: 0.02 mg/dm 2 ).
<镀铬条件><Chrome plating condition>
(镀铬浴)(chrome bath)
铬酸酐CrO3 2.5g/LChromic anhydride CrO 3 2.5g/L
pH值2.5pH 2.5
电流密度0.5A/dm2 Current density 0.5A/dm 2
温度15至45℃Temperature 15 to 45°C
时间1秒至2分钟Time 1 second to 2 minutes
(5)硅烷偶联剂层的形成(5) Formation of silane coupling agent layer
形成防锈处理层后,在该防锈处理层上,以表2所示的条件向硅烷偶联剂水溶液添加甲醇或乙醇,并涂布已调整为规定的pH值的处理液。其后,以规定的时间进行保存,之后利用暖风进行干燥,由此形成表3所示的硅烷附着量的硅烷偶联剂层。需要说明的是,表3中的标以下划线的数值表示本发明的适当范围外的数值。After the antirust treatment layer was formed, methanol or ethanol was added to the silane coupling agent aqueous solution under the conditions shown in Table 2 on the antirust treatment layer, and the treatment solution adjusted to a predetermined pH value was applied. Thereafter, it was stored for a predetermined time, and then dried with warm air to form a silane coupling agent layer having a silane adhesion amount shown in Table 3. In addition, the underlined numerical value in Table 3 represents the numerical value outside the suitable range of this invention.
[表2][Table 2]
(实施例2至实施例18)(Example 2 to Example 18)
粗面化电镀处理1是根据表1的内容来进行,硅烷偶联剂处理是根据表2的内容来进行,除此以外与实施例1同样地实施处理。The surface roughening plating process 1 was performed based on the content of Table 1, and the silane coupling agent process was performed based on the content of Table 2, and it processed similarly to Example 1 except having performed it.
(比较例1至比较例7以及比较例9至比较例14)(Comparative Example 1 to Comparative Example 7 and Comparative Example 9 to Comparative Example 14)
粗面化电镀处理1是根据表1的内容来进行,硅烷偶联剂处理是根据表2的内容来进行,除此以外与实施例1同样地实施处理。The surface roughening plating process 1 was performed based on the content of Table 1, and the silane coupling agent process was performed based on the content of Table 2, and it processed similarly to Example 1 except having performed it.
〔比较例8〕[Comparative Example 8]
使用辊状液晶聚合物膜(由Kuraray株式会社制造的Vecster(注册商标)CT-Z),以10分钟的处理时间浸于氢氧化钾溶液(液温80℃),然后进行蚀刻,进行粗面化处理。接着,通过下述的无电镀铜浴而使无电镀铜层形成于经粗面化处理的热塑性树脂膜。Use a roll-shaped liquid crystal polymer film (Vecster (registered trademark) CT-Z manufactured by Kuraray Co., Ltd.), immerse in a potassium hydroxide solution (liquid temperature 80° C.) for 10 minutes, and then etch to roughen the surface. processing. Next, an electroless copper plating layer was formed on the roughened thermoplastic resin film through the following electroless copper plating bath.
<无电镀铜浴><Electroless Copper Plating Bath>
硫酸铜·五水合物(以铜成分计)19g/LCopper sulfate pentahydrate (based on copper content) 19g/L
HEEDTA(螯合剂)50g/LHEEDTA (chelating agent) 50g/L
亚膦酸钠(还原剂)30g/LSodium phosphonite (reducing agent) 30g/L
氯化钠20g/LSodium chloride 20g/L
磷酸氢二钠15g/LDisodium hydrogen phosphate 15g/L
其后,以镀铜层整体的厚度为20μm的方式形成电镀铜层,所述镀铜层包含利用硫酸铜浴而形成于热塑性树脂膜上的无电镀铜层。另外,比较例8是在满足专利文献1所记载的发明范围的条件下制作而成的。Thereafter, an electroless copper plating layer including an electroless copper plating layer formed on a thermoplastic resin film using a copper sulfate bath was formed so that the thickness of the entire copper plating layer was 20 μm. In addition, Comparative Example 8 was produced under conditions satisfying the scope of the invention described in Patent Document 1.
试验片的特性评价Characteristic evaluation of test piece
针对各试验片进行各种测定及评价,其结果如表3所示。Table 3 shows the results of various measurements and evaluations for each test piece.
(1)线长比Da/Db以及凹凸表面的凹凸的平均高低差H的测定(1) Measurement of the line length ratio Da/Db and the average height difference H of the uneven surface
在与图3中的双箭头所示的铜箔基体面(面方向P)正交的剖面,将沿所述粗面化层的凹凸表面120而测定的沿面长度Da相对于沿所述铜箔基体110的面而测定的沿面长度Db之比Da/Db作为线长比。若该剖面上粗面化层的凹凸表面形成具有更多或更大的凹凸的形状,则线长比会变大。In the section perpendicular to the copper foil substrate surface (plane direction P) shown by the double arrow in FIG. 3, the creeping length Da measured along the uneven surface 120 of the roughened layer is relative to The ratio Da/Db of the length Db along the surface measured on the surface of the substrate 110 is defined as the line length ratio. If the uneven surface of the roughened layer on the cross section has more or larger unevenness, the line length ratio will increase.
通过离子研磨装置(日立制作所制造:IM4000)对各试验片进行处理,并使用扫描型电子显微镜(SEM:日立制作所制造:SU8020)观察经处理的各试验片的剖面,然后根据以下所示的顺序来测定所述的线长比Da/Db。根据以10000倍的倍率放大(本案的图像内视野的实际宽度为12.7μm)的观察图像来计算。使用图像分析软件Winroof(三谷商事)来分析SEM的观察图像,由此测定如图3中的粗线所示的粗面化层的凹凸表面上的沿面长度Da。另外,也可使用其他图像分析软件而以相同的方式进行测定。关于SEM的倍率,优选为使SEM图像的宽度处于5至15μm的范围。在本案中,在10处视野分别测定Dan/Dbn(n=1至10),并将其平均值作为Da/Db。Each test piece was processed by an ion milling device (manufactured by Hitachi: IM4000), and the cross-section of each treated test piece was observed using a scanning electron microscope (SEM: manufactured by Hitachi: SU8020), and then according to the following order to determine the line length ratio Da/Db. The calculation is based on an observed image enlarged at a magnification of 10,000 times (the actual width of the field of view in the image in this case is 12.7 μm). The observation image of the SEM was analyzed using image analysis software Winroof (Mitani Corporation), thereby measuring the creepage length Da on the uneven surface of the roughened layer shown by the thick line in FIG. 3 . In addition, other image analysis software can also be used to perform the measurement in the same manner. Regarding the magnification of the SEM, it is preferable that the width of the SEM image is in the range of 5 to 15 μm. In this case, Dan/Dbn (n=1 to 10) was measured at 10 visual fields, and the average value thereof was taken as Da/Db.
接着,以如下的方式测定凹凸表面的平均高低差。首先,将观察倍率放大至200倍(本案的图像内视野的实际宽度为63.5μm),在任意位置,在误差±1°的范围内使凹凸表面的延伸方向与画面的水平方向一致。接着,将观察倍率放大至10000倍(本案的图像内视野的实际宽度为12.7μm),将第1凹部的底部位置设为A点,该第1凹部的底部位置是任意位置在SEM图像内所显示出的、形成凹凸表面的凹凸中的最低点位置。然后,在除第1凹部以及与该第1凹部邻接的凹部以外的剩余凹部中,将底部位置为最低点位置的第2凹部的底部位置设为B点。然后,将连结A点与B点而成的直线设为基线BL1(图4的(a))。其后,在放大至50000倍(本案的图像内视野的实际宽度为2.54μm)的SEM图像中,画出与基线BL1平行的基线BL2,其通过第3凹部的底部位置,该第3凹部的底部位置是在任意位置形成凹凸表面的凹凸中的最低点位置,将自基线BL2至沿垂直方向离得最远的凸部的顶点的距离设为高低差H并进行测定(图4的(b))。在本实施例中,在5处视野分别测定高低差并将其平均值作为平均高低差H。Next, the average height difference of the uneven surface was measured as follows. First, the observation magnification is enlarged to 200 times (the actual width of the field of view in the image in this case is 63.5 μm), and at any position, the extension direction of the concave-convex surface is consistent with the horizontal direction of the screen within the error range of ±1°. Next, the observation magnification is enlarged to 10,000 times (the actual width of the field of view in the image of this case is 12.7 μm), and the bottom position of the first concave portion is set as point A. The bottom position of the first concave portion is an arbitrary position in the SEM image. Shows the position of the lowest point in the bumps that form the bumpy surface. Then, among the remaining concave portions other than the first concave portion and the concave portion adjacent to the first concave portion, the bottom position of the second concave portion whose bottom position is the lowest point position is defined as point B. And let the straight line which connects point A and point B be base line BL1 ((a) of FIG. 4). Thereafter, in the SEM image enlarged to 50,000 times (the actual width of the field of view in the image of this case is 2.54 μm), draw the baseline BL2 parallel to the baseline BL1, which passes through the bottom position of the third concave portion, and the bottom of the third concave portion The bottom position is the position of the lowest point among the concavities and convexities that form the concavo-convex surface at any position, and the distance from the base line BL2 to the apex of the convex part that is farthest in the vertical direction is set as the height difference H and is measured ((b of FIG. 4 )). In the present embodiment, the height difference is measured at five fields of view, and the average value thereof is taken as the average height difference H.
(2)粗面化层与绝缘基材的界面的气泡数量(2) The number of air bubbles at the interface between the roughened layer and the insulating substrate
如图5所示,粗面化层43与绝缘基板42的界面的气泡数量按照以下所示的顺序进行测定。首先使用压合机在绝缘基板制造厂家所推荐的标准压合条件下压合绝缘基板42(预浸料层)与铜箔43而制作层叠体(在本案中,使用松下株式会社的MEGTRON6:R-5670作为绝缘基板42,并以如下压合条件进行层叠:压合温度为200℃、压合压力为35kgf/cm2,压合时间为160分钟)。接着,使用所述离子研磨装置对所述层叠体进行处理,并利用所述扫描型电子显微镜将经处理的层叠体的剖面放大至50000倍(本案的图像内视野的实际宽度为2.54μm),并观察层叠体的粗面化层43与绝缘基板42的界面。如图5所示,在10处分别测定存在于宽度为2.54μm的线上的粗面化层43与绝缘基板42的界面的气泡41的数量,并将10处的气泡的数量的平均值作为粗面化层43与绝缘基板42的界面的气泡数量Vi。所谓本案中的气泡,是指在粗面化层与绝缘基板的界面未填充绝缘基板的区域,其大小以长径计为1.0μm以下。As shown in FIG. 5 , the number of bubbles at the interface between the rough-surfaced layer 43 and the insulating substrate 42 was measured in the following procedure. First, use a press machine to press the insulating substrate 42 (prepreg layer) and copper foil 43 under the standard pressing conditions recommended by the insulating substrate manufacturer to produce a laminate (in this case, Panasonic Corporation MEGTRON6:R -5670 was used as the insulating substrate 42, and laminated under the following bonding conditions: bonding temperature of 200°C, bonding pressure of 35kgf/cm 2 , and bonding time of 160 minutes). Next, use the ion milling device to process the laminated body, and use the scanning electron microscope to magnify the cross-section of the processed laminated body to 50,000 times (the actual width of the field of view in the image in this case is 2.54 μm), And the interface of the rough-surfaced layer 43 of a laminated body, and the insulating substrate 42 was observed. As shown in FIG. 5 , the number of air bubbles 41 present at the interface between the rough-surfaced layer 43 and the insulating substrate 42 on a line having a width of 2.54 μm was measured at 10 places, and the average value of the number of air bubbles at 10 places was taken as The number Vi of bubbles at the interface between the rough-surfaced layer 43 and the insulating substrate 42 . The bubbles in this case refer to regions where the insulating substrate is not filled at the interface between the roughened layer and the insulating substrate, and the size thereof is 1.0 μm or less in terms of the major axis.
(3)硅烷附着量的测定(3) Determination of silane adhesion amount
利用荧光X射线分析装置(株式会社RIGAKU制造的ZSXPrimus,分析直径:Φ35mm)进行分析。Analysis was performed with a fluorescent X-ray analyzer (ZSX Primus manufactured by RIGAKU Co., Ltd., analysis diameter: Φ35 mm).
(4)绝缘基板密接后的线长比Da'/Db以及凹凸表面的凹凸的平均高低差H'的测定(4) Measurement of the line length ratio Da'/Db after the insulating substrate is closely bonded and the average height difference H' of the uneven surface
在使各铜箔与绝缘基板粘接后,线长比Da'/Db以及凹凸表面的凹凸的平均高低差H'以与所述Da/Db以及H的测定相同的方式来进行。After bonding each copper foil to an insulating substrate, the line length ratio Da'/Db and the average height difference H' of the uneven surface were measured in the same manner as the measurement of Da/Db and H described above.
(5)传输特性(高频下的传输损耗的测定)(5) Transmission characteristics (measurement of transmission loss at high frequencies)
在使各铜箔与绝缘基板粘接后,制作传输特性测定用样品而对高频带中的传输损耗进行测定。使用市售的聚苯醚系绝缘基板(松下株式会社制造的MEGTRON 6)作为绝缘基板。传输损耗测定用基板采用带状线构造,导体长度为400mm,导体厚度为18μm,并且导体宽度调整为0.14mm,整体的厚度调整为0.31mm,特性阻抗调整为50Ω。关于评价,使用矢量网络分析仪E8363B(KEYSIGHT TECHNOLOGIES公司制造)来测定10GHz以及40GHz的传输损耗。将在导体长度为400mm时所测定的传输损耗换算成导体长度为1000mm时的值,并将该值作为传输损耗的测定结果,单位为dB/m。具体而言,将导体长度为400mm时所测定的传输损耗的值乘以2.5后所得到的值作为传输损耗的测定值。结果如表3所示,关于传输特性,在10GHz下将传输损耗低于19.5dB/m的情况视为合格,且在40GHz下将传输损耗低于66.0dB/m的情况视为合格。After bonding each copper foil to an insulating substrate, a sample for transmission characteristic measurement was produced, and the transmission loss in the high frequency band was measured. A commercially available polyphenylene ether-based insulating substrate (MEGTRON 6 manufactured by Panasonic Corporation) was used as the insulating substrate. The substrate for measurement of transmission loss adopts a stripline structure, the conductor length is 400mm, the conductor thickness is 18μm, the conductor width is adjusted to 0.14mm, the overall thickness is adjusted to 0.31mm, and the characteristic impedance is adjusted to 50Ω. For evaluation, transmission loss at 10 GHz and 40 GHz was measured using a vector network analyzer E8363B (manufactured by KEYSIGHT TECHNOLOGIES). The transmission loss measured when the conductor length is 400mm is converted into the value when the conductor length is 1000mm, and this value is taken as the measurement result of transmission loss, and the unit is dB/m. Specifically, the value obtained by multiplying the value of the transmission loss measured when the conductor length was 400 mm by 2.5 was used as the measured value of the transmission loss. The results are shown in Table 3. Regarding the transmission characteristics, the case where the transmission loss was less than 19.5 dB/m at 10 GHz was considered acceptable, and the case where the transmission loss was less than 66.0 dB/m at 40 GHz was considered acceptable.
(6)密接强度(6) Adhesive strength
测定表面处理铜箔与绝缘基板的密接强度。使用市售的聚苯醚基板作为绝缘基板。绝缘(树脂)基板的固化条件设为210℃、1小时。使用万能材料试验机(TENSILON,株式会社A&D制造)使铜箔与绝缘基板粘接,之后将试验片蚀刻加工成10mm宽度的电路配线,并通过双面胶带将绝缘侧固定于不锈钢板,然后使电路配线沿90度方向以50mm/分钟的速度进行剥离,从而求出密接强度。关于初始密接性,将剥离强度为0.4kN/m以上的情况视为合格,将剥离强度低于0.4kN/m的情况视为不合格。The adhesion strength between the surface-treated copper foil and the insulating substrate was measured. A commercially available polyphenylene ether substrate was used as the insulating substrate. The curing conditions of the insulating (resin) substrate were set at 210° C. for 1 hour. The copper foil was bonded to the insulating substrate using a universal material testing machine (TENSILON, manufactured by A&D Co., Ltd.), and then the test piece was etched into a circuit wiring with a width of 10 mm, and the insulating side was fixed to the stainless steel plate with double-sided tape, and then The circuit wiring was peeled at a speed of 50 mm/min in a 90-degree direction to obtain the adhesion strength. Regarding the initial stage adhesiveness, the case where the peeling strength was 0.4 kN/m or more was regarded as acceptable, and the case where the peeling strength was less than 0.4 kN/m was regarded as unacceptable.
(7)回流耐热性(铜箔与预浸料层之间)(7) Reflow heat resistance (between copper foil and prepreg layer)
首先,对回流耐热试验(铜箔与预浸料层之间)的试验片的制作方法进行说明。在两面使铜箔层叠而制作回流试验片(铜箔与预浸料层之间)。在本案中,回流试验片(铜箔与预浸料层之间)的尺寸为100mm×100mm。接着,将制成的试验片通入至回流炉中,并以顶温度为260℃且时间为10秒钟的加热条件通10次。在所述条件下加热之后,产生膨胀者用显微镜观察膨胀区域的剖面,从而确认铜箔与预浸料层之间是否存在层间剥离。将铜箔与预浸料层之间未发生层间剥离者判定为“○(合格)”,将铜箔与预浸料层之间有1处发生层间剥离者判定为“Δ(合格)”,将铜箔与预浸料层之间有2处以上发生层间剥离者判定为“×(不合格)”。另外,回流试验的内容依据JIS C 60068-2-58。First, the preparation method of the test piece of the reflow heat resistance test (between copper foil and a prepreg layer) is demonstrated. Copper foils were laminated on both sides to produce reflow test pieces (between the copper foil and the prepreg layer). In this case, the size of the reflow test piece (between the copper foil and the prepreg layer) is 100mm×100mm. Next, the prepared test piece was passed into a reflow furnace, and passed 10 times under the heating conditions of a top temperature of 260° C. and a time of 10 seconds. After heating under the above-mentioned conditions, those who swelled observed the section of the swollen region with a microscope to check whether there was delamination between the copper foil and the prepreg layer. The case where delamination did not occur between the copper foil and the prepreg layer was judged as "○ (pass)", and the case where delamination occurred at one point between the copper foil and the prepreg layer was judged as "Δ (pass) ”, and the case where delamination occurred at two or more places between the copper foil and the prepreg layer was judged as “× (unacceptable)”. In addition, the content of the reflow test is based on JIS C 60068-2-58.
(8)回流耐热性(芯层与预浸料层之间)(8) Reflow heat resistance (between the core layer and the prepreg layer)
下面对回流耐热试验(芯层与预浸料层之间)的试验片的制作方法进行说明。将在两面层叠有铜箔的绝缘基板作为芯层。利用氯化铜(II)溶液等对芯层进行蚀刻而使所有铜箔被溶解。通过在经蚀刻的芯层的两面层叠作为绝缘基板的预浸料层与铜箔来制作回流试验片。在本案中,回流试验片(芯层与预浸料层之间)的尺寸为100mm×100mm。Next, the preparation method of the test piece for the reflow heat resistance test (between the core layer and the prepreg layer) will be described. An insulating substrate laminated with copper foil on both sides was used as a core layer. The core layer is etched with a copper(II) chloride solution or the like to dissolve all the copper foil. A reflow test piece was produced by laminating a prepreg layer and copper foil as an insulating substrate on both surfaces of the etched core layer. In this case, the size of the reflow test piece (between the core layer and the prepreg layer) is 100mm×100mm.
接着,将制成的试验片通入至回流炉中,并以顶温度为260℃且时间为10秒钟的加热条件通10次。在所述条件下加热之后,将芯层与预浸料层之间未发生层间剥离者判定为“○(合格)”,将芯层与预浸料层之间有1处发生层间剥离者判定为“Δ(合格)”,将芯层与预浸料层之间有2处以上发生层间剥离者判定为“×(不合格)”。另外,回流试验的内容依据JIS C 60068-2-58。Next, the prepared test piece was passed into a reflow furnace, and passed 10 times under the heating conditions of a top temperature of 260° C. and a time of 10 seconds. After heating under the above conditions, the case where delamination did not occur between the core layer and the prepreg layer was judged as "○ (pass)", and delamination occurred at one point between the core layer and the prepreg layer The test result was judged as "Δ (pass)", and the case where delamination occurred at two or more places between the core layer and the prepreg layer was judged as "x (failure)". In addition, the content of the reflow test is based on JIS C 60068-2-58.
由表3明确,实施例1至实施例18在与绝缘基板的密接性、传输特性以及回流耐热性的所有性能方面均为合格等级。另一方面,关于比较例1,其线长比Da/Db以及Da'/Db小,凹凸表面的凹凸的平均高低差H以及H'也低,所以密接强度低,回流耐热性也差。关于比较例2,其线长比Da/Db以及Da'/Db大,凹凸表面的凹凸的平均高低差H以及H'也高,所以传输损耗大,传输特性差。关于比较例3,其线长比Da/Db以及Da/Db'小,硅烷附着量也少,所以回流耐热性差。关于比较例4,其线长比Da/Db以及Da'/Db小,凹凸表面的凹凸的平均高低差H以及H'低,硅烷附着量多,所以密接强度低。关于比较例5至比较例7,其线长比Da/Db以及Da/Db'大,平均高低差H以及H'大,此外粗面化层与绝缘基板的界面的气泡数量多,所以回流耐热性差。关于比较例8,其线长比Da/Db以及Da'/Db小,凹凸表面的凹凸的平均高低差H低,所以密接强度低。关于比较例9至比较例14,其线长比Da/Db以及Da'/Db大,特别是比较例9至比较例11中,凹凸表面的凹凸的平均高低差H以及H'也高,所以传输损耗大,传输特性差。产业上的可利用性As is clear from Table 3, Examples 1 to 18 are acceptable grades in all performances of adhesion to an insulating substrate, transport characteristics, and reflow heat resistance. On the other hand, in Comparative Example 1, the line length ratios Da/Db and Da'/Db are small, and the average height differences H and H' of the uneven surface are also low, so the adhesion strength is low and the reflow heat resistance is also poor. In Comparative Example 2, the line length ratios Da/Db and Da'/Db are large, and the average height differences H and H' of the uneven surface are also high, so the transmission loss is large and the transmission characteristics are poor. In Comparative Example 3, the line length ratios Da/Db and Da/Db' were small, and the amount of silane attached was also small, so the reflow heat resistance was poor. In Comparative Example 4, the line length ratios Da/Db and Da'/Db were small, the average height differences H and H' of the uneven surface were low, and the amount of silane adhered was large, so the adhesion strength was low. Regarding Comparative Examples 5 to 7, the line length ratios Da/Db and Da/Db' are large, the average height differences H and H' are large, and the number of bubbles at the interface between the roughened layer and the insulating substrate is large, so the reflow resistance Poor heat. In Comparative Example 8, the line length ratios Da/Db and Da'/Db were small, and the average height difference H of the unevenness on the uneven surface was low, so the adhesion strength was low. Regarding Comparative Examples 9 to 14, the line length ratios Da/Db and Da'/Db are large, and especially in Comparative Examples 9 to 11, the average height difference H and H' of the uneven surface are also high, so The transmission loss is large and the transmission characteristics are poor. Industrial availability
根据本发明,能提供一种确保与绝缘基板的充分的密接性且兼具高度的回流耐热性与传输特性的表面处理铜箔以及使用该表面处理铜箔制造而成的覆铜层叠板,所述绝缘基板因相对介电常数和介电损耗角正切低而介电特性优异,从而能应对高速传输处理大容量信息的支持高频化信息通信设备的高性能化及高功能化。According to the present invention, it is possible to provide a surface-treated copper foil that ensures sufficient adhesion to an insulating substrate and has both high reflow heat resistance and transmission characteristics, and a copper-clad laminate manufactured using the surface-treated copper foil, The insulating substrate has excellent dielectric properties due to its low relative permittivity and dielectric loss tangent, and can cope with high-performance and high-functioning information communication equipment that supports high-frequency transmission and processing of large-capacity information.
附图标记说明:Explanation of reference signs:
11 颈缩形状11 neck shape
110 铜箔基体110 copper foil substrate
120 粗面化层120 roughening layers
Da 沿粗面化层的凹凸表面而测定的沿面长度Da is the creepage length measured along the uneven surface of the roughened layer
Db 沿所述铜箔基体面而测定的沿面长度Db is the creepage length measured along the surface of the copper foil substrate
P 基板的宽度P Width of substrate
41 气泡41 bubbles
42 绝缘基板42 insulating substrate
43 粗面化层。43 roughening layer.
Claims (10)
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| JP2016095049 | 2016-05-11 | ||
| PCT/JP2017/002145 WO2017138338A1 (en) | 2016-02-10 | 2017-01-23 | Surface-treated copper foil and copper-clad laminate produced using same |
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| KR (1) | KR102230999B1 (en) |
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Also Published As
| Publication number | Publication date |
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| TW201800242A (en) | 2018-01-01 |
| TWI704048B (en) | 2020-09-11 |
| JPWO2017138338A1 (en) | 2018-02-22 |
| CN108603303B (en) | 2020-11-13 |
| KR20180112769A (en) | 2018-10-12 |
| JP6248231B1 (en) | 2017-12-13 |
| KR102230999B1 (en) | 2021-03-22 |
| WO2017138338A1 (en) | 2017-08-17 |
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