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TWI876541B - Manufacturing method of roughened copper foil - Google Patents

Manufacturing method of roughened copper foil Download PDF

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Publication number
TWI876541B
TWI876541B TW112135618A TW112135618A TWI876541B TW I876541 B TWI876541 B TW I876541B TW 112135618 A TW112135618 A TW 112135618A TW 112135618 A TW112135618 A TW 112135618A TW I876541 B TWI876541 B TW I876541B
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Taiwan
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copper foil
manufacturing
copper
present
roughened
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TW112135618A
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Chinese (zh)
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TW202513896A (en
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廖德超
鄭維昇
謝育淇
張嘉珊
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南亞塑膠工業股份有限公司
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Priority to TW112135618A priority Critical patent/TWI876541B/en
Priority to CN202311363565.1A priority patent/CN119663386A/en
Priority to US18/493,823 priority patent/US20250092555A1/en
Priority to JP2023212567A priority patent/JP7699193B2/en
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Publication of TWI876541B publication Critical patent/TWI876541B/en
Publication of TW202513896A publication Critical patent/TW202513896A/en

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    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/38Electroplating: Baths therefor from solutions of copper
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48After-treatment of electroplated surfaces
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60Electroplating characterised by the structure or texture of the layers
    • C25D5/605Surface topography of the layers, e.g. rough, dendritic or nodular layers
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/06Wires; Strips; Foils
    • C25D7/0614Strips or foils

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)

Abstract

The manufacturing method of the roughened copper foil includes the following steps. A copper foil is provided. An electrolytic process is performed to form a roughening layer on the copper foil. An electrolyte solution in the electrolysis process includes copper ions between 0.1g/L and 20g/L, sulfate ions between 30g/L and 120g/L, and coordination compound between 0.1g/L and 10g/L.

Description

粗化銅箔的製造方法Method for producing roughened copper foil

本發明是有關於一種粗化銅箔的製造方法。The present invention relates to a method for manufacturing a roughened copper foil.

隨著印刷電路板(PCB)細線路的發展,銅箔表面的粗化處理層需要變得更細,但同時須維持銅箔與絕緣樹脂的高附著力,因此如何在銅箔上製造出低粗糙度高附著力的粗化處理層實為一種挑戰。With the development of fine lines on printed circuit boards (PCBs), the roughening layer on the surface of copper foil needs to become finer, but at the same time, the high adhesion between the copper foil and the insulating resin must be maintained. Therefore, how to produce a roughening layer with low roughness and high adhesion on the copper foil is a challenge.

本發明提供一種粗化銅箔的製造方法,其可以在銅箔上製造出低粗糙度高附著力的粗化處理層。The present invention provides a method for manufacturing a roughened copper foil, which can manufacture a roughened layer with low roughness and high adhesion on the copper foil.

本發明的粗化銅箔的製造方法包括以下步驟。提供銅箔。執行電解製程,以於銅箔上形成粗化處理層。電解製程中的電解液包括介於0.1g/L至20g/L之間的銅離子、介於30g/L至120g/L之間的硫酸根離子以及介於0.1g/L至10g/L之間的錯合物。The method for manufacturing a roughened copper foil of the present invention comprises the following steps: providing a copper foil; performing an electrolytic process to form a roughening treatment layer on the copper foil; the electrolyte in the electrolytic process comprises copper ions between 0.1 g/L and 20 g/L, sulfate ions between 30 g/L and 120 g/L, and complex between 0.1 g/L and 10 g/L.

在本發明的一實施例中,上述的錯合物包括苯并三唑類化合物、丙烷磺酸類化合物、乙二胺四乙酸或其組合。In one embodiment of the present invention, the complex comprises benzotriazole compounds, propane sulfonic acid compounds, ethylenediaminetetraacetic acid or a combination thereof.

在本發明的一實施例中,上述的電解液中沒有進一步加入其他金屬離子。In one embodiment of the present invention, no other metal ions are further added to the above-mentioned electrolyte.

在本發明的一實施例中,上述的電解製程包括第一電解製程與第二電解製程,且第一電解製程中所使用的第一銅離子濃度小於第二電解製程中所使用的第二銅離子濃度。In one embodiment of the present invention, the electrolysis process includes a first electrolysis process and a second electrolysis process, and the first copper ion concentration used in the first electrolysis process is less than the second copper ion concentration used in the second electrolysis process.

在本發明的一實施例中,上述的第一銅離子濃度介於0.1g/L至10g/L之間,且所述第二銅離子濃度介於1g/L至20g/L之間。In one embodiment of the present invention, the first copper ion concentration is between 0.1 g/L and 10 g/L, and the second copper ion concentration is between 1 g/L and 20 g/L.

在本發明的一實施例中,執行上述的電解製程之後更包括執行矽烷化處理製程。In one embodiment of the present invention, performing the electrolysis process further includes performing a silanization process.

在本發明的一實施例中,上述的電解製程使用直流電。In one embodiment of the present invention, the electrolysis process uses direct current.

在本發明的一實施例中,上述的電解製程的溫度介於25℃至60℃之間。In one embodiment of the present invention, the temperature of the electrolysis process is between 25°C and 60°C.

在本發明的一實施例中,上述的電解製程的電流密度介於1A/dm 2至120A/dm 2之間。 In one embodiment of the present invention, the current density of the electrolysis process is between 1 A/dm 2 and 120 A/dm 2 .

在本發明的一實施例中,上述的電解製程的時間介於1秒至45秒之間。In one embodiment of the present invention, the duration of the electrolysis process is between 1 second and 45 seconds.

基於上述,本發明改良了用於形成粗化處理層的電解液,使其包括介於0.1g/L至20g/L之間的銅離子、介於30g/L至120g/L之間的硫酸根離子以及介於0.1g/L至10g/L之間的錯合物,如此一來,可以使構成粗化處理層的銅瘤以優異的成核與成長機制生成,因此可以在銅箔上製造出低粗糙度高附著力的粗化處理層。Based on the above, the present invention improves the electrolyte used to form the roughening treatment layer, so that it includes copper ions between 0.1g/L and 20g/L, sulfate ions between 30g/L and 120g/L, and complexes between 0.1g/L and 10g/L. In this way, the copper nodules constituting the roughening treatment layer can be generated with an excellent nucleation and growth mechanism, so that a roughening treatment layer with low roughness and high adhesion can be manufactured on the copper foil.

為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above features and advantages of the present invention more clearly understood, embodiments are given below and described in detail with reference to the accompanying drawings.

在以下詳細描述中,為了說明而非限制,闡述揭示特定細節之示例性實施例以提供對本發明之各種原理之透徹理解。然而,本領域一般技術者將顯而易見的是,得益於本揭示案,可在脫離本文所揭示特定細節的其他實施例中實踐本發明。此外,可省略對熟知裝置、方法、材料及其他具體細節之描述以免模糊對本發明之各種原理之描述。In the following detailed description, for the purpose of illustration and not limitation, exemplary embodiments that disclose specific details are described to provide a thorough understanding of the various principles of the present invention. However, it will be apparent to one of ordinary skill in the art that, with the benefit of this disclosure, the present invention may be practiced in other embodiments that depart from the specific details disclosed herein. In addition, descriptions of well-known devices, methods, materials, and other specific details may be omitted to avoid obscuring the description of the various principles of the present invention.

在本文中,由「一數值至另一數值」表示的範圍,是一種避免在說明書中一一列舉該範圍中的所有數值的概要性表示方式。因此,某一特定數值範圍的記載,涵蓋該數值範圍內的任意數值以及由該數值範圍內的任意數值界定出的較小數值範圍,如同在說明書中說明文寫出該任意數值和該較小數值範圍一樣。In this article, the range expressed by "a value to another value" is a summary expression method to avoid listing all the values in the range one by one in the specification. Therefore, the description of a specific numerical range covers any numerical value in the numerical range and the smaller numerical range defined by any numerical value in the numerical range, just as the arbitrary numerical value and the smaller numerical range are written in the description text in the specification.

除非另有說明,本說明書中用於數值範圍界定之術語「介於」,旨在涵蓋等於所述端點值以及所述端點值之間的範圍,例如尺寸範圍介於第一數值到第二數值之間,係指尺寸範圍可以涵蓋第一數值、第二數值與第一數值到第二數值之間的任何數值。Unless otherwise specified, the term "between" used in this specification to define a range of numerical values is intended to cover ranges equal to the endpoint values and between the endpoint values. For example, a size range is between a first value and a second value, which means that the size range can cover the first value, the second value, and any value between the first value and the second value.

在本文中,非限定之術語(如:可能、可以、例如或其他類似用語)為非必要或可選擇性之實施、包含、添加或存在。In this document, non-limiting terms (such as: may, could, for example, or other similar terms) refer to optional or necessary implementation, inclusion, addition, or presence.

除非另外定義,在此使用的所有術語(包括技術術語和科學術語)具有與本發明所屬技術領域中具有通常知識者或通常理解相同的含義。還將理解的是,術語(諸如在通常使用的字典中定義的那些)應解釋為具有與在相關技術背景中的含義一致的含義,並不應以理想化或過於正式的意義解釋,除非在此明確這樣定義。Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as those commonly known or commonly understood in the art to which the present invention belongs. It will also be understood that terms (such as those defined in commonly used dictionaries) should be interpreted as having a meaning consistent with that in the relevant technical context and should not be interpreted in an idealized or overly formal sense unless expressly defined as such herein.

在本實施例中,粗化銅箔例如是藉由下述步驟所製造。首先,提供銅箔,接著,執行電解製程,以於銅箔上形成粗化處理層,其中本發明改良了用於形成粗化處理層的電解液,使其包括介於0.1g/L至20g/L之間(例如是0.1g/L、1g/L、10g/L、20g/L或上述介於0.1g/L至20g/L之間的任意數值)的銅離子、介於30g/L至120g/L之間(例如是30g/L、50g/L、70g/L、90g/L、120g/L或上述介於30g/L至120g/L之間的任意數值)的硫酸根離子(SO 4 2-)及介於0.1g/L至10g/L之間(例如是0.1g/L、1g/L、3g/L、5g/L、7g/L、10g/L或上述介於0.1g/L至10g/L之間的任意數值)的錯合物,如此一來,可以使構成粗化處理層的銅瘤以優異的成核(nucleation)與成長(growth)機制生成,例如是快速的成核速率,因此可以在銅箔上製造出低粗糙度高附著力(高表面積與高剝離強度)的粗化處理層。在此,經由上述方式所形成的粗化處理層的表面粗糙度(如十點平均粗糙度,Rz)例如至少小於1微米(micrometer),且其上形成有上述粗化處理層的銅箔與絕緣樹脂(Preppreg)之間的剝離強度例如至少大於4lb/in。 In this embodiment, the roughened copper foil is manufactured, for example, by the following steps. First, a copper foil is provided, and then an electrolytic process is performed to form a roughening treatment layer on the copper foil, wherein the present invention improves the electrolyte used to form the roughening treatment layer so that it includes copper ions between 0.1 g/L and 20 g/L (for example, 0.1 g/L, 1 g/L, 10 g/L, 20 g/L or any value between 0.1 g/L and 20 g/L), sulfate ions (SO 4 2- ) and a complex between 0.1 g/L and 10 g/L (e.g., 0.1 g/L, 1 g/L, 3 g/L, 5 g/L, 7 g/L, 10 g/L or any value between 0.1 g/L and 10 g/L), so that the copper nodules constituting the roughening layer can be generated with an excellent nucleation and growth mechanism, such as a fast nucleation rate, so that a roughening layer with low roughness and high adhesion (high surface area and high peel strength) can be manufactured on the copper foil. Here, the surface roughness (such as ten-point average roughness, Rz) of the roughened layer formed by the above method is, for example, at least less than 1 micrometer, and the peel strength between the copper foil on which the roughened layer is formed and the insulating resin (Preppreg) is, for example, at least greater than 4 lb/in.

進一步而言,本發明的電解液中導入了錯合物,因此相較於目前僅使用硫酸銅電解液的電解銅箔而言,藉由錯合物與銅之間的錯合反應,使電解液中的二價銅離子(Cu 2+)可以形成其他價數的銅離子(如一價銅離子(Cu +)),以達到優異的成核與成長機制,優化銅瘤於三維方向的生成能力,舉例而言,本發明的錯合物包括苯并三唑(BTA)類化合物(離子液體)、丙烷磺酸類化合物、乙二胺四乙酸(EDTA)或其組合,其中苯并三唑類化合物例如選自羧基苯并三氮唑(CBTA)、1,2,3-苯并三唑、1-氯-1,2,3-苯并三唑、雙(N-2-乙基己基)胺基亞甲基-1,2,3-苯并三唑、雙(N-2-乙基己基)胺基亞甲基-1,2,3-甲苯三唑、雙(N-2-羥基乙基)胺基亞甲基-1,2,3-苯并三唑,而丙烷磺酸類化合物例如選自雙-(3-磺丙基)-二硫二鈉鹽(bis-(3-sulfopropyl)-disulfide disodium salt, SPS)、3-巰基-1-丙烷磺酸(3-mercapto-1-propanesulfonic acid, MPS),但本發明不限於此。 Furthermore, the electrolyte of the present invention introduces a complex, so compared with the electrolytic copper foil currently using only copper sulfate electrolyte, the divalent copper ions (Cu 2+ ) in the electrolyte can form copper ions of other valences (such as monovalent copper ions (Cu + )) to achieve excellent nucleation and growth mechanisms and optimize the ability of copper tumors to form in three dimensions. For example, the complex of the present invention includes benzotriazole (BTA) compounds (ionic liquids), propane sulfonic acid compounds, ethylenediaminetetraacetic acid (EDTA) or a combination thereof, wherein the benzotriazole compound is selected from carboxybenzotriazole (CBTA), 1,2,3-benzotriazole, 1-chloro-1,2,3-benzotriazole, The propane sulfonic acid compound is selected from bis-(3-sulfopropyl)-disulfide disodium salt (SPS) and 3-mercapto-1-propanesulfonic acid (MPS), but the present invention is not limited thereto.

在一些實施例中,本發明的粗化銅箔的製造方法可以應用至線路電路板上,但本發明不限於此。In some embodiments, the method for manufacturing the roughened copper foil of the present invention can be applied to a circuit board, but the present invention is not limited thereto.

在一些實施例中,電解液中沒有進一步加入其他金屬離子,舉例而言,本發明的電解液中不包括鐵(Fe)、鈷(Co)等金屬離子,亦即電解液中僅包括單一金屬離子(銅離子),但本發明不限於此。In some embodiments, no other metal ions are further added to the electrolyte. For example, the electrolyte of the present invention does not include metal ions such as iron (Fe) and cobalt (Co), that is, the electrolyte only includes a single metal ion (copper ion), but the present invention is not limited to this.

在一些實施例中,電解製程可以使用多段方式進行,以更有效地獲得所需的銅瘤,舉例而言,電解製程包括第一電解製程與第二電解製程,且第一電解製程中所使用的第一銅離子濃度小於第二電解製程中所使用的第二銅離子濃度,如此一來,可以先藉由第一電解製程使銅瘤於垂直方向上生長到所需程度(如樹枝狀生長)之後,再藉由第二電解製程加厚銅瘤的基底部分(靠近銅箔的部分),提升銅瘤與銅箔之間的附著力而不易剝落,其中第一銅離子濃度介於0.1/L至10g/L之間,且所述第二銅離子濃度介於1g/L至20g/L之間,但本發明不限於此。In some embodiments, the electrolysis process can be performed in multiple stages to more effectively obtain the desired copper nodules. For example, the electrolysis process includes a first electrolysis process and a second electrolysis process, and the first copper ion concentration used in the first electrolysis process is less than the second copper ion concentration used in the second electrolysis process. In this way, the copper nodules can be formed in the vertical direction by the first electrolysis process. After the copper nodule grows to a desired extent (such as tree-like growth), a second electrolytic process is used to thicken the base portion of the copper nodule (the portion close to the copper foil) to enhance the adhesion between the copper nodule and the copper foil and prevent it from peeling off. The first copper ion concentration is between 0.1/L and 10g/L, and the second copper ion concentration is between 1g/L and 20g/L, but the present invention is not limited thereto.

在此,銅瘤的尺寸與形狀等皆可以依照實際設計上需求而定,本發明不加以限制,只要可以使粗化處理層的表面粗糙度(Rz)至少小於1微米,且其上形成有上述粗化處理層的銅箔與絕緣樹脂(Preppreg)之間的剝離強度可以至少大於4lb/in皆屬於本發明的保護範圍。Here, the size and shape of the copper nodule can be determined according to actual design requirements, and the present invention is not limited thereto. As long as the surface roughness (Rz) of the roughened layer can be at least less than 1 micron, and the peel strength between the copper foil with the roughened layer formed thereon and the insulating resin (Preppreg) can be at least greater than 4 lb/in, it is within the protection scope of the present invention.

在一些實施例中,銅箔的厚度介於1.5微米至70微米之間,但本發明不限於此。In some embodiments, the thickness of the copper foil is between 1.5 μm and 70 μm, but the present invention is not limited thereto.

在一些實施例中,執行電解製程之後更包括執行矽烷化處理製程,以於所述粗化處理層相對於銅箔的表面上額外形成矽烷耦合層,因此可以進一步提升其後續與其他膜層之間的接合力,其中矽烷化處理製程可以藉由如丙烯醯氧基丙基三甲氧基矽烷或其類似者等矽烷耦合劑所進行,但本發明不限於此。In some embodiments, the electrolytic process is followed by a silanization process to form an additional silane coupling layer on the surface of the roughened layer opposite to the copper foil, thereby further improving the bonding strength between the roughened layer and other subsequent film layers. The silanization process can be performed using a silane coupling agent such as acryloxypropyltrimethoxysilane or the like, but the present invention is not limited thereto.

在一些實施例中,電解製程的操作條件是使用直流電,且電解製程的溫度介於25℃至60℃之間(例如是25℃、35℃、45℃、55℃、60℃或上述介於25℃至60℃之間的任意數值)、電解製程的電流密度介於1A/dm 2(ASD)至120A/dm 2之間(例如是1A/dm 2、10A/dm 2、30A/dm 2、50A/dm 2、80A/dm 2、120A/dm 2或上述介於1A/dm 2至120A/dm 2之間的任意數值)、電解製程的時間介於1秒至45秒之間(例如是1秒、10秒、20秒、30秒、45秒或上述介於1秒至45秒之間的任意數值),但本發明不限於此。 In some embodiments, the electrolysis process is operated under direct current, and the temperature of the electrolysis process is between 25°C and 60°C (e.g., 25°C, 35°C, 45°C, 55°C, 60°C, or any value between 25°C and 60°C), and the current density of the electrolysis process is between 1A/ dm2 (ASD) and 120A/ dm2 (e.g., 1A/ dm2 , 10A/ dm2 , 30A/ dm2 , 50A/ dm2 , 80A/ dm2 , 120A/ dm2, or any value between 1A/ dm2 and 120A/dm2). 2 ), the time of the electrolysis process is between 1 second and 45 seconds (for example, 1 second, 10 seconds, 20 seconds, 30 seconds, 45 seconds or any value between 1 second and 45 seconds), but the present invention is not limited to this.

在一些實施例中,當本發明的銅槽體沒有添加苯三唑而添加含有苯三唑化合物時,而其表面粗糙度(Rz)介於1微米至1.5微米間,且剝離力>4 lb/in,相較於此,當銅槽體沒有添加苯三唑、苯三唑化合物,其表面粗糙度介於1微米至1.5微米間,且剝離力<3 lb/in,但本發明不限於此。In some embodiments, when the copper trough of the present invention does not have benzotriazole added but has a benzotriazole compound added, its surface roughness (Rz) is between 1 micron and 1.5 microns, and the peeling force is greater than 4 lb/in. In comparison, when the copper trough does not have benzotriazole or a benzotriazole compound added, its surface roughness is between 1 micron and 1.5 microns, and the peeling force is less than 3 lb/in, but the present invention is not limited thereto.

茲列舉以下實施例及比較例來闡明本發明的效果,但本發明的權利範圍不是僅限於實施例的範圍。The following embodiments and comparative examples are given to illustrate the effects of the present invention, but the scope of rights of the present invention is not limited to the scope of the embodiments.

使用表1的各實施例及比較例的電解液配方所製成的粗化銅箔製成型號NPG170D的銅箔基板,係根據下述方法進行評估。The roughened copper foil made by the electrolyte formulations of the embodiments and comparative examples in Table 1 was used to make a copper foil substrate with model number NPG170D, and was evaluated according to the following method.

表面粗糙度(Rz):使用雷射或白光測試。Surface roughness (Rz): Tested using laser or white light.

剝離強度:根據IPC-TM-650-2.4.8測試方法,測試金屬基板的剝離強度。Peeling strength: According to the IPC-TM-650-2.4.8 test method, the peeling strength of the metal substrate is tested.

測試所製成的銅箔基板的相關特性,其結果詳如表1所示。比較表1的實施例及比較例的結果後,可以得到以下結論:添加苯三唑錯合物可提升剝離力。The relevant properties of the manufactured copper foil substrate were tested, and the results are shown in Table 1. By comparing the results of the embodiment and the comparative example in Table 1, the following conclusion can be drawn: adding benzotriazole complex can enhance the peeling force.

表1   比較例1 實施例1 銅離子濃度g/L 8 8 硫酸根離子濃度 g/L 90 90 錯合物濃度 g/L 0 1.0 溫度℃ 室溫(25℃) 室溫(25℃) 電流密度 ASD 65 65 時間 S 2 2 表面粗糙度(Rz) um 1.2 1.2 剝離強度 lb/in 2.5 4.2 Table 1 Comparison Example 1 Embodiment 1 Copper ion concentration g/L 8 8 Sulfate ion concentration g/L 90 90 Complex concentration g/L 0 1.0 Temperature ℃ Room temperature (25℃) Room temperature (25℃) Current density ASD 65 65 Time 2 2 Surface roughness (Rz) um 1.2 1.2 Peel strength lb/in 2.5 4.2

綜上所述,本發明改良了用於形成粗化處理層的電解液,使其包括介於0.1g/L至20g/L之間的銅離子、介於30g/L至120g/L之間的硫酸根離子以及介於0.1g/L至10g/L之間的錯合物,如此一來,可以使構成粗化處理層的銅瘤以優異的成核與成長機制生成,因此可以在銅箔上製造出低粗糙度高附著力的粗化處理層。In summary, the present invention improves the electrolyte used to form the roughening layer, so that it includes copper ions between 0.1 g/L and 20 g/L, sulfate ions between 30 g/L and 120 g/L, and complexes between 0.1 g/L and 10 g/L. In this way, the copper nodules constituting the roughening layer can be generated with an excellent nucleation and growth mechanism, so that a roughening layer with low roughness and high adhesion can be manufactured on the copper foil.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed as above by the embodiments, they are not intended to limit the present invention. Any person with ordinary knowledge in the relevant technical field can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be defined by the scope of the attached patent application.

without

without

無。without.

Claims (7)

一種粗化銅箔的製造方法,包括:提供銅箔;以及執行電解製程,以於所述銅箔上形成粗化處理層,其中所述電解製程中的電解液包括介於0.1g/L至20g/L之間的銅離子、介於30g/L至120g/L之間的硫酸根離子以及介於0.1g/L至10g/L之間的錯合物,所述錯合物包括苯并三唑類化合物、丙烷磺酸類化合物、乙二胺四乙酸或其組合,所述電解液中沒有進一步加入其他金屬離子,所述電解製程包括第一電解製程與第二電解製程,且所述第一電解製程中所使用的第一銅離子濃度小於所述第二電解製程中所使用的第二銅離子濃度。 A method for manufacturing a roughened copper foil comprises: providing a copper foil; and performing an electrolytic process to form a roughening treatment layer on the copper foil, wherein the electrolyte in the electrolytic process comprises copper ions between 0.1 g/L and 20 g/L, sulfate ions between 30 g/L and 120 g/L, and complexes between 0.1 g/L and 10 g/L, wherein the complexes comprise benzotriazole compounds, propane sulfonic acid compounds, ethylenediaminetetraacetic acid, or a combination thereof, and no other metal ions are further added to the electrolyte, wherein the electrolytic process comprises a first electrolytic process and a second electrolytic process, and the first copper ion concentration used in the first electrolytic process is less than the second copper ion concentration used in the second electrolytic process. 如請求項1所述的粗化銅箔的製造方法,其中所述第一銅離子濃度介於0.1g/L至10g/L之間,且所述第二銅離子濃度介於1g/L至20g/L之間。 A method for manufacturing a roughened copper foil as described in claim 1, wherein the first copper ion concentration is between 0.1 g/L and 10 g/L, and the second copper ion concentration is between 1 g/L and 20 g/L. 如請求項1所述的粗化銅箔的製造方法,其中執行所述電解製程之後更包括執行矽烷化處理製程。 The method for manufacturing roughened copper foil as described in claim 1 further includes performing a silanization process after performing the electrolysis process. 如請求項1所述的粗化銅箔的製造方法,其中所述電解製程使用直流電。 A method for manufacturing a roughened copper foil as described in claim 1, wherein the electrolysis process uses direct current. 如請求項1所述的粗化銅箔的製造方法,其中所述電解製程的溫度介於25℃至60℃之間。 The method for manufacturing roughened copper foil as described in claim 1, wherein the temperature of the electrolysis process is between 25°C and 60°C. 如請求項1所述的粗化銅箔的製造方法,其中所述電解製程的電流密度介於1A/dm2至120A/dm2之間。 A method for manufacturing a roughened copper foil as described in claim 1, wherein the current density of the electrolytic process is between 1A/ dm2 and 120A/ dm2 . 如請求項1所述的粗化銅箔的製造方法,其中所述電解製程的時間介於1秒至45秒之間。The method for manufacturing a roughened copper foil as described in claim 1, wherein the duration of the electrolysis process is between 1 second and 45 seconds.
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