[go: up one dir, main page]

CN106711045A - 切割金属栅极的方法 - Google Patents

切割金属栅极的方法 Download PDF

Info

Publication number
CN106711045A
CN106711045A CN201610993412.9A CN201610993412A CN106711045A CN 106711045 A CN106711045 A CN 106711045A CN 201610993412 A CN201610993412 A CN 201610993412A CN 106711045 A CN106711045 A CN 106711045A
Authority
CN
China
Prior art keywords
metal gate
metal
hard mask
gate
fin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201610993412.9A
Other languages
English (en)
Inventor
张博钦
王志豪
杨凱傑
洪士庭
吴伟豪
吴琬瑶
傅依婷
苏嘉伟
萧怡瑄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiwan Semiconductor Manufacturing Co TSMC Ltd
Original Assignee
Taiwan Semiconductor Manufacturing Co TSMC Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Manufacturing Co TSMC Ltd filed Critical Taiwan Semiconductor Manufacturing Co TSMC Ltd
Publication of CN106711045A publication Critical patent/CN106711045A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0135—Manufacturing their gate conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0158—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/017—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0184—Manufacturing their gate sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0188—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/834—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] comprising FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/853—Complementary IGFETs, e.g. CMOS comprising FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0151—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0172—Manufacturing their gate conductors
    • H10D84/0177—Manufacturing their gate conductors the gate conductors having different materials or different implants

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

一种切割金属栅极的方法，此方法包括在基板上形成第一鳍与第二鳍。此第一鳍具有第一栅极区域且此第二鳍具有第二栅极区域。此方法亦包括在此第一及第二栅极区域上形成金属栅极接线。此金属栅极接线从第一鳍延伸至第二鳍。此方法亦包括施加线切割以将金属栅极接线分为第一子金属栅极接线及第二子金属栅极接线，并且在线切割中形成隔离区域。

Description

切割金属栅极的方法
技术领域
本揭露是关于一种切割金属栅极的方法。
背景技术
集成电路材料与设计的先进技术已产生数代集成电路，其中与前代相比各代具有更小且更复杂的电路。在集成电路发展过程中，功能密度(即，每晶片面积互连元件的数量)通常已增加而几何尺寸(即，使用制造制程可产生的最小组件(或接线))已减小。此按比例缩小制程一般通过增加生产效率并降低相关成本来提供优势。此按比例缩小亦增加集成电路处理与制造的复杂性，且对于这些进步而言，需要更多集成电路处理与制造的发展。
在一些集成电路设计中，一种作为技术节点(node)缩小实施的进展已经使用金属栅电极取代通常聚硅栅电极以改良具有减小特征尺寸的元件效能。尽管一般而言现存制造集成电路元件的方法针对预期目的已足够，但是在各方面并未完全满意。例如，将金属电极接线切割为子金属电极接线时会出现困难。
发明内容
本揭露的一实施例为一种用于制造半导体元件的方法包括在基板上形成第一鳍及第二鳍。第一鳍具有第一栅极区域而第二鳍具有第二栅极区域。此方法亦包括在第一及第二栅极区域上形成金属栅极线。此金属栅极线从第一鳍延伸至第二鳍。此方法亦包括施加线切割以将金属栅极线分为第一子金属栅极线与第二子金属栅极线，并且在线切割中形成隔离区域。
附图说明
当结合随附附图阅读时，自以下详细描述将最佳地理解本揭露的态样。应注意，根据工业中的标准实务，各特征并非按比例绘制。事实上，出于论述清晰的目的，可任意增加或减小各所示特征的尺寸。
图1为本揭露的部分实施例的制造半导体元件的方法的流程图；
图2A为本揭露的部分实施例的半导体元件的工件的透视图；
图2B为图2A中沿线A-A的半导体元件的工件的截面图；
图2C为图2A中沿线B-B的半导体元件的工件的截面图；
图3A、4A、5A、6A、6C及7A为依照一些实施例，在图2A中沿线A-A的半导体元件的截面图；
图3B、4B、5B、6B、6D及7B是依照一些实施例，在图2A中沿线B-B的半导体元件的截面图；
图8为本揭露的部分实施例的制造半导体元件的另一方法的流程图；
图9A、10A、11A、12A、13A、13C及14A是依照一些实施例，在图2A中沿线A-A的示例性半导体元件的截面图；
图9B、10B、11B、12B、13B、13D及14B是依照一些实施例，在图2A中沿线B-B的半导体元件的截面图；
图15为本揭露的部分实施例的制造的半导体元件的另一方法的流程图；
图16A、17A、18A、19A、20A、20C、21A、22A、23A、24A、24C及25A是依照一些实施例的在图2A中沿线A-A的半导体元件的截面图；
图16B、17B、18B、19B、20B、20D、21B、22B、23B、24B、24D及25B是依照一些实施例，在图2A中沿线B-B的半导体元件的截面图。
具体实施方式
以下揭示内容提供许多不同实施例或实例，以便实施本揭露的不同特征。下文描述元件及排列的特定实例以简化本揭露。当然，这些实例仅为实例且并不意欲为限制性。举例而言，以下描述中在第二特征上方或第二特征上形成第一特征可包括以直接接触形成第一特征及第二特征的实施例，且亦可包括可在第一特征与第二特征之间形成额外特征以使得第一特征及第二特征可不处于直接接触的实施例。另外，本揭露可在各实例中重复元件符号及/或字母。此重复是出于简明性及清晰的目的，且本身并不指示所论述的各实施例及/或配置之间的关系。
进一步地，为了便于描述，本文可使用空间相对性术语，诸如“在……之下”、“在……下方”、“下部”、“在……上方”、“上部”及类似术语，来描述诸图中所示的一个元件或特征与另一元件(或多个元件)或特征(或多个特征)的关系。除了诸图所描绘的定向外，空间相对性术语意欲包含在使用或操作中的装置的不同定向。装置可经其他方式定向(旋转90度或处于其他定向)且因此可同样相应解读本文所使用的空间相对性描述词。
本案是关于，但并非以其他方式受限于，鳍式场效晶体管(FinFET)元件。此元件可包括P-型金属氧化物半导体鳍式场效晶体管元件或N-型金属氧化物半导体鳍式场效晶体管元件。鳍式场效晶体管元件可为双栅极元件、三栅极元件、块状元件、绝缘体上硅(silicon on insulator；SOI)元件、及/或其他构造。一般技术者可了解可受益于本案态样的半导体元件其他实施例。例如，如本文描述的一些实施例亦可应用于环绕式栅极(GAA)元件、Ω-栅极元件、或Pi-栅极(II-栅极)元件。以下揭示内容将以鳍式场效晶体管实例继续来阐明本揭露的各实施例。然而，应了解此应用不应受限于特定类型的元件。
图1为本揭露的部分实施例的制造一或多个半导体元件的方法100的流程图。下文以在图2A至图7B中所示的半导体元件200来详细论述方法100。
参看图1、2A、2B、及2C，方法100通过接收半导体元件200的工件205起始于步骤102。工件205包括基板210。基板210可为块状硅基板。或者，基板210可包含元素半导体，诸如结晶结构的硅(Si)或锗(Ge)；化合物半导体，诸如锗化硅(SiGe)、碳化硅(SiC)、砷化镓(GaAs)、磷化镓(GaP)、磷化铟(InP)、砷化铟(InAs)、及/或锑化铟(InSb)；或其组合。可能的基板210亦包括绝缘体上硅(SOI)基板。使用氧离子植入硅晶隔离法(separation byimplantation of oxygen；SIMOX)、晶圆接合、及/或其他适宜方法来制造绝缘体上硅基板。
一些示例性基板210亦包括绝缘体层。此绝缘体层包含任何适宜材料，包括氧化硅、蓝宝石、及/或其组合。示例性绝缘体层可为内埋式氧化物层(BOX)。通过任何适宜制程，诸如注入(例如，氧离子植入硅晶隔离法)、氧化、沉积、及/或其他适宜制程来形成此绝缘体。在一些示例性半导体元件200中，绝缘体层是绝缘体上硅基板的组件(例如，一层)。
基板210亦可包括各掺杂区域。掺杂区域可掺杂有P-型掺杂剂，诸如硼或二氟化硼(BF2)；N-型掺杂剂，诸如磷或砷；或其组合。可直接在基板210上、在P-阱结构中、在N-阱结构中、在双-阱结构中、及/或使用凸起结构来形成掺杂区域。基板210可进一步包括各种有效区域，诸如针对N-型金属氧化物半导体晶体管元件配置的区域及针对P-型金属氧化物半导体晶体管元件配置的区域。
基板210亦包括各种隔离特征220。隔离特征220分离基板210的各元件区域。隔离特征220包括通过使用不同处理技术形成的不同结构。例如，隔离特征220可包括浅沟槽隔离(STI)特征。形成浅沟槽隔离可包括在基板210中蚀刻沟槽并使用绝缘体材料(诸如氧化硅、氮化硅、或氮氧化硅)填充此沟槽。经填充的沟槽可具有多层结构，诸如热氧化衬层，其中氮化硅填充此沟槽。可进行化学机械研磨(chemical mechanical polishing；CMP)来回磨平过量绝缘体材料并使隔离特征220的顶面平坦。
工件205亦包括在基板210上形成的多个鳍特征230。鳍特征230可包括硅(Si)、硅锗(SiGe)、锡锗硅(SiGeSn)、砷化镓(GaAs)、砷化铟(InAs)、磷化铟(InP)、或其他适宜材料。在一些实施例中，通过包括各沉积、光微影、及/或蚀刻制程的任何适宜制程来形成鳍特征230。例如，通过图案化及蚀刻部分基板210来形成鳍特征230。
工件205亦包括在基板210上的栅极区域242中的多个虚设栅极堆叠240，并包覆部分的鳍特征230。在本实施例中，虚设栅极堆叠240后续将由高介电常数/金属栅极取代。虚设栅极堆叠240可包括介电层、聚硅层。可通过任何适宜制程或制程等，诸如沉积、图案化及蚀刻，来制造虚设栅极堆叠240。
沿虚设栅极堆叠240的侧壁形成侧壁间隔245。侧壁间隔245可包括介电材料，诸如氧化硅。或者，侧壁间隔245可包括氮化硅、碳化硅、氮氧化硅、或其组合。在实施例中，侧壁间隔245具有多个层。如在此项技术中已知，可通过沉积栅极侧壁间隔层并随后各向异性干蚀刻此栅极侧壁间隔层来形成侧壁间隔245。
除虚设栅极堆叠240(具有侧壁间隔245)之外，工件205亦包括在基板210上的源极/漏极区域252中的源极/漏极特征250。在一些实施例中，源极/漏极特征250为源极特征，且另一源极/漏极特征250为漏极特征。源极/漏极特征250由虚设栅极堆叠240分离。在一实施例中，对虚设栅极堆叠240以外的部分鳍特征230进行开槽以形成源极/漏极沟槽并随后通过包括化学气相沉积(chemical vapor deposition；CVD)沉积技术(例如，汽相磊晶(vapor-phase epitaxy；VPE)及/或超高真空化学气相沉积(UHV-CVD))、分子束磊晶法、及/或其他适宜制程的磊晶生长制程在此源极/漏极沟槽上形成源极/漏极特征250。源极/漏极特征250可包括锗(Ge)、硅(Si)、砷化镓(GaAs)、砷化镓铝(AlGaAs)、硅锗(SiGe)、磷化砷镓(GaAsP)、锑化镓(GaSb)、锑化铟(InSb)、砷化镓铟(InGaAs)、砷化铟(InAs)、或其他适宜材料。继由源极/漏极特征250填充源极/漏极沟槽之后，源极/漏极特征250顶层的进一步磊晶生长，往水平方向延伸并可开始形成侧面，诸如菱形侧面。在磊晶制程期间可原位掺杂源极/漏极特征250。在一些实施例中，未原位掺杂源极/漏极特征，进行注入制程(即，接合注入制程)来掺杂源极/漏极特征250。可进行一或多个退火制程来活化掺杂剂。退火制程包括快速热退火(rapid thermal annealing；RTA)及/或激光退火制程。
工件205亦包括在基板210上沉积的层间介电(interlayer dielectric；ILD)层260，包括形成在各虚设栅极堆叠240之间/之上及在源极/漏极特征250上。可通过化学气相沉积、原子层沉积(atomic layer deposition；ALD)、旋涂式涂覆法、或其他适宜技术沉积层间介电层260。层间介电层260可包括氧化硅、氮化硅、氮氧化物、具有低于热氧化硅的介电场数(k)的介电材料(由此称为低介电常数介电材料层)，及/或其他适宜介电材料层。层间介电层260可包括单一层或多个层。可进行化学机械研磨来回磨平层间介电层260以曝露虚设栅极堆叠240的顶面。
应注意，图2B是沿图2A中的线A-A的工件205的截面图，此工件位于两个源极/漏极特征250间。图2C是沿垂直于线A-A的线B-B的工件205的截面图并位于栅极区域242中。
参看图1、3A及3B，一旦接收工件205，方法100即通过移除虚设栅极堆叠240以形成栅极沟槽310进行至步骤104。在一些实施例中，此蚀刻制程可包括选择性湿式蚀刻及/或选择性干式蚀刻，这些蚀刻对于鳍特征230、侧壁间隔245及层间介电层260具有足够的蚀刻选择性。在一实施例中，选择性湿式蚀刻溶液包括氢氧化四甲铵(TMAH)、氢氟酸(HF)/硝酸(HNO3)/乙酸(CH3COOH)溶液、或其他适宜溶液。各蚀刻制程可经各蚀刻参数调整，这些蚀刻参数诸如使用的蚀刻剂、蚀刻温度、蚀刻溶液浓度、蚀刻压力、电源、射频偏压、射频偏压功率、蚀刻剂流速、及/或其他适宜参数。例如，湿式蚀刻溶液可包括氨水(NH4OH)、氢氧化钾(KOH)、氢氟酸(HF)、氢氧化四甲铵(TMAH)、其他适宜湿式蚀刻溶液、或其组合。在另一实例中，干式蚀刻制程包括使用氯基化学试剂的偏压等离子蚀刻制程。其他干式蚀刻剂气体包括四氟化碳(CF4)、三氟化氮(NF3)、六氟化硫(SF6)，及氦(He)。亦可使用如深反应性离子蚀刻(deep reactive-ion etching；DRIE)的此机制各向异性地进行干蚀刻。或者，可通过包括光微影、图案化及回蚀刻的一系列制程来移除虚设栅极堆叠240。
参看图1、4A及4B，方法100进行至步骤106，通过在元件200的栅极沟槽310中形成栅极堆叠410，且覆盖鳍特征230的上部分。可进行化学机械研磨制程以从栅极金属层414移除过量金属层，以此提供栅极金属层414实质上平坦的顶面。由此，沿线B-B的方向，栅极堆叠410从一鳍特征230继续延伸至另一鳍特征230以形成栅极线410L。栅极堆叠410可为高介电常数/金属栅极堆叠，而其他组分是可能的。
在本实施例中，在栅极沟槽310中形成高介电常数/金属栅极堆叠410，包括包覆部分鳍特征230。在各实施例中，高介电常数/金属栅极堆叠410包括分界层、在分界层上形成的栅极介电层412及在栅极介电层412上形成的栅极金属层414。如本文中使用及描述，栅极介电层包括具有高介电常数的介电材料，例如，大于热氧化硅的介电常数(～3.9)的介电材料。栅极金属层414可包括金属、金属合金、及/或金属硅化物。此外，制造高介电常数/金属栅极堆叠410可包括沉积以形成各栅极材料、一或多个衬层、及一或多个化学机械研磨制程来移除过量栅极金属并由此使半导体元件200的顶面平坦化。
在一些实施例中，分界层可包括介电材料，诸如氧化硅(SiO2)、硅酸铪(HfSiO)、及/或氮氧化硅(SiON)。此分界层可通过化学氧化、热氧化、原子曾沉积、化学气相沉积、及/或其他适宜方法来形成。栅极介电层412可包括诸如氧化铪(HfO2)的高介电常数介电层。或者，栅极介电层412可包括其他高介电常数介电材料，诸如二氧化钛(TiO2)、氧化锆铪(HfZrO)、三氧化二钽(Ta2O3)、硅酸铪(HfSiO4)、二氧化锆(ZrO2)、硅酸锆(ZrSiO2)、氧化镧(LaO)、氧化铝(AlO)、氧化锆(ZrO)、氧化钛(TiO)、五氧化二钽(Ta2O5)、氧化钇(Y2O3)、钛酸锶(SrTiO3；STO)、钛酸钡(BaTiO3；BTO)、氧化钡锆(BaZrO)、氧化锆铪(HfZrO)、氧化铪镧(HfLaO)、氧化铪硅(HfSiO)、氧化镧硅(LaSiO)、氧化硅铝(AlSiO)、氧化铪钽(HfTaO)、氧化铪钛(HfTiO)、钛酸锶钡((Ba,Sr)TiO3；BST)、氧化铝(Al2O3)、氮化硅(Si3N4)、氮氧化物(SiON)、其组合、或其他适宜材料。高介电常数栅极介电层412可通过原子层沉积、物理气相沉积、化学气相沉积、氧化、及/或其他适宜方法来形成。
栅极金属层414可包括单一层或者多层结构，诸如具有经选择功函数以增强元件效能的金属层(功函数金属层)、衬层、润湿层、粘合层、金属合金或金属硅化物的各种组合。举例而言，栅极金属层414可包括钛(Ti)、金(Ag)、铝(Al)、氮化钛铝(TiAlN)、碳化钽(TaC)、氮碳化钽(TaCN)、氮硅化钽(TaSiN)、氮化钛(TiN)、氮化钽(TaN)、锰(Mn)、锆(Zr)、钌(Ru)、钼(Mo)、铝(Al)、氮化钨(WN)、铜(Cu)、钨(W)、铼(Re)、铱(Ir)、钴(Co)、镍(Ni)、其他适宜金属材料或其组合。在各实施例中，栅极金属层414可由原子层沉积、物理气相沉积、化学气相沉积、电子束蒸镀、或其他适宜制程形成。此外，可分别针对可使用不同金属层的N-场效晶体管及P-场效晶体管形成栅极金属层414。在各实施例中，可进行化学机械研磨制程以从栅极金属层414移除过量金属，以此提供栅极金属层414的大体上平坦顶面。
参看图1、5A、及5B，在形成高介电常数/金属栅极堆叠410之后，方法100通过在栅极金属层414上形成经图案化的硬遮罩510而进行至步骤108。经图案化的硬遮罩510具有界定待后续形成的线切割的开口515。在开口515内曝露部分高介电常数/金属栅极线410L(高介电常数/金属栅极堆叠)。在一些实施例中，开口515具有沿线A-A的方向的较大宽度，以使得相邻侧壁间隔245及层间介电层260在开口515中曝露以获得优点，诸如放宽微影制程解析度限制，尤其是当元件200按比例缩小时，使得在两个相邻鳍特征230之间的空间变得越来越小。
在一些实施例中，经图案化的硬遮罩510可包括经图案化的光阻层并通过微影制程形成。示例性微影制程可包括形成光阻层、通过微影曝光制程曝光此光阻层、进行后曝光烘烤制程、及显像此光阻层以形成经图案化的光阻层。或者，可通过沉积硬遮罩层、在硬遮罩层上通过微影制程形成经图案化的光阻层，再通过经图案化光阻层蚀刻此硬遮罩材料层来形成经图案化的硬遮罩510。
参看图1、6A、及6B，方法100借由通过开口515移除经曝露的高介电常数/金属栅极堆叠410以形成线切割610来进行至步骤110。在本实施例中，线切割610延伸至隔离特征220并将高介电常数/金属栅极线410L分为两个子高介电常数/金属栅极线410LA及410LB。子高介电常数/金属栅极线410LA沿着线B-B方向通过具有宽度d的线切割610与子高介电常数/金属栅极线410LB分离。
蚀刻制程可包括湿式蚀刻、干式蚀刻、及/或其组合。例如，干式蚀刻制程可实施含氟气体(例如，四氟化碳(CF4)、六氟化硫(SF6)、二氟甲烷(CH2F2)、三氟甲烷(CHF3)及/或六氟乙烷(C2F6))、含氯气体(例如，氯(Cl2)、三氯甲烷(CHCl3)、四氯化碳(CCl4)及/或三氯化硼(BCl3))、含溴气体(例如，溴酸(HBr)及/或三溴甲烷(CHBr3))、含碘气体、其他适宜气体及/或等离子、及/或上述气体的组合。在一些实施例中，执行选择蚀刻制程以选择性蚀刻高介电常数/金属栅极堆叠410，而实质上并不蚀刻侧壁间隔245及层间介电层260。如图所示，针对其中部分侧壁间隔245及层间介电层260曝露在开口515中(如在图5A及5B中所示)的情况，经曝露部分的侧壁间隔245及层间介电层260一起充当子蚀刻遮罩。因此，可放宽制程限制的自动对准性质形成线切割610。
在形成线切割610之后，如在图6C及6D中显示，通过蚀刻制程移除经图案化的硬遮罩510。在其中经图案化的硬遮罩510是光阻图案的一实例中，通过湿式剥离及/或等离子灰化移除经图案化的硬遮罩510。
参看图1、7A及7B，方法100通过使用介电层710填充线切割610以在两子高介电常数/金属栅极线410LA及410LB之间形成隔离区域715而进行至步骤112。可通过化学气相沉积、原子层沉积、旋涂式涂覆法、或其他适宜技术沉积介电层710。介电层710可包括氧化硅、氮化硅、氮氧化物、具有低于热氧化硅介电常数(k)的介电材料(由此称为低介电常数介电材料层)，及/或其他适宜介电材料层。可进行化学机械研磨来回磨平介电层710，以此提供高介电常数/金属栅极堆叠410与介电层710具有实质上平坦顶面。由此，将高介电常数/金属栅极线410L切割为子高介电常数/金属栅极线410LA及410LB，并且高介电常数/金属栅极线410L通过隔离区域715分离。
在方法100之前、期间、或之后可提供额外步骤，且可围绕方法100的额外实施例取代、消除、或移动所描述的一些步骤。其他替代或实施例可不脱离本案的精神及范围存在。
图8是包括制造半导体元件2000的半导体制造的方法1000。步骤1002、1003、1004、1005至步骤1006分别与上文在方法100的步骤102至106中论述的彼等内容相似。因此，上文关于步骤102至106的论述分别适用于步骤1002至1006。本案可在各实例中重复元件符号及/或字母。此重复是出于简明性及清晰的目的，以使得除非另作声明，否则重复的元件符号及/或字母指明在各实施例间的相似特征。
参看图8、9A、及9B，方法1000通过开槽高介电常数/金属栅极堆叠410以在栅极沟槽310中形成子沟槽1210来进行至步骤1008。后文将开槽后的高介电常数/金属栅极堆叠410称为高介电常数/金属栅极堆叠410’。蚀刻制程可包括湿式蚀刻、干式蚀刻、及/或其组合。例如，干式蚀刻制程可实施含氟气体(例如，四氟化碳(CF4)、六氟化硫(SF6)、二氟甲烷(CH2F2)、三氟甲烷(CHF3)及/或六氟乙烷(C2F6))、含氯气体(例如，氯(Cl2)、三氯甲烷(CHCl3)、四氯化碳(CCl4)及/或三氯化硼(BCl3))、含溴气体(例如，溴酸(HBr)及/或三溴甲烷(CHBr3))、含碘气体、其他适宜气体及/或等离子、及/或上述气体的组合。在一些实施例中，执行选择蚀刻制程以选择性蚀刻高介电常数/金属栅极堆叠410而实质上并不上蚀刻侧壁间隔245及层间介电层260。
参看图8、10A、及10B，方法1000通过在子沟槽1210中，包括在高介电常数/金属栅极线410L上的高介电常数/金属栅极堆叠410’上形成硬遮罩1220而进行至步骤1010。在一些实施例中，硬遮罩1220在随后源极/漏极接触蚀刻制程中，通过在移除层间介电层260期间保护高介电常数/金属栅极堆叠410’提供针对高介电常数/金属栅极堆叠410’的保护。硬遮罩1220可包括氮化硅、碳化硅、氮氧化硅、及/或其他适宜材料。在本实施例中，硬遮罩1220包括不同于侧壁间隔245及层间介电层260的材料以在随后蚀刻制程期间达成蚀刻选择性。在实施例中，硬遮罩1220包括氮化硅而侧壁间隔245及层间介电层260包括氧化硅。可通过化学气相、原子层沉积、及/或其他适当技术沉积硬遮罩1220。可进行化学机械研磨来回磨平硬遮罩1220及以此提供关于层间介电层260及侧壁间隔245的硬遮罩1220的大体上平坦顶面。
参看图8、11A、及11B，在高介电常数/金属栅极堆叠410’上形成硬遮罩1220之后，方法1000通过在硬遮罩1220上形成经图案化的硬遮罩1230而进行至步骤1012。经图案化的硬遮罩1230具有界定待后续形成的线切割的开口1235。开口1235对准高介电常数/金属栅极线410L的指定部分(例如，在两个鳍特征230之间)，此部分随后可移除。在一些实施例中，开口1235沿线A-A的方向具有较大宽度，以使得相邻侧壁间隔245及部分层间介电层260在开口1235中曝露以获得优点，诸如放宽微影制程解析限制，尤其是当元件2000按比例缩小时，两个相邻鳍特征230之间的空间变得越来越小。在众多方面中，经图案化的硬遮罩1230与上文结合图5A及5B论述的经图案化硬遮罩510的方法相似，包括其中论述的材料。
参看图8、12A、及12B，方法1000借由通过开口1235移除硬遮罩1220以曝露部分高介电常数/金属栅极堆叠410’来进行至步骤1014。此蚀刻制程可包括湿式蚀刻、干式蚀刻、及/或上述蚀刻的组合。在一些实施例中，执行选择此蚀刻制程以选择性蚀刻硬遮罩1220而实质上并不蚀刻侧壁间隔245及层间介电层260。如图所示，针对其中侧壁间隔245及部分层间介电层260在开口1235中曝露的情况(如在图11A中所示)，经曝露的侧壁间隔245与部分层间介电层260一起充当子蚀刻遮罩。因此，使用放宽制程限制的自动对准性质移除硬遮罩1220。
参看图8、13A、及13B，方法1000借由通过开口1235移除经曝露的高介电常数/金属栅极堆叠410’以形成线切割1240来进行至步骤1016。在本实施例中，线切割1240延伸至隔离特征220并将高介电常数/金属栅极线410L分为两子高介电常数/金属栅极线410LA及410LB。子高介电常数/金属栅极线410LA通过沿图2A的线B-B方向宽度d的线切割1240与子高介电常数/金属栅极线410LB分离开。此蚀刻制程是在众多方面与上文结合第6A及6B图论述的蚀刻制程相似。在形成线切割1240之后，如在图13C及13D中所示，通过蚀刻制程移除经图案化的硬遮罩1230。在其中经图案化的硬遮罩1230是光阻图案的一实例中，通过湿剥离及/或等离子灰化移除经图案化的硬遮罩1230。
参看图8、14A、及14B，方法1000通过使用介电层1250填充线切割1240以在两子高介电常数/金属栅极线410LA及410LB间形成隔离区域1255来进行至步骤1018。在众多方面中，形成介电层1250的方法与上文结合第7A及7B图论述的介电层710相似，包括其中论述的材料。可进行化学机械研磨以回磨平介电层1250并以此提供硬遮罩1220顶面的介电层1250实质上平坦顶面。由此，将高介电常数/金属栅极线410L切割为子高介电常数/金属栅极线410LA及410LB，并且高介电常数/金属栅极线410L通过隔离区域1255分离。
在方法1000之前、期间、或之后可提供额外步骤，且可围绕方法1000的额外实施例取代、消除、或移动所描述的一些步骤。其他替代或实施例可不脱离本案的精神及范围存在。
图15是包括制造半导体元件4000的半导体制造的方法3000。步骤3002、3003、3004、3005至步骤3006是分别与上文在方法100的步骤102至106中论述的彼等内容相似。步骤3008及步骤3010是分别与上文在方法1000的步骤1008及1010中论述的彼等内容相似。因此，上文有关步骤102至106的论述分别适用于步骤1002至1006。相似地，上文有关步骤1008及1010的论述分别适用于步骤3008及3010。本案可在各实施例中重复元件符号及/或字母。此重复是出于简明性及清晰的目的，以使得除非另作声明，否则重复的元件符号及/或字母指明在各实施例间的相似特征。
参看图15、16A及16B，在子沟槽1210中形成硬遮罩1220之后，方法3000通过开槽硬遮罩1220以形成第一沟槽3210而进行至步骤3012。经开槽的硬遮罩1220是称为硬遮罩1220’。开槽硬遮罩1220的蚀刻制程可包括湿式蚀刻、干式蚀刻、及/或上述蚀刻的组合。在一些实施例中，选择此蚀刻制程以选择性蚀刻第一硬遮罩1220而不大体上蚀刻侧壁间隔245及层间介电层260。因此，使用放宽制程限制的自动对准性质形成第一沟槽3210。
参看图15、17A及17B，方法3000通过开槽侧壁间隔245以更宽地扩展(或加大)第一沟槽3210，下述称为第二沟槽3210’而进行至步骤3014。此蚀刻制程可包括湿式蚀刻、干式蚀刻、及/或上述蚀刻的组合。在一些实施例中，选择此蚀刻制程以选择性蚀刻侧壁间隔245而不大体上蚀刻层间介电层260及硬遮罩1220。因此，使用放宽制程限制的自动对准性质形成经扩展的第二沟槽3210’。经开槽的侧壁间隔245称为侧壁间隔245’。在一些实施例中，控制蚀刻制程使得经开槽的侧壁间隔245’的顶面是大体上与硬遮罩1220’的顶面共面。
参看图15、18A及18B，方法3000通过在第二沟槽3210’中形成第二硬遮罩3230而进行至步骤3016。在一些实施例中，第二硬遮罩3230覆盖硬遮罩1220’并延伸以覆盖侧壁间隔245’以在随后蚀刻制程中增强对高介电常数/金属栅极堆叠410’的保护，诸如通过在随后源极/漏极接触蚀刻制程中移除层间介电层260期间保护经开槽的高介电常数/金属栅极堆叠410’，并改良对随后源极/漏极接触微影制程的容差。
在众多方面中，与上文结合图10A及10B论述的硬遮罩1220相似地形成第二硬遮罩3230，包括其中论述的材料。在本实施例中，第二硬遮罩3230包括不同于层间介电层260的材料以在随后蚀刻制程期间达成蚀刻选择性。或者，进行化学机械研磨来磨平过量第二硬遮罩3230。
参看图15、19A及19B，方法3000通过在第二硬遮罩3230上形成第一经图案化的硬遮罩3240而进行至步骤3018。第一经图案化的硬遮罩3240具有界定待后续形成的源极/漏极触点的开口3245。开口3245对准在指定源极/漏极特征250上的层间介电层260。在一些实施例中，开口3245具有沿线A-A方向的较大宽度，以使得相邻第二硬遮罩3230在开口3245中曝露以获得优点，诸如放宽微影制程解析限制，特定言之当元件4000按比例缩小时，以使得在两个相邻鳍特征230之间的空间变得越来越小。在众多方面中，形成第一经图案化的硬遮罩3240的方法与上文结合第5A及5B图论述的经图案化的硬遮罩510相似，包括其中论述的材料。
参看图15、20A、20B及20C，方法3000借由通过开口3245移除层间介电层260来形成源极/漏极接触沟槽3250而进行至步骤3020。由此，在源极/漏极接触沟槽3250中曝露指定的源极/漏极特征250。如先前提及，执行选择此沟槽蚀刻制程来选择性移除层间介电层260而实质上不蚀刻第二硬遮罩3230。如图所示，针对其中部分第二硬遮罩3230在开口3245中曝露的情况(如在图19A及19B中所示)，第二硬遮罩3230充当子蚀刻遮罩。因此，使用放宽制程限制的自动对准性质形成源极/漏极接触沟槽3250。沟槽蚀刻可包括选择性湿式蚀刻、选择性干式蚀刻、及/或上述蚀刻的组合。例如，沟槽蚀刻包括使用氟基化学，诸如四氟化碳(CF4)、六氟化硫(SF6)、二氟甲烷(CH2F2)、三氟甲烷(CHF3)及/或六氟乙烷(C2F6)的等离子干式蚀刻制程。
在形成源极/漏极接触沟槽3250之后，如在第20D图中所示，通过蚀刻制程移除第一经图案化的硬遮罩3240。在其中第一经图案化硬遮罩3240是光阻图案的一实例中，通过湿汽提及/或等离子灰化移除第一经图案化的硬遮罩3240。
参看图15、21A及21B，方法3000通过在源极/漏极接触沟槽3250中沉积导电层以形成源极/漏极接触金属3310而进行至步骤3022。如图所示，源极/漏极接触金属3310在源极/漏极接触沟槽3250中延伸至源极/漏极特征250。源极/漏极接触金属3310可包括铜(Cu)、铝(Al)、钨(W)、铜、镁铜(CuMn)、铝铜(CuAl)或硅铜(CuSi)、及/或其他适宜导电材料。可通过物理气相沉积、化学气相沉积、金属有机化学气相沉积(metal-organic chemical vapordeposition；MOCVD)、或电镀形成源极/漏极接触金属3310。在一些实施例中，进行化学机械研磨制程以从第二硬遮罩3230移除过量源极/漏极接触金属3310，以此提供与第二硬遮罩3230的顶面大体上共面的顶面。
参看图15、22A及22B，在形成源极/漏极接触金属3310之后，方法3000通过在第二硬遮罩3230及源极/漏极接触金属3310上形成第二经图案化的硬遮罩3410而进行至步骤3024。此第二经图案化的硬遮罩3410具有界定待后续形成的线切割的开口3415。开口3415对准高介电常数/金属栅极线410L的指定部分(例如，在两个鳍特征230间)，随后将其移除。在一些实施例中，开口3415具有沿线A-A方向的较大宽度，以使得相邻开槽的侧壁间隔245’及部分源极/漏极接触金属3310在开口3415中以获得优点，诸如放宽微影制程解析限制，尤其是当元件4000按比例缩小时，以使得在两个相邻鳍特征230之间的空间变得越来越小。在众多方面中，形成第二经图案化的硬遮罩3410的方法与上文结合图5A及5B论述的经图案化硬遮罩510相似，包括其中论述的材料。
参看图15、23A及23B，方法3000借由通过开口3415移除第二硬遮罩3230、硬遮罩1220’及侧壁间隔245’以曝露高介电常数/金属栅极堆叠410’的指定部分来进行至步骤3026。此蚀刻制程可包括湿式蚀刻、干式蚀刻、及/或上述蚀刻的组合。在一些实施例中，选择此蚀刻制程以选择性蚀刻第二硬遮罩3230及侧壁间隔245’而实质上不蚀刻高介电常数/金属栅极堆叠410’及源极/漏极接触金属3310。如图所示，针对其中部分源极/漏极接触金属3310在开口3415中曝露的情况(如在图22A及22B中所示)，源极/漏极接触金属3310充当子蚀刻遮罩。
参看图15、24A及24B，方法3000借由通过开口3415移除经曝露的高介电常数/金属栅极堆叠410’以形成线切割3420而进行至步骤3028。在本实施例中，线切割3420延伸至隔离特征220并将高介电常数/金属栅极线410L分为两子高介电常数/金属栅极线410LA及410LB。子高介电常数/金属栅极线410LA沿着图2A的线B-B方向与子高介电常数/金属栅极线410LB分离，且其距离具有宽度d。在众多方面中，此蚀刻制程是与上文结合图6A及6B论述的蚀刻制程相似。在形成线切割3420之后，如在第24C及24D图中所示，通过蚀刻制程移除第二经图案化的硬遮罩3410。
参看图15、25A及25B，方法3000通过使用介电层3510填充线切割3420以在两子高介电常数/金属栅极线410LA及410LB之间形成隔离区域3515而进行至步骤3030。在众多方面中，与上文结合图7A及7B论述的介电层710相似地形成介电层3510，包括其中论述的材料。可进行化学机械研磨来回磨平介电层3510并以此提供关于第二硬遮罩3230的顶面的介电层3510的大体上平坦顶面。由此，将高介电常数/金属栅极线410L切割为子高介电常数/金属栅极线410LA及410LB，并且高介电常数/金属栅极线410L由隔离区域3515分离。
在方法3000之前、期间、或之后可提供额外步骤，且可围绕方法3000的额外实施例取代、消除、或移动所描述的一些步骤。其他替代或实施例可不脱离本案的精神及范围存在。
半导体元件200、2000及4000可经进一步互补式金属氧化物半导体或金属氧化物半导体技术处理以形成在此项技术中已知的各特征及区域。例如，后续处理可在基板210上形成各触点/通道/接线及多层互连特征(例如，金属层及层间介电)，这些特征经配置以连接鳍式场效晶体管元件200的各特征或结构。例如，多层互连包括垂直互连，诸如常规通道或触点，及水准互连，诸如金属线。各互连特征可实施包括铜、钨、及/或硅化物的各导电材料。在一实例中，镶嵌及/或双重镶嵌制程是用于形成铜相关多层互连结构。
基于上文，可了解本案提供在高介电常数/金属栅极取代虚设栅极堆叠之后切割金属栅极线的方法。此方法提供切割金属栅极线的各制程方案，诸如在高介电常数/金属栅极取代虚设栅极堆叠之后切割金属栅极线或在形成源极/漏极接触金属之后切割金属栅极线。此方法阐明用于切割金属栅极线的可行且挠性制程。
本案提供制造半导体元件的众多不同实施例，此半导体元件提供在现存途径基础上的一或多个改良。本揭露的一实施例为一种用于制造半导体元件的方法包括在基板上形成第一鳍及第二鳍。第一鳍具有第一栅极区域而第二鳍具有第二栅极区域。此方法亦包括在第一及第二栅极区域上形成金属栅极线。此金属栅极线从第一鳍延伸至第二鳍。此方法亦包括施加线切割以将金属栅极线分为第一子金属栅极线与第二子金属栅极线，并且在线切割中形成隔离区域。
依据本揭露的部分实施例，其中施加线切割以将金属栅极线分为第一子金属栅极线与第二子金属栅极线包括形成第一经图案化的硬遮罩于金属栅极线上方，其中第一经图案化的硬遮罩界定一开口。经由开口蚀刻金属栅极线。
依据本揭露的部分实施例，其中在线切割中形成隔离区域包括形成介电层于线切割中，以及开槽介电层。
依据本揭露的部分实施例，此方法更包含先形成金属栅极线于第一栅极区域及第二栅极区域上方，并形成虚设栅极堆叠于第一栅极区域及第二栅极区域上方。形成层间介电层于基板以及虚设栅极堆叠上方。
依据本揭露的部分实施例，其中形成金属栅极线于第一栅极区域及第二栅极区域上方包含移除虚设栅极堆叠以曝露第一栅极区域及第二栅极区域的一部分。沉积栅极介电层于第一栅极区域及第二栅极区域的曝露的部分上方。沉积金属线于第一栅极区域及第二栅极区域内的栅极介电层上方。
依据本揭露的部分实施例，其中形成金属栅极线于第一栅极区域及第二栅极区域上方包括移除虚设栅极堆叠以曝露第一栅极区域及第二栅极区域的一部分。沉积栅极介电层于第一栅极区域及第二栅极区域的曝露的部分上方。沉积金属栅极线于第一栅极区域及第二栅极区域内的栅极介电层上方。开槽第一栅极区域及第二栅极区域内的栅极金属层的一部分。以及形成硬遮罩于经开槽的第一栅极区域及第二栅极区域内的栅极金属层的部分上方。
依据本揭露的部分实施例，其中施加线切割以将金属栅极线分为第一子金属栅极线与第二子金属栅极线包括形成经图案化的硬遮罩于硬遮罩上方，其中经图案化的硬遮罩具有开口，使得金属栅极线的一部分对齐开口。经由开口蚀刻硬遮罩。经由开口蚀刻金属栅极线。
依据本揭露的部分实施例，其中形成金属线于第一栅极区域及第二栅极区域内的栅极介电层上方包括形成金属栅极线于侧壁间隔之间。其中侧壁间隔及介电层的一部分自开口中曝露。其中经由开口蚀刻金属栅极线包含将曝露的侧壁间隔及介电层的一部分作为蚀刻遮罩。
本揭露的另一实施例为一种用于制造半导体元件的方法包括在基板上形成多个金属栅极堆叠，以使得此多个栅极堆叠彼此连接以形成金属栅极线。此多个金属栅极堆叠具有沿着金属栅极堆叠侧壁配置的侧壁间隔。此方法亦包括在邻近金属栅极堆叠的基板中形成源极/漏极特征、在金属栅极堆叠及源极/漏极特征上形成介电层、开槽多个金属栅极堆叠及侧壁间隔、在经开槽的多个金属栅极堆叠及经开槽的侧壁间隔上形成硬遮罩、移除部分介电层以曝露源极/漏极特征，同时此硬遮罩保护开槽的金属栅极堆叠及经开槽的侧壁间隔。此方法亦包括在经曝露的源极/漏极特征上形成接触金属层、形成线切割以将金属栅极线切割为子金属栅极线，并在线切割中形成隔离区域。
依据本揭露的部分实施例，其中在基板上形成多个金属栅极堆叠，以使得此多个栅极堆叠彼此连接以形成金属栅极线包括形成延伸自基板外的多个鳍，各鳍具有源极/漏极区域及栅极区域。形成虚设栅极堆叠于各栅极区域中。移除虚设栅极堆叠以曝露各鳍的部分。形成多个金属栅极堆叠于曝露的鳍的部分上方。
依据本揭露的部分实施例，其中开槽多个金属栅极堆叠及侧壁间隔包括开槽多个栅极堆叠而实质上不蚀刻侧壁间隔。形成另一硬遮罩于经开槽的栅极堆叠上方。开槽侧壁间隔而实质上不蚀刻另一硬遮罩，其中经开槽的侧壁间隔的上表面与硬遮罩的上表面实质上共平面。
依据本揭露的部分实施例，其中在经开槽的多个金属栅极堆叠及经开槽的侧壁间隔上形成硬遮罩包括形成硬遮罩于另一硬遮罩上方，并开槽侧壁间隔。
依据本揭露的部分实施例，其中形成线切割以将金属栅极线切割为子金属栅极线包括形成经图案化的硬遮罩于金属栅极线上方，其中经图案化的硬遮罩具有开口。经由开口蚀刻金属栅极线。
依据本揭露的部分实施例，其中经开槽的侧壁间隔及接触金属层的一部分曝露于开口中。其中经由开口蚀刻金属栅极线包括将侧壁间隔及接触金属层的部分作为蚀刻遮罩。
依据本揭露的部分实施例，其中在线切割中形成隔离区域包括以介电层填补于线切割内。开槽介电层。
本揭露的又一实施例为一种切割金属栅极的方法包括在基板上形成多个鳍，这些鳍中的各者具有栅极区域，在各栅极区域中形成虚设栅极堆叠，沿各虚设栅极堆叠的侧壁形成侧壁间隔，在包括除虚设栅极堆叠以外的基板上形成层间介电层。此方法亦包括移除虚设栅极堆叠以在此栅极区域中曝露部分鳍，在经曝露的部分鳍上形成金属栅极堆叠，其中此金属栅极堆叠形成金属栅极线，开槽金属栅极堆叠，在经开槽的金属栅极堆叠上形成硬遮罩，形成线切割以将金属栅极线切割为子金属栅极线，同时此硬遮罩保护金属栅极堆叠并在线切割中形成隔离区域。
依据本揭露的部分实施例，其中开槽金属栅极堆叠包括开槽金属栅极堆叠而实质上不蚀刻侧壁间隔及层间介电层。
依据本揭露的部分实施例，其中在经开槽的金属栅极堆叠上形成硬遮罩包括形成硬遮罩于另一硬遮罩上方。
依据本揭露的部分实施例，其中形成线切割以将金属栅极线切割为子金属栅极线包括形成经图案化的硬遮罩于金属栅极线上方，其中经图案化的硬遮罩具有开口。经由开口蚀刻硬遮罩。以及经由开口蚀刻金属栅极线。
依据本揭露的部分实施例，其中在线切割中形成隔离区域包括以介电层填补于线切割内。开槽介电层。
上文概述若干实施例的特征，使得熟悉此项技术者可更好地理解本揭露的态样。熟悉此项技术者应了解，可轻易使用本揭露作为设计或修改其他制程及结构的基础，以便实施本文所介绍的实施例的相同目的及/或达成相同优点。熟悉此项技术者亦应认识到，此类等效结构并未脱离本揭露的精神及范畴，且可在不脱离本揭露的精神及范畴的情况下进行本文的各种变化、替代及更改。

Claims (1)

1.一种切割金属栅极的方法，其特征在于，包含：
在一基板上形成一第一鳍及一第二鳍，该第一鳍具有一第一栅极区域及该第二鳍具有一第二栅极区域；
在该第一栅极区域与该第二栅极区域上形成一金属栅极线，其中该金属栅极线从该第一鳍延伸至该第二鳍；
施加一线切割以将该金属栅极线分为一第一子金属栅极线与一第二子金属栅极线；以及
在该线切割中形成一隔离区域。
CN201610993412.9A 2015-11-13 2016-11-11 切割金属栅极的方法 Pending CN106711045A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/940,841 US9520482B1 (en) 2015-11-13 2015-11-13 Method of cutting metal gate
US14/940,841 2015-11-13

Publications (1)

Publication Number Publication Date
CN106711045A true CN106711045A (zh) 2017-05-24

Family

ID=57484005

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610993412.9A Pending CN106711045A (zh) 2015-11-13 2016-11-11 切割金属栅极的方法

Country Status (3)

Country Link
US (1) US9520482B1 (zh)
CN (1) CN106711045A (zh)
TW (1) TWI710062B (zh)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109216354A (zh) * 2017-06-29 2019-01-15 台湾积体电路制造股份有限公司 金属栅极结构切割工艺
CN109427777A (zh) * 2017-08-30 2019-03-05 台湾积体电路制造股份有限公司 具有倾斜侧壁的切割金属栅极
CN109786463A (zh) * 2017-11-15 2019-05-21 台湾积体电路制造股份有限公司 金属栅极结构及其制造方法
CN110197828A (zh) * 2018-02-26 2019-09-03 台湾积体电路制造股份有限公司 半导体器件及其形成方法
CN110890276A (zh) * 2018-09-11 2020-03-17 Imec 非营利协会 栅极、触点和翅片切割方法
CN110892523A (zh) * 2017-07-20 2020-03-17 国际商业机器公司 形成自对准触点

Families Citing this family (1626)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8367498B2 (en) 2010-10-18 2013-02-05 Taiwan Semiconductor Manufacturing Company, Ltd. Fin-like field effect transistor (FinFET) device and method of manufacturing same
US9773696B2 (en) 2014-01-24 2017-09-26 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and manufacturing method thereof
US9853154B2 (en) 2014-01-24 2017-12-26 Taiwan Semiconductor Manufacturing Company Ltd. Embedded source or drain region of transistor with downward tapered region under facet region
US9281363B2 (en) 2014-04-18 2016-03-08 Taiwan Semiconductor Manufacturing Company Ltd. Circuits using gate-all-around technology
US9385197B2 (en) 2014-08-29 2016-07-05 Taiwan Semiconductor Manufacturing Co., Ltd Semiconductor structure with contact over source/drain structure and method for forming the same
US9818744B2 (en) 2014-09-04 2017-11-14 Taiwan Semiconductor Manufacturing Company, Ltd. Leakage current suppression methods and related structures
US9991343B2 (en) 2015-02-26 2018-06-05 Taiwan Semiconductor Manufacturing Company Ltd. LDD-free semiconductor structure and manufacturing method of the same
US9768261B2 (en) 2015-04-17 2017-09-19 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method of forming the same
US9601567B1 (en) * 2015-10-30 2017-03-21 Taiwan Semiconductor Manufacturing Co., Ltd. Multiple Fin FET structures having an insulating separation plug
US9947592B2 (en) * 2015-11-16 2018-04-17 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET devices and methods of forming the same
US9786737B2 (en) * 2015-12-03 2017-10-10 International Business Machines Corporation FinFET with reduced parasitic capacitance
US9954081B2 (en) 2015-12-15 2018-04-24 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor, semiconductor device and fabricating method thereof
US9722081B1 (en) 2016-01-29 2017-08-01 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET device and method of forming the same
US9768170B2 (en) 2016-02-05 2017-09-19 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor and method for fabricating the same
US9847330B2 (en) 2016-02-05 2017-12-19 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor and method for fabricating the same
US10002867B2 (en) 2016-03-07 2018-06-19 Taiwan Semiconductor Manufacturing Co., Ltd. Fin-type field effect transistor structure and manufacturing method thereof
US9893120B2 (en) 2016-04-15 2018-02-13 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method of forming the same
US10079291B2 (en) 2016-05-04 2018-09-18 Taiwan Semiconductor Manufacturing Co., Ltd. Fin-type field effect transistor structure and manufacturing method thereof
US10032877B2 (en) 2016-08-02 2018-07-24 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET and method of forming same
US10157918B2 (en) 2016-08-03 2018-12-18 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US10840350B2 (en) 2016-10-31 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Nanolaminate structure, semiconductor device and method of forming nanolaminate structure
US10700181B2 (en) 2016-11-28 2020-06-30 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor (finFET) device structure and method for forming the same
US10326003B2 (en) 2016-11-28 2019-06-18 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET device and methods of forming
US10276677B2 (en) 2016-11-28 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
US10879354B2 (en) 2016-11-28 2020-12-29 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and forming method thereof
US10115808B2 (en) 2016-11-29 2018-10-30 Taiwan Semiconductor Manufacturing Company, Ltd. finFET device and methods of forming
US9991165B1 (en) 2016-11-29 2018-06-05 Taiwan Semiconductor Manufacturing Company, Ltd. Asymmetric source/drain epitaxy
US10453943B2 (en) 2016-11-29 2019-10-22 Taiwan Semiconductor Manufacturing Company, Ltd. FETS and methods of forming FETS
US10510851B2 (en) 2016-11-29 2019-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. Low resistance contact method and structure
US10164066B2 (en) 2016-11-29 2018-12-25 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET devices and methods of forming
US10515951B2 (en) 2016-11-29 2019-12-24 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US10008497B2 (en) 2016-11-29 2018-06-26 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US10553720B2 (en) 2016-11-29 2020-02-04 Taiwan Semiconductor Manufacturing Company, Ltd. Method of removing an etch mask
US10170378B2 (en) 2016-11-29 2019-01-01 Taiwan Semiconductor Manufacturing Co., Ltd. Gate all-around semiconductor device and manufacturing method thereof
US10510888B2 (en) 2016-11-29 2019-12-17 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10388644B2 (en) 2016-11-29 2019-08-20 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing conductors and semiconductor device which includes conductors
US9953875B1 (en) 2016-11-30 2018-04-24 Taiwan Semiconductor Manufacturing Company Contact resistance control in epitaxial structures of finFET
US10707328B2 (en) 2016-11-30 2020-07-07 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming epitaxial fin structures of finFET
US10672824B2 (en) 2016-11-30 2020-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor
US10269906B2 (en) 2016-11-30 2019-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having two spacers
US10453741B2 (en) 2016-12-13 2019-10-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming semiconductor device contact
DE102017113681B4 (de) 2016-12-14 2024-12-24 Taiwan Semiconductor Manufacturing Co. Ltd. Halbleiter-bauelement mit luft-abstandshalter und herstellungsverfahren
US10037912B2 (en) 2016-12-14 2018-07-31 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of manufacturing the same
US10522642B2 (en) 2016-12-14 2019-12-31 Taiwan Semiconductor Manufacturing Co. Ltd. Semiconductor device with air-spacer
US10522694B2 (en) 2016-12-15 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of manufacturing semiconductor device
US10497811B2 (en) 2016-12-15 2019-12-03 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET structures and methods of forming the same
US10276691B2 (en) 2016-12-15 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Conformal transfer doping method for fin-like field effect transistor
US10510762B2 (en) 2016-12-15 2019-12-17 Taiwan Semiconductor Manufacturing Co., Ltd. Source and drain formation technique for fin-like field effect transistor
US10879370B2 (en) 2016-12-15 2020-12-29 Taiwan Semiconductor Manufacturing Company, Ltd. Etching back and selective deposition of metal gate
TWI746673B (zh) 2016-12-15 2021-11-21 台灣積體電路製造股份有限公司 鰭式場效電晶體裝置及其共形傳遞摻雜方法
US11476349B2 (en) 2016-12-15 2022-10-18 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET structures and methods of forming the same
DE102017117794B4 (de) 2016-12-15 2025-01-02 Taiwan Semiconductor Manufacturing Co., Ltd. Zurückätzen und selektive abscheidung eines metall-gates
US10002796B1 (en) 2016-12-15 2018-06-19 Taiwan Semiconductor Manufacturing Co., Ltd. Dual epitaxial growth process for semiconductor device
US10269646B2 (en) 2016-12-15 2019-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
DE102017127208B4 (de) 2016-12-15 2025-12-11 Taiwan Semiconductor Manufacturing Co., Ltd. Finfet-strukturen und verfahren zu deren herstellung
DE102017126881B4 (de) 2016-12-15 2024-04-25 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET-Strukturen und Verfahren zu ihrer Ausbildung
US10121675B2 (en) 2016-12-29 2018-11-06 Taiwan Semiconductor Manufacturing Co., Ltd Semiconductor device and a method for fabricating the same
US10325911B2 (en) 2016-12-30 2019-06-18 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
DE102017121297B4 (de) 2016-12-30 2021-09-23 Taiwan Semiconductor Manufacturing Co. Ltd. Halbleitervorrichtung und Herstellungsverfahren dafür
DE102017113507A1 (de) 2017-01-09 2018-07-12 Taiwan Semiconductor Manufacturing Co. Ltd. Kontaktstecker und Herstellungsverfahren
US10516030B2 (en) 2017-01-09 2019-12-24 Taiwan Semiconductor Manufacturing Company, Ltd. Contact plugs and methods forming same
US10804375B2 (en) 2017-03-23 2020-10-13 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method for manufacturing the same
US10170374B2 (en) 2017-03-23 2019-01-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method for manufacturing the same
US11923252B2 (en) 2017-03-23 2024-03-05 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method for manufacturing the same
US10304945B2 (en) 2017-03-24 2019-05-28 Taiwan Semiconductor Manufacturing Co., Ltd. High-speed semiconductor device and method for forming the same
US10950605B2 (en) 2017-03-24 2021-03-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device
US10355095B2 (en) 2017-03-31 2019-07-16 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET structure with composite gate helmet
US10090325B1 (en) 2017-03-31 2018-10-02 Taiwan Semiconductor Manufacturing Co., Ltd. Circuit cells having separated gate electrodes
US10090169B1 (en) 2017-03-31 2018-10-02 Globalfoundries Inc. Methods of forming integrated circuit structures including opening filled with insulator in metal gate
US10056473B1 (en) 2017-04-07 2018-08-21 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10163731B2 (en) 2017-04-12 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET semiconductor structure having hybrid substrate and method of fabricating the same
US10269621B2 (en) 2017-04-18 2019-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Contact plugs and methods forming same
US10312332B2 (en) 2017-04-18 2019-06-04 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of forming the same
US10062784B1 (en) 2017-04-20 2018-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Self-aligned gate hard mask and method forming same
US10483380B2 (en) 2017-04-20 2019-11-19 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of manufacturing the same
US10186456B2 (en) 2017-04-20 2019-01-22 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for forming contact plugs with reduced corrosion
US10483266B2 (en) 2017-04-20 2019-11-19 Taiwan Semiconductor Manufacturing Company, Ltd. Flexible merge scheme for source/drain epitaxy regions
US10872980B2 (en) 2017-04-25 2020-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10475908B2 (en) 2017-04-25 2019-11-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of fabricating the same
US10373879B2 (en) 2017-04-26 2019-08-06 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with contracted isolation feature and formation method thereof
US10332786B2 (en) 2017-04-27 2019-06-25 Taiwan Semiconductor Manufacturing Co., Ltd. Method for manufacturing a semiconductor device
US10157997B2 (en) 2017-04-27 2018-12-18 Taiwan Semiconductor Manufacturing Company, Ltd. FinFETs and methods of forming the same
US10141225B2 (en) 2017-04-28 2018-11-27 Taiwan Semiconductor Manufacturing Company, Ltd. Metal gates of transistors having reduced resistivity
US10115825B1 (en) 2017-04-28 2018-10-30 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and method for FinFET device with asymmetric contact
US10319832B2 (en) 2017-04-28 2019-06-11 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET device and method of forming same
US10170318B2 (en) 2017-04-28 2019-01-01 Taiwan Semiconductor Manufacturing Company, Ltd. Self-aligned contact and manufacturing method thereof
DE102017122702B4 (de) 2017-04-28 2023-11-09 Taiwan Semiconductor Manufacturing Co. Ltd. Struktur und Verfahren für FinFET-Vorrichtung mit asymmetrischem Kontakt
US10157785B2 (en) 2017-05-01 2018-12-18 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US10332965B2 (en) 2017-05-08 2019-06-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of fabricating the same
US10043712B1 (en) 2017-05-17 2018-08-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and manufacturing method thereof
US10050149B1 (en) 2017-05-18 2018-08-14 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structure for semiconductor device
US10665569B2 (en) 2017-05-25 2020-05-26 Taiwan Semiconductor Manufacturing Co., Ltd. Vertical transistor device and method for fabricating the same
US10269800B2 (en) 2017-05-26 2019-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Vertical gate semiconductor device with steep subthreshold slope
US10269636B2 (en) 2017-05-26 2019-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of fabricating the same
US10636910B2 (en) 2017-05-30 2020-04-28 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method of forming the same
US10163628B1 (en) 2017-05-31 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Lattice-mismatched semiconductor substrates with defect reduction
US10522392B2 (en) 2017-05-31 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of fabricating the same
US10163621B1 (en) 2017-05-31 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Method and structure for FinFET devices
US10147787B1 (en) 2017-05-31 2018-12-04 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and manufacturing method thereof
US9991268B1 (en) 2017-06-08 2018-06-05 Taiwan Semiconductor Manufacturing Co., Ltd. SRAM cell structure
US9911736B1 (en) * 2017-06-14 2018-03-06 Globalfoundries Inc. Method of forming field effect transistors with replacement metal gates and contacts and resulting structure
US9991262B1 (en) 2017-06-15 2018-06-05 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device on hybrid substrate and method of manufacturing the same
US10727131B2 (en) 2017-06-16 2020-07-28 Taiwan Semiconductor Manufacturing Co., Ltd. Source and drain epitaxy re-shaping
US10283414B2 (en) 2017-06-20 2019-05-07 Taiwan Semiconductor Manufacturing Co., Ltd. Isolation manufacturing method for semiconductor structures
US10510840B2 (en) 2017-06-20 2019-12-17 Taiwan Semiconductor Manufacturing Co., Ltd. GAA FET with u-shaped channel
US11334703B2 (en) 2017-06-29 2022-05-17 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit layouts with fill feature shapes
DE102018104944B4 (de) 2017-06-30 2024-12-12 Parabellum Strategic Opportunities Fund Llc Halbleiter-Bauelement mit einer Auskleidungsschicht mit einem konfigurierten Profil und Verfahren zu dessen Herstellung
US10720358B2 (en) 2017-06-30 2020-07-21 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having a liner layer with a configured profile and method of fabricating thereof
US10483267B2 (en) 2017-06-30 2019-11-19 Taiwan Semiconductor Manufacturing Co., Ltd. Eight-transistor static random-access memory, layout thereof, and method for manufacturing the same
US10269940B2 (en) 2017-06-30 2019-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
TWI743252B (zh) 2017-06-30 2021-10-21 台灣積體電路製造股份有限公司 鰭狀場效電晶體裝置與其形成方法
US10347764B2 (en) 2017-06-30 2019-07-09 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with multi-layered source/drain regions having different dopant concentrations and manufacturing method thereof
DE102017127204A1 (de) 2017-06-30 2019-01-03 Taiwan Semiconductor Manufacturing Co., Ltd. Verfahren zum ausbilden geformter epitaktischer source-/drain-schichten eines halbleiterbauteils
US10516037B2 (en) 2017-06-30 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming shaped source/drain epitaxial layers of a semiconductor device
US10396206B2 (en) * 2017-07-07 2019-08-27 Globalfoundries Inc. Gate cut method
US10468529B2 (en) 2017-07-11 2019-11-05 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device structure with etch stop layer
US10181524B1 (en) 2017-07-14 2019-01-15 Taiwan Semiconductor Manufacturing Co., Ltd. Vertical transistor device and method for fabricating the same
US10157988B1 (en) 2017-07-18 2018-12-18 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor (FinFET) device structure with dual spacers and method for forming the same
US10211307B2 (en) 2017-07-18 2019-02-19 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of manufacturing inner spacers in a gate-all-around (GAA) FET through multi-layer spacer replacement
US10134640B1 (en) 2017-07-18 2018-11-20 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure with semiconductor wire
US10727226B2 (en) 2017-07-18 2020-07-28 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and method for forming the same
US10403734B2 (en) 2017-07-21 2019-09-03 Globalfoundries Inc. Semiconductor device with reduced gate height budget
US10290635B2 (en) 2017-07-26 2019-05-14 Taiwan Semiconductor Manufacturing Co., Ltd. Buried interconnect conductor
US10283623B2 (en) 2017-07-27 2019-05-07 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuits with gate stacks
US10141430B1 (en) 2017-07-27 2018-11-27 Taiwan Semiconductor Manufacturing Co., Ltd. Fin structures with uniform threshold voltage distribution and method of making the same
US10283503B2 (en) 2017-07-31 2019-05-07 Taiwan Semiconductor Manufacturing Co., Ltd. Metal gate structure and methods thereof
US10685884B2 (en) 2017-07-31 2020-06-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device including a Fin-FET and method of manufacturing the same
DE102017126027B4 (de) 2017-07-31 2022-02-24 Taiwan Semiconductor Manufacturing Co., Ltd. Metallgatestruktur und Verfahren
DE102018114209A1 (de) 2017-07-31 2019-01-31 Taiwan Semiconductor Manufacturing Co., Ltd. Source -und-drain-struktur mit einem reduzierten kontaktwiderstand und einer verbesserten beweglichkeit
US10510875B2 (en) 2017-07-31 2019-12-17 Taiwan Semiconductor Manufacturing Co., Ltd. Source and drain structure with reduced contact resistance and enhanced mobility
US10269624B2 (en) 2017-07-31 2019-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Contact plugs and methods of forming same
US10515952B2 (en) 2017-08-04 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor (FinFET) device structure and method for forming the same
US10833152B2 (en) 2017-08-15 2020-11-10 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10515850B2 (en) 2017-08-25 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method and IC design with non-linear power rails
US10529833B2 (en) 2017-08-28 2020-01-07 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit with a fin and gate structure and method making the same
US10504898B2 (en) 2017-08-28 2019-12-10 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field-effect transistor structure and method for forming the same
US10403714B2 (en) 2017-08-29 2019-09-03 Taiwan Semiconductor Manufacturing Co., Ltd. Fill fins for semiconductor devices
US10403550B2 (en) 2017-08-30 2019-09-03 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US10699956B2 (en) 2017-08-30 2020-06-30 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US10685880B2 (en) 2017-08-30 2020-06-16 Taiwan Semiconductor Manufacturing Co., Ltd. Methods for reducing contact depth variation in semiconductor fabrication
US10276718B2 (en) 2017-08-31 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET having a relaxation prevention anchor
US10374059B2 (en) 2017-08-31 2019-08-06 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device structure with nanowires
US10163904B1 (en) 2017-08-31 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure
US10276720B2 (en) 2017-08-31 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming fin field effect transistor (FINFET) device structure
US10629679B2 (en) 2017-08-31 2020-04-21 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US10446555B2 (en) 2017-08-31 2019-10-15 Taiwan Semiconductor Manufacturing Company, Ltd. Buried metal track and methods forming same
US10236220B1 (en) * 2017-08-31 2019-03-19 Taiwan Semiconductor Manufacturing Company, Ltd. Fin field-effect transistor device and method
US10164053B1 (en) 2017-08-31 2018-12-25 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US10535525B2 (en) 2017-08-31 2020-01-14 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming semiconductor device structure
US10522680B2 (en) 2017-08-31 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. Finfet semiconductor device structure with capped source drain structures
US10483378B2 (en) 2017-08-31 2019-11-19 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial features confined by dielectric fins and spacers
US10332985B2 (en) 2017-08-31 2019-06-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10297508B2 (en) 2017-08-31 2019-05-21 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US10121870B1 (en) 2017-08-31 2018-11-06 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure with strain-relaxed buffer
US10276445B2 (en) 2017-08-31 2019-04-30 Taiwan Semiconductor Manfacturing Co., Ltd. Leakage reduction methods and structures thereof
US10475654B2 (en) 2017-08-31 2019-11-12 Taiwan Semiconductor Manufacturing Company, Ltd. Wrap-around contact plug and method manufacturing same
US10515896B2 (en) 2017-08-31 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Interconnect structure for semiconductor device and methods of fabrication thereof
US10497577B2 (en) 2017-08-31 2019-12-03 Taiwan Semiconductor Manufacturing Company, Ltd. Fin field-effect transistor device and method
US10290548B2 (en) 2017-08-31 2019-05-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure with semiconductor wire
US10374058B2 (en) 2017-09-15 2019-08-06 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method for manufacturing the same
US10453752B2 (en) 2017-09-18 2019-10-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a gate-all-around semiconductor device
US10361133B2 (en) 2017-09-18 2019-07-23 Taiwan Semiconductor Manufacturing Co., Ltd. High-K metal gate and method for fabricating the same
US10679988B2 (en) 2017-09-18 2020-06-09 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device including FinFETS having different channel heights and manufacturing method thereof
US10505040B2 (en) 2017-09-25 2019-12-10 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device having a gate with ferroelectric layer
US10468275B2 (en) 2017-09-27 2019-11-05 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor fabrication with electrochemical apparatus
US10868181B2 (en) 2017-09-27 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure with blocking layer and method for forming the same
US10700177B2 (en) 2017-09-27 2020-06-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with low resistivity contact structure and method for forming the same
US10269914B2 (en) 2017-09-27 2019-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10297636B2 (en) 2017-09-28 2019-05-21 Taiwan Semiconductor Manufacturing Company, Ltd. Method for fabricating complementary metal-oxide-semiconductor image sensor
US10325993B2 (en) 2017-09-28 2019-06-18 Taiwan Semiconductor Manufacturing Co., Ltd. Gate all around device and fabrication thereof
US10515687B2 (en) 2017-09-28 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Strap cell design for static random access memory (SRAM) array
US10516032B2 (en) 2017-09-28 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device
US10153278B1 (en) 2017-09-28 2018-12-11 Taiwan Semiconductor Manufacturing Co., Ltd. Fin-type field effect transistor structure and manufacturing method thereof
US10074558B1 (en) 2017-09-28 2018-09-11 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET structure with controlled air gaps
US10535736B2 (en) 2017-09-28 2020-01-14 Taiwan Semiconductor Manufacturing Co., Ltd. Fully strained channel
US10636673B2 (en) 2017-09-28 2020-04-28 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming semiconductor device structure
US10283639B2 (en) 2017-09-28 2019-05-07 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method for forming the same
US10157790B1 (en) 2017-09-28 2018-12-18 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method for manufacturing the same
US10686074B2 (en) 2017-09-28 2020-06-16 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor (FinFET) device structure with doped region in source/drain structure and method for forming the same
US10763114B2 (en) 2017-09-28 2020-09-01 Taiwan Semiconductor Manufacturing Co., Ltd. Method of fabricating gate oxide of semiconductor device
US10763104B2 (en) 2017-09-28 2020-09-01 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming differential etch stop layer using directional plasma to activate surface on device structure
US10403545B2 (en) 2017-09-28 2019-09-03 Taiwan Semiconductor Manufacturing Co., Ltd. Power reduction in finFET structures
US10497624B2 (en) 2017-09-29 2019-12-03 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
DE102018121263B4 (de) 2017-09-29 2025-05-22 Taiwan Semiconductor Manufacturing Company, Ltd. Dummy-finnenstrukturen und verfahren zu deren herstellung
US10510580B2 (en) 2017-09-29 2019-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. Dummy fin structures and methods of forming same
US10490458B2 (en) 2017-09-29 2019-11-26 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of cutting metal gates and structures formed thereof
US10811320B2 (en) * 2017-09-29 2020-10-20 Taiwan Semiconductor Manufacturing Company, Ltd. Footing removal in cut-metal process
US10505021B2 (en) 2017-09-29 2019-12-10 Taiwan Semiconductor Manufacturing Company, Ltd. FinFet device and method of forming the same
US10509334B2 (en) 2017-09-29 2019-12-17 Taiwan Semiconductor Manufacturing Co., Ltd. Methods and apparatus for removing contamination from lithographic tool
US10483372B2 (en) 2017-09-29 2019-11-19 Taiwan Semiconductor Manufacturing Co., Ltd. Spacer structure with high plasma resistance for semiconductor devices
US10804367B2 (en) 2017-09-29 2020-10-13 Taiwan Semiconductor Manufacturing Co., Ltd. Gate stacks for stack-fin channel I/O devices and nanowire channel core devices
DE102018108821B4 (de) 2017-09-29 2024-12-12 Taiwan Semiconductor Manufacturing Co. Ltd. Verfahren zur herstellung einer halbleitervorrichtung und halbleitervorrichtung
US10269965B1 (en) 2017-10-25 2019-04-23 Taiwan Semiconductor Manufacturing Company Ltd. Multi-gate semiconductor device and method for forming the same
US10672742B2 (en) 2017-10-26 2020-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10535737B2 (en) 2017-10-27 2020-01-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10347720B2 (en) 2017-10-30 2019-07-09 Taiwan Semiconductor Manufacturing Co., Ltd. Doping for semiconductor device with conductive feature
US10867866B2 (en) 2017-10-30 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10818777B2 (en) 2017-10-30 2020-10-27 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US10325912B2 (en) 2017-10-30 2019-06-18 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure cutting process and structures formed thereby
US10714592B2 (en) 2017-10-30 2020-07-14 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US11380803B2 (en) 2017-10-30 2022-07-05 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
US10522418B2 (en) 2017-10-30 2019-12-31 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and method for manufacturing the same
US10868127B2 (en) 2017-10-30 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Gate-all-around structure and manufacturing method for the same
US10217815B1 (en) 2017-10-30 2019-02-26 Taiwan Semiconductor Manufacturing Co., Ltd Integrated circuit device with source/drain barrier
US11444173B2 (en) 2017-10-30 2022-09-13 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure with salicide layer and method for forming the same
US10847634B2 (en) 2017-10-30 2020-11-24 Taiwan Semiconductor Manufacturing Company, Ltd. Field effect transistor and method of forming the same
US10163623B1 (en) 2017-10-31 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Etch method with surface modification treatment for forming semiconductor structure
US10535738B2 (en) 2017-10-31 2020-01-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and manufacturing method of the same
US10276693B1 (en) 2017-10-31 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10355105B2 (en) 2017-10-31 2019-07-16 Taiwan Semiconductor Manufacturing Company, Ltd. Fin field-effect transistors and methods of forming the same
US10629497B2 (en) 2017-11-02 2020-04-21 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET device structure and method for enlarging gap-fill window
US11404413B2 (en) 2017-11-08 2022-08-02 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
US10403551B2 (en) 2017-11-08 2019-09-03 Taiwan Semiconductor Manufacturing Co., Ltd. Source/drain features with an etch stop layer
US10872762B2 (en) 2017-11-08 2020-12-22 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming silicon oxide layer and semiconductor structure
US10431696B2 (en) 2017-11-08 2019-10-01 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device structure with nanowire
US10424588B2 (en) 2017-11-09 2019-09-24 Taiwan Semiconductor Manufacturing Co., Ltd. Cutting metal gates in fin field effect transistors
US10439135B2 (en) 2017-11-09 2019-10-08 Taiwan Semiconductor Manufacturing Co., Ltd. VIA structure and methods of forming the same
DE102018107038B4 (de) 2017-11-09 2022-06-09 Taiwan Semiconductor Manufacturing Co., Ltd. Verfahren zur herstellung einer durchkontaktierungsstruktur
US10367078B2 (en) 2017-11-09 2019-07-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices and FinFET devices having shielding layers
US10680084B2 (en) 2017-11-10 2020-06-09 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial structures for fin-like field effect transistors
US10847622B2 (en) 2017-11-13 2020-11-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming source/drain structure with first and second epitaxial layers
US10727178B2 (en) 2017-11-14 2020-07-28 Taiwan Semiconductor Manufacturing Co., Ltd. Via structure and methods thereof
US10283624B1 (en) 2017-11-14 2019-05-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and method for forming the same
US10629708B2 (en) 2017-11-14 2020-04-21 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure with barrier layer and method for forming the same
US10515948B2 (en) 2017-11-15 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device including vertical routing structure and method for manufacturing the same
US10515809B2 (en) 2017-11-15 2019-12-24 Taiwan Semiconductor Manufacturing Company, Ltd. Selective high-K formation in gate-last process
US10468527B2 (en) 2017-11-15 2019-11-05 Taiwan Semiconductor Manufacturing Co., Ltd. Metal gate structure and methods of fabricating thereof
US10396184B2 (en) 2017-11-15 2019-08-27 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit device fins
US10680106B2 (en) 2017-11-15 2020-06-09 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming source/drain epitaxial stacks
US10468530B2 (en) 2017-11-15 2019-11-05 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure with source/drain multi-layer structure and method for forming the same
US10840358B2 (en) 2017-11-15 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Method for manufacturing semiconductor structure with source/drain structure having modified shape
US10964590B2 (en) 2017-11-15 2021-03-30 Taiwan Semiconductor Manufacturing Co., Ltd. Contact metallization process
US10483168B2 (en) 2017-11-15 2019-11-19 Taiwan Semiconductor Manufacturing Co., Ltd. Low-k gate spacer and formation thereof
US10707318B2 (en) 2017-11-15 2020-07-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of manufacturing the same
US10269576B1 (en) 2017-11-15 2019-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Etching and structures formed thereby
US10355102B2 (en) 2017-11-15 2019-07-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of manufacturing the same
US10170322B1 (en) 2017-11-16 2019-01-01 Taiwan Semiconductor Manufacturing Co., Ltd. Atomic layer deposition based process for contact barrier layer
US10978351B2 (en) * 2017-11-17 2021-04-13 Taiwan Semiconductor Manufacturing Co., Ltd. Etch stop layer between substrate and isolation structure
US10629693B2 (en) 2017-11-17 2020-04-21 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure with barrier layer and method for forming the same
US10658508B2 (en) 2017-11-17 2020-05-19 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with low resistance contact
US10269648B1 (en) 2017-11-17 2019-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Method of fabricating a semiconductor device structure
US10510619B2 (en) 2017-11-17 2019-12-17 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method for manufacturing the same
US10867859B2 (en) 2017-11-17 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of fabricating semiconductor devices having isolation structures with liners
DE102018124812B4 (de) 2017-11-20 2024-06-20 Taiwan Semiconductor Manufacturing Co., Ltd. Gate-dielektrium wahrender gate-schneidprozess
US10727117B2 (en) 2017-11-20 2020-07-28 Taiwan Semiconductor Manufacturing Company Ltd. Method for manufacturing semiconductor structure
US10699940B2 (en) 2017-11-20 2020-06-30 Taiwan Semiconductor Manufacturing Co., Ltd. Gate dielectric preserving gate cut process
US11037924B2 (en) 2017-11-21 2021-06-15 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming source/drain contacts
US10504990B2 (en) 2017-11-21 2019-12-10 Taiwan Semiconductor Manufacturing Co., Ltd. Isolation features and methods of fabricating the same
US10418453B2 (en) 2017-11-22 2019-09-17 Taiwan Semiconductor Manufacturing Co., Ltd. Forming metal contacts on metal gates
US10867809B2 (en) 2017-11-22 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Laser anneal process
US10497628B2 (en) 2017-11-22 2019-12-03 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of forming epitaxial structures in fin-like field effect transistors
US10672613B2 (en) 2017-11-22 2020-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming semiconductor structure and semiconductor device
US10340190B2 (en) 2017-11-24 2019-07-02 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
US10276449B1 (en) 2017-11-24 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming fin field effect transistor (FinFET) device structure
US10374038B2 (en) 2017-11-24 2019-08-06 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device source/drain region with arsenic-containing barrier region
US10361279B2 (en) 2017-11-24 2019-07-23 Taiwan Semiconductor Manufacturing Co., Ltd. Method for manufacturing FinFET structure with doped region
US10867986B2 (en) 2017-11-24 2020-12-15 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device having fin structure
US10658362B2 (en) 2017-11-27 2020-05-19 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor component and fabricating method thereof
US10332789B2 (en) 2017-11-27 2019-06-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with TiN adhesion layer for forming a contact plug
US10971493B2 (en) 2017-11-27 2021-04-06 Taiwan Semiconductor Manufacturing Company Ltd. Integrated circuit device with high mobility and system of forming the integrated circuit
US10714475B2 (en) 2017-11-27 2020-07-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10840154B2 (en) 2017-11-28 2020-11-17 Taiwan Semiconductor Manufacturing Co.. Ltd. Method for forming semiconductor structure with high aspect ratio
US10790142B2 (en) 2017-11-28 2020-09-29 Taiwan Semiconductor Manufacturing Co., Ltd. Selective capping processes and structures formed thereby
US10714334B2 (en) 2017-11-28 2020-07-14 Taiwan Semiconductor Manufacturing Co., Ltd. Conductive feature formation and structure
US10777466B2 (en) 2017-11-28 2020-09-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor Fin cutting process and structures formed thereby
DE102018104004B4 (de) 2017-11-29 2021-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Gate-Struktur und Verfahren mit verbessertem Gate-Kontakt und verbesserter Schwellenspannung
US10867998B1 (en) 2017-11-29 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure cutting process and structures formed thereby
US10312089B1 (en) 2017-11-29 2019-06-04 Taiwan Semiconductor Manufacturing Co., Ltd. Methods for controlling an end-to-end distance in semiconductor device
US10510838B2 (en) 2017-11-29 2019-12-17 Taiwan Semiconductor Manufacturing Co., Ltd. High surface dopant concentration formation processes and structures formed thereby
US10804378B2 (en) 2017-11-29 2020-10-13 Taiwan Semiconductor Manufacturing Co., Ltd. Method for semiconductor device fabrication with improved epitaxial source/drain proximity control
US11114549B2 (en) 2017-11-29 2021-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure cutting process and structures formed thereby
US10840376B2 (en) 2017-11-29 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structure and method with enhanced gate contact and threshold voltage
US10164048B1 (en) 2017-11-29 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming source/drain contacts
US10510889B2 (en) 2017-11-29 2019-12-17 Taiwan Semiconductor Manufacturing Co., Ltd. P-type strained channel in a fin field effect transistor (FinFET) device
DE102018128925B4 (de) 2017-11-30 2024-04-25 Taiwan Semiconductor Manufacturing Co., Ltd. Verfahren zur Herstellung einer Halbleitervorrichtung und Halbleitervorrichtung
DE102018124674A1 (de) 2017-11-30 2019-06-06 Taiwan Semiconductor Manufacturing Co., Ltd. Kontaktstifte für Halbleiter-Bauelement und Verfahren zu deren Herstellung
US10804180B2 (en) 2017-11-30 2020-10-13 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method for manufacturing the same
US11011618B2 (en) 2017-11-30 2021-05-18 Taiwan Semiconductor Manufacturing Co., Ltd. Circuit devices with gate seals
US10361120B2 (en) 2017-11-30 2019-07-23 Taiwan Semiconductor Manufacturing Co., Ltd. Conductive feature formation and structure
US10446669B2 (en) 2017-11-30 2019-10-15 Taiwan Semiconductor Manufacturing Co., Ltd. Source and drain surface treatment for multi-gate field effect transistors
US10700066B2 (en) 2017-11-30 2020-06-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10475929B2 (en) 2017-11-30 2019-11-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
DE102018107721B4 (de) * 2017-11-30 2023-10-19 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleitervorrichtung und Herstellungsverfahren
US10861745B2 (en) 2017-11-30 2020-12-08 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacture
US10497778B2 (en) 2017-11-30 2019-12-03 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10319581B1 (en) 2017-11-30 2019-06-11 Taiwan Semiconductor Manufacturing Co., Ltd. Cut metal gate process for reducing transistor spacing
DE102018102448B4 (de) 2017-11-30 2023-06-15 Taiwan Semiconductor Manufacturing Co., Ltd. Bildung und Struktur leitfähiger Merkmale
US10629749B2 (en) 2017-11-30 2020-04-21 Taiwan Semiconductor Manufacturing Co., Ltd. Method of treating interfacial layer on silicon germanium
US10366982B2 (en) 2017-11-30 2019-07-30 Taiwan Semiconductor Manufacturing Co., Ltd. Structure with embedded memory device and contact isolation scheme
US10177038B1 (en) 2017-11-30 2019-01-08 Taiwan Semiconductor Manufacturing Co., Ltd. Prevention of contact bottom void in semiconductor fabrication
US10672889B2 (en) 2017-11-30 2020-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10847413B2 (en) 2017-11-30 2020-11-24 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming contact plugs for semiconductor device
DE102018125143A1 (de) 2017-11-30 2019-06-06 Taiwan Semiconductor Manufacturing Co., Ltd. Schaltkreisvorrichtungen mit gatesiegeln
US10867833B2 (en) 2017-11-30 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Buried metal for FinFET device and method
US10516039B2 (en) 2017-11-30 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10460994B2 (en) 2017-11-30 2019-10-29 Taiwan Semiconductor Manufacturing Co., Ltd. Residue-free metal gate cutting for fin-like field effect transistor
US10504899B2 (en) 2017-11-30 2019-12-10 Taiwan Semiconductor Manufacturing Co., Ltd. Transistors with various threshold voltages and method for manufacturing the same
US10748774B2 (en) 2017-11-30 2020-08-18 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10923595B2 (en) 2017-11-30 2021-02-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having a SiGe epitaxial layer containing Ga
DE102018106581B4 (de) 2017-11-30 2020-07-09 Taiwan Semiconductor Manufacturing Co. Ltd. Halbleiter-Bauelement und Verfahren zu dessen Herstellung
US10510874B2 (en) * 2017-11-30 2019-12-17 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device
US10515849B2 (en) 2017-11-30 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device, interconnection structure and method for forming the same
US10756114B2 (en) 2017-12-28 2020-08-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor circuit with metal structure and manufacturing method
US10461171B2 (en) 2018-01-12 2019-10-29 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with metal gate stacks
US10658225B2 (en) 2018-01-19 2020-05-19 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET devices and methods of forming the same
US10608094B2 (en) 2018-01-23 2020-03-31 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of forming the same
US10651292B2 (en) 2018-02-19 2020-05-12 Taiwan Semiconductor Manufacturing Co., Ltd. Dual metal via for contact resistance reduction
US10867851B2 (en) 2018-02-26 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Contact structure and semiconductor device and method of forming the same
US10522656B2 (en) 2018-02-28 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd Forming epitaxial structures in fin field effect transistors
US11031286B2 (en) 2018-03-01 2021-06-08 Taiwan Semiconductor Manufacturing Co., Ltd. Conductive feature formation and structure
US10535748B2 (en) 2018-03-01 2020-01-14 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming a contact with a silicide region
US10475702B2 (en) 2018-03-14 2019-11-12 Taiwan Semiconductor Manufacturing Co., Ltd. Conductive feature formation and structure using bottom-up filling deposition
US10468409B2 (en) 2018-03-14 2019-11-05 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET device with oxidation-resist STI liner structure
US10943822B2 (en) 2018-03-15 2021-03-09 Taiwan Semiconductor Manufacturing Co., Ltd. Forming gate line-end of semiconductor structures
US10290535B1 (en) 2018-03-22 2019-05-14 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit fabrication with a passivation agent
US10867844B2 (en) 2018-03-28 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Wet cleaning with tunable metal recess for VIA plugs
US10804140B2 (en) 2018-03-29 2020-10-13 Taiwan Semiconductor Manufacturing Co., Ltd. Interconnect formation and structure
US11056392B2 (en) 2018-03-29 2021-07-06 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET devices having gate stacks with protruding parts and method of forming the same
US10510776B2 (en) 2018-03-29 2019-12-17 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device with common active area and method for manufacturing the same
US10763363B2 (en) 2018-04-10 2020-09-01 Taiwan Semiconductor Manufacturing Co., Ltd. Gradient doped region of recessed fin forming a FinFET device
US10854715B2 (en) 2018-04-13 2020-12-01 Taiwan Semiconductor Manufacturing Co., Ltd. Supportive layer in source/drains of FinFET devices
US10522410B2 (en) * 2018-04-20 2019-12-31 Globalfoundries Inc. Performing concurrent diffusion break, gate and source/drain contact cut etch processes
US11270994B2 (en) 2018-04-20 2022-03-08 Taiwan Semiconductor Manufacturing Company, Ltd. Gate structure, fin field-effect transistor, and method of manufacturing fin-field effect transistor
US10522546B2 (en) 2018-04-20 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd FinFET devices with dummy fins having multiple dielectric layers
US10854714B2 (en) 2018-04-20 2020-12-01 Taiwan Semiconductor Manufacturing Co., Ltd. Germanium containing nanowires and methods for forming the same
US10276676B1 (en) 2018-04-27 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of forming metal gate isolation
US10629492B2 (en) 2018-04-27 2020-04-21 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structure having a dielectric gate and methods thereof
US10867848B2 (en) 2018-04-30 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US10276719B1 (en) 2018-04-30 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US10699943B2 (en) 2018-04-30 2020-06-30 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming contacts in a semiconductor device
US10522622B2 (en) 2018-05-14 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-gate semiconductor device and method for forming the same
US11245005B2 (en) 2018-05-14 2022-02-08 Taiwan Semiconductor Manufacturing Co., Ltd. Method for manufacturing semiconductor structure with extended contact structure
US11398476B2 (en) 2018-05-16 2022-07-26 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with hybrid fins
US10756089B2 (en) 2018-05-16 2020-08-25 Taiwan Semiconductor Manufacturing Co., Ltd. Hybrid semiconductor transistor structure and manufacturing method for the same
US10685966B2 (en) 2018-05-16 2020-06-16 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuits with contacting gate structures
US10636878B2 (en) 2018-05-18 2020-04-28 Taiwan Semiconductor Manufacturing Co., Ltd. Steep sloped vertical tunnel field-effect transistor
US10269655B1 (en) 2018-05-30 2019-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US10529860B2 (en) 2018-05-31 2020-01-07 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and method for FinFET device with contact over dielectric gate
US10504775B1 (en) 2018-05-31 2019-12-10 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of forming metal layer structures in semiconductor devices
US10529414B2 (en) 2018-05-31 2020-01-07 Taiwan Semiconductor Manufacturing Co., Ltd. SRAM cell having SiGe PMOS fin lines
US10825933B2 (en) 2018-06-11 2020-11-03 Taiwan Semiconductor Manufacturing Co., Ltd. Gate-all-around structure and manufacturing method for the same
US10644125B2 (en) 2018-06-14 2020-05-05 Taiwan Semiconductor Manufacturing Co., Ltd. Metal gates and manufacturing methods thereof
US10522390B1 (en) 2018-06-21 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. Shallow trench isolation for integrated circuits
US10522662B1 (en) 2018-06-22 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET device with T-shaped fin and method for forming the same
US11107902B2 (en) 2018-06-25 2021-08-31 Taiwan Semiconductor Manufacturing Company, Ltd. Dielectric spacer to prevent contacting shorting
US11043556B2 (en) 2018-06-26 2021-06-22 Taiwan Semiconductor Manufacturing Co., Ltd. Local epitaxy nanofilms for nanowire stack GAA device
US10651314B2 (en) 2018-06-26 2020-05-12 Taiwan Semiconductor Manufacturing Co., Ltd. Nanowire stack GAA device with inner spacer and methods for producing the same
US10950434B2 (en) 2018-06-27 2021-03-16 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of reducing gate spacer loss during semiconductor manufacturing
US10790391B2 (en) 2018-06-27 2020-09-29 Taiwan Semiconductor Manufacturing Co., Ltd. Source/drain epitaxial layer profile
US10840153B2 (en) 2018-06-27 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Notched gate structure fabrication
US11410890B2 (en) 2018-06-28 2022-08-09 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial layers in source/drain contacts and methods of forming the same
US11694933B2 (en) 2018-06-28 2023-07-04 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of forming metal gate spacer
US10665673B2 (en) 2018-06-28 2020-05-26 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit structure with non-gated well tap cell
US11355339B2 (en) 2018-06-29 2022-06-07 Taiwan Semiconductor Manufacturing Company, Ltd. Forming nitrogen-containing layers as oxidation blocking layers
US11011623B2 (en) 2018-06-29 2021-05-18 Taiwan Semiconductor Manufacturing Company, Ltd. Method for increasing germanium concentration of FIN and resulting semiconductor device
US11018053B2 (en) 2018-06-29 2021-05-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure with material modification and low resistance plug
US10468500B1 (en) 2018-06-29 2019-11-05 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET fabrication methods
US11081403B2 (en) 2018-06-29 2021-08-03 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of forming contact features in field-effect transistors
US11081356B2 (en) 2018-06-29 2021-08-03 Taiwan Semiconductor Manufacturing Co., Ltd. Method for metal gate cut and structure thereof
US10755917B2 (en) 2018-06-29 2020-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Treatment for adhesion improvement
US11244898B2 (en) 2018-06-29 2022-02-08 Taiwan Semiconductor Manufacturing Co., Ltd Integrated circuit interconnect structures with air gaps
US11296225B2 (en) 2018-06-29 2022-04-05 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET device and method of forming same
US10840375B2 (en) * 2018-06-29 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuits with channel-strain liner
US11031239B2 (en) 2018-06-29 2021-06-08 Taiwan Semiconductor Manufacturing Co., Ltd. Germanium nanosheets and methods of forming the same
US10672899B2 (en) 2018-06-29 2020-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Tunnel field-effect transistor with reduced trap-assisted tunneling leakage
US11315933B2 (en) 2018-06-29 2022-04-26 Taiwan Semiconductor Manufacturing Co., Ltd. SRAM structure and method for forming the same
US10868128B2 (en) 2018-06-29 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Ohmic contact structure, semiconductor device including an ohmic contact structure, and method for forming the same
US11437497B2 (en) 2018-06-29 2022-09-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US10872825B2 (en) 2018-07-02 2020-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US10861750B2 (en) 2018-07-02 2020-12-08 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US10998310B2 (en) 2018-07-09 2021-05-04 Taiwan Semiconductor Manufacturing Company Ltd. Fins with wide base in a FINFET
US11114566B2 (en) 2018-07-12 2021-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of manufacturing the same
US11127631B2 (en) 2018-07-13 2021-09-21 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with contact structures
US10541175B1 (en) 2018-07-13 2020-01-21 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with fin structures
US10755945B2 (en) 2018-07-16 2020-08-25 Taiwan Semiconductor Manufacturing Co., Ltd. Metal contacts on metal gates and methods thereof
US10949597B2 (en) 2018-07-16 2021-03-16 Taiwan Semiconductor Manufacturing Co., Ltd. Through-silicon vias in integrated circuit packaging
US11276695B2 (en) 2018-07-16 2022-03-15 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-gate device and related methods
US10672870B2 (en) 2018-07-16 2020-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10854503B2 (en) 2018-07-16 2020-12-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure with air gap and method sealing the air gap
US11205700B2 (en) 2018-07-16 2021-12-21 Taiwan Semiconductor Manufacturing Co., Ltd. Air gap spacer and related methods
US10861969B2 (en) 2018-07-16 2020-12-08 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming FinFET structure with reduced Fin buckling
US11271111B2 (en) 2018-07-26 2022-03-08 Taiwan Semiconductor Manufacturing Co., Ltd. Source/drain structure with barrier in FinFET device and method for forming the same
US11171053B2 (en) 2018-07-27 2021-11-09 Taiwan Semiconductor Manufacturing Co., Ltd. Transistor device and related methods
US10700180B2 (en) 2018-07-27 2020-06-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and manufacturing method thereof
US10580685B2 (en) 2018-07-27 2020-03-03 Globalfoundries Inc. Integrated single diffusion break
US11296236B2 (en) 2018-07-30 2022-04-05 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10707333B2 (en) 2018-07-30 2020-07-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10734474B2 (en) 2018-07-30 2020-08-04 Taiwan Semiconductor Manufacturing Co., Ltd. Metal-insulator-metal structure and methods of fabrication thereof
US10672879B2 (en) 2018-07-30 2020-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming FinFET and gate-all-around FET with selective high-K oxide deposition
US10535667B1 (en) 2018-07-30 2020-01-14 Taiwan Semiconductor Manufacturing Co., Ltd. Memory array and semiconductor chip
US10854716B2 (en) 2018-07-30 2020-12-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with source/drain contact formed using bottom-up deposition
US10840189B2 (en) 2018-07-30 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit devices having raised via contacts and methods of fabricating the same
US10784278B2 (en) 2018-07-30 2020-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. Memory device and manufacturing method thereof
US11978802B2 (en) 2018-07-31 2024-05-07 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET devices and methods of forming the same
US10879394B2 (en) 2018-07-31 2020-12-29 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of forming the same
US11031300B2 (en) 2018-07-31 2021-06-08 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method for manufacturing the same
US11121129B2 (en) 2018-07-31 2021-09-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device
US10658237B2 (en) 2018-07-31 2020-05-19 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices
US11049775B2 (en) 2018-07-31 2021-06-29 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having FinFET with work function layers and method of manufacturing the same
US11211293B2 (en) 2018-07-31 2021-12-28 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET device and methods of forming the same
US11069692B2 (en) 2018-07-31 2021-07-20 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET SRAM cells with dielectric fins
US10629490B2 (en) 2018-07-31 2020-04-21 Taiwan Semiconductor Manufacturing Co., Ltd. Fin-type field-effect transistor device and method of fabricating the same
US10790195B2 (en) 2018-07-31 2020-09-29 Taiwan Semiconductor Manufacturing Co., Ltd. Elongated pattern and formation thereof
US10868182B2 (en) 2018-07-31 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Field effect transistor and manufacturing method thereof
US11217479B2 (en) 2018-07-31 2022-01-04 Taiwan Semiconductor Manufacturing Company, Ltd. Multiple metallization scheme
DE102019115523B4 (de) 2018-07-31 2022-05-25 Taiwan Semiconductor Manufacturing Co. Ltd. Verfahren zur herstellung einer halbleitervorrichtung
US11114303B2 (en) 2018-07-31 2021-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Gate all around device, method for manufacturing FinFET device, and method for manufacturing gate all around device
US10868184B2 (en) 2018-07-31 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor (FinFET) device structure with hard mask layer over gate structure and method for forming the same
US10679995B2 (en) 2018-07-31 2020-06-09 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US10714342B2 (en) * 2018-07-31 2020-07-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of forming the same
US11081395B2 (en) 2018-07-31 2021-08-03 Taiwan Semiconductor Manufacturing Company, Ltd. Fin field effect transistor having air gap and method for manufacturing the same
US11158727B2 (en) 2018-07-31 2021-10-26 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and method for gate-all-around device with extended channel
US11158644B2 (en) 2018-07-31 2021-10-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with field effect transistors of differing gate dielectric thickness on the same substrate and method of manufacturing the same
US10886182B2 (en) 2018-07-31 2021-01-05 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US11227918B2 (en) 2018-07-31 2022-01-18 Taiwan Semiconductor Manufacturing Company, Ltd. Melt anneal source and drain regions
US11038059B2 (en) 2018-07-31 2021-06-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of forming the same
US11038043B2 (en) 2018-07-31 2021-06-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
KR102647231B1 (ko) 2018-08-02 2024-03-13 삼성전자주식회사 반도체 소자 및 이의 제조방법
US10741558B2 (en) 2018-08-14 2020-08-11 Taiwan Semiconductor Manufacturing Co., Ltd. Nanosheet CMOS device and method of forming
US10879393B2 (en) 2018-08-14 2020-12-29 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of fabricating semiconductor devices having gate structure with bent sidewalls
US10840342B2 (en) 2018-08-14 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of forming source/drain contacts in field-effect transistors
US10763255B2 (en) 2018-08-14 2020-09-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US11031383B2 (en) 2018-08-14 2021-06-08 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device
US11362001B2 (en) 2018-08-14 2022-06-14 Taiwan Semiconductor Manufacturing Co., Ltd. Method for manufacturing nanostructures with various widths
US10797161B2 (en) 2018-08-14 2020-10-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method for manufacturing semiconductor structure using selective forming process
US11018226B2 (en) 2018-08-14 2021-05-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10720503B2 (en) 2018-08-14 2020-07-21 Taiwan Semiconductor Manufacturing Co., Ltd. Method for manufacturing semiconductor device
US11211479B2 (en) 2018-08-14 2021-12-28 Taiwan Semiconductor Manufaciuring Co., Ltd. Method of fabricating trimmed fin and fin structure
US10693004B2 (en) 2018-08-14 2020-06-23 Taiwan Semiconductor Manufactruing Co., Ltd. Via structure with low resistivity and method for forming the same
US10679856B2 (en) 2018-08-14 2020-06-09 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor (FinFET) device structure with insulating structure over fin isolation structure and method for forming the same
US11037837B2 (en) 2018-08-15 2021-06-15 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial source/drain and methods of forming same
DE102019120821A1 (de) 2018-08-15 2020-02-20 Taiwan Semiconductor Manufacturing Co., Ltd. Struktur und prozess einer integrierten schaltung mit einer latch-up-unterdrückung
US10522623B1 (en) 2018-08-15 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. Germanium nitride layers on semiconductor structures, and methods for forming the same
US11062963B2 (en) 2018-08-15 2021-07-13 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and process of integrated circuit having latch-up suppression
US11024550B2 (en) 2018-08-16 2021-06-01 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US11152491B2 (en) 2018-08-23 2021-10-19 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming semiconductor device structure with inner spacer layer
US11264380B2 (en) 2018-08-27 2022-03-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of manufacturing the same
US11018011B2 (en) 2018-08-29 2021-05-25 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of forming contact features in semiconductor devices
US10868020B2 (en) 2018-08-29 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Well strap structures and methods of forming the same
US11043578B2 (en) 2018-08-30 2021-06-22 Taiwan Semiconductor Manufacturing Co., Ltd. Nanowire stack GAA device with inner spacer
US10868118B2 (en) 2018-08-31 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of forming epitaxial source/drain features in semiconductor devices
DE102019121750B4 (de) 2018-08-31 2023-09-21 Taiwan Semiconductor Manufacturing Co., Ltd. Metallgatestrukturschneidverfahren und damit hergestellte halbleitervorrichtung
US10867862B2 (en) 2018-08-31 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor method and device
US11043425B2 (en) 2018-08-31 2021-06-22 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of reducing parasitic capacitance in semiconductor devices
US10930564B2 (en) 2018-08-31 2021-02-23 Taiwan Semiconductor Manufacturing Co., Ltd. Metal gate structure cutting process
US11222951B2 (en) 2018-08-31 2022-01-11 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial source/drain structure and method
US10886269B2 (en) 2018-09-18 2021-01-05 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10861928B2 (en) 2018-09-18 2020-12-08 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuits with capacitors
US10714395B2 (en) 2018-09-18 2020-07-14 Taiwan Semiconductor Manufacturing Co., Ltd. Fin isolation structure for FinFET and method of forming the same
US11101385B2 (en) 2018-09-19 2021-08-24 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor (FinFET) device structure with air gap and method for forming the same
US11024721B2 (en) 2018-09-20 2021-06-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US11018012B2 (en) 2018-09-21 2021-05-25 Taiwan Semiconductor Manufacturing Co., Ltd. Contact structures with deposited silicide layers
US10923393B2 (en) 2018-09-24 2021-02-16 Taiwan Semiconductor Manufacturing Co., Ltd. Contacts and interconnect structures in field-effect transistors
US11437385B2 (en) 2018-09-24 2022-09-06 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET SRAM cells with reduced fin pitch
US11245011B2 (en) 2018-09-25 2022-02-08 Taiwan Semiconductor Manufacturing Co., Ltd. Vertical tunnel field-effect transistor with U-shaped gate and band aligner
US10872891B2 (en) 2018-09-25 2020-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuits with gate cut features
US11217585B2 (en) 2018-09-25 2022-01-04 Taiwan Semiconductor Manufacturing Co., Ltd. Forming dielectric dummy fins with different heights in different regions of a semiconductor device
US11158545B2 (en) 2018-09-25 2021-10-26 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of forming isolation features in metal gates
US11038036B2 (en) 2018-09-26 2021-06-15 Taiwan Semiconductor Manufacturing Co., Ltd. Separate epitaxy layers for nanowire stack GAA device
US11563167B2 (en) 2018-09-26 2023-01-24 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and method for an MRAM device with a multi-layer top electrode
US11626507B2 (en) 2018-09-26 2023-04-11 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing FinFETs having barrier layers with specified SiGe doping concentration
US11508827B2 (en) 2018-09-26 2022-11-22 Taiwan Semiconductor Manufacturing Co., Ltd. Air spacer for a gate structure of a transistor
US10804162B2 (en) 2018-09-27 2020-10-13 Taiwan Semiconductor Manufacturing Co., Ltd. Dual channel gate all around transistor device and fabrication methods thereof
US10840152B2 (en) 2018-09-27 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10991630B2 (en) 2018-09-27 2021-04-27 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US10923659B2 (en) 2018-09-27 2021-02-16 Taiwan Semiconductor Manufacturing Co., Ltd. Wafers for use in aligning nanotubes and methods of making and using the same
US11349008B2 (en) 2018-09-27 2022-05-31 Taiwan Semiconductor Manufacturing Co., Ltd. Negative capacitance transistor having a multilayer ferroelectric structure or a ferroelectric layer with a gradient doping profile
US10937691B2 (en) 2018-09-27 2021-03-02 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming an abrasive slurry and methods for chemical-mechanical polishing
US11411090B2 (en) 2018-09-27 2022-08-09 Taiwan Semiconductor Manufacturing Co., Ltd. Contact structures for gate-all-around devices and methods of forming the same
US11031397B2 (en) 2018-09-27 2021-06-08 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-gate device integration with separated Fin-like field effect transistor cells and gate-all-around transistor cells
US11171209B2 (en) 2018-09-27 2021-11-09 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacture
DE102019117176B4 (de) 2018-09-27 2025-08-14 Taiwan Semiconductor Manufacturing Co., Ltd. Finfet-bauelement und verfahren zum ausbilden desselben
US10879355B2 (en) 2018-09-27 2020-12-29 Taiwan Semiconductor Manufacturing Company, Ltd. Profile design for improved device performance
US11024729B2 (en) 2018-09-27 2021-06-01 Taiwan Semiconductor Manufacturing Co., Ltd Method for manufacturing semiconductor device
US10854506B2 (en) 2018-09-27 2020-12-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US11121025B2 (en) 2018-09-27 2021-09-14 Taiwan Semiconductor Manufacturing Company, Ltd. Layer for side wall passivation
US10636702B2 (en) 2018-09-27 2020-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive interconnect structures in integrated circuits
US11374126B2 (en) 2018-09-27 2022-06-28 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET structure with fin top hard mask and method of forming the same
US11450571B2 (en) 2018-09-27 2022-09-20 Taiwan Semiconductor Manufacturing Company Ltd. Method for manufacturing semiconductor structure
US11011636B2 (en) 2018-09-27 2021-05-18 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor (FinFET) device structure with hard mask layer over gate structure and method for forming the same
US10840133B2 (en) 2018-09-27 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure with staggered selective growth
US11004740B2 (en) 2018-09-27 2021-05-11 Taiwan Semicondctor Manufacturing Co., Ltd. Structure and method for interconnection with self-alignment
US10964816B2 (en) 2018-09-27 2021-03-30 Taiwan Semiconductor Manufacturing Co., Ltd. Method and device for boosting performance of FinFETs via strained spacer
US11094826B2 (en) 2018-09-27 2021-08-17 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET device and method of forming same
US11107925B2 (en) 2018-09-28 2021-08-31 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of forming contact features in field-effect transistors
US11069812B2 (en) 2018-09-28 2021-07-20 Taiwan Semiconductor Manufacturing Company, Ltd. Fin field-effect transistor device and method of forming the same
US11289583B2 (en) 2018-09-28 2022-03-29 Taiwan Semiconductor Manufacturing Co., Ltd. High aspect ratio gate structure formation
US10680075B2 (en) 2018-09-28 2020-06-09 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device including source/drain epitaxial layer having facets and manufacturing method thereof
US10910375B2 (en) 2018-09-28 2021-02-02 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of fabrication thereof
US11222958B2 (en) 2018-09-28 2022-01-11 Taiwan Semiconductor Manufacturing Co., Ltd. Negative capacitance transistor with external ferroelectric structure
US10923474B2 (en) 2018-09-28 2021-02-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure having gate-all-around devices
US10916477B2 (en) 2018-09-28 2021-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. Fin field-effect transistor devices and methods of forming the same
US11205714B2 (en) 2018-09-28 2021-12-21 Taiwan Semiconductor Manufacturing Co., Ltd. Dummy structure at fin cut
US10763863B2 (en) 2018-09-28 2020-09-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device for logic and memory co-optimization
US11264237B2 (en) 2018-09-28 2022-03-01 Taiwan Semiconductor Manufacturing Company, Ltd. Method of epitaxy and semiconductor device
US10872805B2 (en) 2018-09-28 2020-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
DE102019119060A1 (de) 2018-09-28 2020-04-02 Taiwan Semiconductor Manufacturing Co., Ltd. Fin-feldeffekttransistorbauelement und verfahren zu seinem bilden
US10790184B2 (en) 2018-09-28 2020-09-29 Taiwan Semiconductor Manufacturing Co., Ltd. Isolation with multi-step structure for FinFET device and method of forming the same
US11094597B2 (en) 2018-09-28 2021-08-17 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with fin structures
US10950725B2 (en) 2018-09-28 2021-03-16 Taiwan Semiconductor Manufacturing Company, Ltd. Epitaxial source/drain structure and method of forming same
US10672665B2 (en) 2018-09-28 2020-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor device structure and method for forming the same
DE102019117897B4 (de) 2018-09-28 2024-03-21 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleitervorrichtung zur logik- und speicher-co-optimierung sowie schaltung
US10867861B2 (en) 2018-09-28 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Fin field-effect transistor device and method of forming the same
DE102019101555B4 (de) 2018-09-28 2023-01-12 Taiwan Semiconductor Manufacturing Company, Ltd. Metall-gate-schneideform
US11024549B2 (en) * 2018-09-28 2021-06-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US11257671B2 (en) 2018-09-28 2022-02-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system of control of epitaxial growth
US11088262B2 (en) 2018-09-28 2021-08-10 Taiwan Semiconductor Manufacturing Co., Ltd. Radical etching in gate formation
US11121036B2 (en) 2018-10-16 2021-09-14 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-gate device and related methods
US11069579B2 (en) 2018-10-19 2021-07-20 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US11380682B2 (en) 2018-10-23 2022-07-05 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuits with FinFET gate structures
US10847373B2 (en) 2018-10-23 2020-11-24 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of forming silicide contact in field-effect transistors
US11107904B2 (en) 2018-10-23 2021-08-31 Taiwan Semiconductor Manufacturing Co., Ltd. Inner spacer formation in multi-gate transistors
US10825721B2 (en) 2018-10-23 2020-11-03 Taiwan Semiconductor Manufacturing Co., Ltd. Insulating cap on contact structure and method for forming the same
US10872906B2 (en) 2018-10-25 2020-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10868018B2 (en) 2018-10-25 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. SRAM structure and connection
US10840251B2 (en) 2018-10-25 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Memory device and manufacturing method
US11133222B2 (en) 2018-10-26 2021-09-28 Taiwan Semiconductor Manufacturing Company Ltd. Method for manufacturing semiconductor structure
US10833167B2 (en) 2018-10-26 2020-11-10 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor (finFET) device structure and method for forming the same
US10985022B2 (en) 2018-10-26 2021-04-20 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structures having interfacial layers
US10950729B2 (en) 2018-10-26 2021-03-16 Taiwan Semiconductor Manufacturing Co., Ltd. Contact structure with insulating cap
US10937876B2 (en) 2018-10-26 2021-03-02 Taiwan Semiconductor Manufacturing Co., Ltd. Source/drain feature to contact interfaces
US10847426B2 (en) 2018-10-28 2020-11-24 Taiwan Semicondutor Manufacturing Company, Ltd. FinFET devices and methods of forming the same
US10943983B2 (en) 2018-10-29 2021-03-09 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuits having protruding interconnect conductors
US10916550B2 (en) 2018-10-30 2021-02-09 Taiwan Semiconductor Manufacturing Co., Ltd. Memory devices with gate all around transistors
US10727134B2 (en) 2018-10-30 2020-07-28 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of fabricating semiconductor devices with gate-all-around structure
US10811255B2 (en) 2018-10-30 2020-10-20 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming semiconductor devices
US11145544B2 (en) 2018-10-30 2021-10-12 Taiwan Semiconductor Manufacturing Co., Ltd. Contact etchback in room temperature ionic liquid
US10868114B2 (en) 2018-10-30 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Isolation structures of semiconductor devices
US10998238B2 (en) 2018-10-31 2021-05-04 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuits with buried interconnect conductors
US11217486B2 (en) 2018-10-31 2022-01-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US10950730B2 (en) 2018-10-31 2021-03-16 Taiwan Semiconductor Manufacturing Co., Ltd. Merged source/drain features
US10971408B2 (en) 2018-10-31 2021-04-06 Taiwan Semiconductor Manufacturing Co., Ltd. Contact air gap formation and structures thereof
US11069791B2 (en) 2018-10-31 2021-07-20 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing semiconductor devices and semiconductor devices
US11087987B2 (en) 2018-10-31 2021-08-10 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US10872826B2 (en) 2018-10-31 2020-12-22 Taiwan Semiconductor Manufacturing Company, Ltd. Fin field-effect transistor device and method
US10867842B2 (en) 2018-10-31 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Method for shrinking openings in forming integrated circuits
US10943818B2 (en) 2018-10-31 2021-03-09 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US11043558B2 (en) 2018-10-31 2021-06-22 Taiwan Semiconductor Manufacturing Co., Ltd. Source/drain metal contact and formation thereof
US11335604B2 (en) 2018-10-31 2022-05-17 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US10944009B2 (en) 2018-10-31 2021-03-09 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of fabricating a FinFET device with wrap-around silicide source/drain structure
US10868183B2 (en) 2018-10-31 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET device and methods of forming the same
US10957604B2 (en) 2018-10-31 2021-03-23 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US11038029B2 (en) 2018-11-08 2021-06-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
EP3651189A1 (en) * 2018-11-08 2020-05-13 IMEC vzw A method for producing a gate cut structure on an array of semiconductor fins
US11296077B2 (en) 2018-11-19 2022-04-05 Taiwan Semiconductor Manufacturing Company, Ltd. Transistors with recessed silicon cap and method forming same
US10868185B2 (en) 2018-11-27 2020-12-15 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method of forming the same
US10923598B2 (en) 2018-11-27 2021-02-16 Taiwan Semiconductor Manufacturing Co., Ltd. Gate-all-around structure and methods of forming the same
US11195951B2 (en) 2018-11-27 2021-12-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with self-aligned wavy contact profile and method of forming the same
US11476196B2 (en) 2018-11-27 2022-10-18 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with multi-layer dielectric
US11257928B2 (en) 2018-11-27 2022-02-22 Taiwan Semiconductor Manufacturing Company, Ltd. Method for epitaxial growth and device
US11276832B2 (en) 2018-11-28 2022-03-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure with diffusion break and method
US11031291B2 (en) 2018-11-28 2021-06-08 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method of forming the same
US11101360B2 (en) 2018-11-29 2021-08-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US11271094B2 (en) 2018-11-29 2022-03-08 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method of manufacturing the same
US11264268B2 (en) 2018-11-29 2022-03-01 Taiwan Semiconductor Mtaiwananufacturing Co., Ltd. FinFET circuit devices with well isolation
US11164944B2 (en) 2018-11-30 2021-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing a semiconductor device
US11107690B2 (en) 2018-11-30 2021-08-31 Taiwan Semiconductor Manufacturing Company, Ltd. Fin field-effect transistor device and method of forming the same
DE102019115490B4 (de) 2018-11-30 2022-10-20 Taiwan Semiconductor Manufacturing Co. Ltd. Halbleiter-bauelement und verfahren zu dessen herstellung
US11387362B2 (en) 2018-11-30 2022-07-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
DE102019103699B4 (de) 2018-11-30 2026-01-22 Taiwan Semiconductor Manufacturing Co., Ltd. Finnen-Feldeffekttransistor-Bauelement und Verfahren zu dessen Herstellung
US10879400B2 (en) 2018-12-24 2020-12-29 Taiwan Semiconductor Manufacturing Company, Ltd. Field effect transistor and method of manufacturing the same
US10720431B1 (en) 2019-01-25 2020-07-21 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of fabricating semiconductor devices having gate-all-around structure with oxygen blocking layers
US10868000B2 (en) 2019-01-25 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure with epitaxial structure and method for forming the same
US11685015B2 (en) 2019-01-28 2023-06-27 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for performing chemical mechanical polishing
US11088150B2 (en) 2019-01-28 2021-08-10 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10825918B2 (en) 2019-01-29 2020-11-03 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
US10777455B2 (en) 2019-01-29 2020-09-15 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-etching process for forming via opening in semiconductor device structure
US11211381B2 (en) 2019-01-29 2021-12-28 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
US11164866B2 (en) 2019-02-20 2021-11-02 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and method for manufacturing the same
US10825919B2 (en) 2019-02-21 2020-11-03 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of fabricating semiconductor devices having gate-all-around structure with inner spacer last process
US11823896B2 (en) 2019-02-22 2023-11-21 Taiwan Semiconductor Manufacturing Co., Ltd. Conductive structure formed by cyclic chemical vapor deposition
US10868171B2 (en) 2019-02-26 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure with gate dielectric layer and method for forming the same
US11217526B2 (en) 2019-02-28 2022-01-04 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with source resistor and manufacturing method thereof
US10535524B1 (en) 2019-03-11 2020-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Tuning threshold voltage through meta stable plasma treatment
US11164796B2 (en) 2019-03-14 2021-11-02 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming semiconductor device structure
US10867867B2 (en) 2019-03-14 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of fabricating semiconductor devices with mixed threshold voltages boundary isolation of multiple gates and structures formed thereby
US11469109B2 (en) 2019-03-14 2022-10-11 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure having metal contact features and method for forming the same
US10872810B2 (en) 2019-03-14 2020-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor device structure and method for forming the same
US10978354B2 (en) 2019-03-15 2021-04-13 Taiwan Semiconductor Manufacturing Co., Ltd. Selective dual silicide formation
US11043594B2 (en) 2019-03-26 2021-06-22 Taiwan Semiconductor Manufacturing Co., Ltd. Low parasitic resistance contact structure
US11201060B2 (en) 2019-04-17 2021-12-14 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with metal gate stack
US11101353B2 (en) 2019-04-17 2021-08-24 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacture
US10971630B2 (en) 2019-04-24 2021-04-06 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure having both gate-all-around devices and planar devices
US11232943B2 (en) 2019-04-24 2022-01-25 Taiwan Semiconductor Manufacturing Co., Ltd. Method and structure for semiconductor interconnect
US11121234B2 (en) 2019-04-24 2021-09-14 Taiwan Semiconductor Manufacturing Co., Ltd. Stacked gate spacers
US11031336B2 (en) 2019-04-25 2021-06-08 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor memory device having contact element of rectangular shape
US11038058B2 (en) 2019-04-26 2021-06-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
US11239339B2 (en) 2019-04-29 2022-02-01 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structure and method
US11094695B2 (en) * 2019-05-17 2021-08-17 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit device and method of forming the same
US11088255B2 (en) 2019-05-17 2021-08-10 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices
US11069784B2 (en) * 2019-05-17 2021-07-20 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacture
US11088034B2 (en) 2019-05-22 2021-08-10 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structures for semiconductor devices
US11183574B2 (en) 2019-05-24 2021-11-23 Taiwan Semiconductor Manufacturing Co., Ltd. Work function layers for transistor gate electrodes
US10707325B1 (en) 2019-05-29 2020-07-07 International Business Machines Corporation Fin field effect transistor devices with robust gate isolation
US10818768B1 (en) 2019-05-30 2020-10-27 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming metal cap layers to improve performance of semiconductor structure
CN112018036A (zh) 2019-05-30 2020-12-01 台湾积体电路制造股份有限公司 半导体装置结构的制造方法
US11183580B2 (en) 2019-05-30 2021-11-23 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with metal gate stack
US10879379B2 (en) 2019-05-30 2020-12-29 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-gate device and related methods
US10755964B1 (en) 2019-05-31 2020-08-25 Taiwan Semiconductor Manufacturing Co., Ltd. Source/drain isolation structure and methods thereof
US11069578B2 (en) 2019-05-31 2021-07-20 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing a semiconductor device
US11342229B2 (en) 2019-06-13 2022-05-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming a semiconductor device structure having an electrical connection structure
US10868174B1 (en) 2019-06-14 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Devices with strained isolation features
US11004725B2 (en) 2019-06-14 2021-05-11 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming a FinFET device with gaps in the source/drain region
US11107923B2 (en) 2019-06-14 2021-08-31 Taiwan Semiconductor Manufacturing Company, Ltd. Source/drain regions of FinFET devices and methods of forming same
US11043595B2 (en) 2019-06-14 2021-06-22 Taiwan Semiconductor Manufacturing Co., Ltd. Cut metal gate in memory macro edge and middle strap
US11056573B2 (en) 2019-06-14 2021-07-06 Taiwan Semiconductor Manufacturing Company, Ltd. Implantation and annealing for semiconductor device
US10971402B2 (en) 2019-06-17 2021-04-06 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device including interface layer and method of fabricating thereof
US11682665B2 (en) 2019-06-19 2023-06-20 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor layout with different row heights
US11264284B2 (en) 2019-06-20 2022-03-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of fabricating the same
US10872821B1 (en) 2019-06-24 2020-12-22 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and manufacturing method thereof
US11245071B2 (en) 2019-06-25 2022-02-08 Taiwan Semiconductor Manufacturing Company, Ltd. Memory cell, method of forming the same, and semiconductor device having the same
US11244871B2 (en) 2019-06-27 2022-02-08 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of fabricating semiconductor devices for tightening spacing between nanosheets in GAA structures and structures formed thereby
US11373870B2 (en) 2019-06-27 2022-06-28 Taiwan Semiconductor Manufacturing Co., Ltd. Method for manufacturing semiconductor device including performing thermal treatment on germanium layer
US10879469B1 (en) 2019-06-28 2020-12-29 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a field effect transistor using nanotube structures and a field effect transistor
US11515197B2 (en) 2019-07-11 2022-11-29 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and method of forming the semiconductor device
US11152486B2 (en) 2019-07-15 2021-10-19 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET semiconductor device having source/drain contact(s) separated by airgap spacer(s) from the gate stack(s) to reduce parasitic capacitance
US11133223B2 (en) 2019-07-16 2021-09-28 Taiwan Semiconductor Manufacturing Co., Ltd. Selective epitaxy
US11049774B2 (en) 2019-07-18 2021-06-29 Taiwan Semiconductor Manufacturing Company, Ltd. Hybrid source drain regions formed based on same Fin and methods forming same
US11476166B2 (en) 2019-07-30 2022-10-18 Taiwan Semiconductor Manufacturing Co., Ltd. Nano-sheet-based complementary metal-oxide-semiconductor devices with asymmetric inner spacers
US11411112B2 (en) 2019-07-31 2022-08-09 Taiwan Semiconductor Manufacturing Company, Ltd. Gate structure, method of forming the same, and semiconductor device having the same
US11348839B2 (en) 2019-07-31 2022-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing semiconductor devices with multiple silicide regions
US11532550B2 (en) 2019-07-31 2022-12-20 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure having a multi-layer conductive feature and method making the same
US11342225B2 (en) 2019-07-31 2022-05-24 Taiwan Semiconductor Manufacturing Company, Ltd. Barrier-free approach for forming contact plugs
US11145660B2 (en) 2019-07-31 2021-10-12 Taiwan Semiconductor Manufacturing Co., Ltd. Dual-port SRAM cell structure
US11335817B2 (en) 2019-08-15 2022-05-17 Taiwan Semiconductor Manufacturing Co., Ltd. Composite etch stop layers for sensor devices
US10985266B2 (en) 2019-08-20 2021-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Method of gap filling for semiconductor device
US11152488B2 (en) 2019-08-21 2021-10-19 Taiwan Semiconductor Manufacturing Co., Ltd. Gate-all-around structure with dummy pattern top in channel region and methods of forming the same
US11094788B2 (en) 2019-08-21 2021-08-17 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US11245029B2 (en) 2019-08-22 2022-02-08 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with metal gate stack
US11069811B2 (en) 2019-08-22 2021-07-20 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
US11127639B2 (en) 2019-08-22 2021-09-21 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with fin structures
US10985265B2 (en) 2019-08-22 2021-04-20 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming semiconductor device structure
US11456368B2 (en) 2019-08-22 2022-09-27 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure with hard mask layer over fin structure and method for forming the same
US20210057273A1 (en) 2019-08-22 2021-02-25 Taiwan Semiconductor Manufacturing Co., Ltd. Barrier-Less Structures
US11114345B2 (en) 2019-08-22 2021-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. IC including standard cells and SRAM cells
US11189531B2 (en) 2019-08-23 2021-11-30 Taiwan Semiconductor Manufacturing Company, Ltd. Fin field-effect transistor device and method
US11189727B2 (en) 2019-08-23 2021-11-30 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET contacts and method forming same
US11101180B2 (en) 2019-08-23 2021-08-24 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacture
US11011372B2 (en) 2019-08-23 2021-05-18 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods of manufacture
US11133416B2 (en) 2019-08-23 2021-09-28 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming semiconductor devices having plural epitaxial layers
US10978344B2 (en) 2019-08-23 2021-04-13 Taiwan Semiconductor Manufacturing Company, Ltd. Melting laser anneal of epitaxy regions
US11515199B2 (en) 2019-08-26 2022-11-29 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structures including standard cells and tap cells
US11133386B2 (en) 2019-08-27 2021-09-28 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-layer fin structure
US11710667B2 (en) 2019-08-27 2023-07-25 Taiwan Semiconductor Manufacturing Co., Ltd. Gate-all-around device with trimmed channel and dipoled dielectric layer and methods of forming the same
US11315925B2 (en) 2019-08-28 2022-04-26 Taiwan Semiconductor Manufacturing Co., Ltd. Uniform gate width for nanostructure devices
US11315936B2 (en) 2019-08-29 2022-04-26 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device and manufacturing method thereof
US11195934B2 (en) 2019-08-29 2021-12-07 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and method for bi-layer self-aligned contact
US11456383B2 (en) 2019-08-30 2022-09-27 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having a contact plug with an air gap spacer
US11462614B2 (en) 2019-08-30 2022-10-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods of manufacturing
US11158721B2 (en) 2019-08-30 2021-10-26 Taiwan Semiconductor Manufacturing Co., Ltd. Metal oxide interlayer structure for nFET and pFET
US11355363B2 (en) 2019-08-30 2022-06-07 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods of manufacturing
US11489063B2 (en) 2019-08-30 2022-11-01 Taiwan Semiconductor Manufacturing Co., Ltd Method of manufacturing a source/drain feature in a multi-gate semiconductor structure
DE102020114875B4 (de) 2019-08-30 2024-02-22 Taiwan Semiconductor Manufacturing Co., Ltd. Finfet-vorrichtung und verfahren
US11282942B2 (en) 2019-08-30 2022-03-22 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure with uniform threshold voltage distribution and method of forming the same
US11239368B2 (en) 2019-08-30 2022-02-01 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US11367782B2 (en) 2019-08-30 2022-06-21 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor manufacturing
US11201243B2 (en) 2019-09-03 2021-12-14 Taiwan Semiconductor Manufacturing Co., Ltd. Nanowire stack GAA device and methods for producing the same
US11545573B2 (en) 2019-09-10 2023-01-03 Taiwan Semiconductor Manufacturing Co., Ltd. Hybrid nanostructure and fin structure device
US11282920B2 (en) 2019-09-16 2022-03-22 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with air gap on gate structure and method for forming the same
US11302818B2 (en) 2019-09-16 2022-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Gate resistance reduction through low-resistivity conductive layer
US11227828B2 (en) 2019-09-16 2022-01-18 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
US11430891B2 (en) 2019-09-16 2022-08-30 Taiwan Semiconductor Manufacturing Co., Ltd. Gate all around structure with additional silicon layer and method for forming the same
US10937652B1 (en) 2019-09-16 2021-03-02 Taiwan Semiconductor Manufacturing Co., Ltd. Method and structure of cut end with self-aligned double patterning
US11107836B2 (en) 2019-09-16 2021-08-31 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
US11227950B2 (en) 2019-09-16 2022-01-18 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of forming air spacers in semiconductor devices
US10867863B1 (en) 2019-09-16 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
US10937884B1 (en) 2019-09-16 2021-03-02 Taiwan Semiconductor Manufacturing Co., Ltd. Gate spacer with air gap for semiconductor device structure and method for forming the same
US11239114B2 (en) 2019-09-16 2022-02-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with reduced contact resistance and methods of forming the same
US11088249B2 (en) 2019-09-17 2021-08-10 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with implant and method of manufacturing same
US11114547B2 (en) 2019-09-17 2021-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Field effect transistor with negative capacitance dieletric structures
US11342231B2 (en) 2019-09-17 2022-05-24 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit device with low threshold voltage
US11315785B2 (en) 2019-09-17 2022-04-26 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial blocking layer for multi-gate devices and fabrication methods thereof
US11094821B2 (en) 2019-09-17 2021-08-17 Taiwan Semiconductor Manufacturing Co., Ltd. Transistor structure and method with strain effect
US11362212B2 (en) 2019-09-17 2022-06-14 Taiwan Semiconductor Manufacturing Company, Ltd. Contact interface engineering for reducing contact resistance
US11335592B2 (en) 2019-09-17 2022-05-17 Taiwan Semiconductor Manufacturing Co., Ltd. Contact resistance between via and conductive line
US11469139B2 (en) 2019-09-20 2022-10-11 Taiwan Semiconductor Manufacturing Company, Ltd. Bottom-up formation of contact plugs
US11646311B2 (en) 2019-09-23 2023-05-09 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of fabricating the same
US11164868B2 (en) 2019-09-24 2021-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device
US11145765B2 (en) 2019-09-26 2021-10-12 Taiwan Semiconductor Manufacturing Co., Ltd. Gate-all-around structure with self substrate isolation and methods of forming the same
US11621224B2 (en) 2019-09-26 2023-04-04 Taiwan Semiconductor Manufacturing Co. Ltd. Contact features and methods of fabricating the same in semiconductor devices
US11670551B2 (en) 2019-09-26 2023-06-06 Taiwan Semiconductor Manufacturing Co., Ltd. Interface trap charge density reduction
US11322409B2 (en) 2019-09-26 2022-05-03 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-gate devices and method of fabricating the same
US11342222B2 (en) 2019-09-26 2022-05-24 Taiwan Semiconductor Manufacturing Co., Ltd. Self-aligned scheme for semiconductor device and method of forming the same
US11282935B2 (en) 2019-09-26 2022-03-22 Taiwan Semiconductor Manufacturing Co., Ltd. Gate-all-around device with protective dielectric layer and method of forming the same
US11508624B2 (en) 2019-09-26 2022-11-22 Taiwan Semiconductor Manufacturing Co., Ltd. Gate-all-around device with different channel semiconductor materials and method of forming the same
US11482610B2 (en) 2019-09-26 2022-10-25 Taiwan Semiconductor Manufacturing Co. Method of forming a gate structure
US11282748B2 (en) 2019-09-26 2022-03-22 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of forming the same
US11387146B2 (en) 2019-09-26 2022-07-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with air gaps between metal gates and method of forming the same
US11239121B2 (en) 2019-09-26 2022-02-01 Taiwan Semiconductor Manufacturing Co., Ltd. Metal gate contacts and methods of forming the same
US11581226B2 (en) 2019-09-27 2023-02-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with tunable epitaxy structures and method of forming the same
US11222948B2 (en) 2019-09-27 2022-01-11 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method of fabricating the semiconductor structure
US11587927B2 (en) 2019-09-27 2023-02-21 Taiwan Semiconductor Manufacturing Co., Ltd. Crown bulk for FinFET device
US11121037B2 (en) 2019-09-27 2021-09-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
US11211116B2 (en) 2019-09-27 2021-12-28 Taiwan Semiconductor Manufacturing Co., Ltd. Embedded SRAM write assist circuit
US11443980B2 (en) 2019-09-27 2022-09-13 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating semiconductor device with metal pad extending into top metal layer
US11328990B2 (en) 2019-09-27 2022-05-10 Taiwan Semiconductor Manufacturing Co., Ltd. Via structure having a metal hump for low interface resistance
CN112582347A (zh) 2019-09-27 2021-03-30 台湾积体电路制造股份有限公司 半导体装置的形成方法
US11271083B2 (en) 2019-09-27 2022-03-08 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device, FinFET device and methods of forming the same
US11728405B2 (en) 2019-09-28 2023-08-15 Taiwan Semiconductor Manufacturing Co., Ltd. Stress-inducing silicon liner in semiconductor devices
US11296084B2 (en) 2019-09-29 2022-04-05 Taiwan Semiconductor Manufacturing Company, Ltd. Deposition method, semiconductor device and method of fabricating the same
US11031292B2 (en) 2019-09-29 2021-06-08 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-gate device and related methods
US11094796B2 (en) 2019-09-30 2021-08-17 Taiwan Semiconductor Manufacturing Co., Ltd. Transistor spacer structures
US11417653B2 (en) 2019-09-30 2022-08-16 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method for forming the same
US11289417B2 (en) 2019-09-30 2022-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and methods of forming the same
US20210098369A1 (en) 2019-09-30 2021-04-01 Taiwan Semiconductor Manufacturing Co., Ltd. Via Rail Structure
US11374104B2 (en) 2019-09-30 2022-06-28 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of reducing capacitance in field-effect transistors
US11264393B2 (en) 2019-09-30 2022-03-01 Taiwan Semiconductor Manufacturing Co., Ltd. Source/drain contact having a protruding segment
US11088251B2 (en) 2019-10-01 2021-08-10 Taiwan Semiconductor Manufacturing Company, Ltd. Source/drain contacts for semiconductor devices and methods of forming
US11158539B2 (en) 2019-10-01 2021-10-26 Taiwan Semiconductor Manufacturing Co., Ltd. Method and structure for barrier-less plug
US11127832B2 (en) 2019-10-01 2021-09-21 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and method for forming the same
US10937704B1 (en) 2019-10-01 2021-03-02 Taiwan Semiconductor Manufacturing Co., Ltd. Mixed workfunction metal for nanosheet device
US11296227B2 (en) 2019-10-16 2022-04-05 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing semiconductor devices and semiconductor devices
US11189708B2 (en) 2019-10-17 2021-11-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure with gate stack and method for forming the same
US11037925B2 (en) 2019-10-18 2021-06-15 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and method of integrated circuit having decouple capacitance
US11201229B2 (en) 2019-10-18 2021-12-14 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with metal gate stack
US11335774B2 (en) 2019-10-18 2022-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Contact structure for semiconductor device and method
US11145650B2 (en) 2019-10-18 2021-10-12 Taiwan Semiconductor Manufacturing Co., Ltd. Gate cut dielectric feature and method of forming the same
US11018257B2 (en) 2019-10-18 2021-05-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure having a plurality of threshold voltages and method of forming the same
US11522085B2 (en) 2019-10-18 2022-12-06 Taiwan Semiconductor Manufacturing Company, Ltd. Ferroelectric semiconductor device and method
US11502197B2 (en) 2019-10-18 2022-11-15 Taiwan Semiconductor Manufacturing Co., Ltd. Source and drain epitaxial layers
US11233130B2 (en) 2019-10-25 2022-01-25 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of forming the same
US11251305B2 (en) 2019-10-25 2022-02-15 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor device structure and method for forming the same
US11322495B2 (en) 2019-10-28 2022-05-03 Taiwan Semiconductor Manufacturing Company, Ltd. Complementary metal-oxide-semiconductor device and method of manufacturing the same
US11251284B2 (en) 2019-10-29 2022-02-15 Taiwan Semiconductor Manufacturing Company, Ltd. Dummy gate cutting process and resulting gate structures
US10977409B1 (en) 2019-10-29 2021-04-13 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method of generating a layout for a semiconductor device
US11450754B2 (en) 2019-10-29 2022-09-20 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods of manufacture
US11264270B2 (en) 2019-10-29 2022-03-01 Taiwan Semiconductor Manufacturing Co., Ltd. Air-replaced spacer for self-aligned contact scheme
US11658245B2 (en) 2019-10-29 2023-05-23 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of manufacturing
US11296199B2 (en) 2019-10-29 2022-04-05 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods
US11515212B2 (en) 2019-10-30 2022-11-29 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing semiconductor devices having controlled S/D epitaxial shape
US11264327B2 (en) 2019-10-30 2022-03-01 Taiwan Semiconductor Manufacturing Co., Ltd. Backside power rail structure and methods of forming same
US11621195B2 (en) 2019-10-30 2023-04-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacturing the same
US11322619B2 (en) 2019-10-30 2022-05-03 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
US11145728B2 (en) 2019-10-30 2021-10-12 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of forming same
US11417748B2 (en) 2019-10-30 2022-08-16 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of fabricating a semiconductor device
US11355605B2 (en) 2019-10-30 2022-06-07 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and method for forming the same
US11374090B2 (en) 2019-10-31 2022-06-28 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structures for semiconductor devices
US11488857B2 (en) 2019-10-31 2022-11-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of manufacture using a contact etch stop layer (CESL) breakthrough process
US11631770B2 (en) 2019-10-31 2023-04-18 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with stressor
US11424242B2 (en) 2019-10-31 2022-08-23 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with isolation structure
DE102020110169A1 (de) 2019-10-31 2021-05-06 Taiwan Semiconductor Manufacturing Co., Ltd. Struktur und bildungsverfahren einer halbleitervorrichtung mitstressor
US11201225B2 (en) 2019-10-31 2021-12-14 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with stressor
US12525486B2 (en) 2019-10-31 2026-01-13 Taiwan Semiconductor Manufacturing Co., Ltd. Isolation structure for metal interconnect
CN112750761A (zh) 2019-10-31 2021-05-04 台湾积体电路制造股份有限公司 半导体装置及其制造方法
DE102020110789B4 (de) 2019-10-31 2024-10-31 Taiwan Semiconductor Manufacturing Co. Ltd. Gate-strukturen für halbleitervorrichtungen und verfahren zum herstellen einer halbleitervorrichtung
DE102020114813A1 (de) 2019-10-31 2021-05-06 Taiwan Semiconductor Manufacturing Co., Ltd. Struktur und bildungsverfahren für halbleitervorrichtung mit isolierungsstruktur
US11756997B2 (en) 2019-10-31 2023-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method for forming the same
US10964792B1 (en) 2019-11-22 2021-03-30 Taiwan Semiconductor Manufacturing Co., Ltd. Dual metal capped via contact structures for semiconductor devices
US11081401B2 (en) 2019-11-29 2021-08-03 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method for manufacturing the same
US11545490B2 (en) 2019-12-17 2023-01-03 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and method for forming the same
US11133221B2 (en) 2019-12-17 2021-09-28 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming semiconductor device structure with gate electrode layer
US11380781B2 (en) 2019-12-17 2022-07-05 Taiwan Semiconductor Manufacturing Co., Ltd. Contact and via structures for semiconductor devices
US11227794B2 (en) 2019-12-19 2022-01-18 Taiwan Semiconductor Manufacturing Co., Ltd. Method for making self-aligned barrier for metal vias In-Situ during a metal halide pre-clean and associated interconnect structure
US11233134B2 (en) 2019-12-19 2022-01-25 Taiwan Semiconductor Manufacturing Co., Ltd. Field effect transistors with dual silicide contact structures
CN113013100B (zh) 2019-12-20 2025-12-05 台湾积体电路制造股份有限公司 用于形成半导体器件的方法
US11502166B2 (en) 2019-12-20 2022-11-15 Taiwan Semiconductor Manufacturing Co., Ltd. Seal material for air gaps in semiconductor devices
US11296187B2 (en) 2019-12-20 2022-04-05 Taiwan Semiconductor Manufacturing Co., Ltd. Seal material for air gaps in semiconductor devices
US11901220B2 (en) 2019-12-20 2024-02-13 Taiwan Semiconductor Manufacturing Co., Ltd. Bilayer seal material for air gaps in semiconductor devices
US11728223B2 (en) 2019-12-20 2023-08-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and methods of manufacture
US11075195B2 (en) 2019-12-26 2021-07-27 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated hybrid standard cell structure with gate-all-around device
US11444200B2 (en) 2019-12-26 2022-09-13 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure with isolating feature and method for forming the same
DE102020129004A1 (de) 2019-12-26 2021-07-01 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleiterstruktur mit isolierendem element und verfahren zum bilden derselben
US11276571B2 (en) 2019-12-26 2022-03-15 Taiwan Semiconductor Manufacturing Co., Ltd. Method of breaking through etch stop layer
US11664420B2 (en) 2019-12-26 2023-05-30 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US11488859B2 (en) 2019-12-27 2022-11-01 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US11362096B2 (en) 2019-12-27 2022-06-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
DE102020110792B4 (de) 2019-12-27 2022-08-25 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleitervorrichtungsstruktur mit Finnenstruktur und mehreren Nanostrukturen und Verfahren zum Bilden derselben
US11282944B2 (en) 2019-12-30 2022-03-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US11380548B2 (en) 2019-12-30 2022-07-05 Taiwan Semiconductor Manufacturing Company Ltd. Method of manufacturing semiconductor structure through multi-implantation to fin structures
US11508623B2 (en) 2019-12-31 2022-11-22 Taiwan Semiconductor Manufacturing Co., Ltd. Local gate height tuning by CMP and dummy gate design
US11393925B2 (en) 2019-12-31 2022-07-19 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure with nanostructure
DE102020120432B4 (de) 2019-12-31 2024-10-02 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleitervorrichtungsstruktur und deren Herstellungsverfahren
US11107886B2 (en) 2020-01-10 2021-08-31 Taiwan Semiconductor Manufacturing Company Ltd. Memory device and method of fabricating the memory device
US11233156B2 (en) 2020-01-15 2022-01-25 Taiwan Semiconductor Manufacturing Co., Ltd. Memory device and manufacturing method thereof
US11855619B2 (en) 2020-01-15 2023-12-26 Taiwan Semiconductor Manufacturing Company Ltd. Power switch circuit, IC structure of power switch circuit, and method of forming IC structure
US11495491B2 (en) 2020-01-16 2022-11-08 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with stacked conductive structures
US11302692B2 (en) 2020-01-16 2022-04-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices having gate dielectric layers of varying thicknesses and methods of forming the same
US11476365B2 (en) 2020-01-16 2022-10-18 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor device structure and method for forming the same
US11139379B2 (en) 2020-01-16 2021-10-05 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and method for forming the same
US11244899B2 (en) 2020-01-17 2022-02-08 Taiwan Semiconductor Manufacturing Co., Ltd. Butted contacts and methods of fabricating the same in semiconductor devices
US11309419B2 (en) 2020-01-17 2022-04-19 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US11355615B2 (en) 2020-01-17 2022-06-07 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET having fluorine-doped gate sidewall spacers
US11302577B2 (en) 2020-01-17 2022-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Self aligned contact scheme
US11444202B2 (en) 2020-01-17 2022-09-13 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of forming the same
US11302784B2 (en) 2020-01-17 2022-04-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having contact feature and method of fabricating the same
US11183584B2 (en) 2020-01-17 2021-11-23 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US11322603B2 (en) 2020-01-21 2022-05-03 Taiwan Semiconductor Manufacturing Co., Ltd. Anti-punch-through doping on source/drain region
US11393910B2 (en) 2020-01-21 2022-07-19 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and formation method thereof
US11201106B2 (en) 2020-01-24 2021-12-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with conductors embedded in a substrate
US11251268B2 (en) 2020-01-28 2022-02-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with doped structure
DE102020119831B4 (de) 2020-01-29 2024-11-14 Taiwan Semiconductor Manufacturing Co., Ltd. Verfahren und Struktur
DE102020120099B4 (de) 2020-01-29 2024-07-25 Taiwan Semiconductor Manufacturing Co. Ltd. Verfahren zur herstellung von isolationsstrukturen für halbleitervorrichtungen
US11521969B2 (en) 2020-01-29 2022-12-06 Taiwan Semiconductor Manufacturing Co., Ltd. Isolation structures for semiconductor devices
US11417764B2 (en) 2020-01-29 2022-08-16 Taiwan Semiconductor Manufacturing Co., Ltd. Interface profile control in epitaxial structures for semiconductor devices
US11264273B2 (en) 2020-01-29 2022-03-01 Taiwan Semiconductor Manufacturing Co., Ltd. Electron migration control in interconnect structures
US11929327B2 (en) 2020-01-29 2024-03-12 Taiwan Semiconductor Manufacturing Co., Inc. Liner-free conductive structures with anchor points
US11245028B2 (en) 2020-01-30 2022-02-08 Taiwan Semiconductor Manufacturing Co., Ltd. Isolation structures of semiconductor devices
US11444177B2 (en) 2020-01-30 2022-09-13 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US11563110B2 (en) 2020-01-30 2023-01-24 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method for forming the same
DE102020119963A1 (de) 2020-01-30 2021-08-05 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleitervorrichtung und verfahren
DE102020132562B4 (de) 2020-01-30 2024-02-22 Taiwan Semiconductor Manufacturing Co., Ltd. Verfahren zur herstellung einer halbleitervorrichtung und halbleitervorrichtung
US11522050B2 (en) 2020-01-30 2022-12-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US11217586B2 (en) 2020-01-31 2022-01-04 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having dummy fin physically separating the first and second gate stacks
DE102020114860A1 (de) 2020-01-31 2021-08-05 Taiwan Semiconductor Manufacturing Co., Ltd. Transistor-gates und verfahren zum bilden davon
US11610822B2 (en) 2020-01-31 2023-03-21 Taiwan Semiconductor Manufacturing Co., Ltd. Structures for tuning threshold voltage
US11437287B2 (en) 2020-01-31 2022-09-06 Taiwan Semiconductor Manufacturing Co., Ltd. Transistor gates and methods of forming thereof
DE102020119609A1 (de) 2020-01-31 2021-08-05 Taiwan Semiconductor Manufacturing Co., Ltd. Neue gatestrukturen zur einstellung der grenzspannung
US11444197B2 (en) 2020-02-07 2022-09-13 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US11094702B1 (en) 2020-02-10 2021-08-17 Taiwan Semiconductor Manufacturing Co., Ltd. One-time programmable memory device including anti-fuse element and manufacturing method thereof
US11177383B2 (en) 2020-02-10 2021-11-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
US11335776B2 (en) 2020-02-11 2022-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Hybrid channel semiconductor device and method
US11264287B2 (en) 2020-02-11 2022-03-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with cut metal gate and method of manufacture
US11177180B2 (en) * 2020-02-11 2021-11-16 Taiwan Semiconductor Manufacturing Co., Ltd. Profile control of a gap fill structure
US11705372B2 (en) 2020-02-11 2023-07-18 Taiwan Semiconductor Manufacturing Co., Ltd. Fin loss prevention
US11158741B2 (en) 2020-02-11 2021-10-26 Taiwan Semiconductor Manufacturing Company, Ltd. Nanostructure device and method
US11189706B2 (en) 2020-02-11 2021-11-30 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET structure with airgap and method of forming the same
US11830948B2 (en) 2020-02-19 2023-11-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
US11862712B2 (en) 2020-02-19 2024-01-02 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of semiconductor device fabrication including growing epitaxial features using different carrier gases
US11664279B2 (en) 2020-02-19 2023-05-30 Taiwan Semiconductor Manufacturing Co., Ltd. Multiple threshold voltage implementation through lanthanum incorporation
US11854688B2 (en) 2020-02-19 2023-12-26 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US12136651B2 (en) 2020-02-19 2024-11-05 Taiwan Semiconductor Manufacturing Co., Ltd. Silicon-germanium Fins and methods of processing the same in field-effect transistors
US11257950B2 (en) 2020-02-24 2022-02-22 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and manufacturing method for the semiconductor structure
US11211472B2 (en) 2020-02-24 2021-12-28 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of forming the same
US11201085B2 (en) 2020-02-25 2021-12-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure having air gap and method for forming the same
US11133230B2 (en) 2020-02-26 2021-09-28 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with dual isolation liner and method of forming the same
US11373947B2 (en) 2020-02-26 2022-06-28 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming interconnect structures of semiconductor device
US11715781B2 (en) 2020-02-26 2023-08-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices with improved capacitors
US11329165B2 (en) 2020-02-26 2022-05-10 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with isolation structure
US11211256B2 (en) 2020-02-26 2021-12-28 Taiwan Semiconductor Manufacturing Co., Ltd Method with CMP for metal ion prevention
CN113314418B (zh) 2020-02-27 2024-03-08 台湾积体电路制造股份有限公司 制造半导体器件的方法和半导体器件
TW202139270A (zh) 2020-02-27 2021-10-16 台灣積體電路製造股份有限公司 半導體裝置的形成方法
US11404570B2 (en) 2020-02-27 2022-08-02 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices with embedded ferroelectric field effect transistors
CN113130483A (zh) 2020-02-27 2021-07-16 台湾积体电路制造股份有限公司 半导体结构
US11264502B2 (en) 2020-02-27 2022-03-01 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US11515211B2 (en) 2020-02-27 2022-11-29 Taiwan Semiconductor Manufacturing Co., Ltd. Cut EPI process and structures
US11515216B2 (en) 2020-02-27 2022-11-29 Taiwan Semiconductor Manufacturing Co., Ltd. Dual silicide structure and methods thereof
US11374128B2 (en) 2020-02-27 2022-06-28 Taiwan Semiconductor Manufacturing Co., Ltd. Method and structure for air gap inner spacer in gate-all-around devices
CN113113359A (zh) 2020-02-27 2021-07-13 台湾积体电路制造股份有限公司 半导体装置的制造方法
US11393898B2 (en) 2020-02-27 2022-07-19 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US11799019B2 (en) 2020-02-27 2023-10-24 Taiwan Semiconductor Manufacturing Co., Ltd. Gate isolation feature and manufacturing method thereof
TW202145443A (zh) 2020-02-27 2021-12-01 台灣積體電路製造股份有限公司 半導體裝置的形成方法
CN113113311A (zh) 2020-02-27 2021-07-13 台湾积体电路制造股份有限公司 半导体装置的形成方法
US11152475B2 (en) 2020-02-27 2021-10-19 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming source/drain contacts utilizing an inhibitor
US11769820B2 (en) 2020-02-27 2023-09-26 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of manufacturing a FinFET by forming a hollow area in the epitaxial source/drain region
CN113113405A (zh) 2020-02-27 2021-07-13 台湾积体电路制造股份有限公司 半导体装置
DE102020115553A1 (de) 2020-02-27 2021-09-02 Taiwan Semiconductor Manufacturing Co., Ltd. Cut-epi-verfahren und strukturen
US11328963B2 (en) 2020-02-27 2022-05-10 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-gate device and related methods
US11495682B2 (en) 2020-02-27 2022-11-08 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US11316046B2 (en) 2020-02-27 2022-04-26 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US11545432B2 (en) 2020-02-27 2023-01-03 Taiwan Semiconductor Manufacturing Co., Ltd Semiconductor device with source and drain vias having different sizes
US11233119B2 (en) 2020-03-02 2022-01-25 Taiwan Semiconductor Manufacturing Co., Ltd. Core-shell nanostructures for semiconductor devices
US11695055B2 (en) 2020-03-03 2023-07-04 Taiwan Semiconductor Manufacturing Co., Ltd. Passivation layers for semiconductor devices
US11233149B2 (en) 2020-03-03 2022-01-25 Taiwan Semiconductor Manufacturing Co., . Ltd. Spacer structures for semiconductor devices
US11677013B2 (en) 2020-03-30 2023-06-13 Taiwan Semiconductor Manufacturing Co., Ltd. Source/drain epitaxial layers for transistors
DE102020128844A1 (de) 2020-03-30 2021-09-30 Taiwan Semiconductor Manufacturing Co. Ltd. Source/drain-epitaxieschichten für transistoren
DE102021104484B4 (de) 2020-03-30 2025-03-27 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleiterschaltungsstruktur mit miteinander integrierten, verschiedenen Funktionsblöcken
US11563001B2 (en) 2020-03-30 2023-01-24 Taiwan Semiconductor Manufacturing Co., Ltd. Air spacer and capping structures in semiconductor devices
US11588038B2 (en) 2020-03-30 2023-02-21 Taiwan Semiconductor Manufacturing Co., Ltd. Circuit structure with gate configuration
DE102020123264B4 (de) 2020-03-30 2022-11-10 Taiwan Semiconductor Manufacturing Co. Ltd. Halbleitervorrichtung und Verfahren zu dessen Herstellung
US11374105B2 (en) 2020-03-31 2022-06-28 Taiwan Semiconductor Manufacturing Co., Ltd. Nanosheet device with dipole dielectric layer and methods of forming the same
US12022643B2 (en) 2020-03-31 2024-06-25 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-layer high-k gate dielectric structure
US11107736B1 (en) 2020-03-31 2021-08-31 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structures for semiconductor devices
DE102020126060B4 (de) 2020-03-31 2025-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Mehrschichtige high-k-gatedielektrikumstruktur und verfahren
US11508572B2 (en) 2020-04-01 2022-11-22 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US11450602B2 (en) 2020-04-01 2022-09-20 Taiwan Semiconductor Manufacturing Co., Ltd. Hybrid method for forming semiconductor interconnect structure
US11417751B2 (en) 2020-04-01 2022-08-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
US11158632B1 (en) 2020-04-01 2021-10-26 Taiwan Semiconductor Manufacturing Co., Ltd Fin-based strap cell structure for improving memory performance
US11271096B2 (en) 2020-04-01 2022-03-08 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming fin field effect transistor device structure
US11257911B2 (en) 2020-04-01 2022-02-22 Taiwan Semiconductor Manufacturing Company, Ltd. Sacrificial layer for semiconductor process
US11387365B2 (en) 2020-04-01 2022-07-12 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device for recessed fin structure having rounded corners
US11309398B2 (en) 2020-04-01 2022-04-19 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and manufacturing method for the semiconductor device
US11302796B2 (en) 2020-04-01 2022-04-12 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming self-aligned source/drain metal contacts
US11189697B2 (en) 2020-04-01 2021-11-30 Taiwan Semiconductor Manufacturing Co., Ltd. Ultra-thin fin structure and method of fabricating the same
US11251073B2 (en) 2020-04-01 2022-02-15 Taiwan Semiconductor Manufacturing Co. Selective deposition of barrier layer
US11139432B1 (en) 2020-04-01 2021-10-05 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming a FinFET device
US11296202B2 (en) 2020-04-01 2022-04-05 Taiwan Semiconductor Manufacturing Co., Ltd. Memory chip structure having GAA transistors with different threshold voltages and work functions for improving performances in multiple applications
US11443979B2 (en) 2020-04-01 2022-09-13 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device
US11495661B2 (en) 2020-04-07 2022-11-08 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device including gate barrier layer
US11489053B2 (en) 2020-04-09 2022-11-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
CN113053878B (zh) 2020-04-09 2025-05-06 台湾积体电路制造股份有限公司 半导体器件及其制造方法
US11177212B2 (en) 2020-04-13 2021-11-16 Taiwan Semiconductor Manufacturing Co., Ltd. Contact formation method and related structure
US11309424B2 (en) 2020-04-13 2022-04-19 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US11335638B2 (en) 2020-04-15 2022-05-17 Taiwan Semiconductor Manufacturing Co., Ltd. Reducing RC delay in semiconductor devices
US11164789B1 (en) 2020-04-17 2021-11-02 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming semiconductor device that includes covering metal gate with multilayer dielectric
US11342501B2 (en) 2020-04-17 2022-05-24 Taiwan Semiconductor Manufacturing Company, Ltd. Memory cell, method of forming the same, and semiconductor device having the same
US11335552B2 (en) 2020-04-17 2022-05-17 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with oxide semiconductor channel
DE102020121223A1 (de) 2020-04-24 2021-10-28 Taiwan Semiconductor Manufacturing Co., Ltd. Selektive Auskleidung auf Rückseitendurchkontaktierung und deren Verfahren
US11121138B1 (en) 2020-04-24 2021-09-14 Taiwan Semiconductor Manufacturing Co., Ltd. Low resistance pickup cells for SRAM
US11342413B2 (en) 2020-04-24 2022-05-24 Taiwan Semiconductor Manufacturing Co., Ltd. Selective liner on backside via and method thereof
US11450660B2 (en) 2020-04-27 2022-09-20 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of fabricating the same
US11251308B2 (en) 2020-04-28 2022-02-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
CN113161321B (zh) 2020-04-28 2024-10-15 台湾积体电路制造股份有限公司 半导体结构和形成半导体结构的方法
CN113140565B (zh) 2020-04-28 2025-01-14 台湾积体电路制造股份有限公司 半导体器件和制造方法
US11521929B2 (en) 2020-04-28 2022-12-06 Taiwan Semiconductor Manufacturing Co., Ltd. Capping layer for liner-free conductive structures
US11955370B2 (en) 2020-04-28 2024-04-09 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices and methods of manufacture
US11342326B2 (en) 2020-04-28 2022-05-24 Taiwan Semiconductor Manufacturing Co., Ltd. Self-aligned etch in semiconductor devices
US11355410B2 (en) 2020-04-28 2022-06-07 Taiwan Semiconductor Manufacturing Co., Ltd. Thermal dissipation in semiconductor devices
TWI741935B (zh) 2020-04-28 2021-10-01 台灣積體電路製造股份有限公司 半導體元件與其製作方法
US11410930B2 (en) 2020-04-28 2022-08-09 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US11349004B2 (en) 2020-04-28 2022-05-31 Taiwan Semiconductor Manufacturing Co., Ltd. Backside vias in semiconductor device
DE102020119859A1 (de) 2020-04-29 2021-11-04 Taiwan Semiconductor Manufacturing Co., Ltd. Bildung von hybrid-isolationsregionen durch aussparen und erneutes abscheiden
US12538558B2 (en) 2020-04-29 2026-01-27 Taiwan Semiconductor Manufacturing Company, Ltd. Source/drain epitaxial structures for high voltage transistors
US11404323B2 (en) * 2020-04-29 2022-08-02 Taiwan Semiconductor Manufacturing Co., Ltd. Formation of hybrid isolation regions through recess and re-deposition
US11398385B2 (en) 2020-05-08 2022-07-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US11239208B2 (en) 2020-05-12 2022-02-01 Taiwan Semiconductor Manufacturing Co., Ltd. Packaged semiconductor devices including backside power rails and methods of forming the same
US11450600B2 (en) 2020-05-12 2022-09-20 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices including decoupling capacitors
DE102020122823B4 (de) 2020-05-12 2022-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleitervorrichtungen mit entkopplungskondensatoren
US11670692B2 (en) 2020-05-13 2023-06-06 Taiwan Semiconductor Manufacturing Co., Ltd. Gate-all-around devices having self-aligned capping between channel and backside power rail
US11257712B2 (en) 2020-05-13 2022-02-22 Taiwan Semiconductor Manufacturing Co., Ltd. Source/drain contact formation methods and devices
DE102021109275A1 (de) 2020-05-13 2021-11-18 Taiwan Semiconductor Manufacturing Co., Ltd. Gate-all-around-vorrichtungen mit selbstausgerichteter abdeckung zwischen kanal und rückseitiger leistungsschiene
US11631745B2 (en) 2020-05-15 2023-04-18 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure with uneven gate profile
DE102021109147A1 (de) 2020-05-15 2021-11-18 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleitervorrichtungsstruktur mit ungleichmässigem gateprofil
US11393924B2 (en) 2020-05-18 2022-07-19 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with high contact area
US11217629B2 (en) 2020-05-19 2022-01-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
US11996409B2 (en) 2020-05-20 2024-05-28 Taiwan Semiconductor Manufacturing Co., Ltd. Stacking CMOS structure
US11791218B2 (en) 2020-05-20 2023-10-17 Taiwan Semiconductor Manufacturing Co., Ltd. Dipole patterning for CMOS devices
US11437492B2 (en) 2020-05-20 2022-09-06 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of manufacture
DE102020127567A1 (de) 2020-05-20 2021-11-25 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleitervorrichtung und verfahren zu ihrer herstellung
US11527527B2 (en) 2020-05-21 2022-12-13 Taiwan Semiconductor Manufacturing Company, Ltd. Tap cell, integrated circuit structure and forming method thereof
US11282843B2 (en) 2020-05-22 2022-03-22 Taiwan Semiconductor Manufacturing Co., Ltd. Memory device, SRAM cell, and manufacturing method thereof
US11374089B2 (en) 2020-05-22 2022-06-28 Taiwan Semiconductor Manufacturing Co., Ltd. Shallow trench isolation (STI) contact structures and methods of forming same
US11349005B2 (en) 2020-05-22 2022-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Silicide structures in transistors and methods of forming
US11450572B2 (en) 2020-05-22 2022-09-20 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US11295989B2 (en) 2020-05-26 2022-04-05 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structures for semiconductor devices
TWI762196B (zh) 2020-05-26 2022-04-21 台灣積體電路製造股份有限公司 半導體裝置與其製造方法
US11637101B2 (en) 2020-05-26 2023-04-25 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
US11289383B2 (en) 2020-05-27 2022-03-29 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US11417767B2 (en) 2020-05-27 2022-08-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices including backside vias and methods of forming the same
US11532703B2 (en) 2020-05-27 2022-12-20 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
DE102020122828B4 (de) 2020-05-27 2022-08-11 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleitervorrichtungen, aufweisend rückseitige durchkontaktierungen und verfahren zu deren bildung
US11862561B2 (en) 2020-05-28 2024-01-02 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices with backside routing and method of forming same
US11682711B2 (en) 2020-05-28 2023-06-20 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having multi-layered gate spacers
US11929329B2 (en) 2020-05-28 2024-03-12 Taiwan Semiconductor Manufacturing Company, Ltd. Damascene process using cap layer
US11410876B2 (en) 2020-05-28 2022-08-09 Taiwan Semiconductor Manufacturing Co., Ltd Semiconductor device with air gaps and method of fabrication thereof
US11502199B2 (en) 2020-05-28 2022-11-15 Taiwan Semiconductor Manufacturing Co, Ltd. Independent control of stacked semiconductor device
DE102021102939A1 (de) 2020-05-28 2021-12-02 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleiterbauelemente und herstellungsverfahren
US11380768B2 (en) 2020-05-28 2022-07-05 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US11532731B2 (en) 2020-05-28 2022-12-20 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices and methods of manufacture
US11600528B2 (en) 2020-05-28 2023-03-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and method for forming the same
DE102020131611B4 (de) 2020-05-28 2025-03-27 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleitervorrichtung mit luftspalten und verfahren zu deren herstellung
US11664374B2 (en) 2020-05-29 2023-05-30 Taiwan Semiconductor Manufacturing Co., Ltd. Backside interconnect structures for semiconductor devices and methods of forming the same
US11935793B2 (en) 2020-05-29 2024-03-19 Taiwan Semiconductor Manufacturing Co., Ltd. Dual dopant source/drain regions and methods of forming same
US11637126B2 (en) 2020-05-29 2023-04-25 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device and method of forming the same
US11195752B1 (en) 2020-05-29 2021-12-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of forming same
US11264283B2 (en) 2020-05-29 2022-03-01 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-channel devices and methods of manufacture
US11723209B2 (en) 2020-05-29 2023-08-08 Taiwan Semiconductor Manufacturing Company, Ltd. Three-dimensional memory device and manufacturing method thereof
US11715777B2 (en) 2020-05-29 2023-08-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US11527533B2 (en) * 2020-05-29 2022-12-13 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET pitch scaling
US11443987B2 (en) 2020-05-29 2022-09-13 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices with backside air gap dielectric
US11302580B2 (en) 2020-05-29 2022-04-12 Taiwan Semiconductor Manufacturing Co., Ltd. Nanosheet thickness
US11302798B2 (en) 2020-05-29 2022-04-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices with air gate spacer and air gate cap
US11799002B2 (en) 2020-05-29 2023-10-24 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices and methods of forming the same
TW202145484A (zh) 2020-05-29 2021-12-01 台灣積體電路製造股份有限公司 半導體裝置
US11699742B2 (en) 2020-05-29 2023-07-11 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with varying numbers of channel layers and method of fabrication thereof
US11527539B2 (en) 2020-05-29 2022-12-13 Taiwan Semiconductor Manufacturing Co., Ltd. Four-poly-pitch SRAM cell with backside metal tracks
TW202145513A (zh) 2020-05-29 2021-12-01 台灣積體電路製造股份有限公司 記憶體元件
US11444198B2 (en) 2020-05-29 2022-09-13 Taiwan Semiconductor Manufacturing Co., Ltd. Work function control in gate structures
US11888064B2 (en) 2020-06-01 2024-01-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US11699735B2 (en) 2020-06-05 2023-07-11 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structure and method
DE102021106285A1 (de) 2020-06-05 2021-12-09 Taiwan Semiconductor Manufacturing Co., Ltd. Gate-struktur und verfahren
CN113299648B (zh) 2020-06-05 2024-12-24 台湾积体电路制造股份有限公司 半导体器件及其制造方法
US11361994B2 (en) 2020-06-08 2022-06-14 Taiwan Semiconductor Manufacturing Co., Ltd. Fully self-aligned interconnect structure
US11424347B2 (en) 2020-06-11 2022-08-23 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US11417777B2 (en) 2020-06-11 2022-08-16 Taiwan Semiconductor Manufacturing Co., Ltd. Enlargement of GAA nanostructure
US11515165B2 (en) 2020-06-11 2022-11-29 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US11271113B2 (en) 2020-06-12 2022-03-08 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
US11316033B2 (en) 2020-06-12 2022-04-26 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US11417571B2 (en) 2020-06-12 2022-08-16 Taiwan Semiconductor Manufacturing Co., Ltd. Dopant profile control in gate structures for semiconductor devices
US11296095B2 (en) 2020-06-12 2022-04-05 Taiwan Semiconductor Manufacturing Co., Ltd. Memory device and method for forming the same
US11374006B2 (en) 2020-06-12 2022-06-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of forming the same
US12191389B2 (en) 2020-06-15 2025-01-07 Taiwan Semiconductor Manufacturing Company, Ltd. Layered structure, semiconductor device including the same, and manufacturing method thereof
US11282943B2 (en) 2020-06-15 2022-03-22 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-gate devices and fabricating the same with etch rate modulation
US11367784B2 (en) 2020-06-15 2022-06-21 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US11631736B2 (en) 2020-06-15 2023-04-18 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial source/drain feature with enlarged lower section interfacing with backside via
US11637099B2 (en) 2020-06-15 2023-04-25 Taiwan Semiconductor Manufacturing Co., Ltd. Forming ESD devices using multi-gate compatible processes
US11257755B2 (en) 2020-06-15 2022-02-22 Taiwan Semiconductor Manufacturing Co., Ltd. Metal loss prevention in conductive structures
US11398550B2 (en) 2020-06-15 2022-07-26 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with facet S/D feature and methods of forming the same
US11600728B2 (en) 2020-06-15 2023-03-07 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a facet-free source/drain epitaxial structure having an amorphous or polycrystalline layer
US11296080B2 (en) 2020-06-15 2022-04-05 Taiwan Semiconductor Manufacturing Co., Ltd. Source/drain regions of semiconductor devices and methods of forming the same
US11316023B2 (en) 2020-06-15 2022-04-26 Taiwan Semiconductor Manufacturing Co., Ltd. Dumbbell shaped self-aligned capping layer over source/drain contacts and method thereof
US11342334B2 (en) 2020-06-15 2022-05-24 Taiwan Semiconductor Manufacturing Co., Ltd. Memory cell and method
US11367621B2 (en) 2020-06-15 2022-06-21 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
US11444025B2 (en) * 2020-06-18 2022-09-13 Taiwan Semiconductor Manufacturing Company, Ltd. Transistor and fabrication method thereof
US12058867B2 (en) 2020-06-18 2024-08-06 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device
US11563006B2 (en) 2020-06-24 2023-01-24 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method for manufacturing thereof
US11527630B2 (en) 2020-06-24 2022-12-13 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method for fabricating the same
US11728171B2 (en) 2020-06-25 2023-08-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with metal gate fill structure
US11532714B2 (en) 2020-06-25 2022-12-20 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of forming thereof
US11699736B2 (en) 2020-06-25 2023-07-11 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structure and method
US12176392B2 (en) 2020-06-25 2024-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with silicide gate fill structure
US11430700B2 (en) 2020-06-26 2022-08-30 Taiwan Semiconductor Manufacturing Co., Ltd. Trench isolation with conductive structures
US11145734B1 (en) 2020-06-29 2021-10-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with dummy fin and liner and method of forming the same
US11387233B2 (en) 2020-06-29 2022-07-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and methods of forming the same
US11489075B2 (en) 2020-06-29 2022-11-01 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US11848238B2 (en) 2020-06-30 2023-12-19 Taiwan Semiconductor Manufacturing Co., Ltd. Methods for manufacturing semiconductor devices with tunable low-k inner air spacers
US11545546B2 (en) 2020-06-30 2023-01-03 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US11315924B2 (en) 2020-06-30 2022-04-26 Taiwan Semiconductor Manufacturing Co., Ltd. Isolation structure for preventing unintentional merging of epitaxially grown source/drain
US11462549B2 (en) 2020-06-30 2022-10-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of fabricating the same
US11264513B2 (en) 2020-06-30 2022-03-01 Taiwan Semiconductor Manufacturing Co., Ltd. Isolation structures for transistors
US11729967B2 (en) 2020-07-08 2023-08-15 Taiwan Semiconductor Manufacturing Co., Ltd. Capacitor, memory device, and method
US11903189B2 (en) 2020-07-09 2024-02-13 Taiwan Semiconductor Manufacturing Co., Ltd. Three-dimensional memory and fabricating method thereof
US11848239B2 (en) 2020-07-10 2023-12-19 Taiwan Semiconductor Manufacturing Co., Ltd. Patterning method and structures resulting therefrom
US11233005B1 (en) 2020-07-10 2022-01-25 Taiwan Semiconductor Manufacturing Co., Ltd. Method for manufacturing an anchor-shaped backside via
US11437371B2 (en) 2020-07-10 2022-09-06 Taiwan Semiconductor Manufacturing Co., Ltd. Field effect transistors with negative capacitance layers
US11855185B2 (en) 2020-07-16 2023-12-26 Taiwan Semiconductor Manufacturing Co., Ltd. Multilayer masking layer and method of forming same
US11728244B2 (en) 2020-07-17 2023-08-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method for forming the same
US11664278B2 (en) 2020-07-22 2023-05-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with L-shape conductive feature and methods of forming the same
US11195930B1 (en) 2020-07-22 2021-12-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices with backside power rail and methods of fabrication thereof
US11276643B2 (en) 2020-07-22 2022-03-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with backside spacer and methods of forming the same
US12125891B2 (en) 2020-07-22 2024-10-22 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having gate spacers extending below a fin top surface
US11804531B2 (en) 2020-07-23 2023-10-31 Taiwan Semiconductor Manufacturing Co., Ltd. Thin film transfer using substrate with etch stop layer and diffusion barrier layer
US11329163B2 (en) 2020-07-27 2022-05-10 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US11903213B2 (en) 2020-07-29 2024-02-13 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device and method for making same
US11417745B2 (en) 2020-07-30 2022-08-16 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with metal gate stack
US11791401B2 (en) 2020-07-30 2023-10-17 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-gate device and related methods
US11728413B2 (en) 2020-07-30 2023-08-15 Taiwan Semiconductor Manufacturing Co., Ltd. Gate capping structures in semiconductor devices
US11764221B2 (en) 2020-07-30 2023-09-19 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of manufacture
US11532718B2 (en) 2020-07-30 2022-12-20 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET having a gate dielectric comprising a multi-layer structure including an oxide layer with different thicknesses on side and top surfaces of the fins
US11557510B2 (en) 2020-07-30 2023-01-17 Taiwan Semiconductor Manufacturing Co., Ltd. Spacers for semiconductor devices including backside power rails
US11296082B2 (en) 2020-07-30 2022-04-05 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-gate device and related methods
US11456211B2 (en) 2020-07-30 2022-09-27 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming interconnect structure
US11348921B2 (en) 2020-07-31 2022-05-31 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method of manufacturing the same
US12142655B2 (en) 2020-07-31 2024-11-12 Taiwan Semiconductor Manufacturing Co., Ltd. Transistor gate structures and methods of forming the same
US11245023B1 (en) 2020-07-31 2022-02-08 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US11456209B2 (en) 2020-07-31 2022-09-27 Taiwan Semiconductor Manufacturing Co., Ltd. Spacers for semiconductor devices including a backside power rails
US11810960B2 (en) 2020-07-31 2023-11-07 Taiwan Semiconductor Manufacturing Co., Ltd. Contact structures in semiconductor devices
US11862701B2 (en) 2020-07-31 2024-01-02 Taiwan Semiconductor Manufacturing Co., Ltd. Stacked multi-gate structure and methods of fabricating the same
US11217494B1 (en) 2020-07-31 2022-01-04 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices and methods of manufacture
US11444199B2 (en) 2020-08-03 2022-09-13 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US11437240B2 (en) 2020-08-05 2022-09-06 Taiwan Semiconductor Manufacturing Co., Ltd. Transistor gate structure and method of forming
US11527621B2 (en) 2020-08-05 2022-12-13 Taiwan Semiconductor Manufacturing Co., Ltd. Gate electrode deposition and structure formed thereby
US11355587B2 (en) 2020-08-06 2022-06-07 Taiwan Semiconductor Manufacturing Co., Ltd. Source/drain EPI structure for device boost
US11489057B2 (en) 2020-08-07 2022-11-01 Taiwan Semiconductor Manufacturing Co., Ltd. Contact structures in semiconductor devices
US11923436B2 (en) 2020-08-07 2024-03-05 Taiwan Semiconductor Manufacturing Co., Ltd. Source/drain structure for semiconductor device
US11728391B2 (en) 2020-08-07 2023-08-15 Taiwan Semiconductor Manufacturing Co., Ltd. 2d-channel transistor structure with source-drain engineering
US11302816B2 (en) 2020-08-11 2022-04-12 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method for forming the same
US11335806B2 (en) 2020-08-11 2022-05-17 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
US11557518B2 (en) 2020-08-12 2023-01-17 Taiwan Semiconductor Manufacturing Co., Ltd. Gapfill structure and manufacturing methods thereof
US11653581B2 (en) 2020-08-13 2023-05-16 Taiwan Semiconductor Manufacturing Co., Ltd. RRAM device structure and manufacturing method
US11315834B2 (en) 2020-08-13 2022-04-26 Taiwan Semiconductor Manufacturing Co., Ltd. FinFETs with epitaxy regions having mixed wavy and non-wavy portions
US11610979B2 (en) 2020-08-13 2023-03-21 Taiwan Semiconductor Manufacturing Co., Ltd. Profile control in forming epitaxy regions for transistors
US12356710B2 (en) 2020-08-13 2025-07-08 Taiwan Semiconductor Manufacturing Co., Ltd. Fin height and STI depth for performance improvement in semiconductor devices having high-mobility p-channel transistors
US11610890B2 (en) 2020-08-13 2023-03-21 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxy regions extending below STI regions and profiles thereof
US11974441B2 (en) 2020-08-13 2024-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Memory array including epitaxial source lines and bit lines
US12266572B2 (en) 2020-08-13 2025-04-01 Taiwan Semiconductor Manufacturing Co., Ltd. Embedded stressors in epitaxy source/drain regions
US11935941B2 (en) 2020-08-14 2024-03-19 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and method for manufacturing thereof
US11374088B2 (en) 2020-08-14 2022-06-28 Taiwan Semiconductor Manufacturing Co., Ltd. Leakage reduction in gate-all-around devices
US11563083B2 (en) 2020-08-14 2023-01-24 Taiwan Semiconductor Manufacturing Co., Ltd. Dual side contact structures in semiconductor devices
US11430790B2 (en) 2020-08-14 2022-08-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US11437474B2 (en) 2020-08-17 2022-09-06 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structures in transistors and method of forming same
US11757021B2 (en) 2020-08-18 2023-09-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices with fin-top hard mask and methods for fabrication thereof
US12002766B2 (en) 2020-08-18 2024-06-04 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure having isolations between fins and comprising materials with different thermal expansion coefficients (CTE)
US11532607B2 (en) 2020-08-19 2022-12-20 Taiwan Semiconductor Manufacturing Co., Ltd. ESD structure and semiconductor structure
US11335606B2 (en) 2020-08-19 2022-05-17 Taiwan Semiconductor Manufacturing Co., Ltd. Power rails for stacked semiconductor device
US11646377B2 (en) 2020-08-21 2023-05-09 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of manufacture
US11508621B2 (en) 2020-08-21 2022-11-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US11810857B2 (en) 2020-08-25 2023-11-07 Taiwan Semiconductor Manufacturing Co., Ltd. Via for semiconductor device and method
US11482594B2 (en) 2020-08-27 2022-10-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices with backside power rail and method thereof
US11676864B2 (en) 2020-08-27 2023-06-13 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and methods of forming the same
US11616143B2 (en) 2020-08-27 2023-03-28 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices with backside power rail and methods of fabrication thereof
US11404321B2 (en) 2020-08-31 2022-08-02 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method of manufacturing the same
US11302693B2 (en) 2020-08-31 2022-04-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and methods of forming the same
US11615962B2 (en) 2020-09-11 2023-03-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structures and methods thereof
US11600533B2 (en) 2020-09-18 2023-03-07 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device fabrication methods and structures thereof
US11469326B2 (en) 2020-09-18 2022-10-11 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices and methods of fabrication thereof
US11450569B2 (en) 2020-09-18 2022-09-20 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and forming method thereof
US11387322B2 (en) 2020-09-21 2022-07-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having nanosheet transistor and methods of fabrication thereof
US11355398B2 (en) 2020-09-21 2022-06-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and methods of forming the same
US11569234B2 (en) 2020-09-21 2023-01-31 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and methods of forming the same
US11502034B2 (en) 2020-09-21 2022-11-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices with backside power rail and methods of fabrication thereof
US11862694B2 (en) 2020-09-23 2024-01-02 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US11551969B2 (en) 2020-09-23 2023-01-10 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit structure with backside interconnection structure having air gap
US11430701B2 (en) 2020-09-25 2022-08-30 Taiwan Semiconductor Manufacturing Co., Ltd. Gate oxide structures in semiconductor devices
US11349002B2 (en) 2020-09-25 2022-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Isolation structure for for isolating epitaxially grown source/drain regions and method of fabrication thereof
US12412778B2 (en) 2020-09-28 2025-09-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method for reducing line end spacing and semiconductor devices manufactured thereof
US11348929B2 (en) 2020-09-28 2022-05-31 Taiwan Semiconductor Manufacturing Co., Ltd. Memory device and method for forming the same
US11942371B2 (en) 2020-09-29 2024-03-26 Taiwan Semiconductor Manufacturing Co., Ltd. Etch profile control of via opening
US11664272B2 (en) 2020-09-29 2023-05-30 Taiwan Semiconductor Manufacturing Co., Ltd. Etch profile control of gate contact opening
US11705491B2 (en) 2020-09-29 2023-07-18 Taiwan Semiconductor Manufacturing Co., Ltd. Etch profile control of gate contact opening
US11728212B2 (en) 2020-09-29 2023-08-15 Taiwan Semicondcutor Manufacturing Company, Ltd. Integrated circuit structure and manufacturing method thereof
US11967526B2 (en) 2020-09-29 2024-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit structure and manufacturing method thereof
US11581218B2 (en) 2020-09-29 2023-02-14 Taiwan Semiconductor Manufacturing Co., Ltd. Etch profile control of gate contact opening
US11749732B2 (en) 2020-09-29 2023-09-05 Taiwan Semiconductor Manufacturing Company, Ltd. Etch profile control of via opening
US11728173B2 (en) 2020-09-30 2023-08-15 Taiwan Semiconductor Manufacturing Co., Ltd. Masking layer with post treatment
US11721593B2 (en) 2020-09-30 2023-08-08 Tiawan Semiconductor Manufacturing Co., Ltd. Source/drain epitaxial structures for semiconductor devices
US12165973B2 (en) 2020-09-30 2024-12-10 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with backside power rail and method for forming the same
US11404548B2 (en) 2020-10-13 2022-08-02 Taiwan Semiconductor Manufacturing Co., Ltd. Capacitance reduction for backside power rail device
US12154829B2 (en) 2020-10-14 2024-11-26 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing semiconductor devices and semiconductor devices
US11626485B2 (en) 2020-10-14 2023-04-11 Taiwan Semiconductor Manufacturing Co., Ltd. Field effect transistor and method
US11594610B2 (en) 2020-10-15 2023-02-28 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US11894435B2 (en) 2020-10-15 2024-02-06 Taiwan Semiconductor Manufacturing Co., Ltd. Contact plug structure of semiconductor device and method of forming same
US12237230B2 (en) 2020-10-19 2025-02-25 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with leakage current suppression and method for forming the same
US11450743B2 (en) 2020-10-21 2022-09-20 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming a semiconductor device with implantation of impurities at high temperature
US11765892B2 (en) 2020-10-21 2023-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Three-dimensional memory device and method of manufacture
US11737254B2 (en) 2020-10-21 2023-08-22 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device and layout, manufacturing method of the same
US11495463B2 (en) 2020-10-27 2022-11-08 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US11502201B2 (en) 2020-10-27 2022-11-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with backside power rail and methods of fabrication thereof
US11637018B2 (en) 2020-10-27 2023-04-25 Taiwan Semiconductor Manufacturing Co., Ltd. Barrier layer for contact structures of semiconductor devices
US11688807B2 (en) 2020-10-27 2023-06-27 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and methods of forming
US11276604B1 (en) 2020-10-27 2022-03-15 Taiwan Semiconductor Manufacturing Co., Ltd. Radical-activated etching of metal oxides
US11658119B2 (en) 2020-10-27 2023-05-23 Taiwan Semiconductor Manufacturing Company, Ltd. Backside signal interconnection
US12107087B2 (en) 2020-10-30 2024-10-01 Taiwan Semiconductor Manufacturing Company, Ltd Semiconductor device with gate isolation structure and method for forming the same
US11569223B2 (en) 2020-10-30 2023-01-31 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit and method for fabricating the same
US12336266B2 (en) 2020-11-12 2025-06-17 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of forming gate structures with uniform gate length
CN114284267A (zh) 2020-11-13 2022-04-05 台湾积体电路制造股份有限公司 集成电路及其制造方法
US11735470B2 (en) 2020-11-13 2023-08-22 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming semiconductor device structure with source/drain contact
US11521971B2 (en) 2020-11-13 2022-12-06 Taiwan Semiconductor Manufacturing Company, Ltd. Gate dielectric having a non-uniform thickness profile
US11482451B2 (en) 2020-11-20 2022-10-25 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structures
US11854831B2 (en) 2020-11-24 2023-12-26 Taiwan Semiconductor Manufacturing Co., Ltd. Cleaning process for source/drain epitaxial structures
US11374093B2 (en) 2020-11-25 2022-06-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and methods of forming the same
US11450664B2 (en) 2020-11-25 2022-09-20 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having nanosheet transistor and methods of fabrication thereof
US11508807B2 (en) 2020-11-25 2022-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having nanosheet transistor and methods of fabrication thereof
US11450663B2 (en) 2020-11-25 2022-09-20 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and methods of forming the same
US11450666B2 (en) 2020-11-25 2022-09-20 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices including two-dimensional material and methods of fabrication thereof
US11777014B2 (en) 2021-01-04 2023-10-03 Taiwan Semiconductor Manufacturing Co., Ltd. Controlled doping in a gate dielectric layer
US11594455B2 (en) 2021-01-05 2023-02-28 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and manufacturing method for the same
US11527622B2 (en) 2021-01-08 2022-12-13 Taiwan Semiconductor Manufacturing Company, Ltd. Effective work function tuning via silicide induced interface dipole modulation for metal gates
US11784218B2 (en) 2021-01-08 2023-10-10 Taiwan Semiconductor Manufacturing Company, Ltd. Gate air spacer protection during source/drain via hole etching
US11557511B2 (en) 2021-01-12 2023-01-17 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and methods of forming the same
US11948939B2 (en) 2021-01-13 2024-04-02 Taiwan Semiconductor Manufacturing Company, Ltd Profile control of gate structures in semiconductor devices
US11658216B2 (en) 2021-01-14 2023-05-23 Taiwan Semiconductor Manufacturing Company, Ltd. Method and structure for metal gate boundary isolation
US11670681B2 (en) 2021-01-14 2023-06-06 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming fully strained channels
US11502081B2 (en) 2021-01-14 2022-11-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US12035532B2 (en) 2021-01-15 2024-07-09 Taiwan Semiconductor Manufacturing Company, Ltd. Memory array and memory device
US12089414B2 (en) 2021-01-15 2024-09-10 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device and method of forming the same
US11996317B2 (en) 2021-01-15 2024-05-28 Taiwan Semiconductor Manufacturing Co., Ltd. Methods for forming isolation regions by depositing and oxidizing a silicon liner
US11749566B2 (en) 2021-01-15 2023-09-05 Taiwan Semiconductor Manufacturing Co., Ltd. Inner filler layer for multi-patterned metal gate for nanostructure transistor
US11923357B2 (en) 2021-01-18 2024-03-05 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and methods of forming the same
US11532522B2 (en) 2021-01-19 2022-12-20 Taiwan Semiconductor Manufacturing Company, Ltd. Source/drain EPI structure for improving contact quality
US11411079B1 (en) 2021-01-21 2022-08-09 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US11688786B2 (en) 2021-01-22 2023-06-27 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US12057341B2 (en) 2021-01-27 2024-08-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with gate cut structure and method of forming the same
US11715762B2 (en) 2021-01-28 2023-08-01 Taiwan Semiconductor Manufacturing Co., Ltd. Transistor gate structures and methods of forming the same
US11588018B2 (en) 2021-01-28 2023-02-21 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure with nanostructure and method for forming the same
US11637180B2 (en) 2021-01-28 2023-04-25 Taiwan Semiconductor Manufacturing Co., Ltd. Transistor gate structures and methods of forming the same
US11810961B2 (en) 2021-01-28 2023-11-07 Taiwan Semiconductor Manufacturing Co., Ltd. Transistor gate structures and methods of forming the same
US11538927B2 (en) 2021-01-28 2022-12-27 Taiwan Semiconductor Manufacturing Company, Ltd. Nanostructures and method for manufacturing the same
US12068322B2 (en) 2021-01-29 2024-08-20 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming a multi-layer epitaxial source/drain region having varying concentrations of boron and germanium therein
US11600703B2 (en) 2021-01-29 2023-03-07 Taiwan Semiconductor Manufacturing Co., Ltd. Germanium tin gate-all-around device
US12243783B2 (en) 2021-02-04 2025-03-04 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial source/drain recess formation with metal-comprising masking layers and structures resulting therefrom
US12417948B2 (en) 2021-02-04 2025-09-16 Taiwan Semiconductor Manufacturing Co., Ltd. Hybrid film scheme for self-aligned contact
US11581411B2 (en) 2021-02-09 2023-02-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and methods of forming the same
US11984356B2 (en) 2021-02-11 2024-05-14 Taiwan Semiconductor Manufacturing Co., Ltd. Contact structures in semiconductor devices
US12002885B2 (en) 2021-02-11 2024-06-04 Taiwan Semiconductor Manufacturing Co., Ltd. Gate contact and via structures in semiconductor devices
US11581410B2 (en) 2021-02-12 2023-02-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US12040382B2 (en) 2021-02-12 2024-07-16 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming a nano-FET semiconductor device
US11621197B2 (en) 2021-02-15 2023-04-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with gate cut feature and method for forming the same
US11798943B2 (en) 2021-02-18 2023-10-24 Taiwan Semiconductor Manufacturing Co., Ltd. Transistor source/drain contacts and methods of forming the same
US12266541B2 (en) 2021-02-18 2025-04-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US11563109B2 (en) 2021-02-19 2023-01-24 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and method for forming the same
US11652171B2 (en) 2021-02-22 2023-05-16 Taiwan Semiconductor Manufacturing Co., Ltd. Contact for semiconductor device and method of forming thereof
US11640941B2 (en) 2021-02-25 2023-05-02 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices including metal gate protection and methods of fabrication thereof
US11652140B2 (en) 2021-02-25 2023-05-16 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and methods of forming the same
US11688767B2 (en) 2021-02-25 2023-06-27 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and method for forming the same
US11670595B2 (en) 2021-02-25 2023-06-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and methods of forming the same
US11848209B2 (en) 2021-02-26 2023-12-19 Taiwan Semiconductor Manufacturing Co., Ltd. Patterning semiconductor devices and structures resulting therefrom
US12484257B2 (en) 2021-02-26 2025-11-25 Taiwan Semiconductor Manufacturing Co., Ltd Method of forming gate structures for nanostructures
US11855143B2 (en) 2021-02-26 2023-12-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structures and methods thereof
US11569348B2 (en) 2021-02-26 2023-01-31 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods of fabrication thereof
US11676862B2 (en) 2021-02-26 2023-06-13 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and methods of forming the same
US11532628B2 (en) 2021-02-26 2022-12-20 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US11735483B2 (en) 2021-02-26 2023-08-22 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming epitaxial source/drain features using a self-aligned mask and semiconductor devices fabricated thereof
US11610805B2 (en) 2021-02-26 2023-03-21 Taiwan Semiconductor Manufacturing Company, Ltd. Replacement material for backside gate cut feature
US11626495B2 (en) 2021-02-26 2023-04-11 Taiwan Semiconductor Manufacturing Company, Ltd. Protective liner for source/drain contact to prevent electrical bridging while minimizing resistance
US12300540B2 (en) 2021-02-26 2025-05-13 Taiwan Semiconductor Manufacturing Co., Ltd. Conductive feature of semiconductor device and method of forming same
US11854963B2 (en) 2021-03-03 2023-12-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor interconnection structure and methods of forming the same
US11887985B2 (en) 2021-03-04 2024-01-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US11626482B2 (en) 2021-03-04 2023-04-11 Taiwan Semiconductor Manufacturing Co., Ltd. Air spacer formation with a spin-on dielectric material
US12087587B2 (en) 2021-03-04 2024-09-10 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structures in transistors and method of forming same
US12230634B2 (en) 2021-03-04 2025-02-18 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods of fabricating the same
US12243915B2 (en) 2021-03-05 2025-03-04 Taiwan Semiconductor Manufacturing Co., Ltd. Graphene wrap-around contact
US11688768B2 (en) 2021-03-05 2023-06-27 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit structure with source/drain spacers
US11387109B1 (en) 2021-03-05 2022-07-12 Taiwan Semiconductor Manufacturing Co., Ltd. CMP process and methods thereof
US11538858B2 (en) 2021-03-05 2022-12-27 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device, method of forming the same, and memory array
US12317566B2 (en) 2021-03-05 2025-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Isolated fin structures in semiconductor devices
US12040383B2 (en) 2021-03-05 2024-07-16 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-gate device and related methods
US11876119B2 (en) 2021-03-05 2024-01-16 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with gate isolation features and fabrication method of the same
US12051594B2 (en) 2021-03-05 2024-07-30 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming semiconductor device structure with gate
US12136570B2 (en) 2021-03-05 2024-11-05 Taiwan Semiconductor Manufacturing Co., Ltd. Graphene layer for low resistance contacts and damascene interconnects
US12087837B2 (en) 2021-03-05 2024-09-10 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with backside contact and methods of forming such
US11996324B2 (en) 2021-03-05 2024-05-28 Taiwan Semiconductor Manufacturing Co., Ltd. Conductive feature of a semiconductor device and method of forming same
US11527614B2 (en) 2021-03-09 2022-12-13 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure with conductive structure and method for manufacturing the same
US12040233B2 (en) 2021-03-10 2024-07-16 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field-effect transistor device and method
US11855153B2 (en) 2021-03-10 2023-12-26 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US12125886B2 (en) 2021-03-10 2024-10-22 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field-effect transistor device and method
US11810948B2 (en) 2021-03-10 2023-11-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US11532725B2 (en) 2021-03-11 2022-12-20 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming sidewall spacers and semiconductor devices fabricated thereof
US12477778B2 (en) 2021-03-11 2025-11-18 Taiwan Semiconductor Manufacturing Company, Ltd. Epitaxial structure for source/drain contact for semiconductor structure having fin structure
US11581437B2 (en) 2021-03-11 2023-02-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and methods of forming the same
US12166079B2 (en) 2021-03-11 2024-12-10 Taiwan Semiconductor Manufacturing Co., Ltd. 2D channel transistors with low contact resistance
US12205997B2 (en) 2021-03-12 2025-01-21 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit including backside conductive vias
US11942358B2 (en) 2021-03-12 2024-03-26 Taiwan Semiconductor Manufacturing Co., Ltd. Low thermal budget dielectric for semiconductor devices
US11830912B2 (en) 2021-03-18 2023-11-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and methods of forming the same
US11670499B2 (en) 2021-03-18 2023-06-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming conductive feature including cleaning step
US11862700B2 (en) 2021-03-19 2024-01-02 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure including forksheet transistors and methods of forming the same
US12376337B2 (en) 2021-03-19 2025-07-29 Taiwan Semiconductor Manufacturing Company, Ltd. Air inner spacers
US12040219B2 (en) 2021-03-19 2024-07-16 Taiwan Semiconductor Manufacturing Company, Ltd. Etch profile control of isolation trench
US11575026B2 (en) 2021-03-19 2023-02-07 Taiwan Semiconductor Manufacturing Co., Ltd. Source/drain structure for semiconductor device
US12476145B2 (en) 2021-03-19 2025-11-18 Taiwan Semiconductor Manufacturing Co., Ltd. Self-aligned cut-metal layer method
US11978773B2 (en) 2021-03-25 2024-05-07 Taiwan Semiconductor Manufacturing Company, Ltd. Formation method of semiconductor device structure with semiconductor nanostructures
US12034054B2 (en) 2021-03-25 2024-07-09 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method for forming the same
US12317551B2 (en) 2021-03-26 2025-05-27 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices including backside power rails and methods of manufacture
US11942479B2 (en) 2021-03-26 2024-03-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
US12119259B2 (en) 2021-03-26 2024-10-15 Taiwan Semiconductor Manufacturing Co., Ltd. Transistor gate contacts and methods of forming the same
US11984483B2 (en) 2021-03-26 2024-05-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacturing thereof
US11482518B2 (en) 2021-03-26 2022-10-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structures having wells with protruding sections for pickup cells
US11605558B2 (en) 2021-03-26 2023-03-14 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit interconnect structure having discontinuous barrier layer and air gap
US11605591B2 (en) 2021-03-30 2023-03-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and methods of forming the same
US11894460B2 (en) 2021-03-30 2024-02-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having nanosheet transistor and methods of fabrication thereof
US11843032B2 (en) 2021-03-30 2023-12-12 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure with channel and method for forming the same
US12230713B2 (en) 2021-03-30 2025-02-18 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and methods of forming the same
US11682675B2 (en) 2021-03-30 2023-06-20 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field-effect transistor device and method
US12068248B2 (en) 2021-03-30 2024-08-20 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor interconnection structure and methods of forming the same
US12266601B2 (en) 2021-03-30 2025-04-01 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure with backside contact
US12205985B2 (en) 2021-03-31 2025-01-21 Taiwan Semiconductor Manufacturing Co., Ltd. Field effect transistor with inactive fin and method
US11749729B2 (en) 2021-03-31 2023-09-05 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device, integrated circuit component and manufacturing methods thereof
US12170327B2 (en) 2021-03-31 2024-12-17 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and manufacturing method of the same
US12087772B2 (en) 2021-03-31 2024-09-10 Taiwan Semiconductor Manufacturing Co., Ltd. Nanosheet device architecture for cell-height scaling
US11961884B2 (en) 2021-03-31 2024-04-16 Taiwan Semiconductor Manufacturing Company, Ltd. Fill structures with air gaps
US12142640B2 (en) 2021-03-31 2024-11-12 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structures with multiple threshold voltage offerings and methods thereof
US11515393B2 (en) 2021-03-31 2022-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having nanosheet transistor and methods of fabrication thereof
US12087771B2 (en) 2021-03-31 2024-09-10 Taiwan Semiconductor Manufacturing Co., Ltd. Multiple patterning gate scheme for nanosheet rule scaling
US11901228B2 (en) 2021-03-31 2024-02-13 Taiwan Semiconductor Manufacturing Co., Ltd. Self-aligned scheme for semiconductor device and method of forming the same
US12464772B2 (en) 2021-03-31 2025-11-04 Taiwan Semiconductor Manufacturing Company, Ltd. Buried gate structures for semiconductor devices
US12062658B2 (en) 2021-03-31 2024-08-13 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming an integrated circuit having transistor gates over an interconnection structure
US11600534B2 (en) 2021-03-31 2023-03-07 Taiwan Semiconductor Manufacturing Co., Ltd. Source/drain structures and method of forming
US11646346B2 (en) 2021-04-08 2023-05-09 Taiwan Semiconductor Manufacturing Company, Ltd. Contact structure with air spacer for semiconductor device and method for forming the same
US11658074B2 (en) 2021-04-08 2023-05-23 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for FinFET device with source/drain modulation
US12136600B2 (en) 2021-04-08 2024-11-05 Taiwan Semiconductor Manufacturing Company, Ltd. Grounded metal ring structure for through-silicon via
US11942556B2 (en) 2021-04-08 2024-03-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
US11688793B2 (en) 2021-04-08 2023-06-27 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit structure and manufacturing method thereof
US12154964B2 (en) 2021-04-08 2024-11-26 Taiwan Semiconductor Manufacturing Company, Ltd. Metal gates with layers for transistor threshold voltage tuning and methods of forming the same
US11664378B2 (en) 2021-04-08 2023-05-30 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and methods of forming the same
US12166076B2 (en) 2021-04-08 2024-12-10 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and methods of forming the same
US12464812B2 (en) 2021-04-08 2025-11-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure including forksheet transistors and methods of forming the same
US11695042B2 (en) 2021-04-08 2023-07-04 Taiwan Semiconductor Manufacturing Co., Ltd. Transistor contacts and methods of forming the same
US12369366B2 (en) 2021-04-09 2025-07-22 Taiwan Semiconductor Manufacturing Co., Ltd. Convergent fin and nanostructure transistor structure and method
US11784228B2 (en) 2021-04-09 2023-10-10 Taiwan Semiconductor Manufacturing Company, Ltd. Process and structure for source/drain contacts
US12199097B2 (en) 2021-04-09 2025-01-14 Taiwan Semiconductor Manufacturing Co., Ltd. Seam free isolation structures and method for making the same
US12317554B2 (en) 2021-04-09 2025-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Contact structures for semiconductor devices
US11545559B2 (en) 2021-04-14 2023-01-03 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US11742353B2 (en) 2021-04-14 2023-08-29 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
US12132118B2 (en) 2021-04-15 2024-10-29 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having a multilayer source/drain region and methods of manufacture
US12317468B2 (en) 2021-04-15 2025-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device and manufacturing thereof
US11710664B2 (en) 2021-04-15 2023-07-25 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure with backside via contact and a protection liner layer
US12501660B2 (en) 2021-04-16 2025-12-16 Taiwan Semiconductor Manufacturing Co., Ltd. Field effect transistor with merged epitaxy backside cut and method
US11855092B2 (en) 2021-04-16 2023-12-26 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of forming same
US11728218B2 (en) 2021-04-16 2023-08-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US11996468B2 (en) 2021-04-16 2024-05-28 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-gate device fabrication and structures thereof
US12087845B2 (en) 2021-04-21 2024-09-10 Taiwan Semiconductor Manufacturing Co., Ltd. System and methods of manufacturing semiconductor devices
US11848372B2 (en) 2021-04-21 2023-12-19 Taiwan Semiconductor Manufacturing Co., Ltd. Method and structure for reducing source/drain contact resistance at wafer backside
KR102855378B1 (ko) 2021-04-21 2025-09-04 삼성전자주식회사 반도체 장치 및 그 제조 방법
US12087641B2 (en) 2021-04-22 2024-09-10 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming semiconductor structure with fins using a multilayer mask structure for etching to form nanostructures
US11908701B2 (en) 2021-04-22 2024-02-20 Taiwan Semiconductor Manufacturing Company, Ltd. Patterning method and manufacturing method of semiconductor device
US11996327B2 (en) 2021-04-22 2024-05-28 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structure and methods of forming the same
US12191393B2 (en) 2021-04-23 2025-01-07 Taiwan Semiconductor Manufacturing Co., Ltd. Low Ge isolated epitaxial layer growth over nano-sheet architecture design for RP reduction
US11482595B1 (en) 2021-04-23 2022-10-25 Taiwan Semiconductor Manufacturing Co., Ltd. Dual side contact structures in semiconductor devices
US11737287B2 (en) 2021-04-23 2023-08-22 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device, method of forming the same, and semiconductor device having the same
US11710774B2 (en) 2021-04-23 2023-07-25 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming epitaxial source/drain features and semiconductor devices fabricated thereof
US12154850B2 (en) 2021-04-23 2024-11-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor interconnection structures and methods of forming the same
US12249636B2 (en) 2021-04-23 2025-03-11 Taiwan Semiconductor Manufacturing Company, Ltd. Tuning gate lengths in multi-gate field effect transistors
US12010928B2 (en) 2021-04-23 2024-06-11 Taiwan Semiconductor Manufacturing Company, Ltd. Memory cell, semiconductor device having the same, and methods of manufacturing the same
US11652152B2 (en) 2021-04-23 2023-05-16 Taiwan Semiconductor Manufacturing Co., Ltd. Capping structures in semiconductor devices
US11929287B2 (en) 2021-04-23 2024-03-12 Taiwan Semiconductor Manufacturing Co., Ltd. Dielectric liner for field effect transistors
US12239031B2 (en) 2021-04-23 2025-02-25 Taiwan Semiconductor Manufacturing Company, Ltd. Memory cell, semiconductor device having the same, and methods of manufacturing the same
US12336240B2 (en) 2021-04-23 2025-06-17 Taiwan Semiconductor Manufacturing Co., Ltd. Transistor including dielectric barrier and manufacturing method thereof
US11855186B2 (en) 2021-04-28 2023-12-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
US12125851B2 (en) 2021-04-28 2024-10-22 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET device and method of forming the same
US11996363B2 (en) 2021-04-28 2024-05-28 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structure including a heat dissipation layer and methods of forming the same
US11869892B2 (en) 2021-04-29 2024-01-09 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and methods of forming the same
US11915937B2 (en) 2021-04-29 2024-02-27 Taiwan Semiconductor Manufacturing Co., Ltd. Fluorine incorporation method for nanosheet
US12243823B2 (en) 2021-04-29 2025-03-04 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having backside gate contact
US11855079B2 (en) 2021-04-30 2023-12-26 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit with backside trench for metal gate definition
US11978674B2 (en) 2021-05-05 2024-05-07 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and methods of forming the same
US11967622B2 (en) 2021-05-05 2024-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Inter block for recessed contacts and methods forming same
US11600699B2 (en) 2021-05-05 2023-03-07 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure integrating air gaps and methods of forming the same
US11705371B2 (en) 2021-05-05 2023-07-18 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices having merged source/drain features and methods of fabrication thereof
US12336237B2 (en) 2021-05-05 2025-06-17 Taiwan Semiconductor Manufacturing Co., Ltd. Source/drain regions of semiconductor device and method of forming the same
US12272729B2 (en) 2021-05-05 2025-04-08 Taiwan Semiconductor Manufacturing Company, Ltd. Asymmetric source/drain for backside source contact
US11990404B2 (en) 2021-05-05 2024-05-21 Taiwan Semiconductor Manufacturing Co., Ltd. Heat dissipation for semiconductor devices and methods of manufacture
US11476342B1 (en) 2021-05-05 2022-10-18 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with improved source and drain contact area and methods of fabrication thereof
US12107007B2 (en) 2021-05-05 2024-10-01 Taiwan Semiconductor Manufacturing Co., Ltd. Recessed contacts at line end and methods forming same
US11942478B2 (en) 2021-05-06 2024-03-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and methods of forming the same
US11991887B2 (en) 2021-05-06 2024-05-21 Taiwan Semiconductor Manufacturing Company, Ltd. Three-dimensional memory
US12324188B2 (en) 2021-05-06 2025-06-03 Taiwan Semiconductor Manufacturing Co., Ltd. Field effect transistor with source/drain contact isolation structure and method
US11756884B2 (en) 2021-05-06 2023-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnection structure and methods of forming the same
US11776895B2 (en) 2021-05-06 2023-10-03 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method for manufacturing the same
US12382660B2 (en) 2021-05-06 2025-08-05 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and formation method of semiconductor device with embedded epitaxial structure
US12532523B2 (en) 2021-05-07 2026-01-20 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices with modulated gate structures
US20220359545A1 (en) * 2021-05-07 2022-11-10 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor memory devices with dielectric fin structures
US12094823B2 (en) 2021-05-07 2024-09-17 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnection structure and methods of forming the same
US11640940B2 (en) 2021-05-07 2023-05-02 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming interconnection structure including conductive graphene layers
US11575047B2 (en) 2021-05-12 2023-02-07 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device active region profile and method of forming the same
US12183797B2 (en) 2021-05-12 2024-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Profile control of channel structures for semiconductor devices
US12477764B2 (en) 2021-05-13 2025-11-18 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a source/drain of a semiconductor device using multiple implantation processes
US12080759B2 (en) * 2021-05-13 2024-09-03 Taiwan Semiconductor Manufacturing Co., Ltd. Transistor source/drain regions and methods of forming the same
US11792977B2 (en) 2021-05-13 2023-10-17 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor memory structure
US11996484B2 (en) 2021-05-13 2024-05-28 Taiwan Semiconductor Manufacturing Company, Ltd. Nano-sheet-based complementary metal-oxide-semiconductor devices with asymmetric inner spacers
US12027583B2 (en) 2021-05-13 2024-07-02 Taiwan Semiconductor Manufacturing Company, Ltd. Gate structures for semiconductor devices
US12419084B2 (en) 2021-05-13 2025-09-16 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of forming transistor source/drain regions comprising carbon liner layers
US12310050B2 (en) 2021-05-20 2025-05-20 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and method of forming the same
US11757018B2 (en) 2021-05-27 2023-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Formation method of semiconductor device with gate all around structure
US12336211B2 (en) 2021-05-27 2025-06-17 Taiwan Semiconductor Manufacturing Co., Ltd. Dielectric layer on semiconductor device and method of forming the same
US11742416B2 (en) 2021-05-27 2023-08-29 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method for manufacturing the same
US11901415B2 (en) 2021-05-28 2024-02-13 Taiwan Semiconductor Manufacturing Co., Ltd. Transistor isolation structures
US11869954B2 (en) 2021-05-28 2024-01-09 Taiwan Semiconductor Manufacturing Co., Ltd. Nanostructured channel regions for semiconductor devices
US12021116B2 (en) 2021-06-04 2024-06-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor gates and methods of forming the same
US11764277B2 (en) 2021-06-04 2023-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method for manufacturing the same
US12009208B2 (en) 2021-06-07 2024-06-11 Taiwan Semiconductor Manufacturing Company, Ltd. Deposition equipment with adjustable temperature source
US12543557B2 (en) 2021-06-14 2026-02-03 Taiwan Semiconductor Manufacturing Co., Ltd. System and method to reduce layout dimensions using non-perpendicular process scheme
US12107006B2 (en) 2021-06-15 2024-10-01 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing semiconductor structure with dielectric feature
US11688645B2 (en) 2021-06-17 2023-06-27 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and formation method of semiconductor device with fin structures
US11996321B2 (en) 2021-06-17 2024-05-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method for forming the same
US12471343B2 (en) 2021-06-17 2025-11-11 Taiwan Semiconductor Manufacturing Company, Ltd. Gate isolation features in semiconductor devices and methods of fabricating the same
US12272597B2 (en) 2021-06-17 2025-04-08 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor interconnection structures and methods of forming the same
US11810919B2 (en) 2021-06-17 2023-11-07 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure with conductive via structure and method for forming the same
US12349383B2 (en) 2021-06-17 2025-07-01 Taiwan Semiconductor Manufacturing Company, Ltd. Isolation structures in semiconductor devices
US12310092B2 (en) 2021-06-18 2025-05-20 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-functional transistors in semiconductor devices
US12347717B2 (en) 2021-06-24 2025-07-01 Taiwan Semiconductor Manufacturing Company, Ltd. Debonding structures for wafer bonding
US12495579B2 (en) 2021-06-24 2025-12-09 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with leakage current suppression and method of forming the same
US12015060B2 (en) 2021-06-24 2024-06-18 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and formation method of semiconductor device with backside contact
US12205998B2 (en) 2021-06-24 2025-01-21 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with wrap around silicide and hybrid fin
US11916151B2 (en) 2021-06-25 2024-02-27 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure having fin with all around gate
US12334431B2 (en) 2021-06-25 2025-06-17 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor interconnection structures and methods of forming the same
US12349407B2 (en) 2021-06-30 2025-07-01 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing semiconductor structure with dielectric feature
US11916122B2 (en) 2021-07-08 2024-02-27 Taiwan Semiconductor Manufacturing Co., Ltd. Gate all around transistor with dual inner spacers
US12166035B2 (en) 2021-07-08 2024-12-10 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET with bowl-shaped gate isolation and method
US11855167B2 (en) 2021-07-08 2023-12-26 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and formation method of semiconductor device with nanosheet structure
US12206004B2 (en) 2021-07-08 2025-01-21 Taiwan Semiconductor Manufacturing Company, Ltd. Gate all around device and method of forming the same
US12057506B2 (en) 2021-07-08 2024-08-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
US12087775B2 (en) 2021-07-08 2024-09-10 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structures in transistor devices and methods of forming same
US12148807B2 (en) 2021-07-09 2024-11-19 Taiwan Semiconductor Manufacturing Company, Ltd. Backside contact structures with stacked metal silicide layers for source/drain region of fin field transistors
US12159912B2 (en) 2021-07-09 2024-12-03 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit including spacer structure for transistors
US12191205B2 (en) 2021-07-09 2025-01-07 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
US12376357B2 (en) 2021-07-09 2025-07-29 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field-effect transistor device and method
US12444680B2 (en) 2021-07-09 2025-10-14 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structures with conductive carbon layers
US12310073B2 (en) 2021-07-09 2025-05-20 Taiwan Semiconductor Manufacturing Company, Ltd. Transistors having two-dimensional semiconductor channels
US12191379B2 (en) 2021-07-09 2025-01-07 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-gate semiconductor device with inner spacer and fabrication method thereof
US12191212B2 (en) 2021-07-09 2025-01-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor method and device
US12363933B2 (en) 2021-07-09 2025-07-15 Taiwan Semiconductor Manufacturing Company, Ltd. Dielectric structures in semiconductor devices
US12382676B2 (en) 2021-07-09 2025-08-05 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and methods of forming the same
US12426347B2 (en) 2021-07-09 2025-09-23 Taiwan Semiconductor Manufacturing Company Ltd. Multi-gate transistor channel height adjustment
US12412775B2 (en) 2021-07-09 2025-09-09 Taiwan Semiconductor Manufacturing Company, Ltd. Isolation structures in semiconductor devices
US12165997B2 (en) 2021-07-15 2024-12-10 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacturing the same
US12284797B2 (en) 2021-07-15 2025-04-22 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device and manufacturing thereof
US12520555B2 (en) 2021-07-16 2026-01-06 Taiwan Semiconductor Manufacturing Company, Ltd. Inner spacer for a multi-gate device and related methods
US12406848B2 (en) 2021-07-16 2025-09-02 Taiwan Semiconductor Manufacturing Company, Ltd Method of fabricating a gate cut feature for multi-gate semiconductor devices
US12402364B2 (en) 2021-07-16 2025-08-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and method for forming the same
US12255239B2 (en) 2021-07-16 2025-03-18 Taiwan Semiconductor Manufacturing Co., Ltd. Liner layer for backside contacts of semiconductor devices
US11626400B2 (en) 2021-07-16 2023-04-11 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure incorporating air gap
US12021125B2 (en) 2021-07-16 2024-06-25 Taiwan Semiconductor Manufacturing Co., Ltd. High selectivity etching with germanium-containing gases
US12002663B2 (en) 2021-07-16 2024-06-04 Taiwan Semiconductor Manufacturing Company, Ltd. Processing apparatus and method for forming semiconductor structure
US12062576B2 (en) 2021-07-16 2024-08-13 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices with a rare earth metal oxide layer
US12075608B2 (en) 2021-07-16 2024-08-27 Taiwan Semiconductor Manufacturing Company Ltd. Multi-gate semiconductor device for memory and method for forming the same
US12100770B2 (en) 2021-07-19 2024-09-24 Taiwan Semiconductor Manufacturing Company, Ltd. Field effect transistor with gate isolation structure and method
CN115643754B (zh) * 2021-07-20 2025-09-12 长鑫存储技术有限公司 半导体结构及其制备方法
US12513952B2 (en) 2021-07-22 2025-12-30 Taiwan Semiconducor Manufacturing Company, Ltd. Method for fabricating a semiconductor device including etching nanostructures
US12154973B2 (en) 2021-07-22 2024-11-26 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field-effect transistor device and method
US12317549B2 (en) 2021-07-23 2025-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Dielectric fin structures with varying height
US11942329B2 (en) 2021-07-23 2024-03-26 Taiwan Semiconductor Manufacturing Company, Ltd. Formation method of semiconductor device with dielectric isolation structure
US12336272B2 (en) 2021-07-23 2025-06-17 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and methods of forming the same
US12170203B2 (en) 2021-07-23 2024-12-17 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit with conductive via formation on self-aligned gate metal cut
US12342587B2 (en) 2021-07-23 2025-06-24 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit with nanostructure transistors and bottom dielectric insulators
US12002845B2 (en) 2021-07-23 2024-06-04 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US12074204B2 (en) 2021-07-23 2024-08-27 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method for forming the same
US12396210B2 (en) 2021-07-29 2025-08-19 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods for fabrication thereof
US12237419B2 (en) 2021-07-29 2025-02-25 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structures in transistor devices and methods of forming same
US12414340B2 (en) 2021-07-29 2025-09-09 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure including nanosheet channel structure and method for forming the same
US12113113B2 (en) 2021-07-29 2024-10-08 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with a core-shell feature and method for forming the same
US12446269B2 (en) 2021-07-30 2025-10-14 Taiwan Semiconductor Manufacturing Company, Ltd. Strained nanosheets on silicon-on-insulator substrate
US12495594B2 (en) 2021-07-30 2025-12-09 Taiwan Semiconductor Manufacturing Company, Ltd. Spacer structures for semiconductor devices
US11935954B2 (en) 2021-07-30 2024-03-19 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and method for forming the same
US12363947B2 (en) 2021-07-30 2025-07-15 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and formation method of semiconductor device with contact structures
US12513951B2 (en) 2021-08-04 2025-12-30 Taiwan Semiconductor Manufacturing Company, Ltd. Gate structures in semiconductor devices
US12501687B2 (en) 2021-08-04 2025-12-16 Taiwan Semiconductor Manufacturing Company, Ltd. Dual silicide layers in semiconductor devices
US12300717B2 (en) 2021-08-06 2025-05-13 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of manufacture
US11948843B2 (en) 2021-08-06 2024-04-02 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming hardmask formation by hybrid materials in semiconductor device
US11957070B2 (en) 2021-08-06 2024-04-09 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device, memory cell and method of forming the same
US12119345B2 (en) 2021-08-06 2024-10-15 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method for forming the same
US12349409B2 (en) 2021-08-06 2025-07-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having a gate contact on a low-k liner
US11670590B2 (en) 2021-08-12 2023-06-06 Taiwan Semiconductor Manufacturing Company, Ltd. Chip structure with etch stop layer and method for forming the same
US12170205B2 (en) 2021-08-12 2024-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for fabricating semiconductor structures
US12051732B2 (en) 2021-08-12 2024-07-30 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method for forming the same
US12406938B2 (en) 2021-08-13 2025-09-02 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of forming alignment structure with trenches for semiconductor devices
US12080597B2 (en) 2021-08-13 2024-09-03 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices and methods of manufacture
US12389641B2 (en) 2021-08-13 2025-08-12 Taiwan Semiconductor Manufacturing Co., Ltd. Field effect transistor with air spacer and method
US12107163B2 (en) 2021-08-19 2024-10-01 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure having dislocation stress memorization and methods of forming the same
US12074061B2 (en) 2021-08-19 2024-08-27 Taiwan Semiconductor Manufacturing Co., Ltd. Field effect transistor with multi-metal gate via and method
US11908702B2 (en) * 2021-08-19 2024-02-20 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structures in semiconductor devices
US11581416B1 (en) 2021-08-19 2023-02-14 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structures in semiconductor devices
US11908921B2 (en) 2021-08-26 2024-02-20 Taiwan Semiconductor Manufacturing Co., Ltd. Transistor isolation structures
US12020991B2 (en) 2021-08-26 2024-06-25 Taiwan Semiconductor Manufacturing Co., Ltd. High-k gate dielectric and method forming same
US12362234B2 (en) 2021-08-27 2025-07-15 Taiwan Semiconductor Manufacturing Company, Ltd. Contact structure for semiconductor device
US12237399B2 (en) 2021-08-27 2025-02-25 Taiwan Semiconductor Manufacturing Co., Ltd. Nano-FET transistor with alternating nanostructures and method of forming thereof
US12062693B2 (en) 2021-08-27 2024-08-13 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and methods of forming the same
US11855078B2 (en) 2021-08-27 2023-12-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure including forksheet transistors and methods of forming the same
US12002867B2 (en) 2021-08-27 2024-06-04 Taiwan Semiconductor Manufacturing Co., Ltd. Contact structure for semiconductor device
US12381113B2 (en) 2021-08-27 2025-08-05 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure having air gap and methods of forming the same
US12218219B2 (en) 2021-08-27 2025-02-04 Taiwan Semiconductor Manufacturing Co., Ltd. Spacer structure for semiconductor device
US11990511B2 (en) 2021-08-27 2024-05-21 Taiwan Semiconductor Manufacturing Co., Ltd. Source/drain device and method of forming thereof
US12166037B2 (en) 2021-08-27 2024-12-10 Taiwan Semiconductor Manufacturing Company, Ltd. Isolation layers in stacked semiconductor devices
US11901364B2 (en) 2021-08-27 2024-02-13 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and methods of forming the same
US12040384B2 (en) 2021-08-27 2024-07-16 Taiwan Semiconductor Manufacturing Co., Ltd. Source/drain structure for semiconductor device
US12230532B2 (en) 2021-08-27 2025-02-18 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device, method of manufacture by monitoring relative humidity, and system of manufacture thereof
US11804532B2 (en) 2021-08-27 2023-10-31 Taiwan Semiconductor Manufacturing Co., Ltd. Gate-all-around devices with superlattice channel
US11756995B2 (en) 2021-08-27 2023-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming a semiconductor device structure having an isolation layer to isolate a conductive feature and a gate electrode layer
US12363962B2 (en) 2021-08-27 2025-07-15 Taiwan Semiconductor Manufacturing Company, Ltd. Isolation structures of semiconductor devices
US12132000B2 (en) * 2021-08-28 2024-10-29 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and methods of forming the same
US12074060B2 (en) 2021-08-28 2024-08-27 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and methods of forming the same
US11784225B2 (en) 2021-08-30 2023-10-10 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure, method of forming stacked unit layers and method of forming stacked two-dimensional material layers
US11920254B2 (en) 2021-08-30 2024-03-05 Taiwan Semiconductor Manufacturing Co., Ltd. Detection of contact formation between a substrate and contact pins in an electroplating system
US12471344B2 (en) 2021-08-30 2025-11-11 Taiwan Semiconductor Manufacturing Company, Ltd. Dry etching of semiconductor structures with fluorine-containing gases
US12074063B2 (en) 2021-08-30 2024-08-27 Taiwan Semiconductor Manufacturing Company, Ltd. Contact formation method and related structure
US12324216B2 (en) 2021-08-30 2025-06-03 Taiwan Semiconductor Manufacturing Company, Ltd. Metal gates for multi-gate devices and fabrication methods thereof
US12414354B2 (en) 2021-08-30 2025-09-09 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor strutures with dielectric fins
US12513912B2 (en) 2021-08-30 2025-12-30 Taiwan Semiconductor Manufacturing Company, Ltd. Method for fabricating an integrated circuit comprising devices on opposing sides of a substrate
US12094764B2 (en) 2021-08-30 2024-09-17 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structure and methods of forming the same
US11710781B2 (en) 2021-08-30 2023-07-25 Taiwan Semiconductor Manufacturing Co., Ltd. Growth process and methods thereof
US12278276B2 (en) 2021-08-30 2025-04-15 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-channel devices and method with anti-punch through process
US11894276B2 (en) 2021-08-30 2024-02-06 Taiwan Semiconductor Manufacturing Company, Ltd. Multiple gate field-effect transistors having various gate oxide thicknesses and methods of forming the same
US12009259B2 (en) 2021-08-30 2024-06-11 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices including low-k metal gate isolation and methods of fabrication thereof
US11908893B2 (en) 2021-08-30 2024-02-20 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of forming the same
US11688625B2 (en) 2021-08-30 2023-06-27 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing semiconductor device
US12211740B2 (en) 2021-08-30 2025-01-28 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structure and methods of forming the same
US12250803B2 (en) 2021-08-30 2025-03-11 Taiwan Semiconductor Manufactoring Company, Ltd. Device and method for tuning threshold voltage
US12142647B2 (en) 2021-08-30 2024-11-12 Taiwan Semiconductor Manufacturing Company, Ltd. Self-aligning backside contact process and devices thereof
US11901412B2 (en) 2021-08-30 2024-02-13 Taiwan Semiconductor Manufacturing Co., Ltd. Facet-free epitaxial structures for semiconductor devices
US12278145B2 (en) 2021-08-30 2025-04-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices with a source/drain barrier layer and methods of manufacture
US11810824B2 (en) 2021-08-30 2023-11-07 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
US11990524B2 (en) 2021-08-30 2024-05-21 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and forming method thereof
US12439666B2 (en) 2021-08-30 2025-10-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and methods of manufacture
US12300734B2 (en) 2021-08-30 2025-05-13 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having air gap and method of fabricating thereof
US12506078B2 (en) 2021-08-30 2025-12-23 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices with front side to backside conductive paths and methods of fabrication thereof
US12080775B2 (en) 2021-08-30 2024-09-03 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and forming method thereof
US11749570B2 (en) 2021-08-31 2023-09-05 Taiwan Semiconductor Manufacturing Company, Ltd. Etch monitoring and performing
US12002863B2 (en) 2021-08-31 2024-06-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with air-gap spacers
US11942533B2 (en) 2021-08-31 2024-03-26 Taiwan Semiconductor Manufacturing Co., Ltd. Channel structures for semiconductor devices
US12063785B2 (en) 2021-08-31 2024-08-13 Taiwan Semiconductor Manufacturing Company Ltd. Integrated circuit, memory device and method of manufacturing the same
US12051736B2 (en) 2021-08-31 2024-07-30 Taiwan Semiconductor Manufacturing Co., Ltd. Field effect transistor with inner spacer liner layer and method
US11901410B2 (en) 2021-08-31 2024-02-13 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices and methods of manufacture
US12484249B2 (en) 2021-08-31 2025-11-25 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structures in transistors and method of forming same
US12268023B2 (en) 2021-08-31 2025-04-01 Taiwan Semiconductor Manufacturing Company, Ltd. Devices with improved operational current and reduced leakage current
US12176410B2 (en) 2021-08-31 2024-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated logic and passive device structure
US12183779B2 (en) 2021-08-31 2024-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit and method of forming the same
US11948840B2 (en) 2021-08-31 2024-04-02 Taiwan Semiconductor Manufacturing Co., Ltd. Protective layer over FinFET and method of forming same
US12080776B2 (en) 2021-08-31 2024-09-03 Taiwan Semiconductor Manufacturing Co., Ltd. Field effect transistor with fin isolation structure and method
US12414338B2 (en) 2021-10-12 2025-09-09 Taiwan Semiconductor Manufacturing Co., Ltd. Nanostructure FET and method of forming same
US12336226B2 (en) 2021-10-13 2025-06-17 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure including stacked nanostructures
US12261203B2 (en) 2021-10-14 2025-03-25 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure with gate stack and method for forming the same
US12484251B2 (en) 2021-10-14 2025-11-25 Taiwan Semiconductor Manufacturing Company, Ltd Multigate device structure with engineered gate
US12349408B2 (en) 2021-10-15 2025-07-01 Taiwan Semiconductor Manufacturing Co., Ltd. Transistor gate contacts and methods of forming the same
US12288695B2 (en) 2021-10-15 2025-04-29 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming a transistor device having dipole-containing gate dielectric layer and fluorine-containing gate dielectric layer
US12532509B2 (en) 2021-11-03 2026-01-20 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit with backside trench for nanosheet removal
US12300723B2 (en) 2021-11-03 2025-05-13 Taiwan Semiconductor Manufacturing Co., Ltd. Transistor including downward extending silicide
US12527048B2 (en) 2021-11-04 2026-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Isolation structures for semiconductor devices
US12148672B2 (en) 2021-11-04 2024-11-19 Taiwan Semiconductor Manufacturing Co., Ltd. Hybrid fin structure of semiconductor device and method of forming same
US11973124B2 (en) 2021-11-04 2024-04-30 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US12272735B2 (en) 2021-11-04 2025-04-08 Taiwan Semiconductor Manufacturing Co., Ltd. Transistor gate structures and methods of forming the same
US12363964B2 (en) 2021-11-04 2025-07-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having dielectric hybrid fin
US12267992B2 (en) 2021-11-04 2025-04-01 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device having capacitor structure and method of forming the same
US12347726B2 (en) 2021-11-04 2025-07-01 Taiwan Semiconductor Manufacturing Co., Ltd. Interconnect structures and methods of forming the same
US12288783B2 (en) 2021-11-04 2025-04-29 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated standard cell structure
US12317540B2 (en) 2021-11-08 2025-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing semiconductor structure with isolation feature
US12249621B2 (en) 2021-11-08 2025-03-11 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure with dielectric fin feature
US12419072B2 (en) 2021-11-12 2025-09-16 Taiwan Semiconductor Manufacturing Co., Ltd. Transistor source/drain contacts and methods of forming the same
US12513979B2 (en) 2021-11-15 2025-12-30 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device
US12021117B2 (en) 2021-11-17 2024-06-25 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method of forming the same
US12388021B2 (en) 2021-11-22 2025-08-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US12402354B2 (en) 2021-11-22 2025-08-26 Taiwan Semiconductor Manufacturing Company, Ltd. Epitaxial features in semiconductor devices and manufacturing method of the same
US12513962B2 (en) 2021-11-24 2025-12-30 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with flexible sheet structure
US12249539B2 (en) 2021-12-06 2025-03-11 Taiwan Semiconductor Manufacturing Company, Ltd. Multigate device structure with engineered cladding and method making the same
US12211924B2 (en) 2021-12-09 2025-01-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of forming the same
US12191370B2 (en) 2021-12-14 2025-01-07 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with tunable channel layer usage and methods of fabrication thereof
US12362273B2 (en) 2021-12-30 2025-07-15 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive structures and methods of fabrication thereof
US12476133B2 (en) 2022-01-10 2025-11-18 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method for manufacturing the same
US12272600B2 (en) 2022-01-12 2025-04-08 Taiwan Semiconductor Manufacturing Co., Ltd. Contact features of semiconductor device and method of forming same
US12176411B2 (en) 2022-01-12 2024-12-24 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with isolation transistors and back side voltage metal lines
US12495534B2 (en) 2022-01-13 2025-12-09 Taiwan Semiconductor Manufacturing Company, Ltd. Epitaxial features in semiconductor devices and method of forming the same
US12317552B2 (en) 2022-01-20 2025-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and method for forming the same
US12131945B2 (en) 2022-01-21 2024-10-29 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
US12324146B2 (en) 2022-01-26 2025-06-03 Taiwan Semiconductor Manufacturing Co., Ltd. Vertical DRAM structure and method of formation
US12362183B2 (en) 2022-01-27 2025-07-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method for fabricating the same
US12087776B2 (en) 2022-01-27 2024-09-10 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
US12087616B2 (en) 2022-01-27 2024-09-10 Taiwan Semiconductor Manufacturing Company, Ltd. Air gap formation method
US12417945B2 (en) 2022-02-14 2025-09-16 Taiwan Semiconductor Manufacturing Co., Ltd. Contact features of semiconductor device and method of forming same
US12218196B2 (en) 2022-02-14 2025-02-04 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of manufacture
US12080769B2 (en) 2022-02-15 2024-09-03 Taiwan Semiconductor Manufacturing Company, Ltd. Contact structure with silicide and method for forming the same
US12243872B2 (en) 2022-02-15 2025-03-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and methods of forming the same
US12376338B2 (en) 2022-02-16 2025-07-29 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure with dielectric dummy gate and method for forming the same
US12426300B2 (en) 2022-02-17 2025-09-23 Taiwan Semiconductor Manufacturing Co., Ltd. Transistor source/drain contacts and methods of forming the same
US11955384B2 (en) 2022-02-17 2024-04-09 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked semiconductor device with nanostructure channels and manufacturing method thereof
US12495568B2 (en) 2022-02-21 2025-12-09 Taiwan Semiconductor Manufacturing Co., Ltd. Dummy Fin structures and methods of forming same
US12464773B2 (en) 2022-02-22 2025-11-04 Taiwan Semiconductor Manufacturing Company, Ltd. Formation of a semiconductor device with a gate containing a metal oxide layer using an oxidation process
US12218213B2 (en) 2022-02-22 2025-02-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and method for forming the same
US12176390B2 (en) 2022-02-23 2024-12-24 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and method for forming the semiconductor device structure
US12464774B2 (en) 2022-02-23 2025-11-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method for manufacturing the same
US12532518B2 (en) 2022-02-25 2026-01-20 Taiwan Semiconductor Manufacturing Co., Ltd. Transistor source/drain regions and methods of forming the same
US12376339B2 (en) 2022-03-02 2025-07-29 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and method for forming the same
US12431356B2 (en) 2022-03-03 2025-09-30 Taiwan Semiconductor Manufacturing Company, Ltd. Metal gate structure and method of forming the same
US12218218B2 (en) 2022-03-09 2025-02-04 Taiwan Semiconductor Manufacturing Company, Ltd. Nanostructures formed over a substrate and a gate structure wrapping around the nanostructures
US12464789B2 (en) 2022-03-10 2025-11-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and method for forming the semiconductor device structure
US12532510B2 (en) 2022-03-14 2026-01-20 Taiwan Semiconductor Manufacturing Company, Ltd. Profile control of isolation structures in semiconductor devices
US12336249B2 (en) 2022-03-16 2025-06-17 Taiwan Semiconductor Manufacturing Company, Ltd. Gate spacer and formation method thereof
US12199157B2 (en) 2022-03-21 2025-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and methods of forming the same
US12453144B2 (en) 2022-03-21 2025-10-21 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device comprising first etch stop layer over first conductive feature over source/drain region
US12417941B2 (en) * 2022-03-22 2025-09-16 Taiwan Semiconductor Manufacturing Company, Ltd. Isolation structures in semiconductor devices
US12046476B2 (en) 2022-03-25 2024-07-23 Taiwan Semiconductor Manufacturing Company, Ltd. Wet etching chemistry and method of forming semiconductor device using the same
US12402343B2 (en) 2022-03-29 2025-08-26 Taiwan Semiconductor Manufacturing Company, Ltd. Work function tuning in semiconductor devices
US12439648B2 (en) 2022-03-29 2025-10-07 Taiwan Semiconductor Manufacturing Co., Ltd. Transistor gate structures and methods of forming thereof
US12417918B2 (en) 2022-03-29 2025-09-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having doped gate dielectric layer and method for forming the same
US12432954B2 (en) 2022-03-31 2025-09-30 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure with fin and method for forming the same
US12255230B2 (en) 2022-03-31 2025-03-18 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method for forming the same
US12477794B2 (en) 2022-04-01 2025-11-18 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
US12224209B2 (en) 2022-04-08 2025-02-11 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
US12317567B2 (en) 2022-04-11 2025-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and method for forming the same
US12400910B2 (en) 2022-04-12 2025-08-26 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming semiconductor device with monoclinic crystalline metal oxide capping layer
US12543364B2 (en) 2022-04-15 2026-02-03 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit with backside metal gate cut for reduced coupling capacitance
US12406907B2 (en) 2022-04-15 2025-09-02 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure with conductive_structure
US12396234B2 (en) 2022-04-15 2025-08-19 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming semiconductor device structure with a cap layer
US12396239B2 (en) 2022-04-17 2025-08-19 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and methods of forming the same
US12336258B2 (en) 2022-04-25 2025-06-17 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure
US12274068B2 (en) 2022-05-09 2025-04-08 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming ferroelectric memory device
US12310093B2 (en) 2022-05-10 2025-05-20 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
US12356699B2 (en) 2022-05-11 2025-07-08 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming semiconductor device structure with second spacer over second sidewall of fin structure
US12538510B2 (en) 2022-05-11 2026-01-27 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
US12288723B2 (en) 2022-05-11 2025-04-29 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
US12396209B2 (en) 2022-05-12 2025-08-19 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US12278147B2 (en) 2022-05-16 2025-04-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method for forming the same
US12349446B2 (en) 2022-05-16 2025-07-01 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and formation method of semiconductor device with epitaxial structures
US12457796B2 (en) 2022-05-16 2025-10-28 Taiwan Semiconductor Manufacturing Company, Ltd. Manufacturing method of semiconductor device having frontside and backside contacts
US12283610B2 (en) 2022-05-17 2025-04-22 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and formation method of semiconductor device with epitaxial structures
US12336250B2 (en) 2022-05-17 2025-06-17 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and method for forming the semiconductor device structure
US12389662B2 (en) 2022-05-17 2025-08-12 Taiwan Semiconductor Manufacturing Company, Ltd. Formation method of shallow trench isolation
US12477712B2 (en) 2022-05-18 2025-11-18 Taiwan Semiconductor Manufacturing Company, Ltd. Memory structure and method for manufacturing the same
US12356682B2 (en) 2022-05-20 2025-07-08 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure with conductive structure
US12439625B2 (en) 2022-05-23 2025-10-07 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and method for forming the same
US12389634B2 (en) 2022-05-23 2025-08-12 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of fabricating a semiconductor device
US12328917B2 (en) 2022-05-25 2025-06-10 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure having second contact structure over second side of first S/D structure
US12205849B2 (en) 2022-05-25 2025-01-21 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure with source/drain structure and method for forming the same
US12512408B2 (en) 2022-05-26 2025-12-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices including backside power via and methods of forming the same
US12362238B2 (en) 2022-05-26 2025-07-15 Taiwan Semiconductor Manufacturing Company, Ltd. Metal gate process and related structure
US12308292B2 (en) 2022-05-26 2025-05-20 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming semiconductor device structures
US12500142B2 (en) 2022-05-26 2025-12-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices including through vias and methods of forming the same
US12219746B2 (en) 2022-05-27 2025-02-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method for forming the same
US12490506B2 (en) 2022-05-27 2025-12-02 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure with air gap and method for forming the same
US12376322B2 (en) 2022-05-27 2025-07-29 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having thin bottom channel and manufacturing method thereof
US12363924B2 (en) 2022-06-01 2025-07-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods for fabrication thereof
US12349413B2 (en) 2022-06-01 2025-07-01 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with oxide-based semiconductor channel
US12446283B2 (en) 2022-06-02 2025-10-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method for forming the same
US12288812B2 (en) 2022-06-02 2025-04-29 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods of fabrication thereof
US12402372B2 (en) 2022-06-03 2025-08-26 Taiwan Semiconductor Manufacturing Company, Ltd. Insulating structures in semiconductor device
US12354940B2 (en) 2022-06-03 2025-07-08 Taiwan Semiconductor Manufacturing Co., Ltd. Redistribution layer structure with support features and methods
US12477813B2 (en) 2022-06-05 2025-11-18 Taiwan Semiconductor Manufacturing Company, Ltd. Metal gates for multi-gate semiconductor devices and method thereof
US12414330B2 (en) 2022-06-05 2025-09-09 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-gate device including semiconductor fin between dielectric fins and method of fabrication thereof
US12288804B2 (en) 2022-06-05 2025-04-29 Taiwan Semiconductor Manufacturing Company, Ltd. Transistor and manufacturing method of the same
US12439642B2 (en) 2022-06-06 2025-10-07 Taiwan Semiconductor Manufacturing Company, Ltd. Seam-top seal for dielectrics
US12490453B2 (en) 2022-06-06 2025-12-02 Taiwan Semiconductor Manufacturing Company, Ltd. Heterostructure channel layer for semiconductor devices
US12453126B2 (en) 2022-06-06 2025-10-21 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method for forming the same
US12463152B2 (en) 2022-06-06 2025-11-04 Taiwan Semiconductor Manufacturing Company, Ltd Multi-channel device with seal ring structure and method making the same
US12191145B2 (en) 2022-06-07 2025-01-07 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and formation method thereof
US12243918B2 (en) 2022-06-10 2025-03-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with dielectric liners on gate refill metal
US12453127B2 (en) 2022-06-16 2025-10-21 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of manufacturing semiconductor devices and semiconductor devices
US12310063B2 (en) 2022-06-17 2025-05-20 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming semiconductor device with transistors on opposite sides of a dielectric layer
US12484246B2 (en) 2022-06-17 2025-11-25 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing a semiconductor device including forming a sidewall spacer on a sidewall of a channel structure
US12363966B2 (en) 2022-06-24 2025-07-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and method of forming the same
US12349363B2 (en) 2022-06-25 2025-07-01 Taiwan Semiconductor Manufacturing Company, Ltd. Ferroelectric device and methods of forming the same
US12477772B2 (en) 2022-06-26 2025-11-18 Taiwan Semiconductor Manufacturing Company Ltd. Method for forming multi-gate semiconductor structure
US12414362B2 (en) 2022-06-27 2025-09-09 Taiwan Semiconductor Manufacturing Company, Ltd. Fins disposed on stacks of nanostructures where the nanostructures are wrapped around by a gate
US12543352B2 (en) 2022-06-27 2026-02-03 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit with bottom dielectric insulators and fin sidewall spacers for reducing source/drain leakage currents
US12532498B2 (en) 2022-06-28 2026-01-20 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with reverse-cut source/drain contact structure and method thereof
US12419026B2 (en) 2022-06-29 2025-09-16 Taiwan Semiconductor Manufacturing Company, Ltd. Memory structure
US12501671B2 (en) 2022-06-29 2025-12-16 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
US12089391B2 (en) 2022-06-29 2024-09-10 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device
US12484253B2 (en) 2022-07-05 2025-11-25 Taiwan Semiconductor Manufacturing Company, Ltd. Metal features of a semiconductor device and methods for forming the same
US12414355B2 (en) 2022-07-07 2025-09-09 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
US12464804B2 (en) 2022-07-08 2025-11-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method for forming the same
US12334350B2 (en) 2022-07-10 2025-06-17 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacture
US12489063B2 (en) 2022-07-13 2025-12-02 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
US12408406B2 (en) 2022-07-13 2025-09-02 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
US12349447B2 (en) 2022-07-14 2025-07-01 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and formation method of semiconductor device with dielectric fin
US12389618B2 (en) 2022-07-20 2025-08-12 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor transistor device includes backside via electrically connecting epitaxial source/drain structures and method for forming the same
US12506079B2 (en) 2022-07-21 2025-12-23 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with backside power rail and methods of fabrication thereof
US12382622B2 (en) 2022-07-27 2025-08-05 Taiwan Semiconductor Manufacturing Company, Ltd. Memory structure
US12532445B2 (en) 2022-07-28 2026-01-20 Taiwan Semiconductor Manufacturing Company, Ltd. Manufacturing method of semiconductor structure including static random access memory cell
US12408394B2 (en) 2022-07-28 2025-09-02 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and method for forming the same
US12363992B2 (en) 2022-07-28 2025-07-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
US12520566B2 (en) 2022-07-28 2026-01-06 Taiwan Semiconductor Manufacturing Company, Ltd. Contact structure and manufacturing method thereof
US12471352B2 (en) 2022-08-02 2025-11-11 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of fabricating the same
US12376347B2 (en) 2022-08-12 2025-07-29 Taiwan Semiconductor Manufacturing Company, Ltd. Ferroelectric memory device and method of forming the same
US12376354B2 (en) 2022-08-12 2025-07-29 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor and method for manufacturing the same
US12464750B2 (en) 2022-08-12 2025-11-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and formation method thereof
US12300719B2 (en) 2022-08-12 2025-05-13 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and formation method of semiconductor device with isolation structure
US12520565B2 (en) 2022-08-17 2026-01-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method for forming the same
US12389635B2 (en) 2022-08-17 2025-08-12 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
US12520559B2 (en) 2022-08-18 2026-01-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device
US12347748B2 (en) 2022-08-19 2025-07-01 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacturing the same
US12532533B2 (en) 2022-08-26 2026-01-20 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming semiconductor structure
US12471316B2 (en) 2022-08-28 2025-11-11 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
US12419103B2 (en) 2022-08-31 2025-09-16 Taiwan Semiconductor Manufacturing Co., Ltd. Dielectric walls for complementary field effect transistors
US12414305B2 (en) 2022-09-01 2025-09-09 Taiwan Semiconductor Manufacturing Company, Ltd. Transistor, memory device and manufacturing method of memory device
US12453133B2 (en) 2022-09-01 2025-10-21 Taiwan Semiconductor Manufacturing Company, Ltd. Transistor structure and method of forming the same
US12419104B2 (en) 2022-09-13 2025-09-16 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of forming the same
US12361985B2 (en) 2022-09-16 2025-07-15 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device
US12490467B2 (en) 2022-09-19 2025-12-02 Taiwan Semiconductor Manufacturing Company, Ltd. Transistor and semiconductor device with multiple threshold voltages and fabrication method thereof
US12446271B2 (en) 2022-09-27 2025-10-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and methods of forming the same
US12451392B2 (en) 2022-09-27 2025-10-21 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for seam repair and semiconductor structure manufactured thereof
US12283311B2 (en) 2022-09-28 2025-04-22 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device and method for forming the same
US12394706B2 (en) 2022-10-05 2025-08-19 Taiwan Semiconductor Manufacturing Co., Ltd. Device with gate-to-drain via and related methods
US12520574B2 (en) 2022-10-09 2026-01-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure including forksheet transistors and methods of forming the same
US12412831B2 (en) * 2022-10-09 2025-09-09 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and methods of forming the same
US12532532B2 (en) 2022-11-03 2026-01-20 Taiwan Semiconductor Manufacturing Company, Ltd. Epitaxial features in semiconductor devices and method of manufacturing
US12527081B2 (en) 2022-11-24 2026-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and logic device
US12475942B2 (en) 2022-12-01 2025-11-18 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit structure with complementary field effect transistor and memory cell and method of making thereof
US12543556B2 (en) 2022-12-08 2026-02-03 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods of forming the same
US12414282B2 (en) 2023-01-03 2025-09-09 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device
US12507439B2 (en) 2023-01-31 2025-12-23 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming semiconductor structure
US12538533B2 (en) 2023-02-03 2026-01-27 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and method for forming the same
US12532511B2 (en) 2023-03-01 2026-01-20 Taiwan Semiconductor Manufacturing Company, Ltd. Barrier layers in semiconductor devices
US12532492B2 (en) 2023-04-18 2026-01-20 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and formation method of semiconductor device with epitaxial structures
US12520471B2 (en) 2023-05-10 2026-01-06 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device
US12520562B2 (en) 2023-05-22 2026-01-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with germanium-based channel
US12538547B2 (en) 2023-05-31 2026-01-27 Taiwan Semiconductor Manufacturing Company, Ltd. Fin jog structure and methods of making same
US12507450B2 (en) 2023-06-08 2025-12-23 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and method for forming the same
US12527065B2 (en) 2023-06-28 2026-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method for forming the same
US12538534B2 (en) * 2023-07-03 2026-01-27 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure
US20250169091A1 (en) 2023-11-21 2025-05-22 Taiwan Semiconductor Manufacturing Company, Ltd. Radical Treatment in Supercritical Fluid for Gate Dielectric Quality Improvement to CFET Structure

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7667271B2 (en) 2007-04-27 2010-02-23 Taiwan Semiconductor Manufacturing Company, Ltd. Fin field-effect transistors
US7910453B2 (en) 2008-07-14 2011-03-22 Taiwan Semiconductor Manufacturing Company, Ltd. Storage nitride encapsulation for non-planar sonos NAND flash charge retention
US8310013B2 (en) 2010-02-11 2012-11-13 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating a FinFET device
US8399931B2 (en) 2010-06-30 2013-03-19 Taiwan Semiconductor Manufacturing Company, Ltd. Layout for multiple-fin SRAM cell
US8729627B2 (en) 2010-05-14 2014-05-20 Taiwan Semiconductor Manufacturing Company, Ltd. Strained channel integrated circuit devices
US8816444B2 (en) 2011-04-29 2014-08-26 Taiwan Semiconductor Manufacturing Company, Ltd. System and methods for converting planar design to FinFET design
US8466027B2 (en) 2011-09-08 2013-06-18 Taiwan Semiconductor Manufacturing Company, Ltd. Silicide formation and associated devices
US8723272B2 (en) 2011-10-04 2014-05-13 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET device and method of manufacturing same
US8377779B1 (en) 2012-01-03 2013-02-19 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of manufacturing semiconductor devices and transistors
US8735993B2 (en) 2012-01-31 2014-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET body contact and method of making same
US8785285B2 (en) 2012-03-08 2014-07-22 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods of manufacture thereof
US8716765B2 (en) 2012-03-23 2014-05-06 Taiwan Semiconductor Manufacturing Company, Ltd. Contact structure of semiconductor device
US8860148B2 (en) 2012-04-11 2014-10-14 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for FinFET integrated with capacitor
US8736056B2 (en) 2012-07-31 2014-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Device for reducing contact resistance of a metal
US8823065B2 (en) 2012-11-08 2014-09-02 Taiwan Semiconductor Manufacturing Company, Ltd. Contact structure of semiconductor device
US8772109B2 (en) 2012-10-24 2014-07-08 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for forming semiconductor contacts
US9236300B2 (en) 2012-11-30 2016-01-12 Taiwan Semiconductor Manufacturing Company, Ltd. Contact plugs in SRAM cells and the method of forming the same
US9551923B2 (en) * 2014-04-08 2017-01-24 Taiwan Semiconductor Manufacturing Co., Ltd. Cut mask design layers to provide compact cell height
KR102217246B1 (ko) * 2014-11-12 2021-02-18 삼성전자주식회사 집적회로 소자 및 그 제조 방법

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109216354A (zh) * 2017-06-29 2019-01-15 台湾积体电路制造股份有限公司 金属栅极结构切割工艺
CN109216354B (zh) * 2017-06-29 2021-04-06 台湾积体电路制造股份有限公司 金属栅极结构切割工艺
US11056478B2 (en) 2017-06-29 2021-07-06 Taiwan Semiconductor Manufacturing Co., Ltd. Metal gate structure cutting process
US11810909B2 (en) 2017-06-29 2023-11-07 Taiwan Semiconductor Manufacturing Co., Ltd. Metal gate structure cutting process
CN110892523A (zh) * 2017-07-20 2020-03-17 国际商业机器公司 形成自对准触点
CN109427777A (zh) * 2017-08-30 2019-03-05 台湾积体电路制造股份有限公司 具有倾斜侧壁的切割金属栅极
US11616061B2 (en) 2017-08-30 2023-03-28 Taiwan Semiconductor Manufacturing Co., Ltd. Cut metal gate with slanted sidewalls
CN109786463A (zh) * 2017-11-15 2019-05-21 台湾积体电路制造股份有限公司 金属栅极结构及其制造方法
CN109786463B (zh) * 2017-11-15 2022-03-04 台湾积体电路制造股份有限公司 金属栅极结构及其制造方法
CN110197828A (zh) * 2018-02-26 2019-09-03 台湾积体电路制造股份有限公司 半导体器件及其形成方法
CN110197828B (zh) * 2018-02-26 2021-08-24 台湾积体电路制造股份有限公司 半导体器件及其形成方法
CN110890276A (zh) * 2018-09-11 2020-03-17 Imec 非营利协会 栅极、触点和翅片切割方法

Also Published As

Publication number Publication date
TW201727833A (zh) 2017-08-01
TWI710062B (zh) 2020-11-11
US9520482B1 (en) 2016-12-13

Similar Documents

Publication Publication Date Title
TWI710062B (zh) 切割金屬閘極之方法
US11670717B2 (en) Structure of S/D contact and method of making same
US9620633B2 (en) Quantum well fin-like field effect transistor (QWFinFET) having a two-section combo QW structure
TWI668758B (zh) 半導體裝置及其製造方法
US10164051B2 (en) Method of cutting metal gate
TW202209575A (zh) 半導體裝置及其形成方法
CN105428394B (zh) 鳍部件的结构及其制造方法
CN106469684B (zh) 半导体装置及其形成方法
US10679856B2 (en) Fin field effect transistor (FinFET) device structure with insulating structure over fin isolation structure and method for forming the same
TW202205389A (zh) 半導體裝置及其形成方法
TWI555067B (zh) 積體電路裝置及其製造方法
CN110459542A (zh) 半导体装置结构及其形成方法
TW201727899A (zh) 半導體裝置的製造方法
US20220102204A1 (en) Integrated circuit structure and manufacturing method thereof
TW201913749A (zh) 半導體裝置及其形成方法
US20190148519A1 (en) Semiconductor structure and method for forming the same
US11967526B2 (en) Integrated circuit structure and manufacturing method thereof
CN115394722A (zh) 半导体结构及其形成方法
CN112018113A (zh) 半导体装置及其形成方法
TWI892542B (zh) 半導體裝置結構和其形成方法
TWI910421B (zh) 半導體結構及其製造方法
KR20220167197A (ko) 반도체 디바이스 구조체 및 이를 형성하기 위한 방법

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
WD01 Invention patent application deemed withdrawn after publication
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20170524