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BR8203630A - Dispositivo semicondutor processo de preparacao de uma pluralidade de dispositivos semicondutores apassivados com vidro - Google Patents

Dispositivo semicondutor processo de preparacao de uma pluralidade de dispositivos semicondutores apassivados com vidro

Info

Publication number
BR8203630A
BR8203630A BR8203630A BR8203630A BR8203630A BR 8203630 A BR8203630 A BR 8203630A BR 8203630 A BR8203630 A BR 8203630A BR 8203630 A BR8203630 A BR 8203630A BR 8203630 A BR8203630 A BR 8203630A
Authority
BR
Brazil
Prior art keywords
preparing
glass
device process
semiconductor device
semiconductor devices
Prior art date
Application number
BR8203630A
Other languages
English (en)
Inventor
John Anthony Ostop
Robert William Marks
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of BR8203630A publication Critical patent/BR8203630A/pt

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H10W74/01—
    • H10W74/134—
    • H10W74/43—
BR8203630A 1981-06-29 1982-06-22 Dispositivo semicondutor processo de preparacao de uma pluralidade de dispositivos semicondutores apassivados com vidro BR8203630A (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US27851981A 1981-06-29 1981-06-29

Publications (1)

Publication Number Publication Date
BR8203630A true BR8203630A (pt) 1983-06-14

Family

ID=23065290

Family Applications (1)

Application Number Title Priority Date Filing Date
BR8203630A BR8203630A (pt) 1981-06-29 1982-06-22 Dispositivo semicondutor processo de preparacao de uma pluralidade de dispositivos semicondutores apassivados com vidro

Country Status (5)

Country Link
JP (1) JPS589327A (pt)
BE (1) BE893700A (pt)
BR (1) BR8203630A (pt)
DE (1) DE3224248A1 (pt)
FR (1) FR2508706A1 (pt)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3542166A1 (de) * 1985-11-29 1987-06-04 Telefunken Electronic Gmbh Halbleiterbauelement
FR2631488B1 (fr) * 1988-05-10 1990-07-27 Thomson Hybrides Microondes Circuit integre hyperfrequence de type planar, comportant au moins un composant mesa, et son procede de fabrication
DE4114660C2 (de) * 1991-05-06 1997-09-18 Telefunken Microelectron Verfahren zur Herstellung glaspassivierter Halbleiterbauelemente
JP7369158B2 (ja) * 2021-03-31 2023-10-25 三菱重工業株式会社 アンモニア燃料ボイラ、及び、アンモニア供給システム

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1499845A (en) * 1975-03-26 1978-02-01 Mullard Ltd Thyristors
DE2633324C2 (de) * 1976-07-24 1983-09-15 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Verfahren zum Herstellen von Halbleiterbauelementen hoher Sperrspannungsbelastbarkeit
IN154896B (pt) * 1980-07-10 1984-12-22 Westinghouse Electric Corp

Also Published As

Publication number Publication date
JPS589327A (ja) 1983-01-19
FR2508706A1 (fr) 1982-12-31
DE3224248A1 (de) 1983-01-13
BE893700A (fr) 1982-12-29

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