BR8104309A - Processo para fabricar um dispositivo semicondutor apassivado a vidro e dispositivo semicondutor - Google Patents
Processo para fabricar um dispositivo semicondutor apassivado a vidro e dispositivo semicondutorInfo
- Publication number
- BR8104309A BR8104309A BR8104309A BR8104309A BR8104309A BR 8104309 A BR8104309 A BR 8104309A BR 8104309 A BR8104309 A BR 8104309A BR 8104309 A BR8104309 A BR 8104309A BR 8104309 A BR8104309 A BR 8104309A
- Authority
- BR
- Brazil
- Prior art keywords
- semiconductor device
- apassivated
- glass
- manufacturing
- semiconductor
- Prior art date
Links
Classifications
-
- H10W74/43—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/117—Shapes of semiconductor bodies
-
- H10W74/01—
-
- H10W74/134—
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16881880A | 1980-07-10 | 1980-07-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BR8104309A true BR8104309A (pt) | 1982-03-23 |
Family
ID=22613059
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BR8104309A BR8104309A (pt) | 1980-07-10 | 1981-07-07 | Processo para fabricar um dispositivo semicondutor apassivado a vidro e dispositivo semicondutor |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP0044048A1 (pt) |
| JP (1) | JPS5748240A (pt) |
| BR (1) | BR8104309A (pt) |
| CA (1) | CA1177975A (pt) |
| IN (1) | IN154896B (pt) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BR8203630A (pt) * | 1981-06-29 | 1983-06-14 | Westinghouse Electric Corp | Dispositivo semicondutor processo de preparacao de uma pluralidade de dispositivos semicondutores apassivados com vidro |
| DE3247938A1 (de) * | 1982-12-24 | 1984-07-05 | SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg | Halbleiterbauelement hoher sperrspannungsbelastbarkeit |
| US5739048A (en) * | 1994-05-23 | 1998-04-14 | International Business Machines Corporation | Method for forming rows of partially separated thin film elements |
| CN102263167B (zh) * | 2011-08-15 | 2013-04-17 | 英利能源（中国）有限公司 | 单晶硅太阳电池的边沿钝化方法、单晶硅太阳电池及其制备方法和光伏组件 |
| JP6190740B2 (ja) * | 2014-03-11 | 2017-08-30 | 新電元工業株式会社 | 半導体装置及び半導体装置の製造方法 |
| DE102016124670B4 (de) * | 2016-12-16 | 2020-01-23 | Semikron Elektronik Gmbh & Co. Kg | Thyristor mit einem Halbleiterkörper |
| JP7456220B2 (ja) | 2020-03-19 | 2024-03-27 | Tdk株式会社 | ショットキーバリアダイオード |
| CN113517205A (zh) * | 2020-04-27 | 2021-10-19 | 台湾积体电路制造股份有限公司 | 半导体器件及其形成方法 |
| US11699663B2 (en) | 2020-04-27 | 2023-07-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Passivation scheme design for wafer singulation |
| CN113299567B (zh) * | 2021-05-24 | 2024-02-02 | 捷捷半导体有限公司 | 一种钝化层制作方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3632434A (en) * | 1969-01-21 | 1972-01-04 | Jerald L Hutson | Process for glass passivating silicon semiconductor junctions |
| US3628107A (en) * | 1969-05-05 | 1971-12-14 | Gen Electric | Passivated semiconductor device with peripheral protective junction |
| US3608186A (en) * | 1969-10-30 | 1971-09-28 | Jearld L Hutson | Semiconductor device manufacture with junction passivation |
| US3755720A (en) * | 1972-09-25 | 1973-08-28 | Rca Corp | Glass encapsulated semiconductor device |
| DE2739762C2 (de) * | 1977-09-03 | 1982-12-02 | SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg | Verfahren zur Passivierung von Halbleiterkörpern |
| US4235645A (en) * | 1978-12-15 | 1980-11-25 | Westinghouse Electric Corp. | Process for forming glass-sealed multichip semiconductor devices |
-
1981
- 1981-06-25 IN IN685/CAL/81A patent/IN154896B/en unknown
- 1981-07-07 BR BR8104309A patent/BR8104309A/pt unknown
- 1981-07-09 EP EP81105364A patent/EP0044048A1/en not_active Withdrawn
- 1981-07-09 CA CA000381463A patent/CA1177975A/en not_active Expired
- 1981-07-09 JP JP56106304A patent/JPS5748240A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5748240A (en) | 1982-03-19 |
| IN154896B (pt) | 1984-12-22 |
| EP0044048A1 (en) | 1982-01-20 |
| CA1177975A (en) | 1984-11-13 |
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