[go: up one dir, main page]

BE893700A - Dispositifs a semi-conducteurs pour fortes puissances, passives avec du verre - Google Patents

Dispositifs a semi-conducteurs pour fortes puissances, passives avec du verre

Info

Publication number
BE893700A
BE893700A BE0/208492A BE208492A BE893700A BE 893700 A BE893700 A BE 893700A BE 0/208492 A BE0/208492 A BE 0/208492A BE 208492 A BE208492 A BE 208492A BE 893700 A BE893700 A BE 893700A
Authority
BE
Belgium
Prior art keywords
passive
glass
semiconductor devices
high power
semiconductor
Prior art date
Application number
BE0/208492A
Other languages
English (en)
Inventor
J A Ostop
R W Marks
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of BE893700A publication Critical patent/BE893700A/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H10W74/01—
    • H10W74/134—
    • H10W74/43—
BE0/208492A 1981-06-29 1982-06-29 Dispositifs a semi-conducteurs pour fortes puissances, passives avec du verre BE893700A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US27851981A 1981-06-29 1981-06-29

Publications (1)

Publication Number Publication Date
BE893700A true BE893700A (fr) 1982-12-29

Family

ID=23065290

Family Applications (1)

Application Number Title Priority Date Filing Date
BE0/208492A BE893700A (fr) 1981-06-29 1982-06-29 Dispositifs a semi-conducteurs pour fortes puissances, passives avec du verre

Country Status (5)

Country Link
JP (1) JPS589327A (fr)
BE (1) BE893700A (fr)
BR (1) BR8203630A (fr)
DE (1) DE3224248A1 (fr)
FR (1) FR2508706A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3542166A1 (de) * 1985-11-29 1987-06-04 Telefunken Electronic Gmbh Halbleiterbauelement
FR2631488B1 (fr) * 1988-05-10 1990-07-27 Thomson Hybrides Microondes Circuit integre hyperfrequence de type planar, comportant au moins un composant mesa, et son procede de fabrication
DE4114660C2 (de) * 1991-05-06 1997-09-18 Telefunken Microelectron Verfahren zur Herstellung glaspassivierter Halbleiterbauelemente
JP7369158B2 (ja) * 2021-03-31 2023-10-25 三菱重工業株式会社 アンモニア燃料ボイラ、及び、アンモニア供給システム

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1499845A (en) * 1975-03-26 1978-02-01 Mullard Ltd Thyristors
DE2633324C2 (de) * 1976-07-24 1983-09-15 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Verfahren zum Herstellen von Halbleiterbauelementen hoher Sperrspannungsbelastbarkeit
IN154896B (fr) * 1980-07-10 1984-12-22 Westinghouse Electric Corp

Also Published As

Publication number Publication date
DE3224248A1 (de) 1983-01-13
JPS589327A (ja) 1983-01-19
BR8203630A (pt) 1983-06-14
FR2508706A1 (fr) 1982-12-31

Similar Documents

Publication Publication Date Title
SE8107651L (sv) Forfarande for tillverkning av en halvledaranordning
BE848345A (fr) Procede de fabrication d'un dispositif a semi-conducteurs,
FR2524709B1 (fr) Dispositif a semi-conducteur et procede pour sa fabrication
IT7927193A0 (it) Metodo di fabbricazione di un sistema di cablaggio, sistema di cablaggio fabbricato in accordo con tale metodo e dispositivo semiconduttore dotato di tale sistema di cablaggio.
IE811040L (en) Manufacturing a semiconductor device
SE8105257L (sv) Halvledaranordning
IT7823833A0 (it) Processo di fabbricazione di dispositivi semiconduttori.
ES506354A0 (es) Procedimiento de fabricacion de dispositivos de circuitos integrados a gran escala
DE3479943D1 (de) A masterslice semiconductor device
NL186665C (nl) Halfgeleiderinrichting.
BE781643A (fr) Procede de fabrication d'un contact intermetallique sur un dispositif semiconducteur
IT1044487B (it) Procedimento per deposizione selettiva di vetro su dispositivi semiconduttori
IT8322981A0 (it) Procedimento per la fabbricazione di un dispositivo a semiconduttori.
DE3175081D1 (en) Method of manufacturing a semiconductor device of the mis type
IT1178706B (it) Dispositivo per incapsulare bottiglie con un fustellato
IT8220100A0 (it) Dispositivi che contengono tale procedimento per la produzione di semiconduttore. un semiconduttore amorfo e
IT7949289A0 (it) Perfezionamento negli apparecchi di allineamento in particolare per laproduzione di dispositivi a semiconduttore
DE3276887D1 (en) Process for fabricating a semiconductor device having a phosphosilicate glass layer
BR7705750A (pt) Processo de fabricacao de um dispositivo semicondutor e dispositivo semicondutor fabricado pelo processo
IT8323707A0 (it) Substrato di cablaggio, procedimento per la sua fabbricazione, e dispositivo a semiconduttore utilizzante il substrato stesso.
IT1135846B (it) Dispositivo a semi-conduttore provvisto di transistor laterale
FR2351065A1 (fr) Verre pour la passivation de dispositifs semiconducteurs
BE893700A (fr) Dispositifs a semi-conducteurs pour fortes puissances, passives avec du verre
IT8219677A0 (it) Dispositivo a semiconduttori.
FR2499325B1 (fr) Circuit de protection pour dispositifs a circuits integres

Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: WESTINGHOUSE ELECTRIC CORP.

Effective date: 19840629