AU2013267481A1 - Structures and methods of formation of contiguous and non-contiguous base regions for high efficiency back-contact solar cells - Google Patents
Structures and methods of formation of contiguous and non-contiguous base regions for high efficiency back-contact solar cells Download PDFInfo
- Publication number
- AU2013267481A1 AU2013267481A1 AU2013267481A AU2013267481A AU2013267481A1 AU 2013267481 A1 AU2013267481 A1 AU 2013267481A1 AU 2013267481 A AU2013267481 A AU 2013267481A AU 2013267481 A AU2013267481 A AU 2013267481A AU 2013267481 A1 AU2013267481 A1 AU 2013267481A1
- Authority
- AU
- Australia
- Prior art keywords
- solar cell
- layer
- base
- emitter
- patterned
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000000034 method Methods 0.000 title claims abstract description 95
- 230000015572 biosynthetic process Effects 0.000 title description 15
- 238000001465 metallisation Methods 0.000 claims abstract description 94
- 239000004065 semiconductor Substances 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 239000012212 insulator Substances 0.000 claims abstract description 7
- 230000008569 process Effects 0.000 claims description 40
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 239000000615 nonconductor Substances 0.000 claims description 11
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 7
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 claims description 4
- 239000005388 borosilicate glass Substances 0.000 claims 6
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- 229910052710 silicon Inorganic materials 0.000 description 52
- 239000010703 silicon Substances 0.000 description 52
- 229910052751 metal Inorganic materials 0.000 description 50
- 239000002184 metal Substances 0.000 description 50
- 238000013461 design Methods 0.000 description 45
- 239000000463 material Substances 0.000 description 29
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- 239000010408 film Substances 0.000 description 12
- 238000002161 passivation Methods 0.000 description 12
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- 229910021419 crystalline silicon Inorganic materials 0.000 description 11
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 8
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- 238000005240 physical vapour deposition Methods 0.000 description 6
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
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- 239000003989 dielectric material Substances 0.000 description 3
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- 230000008570 general process Effects 0.000 description 3
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- 230000003287 optical effect Effects 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 230000002787 reinforcement Effects 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
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- 238000001039 wet etching Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910000676 Si alloy Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000007017 scission Effects 0.000 description 2
- GCAXGCSCRRVVLF-UHFFFAOYSA-N 3,3,4,4-tetrachlorothiolane 1,1-dioxide Chemical compound ClC1(Cl)CS(=O)(=O)CC1(Cl)Cl GCAXGCSCRRVVLF-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000011712 cell development Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
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- 238000005859 coupling reaction Methods 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
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- 238000005137 deposition process Methods 0.000 description 1
- 239000002355 dual-layer Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
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- 238000007429 general method Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
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- 239000011261 inert gas Substances 0.000 description 1
- 239000000976 ink Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000879 optical micrograph Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
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- 238000005057 refrigeration Methods 0.000 description 1
- 239000012779 reinforcing material Substances 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
- 238000009756 wet lay-up Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
- H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
- H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AU2016200610A AU2016200610B2 (en) | 2012-05-29 | 2016-02-01 | Structures and methods of formation of contiguous and non-contiguous base regions for high efficiency back-contact solar cells |
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261652833P | 2012-05-29 | 2012-05-29 | |
| US61/652,833 | 2012-05-29 | ||
| US201361816830P | 2013-04-29 | 2013-04-29 | |
| US61/816,830 | 2013-04-29 | ||
| US201361827252P | 2013-05-24 | 2013-05-24 | |
| US61/827,252 | 2013-05-24 | ||
| PCT/US2013/043193 WO2013181298A1 (fr) | 2012-05-29 | 2013-05-29 | Structures et procédés de formation de régions de base contiguës et non contiguës pour des cellules solaires à contact arrière et haute efficacité |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2016200610A Division AU2016200610B2 (en) | 2012-05-29 | 2016-02-01 | Structures and methods of formation of contiguous and non-contiguous base regions for high efficiency back-contact solar cells |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU2013267481A1 true AU2013267481A1 (en) | 2015-01-22 |
Family
ID=49673880
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2013267481A Abandoned AU2013267481A1 (en) | 2012-05-29 | 2013-05-29 | Structures and methods of formation of contiguous and non-contiguous base regions for high efficiency back-contact solar cells |
| AU2016200610A Expired - Fee Related AU2016200610B2 (en) | 2012-05-29 | 2016-02-01 | Structures and methods of formation of contiguous and non-contiguous base regions for high efficiency back-contact solar cells |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2016200610A Expired - Fee Related AU2016200610B2 (en) | 2012-05-29 | 2016-02-01 | Structures and methods of formation of contiguous and non-contiguous base regions for high efficiency back-contact solar cells |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP2856512A4 (fr) |
| JP (1) | JP2015528196A (fr) |
| KR (1) | KR101528447B1 (fr) |
| CN (1) | CN104737302A (fr) |
| AU (2) | AU2013267481A1 (fr) |
| MY (1) | MY184055A (fr) |
| WO (1) | WO2013181298A1 (fr) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105322032A (zh) * | 2014-07-30 | 2016-02-10 | 英稳达科技股份有限公司 | 太阳能电池 |
| WO2017008120A1 (fr) * | 2015-07-14 | 2017-01-19 | Newsouth Innovations Pty Limited | Procédé de formation d'une structure de contact sur une cellule solaire à contact arrière |
| KR102600379B1 (ko) * | 2015-12-21 | 2023-11-10 | 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 | 태양 전지와 그 제조 방법 |
| US11226257B2 (en) | 2017-02-20 | 2022-01-18 | Fujikin Inc. | Anomaly detection device for fluid controller, anomaly detection system, anamoly detection method, and fluid controller |
| WO2019017281A1 (fr) * | 2017-07-18 | 2019-01-24 | シャープ株式会社 | Dispositif de conversion photoélectrique |
| EP3624204B1 (fr) * | 2018-09-13 | 2023-04-26 | IMEC vzw | Dépôt sélectif pour des motifs interdigités dans des cellules solaires |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6337283B1 (en) * | 1999-12-30 | 2002-01-08 | Sunpower Corporation | Method of fabricating a silicon solar cell |
| JP2005310830A (ja) * | 2004-04-16 | 2005-11-04 | Sharp Corp | 太陽電池および太陽電池の製造方法 |
| DE102004050269A1 (de) * | 2004-10-14 | 2006-04-20 | Institut Für Solarenergieforschung Gmbh | Verfahren zur Kontakttrennung elektrisch leitfähiger Schichten auf rückkontaktierten Solarzellen und Solarzelle |
| US9508886B2 (en) * | 2007-10-06 | 2016-11-29 | Solexel, Inc. | Method for making a crystalline silicon solar cell substrate utilizing flat top laser beam |
| US20080216887A1 (en) * | 2006-12-22 | 2008-09-11 | Advent Solar, Inc. | Interconnect Technologies for Back Contact Solar Cells and Modules |
| JP2010521824A (ja) * | 2007-03-16 | 2010-06-24 | ビーピー・コーポレーション・ノース・アメリカ・インコーポレーテッド | 太陽電池 |
| DE102007059486A1 (de) * | 2007-12-11 | 2009-06-18 | Institut Für Solarenergieforschung Gmbh | Rückkontaktsolarzelle mit länglichen, ineinander verschachtelten Emitter- und Basisbereichen an der Rückseite und Herstellungsverfahren hierfür |
| US20090217963A1 (en) * | 2008-02-29 | 2009-09-03 | Motorola, Inc. | Photovoltaic apparatus for charging a portable electronic device and method for making |
| US20090301559A1 (en) * | 2008-05-13 | 2009-12-10 | Georgia Tech Research Corporation | Solar cell having a high quality rear surface spin-on dielectric layer |
| US8207444B2 (en) * | 2008-07-01 | 2012-06-26 | Sunpower Corporation | Front contact solar cell with formed electrically conducting layers on the front side and backside |
| CN102132422A (zh) * | 2008-08-27 | 2011-07-20 | 应用材料股份有限公司 | 利用印刷介电阻障的背接触太阳能电池 |
| DE102009003467A1 (de) * | 2009-02-11 | 2010-08-19 | Q-Cells Se | Rückseitenkontaktierte Solarzelle |
| AU2010229103A1 (en) * | 2009-03-26 | 2011-11-03 | Bp Corporation North America Inc. | Apparatus and method for solar cells with laser fired contacts in thermally diffused doped regions |
| KR101153377B1 (ko) * | 2009-08-24 | 2012-06-07 | 주식회사 효성 | 개선된 후면구조를 구비한 후면접합 태양전지 및 그 제조방법 |
| JP2011061020A (ja) * | 2009-09-10 | 2011-03-24 | Sharp Corp | 裏面コンタクト型太陽電池素子およびその製造方法 |
| EP2510551B1 (fr) * | 2009-12-09 | 2017-08-02 | Solexel, Inc. | Procédé de fabrication de cellules solaires à jonction arrière et contacts arrières |
| EP2395554A3 (fr) * | 2010-06-14 | 2015-03-11 | Imec | Procédé de fabrication pour cellules photovoltaïques à contact arrière interdigité |
| KR20140015247A (ko) * | 2010-08-05 | 2014-02-06 | 솔렉셀, 인크. | 태양전지용 백플레인 보강 및 상호연결부 |
| KR20120021859A (ko) * | 2010-08-19 | 2012-03-09 | 현대중공업 주식회사 | 태양전지의 후면전극 제조 방법 |
| TWI420700B (zh) * | 2010-12-29 | 2013-12-21 | Au Optronics Corp | 太陽能電池 |
-
2013
- 2013-05-29 WO PCT/US2013/043193 patent/WO2013181298A1/fr not_active Ceased
- 2013-05-29 AU AU2013267481A patent/AU2013267481A1/en not_active Abandoned
- 2013-05-29 EP EP13798110.6A patent/EP2856512A4/fr not_active Withdrawn
- 2013-05-29 MY MYPI2014703566A patent/MY184055A/en unknown
- 2013-05-29 KR KR1020147036595A patent/KR101528447B1/ko not_active Expired - Fee Related
- 2013-05-29 JP JP2015515163A patent/JP2015528196A/ja active Pending
- 2013-05-29 CN CN201380040222.XA patent/CN104737302A/zh active Pending
-
2016
- 2016-02-01 AU AU2016200610A patent/AU2016200610B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| AU2016200610A1 (en) | 2016-02-25 |
| KR101528447B1 (ko) | 2015-06-11 |
| CN104737302A (zh) | 2015-06-24 |
| KR20150028782A (ko) | 2015-03-16 |
| MY184055A (en) | 2021-03-17 |
| EP2856512A4 (fr) | 2015-12-16 |
| AU2016200610B2 (en) | 2017-12-07 |
| JP2015528196A (ja) | 2015-09-24 |
| WO2013181298A1 (fr) | 2013-12-05 |
| EP2856512A1 (fr) | 2015-04-08 |
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