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MY184055A - Structures and methods of formation of contiguous and non-contiguous base regions for high efficiency back-contact solar cells - Google Patents

Structures and methods of formation of contiguous and non-contiguous base regions for high efficiency back-contact solar cells

Info

Publication number
MY184055A
MY184055A MYPI2014703566A MYPI2014703566A MY184055A MY 184055 A MY184055 A MY 184055A MY PI2014703566 A MYPI2014703566 A MY PI2014703566A MY PI2014703566 A MYPI2014703566 A MY PI2014703566A MY 184055 A MY184055 A MY 184055A
Authority
MY
Malaysia
Prior art keywords
base regions
emitter
contiguous
metallization
patterned
Prior art date
Application number
MYPI2014703566A
Other languages
English (en)
Inventor
Anand Deshpande
Pawan Kapur
Virendra V Rana
Mehrdad M Moslehi
Sean M Seutter
Heather Deshazer
Swaroop Kommera
Pranav Anbalagan
Benjamine E Rattle
Solene Coutant
Original Assignee
Solexel Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solexel Inc filed Critical Solexel Inc
Publication of MY184055A publication Critical patent/MY184055A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
MYPI2014703566A 2012-05-29 2013-05-29 Structures and methods of formation of contiguous and non-contiguous base regions for high efficiency back-contact solar cells MY184055A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201261652833P 2012-05-29 2012-05-29
US201361816830P 2013-04-29 2013-04-29
US201361827252P 2013-05-24 2013-05-24
PCT/US2013/043193 WO2013181298A1 (fr) 2012-05-29 2013-05-29 Structures et procédés de formation de régions de base contiguës et non contiguës pour des cellules solaires à contact arrière et haute efficacité

Publications (1)

Publication Number Publication Date
MY184055A true MY184055A (en) 2021-03-17

Family

ID=49673880

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2014703566A MY184055A (en) 2012-05-29 2013-05-29 Structures and methods of formation of contiguous and non-contiguous base regions for high efficiency back-contact solar cells

Country Status (7)

Country Link
EP (1) EP2856512A4 (fr)
JP (1) JP2015528196A (fr)
KR (1) KR101528447B1 (fr)
CN (1) CN104737302A (fr)
AU (2) AU2013267481A1 (fr)
MY (1) MY184055A (fr)
WO (1) WO2013181298A1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105322032A (zh) * 2014-07-30 2016-02-10 英稳达科技股份有限公司 太阳能电池
WO2017008120A1 (fr) * 2015-07-14 2017-01-19 Newsouth Innovations Pty Limited Procédé de formation d'une structure de contact sur une cellule solaire à contact arrière
KR102600379B1 (ko) * 2015-12-21 2023-11-10 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 태양 전지와 그 제조 방법
CN109983318B (zh) 2017-02-20 2021-07-06 株式会社富士金 流体控制器的异常检测装置、异常检测系统、异常检测方法及流体控制器
WO2019017281A1 (fr) * 2017-07-18 2019-01-24 シャープ株式会社 Dispositif de conversion photoélectrique
EP3624204B1 (fr) * 2018-09-13 2023-04-26 IMEC vzw Dépôt sélectif pour des motifs interdigités dans des cellules solaires

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6337283B1 (en) * 1999-12-30 2002-01-08 Sunpower Corporation Method of fabricating a silicon solar cell
JP2005310830A (ja) * 2004-04-16 2005-11-04 Sharp Corp 太陽電池および太陽電池の製造方法
DE102004050269A1 (de) * 2004-10-14 2006-04-20 Institut Für Solarenergieforschung Gmbh Verfahren zur Kontakttrennung elektrisch leitfähiger Schichten auf rückkontaktierten Solarzellen und Solarzelle
US9508886B2 (en) * 2007-10-06 2016-11-29 Solexel, Inc. Method for making a crystalline silicon solar cell substrate utilizing flat top laser beam
US20080216887A1 (en) * 2006-12-22 2008-09-11 Advent Solar, Inc. Interconnect Technologies for Back Contact Solar Cells and Modules
CN101689580B (zh) * 2007-03-16 2012-09-05 Bp北美公司 太阳能电池
DE102007059486A1 (de) * 2007-12-11 2009-06-18 Institut Für Solarenergieforschung Gmbh Rückkontaktsolarzelle mit länglichen, ineinander verschachtelten Emitter- und Basisbereichen an der Rückseite und Herstellungsverfahren hierfür
US20090217963A1 (en) * 2008-02-29 2009-09-03 Motorola, Inc. Photovoltaic apparatus for charging a portable electronic device and method for making
US20090301559A1 (en) * 2008-05-13 2009-12-10 Georgia Tech Research Corporation Solar cell having a high quality rear surface spin-on dielectric layer
US8207444B2 (en) * 2008-07-01 2012-06-26 Sunpower Corporation Front contact solar cell with formed electrically conducting layers on the front side and backside
US7951637B2 (en) * 2008-08-27 2011-05-31 Applied Materials, Inc. Back contact solar cells using printed dielectric barrier
DE102009003467A1 (de) * 2009-02-11 2010-08-19 Q-Cells Se Rückseitenkontaktierte Solarzelle
US20100243041A1 (en) * 2009-03-26 2010-09-30 Bp Corporation North America Inc. Apparatus and Method for Solar Cells with Laser Fired Contacts in Thermally Diffused Doped Regions
KR101153377B1 (ko) * 2009-08-24 2012-06-07 주식회사 효성 개선된 후면구조를 구비한 후면접합 태양전지 및 그 제조방법
JP2011061020A (ja) * 2009-09-10 2011-03-24 Sharp Corp 裏面コンタクト型太陽電池素子およびその製造方法
WO2011072179A2 (fr) * 2009-12-09 2011-06-16 Solexel, Inc. Structures de cellule solaire à contact arrière photovoltaïque de rendement élevé et procédés de fabrication utilisant des tranches semi-conductrices
EP2395554A3 (fr) * 2010-06-14 2015-03-11 Imec Procédé de fabrication pour cellules photovoltaïques à contact arrière interdigité
EP2601687A4 (fr) * 2010-08-05 2018-03-07 Solexel, Inc. Renforcement de plan arrière et interconnexions pour cellules solaires
KR20120021859A (ko) * 2010-08-19 2012-03-09 현대중공업 주식회사 태양전지의 후면전극 제조 방법
TWI420700B (zh) * 2010-12-29 2013-12-21 Au Optronics Corp 太陽能電池

Also Published As

Publication number Publication date
EP2856512A1 (fr) 2015-04-08
EP2856512A4 (fr) 2015-12-16
CN104737302A (zh) 2015-06-24
AU2013267481A1 (en) 2015-01-22
KR101528447B1 (ko) 2015-06-11
AU2016200610B2 (en) 2017-12-07
AU2016200610A1 (en) 2016-02-25
WO2013181298A1 (fr) 2013-12-05
JP2015528196A (ja) 2015-09-24
KR20150028782A (ko) 2015-03-16

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