[go: up one dir, main page]

AU2001291097A1 - Trench dmos transistor having lightly doped source structure - Google Patents

Trench dmos transistor having lightly doped source structure

Info

Publication number
AU2001291097A1
AU2001291097A1 AU2001291097A AU9109701A AU2001291097A1 AU 2001291097 A1 AU2001291097 A1 AU 2001291097A1 AU 2001291097 A AU2001291097 A AU 2001291097A AU 9109701 A AU9109701 A AU 9109701A AU 2001291097 A1 AU2001291097 A1 AU 2001291097A1
Authority
AU
Australia
Prior art keywords
lightly doped
doped source
source structure
dmos transistor
trench dmos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001291097A
Inventor
Fwu-Luan Hshieh
Koon Chong So
Yan Man Tsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Semiconductor Inc
Original Assignee
General Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Semiconductor Inc filed Critical General Semiconductor Inc
Publication of AU2001291097A1 publication Critical patent/AU2001291097A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/152—Source regions of DMOS transistors
    • H10D62/153—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
AU2001291097A 2000-09-28 2001-09-19 Trench dmos transistor having lightly doped source structure Abandoned AU2001291097A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09672209 2000-09-28
US09/672,209 US6445037B1 (en) 2000-09-28 2000-09-28 Trench DMOS transistor having lightly doped source structure
PCT/US2001/029230 WO2002027800A2 (en) 2000-09-28 2001-09-19 Trench dmos transistor having lightly doped source structure

Publications (1)

Publication Number Publication Date
AU2001291097A1 true AU2001291097A1 (en) 2002-04-08

Family

ID=24697599

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001291097A Abandoned AU2001291097A1 (en) 2000-09-28 2001-09-19 Trench dmos transistor having lightly doped source structure

Country Status (9)

Country Link
US (1) US6445037B1 (en)
EP (1) EP1320895B1 (en)
JP (1) JP4094945B2 (en)
KR (1) KR100642803B1 (en)
CN (1) CN1552101B (en)
AU (1) AU2001291097A1 (en)
DE (1) DE60127696T2 (en)
TW (1) TW506021B (en)
WO (1) WO2002027800A2 (en)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1261036A3 (en) * 2001-05-25 2004-07-28 Kabushiki Kaisha Toshiba Power MOSFET semiconductor device and method of manufacturing the same
DE10129958B4 (en) * 2001-06-21 2006-07-13 Infineon Technologies Ag Memory cell arrangement and manufacturing method
US6958275B2 (en) * 2003-03-11 2005-10-25 Integrated Discrete Devices, Llc MOSFET power transistors and methods
EP1708276A4 (en) * 2003-12-22 2008-04-16 Matsushita Electric Industrial Co Ltd VERTICAL GRID SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE DEVICE
US7372088B2 (en) 2004-01-27 2008-05-13 Matsushita Electric Industrial Co., Ltd. Vertical gate semiconductor device and method for fabricating the same
JP4091921B2 (en) 2004-02-16 2008-05-28 松下電器産業株式会社 Semiconductor device and manufacturing method thereof
JP4955222B2 (en) 2005-05-20 2012-06-20 ルネサスエレクトロニクス株式会社 Manufacturing method of semiconductor device
US7282406B2 (en) * 2006-03-06 2007-10-16 Semiconductor Companents Industries, L.L.C. Method of forming an MOS transistor and structure therefor
CN104538459A (en) * 2006-04-25 2015-04-22 皇家飞利浦电子股份有限公司 Implementation of avalanche photo diodes in (BI) CMOS processes
JP2008042166A (en) * 2006-07-12 2008-02-21 Matsushita Electric Ind Co Ltd Vertical gate semiconductor device and manufacturing method thereof
JP5128100B2 (en) * 2006-09-29 2013-01-23 三菱電機株式会社 Power semiconductor device
JP5369464B2 (en) * 2008-03-24 2013-12-18 富士電機株式会社 Silicon carbide MOS type semiconductor device
JP4877286B2 (en) * 2008-07-08 2012-02-15 株式会社デンソー Silicon carbide semiconductor device and manufacturing method thereof
JP5732790B2 (en) * 2010-09-14 2015-06-10 株式会社デンソー Silicon carbide semiconductor device and manufacturing method thereof
CN102623316A (en) * 2011-01-27 2012-08-01 无锡华润上华半导体有限公司 Methods for preparing groove bottom auxiliary gate dielectric layer and groove DMOS pipe
KR20150076840A (en) * 2013-12-27 2015-07-07 현대자동차주식회사 Semiconductor device and method manufacturing the same
KR20150078449A (en) * 2013-12-30 2015-07-08 현대자동차주식회사 Semiconductor device and method manufacturing the same
US9252293B2 (en) 2014-01-22 2016-02-02 Alexei Ankoudinov Trench field effect diodes and methods of manufacturing those diodes
US9419116B2 (en) 2014-01-22 2016-08-16 Alexei Ankoudinov Diodes and methods of manufacturing diodes
KR101655153B1 (en) * 2014-12-12 2016-09-22 현대자동차 주식회사 Semiconductor device and method manufacturing the same
DE112017000441B4 (en) * 2016-01-20 2023-03-09 Rohm Co., Ltd. SEMICONDUCTOR COMPONENT
JP6740986B2 (en) * 2017-08-31 2020-08-19 株式会社デンソー Silicon carbide semiconductor device and manufacturing method thereof
US10580888B1 (en) * 2018-08-08 2020-03-03 Infineon Technologies Austria Ag Oxygen inserted Si-layers for reduced contact implant outdiffusion in vertical power devices
CN115377221B (en) * 2022-09-14 2024-05-03 华羿微电子股份有限公司 MOSFET device with strong impact resistance and preparation method

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5072266A (en) 1988-12-27 1991-12-10 Siliconix Incorporated Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry
JPH03195064A (en) * 1989-12-25 1991-08-26 Nippon Telegr & Teleph Corp <Ntt> Mos field effect transistor
US5134448A (en) 1990-01-29 1992-07-28 Motorola, Inc. MOSFET with substrate source contact
US5023196A (en) * 1990-01-29 1991-06-11 Motorola Inc. Method for forming a MOSFET with substrate source contact
US5410170A (en) 1993-04-14 1995-04-25 Siliconix Incorporated DMOS power transistors with reduced number of contacts using integrated body-source connections
GB9313843D0 (en) * 1993-07-05 1993-08-18 Philips Electronics Uk Ltd A semiconductor device comprising an insulated gate field effect transistor
JPH07122749A (en) * 1993-09-01 1995-05-12 Toshiba Corp Semiconductor device and manufacturing method thereof
JP3400846B2 (en) 1994-01-20 2003-04-28 三菱電機株式会社 Semiconductor device having trench structure and method of manufacturing the same
EP0726603B1 (en) 1995-02-10 1999-04-21 SILICONIX Incorporated Trenched field effect transistor with PN depletion barrier
US5672889A (en) * 1995-03-15 1997-09-30 General Electric Company Vertical channel silicon carbide metal-oxide-semiconductor field effect transistor with self-aligned gate for microwave and power applications, and method of making
JP3528420B2 (en) 1996-04-26 2004-05-17 株式会社デンソー Semiconductor device and manufacturing method thereof
DE19638439C2 (en) * 1996-09-19 2000-06-15 Siemens Ag Vertical semiconductor device controllable by field effect and manufacturing process
JP3164030B2 (en) * 1997-09-19 2001-05-08 日本電気株式会社 Manufacturing method of vertical field effect transistor
JP3281847B2 (en) * 1997-09-26 2002-05-13 三洋電機株式会社 Method for manufacturing semiconductor device
US6262453B1 (en) * 1998-04-24 2001-07-17 Magepower Semiconductor Corp. Double gate-oxide for reducing gate-drain capacitance in trenched DMOS with high-dopant concentration buried-region under trenched gate
US5972754A (en) * 1998-06-10 1999-10-26 Mosel Vitelic, Inc. Method for fabricating MOSFET having increased effective gate length
US6351009B1 (en) * 1999-03-01 2002-02-26 Fairchild Semiconductor Corporation MOS-gated device having a buried gate and process for forming same
GB9916868D0 (en) * 1999-07-20 1999-09-22 Koninkl Philips Electronics Nv Trench-gate field-effect transistors and their manufacture
JP2001332725A (en) * 2000-03-15 2001-11-30 Seiko Instruments Inc Semiconductor device and its manufacturing method
JP3910335B2 (en) * 2000-03-22 2007-04-25 セイコーインスツル株式会社 Vertical MOS transistor and manufacturing method thereof

Also Published As

Publication number Publication date
WO2002027800A2 (en) 2002-04-04
DE60127696T2 (en) 2007-12-27
CN1552101A (en) 2004-12-01
CN1552101B (en) 2010-06-16
KR20030033083A (en) 2003-04-26
KR100642803B1 (en) 2006-11-03
JP4094945B2 (en) 2008-06-04
EP1320895A2 (en) 2003-06-25
DE60127696D1 (en) 2007-05-16
TW506021B (en) 2002-10-11
WO2002027800A3 (en) 2002-06-13
JP2004525500A (en) 2004-08-19
EP1320895B1 (en) 2007-04-04
US6445037B1 (en) 2002-09-03

Similar Documents

Publication Publication Date Title
AU2001291097A1 (en) Trench dmos transistor having lightly doped source structure
AU2002353930A1 (en) Trench dmos device with improved drain contact
AU2002348308A1 (en) Trench mosfet device with improved on-resistance
AU2001266977A1 (en) Trench mosfet with double-diffused body profile
AU2002350184A1 (en) Trench mosfet having low gate charge
AU2002366175A1 (en) Trench mosfet device with polycrystalline silicon source contact structure
AU2001294951A1 (en) Trench dmos transistor with embedded trench schottky rectifier
AU5172001A (en) Trench dmos transistor having a double gate structure
EP1504473A4 (en) Trench dmos transistor structure
AU2057097A (en) Trenched dmos transistor with lightly doped tub
AU2001234796A1 (en) Double recessed transistor
AU2001283217A1 (en) Power mos device with asymmetrical channel structure
DE50015742D1 (en) TRENCH MOS TRANSISTOR
AU2001241502A1 (en) Trench gate dmos field-effect transistor and method of making the same
AU7828898A (en) Lateral diffused mos transistor with trench source contact
AU2002333593A1 (en) Drain sealing device
AU2002329862A1 (en) Trench dmos transistor with embedded trench schottky rectifier
AU2002326812A1 (en) Trench fet with self aligned source and contact
EP1145326A3 (en) Cellular trench-gate field-effect transistors
AU2001263211A1 (en) Buried channel strained silicon fet using an ion implanted doped layer
AU2001238287A1 (en) Dmos transistor structure having improved performance
AU2002239754A1 (en) Doped semiconductor nanocrystals
SG104319A1 (en) Soi transistor with polysilicon seed
AU2002339582A1 (en) Lateral soi field-effect transistor
EP1382071A4 (en) Double diffused field effect transistor having reduced on-resistance