AU2001238287A1 - Dmos transistor structure having improved performance - Google Patents
Dmos transistor structure having improved performanceInfo
- Publication number
- AU2001238287A1 AU2001238287A1 AU2001238287A AU3828701A AU2001238287A1 AU 2001238287 A1 AU2001238287 A1 AU 2001238287A1 AU 2001238287 A AU2001238287 A AU 2001238287A AU 3828701 A AU3828701 A AU 3828701A AU 2001238287 A1 AU2001238287 A1 AU 2001238287A1
- Authority
- AU
- Australia
- Prior art keywords
- improved performance
- transistor structure
- dmos transistor
- dmos
- performance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
-
- H10P10/00—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/108—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] having localised breakdown regions, e.g. built-in avalanching regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
- H10D62/151—Source or drain regions of field-effect devices of IGFETs
- H10D62/152—Source regions of DMOS transistors
- H10D62/154—Dispositions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/393—Body regions of DMOS transistors or IGBTs
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09515335 | 2000-02-29 | ||
| US09/515,335 US6548860B1 (en) | 2000-02-29 | 2000-02-29 | DMOS transistor structure having improved performance |
| PCT/US2001/004796 WO2001065607A2 (en) | 2000-02-29 | 2001-02-15 | Trench gate dmos field-effect transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU2001238287A1 true AU2001238287A1 (en) | 2001-09-12 |
Family
ID=24050918
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2001238287A Abandoned AU2001238287A1 (en) | 2000-02-29 | 2001-02-15 | Dmos transistor structure having improved performance |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6548860B1 (en) |
| EP (2) | EP2267786A3 (en) |
| JP (1) | JP2003529209A (en) |
| KR (1) | KR20020079919A (en) |
| CN (1) | CN1279620C (en) |
| AU (1) | AU2001238287A1 (en) |
| TW (1) | TW493280B (en) |
| WO (1) | WO2001065607A2 (en) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10127885B4 (en) * | 2001-06-08 | 2009-09-24 | Infineon Technologies Ag | Trench power semiconductor device |
| US6838722B2 (en) * | 2002-03-22 | 2005-01-04 | Siliconix Incorporated | Structures of and methods of fabricating trench-gated MIS devices |
| US8629019B2 (en) * | 2002-09-24 | 2014-01-14 | Vishay-Siliconix | Method of forming self aligned contacts for a power MOSFET |
| US7494876B1 (en) | 2005-04-21 | 2009-02-24 | Vishay Siliconix | Trench-gated MIS device having thick polysilicon insulation layer at trench bottom and method of fabricating the same |
| US7583485B1 (en) | 2005-07-26 | 2009-09-01 | Vishay-Siliconix | Electrostatic discharge protection circuit for integrated circuits |
| US7544545B2 (en) | 2005-12-28 | 2009-06-09 | Vishay-Siliconix | Trench polysilicon diode |
| CN101361193B (en) * | 2006-01-18 | 2013-07-10 | 维西埃-硅化物公司 | Floating gate structure with high electrostatic discharge performance |
| DE102006029750B4 (en) * | 2006-06-28 | 2010-12-02 | Infineon Technologies Austria Ag | Trench transistor and method of manufacture |
| US20080206944A1 (en) * | 2007-02-23 | 2008-08-28 | Pan-Jit International Inc. | Method for fabricating trench DMOS transistors and schottky elements |
| US10600902B2 (en) | 2008-02-13 | 2020-03-24 | Vishay SIliconix, LLC | Self-repairing field effect transisitor |
| US9230810B2 (en) | 2009-09-03 | 2016-01-05 | Vishay-Siliconix | System and method for substrate wafer back side and edge cross section seals |
| US9425305B2 (en) | 2009-10-20 | 2016-08-23 | Vishay-Siliconix | Structures of and methods of fabricating split gate MIS devices |
| US9419129B2 (en) | 2009-10-21 | 2016-08-16 | Vishay-Siliconix | Split gate semiconductor device with curved gate oxide profile |
| US9577089B2 (en) | 2010-03-02 | 2017-02-21 | Vishay-Siliconix | Structures and methods of fabricating dual gate devices |
| CN103688363B (en) | 2011-05-18 | 2017-08-04 | 威世硅尼克斯公司 | Semiconductor device |
| JP6290526B2 (en) | 2011-08-24 | 2018-03-07 | ローム株式会社 | Semiconductor device and manufacturing method thereof |
| JP6524279B2 (en) * | 2011-08-24 | 2019-06-05 | ローム株式会社 | Semiconductor device and method of manufacturing the same |
| JP6219140B2 (en) * | 2013-11-22 | 2017-10-25 | ルネサスエレクトロニクス株式会社 | Semiconductor device |
| US10234486B2 (en) | 2014-08-19 | 2019-03-19 | Vishay/Siliconix | Vertical sense devices in vertical trench MOSFET |
| US11217541B2 (en) | 2019-05-08 | 2022-01-04 | Vishay-Siliconix, LLC | Transistors with electrically active chip seal ring and methods of manufacture |
| US11218144B2 (en) | 2019-09-12 | 2022-01-04 | Vishay-Siliconix, LLC | Semiconductor device with multiple independent gates |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58100460A (en) | 1981-12-11 | 1983-06-15 | Hitachi Ltd | Vertical type metal oxide semiconductor device |
| US5072266A (en) | 1988-12-27 | 1991-12-10 | Siliconix Incorporated | Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry |
| JPH0354868A (en) | 1989-07-21 | 1991-03-08 | Fuji Electric Co Ltd | Mos type semiconductor device |
| JP3170966B2 (en) * | 1993-08-25 | 2001-05-28 | 富士電機株式会社 | Insulated gate control semiconductor device and manufacturing method thereof |
| JPH0878668A (en) * | 1994-08-31 | 1996-03-22 | Toshiba Corp | Power semiconductor device |
| US5688725A (en) * | 1994-12-30 | 1997-11-18 | Siliconix Incorporated | Method of making a trench mosfet with heavily doped delta layer to provide low on-resistance |
| US5998837A (en) * | 1995-06-02 | 1999-12-07 | Siliconix Incorporated | Trench-gated power MOSFET with protective diode having adjustable breakdown voltage |
| US5763915A (en) | 1996-02-27 | 1998-06-09 | Magemos Corporation | DMOS transistors having trenched gate oxide |
| JP3257394B2 (en) * | 1996-04-04 | 2002-02-18 | 株式会社日立製作所 | Voltage driven semiconductor device |
| US5998266A (en) | 1996-12-19 | 1999-12-07 | Magepower Semiconductor Corp. | Method of forming a semiconductor structure having laterally merged body layer |
| US5986304A (en) | 1997-01-13 | 1999-11-16 | Megamos Corporation | Punch-through prevention in trenched DMOS with poly-silicon layer covering trench corners |
-
2000
- 2000-02-29 US US09/515,335 patent/US6548860B1/en not_active Expired - Lifetime
-
2001
- 2001-02-15 JP JP2001564397A patent/JP2003529209A/en active Pending
- 2001-02-15 EP EP10012843A patent/EP2267786A3/en not_active Withdrawn
- 2001-02-15 KR KR1020027011229A patent/KR20020079919A/en not_active Withdrawn
- 2001-02-15 WO PCT/US2001/004796 patent/WO2001065607A2/en not_active Ceased
- 2001-02-15 CN CNB018058078A patent/CN1279620C/en not_active Expired - Fee Related
- 2001-02-15 EP EP01910706A patent/EP1266406B1/en not_active Expired - Lifetime
- 2001-02-15 AU AU2001238287A patent/AU2001238287A1/en not_active Abandoned
- 2001-02-20 TW TW090103825A patent/TW493280B/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JP2003529209A (en) | 2003-09-30 |
| KR20020079919A (en) | 2002-10-19 |
| EP1266406B1 (en) | 2011-11-30 |
| WO2001065607A2 (en) | 2001-09-07 |
| CN1279620C (en) | 2006-10-11 |
| EP2267786A2 (en) | 2010-12-29 |
| EP1266406A2 (en) | 2002-12-18 |
| CN1416597A (en) | 2003-05-07 |
| EP2267786A3 (en) | 2011-01-12 |
| US6548860B1 (en) | 2003-04-15 |
| TW493280B (en) | 2002-07-01 |
| WO2001065607A3 (en) | 2002-05-30 |
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