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AU2002239754A1 - Doped semiconductor nanocrystals - Google Patents

Doped semiconductor nanocrystals

Info

Publication number
AU2002239754A1
AU2002239754A1 AU2002239754A AU3975402A AU2002239754A1 AU 2002239754 A1 AU2002239754 A1 AU 2002239754A1 AU 2002239754 A AU2002239754 A AU 2002239754A AU 3975402 A AU3975402 A AU 3975402A AU 2002239754 A1 AU2002239754 A1 AU 2002239754A1
Authority
AU
Australia
Prior art keywords
doped semiconductor
semiconductor nanocrystals
nanocrystals
doped
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002239754A
Inventor
Philippe Guyot-Sionnest
Moonsub Shim
Conjun Wang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arch Development Corp
Original Assignee
Arch Development Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Arch Development Corp filed Critical Arch Development Corp
Publication of AU2002239754A1 publication Critical patent/AU2002239754A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H10P14/2901—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10P14/265—
    • H10P14/3424—
    • H10P14/3428—
    • H10P14/3431—
    • H10P14/3461—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
AU2002239754A 2000-10-19 2001-10-19 Doped semiconductor nanocrystals Abandoned AU2002239754A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/694,090 US6939604B1 (en) 2000-10-19 2000-10-19 Doped semiconductor nanocrystals
US09/694,090 2000-10-19
PCT/US2001/051067 WO2002043159A2 (en) 2000-10-19 2001-10-19 Doped semiconductor nanocrystals

Publications (1)

Publication Number Publication Date
AU2002239754A1 true AU2002239754A1 (en) 2002-06-03

Family

ID=24787358

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002239754A Abandoned AU2002239754A1 (en) 2000-10-19 2001-10-19 Doped semiconductor nanocrystals

Country Status (3)

Country Link
US (2) US6939604B1 (en)
AU (1) AU2002239754A1 (en)
WO (1) WO2002043159A2 (en)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6939604B1 (en) * 2000-10-19 2005-09-06 Arch Development Corporation Doped semiconductor nanocrystals
WO2002073155A1 (en) * 2001-03-09 2002-09-19 Scientific Development Service Stroisnabservice Ultrasensitive non-isotopic water-soluble nanocrystals
WO2005083811A2 (en) * 2003-09-23 2005-09-09 Evergreen Solar, Inc. Organic solar cells including group iv nanocrystals and method of manufacture
US7746681B2 (en) 2005-01-07 2010-06-29 Invisage Technologies, Inc. Methods of making quantum dot films
US7326908B2 (en) 2004-04-19 2008-02-05 Edward Sargent Optically-regulated optical emission using colloidal quantum dot nanocrystals
US7742322B2 (en) 2005-01-07 2010-06-22 Invisage Technologies, Inc. Electronic and optoelectronic devices with quantum dot films
US7773404B2 (en) 2005-01-07 2010-08-10 Invisage Technologies, Inc. Quantum dot optical devices with enhanced gain and sensitivity and methods of making same
CA2519608A1 (en) 2005-01-07 2006-07-07 Edward Sargent Quantum dot-polymer nanocomposite photodetectors and photovoltaics
DE112006001067T5 (en) * 2005-04-25 2008-03-13 Board Of Trustees Of The University Of Arkansas Doped semiconductor nanocrystals and process for their preparation
EP1984543A2 (en) * 2006-01-20 2008-10-29 Agency for Science, Technology and Research Synthesis of alloyed nanocrystals in aqueous or water-soluble solvents
US9406759B2 (en) * 2006-08-30 2016-08-02 University Of Florida Research Foundation, Inc. Methods for forming nanocrystals with position-controlled dopants
WO2008063653A1 (en) 2006-11-21 2008-05-29 Qd Vision, Inc. Semiconductor nanocrystals and compositions and devices including same
WO2008063658A2 (en) 2006-11-21 2008-05-29 Qd Vision, Inc. Semiconductor nanocrystals and compositions and devices including same
WO2008063652A1 (en) 2006-11-21 2008-05-29 Qd Vision, Inc. Blue emitting semiconductor nanocrystals and compositions and devices including same
US7778301B2 (en) * 2007-06-26 2010-08-17 Georgia Tech Research Corporation Cadmium sulfide quantum dot lasing in room temperature liquid solution
WO2009046060A2 (en) * 2007-10-01 2009-04-09 Davis, Joseph And Negley Apparatus and methods to produce electrical energy by enhanced down-conversion of photons
EP2283342B1 (en) 2008-04-03 2018-07-11 Samsung Research America, Inc. Method for preparing a light-emitting device including quantum dots
US9525148B2 (en) 2008-04-03 2016-12-20 Qd Vision, Inc. Device including quantum dots
US20110291049A1 (en) * 2008-06-10 2011-12-01 Board Of Trustees Of The University Of Arkansas Indium arsenide nanocrystals and methods of making the same
KR101480511B1 (en) * 2008-12-19 2015-01-08 삼성전자 주식회사 Method for manufacturing nanocrystals coated with metal-surfactant layer
TWI500995B (en) * 2009-02-23 2015-09-21 Yissum Res Dev Co Optical display device and method thereof
EP2424814A4 (en) 2009-04-28 2016-06-01 Qd Vision Inc OPTICAL MATERIALS, OPTICAL COMPONENTS AND METHODS
KR101924080B1 (en) 2009-11-11 2018-11-30 삼성 리서치 아메리카 인코포레이티드 Device including quantum dots
US9529228B2 (en) 2010-11-05 2016-12-27 Yissum Research Development Company Of The Hebrew University Of Jerusalem, Ltd. Polarizing lighting systems
US9543385B2 (en) 2011-02-14 2017-01-10 Yissum Research Development Company Of The Hebrew University Of Jerusalem Ltd. Heavily doped semiconductor nanoparticles
JP5971866B2 (en) * 2011-03-31 2016-08-17 国立大学法人北海道大学 Scintillator plate, radiation measuring apparatus, radiation imaging apparatus, and scintillator plate manufacturing method
EP2817613A4 (en) * 2012-02-21 2016-08-03 Massachusetts Inst Technology SPECTROMETER DEVICE
KR20180027629A (en) * 2015-07-30 2018-03-14 퍼시픽 라이트 테크놀로지스 코포레이션 Nanocrystalline quantum dot heterostructure with low cadmium content
US20230090252A1 (en) * 2020-01-15 2023-03-23 Sharp Kabushiki Kaisha Light-emitting element and light-emitting device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4529832A (en) * 1984-02-21 1985-07-16 Savin Corporation Lead-cadmium-sulphide solar cell
US6241819B1 (en) * 1993-04-20 2001-06-05 North American Philips Corp. Method of manufacturing quantum sized doped semiconductor particles
US6048616A (en) * 1993-04-21 2000-04-11 Philips Electronics N.A. Corp. Encapsulated quantum sized doped semiconductor particles and method of manufacturing same
US5537000A (en) * 1994-04-29 1996-07-16 The Regents, University Of California Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices
US5446286A (en) * 1994-08-11 1995-08-29 Bhargava; Rameshwar N. Ultra-fast detectors using doped nanocrystal insulators
AU3894595A (en) * 1994-11-08 1996-05-31 Spectra Science Corporation Semiconductor nanocrystal display materials and display apparatus employing same
US5560657A (en) * 1995-03-08 1996-10-01 Morgan; Brian R. Tamper-indicating label
US6057561A (en) * 1997-03-07 2000-05-02 Japan Science And Technology Corporation Optical semiconductor element
US6322901B1 (en) * 1997-11-13 2001-11-27 Massachusetts Institute Of Technology Highly luminescent color-selective nano-crystalline materials
US5985173A (en) * 1997-11-18 1999-11-16 Gray; Henry F. Phosphors having a semiconductor host surrounded by a shell
US6342313B1 (en) * 1998-08-03 2002-01-29 The Curators Of The University Of Missouri Oxide films and process for preparing same
EP1179185B1 (en) * 1999-05-07 2009-08-12 Life Technologies Corporation A method of detecting an analyte using semiconductor nanocrystals
US6939604B1 (en) * 2000-10-19 2005-09-06 Arch Development Corporation Doped semiconductor nanocrystals

Also Published As

Publication number Publication date
US6939604B1 (en) 2005-09-06
WO2002043159A2 (en) 2002-05-30
US7227177B2 (en) 2007-06-05
US20050189534A1 (en) 2005-09-01
WO2002043159A3 (en) 2003-04-17

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