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AU2001234796A1 - Double recessed transistor - Google Patents

Double recessed transistor

Info

Publication number
AU2001234796A1
AU2001234796A1 AU2001234796A AU3479601A AU2001234796A1 AU 2001234796 A1 AU2001234796 A1 AU 2001234796A1 AU 2001234796 A AU2001234796 A AU 2001234796A AU 3479601 A AU3479601 A AU 3479601A AU 2001234796 A1 AU2001234796 A1 AU 2001234796A1
Authority
AU
Australia
Prior art keywords
recessed transistor
double recessed
double
transistor
recessed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001234796A
Inventor
William E. Hoke
Katerina Y. Hur
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of AU2001234796A1 publication Critical patent/AU2001234796A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
    • H10D30/4738—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material having multiple donor layers
    • H10D64/0125—
AU2001234796A 2000-02-14 2001-02-02 Double recessed transistor Abandoned AU2001234796A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/504,660 US6797994B1 (en) 2000-02-14 2000-02-14 Double recessed transistor
US09504660 2000-02-14
PCT/US2001/003563 WO2001061733A2 (en) 2000-02-14 2001-02-02 Double recessed transistor

Publications (1)

Publication Number Publication Date
AU2001234796A1 true AU2001234796A1 (en) 2001-08-27

Family

ID=24007215

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001234796A Abandoned AU2001234796A1 (en) 2000-02-14 2001-02-02 Double recessed transistor

Country Status (3)

Country Link
US (2) US6797994B1 (en)
AU (1) AU2001234796A1 (en)
WO (1) WO2001061733A2 (en)

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Also Published As

Publication number Publication date
WO2001061733A3 (en) 2001-12-20
US6797994B1 (en) 2004-09-28
WO2001061733A2 (en) 2001-08-23
US20010023133A1 (en) 2001-09-20
US6620662B2 (en) 2003-09-16

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