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AU2001268547A1 - Mosfet and method for fabrication of mosfet with buried gate - Google Patents

Mosfet and method for fabrication of mosfet with buried gate

Info

Publication number
AU2001268547A1
AU2001268547A1 AU2001268547A AU6854701A AU2001268547A1 AU 2001268547 A1 AU2001268547 A1 AU 2001268547A1 AU 2001268547 A AU2001268547 A AU 2001268547A AU 6854701 A AU6854701 A AU 6854701A AU 2001268547 A1 AU2001268547 A1 AU 2001268547A1
Authority
AU
Australia
Prior art keywords
mosfet
fabrication
buried gate
buried
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001268547A
Inventor
Igor Bol
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies Americas Corp
Original Assignee
International Rectifier Corp USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Rectifier Corp USA filed Critical International Rectifier Corp USA
Publication of AU2001268547A1 publication Critical patent/AU2001268547A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H10D64/01344—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H10D64/01342—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
AU2001268547A 2000-06-19 2001-06-18 Mosfet and method for fabrication of mosfet with buried gate Abandoned AU2001268547A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/593,447 US6570218B1 (en) 2000-06-19 2000-06-19 MOSFET with a buried gate
US09593447 2000-06-19
PCT/US2001/019509 WO2002001645A1 (en) 2000-06-19 2001-06-18 Mosfet and method for fabrication of mosfet with buried gate

Publications (1)

Publication Number Publication Date
AU2001268547A1 true AU2001268547A1 (en) 2002-01-08

Family

ID=24374744

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001268547A Abandoned AU2001268547A1 (en) 2000-06-19 2001-06-18 Mosfet and method for fabrication of mosfet with buried gate

Country Status (3)

Country Link
US (2) US6570218B1 (en)
AU (1) AU2001268547A1 (en)
WO (1) WO2002001645A1 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4363736B2 (en) * 2000-03-01 2009-11-11 新電元工業株式会社 Transistor and manufacturing method thereof
US7531395B2 (en) 2004-09-01 2009-05-12 Micron Technology, Inc. Methods of forming a layer comprising epitaxial silicon, and methods of forming field effect transistors
US7132355B2 (en) * 2004-09-01 2006-11-07 Micron Technology, Inc. Method of forming a layer comprising epitaxial silicon and a field effect transistor
US8673706B2 (en) * 2004-09-01 2014-03-18 Micron Technology, Inc. Methods of forming layers comprising epitaxial silicon
US7144779B2 (en) * 2004-09-01 2006-12-05 Micron Technology, Inc. Method of forming epitaxial silicon-comprising material
US8338887B2 (en) 2005-07-06 2012-12-25 Infineon Technologies Ag Buried gate transistor
US20070082454A1 (en) * 2005-10-12 2007-04-12 Infineon Technologies Ag Microelectronic device and method of manufacturing a microelectronic device
US20090179262A1 (en) * 2008-01-16 2009-07-16 Qimonda Ag Floating Body Memory Cell with a Non-Overlapping Gate Electrode
US9136397B2 (en) 2013-05-31 2015-09-15 Infineon Technologies Ag Field-effect semiconductor device
US9184281B2 (en) 2013-10-30 2015-11-10 Infineon Technologies Ag Method for manufacturing a vertical semiconductor device and vertical semiconductor device
US9613973B2 (en) * 2014-10-03 2017-04-04 Micron Technology, Inc. Memory having a continuous channel
US9780208B1 (en) * 2016-07-18 2017-10-03 Globalfoundries Inc. Method and structure of forming self-aligned RMG gate for VFET
US20220238698A1 (en) * 2021-01-26 2022-07-28 Pakal Technologies, Inc. Mos-gated trench device using low mask count and simplified processing

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2623850B2 (en) * 1989-08-25 1997-06-25 富士電機株式会社 Conductivity modulation type MOSFET
US5554862A (en) * 1992-03-31 1996-09-10 Kabushiki Kaisha Toshiba Power semiconductor device
US5233215A (en) * 1992-06-08 1993-08-03 North Carolina State University At Raleigh Silicon carbide power MOSFET with floating field ring and floating field plate
JPH0637323A (en) * 1992-07-20 1994-02-10 Oki Electric Ind Co Ltd Vertical type mosfet device and manufacture thereof
US5592005A (en) * 1995-03-31 1997-01-07 Siliconix Incorporated Punch-through field effect transistor
EP0862222A4 (en) 1996-09-19 1999-12-01 Ngk Insulators Ltd SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
US6172398B1 (en) 1997-08-11 2001-01-09 Magepower Semiconductor Corp. Trenched DMOS device provided with body-dopant redistribution-compensation region for preventing punch through and adjusting threshold voltage
KR100275756B1 (en) * 1998-08-27 2000-12-15 김덕중 Trench insulated gate bipolar transistor
US6316806B1 (en) * 1999-03-31 2001-11-13 Fairfield Semiconductor Corporation Trench transistor with a self-aligned source

Also Published As

Publication number Publication date
US6858499B2 (en) 2005-02-22
US6570218B1 (en) 2003-05-27
WO2002001645A1 (en) 2002-01-03
US20040191971A1 (en) 2004-09-30

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