[go: up one dir, main page]

AU2001261306A1 - High mobility heterojunction transistor and method - Google Patents

High mobility heterojunction transistor and method

Info

Publication number
AU2001261306A1
AU2001261306A1 AU2001261306A AU6130601A AU2001261306A1 AU 2001261306 A1 AU2001261306 A1 AU 2001261306A1 AU 2001261306 A AU2001261306 A AU 2001261306A AU 6130601 A AU6130601 A AU 6130601A AU 2001261306 A1 AU2001261306 A1 AU 2001261306A1
Authority
AU
Australia
Prior art keywords
high mobility
heterojunction transistor
mobility heterojunction
transistor
mobility
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001261306A
Inventor
Sanjay Kumar Banerjee
Qiqing Ouyang
Al F. Tasch Jr.
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Texas System
Original Assignee
University of Texas System
University of Texas at Austin
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Texas System, University of Texas at Austin filed Critical University of Texas System
Publication of AU2001261306A1 publication Critical patent/AU2001261306A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
AU2001261306A 2000-05-09 2001-05-09 High mobility heterojunction transistor and method Abandoned AU2001261306A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09568091 2000-05-09
US09/568,091 US6319799B1 (en) 2000-05-09 2000-05-09 High mobility heterojunction transistor and method
PCT/US2001/014951 WO2001086713A1 (en) 2000-05-09 2001-05-09 High mobility heterojunction transistor and method

Publications (1)

Publication Number Publication Date
AU2001261306A1 true AU2001261306A1 (en) 2001-11-20

Family

ID=24269890

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001261306A Abandoned AU2001261306A1 (en) 2000-05-09 2001-05-09 High mobility heterojunction transistor and method

Country Status (4)

Country Link
US (1) US6319799B1 (en)
AU (1) AU2001261306A1 (en)
TW (1) TW536825B (en)
WO (1) WO2001086713A1 (en)

Families Citing this family (84)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001093338A1 (en) * 2000-05-26 2001-12-06 Amberwave Systems Corporation Buried channel strained silicon fet using an ion implanted doped layer
US6743680B1 (en) * 2000-06-22 2004-06-01 Advanced Micro Devices, Inc. Process for manufacturing transistors having silicon/germanium channel regions
US6830976B2 (en) * 2001-03-02 2004-12-14 Amberwave Systems Corproation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6703688B1 (en) 2001-03-02 2004-03-09 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US7205604B2 (en) 2001-03-13 2007-04-17 International Business Machines Corporation Ultra scalable high speed heterojunction vertical n-channel MISFETs and methods thereof
US6709935B1 (en) 2001-03-26 2004-03-23 Advanced Micro Devices, Inc. Method of locally forming a silicon/geranium channel layer
US6482705B1 (en) * 2001-04-03 2002-11-19 Advanced Micro Devices, Inc. Method of fabricating a semiconductor device having a MOSFET with an amorphous SiGe gate electrode and an elevated crystalline SiGe source/drain structure and a device thereby formed
CN1255878C (en) * 2001-04-12 2006-05-10 松下电器产业株式会社 Semiconductor device and manufacturing method thereof
US20030153157A1 (en) * 2001-10-18 2003-08-14 Foad Majeed A. Low energy ion implantation into SiGe
US6737339B2 (en) * 2001-10-24 2004-05-18 Agere Systems Inc. Semiconductor device having a doped lattice matching layer and a method of manufacture therefor
CN1620728A (en) * 2002-01-21 2005-05-25 松下电器产业株式会社 Semiconductor device
US6995430B2 (en) * 2002-06-07 2006-02-07 Amberwave Systems Corporation Strained-semiconductor-on-insulator device structures
US20030227057A1 (en) 2002-06-07 2003-12-11 Lochtefeld Anthony J. Strained-semiconductor-on-insulator device structures
WO2003105206A1 (en) 2002-06-10 2003-12-18 Amberwave Systems Corporation Growing source and drain elements by selecive epitaxy
US6982474B2 (en) 2002-06-25 2006-01-03 Amberwave Systems Corporation Reacted conductive gate electrodes
JP4585510B2 (en) 2003-03-07 2010-11-24 台湾積體電路製造股▲ふん▼有限公司 Shallow trench isolation process
US6982229B2 (en) * 2003-04-18 2006-01-03 Lsi Logic Corporation Ion recoil implantation and enhanced carrier mobility in CMOS device
US20040206951A1 (en) * 2003-04-18 2004-10-21 Mirabedini Mohammad R. Ion implantation in channel region of CMOS device for enhanced carrier mobility
US6974733B2 (en) * 2003-06-16 2005-12-13 Intel Corporation Double-gate transistor with enhanced carrier mobility
US6943407B2 (en) * 2003-06-17 2005-09-13 International Business Machines Corporation Low leakage heterojunction vertical transistors and high performance devices thereof
US6927414B2 (en) * 2003-06-17 2005-08-09 International Business Machines Corporation High speed lateral heterojunction MISFETs realized by 2-dimensional bandgap engineering and methods thereof
TWI294670B (en) * 2003-06-17 2008-03-11 Ibm Ultra scalable high speed heterojunction vertical n-channel misfets and methods thereof
US7057216B2 (en) * 2003-10-31 2006-06-06 International Business Machines Corporation High mobility heterojunction complementary field effect transistors and methods thereof
US7078723B2 (en) * 2004-04-06 2006-07-18 Taiwan Semiconductor Manufacturing Company, Ltd. Microelectronic device with depth adjustable sill
US7023018B2 (en) * 2004-04-06 2006-04-04 Texas Instruments Incorporated SiGe transistor with strained layers
US7288448B2 (en) * 2004-08-24 2007-10-30 Orlowski Marius K Method and apparatus for mobility enhancement in a semiconductor device
US7365401B2 (en) * 2006-03-28 2008-04-29 International Business Machines Corporation Dual-plane complementary metal oxide semiconductor
US7525161B2 (en) * 2007-01-31 2009-04-28 International Business Machines Corporation Strained MOS devices using source/drain epitaxy
KR101369907B1 (en) * 2007-10-31 2014-03-04 주성엔지니어링(주) Transistor and method of manufacturing the same
US8043888B2 (en) * 2008-01-18 2011-10-25 Freescale Semiconductor, Inc. Phase change memory cell with heater and method therefor
US8563355B2 (en) * 2008-01-18 2013-10-22 Freescale Semiconductor, Inc. Method of making a phase change memory cell having a silicide heater in conjunction with a FinFET
US8384122B1 (en) * 2008-04-17 2013-02-26 The Regents Of The University Of California Tunneling transistor suitable for low voltage operation
US8273617B2 (en) 2009-09-30 2012-09-25 Suvolta, Inc. Electronic devices and systems, and methods for making and using the same
US8421162B2 (en) 2009-09-30 2013-04-16 Suvolta, Inc. Advanced transistors with punch through suppression
US8530286B2 (en) 2010-04-12 2013-09-10 Suvolta, Inc. Low power semiconductor transistor structure and method of fabrication thereof
US8569128B2 (en) 2010-06-21 2013-10-29 Suvolta, Inc. Semiconductor structure and method of fabrication thereof with mixed metal types
US8759872B2 (en) 2010-06-22 2014-06-24 Suvolta, Inc. Transistor with threshold voltage set notch and method of fabrication thereof
US8637871B2 (en) * 2010-11-04 2014-01-28 International Business Machines Corporation Asymmetric hetero-structure FET and method of manufacture
US8404551B2 (en) 2010-12-03 2013-03-26 Suvolta, Inc. Source/drain extension control for advanced transistors
DE102010063293B3 (en) * 2010-12-16 2012-05-31 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Method of fabricating transistors with different source / drain implant spacers
US8461875B1 (en) 2011-02-18 2013-06-11 Suvolta, Inc. Digital circuits having improved transistors, and methods therefor
US8525271B2 (en) 2011-03-03 2013-09-03 Suvolta, Inc. Semiconductor structure with improved channel stack and method for fabrication thereof
US8748270B1 (en) 2011-03-30 2014-06-10 Suvolta, Inc. Process for manufacturing an improved analog transistor
US8796048B1 (en) 2011-05-11 2014-08-05 Suvolta, Inc. Monitoring and measurement of thin film layers
US8999861B1 (en) 2011-05-11 2015-04-07 Suvolta, Inc. Semiconductor structure with substitutional boron and method for fabrication thereof
US8811068B1 (en) 2011-05-13 2014-08-19 Suvolta, Inc. Integrated circuit devices and methods
US8569156B1 (en) 2011-05-16 2013-10-29 Suvolta, Inc. Reducing or eliminating pre-amorphization in transistor manufacture
US8735987B1 (en) 2011-06-06 2014-05-27 Suvolta, Inc. CMOS gate stack structures and processes
US8995204B2 (en) 2011-06-23 2015-03-31 Suvolta, Inc. Circuit devices and methods having adjustable transistor body bias
US8629016B1 (en) 2011-07-26 2014-01-14 Suvolta, Inc. Multiple transistor types formed in a common epitaxial layer by differential out-diffusion from a doped underlayer
WO2013022753A2 (en) 2011-08-05 2013-02-14 Suvolta, Inc. Semiconductor devices having fin structures and fabrication methods thereof
US8748986B1 (en) 2011-08-05 2014-06-10 Suvolta, Inc. Electronic device with controlled threshold voltage
US8645878B1 (en) 2011-08-23 2014-02-04 Suvolta, Inc. Porting a circuit design from a first semiconductor process to a second semiconductor process
US8614128B1 (en) 2011-08-23 2013-12-24 Suvolta, Inc. CMOS structures and processes based on selective thinning
US8713511B1 (en) 2011-09-16 2014-04-29 Suvolta, Inc. Tools and methods for yield-aware semiconductor manufacturing process target generation
US9236466B1 (en) 2011-10-07 2016-01-12 Mie Fujitsu Semiconductor Limited Analog circuits having improved insulated gate transistors, and methods therefor
CN102637687B (en) * 2011-10-17 2015-06-17 上海华力微电子有限公司 Heterojunction 1T-DRAM (dynamic random access memory) structure on basis of buried-layer N-type trap and manufacturing method of 1T-DRAM structure
CN102856357B (en) * 2011-10-17 2015-07-22 上海华力微电子有限公司 Heterojunction 1T-DRAM (One Transistor Dynamic Random Access Memory) structure based on buried layer N-type trap and preparation method thereof
US8895327B1 (en) 2011-12-09 2014-11-25 Suvolta, Inc. Tipless transistors, short-tip transistors, and methods and circuits therefor
US8819603B1 (en) 2011-12-15 2014-08-26 Suvolta, Inc. Memory circuits and methods of making and designing the same
US8883600B1 (en) 2011-12-22 2014-11-11 Suvolta, Inc. Transistor having reduced junction leakage and methods of forming thereof
US8599623B1 (en) 2011-12-23 2013-12-03 Suvolta, Inc. Circuits and methods for measuring circuit elements in an integrated circuit device
US8970289B1 (en) 2012-01-23 2015-03-03 Suvolta, Inc. Circuits and devices for generating bi-directional body bias voltages, and methods therefor
US8877619B1 (en) 2012-01-23 2014-11-04 Suvolta, Inc. Process for manufacture of integrated circuits with different channel doping transistor architectures and devices therefrom
US9093550B1 (en) 2012-01-31 2015-07-28 Mie Fujitsu Semiconductor Limited Integrated circuits having a plurality of high-K metal gate FETs with various combinations of channel foundation structure and gate stack structure and methods of making same
US8648388B2 (en) * 2012-02-15 2014-02-11 International Business Machines Corporation High performance multi-finger strained silicon germanium channel PFET and method of fabrication
US9406567B1 (en) 2012-02-28 2016-08-02 Mie Fujitsu Semiconductor Limited Method for fabricating multiple transistor devices on a substrate with varying threshold voltages
US8863064B1 (en) 2012-03-23 2014-10-14 Suvolta, Inc. SRAM cell layout structure and devices therefrom
US9299698B2 (en) 2012-06-27 2016-03-29 Mie Fujitsu Semiconductor Limited Semiconductor structure with multiple transistors having various threshold voltages
US8637955B1 (en) 2012-08-31 2014-01-28 Suvolta, Inc. Semiconductor structure with reduced junction leakage and method of fabrication thereof
US9112057B1 (en) 2012-09-18 2015-08-18 Mie Fujitsu Semiconductor Limited Semiconductor devices with dopant migration suppression and method of fabrication thereof
US9041126B2 (en) 2012-09-21 2015-05-26 Mie Fujitsu Semiconductor Limited Deeply depleted MOS transistors having a screening layer and methods thereof
US9431068B2 (en) 2012-10-31 2016-08-30 Mie Fujitsu Semiconductor Limited Dynamic random access memory (DRAM) with low variation transistor peripheral circuits
US8816754B1 (en) 2012-11-02 2014-08-26 Suvolta, Inc. Body bias circuits and methods
US9093997B1 (en) 2012-11-15 2015-07-28 Mie Fujitsu Semiconductor Limited Slew based process and bias monitors and related methods
US20140159205A1 (en) * 2012-12-10 2014-06-12 Iman Rezanezhad Gatabi Low OFF-State Leakage Current Field Effect Transistors
US9070477B1 (en) 2012-12-12 2015-06-30 Mie Fujitsu Semiconductor Limited Bit interleaved low voltage static random access memory (SRAM) and related methods
US9112484B1 (en) 2012-12-20 2015-08-18 Mie Fujitsu Semiconductor Limited Integrated circuit process and bias monitors and related methods
US9268885B1 (en) 2013-02-28 2016-02-23 Mie Fujitsu Semiconductor Limited Integrated circuit device methods and models with predicted device metric variations
US9299801B1 (en) 2013-03-14 2016-03-29 Mie Fujitsu Semiconductor Limited Method for fabricating a transistor device with a tuned dopant profile
US9478571B1 (en) 2013-05-24 2016-10-25 Mie Fujitsu Semiconductor Limited Buried channel deeply depleted channel transistor
US9710006B2 (en) 2014-07-25 2017-07-18 Mie Fujitsu Semiconductor Limited Power up body bias circuits and methods
US9319013B2 (en) 2014-08-19 2016-04-19 Mie Fujitsu Semiconductor Limited Operational amplifier input offset correction with transistor threshold voltage adjustment
US10930791B2 (en) 2016-09-30 2021-02-23 Intel Corporation Systems, methods, and apparatuses for implementing bi-layer semiconducting oxides in source and drain for low access and contact resistance of thin film transistors

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4879256A (en) * 1985-06-05 1989-11-07 At&T Bell Laboratories Method of controlling the order-disorder state in a semiconductor device
US5155571A (en) 1990-08-06 1992-10-13 The Regents Of The University Of California Complementary field effect transistors having strained superlattice structure
US5965931A (en) 1993-04-19 1999-10-12 The Board Of Regents Of The University Of California Bipolar transistor having base region with coupled delta layers
US5539214A (en) 1995-02-06 1996-07-23 Regents Of The University Of California Quantum bridges fabricated by selective etching of superlattice structures
US5684737A (en) 1995-12-08 1997-11-04 The Regents Of The University Of California SRAM cell utilizing bistable diode having GeSi structure therein
US6399970B2 (en) * 1996-09-17 2002-06-04 Matsushita Electric Industrial Co., Ltd. FET having a Si/SiGeC heterojunction channel

Also Published As

Publication number Publication date
US6319799B1 (en) 2001-11-20
TW536825B (en) 2003-06-11
WO2001086713A1 (en) 2001-11-15

Similar Documents

Publication Publication Date Title
AU2001261306A1 (en) High mobility heterojunction transistor and method
AU2001286419A1 (en) Endourethral device and method
AU2002303301A1 (en) Bipolar transistors and high electron mobility transistors
AU2001277077A1 (en) Indium gallium nitride channel high electron mobility transistors, and method ofmaking the same
AU2001283138A1 (en) Gate technology for strained surface channel and strained buried channel mosfet devices
AU2001277001A1 (en) Heterojunction tunneling diodes and process for fabricating same
AU2001281098A1 (en) Tortuose path injection device and method
AU2001262348A1 (en) Lateral semiconductor device with low on-resistance and method of making the same
AU2002219163A1 (en) Cryostorage method and device
AU2001232647A1 (en) Methods and devices for treating stuttering problems
AU2001294188A1 (en) Device and method for manufacturing semiconductor
EP1202350A3 (en) Semiconductor device and manufacturing method thereof
AU2002315026A1 (en) Field-effect transistor and method of making the same
AU2002354162A1 (en) Lateral junctiion field-effect transistor and its manufacturing method
AU2001279850A1 (en) Method and arrangement for studsystem
AU2001236601A1 (en) Methods and devices for remediation and fermentation
EP1174916A3 (en) Semiconductor device and semiconductor device manufacturing method
AU3230801A (en) Semiconductor device fabrication method and semiconductor device fabrication device
AU2838200A (en) A lateral field effect transistor of sic, a method for production thereof and a use of such a transistor
EP1174914A3 (en) Semiconductor device and semiconductor device manufacturing method
AU2384101A (en) Thin-film transistor and its manufacturing method
AU2001268547A1 (en) Mosfet and method for fabrication of mosfet with buried gate
AU2001242793A1 (en) Semiconductor device and fabrication method therefor
AU2002219222A1 (en) Device and method for changing lines
AU2002346547A1 (en) Organic semiconductor and method