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AU2001283138A1 - Gate technology for strained surface channel and strained buried channel mosfet devices - Google Patents

Gate technology for strained surface channel and strained buried channel mosfet devices

Info

Publication number
AU2001283138A1
AU2001283138A1 AU2001283138A AU8313801A AU2001283138A1 AU 2001283138 A1 AU2001283138 A1 AU 2001283138A1 AU 2001283138 A AU2001283138 A AU 2001283138A AU 8313801 A AU8313801 A AU 8313801A AU 2001283138 A1 AU2001283138 A1 AU 2001283138A1
Authority
AU
Australia
Prior art keywords
strained
mosfet devices
gate technology
channel
channel mosfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001283138A
Inventor
Matthew Currie
Eugene A. Fitzgerald
Richard Hammond
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Amber Wave Systems Inc
Original Assignee
Amber Wave Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Amber Wave Systems Inc filed Critical Amber Wave Systems Inc
Publication of AU2001283138A1 publication Critical patent/AU2001283138A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/637—Lateral IGFETs having no inversion channels, e.g. buried channel lateral IGFETs, normally-on lateral IGFETs or depletion-mode lateral IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H10P14/2905—
    • H10P14/3211—
    • H10P14/3248—
    • H10P14/3254—
    • H10P14/3411—
    • H10D64/01342—
    • H10D64/01346—
    • H10D64/01352—
    • H10P14/3251—
    • H10P14/38—
AU2001283138A 2000-08-07 2001-08-06 Gate technology for strained surface channel and strained buried channel mosfet devices Abandoned AU2001283138A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US22359500P 2000-08-07 2000-08-07
US60223595 2000-08-07
PCT/US2001/024614 WO2002013262A2 (en) 2000-08-07 2001-08-06 Gate technology for strained surface channel and strained buried channel mosfet devices

Publications (1)

Publication Number Publication Date
AU2001283138A1 true AU2001283138A1 (en) 2002-02-18

Family

ID=22837179

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001283138A Abandoned AU2001283138A1 (en) 2000-08-07 2001-08-06 Gate technology for strained surface channel and strained buried channel mosfet devices

Country Status (5)

Country Link
US (5) US6583015B2 (en)
EP (1) EP1307917A2 (en)
JP (1) JP2004519090A (en)
AU (1) AU2001283138A1 (en)
WO (1) WO2002013262A2 (en)

Families Citing this family (108)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3535527B2 (en) * 1997-06-24 2004-06-07 マサチューセッツ インスティテュート オブ テクノロジー Controlling threading dislocations in germanium-on-silicon using graded GeSi layer and planarization
US7227176B2 (en) * 1998-04-10 2007-06-05 Massachusetts Institute Of Technology Etch stop layer system
US6518644B2 (en) * 2000-01-20 2003-02-11 Amberwave Systems Corporation Low threading dislocation density relaxed mismatched epilayers without high temperature growth
US6602613B1 (en) 2000-01-20 2003-08-05 Amberwave Systems Corporation Heterointegration of materials using deposition and bonding
JP2004519090A (en) * 2000-08-07 2004-06-24 アンバーウェーブ システムズ コーポレイション Gate technology for strained surface channel and strained buried channel MOSFET devices
JP2004507084A (en) * 2000-08-16 2004-03-04 マサチューセッツ　インスティテュート　オブ　テクノロジー Manufacturing process of semiconductor products using graded epitaxial growth
US6649480B2 (en) 2000-12-04 2003-11-18 Amberwave Systems Corporation Method of fabricating CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs
US20020100942A1 (en) * 2000-12-04 2002-08-01 Fitzgerald Eugene A. CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs
EP1421607A2 (en) 2001-02-12 2004-05-26 ASM America, Inc. Improved process for deposition of semiconductor films
US6703688B1 (en) 2001-03-02 2004-03-09 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6900103B2 (en) 2001-03-02 2005-05-31 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6723661B2 (en) * 2001-03-02 2004-04-20 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6593641B1 (en) * 2001-03-02 2003-07-15 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
WO2002071488A1 (en) * 2001-03-02 2002-09-12 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed cmos electronics and high speed analog circuits
US6830976B2 (en) 2001-03-02 2004-12-14 Amberwave Systems Corproation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6646322B2 (en) 2001-03-02 2003-11-11 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
WO2002071493A2 (en) * 2001-03-02 2002-09-12 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed cmos electronics and high speed analog
US6724008B2 (en) 2001-03-02 2004-04-20 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6940089B2 (en) 2001-04-04 2005-09-06 Massachusetts Institute Of Technology Semiconductor device structure
WO2002103760A2 (en) * 2001-06-14 2002-12-27 Amberware Systems Corporation Method of selective removal of sige alloys
US7301180B2 (en) 2001-06-18 2007-11-27 Massachusetts Institute Of Technology Structure and method for a high-speed semiconductor device having a Ge channel layer
WO2003001671A2 (en) 2001-06-21 2003-01-03 Amberwave Systems Corporation Improved enhancement of p-type metal-oxide-semiconductor field-effect transistors
JP2004538634A (en) 2001-08-06 2004-12-24 マサチューセッツ　インスティテュート　オブ　テクノロジー Semiconductor substrate having strained layer and method for forming the same
US6974735B2 (en) 2001-08-09 2005-12-13 Amberwave Systems Corporation Dual layer Semiconductor Devices
US7138649B2 (en) * 2001-08-09 2006-11-21 Amberwave Systems Corporation Dual-channel CMOS transistors with differentially strained channels
EP1428262A2 (en) * 2001-09-21 2004-06-16 Amberwave Systems Corporation Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same
WO2003028106A2 (en) 2001-09-24 2003-04-03 Amberwave Systems Corporation Rf circuits including transistors having strained material layers
JP3970011B2 (en) * 2001-12-11 2007-09-05 シャープ株式会社 Semiconductor device and manufacturing method thereof
AU2003222003A1 (en) 2002-03-14 2003-09-29 Amberwave Systems Corporation Methods for fabricating strained layers on semiconductor substrates
US7307273B2 (en) 2002-06-07 2007-12-11 Amberwave Systems Corporation Control of strain in device layers by selective relaxation
US7615829B2 (en) 2002-06-07 2009-11-10 Amberwave Systems Corporation Elevated source and drain elements for strained-channel heterojuntion field-effect transistors
US6995430B2 (en) 2002-06-07 2006-02-07 Amberwave Systems Corporation Strained-semiconductor-on-insulator device structures
US7335545B2 (en) 2002-06-07 2008-02-26 Amberwave Systems Corporation Control of strain in device layers by prevention of relaxation
US7138310B2 (en) 2002-06-07 2006-11-21 Amberwave Systems Corporation Semiconductor devices having strained dual channel layers
US20030227057A1 (en) 2002-06-07 2003-12-11 Lochtefeld Anthony J. Strained-semiconductor-on-insulator device structures
US7074623B2 (en) 2002-06-07 2006-07-11 Amberwave Systems Corporation Methods of forming strained-semiconductor-on-insulator finFET device structures
WO2003105206A1 (en) 2002-06-10 2003-12-18 Amberwave Systems Corporation Growing source and drain elements by selecive epitaxy
US6982474B2 (en) 2002-06-25 2006-01-03 Amberwave Systems Corporation Reacted conductive gate electrodes
US6680496B1 (en) * 2002-07-08 2004-01-20 Amberwave Systems Corp. Back-biasing to populate strained layer quantum wells
US6841457B2 (en) * 2002-07-16 2005-01-11 International Business Machines Corporation Use of hydrogen implantation to improve material properties of silicon-germanium-on-insulator material made by thermal diffusion
US7186630B2 (en) 2002-08-14 2007-03-06 Asm America, Inc. Deposition of amorphous silicon-containing films
US6646318B1 (en) * 2002-08-15 2003-11-11 National Semiconductor Corporation Bandgap tuned vertical color imager cell
US7375385B2 (en) * 2002-08-23 2008-05-20 Amberwave Systems Corporation Semiconductor heterostructures having reduced dislocation pile-ups
US6878610B1 (en) * 2002-08-27 2005-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Relaxed silicon germanium substrate with low defect density
US20040137698A1 (en) * 2002-08-29 2004-07-15 Gianni Taraschi Fabrication system and method for monocrystaline semiconductor on a substrate
US7594967B2 (en) 2002-08-30 2009-09-29 Amberwave Systems Corporation Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy
US7071014B2 (en) * 2002-10-30 2006-07-04 Amberwave Systems Corporation Methods for preserving strained semiconductor substrate layers during CMOS processing
US6730576B1 (en) * 2002-12-31 2004-05-04 Advanced Micro Devices, Inc. Method of forming a thick strained silicon layer and semiconductor structures incorporating a thick strained silicon layer
EP1588406B1 (en) 2003-01-27 2019-07-10 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structures with structural homogeneity
JP4585510B2 (en) 2003-03-07 2010-11-24 台湾積體電路製造股▲ふん▼有限公司 Shallow trench isolation process
US6963078B2 (en) * 2003-03-15 2005-11-08 International Business Machines Corporation Dual strain-state SiGe layers for microelectronics
US20040206951A1 (en) * 2003-04-18 2004-10-21 Mirabedini Mohammad R. Ion implantation in channel region of CMOS device for enhanced carrier mobility
US6982229B2 (en) * 2003-04-18 2006-01-03 Lsi Logic Corporation Ion recoil implantation and enhanced carrier mobility in CMOS device
KR100679737B1 (en) * 2003-05-19 2007-02-07 도시바세라믹스가부시키가이샤 Manufacturing Method of Silicon Substrate Having Distortion Layer
US7026249B2 (en) * 2003-05-30 2006-04-11 International Business Machines Corporation SiGe lattice engineering using a combination of oxidation, thinning and epitaxial regrowth
US7208362B2 (en) * 2003-06-25 2007-04-24 Texas Instruments Incorporated Transistor device containing carbon doped silicon in a recess next to MDD to create strain in channel
US7176041B2 (en) * 2003-07-01 2007-02-13 Samsung Electronics Co., Ltd. PAA-based etchant, methods of using same, and resultant structures
US7164182B2 (en) 2003-07-07 2007-01-16 Micron Technology, Inc. Pixel with strained silicon layer for improving carrier mobility and blue response in imagers
US6803240B1 (en) * 2003-09-03 2004-10-12 International Business Machines Corporation Method of measuring crystal defects in thin Si/SiGe bilayers
US6872641B1 (en) * 2003-09-23 2005-03-29 International Business Machines Corporation Strained silicon on relaxed sige film with uniform misfit dislocation density
TWI242237B (en) * 2003-10-16 2005-10-21 Ind Tech Res Inst A manufacturing method and structure for relation strained sige
US6955932B2 (en) * 2003-10-29 2005-10-18 International Business Machines Corporation Single and double-gate pseudo-FET devices for semiconductor materials evaluation
US7370787B2 (en) * 2003-12-15 2008-05-13 Pratt & Whitney Canada Corp. Compressor rotor and method for making
US7244654B2 (en) * 2003-12-31 2007-07-17 Texas Instruments Incorporated Drive current improvement from recessed SiGe incorporation close to gate
US7224007B1 (en) * 2004-01-12 2007-05-29 Advanced Micro Devices, Inc. Multi-channel transistor with tunable hot carrier effect
US6995078B2 (en) * 2004-01-23 2006-02-07 Chartered Semiconductor Manufacturing Ltd. Method of forming a relaxed semiconductor buffer layer on a substrate with a large lattice mismatch
US7166522B2 (en) * 2004-01-23 2007-01-23 Chartered Semiconductor Manufacturing Ltd. Method of forming a relaxed semiconductor buffer layer on a substrate with a large lattice mismatch
US7060539B2 (en) * 2004-03-01 2006-06-13 International Business Machines Corporation Method of manufacture of FinFET devices with T-shaped fins and devices manufactured thereby
JP3884439B2 (en) * 2004-03-02 2007-02-21 株式会社東芝 Semiconductor device
US7018882B2 (en) * 2004-03-23 2006-03-28 Sharp Laboratories Of America, Inc. Method to form local “silicon-on-nothing” or “silicon-on-insulator” wafers with tensile-strained silicon
FR2872626B1 (en) * 2004-07-05 2008-05-02 Commissariat Energie Atomique METHOD FOR CONTRAINDING A THIN PATTERN
US7060579B2 (en) * 2004-07-29 2006-06-13 Texas Instruments Incorporated Increased drive current by isotropic recess etch
US7901688B2 (en) * 2004-08-03 2011-03-08 Transtech Pharma, Inc. Rage fusion proteins
US20060105559A1 (en) * 2004-11-15 2006-05-18 International Business Machines Corporation Ultrathin buried insulators in Si or Si-containing material
US7547605B2 (en) * 2004-11-22 2009-06-16 Taiwan Semiconductor Manufacturing Company Microelectronic device and a method for its manufacture
US7393733B2 (en) 2004-12-01 2008-07-01 Amberwave Systems Corporation Methods of forming hybrid fin field-effect transistor structures
US7479431B2 (en) * 2004-12-17 2009-01-20 Intel Corporation Strained NMOS transistor featuring deep carbon doped regions and raised donor doped source and drain
US7438760B2 (en) * 2005-02-04 2008-10-21 Asm America, Inc. Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition
US20060234455A1 (en) * 2005-04-19 2006-10-19 Chien-Hao Chen Structures and methods for forming a locally strained transistor
JP2007036134A (en) * 2005-07-29 2007-02-08 Toshiba Corp Manufacturing method of semiconductor wafer and semiconductor device
US7348225B2 (en) * 2005-10-27 2008-03-25 International Business Machines Corporation Structure and method of fabricating FINFET with buried channel
US20070105516A1 (en) * 2005-11-10 2007-05-10 Hickman Barton T Automatic compensation of gain versus temperature
JP2009521801A (en) * 2005-12-22 2009-06-04 エーエスエム アメリカ インコーポレイテッド Epitaxial deposition of doped semiconductor materials.
US8900980B2 (en) 2006-01-20 2014-12-02 Taiwan Semiconductor Manufacturing Company, Ltd. Defect-free SiGe source/drain formation by epitaxy-free process
US8278176B2 (en) 2006-06-07 2012-10-02 Asm America, Inc. Selective epitaxial formation of semiconductor films
US9252981B2 (en) * 2006-06-13 2016-02-02 At&T Intellectual Property I, L.P. Method and apparatus for processing a communication request from a roaming voice over IP terminal
US7989901B2 (en) 2007-04-27 2011-08-02 Taiwan Semiconductor Manufacturing Company, Ltd. MOS devices with improved source/drain regions with SiGe
US7759199B2 (en) * 2007-09-19 2010-07-20 Asm America, Inc. Stressor for engineered strain on channel
FR2921515B1 (en) * 2007-09-25 2010-07-30 Commissariat Energie Atomique METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURES USEFUL FOR PRODUCING SEMICONDUCTOR-OVER-INSULATING SUBSTRATES, AND APPLICATIONS THEREOF
US7939447B2 (en) * 2007-10-26 2011-05-10 Asm America, Inc. Inhibitors for selective deposition of silicon containing films
US7655543B2 (en) * 2007-12-21 2010-02-02 Asm America, Inc. Separate injection of reactive species in selective formation of films
US8453913B2 (en) 2009-02-06 2013-06-04 Covidien Lp Anvil for surgical stapler
US8486191B2 (en) * 2009-04-07 2013-07-16 Asm America, Inc. Substrate reactor with adjustable injectors for mixing gases within reaction chamber
US8367528B2 (en) 2009-11-17 2013-02-05 Asm America, Inc. Cyclical epitaxial deposition and etch
US8809170B2 (en) 2011-05-19 2014-08-19 Asm America Inc. High throughput cyclical epitaxial deposition and etch process
US9059321B2 (en) 2012-05-14 2015-06-16 International Business Machines Corporation Buried channel field-effect transistors
US9041062B2 (en) 2013-09-19 2015-05-26 International Business Machines Corporation Silicon-on-nothing FinFETs
CN103940885B (en) * 2014-03-18 2017-11-28 复旦大学 Ion-sensitive field effect transistor and its preparation technology
US20160141360A1 (en) * 2014-11-19 2016-05-19 International Business Machines Corporation Iii-v semiconductor devices with selective oxidation
US9899274B2 (en) 2015-03-16 2018-02-20 International Business Machines Corporation Low-cost SOI FinFET technology
US9443953B1 (en) 2015-08-24 2016-09-13 International Business Machines Corporation Sacrificial silicon germanium channel for inversion oxide thickness scaling with mitigated work function roll-off and improved negative bias temperature instability
US10529738B2 (en) * 2016-04-28 2020-01-07 Globalfoundries Singapore Pte. Ltd. Integrated circuits with selectively strained device regions and methods for fabricating same
KR102710507B1 (en) 2016-12-14 2024-09-25 삼성전자주식회사 Etching composition and method for fabricating semiconductor device by using the same
US11875997B2 (en) 2017-04-11 2024-01-16 Entegris, Inc. Formulations to selectively etch silicon-germanium relative to silicon
KR102480348B1 (en) 2018-03-15 2022-12-23 삼성전자주식회사 Pre-treatment composition before etching SiGe and method of fabricating a semiconductor device
CN109950153B (en) * 2019-03-08 2022-03-04 中国科学院微电子研究所 Semiconductor structure and manufacturing method thereof
US11952268B2 (en) 2021-06-14 2024-04-09 Lawrence Semiconductor Research Laboratory, Inc. Engineered substrates, free-standing semiconductor microstructures, and related systems and methods
US20230402529A1 (en) * 2022-06-13 2023-12-14 Electronics And Telecommunications Research Institute Semiconductor device and method of manufacturing the same

Family Cites Families (82)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3542482A1 (en) * 1985-11-30 1987-06-04 Licentia Gmbh MODULATION-Doped FIELD EFFECT TRANSISTOR
US4920076A (en) * 1988-04-15 1990-04-24 The United States Of America As Represented By The United States Department Of Energy Method for enhancing growth of SiO2 in Si by the implantation of germanium
DE3816358A1 (en) * 1988-05-13 1989-11-23 Eurosil Electronic Gmbh NON-VOLATILE STORAGE CELL AND METHOD FOR THE PRODUCTION THEREOF
US4958318A (en) * 1988-07-08 1990-09-18 Eliyahou Harari Sidewall capacitor DRAM cell
US5241197A (en) * 1989-01-25 1993-08-31 Hitachi, Ltd. Transistor provided with strained germanium layer
US5312766A (en) * 1991-03-06 1994-05-17 National Semiconductor Corporation Method of providing lower contact resistance in MOS transistors
US5442205A (en) * 1991-04-24 1995-08-15 At&T Corp. Semiconductor heterostructure devices with strained semiconductor layers
US5166084A (en) * 1991-09-03 1992-11-24 Motorola, Inc. Process for fabricating a silicon on insulator field effect transistor
US5291439A (en) * 1991-09-12 1994-03-01 International Business Machines Corporation Semiconductor memory cell and memory array with inversion layer
JPH05121317A (en) * 1991-10-24 1993-05-18 Rohm Co Ltd Method for forming soi structure
US5467305A (en) * 1992-03-12 1995-11-14 International Business Machines Corporation Three-dimensional direct-write EEPROM arrays and fabrication methods
US5212110A (en) * 1992-05-26 1993-05-18 Motorola, Inc. Method for forming isolation regions in a semiconductor device
US5461250A (en) 1992-08-10 1995-10-24 International Business Machines Corporation SiGe thin film or SOI MOSFET and method for making the same
US5386132A (en) * 1992-11-02 1995-01-31 Wong; Chun C. D. Multimedia storage system with highly compact memory device
US5418743A (en) * 1992-12-07 1995-05-23 Nippon Steel Corporation Method of writing into non-volatile semiconductor memory
US5523592A (en) * 1993-02-03 1996-06-04 Hitachi, Ltd. Semiconductor optical device, manufacturing method for the same, and opto-electronic integrated circuit using the same
US5792679A (en) * 1993-08-30 1998-08-11 Sharp Microelectronics Technology, Inc. Method for forming silicon-germanium/Si/silicon dioxide heterostructure using germanium implant
US5461243A (en) * 1993-10-29 1995-10-24 International Business Machines Corporation Substrate for tensilely strained semiconductor
US5534713A (en) * 1994-05-20 1996-07-09 International Business Machines Corporation Complementary metal-oxide semiconductor transistor logic using strained SI/SIGE heterostructure layers
US6218677B1 (en) * 1994-08-15 2001-04-17 Texas Instruments Incorporated III-V nitride resonant tunneling
US5561302A (en) * 1994-09-26 1996-10-01 Motorola, Inc. Enhanced mobility MOSFET device and method
US5777347A (en) * 1995-03-07 1998-07-07 Hewlett-Packard Company Vertical CMOS digital multi-valued restoring logic device
US5920088A (en) * 1995-06-16 1999-07-06 Interuniversitair Micro-Electronica Centrum (Imec Vzw) Vertical MISFET devices
DE19533313A1 (en) * 1995-09-08 1997-03-13 Max Planck Gesellschaft Semiconductor transistor device structure for e.g. CMOS FET
JP3403877B2 (en) * 1995-10-25 2003-05-06 三菱電機株式会社 Semiconductor memory device and manufacturing method thereof
JP3217015B2 (en) 1996-07-18 2001-10-09 インターナショナル・ビジネス・マシーンズ・コーポレーション Method for forming field effect transistor
US6191432B1 (en) * 1996-09-02 2001-02-20 Kabushiki Kaisha Toshiba Semiconductor device and memory device
US5847419A (en) * 1996-09-17 1998-12-08 Kabushiki Kaisha Toshiba Si-SiGe semiconductor device and method of fabricating the same
US6399970B2 (en) * 1996-09-17 2002-06-04 Matsushita Electric Industrial Co., Ltd. FET having a Si/SiGeC heterojunction channel
DE59707274D1 (en) * 1996-09-27 2002-06-20 Infineon Technologies Ag Integrated CMOS circuit arrangement and method for its production
US5780922A (en) * 1996-11-27 1998-07-14 The Regents Of The University Of California Ultra-low phase noise GE MOSFETs
US5808344A (en) * 1996-12-13 1998-09-15 International Business Machines Corporation Single-transistor logic and CMOS inverters
EP0867701A1 (en) 1997-03-28 1998-09-30 Interuniversitair Microelektronica Centrum Vzw Method of fabrication of an infrared radiation detector and more particularly an infrared sensitive bolometer
US5891769A (en) * 1997-04-07 1999-04-06 Motorola, Inc. Method for forming a semiconductor device having a heteroepitaxial layer
US5906951A (en) * 1997-04-30 1999-05-25 International Business Machines Corporation Strained Si/SiGe layers on insulator
DE19720008A1 (en) * 1997-05-13 1998-11-19 Siemens Ag Integrated CMOS circuit arrangement and method for its production
JP3535527B2 (en) * 1997-06-24 2004-06-07 マサチューセッツ インスティテュート オブ テクノロジー Controlling threading dislocations in germanium-on-silicon using graded GeSi layer and planarization
US5936274A (en) * 1997-07-08 1999-08-10 Micron Technology, Inc. High density flash memory
US5981400A (en) * 1997-09-18 1999-11-09 Cornell Research Foundation, Inc. Compliant universal substrate for epitaxial growth
US5963817A (en) * 1997-10-16 1999-10-05 International Business Machines Corporation Bulk and strained silicon on insulator using local selective oxidation
US6154475A (en) * 1997-12-04 2000-11-28 The United States Of America As Represented By The Secretary Of The Air Force Silicon-based strain-symmetrized GE-SI quantum lasers
JP3447939B2 (en) * 1997-12-10 2003-09-16 株式会社東芝 Nonvolatile semiconductor memory and data reading method
FR2773177B1 (en) * 1997-12-29 2000-03-17 France Telecom PROCESS FOR OBTAINING A SINGLE-CRYSTAL GERMANIUM OR SILICON LAYER ON A SILICON OR SINGLE-CRYSTAL GERMANIUM SUBSTRATE, RESPECTIVELY, AND MULTILAYER PRODUCTS OBTAINED
US6013134A (en) * 1998-02-18 2000-01-11 International Business Machines Corporation Advance integrated chemical vapor deposition (AICVD) for semiconductor devices
US6689211B1 (en) * 1999-04-09 2004-02-10 Massachusetts Institute Of Technology Etch stop layer system
JP4258034B2 (en) * 1998-05-27 2009-04-30 ソニー株式会社 Semiconductor device and manufacturing method of semiconductor device
JP3403076B2 (en) * 1998-06-30 2003-05-06 株式会社東芝 Semiconductor device and manufacturing method thereof
JP2000031491A (en) 1998-07-14 2000-01-28 Hitachi Ltd Semiconductor device, method of manufacturing semiconductor device, semiconductor substrate, and method of manufacturing semiconductor substrate
US6130453A (en) * 1999-01-04 2000-10-10 International Business Machines Corporation Flash memory structure with floating gate in vertical trench
US6162688A (en) 1999-01-14 2000-12-19 Advanced Micro Devices, Inc. Method of fabricating a transistor with a dielectric underlayer and device incorporating same
AU3346000A (en) 1999-01-15 2000-08-01 Regents Of The University Of California, The Polycrystalline silicon germanium films for forming micro-electromechanical systems
US6074919A (en) 1999-01-20 2000-06-13 Advanced Micro Devices, Inc. Method of forming an ultrathin gate dielectric
US6350993B1 (en) * 1999-03-12 2002-02-26 International Business Machines Corporation High speed composite p-channel Si/SiGe heterostructure for field effect devices
JP3595718B2 (en) * 1999-03-15 2004-12-02 株式会社東芝 Display element and method of manufacturing the same
US6103559A (en) 1999-03-30 2000-08-15 Amd, Inc. (Advanced Micro Devices) Method of making disposable channel masking for both source/drain and LDD implant and subsequent gate fabrication
US6251755B1 (en) * 1999-04-22 2001-06-26 International Business Machines Corporation High resolution dopant/impurity incorporation in semiconductors via a scanned atomic force probe
US6151248A (en) * 1999-06-30 2000-11-21 Sandisk Corporation Dual floating gate EEPROM cell array with steering gates shared by adjacent cells
US6204529B1 (en) * 1999-08-27 2001-03-20 Hsing Lan Lung 8 bit per cell non-volatile semiconductor memory structure utilizing trench technology and dielectric floating gate
US6339232B1 (en) * 1999-09-20 2002-01-15 Kabushika Kaisha Toshiba Semiconductor device
US6559040B1 (en) * 1999-10-20 2003-05-06 Taiwan Semiconductor Manufacturing Company Process for polishing the top surface of a polysilicon gate
US6249022B1 (en) * 1999-10-22 2001-06-19 United Microelectronics Corp. Trench flash memory with nitride spacers for electron trapping
US6551399B1 (en) * 2000-01-10 2003-04-22 Genus Inc. Fully integrated process for MIM capacitors using atomic layer deposition
DE10025264A1 (en) * 2000-05-22 2001-11-29 Max Planck Gesellschaft Field effect transistor based on embedded cluster structures and method for its production
JP3546169B2 (en) * 2000-05-26 2004-07-21 三菱重工業株式会社 Semiconductor device and manufacturing method thereof
JP2004519090A (en) * 2000-08-07 2004-06-24 アンバーウェーブ システムズ コーポレイション Gate technology for strained surface channel and strained buried channel MOSFET devices
US6649480B2 (en) * 2000-12-04 2003-11-18 Amberwave Systems Corporation Method of fabricating CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs
US20020100942A1 (en) * 2000-12-04 2002-08-01 Fitzgerald Eugene A. CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs
EP1399970A2 (en) * 2000-12-04 2004-03-24 Amberwave Systems Corporation Cmos inverter circuits utilizing strained silicon surface channel mosfets
KR100391988B1 (en) * 2001-02-09 2003-07-22 삼성전자주식회사 DRAM cell and fabrication method thereof
US6646322B2 (en) * 2001-03-02 2003-11-11 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6723661B2 (en) * 2001-03-02 2004-04-20 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6724008B2 (en) * 2001-03-02 2004-04-20 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6348407B1 (en) * 2001-03-15 2002-02-19 Chartered Semiconductor Manufacturing Inc. Method to improve adhesion of organic dielectrics in dual damascene interconnects
US6531324B2 (en) * 2001-03-28 2003-03-11 Sharp Laboratories Of America, Inc. MFOS memory transistor & method of fabricating same
US6603156B2 (en) * 2001-03-31 2003-08-05 International Business Machines Corporation Strained silicon on insulator structures
US6468869B1 (en) * 2001-05-11 2002-10-22 Macronix International Co., Ltd. Method of fabricating mask read only memory
WO2002103760A2 (en) * 2001-06-14 2002-12-27 Amberware Systems Corporation Method of selective removal of sige alloys
US7301180B2 (en) * 2001-06-18 2007-11-27 Massachusetts Institute Of Technology Structure and method for a high-speed semiconductor device having a Ge channel layer
WO2003001671A2 (en) * 2001-06-21 2003-01-03 Amberwave Systems Corporation Improved enhancement of p-type metal-oxide-semiconductor field-effect transistors
US6974735B2 (en) * 2001-08-09 2005-12-13 Amberwave Systems Corporation Dual layer Semiconductor Devices
US6541321B1 (en) * 2002-05-14 2003-04-01 Advanced Micro Devices, Inc. Method of making transistors with gate insulation layers of differing thickness
US7169226B2 (en) * 2003-07-01 2007-01-30 International Business Machines Corporation Defect reduction by oxidation of silicon

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WO2002013262A2 (en) 2002-02-14
US7217668B2 (en) 2007-05-15
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US20030207571A1 (en) 2003-11-06
WO2002013262A3 (en) 2002-05-02

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