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AU2002228766A1 - Semiconductor device and method of making same - Google Patents

Semiconductor device and method of making same

Info

Publication number
AU2002228766A1
AU2002228766A1 AU2002228766A AU2876602A AU2002228766A1 AU 2002228766 A1 AU2002228766 A1 AU 2002228766A1 AU 2002228766 A AU2002228766 A AU 2002228766A AU 2876602 A AU2876602 A AU 2876602A AU 2002228766 A1 AU2002228766 A1 AU 2002228766A1
Authority
AU
Australia
Prior art keywords
semiconductor device
making same
making
same
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002228766A
Inventor
Paul G. Carey
Patrick M. Smith
Steven D. Theiss
Paul Wickboldt
Jesse D. Wolfe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of California San Diego UCSD
Original Assignee
University of California
University of California Berkeley
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of California, University of California Berkeley filed Critical University of California
Publication of AU2002228766A1 publication Critical patent/AU2002228766A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
AU2002228766A 2000-11-03 2001-11-01 Semiconductor device and method of making same Abandoned AU2002228766A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/705,484 2000-11-03
US09/705,484 US6642085B1 (en) 2000-11-03 2000-11-03 Thin film transistors on plastic substrates with reflective coatings for radiation protection
PCT/US2001/046268 WO2002037570A2 (en) 2000-11-03 2001-11-01 Semiconductor device and method of making same

Publications (1)

Publication Number Publication Date
AU2002228766A1 true AU2002228766A1 (en) 2002-05-15

Family

ID=24833669

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002228766A Abandoned AU2002228766A1 (en) 2000-11-03 2001-11-01 Semiconductor device and method of making same

Country Status (7)

Country Link
US (2) US6642085B1 (en)
JP (1) JP2004536441A (en)
KR (1) KR20030048457A (en)
CN (1) CN100380680C (en)
AU (1) AU2002228766A1 (en)
TW (1) TW518765B (en)
WO (1) WO2002037570A2 (en)

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* Cited by examiner, † Cited by third party
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US6983338B2 (en) * 2003-04-01 2006-01-03 Dell Products L.P. Coupling device for connectors wherein coupling device comprises multiplexer unit for selectiving first mode for SATA channel and second mode that establishes loop back function
WO2005039814A2 (en) 2003-09-26 2005-05-06 Optomec Design Company Laser processing for heat-sensitive mesoscale deposition
KR20050073855A (en) * 2004-01-12 2005-07-18 삼성전자주식회사 Flexible display and manufacturing method thereof
US7427776B2 (en) * 2004-10-07 2008-09-23 Hewlett-Packard Development Company, L.P. Thin-film transistor and methods
TWI279848B (en) * 2004-11-04 2007-04-21 Ind Tech Res Inst Structure and method for forming a heat-prevented layer on plastic substrate
KR100684176B1 (en) 2004-12-16 2007-02-20 한국전자통신연구원 Low temperature active driving display device and manufacturing method thereof
WO2007038164A2 (en) * 2005-09-23 2007-04-05 Nanosys, Inc. Methods for nanostructure doping
US7622374B2 (en) * 2005-12-29 2009-11-24 Infineon Technologies Ag Method of fabricating an integrated circuit
TWI319625B (en) * 2006-11-30 2010-01-11 Tpo Displays Corp Image display system and manufacturing method of multi-gates thin film transistor
US20090155963A1 (en) * 2007-12-12 2009-06-18 Hawkins Gilbert A Forming thin film transistors using ablative films
US8410712B2 (en) * 2008-07-09 2013-04-02 Ncc Nano, Llc Method and apparatus for curing thin films on low-temperature substrates at high speeds
CN102544347B (en) * 2011-10-08 2015-06-03 昆明理工大学 Quick-response photo-thermal induced voltage thin-film material and application
TWI493725B (en) 2012-07-18 2015-07-21 E Ink Holdings Inc Semiconductor structure
KR102373901B1 (en) 2013-09-13 2022-03-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Light-emitting device
US9786790B2 (en) * 2015-12-10 2017-10-10 Industrial Technology Research Institute Flexible device
KR101985007B1 (en) * 2017-05-15 2019-06-03 아주대학교산학협력단 In-situ Terahertz Spectroscopy for Monitoring Thin film Crystallization

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4683277A (en) * 1986-07-02 1987-07-28 Dow Corning Corporation Method for preparing vinyl terminated fluorine-containing polydiorganosiloxane
US5130263A (en) 1990-04-17 1992-07-14 General Electric Company Method for photolithographically forming a selfaligned mask using back-side exposure and a non-specular reflecting layer
US5102830A (en) 1990-07-24 1992-04-07 Micron Technology, Inc. Integrated circuit fabrication process for preventing overprocessing during a laser scan
US5326426A (en) 1991-11-14 1994-07-05 Tam Andrew C Undercut membrane mask for high energy photon patterning
JP3321890B2 (en) 1992-06-23 2002-09-09 ソニー株式会社 Method of forming semiconductor crystal and semiconductor element
US5265114C1 (en) 1992-09-10 2001-08-21 Electro Scient Ind Inc System and method for selectively laser processing a target structure of one or more materials of a multimaterial multilayer device
US5346850A (en) * 1992-10-29 1994-09-13 Regents Of The University Of California Crystallization and doping of amorphous silicon on low temperature plastic
US5360491A (en) 1993-04-07 1994-11-01 The United States Of America As Represented By The United States Department Of Energy β-silicon carbide protective coating and method for fabricating same
US5360752A (en) 1993-10-28 1994-11-01 Loral Federal Systems Company Method to radiation harden the buried oxide in silicon-on-insulator structures
JP3478012B2 (en) * 1995-09-29 2003-12-10 ソニー株式会社 Method for manufacturing thin film semiconductor device
US5817550A (en) 1996-03-05 1998-10-06 Regents Of The University Of California Method for formation of thin film transistors on plastic substrates
US5807771A (en) 1996-06-04 1998-09-15 Raytheon Company Radiation-hard, low power, sub-micron CMOS on a SOI substrate
US5918140A (en) 1997-06-16 1999-06-29 The Regents Of The University Of California Deposition of dopant impurities and pulsed energy drive-in
TW396602B (en) * 1997-06-30 2000-07-01 Hyundai Electronics Ind Highly integrated memory cell and method of manufacturing thereof
US6107641A (en) 1997-09-10 2000-08-22 Xerox Corporation Thin film transistor with reduced parasitic capacitance and reduced feed-through voltage
US6236061B1 (en) * 1999-01-08 2001-05-22 Lakshaman Mahinda Walpita Semiconductor crystallization on composite polymer substrates
US6306694B1 (en) * 1999-03-12 2001-10-23 Semiconductor Energy Laboratory Co., Ltd. Process of fabricating a semiconductor device

Also Published As

Publication number Publication date
KR20030048457A (en) 2003-06-19
CN1471732A (en) 2004-01-28
US20040016926A1 (en) 2004-01-29
WO2002037570A9 (en) 2003-02-13
US7112846B2 (en) 2006-09-26
CN100380680C (en) 2008-04-09
TW518765B (en) 2003-01-21
WO2002037570A3 (en) 2003-06-05
WO2002037570A2 (en) 2002-05-10
JP2004536441A (en) 2004-12-02
US6642085B1 (en) 2003-11-04

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