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AU2001277077A1 - Indium gallium nitride channel high electron mobility transistors, and method ofmaking the same - Google Patents

Indium gallium nitride channel high electron mobility transistors, and method ofmaking the same

Info

Publication number
AU2001277077A1
AU2001277077A1 AU2001277077A AU7707701A AU2001277077A1 AU 2001277077 A1 AU2001277077 A1 AU 2001277077A1 AU 2001277077 A AU2001277077 A AU 2001277077A AU 7707701 A AU7707701 A AU 7707701A AU 2001277077 A1 AU2001277077 A1 AU 2001277077A1
Authority
AU
Australia
Prior art keywords
same
gallium nitride
electron mobility
high electron
indium gallium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001277077A
Inventor
Edwin L. Piner
Joan M. Redwing
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Technology Materials Inc
Original Assignee
Advanced Technology Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Technology Materials Inc filed Critical Advanced Technology Materials Inc
Publication of AU2001277077A1 publication Critical patent/AU2001277077A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
AU2001277077A 2000-08-07 2001-07-23 Indium gallium nitride channel high electron mobility transistors, and method ofmaking the same Abandoned AU2001277077A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09633598 2000-08-07
US09/633,598 US6727531B1 (en) 2000-08-07 2000-08-07 Indium gallium nitride channel high electron mobility transistors, and method of making the same
PCT/US2001/023052 WO2002013273A1 (en) 2000-08-07 2001-07-23 Indium gallium nitride channel high electron mobility transistors, and method of making the same

Publications (1)

Publication Number Publication Date
AU2001277077A1 true AU2001277077A1 (en) 2002-02-18

Family

ID=24540298

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001277077A Abandoned AU2001277077A1 (en) 2000-08-07 2001-07-23 Indium gallium nitride channel high electron mobility transistors, and method ofmaking the same

Country Status (6)

Country Link
US (2) US6727531B1 (en)
EP (1) EP1314204A4 (en)
JP (1) JP5259906B2 (en)
KR (1) KR100863762B1 (en)
AU (1) AU2001277077A1 (en)
WO (1) WO2002013273A1 (en)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5179694B2 (en) * 2000-06-02 2013-04-10 マイクロガン ゲーエムベーハー Heterostructure doped with donor on the back side
US6727531B1 (en) * 2000-08-07 2004-04-27 Advanced Technology Materials, Inc. Indium gallium nitride channel high electron mobility transistors, and method of making the same
US6784074B2 (en) * 2001-05-09 2004-08-31 Nsc-Nanosemiconductor Gmbh Defect-free semiconductor templates for epitaxial growth and method of making same
EP1421626A2 (en) * 2001-08-07 2004-05-26 Jan Kuzmik High electron mobility devices
US7470941B2 (en) * 2001-12-06 2008-12-30 Hrl Laboratories, Llc High power-low noise microwave GaN heterojunction field effect transistor
US7268375B2 (en) * 2003-10-27 2007-09-11 Sensor Electronic Technology, Inc. Inverted nitride-based semiconductor structure
US7432142B2 (en) * 2004-05-20 2008-10-07 Cree, Inc. Methods of fabricating nitride-based transistors having regrown ohmic contact regions
US7253454B2 (en) * 2005-03-03 2007-08-07 Cree, Inc. High electron mobility transistor
US20070052048A1 (en) * 2005-09-08 2007-03-08 Raytheon Company Strain compensated high electron mobility transistor
JP5362187B2 (en) * 2006-03-30 2013-12-11 日本碍子株式会社 Semiconductor element
US20090072269A1 (en) * 2007-09-17 2009-03-19 Chang Soo Suh Gallium nitride diodes and integrated components
US8519438B2 (en) 2008-04-23 2013-08-27 Transphorm Inc. Enhancement mode III-N HEMTs
US8289065B2 (en) 2008-09-23 2012-10-16 Transphorm Inc. Inductive load power switching circuits
US7898004B2 (en) 2008-12-10 2011-03-01 Transphorm Inc. Semiconductor heterostructure diodes
US8742459B2 (en) * 2009-05-14 2014-06-03 Transphorm Inc. High voltage III-nitride semiconductor devices
US8390000B2 (en) 2009-08-28 2013-03-05 Transphorm Inc. Semiconductor devices with field plates
US8389977B2 (en) 2009-12-10 2013-03-05 Transphorm Inc. Reverse side engineered III-nitride devices
US10592902B2 (en) * 2010-01-22 2020-03-17 Verient Inc. Systems and methods for enhanced transaction processing
KR101626463B1 (en) 2010-02-26 2016-06-02 삼성전자주식회사 Method of manufacturing high electron mobility transistor
US8742460B2 (en) 2010-12-15 2014-06-03 Transphorm Inc. Transistors with isolation regions
US8643062B2 (en) 2011-02-02 2014-02-04 Transphorm Inc. III-N device structures and methods
US8772842B2 (en) 2011-03-04 2014-07-08 Transphorm, Inc. Semiconductor diodes with low reverse bias currents
US8716141B2 (en) 2011-03-04 2014-05-06 Transphorm Inc. Electrode configurations for semiconductor devices
TWI424565B (en) * 2011-08-31 2014-01-21 Univ Feng Chia Semiconductor device
US8901604B2 (en) 2011-09-06 2014-12-02 Transphorm Inc. Semiconductor devices with guard rings
US9257547B2 (en) 2011-09-13 2016-02-09 Transphorm Inc. III-N device structures having a non-insulating substrate
US8598937B2 (en) 2011-10-07 2013-12-03 Transphorm Inc. High power semiconductor electronic components with increased reliability
US9165766B2 (en) 2012-02-03 2015-10-20 Transphorm Inc. Buffer layer structures suited for III-nitride devices with foreign substrates
US9093366B2 (en) 2012-04-09 2015-07-28 Transphorm Inc. N-polar III-nitride transistors
US9184275B2 (en) 2012-06-27 2015-11-10 Transphorm Inc. Semiconductor devices with integrated hole collectors
US9525054B2 (en) * 2013-01-04 2016-12-20 Taiwan Semiconductor Manufacturing Company, Ltd. High electron mobility transistor and method of forming the same
CN105164811B (en) 2013-02-15 2018-08-31 创世舫电子有限公司 Electrode of semiconductor devices and forming method thereof
US9087718B2 (en) 2013-03-13 2015-07-21 Transphorm Inc. Enhancement-mode III-nitride devices
US9245993B2 (en) 2013-03-15 2016-01-26 Transphorm Inc. Carbon doping semiconductor devices
US9530708B1 (en) 2013-05-31 2016-12-27 Hrl Laboratories, Llc Flexible electronic circuit and method for manufacturing same
WO2015009514A1 (en) 2013-07-19 2015-01-22 Transphorm Inc. Iii-nitride transistor including a p-type depleting layer
US9318593B2 (en) 2014-07-21 2016-04-19 Transphorm Inc. Forming enhancement mode III-nitride devices
US9536966B2 (en) 2014-12-16 2017-01-03 Transphorm Inc. Gate structures for III-N devices
US9536967B2 (en) 2014-12-16 2017-01-03 Transphorm Inc. Recessed ohmic contacts in a III-N device
US9666683B2 (en) 2015-10-09 2017-05-30 Taiwan Semiconductor Manufacturing Company, Ltd. Surface treatment and passivation for high electron mobility transistors
JP6888013B2 (en) 2016-01-15 2021-06-16 トランスフォーム テクノロジー，インコーポレーテッド Enhancement Mode Group III Nitride Devices with AL (1-x) Si (x) O-Gate Insulators
WO2017210323A1 (en) 2016-05-31 2017-12-07 Transphorm Inc. Iii-nitride devices including a graded depleting layer
US11101379B2 (en) 2016-11-16 2021-08-24 Theregenis Of The University Of California Structure for increasing mobility in a high electron mobility transistor
JP2019067786A (en) 2017-09-28 2019-04-25 株式会社東芝 High output element

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5028968A (en) * 1990-01-02 1991-07-02 The Aerospace Corporation Radiation hard GaAs high electron mobility transistor
US5270798A (en) * 1990-02-20 1993-12-14 Varian Associates, Inc. High electron mobility transistor
US5192987A (en) 1991-05-17 1993-03-09 Apa Optics, Inc. High electron mobility transistor with GaN/Alx Ga1-x N heterojunctions
US5448084A (en) * 1991-05-24 1995-09-05 Raytheon Company Field effect transistors on spinel substrates
US5670798A (en) * 1995-03-29 1997-09-23 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same
US5625202A (en) 1995-06-08 1997-04-29 University Of Central Florida Modified wurtzite structure oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth
US5821576A (en) 1995-10-18 1998-10-13 Northrop Grumman Corporation Silicon carbide power field effect transistor
US5668387A (en) * 1995-10-26 1997-09-16 Trw Inc. Relaxed channel high electron mobility transistor
DE19613265C1 (en) * 1996-04-02 1997-04-17 Siemens Ag Circuit element, e.g. laser diode
JP3449116B2 (en) * 1996-05-16 2003-09-22 ソニー株式会社 Semiconductor device
JP3467153B2 (en) 1996-08-30 2003-11-17 株式会社リコー Semiconductor element
US5825796A (en) * 1996-09-25 1998-10-20 Picolight Incorporated Extended wavelength strained layer lasers having strain compensated layers
KR100571071B1 (en) * 1996-12-04 2006-06-21 소니 가부시끼 가이샤 Field effect transistor and method for manufacturing the same
JPH10189944A (en) * 1996-12-24 1998-07-21 Furukawa Electric Co Ltd:The High electron mobility transistor
EP1017113B1 (en) * 1997-01-09 2012-08-22 Nichia Corporation Nitride semiconductor device
US5856217A (en) 1997-04-10 1999-01-05 Hughes Electronics Corporation Modulation-doped field-effect transistors and fabrication processes
JPH10294452A (en) * 1997-04-22 1998-11-04 Sony Corp Heterojunction field effect transistor
JP3752810B2 (en) * 1997-11-26 2006-03-08 昭和電工株式会社 Epitaxial wafer, manufacturing method thereof, and semiconductor device
JPH11261053A (en) * 1998-03-09 1999-09-24 Furukawa Electric Co Ltd:The High mobility transistor
JP3369464B2 (en) 1998-03-19 2003-01-20 日本電信電話株式会社 Semiconductor device
JP3470054B2 (en) * 1998-12-28 2003-11-25 シャープ株式会社 Nitride III-V compound semiconductor device
JP4186032B2 (en) 2000-06-29 2008-11-26 日本電気株式会社 Semiconductor device
US6727531B1 (en) * 2000-08-07 2004-04-27 Advanced Technology Materials, Inc. Indium gallium nitride channel high electron mobility transistors, and method of making the same

Also Published As

Publication number Publication date
USRE44538E1 (en) 2013-10-15
KR20030023742A (en) 2003-03-19
JP2004515909A (en) 2004-05-27
JP5259906B2 (en) 2013-08-07
WO2002013273A1 (en) 2002-02-14
EP1314204A4 (en) 2005-01-05
KR100863762B1 (en) 2008-10-16
US6727531B1 (en) 2004-04-27
EP1314204A1 (en) 2003-05-28

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