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AU2001249568A1 - Method of manufacturing a heterojunction bicmos integrated circuit - Google Patents

Method of manufacturing a heterojunction bicmos integrated circuit

Info

Publication number
AU2001249568A1
AU2001249568A1 AU2001249568A AU4956801A AU2001249568A1 AU 2001249568 A1 AU2001249568 A1 AU 2001249568A1 AU 2001249568 A AU2001249568 A AU 2001249568A AU 4956801 A AU4956801 A AU 4956801A AU 2001249568 A1 AU2001249568 A1 AU 2001249568A1
Authority
AU
Australia
Prior art keywords
manufacturing
integrated circuit
bicmos integrated
heterojunction bicmos
heterojunction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001249568A
Inventor
Vida Ilderem Burger
Phillip W. Dahl
Jay P. John
Michael H. Kaneshiro
James A. Kirchgessner
Ik-Sung Lim
Richard W. Mauntel
John W. Steele
David L. Stolfa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of AU2001249568A1 publication Critical patent/AU2001249568A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
AU2001249568A 2000-03-30 2001-03-28 Method of manufacturing a heterojunction bicmos integrated circuit Abandoned AU2001249568A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/539,130 US6461925B1 (en) 2000-03-30 2000-03-30 Method of manufacturing a heterojunction BiCMOS integrated circuit
US09539130 2000-03-30
PCT/US2001/009995 WO2001075968A2 (en) 2000-03-30 2001-03-28 Method of manufacturing a heterojunction bicmos integrated circuit

Publications (1)

Publication Number Publication Date
AU2001249568A1 true AU2001249568A1 (en) 2001-10-15

Family

ID=24149914

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001249568A Abandoned AU2001249568A1 (en) 2000-03-30 2001-03-28 Method of manufacturing a heterojunction bicmos integrated circuit

Country Status (6)

Country Link
US (1) US6461925B1 (en)
EP (1) EP1273036B1 (en)
CN (1) CN1197148C (en)
AU (1) AU2001249568A1 (en)
DE (1) DE60134220D1 (en)
WO (1) WO2001075968A2 (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6426265B1 (en) * 2001-01-30 2002-07-30 International Business Machines Corporation Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
US6642607B2 (en) * 2001-02-05 2003-11-04 Matsushita Electric Industrial Co., Ltd. Semiconductor device
FR2822292B1 (en) * 2001-03-14 2003-07-18 St Microelectronics Sa METHOD FOR MANUFACTURING A DOUBLE POLYSILICON-TYPE BIPOLAR TRANSISTOR HETEROJUNCTION BASED AND CORRESPONDING TRANSISTOR
US20050250289A1 (en) * 2002-10-30 2005-11-10 Babcock Jeffrey A Control of dopant diffusion from buried layers in bipolar integrated circuits
JP2003168687A (en) * 2001-11-30 2003-06-13 Nec Electronics Corp Registration pattern and manufacturing method thereof
US20040194541A1 (en) * 2002-06-10 2004-10-07 The Procter & Gamble Company High-Q LC circuit moisture sensor
US6911369B2 (en) * 2003-02-12 2005-06-28 Taiwan Semiconductor Manufacturing Company, Ltd. Discontinuity prevention for SiGe deposition
US7517768B2 (en) * 2003-03-31 2009-04-14 Intel Corporation Method for fabricating a heterojunction bipolar transistor
JP2005005580A (en) * 2003-06-13 2005-01-06 Renesas Technology Corp Semiconductor device
US7038298B2 (en) * 2003-06-24 2006-05-02 International Business Machines Corporation High fT and fmax bipolar transistor and method of making same
TW200524139A (en) * 2003-12-24 2005-07-16 Renesas Tech Corp Voltage generating circuit and semiconductor integrated circuit
DE102005021932A1 (en) * 2005-05-12 2006-11-16 Atmel Germany Gmbh Method for producing integrated circuits
TW200849556A (en) * 2006-06-14 2008-12-16 Nxp Bv Semiconductor device and method of manufacturing such a device
CN102403344B (en) * 2010-09-10 2013-09-11 上海华虹Nec电子有限公司 Parasitic PNP bipolar transistor in silicon germanium BiCMOS (bipolar complementary metal oxide semiconductor) process
DE102017216214B4 (en) * 2017-09-13 2019-05-09 Infineon Technologies Ag Method for producing a combined semiconductor device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2193036B (en) * 1986-07-24 1990-05-02 Mitsubishi Electric Corp Method of fabricating a semiconductor integrated circuit device
JP2569058B2 (en) * 1987-07-10 1997-01-08 株式会社日立製作所 Semiconductor device
KR890011103A (en) * 1987-12-04 1989-08-12 미다 가쓰시게 Manufacturing method of semiconductor integrated circuit device
JPH01282857A (en) * 1988-05-10 1989-11-14 Seiko Epson Corp Semiconductor device and manufacture of the same
JPH025463A (en) * 1988-06-24 1990-01-10 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof
JPH0348457A (en) * 1989-04-14 1991-03-01 Toshiba Corp Semiconductor device and manufacture thereof
JP2590295B2 (en) * 1990-06-06 1997-03-12 株式会社東芝 Semiconductor device and manufacturing method thereof
JPH10135238A (en) * 1996-11-05 1998-05-22 Sony Corp Semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
EP1273036A2 (en) 2003-01-08
EP1273036B1 (en) 2008-05-28
US6461925B1 (en) 2002-10-08
DE60134220D1 (en) 2008-07-10
WO2001075968A2 (en) 2001-10-11
CN1197148C (en) 2005-04-13
WO2001075968A3 (en) 2002-05-16
CN1422439A (en) 2003-06-04

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