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GB2193036B - Method of fabricating a semiconductor integrated circuit device - Google Patents

Method of fabricating a semiconductor integrated circuit device

Info

Publication number
GB2193036B
GB2193036B GB8717473A GB8717473A GB2193036B GB 2193036 B GB2193036 B GB 2193036B GB 8717473 A GB8717473 A GB 8717473A GB 8717473 A GB8717473 A GB 8717473A GB 2193036 B GB2193036 B GB 2193036B
Authority
GB
United Kingdom
Prior art keywords
fabricating
integrated circuit
semiconductor integrated
circuit device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB8717473A
Other versions
GB2193036A (en
GB8717473D0 (en
Inventor
Tadashi Hirao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP61174861A external-priority patent/JPH0734452B2/en
Priority claimed from JP61180597A external-priority patent/JPS6337642A/en
Priority claimed from JP61216730A external-priority patent/JPH0734453B2/en
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of GB8717473D0 publication Critical patent/GB8717473D0/en
Publication of GB2193036A publication Critical patent/GB2193036A/en
Application granted granted Critical
Publication of GB2193036B publication Critical patent/GB2193036B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
    • H10D64/0113—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H10P32/1414—
    • H10P32/171—
GB8717473A 1986-07-24 1987-07-23 Method of fabricating a semiconductor integrated circuit device Expired - Lifetime GB2193036B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP61174861A JPH0734452B2 (en) 1986-07-24 1986-07-24 Method for manufacturing semiconductor integrated circuit device
JP61180597A JPS6337642A (en) 1986-07-31 1986-07-31 Semiconductor integrated circuit device
JP61216730A JPH0734453B2 (en) 1986-09-12 1986-09-12 Method for manufacturing semiconductor integrated circuit device

Publications (3)

Publication Number Publication Date
GB8717473D0 GB8717473D0 (en) 1987-08-26
GB2193036A GB2193036A (en) 1988-01-27
GB2193036B true GB2193036B (en) 1990-05-02

Family

ID=27324011

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8717473A Expired - Lifetime GB2193036B (en) 1986-07-24 1987-07-23 Method of fabricating a semiconductor integrated circuit device

Country Status (1)

Country Link
GB (1) GB2193036B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0610430B1 (en) * 1991-10-30 1999-03-10 Harris Corporation Analog-to-digital converter and method of fabrication
US6265752B1 (en) * 1999-05-25 2001-07-24 Taiwan Semiconductor Manufacturing, Co., Inc. Method of forming a HVNMOS with an N+ buried layer combined with N well and a structure of the same
US6461925B1 (en) * 2000-03-30 2002-10-08 Motorola, Inc. Method of manufacturing a heterojunction BiCMOS integrated circuit
US6875648B1 (en) * 2004-07-09 2005-04-05 Atmel Corporation Fabrication of an EEPROM cell with emitter-polysilicon source/drain regions

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0052450A1 (en) * 1980-10-29 1982-05-26 Fujitsu Limited Method of manufacturing a semiconductor device with polycrystalline semiconductor cum metal electrodes
GB2179792A (en) * 1985-08-28 1987-03-11 Mitsubishi Electric Corp Bipolar transistor
EP0252206A2 (en) * 1986-07-09 1988-01-13 Hitachi, Ltd. Method of fabricating semiconductor structure

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0052450A1 (en) * 1980-10-29 1982-05-26 Fujitsu Limited Method of manufacturing a semiconductor device with polycrystalline semiconductor cum metal electrodes
GB2179792A (en) * 1985-08-28 1987-03-11 Mitsubishi Electric Corp Bipolar transistor
EP0252206A2 (en) * 1986-07-09 1988-01-13 Hitachi, Ltd. Method of fabricating semiconductor structure

Also Published As

Publication number Publication date
GB2193036A (en) 1988-01-27
GB8717473D0 (en) 1987-08-26

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Legal Events

Date Code Title Description
746 Register noted 'licences of right' (sect. 46/1977)

Effective date: 19950810

PE20 Patent expired after termination of 20 years

Effective date: 20070722