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AU2001278412A1 - Methods for producing passive components on a semiconductor substrate - Google Patents

Methods for producing passive components on a semiconductor substrate

Info

Publication number
AU2001278412A1
AU2001278412A1 AU2001278412A AU7841201A AU2001278412A1 AU 2001278412 A1 AU2001278412 A1 AU 2001278412A1 AU 2001278412 A AU2001278412 A AU 2001278412A AU 7841201 A AU7841201 A AU 7841201A AU 2001278412 A1 AU2001278412 A1 AU 2001278412A1
Authority
AU
Australia
Prior art keywords
methods
semiconductor substrate
passive components
producing passive
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001278412A
Inventor
Dag Behammer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
United Monolithic Semiconductors GmbH
Original Assignee
United Monolithic Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Monolithic Semiconductors GmbH filed Critical United Monolithic Semiconductors GmbH
Publication of AU2001278412A1 publication Critical patent/AU2001278412A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H10D86/85—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors characterised by only passive components
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base
AU2001278412A 2000-08-14 2001-08-01 Methods for producing passive components on a semiconductor substrate Abandoned AU2001278412A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10039710 2000-08-14
DE10039710.7A DE10039710B4 (en) 2000-08-14 2000-08-14 Method for producing passive components on a semiconductor substrate
PCT/DE2001/002925 WO2002015273A2 (en) 2000-08-14 2001-08-01 Methods for producing passive components on a semiconductor substrate

Publications (1)

Publication Number Publication Date
AU2001278412A1 true AU2001278412A1 (en) 2002-02-25

Family

ID=7652399

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001278412A Abandoned AU2001278412A1 (en) 2000-08-14 2001-08-01 Methods for producing passive components on a semiconductor substrate

Country Status (8)

Country Link
US (1) US7059041B2 (en)
EP (1) EP1312118B1 (en)
JP (1) JP4873596B2 (en)
CN (1) CN1447985A (en)
AU (1) AU2001278412A1 (en)
DE (1) DE10039710B4 (en)
TW (1) TWI290726B (en)
WO (1) WO2002015273A2 (en)

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US20060167985A1 (en) * 2001-04-26 2006-07-27 Albanese Michael J Network-distributed data routing
PH12012502439A1 (en) 2001-06-26 2013-06-17 Amgen Inc Antibodies to opgl
JP2006517191A (en) * 2002-12-30 2006-07-20 アムジエン・インコーポレーテツド Combination therapy using costimulatory factors
KR100630706B1 (en) * 2004-10-21 2006-10-02 삼성전자주식회사 Semiconductor integrated circuit with resistor and manufacturing method thereof
JP2007028283A (en) * 2005-07-19 2007-02-01 Matsushita Electric Ind Co Ltd Imaging device
PE20070684A1 (en) 2005-11-14 2007-08-06 Amgen Inc RANKL-PTH / PTHrP ANTIBODY CHEMERICAL MOLECULES
US9331057B2 (en) * 2007-10-26 2016-05-03 Infineon Technologies Ag Semiconductor device
DE102010008603A1 (en) * 2010-02-19 2011-08-25 OSRAM Opto Semiconductors GmbH, 93055 Electrical resistance element
US20130119435A1 (en) * 2011-11-15 2013-05-16 Avago Technologies Wiresess IP (Singapore) Pte. Ltd. Dielectric dummification for enhanced planarization with spin-on dielectrics
US9246592B2 (en) * 2013-08-19 2016-01-26 International Business Machines Corporation Structured substrate for optical fiber alignment
US10083781B2 (en) 2015-10-30 2018-09-25 Vishay Dale Electronics, Llc Surface mount resistors and methods of manufacturing same
US9530834B1 (en) 2015-12-13 2016-12-27 United Microelectronics Corp. Capacitor and method for fabricating the same
US10438729B2 (en) 2017-11-10 2019-10-08 Vishay Dale Electronics, Llc Resistor with upper surface heat dissipation

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US3430334A (en) * 1965-04-01 1969-03-04 Hitachi Ltd Method of manufacturing integrated circuits
US3616282A (en) * 1968-11-14 1971-10-26 Hewlett Packard Co Method of producing thin-film circuit elements
US3607679A (en) * 1969-05-05 1971-09-21 Bell Telephone Labor Inc Method for the fabrication of discrete rc structure
DE2044255B2 (en) * 1970-09-07 1973-09-06 PROCESS FOR PRODUCING THIN FILM RESISTOR NETWORKS
US3718565A (en) * 1970-11-27 1973-02-27 Bell Telephone Labor Inc Technique for the fabrication of discrete rc structure
US3649945A (en) * 1971-01-20 1972-03-14 Fairchild Camera Instr Co Thin film resistor contact
US3778689A (en) * 1972-05-22 1973-12-11 Hewlett Packard Co Thin film capacitors and method for manufacture
US3988824A (en) * 1972-05-22 1976-11-02 Hewlett-Packard Company Method for manufacturing thin film circuits
US3997411A (en) * 1973-06-20 1976-12-14 Siemens Aktiengesellschaft Method for the production of a thin film electric circuit
GB1424980A (en) * 1973-06-20 1976-02-11 Siemens Ag Thin-film electrical circuits
US3996551A (en) * 1975-10-20 1976-12-07 The United States Of America As Represented By The Secretary Of The Navy Chromium-silicon oxide thin film resistors
US4251326A (en) * 1978-12-28 1981-02-17 Western Electric Company, Inc. Fabricating an RC network utilizing alpha tantalum
US4344223A (en) * 1980-11-26 1982-08-17 Western Electric Company, Inc. Monolithic hybrid integrated circuits
JPS61129853A (en) * 1984-11-29 1986-06-17 Nec Corp Manufacture of hybrid ic
IT1197776B (en) * 1986-07-15 1988-12-06 Gte Telecom Spa PROCESS FOR OBTAINING THIN LAYER PASSIVE CIRCUITS WITH RESISTIVE LINES TO DIFFERENT LAYER RESISTANCE AND PASSIVE CIRCUIT REALIZED WITH THE ABOVE PROCESS
US4801469A (en) * 1986-08-07 1989-01-31 The United States Of America As Represented By The Department Of Energy Process for obtaining multiple sheet resistances for thin film hybrid microcircuit resistors
US4878770A (en) * 1987-09-09 1989-11-07 Analog Devices, Inc. IC chips with self-aligned thin film resistors
JP2626060B2 (en) * 1989-06-10 1997-07-02 株式会社デンソー Semiconductor device and manufacturing method thereof
US5120572A (en) * 1990-10-30 1992-06-09 Microelectronics And Computer Technology Corporation Method of fabricating electrical components in high density substrates
US5440174A (en) * 1992-10-20 1995-08-08 Matsushita Electric Industrial Co., Ltd. Plurality of passive elements in a semiconductor integrated circuit and semiconductor integrated circuit in which passive elements are arranged
US5514612A (en) * 1993-03-03 1996-05-07 California Micro Devices, Inc. Method of making a semiconductor device with integrated RC network and schottky diode
TW367621B (en) * 1995-02-27 1999-08-21 Nxp Bv Electronic component comprising a thin-film structure with passive elements
US5618749A (en) * 1995-03-31 1997-04-08 Yamaha Corporation Method of forming a semiconductor device having a capacitor and a resistor
DE19531629C1 (en) * 1995-08-28 1997-01-09 Siemens Ag Method of manufacturing an EEPROM semiconductor structure
JP3039495B2 (en) * 1997-11-14 2000-05-08 日本電気株式会社 Semiconductor storage device
JP3055523B2 (en) * 1998-04-02 2000-06-26 日本電気株式会社 Method for manufacturing semiconductor device
JP2001203327A (en) * 2000-01-21 2001-07-27 Sony Corp Method for manufacturing electronic member having capacitance element and resistance element, method for manufacturing semiconductor device, and semiconductor device

Also Published As

Publication number Publication date
CN1447985A (en) 2003-10-08
WO2002015273A2 (en) 2002-02-21
EP1312118B1 (en) 2013-10-16
DE10039710A1 (en) 2002-03-07
EP1312118A2 (en) 2003-05-21
JP4873596B2 (en) 2012-02-08
US20040080919A1 (en) 2004-04-29
US7059041B2 (en) 2006-06-13
DE10039710B4 (en) 2017-06-22
WO2002015273A3 (en) 2002-05-10
JP2004507090A (en) 2004-03-04
TWI290726B (en) 2007-12-01
US20050052855A9 (en) 2005-03-10

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