[go: up one dir, main page]

NO974001L - Halvledersubstrat med passiveringsfilm - Google Patents

Halvledersubstrat med passiveringsfilm

Info

Publication number
NO974001L
NO974001L NO974001A NO974001A NO974001L NO 974001 L NO974001 L NO 974001L NO 974001 A NO974001 A NO 974001A NO 974001 A NO974001 A NO 974001A NO 974001 L NO974001 L NO 974001L
Authority
NO
Norway
Prior art keywords
passivation film
layer
substrate
semiconductor substrate
sin
Prior art date
Application number
NO974001A
Other languages
English (en)
Other versions
NO320484B1 (no
NO974001D0 (no
Inventor
Hiroyuki Seto
Shogo Yoshida
Original Assignee
Murata Manufacturing Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP23153596A external-priority patent/JP3246348B2/ja
Priority claimed from JP23153696A external-priority patent/JP3259641B2/ja
Application filed by Murata Manufacturing Co filed Critical Murata Manufacturing Co
Publication of NO974001D0 publication Critical patent/NO974001D0/no
Publication of NO974001L publication Critical patent/NO974001L/no
Publication of NO320484B1 publication Critical patent/NO320484B1/no

Links

Classifications

    • H10P14/60—
    • H10W74/147—
    • H10W74/137—
    • H10W74/43—

Landscapes

  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

Halvlederinnretning i form av et sub-strat (2) med en pålagt passiveringsfilm (3, 9) på en overflate. Filmen har et SiON-lag (4, 10) i kontakt med substrat-overflaten, og et SiN-lag (5, 11) på yttersiden av SiON-laget.Passiveringsfilmen har særlig et ytterste lag (11) av SiN, og dette lag har en del i kontakt med substratet (2) eller det blottlagte areal (111, 112) av SiON-laget (107) er nitrert.Substratet har god heftstyrke mellom passiveringsfilmen (3, 9) og substratover-flaten, og man har oppnådd god motstands-dyktighet overfor fuktighet.
NO19974001A 1996-09-02 1997-09-01 Halvlederinnretning med passiveringsfilm NO320484B1 (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP23153596A JP3246348B2 (ja) 1996-09-02 1996-09-02 半導体装置の保護膜構造
JP23153696A JP3259641B2 (ja) 1996-09-02 1996-09-02 半導体装置の保護膜構造

Publications (3)

Publication Number Publication Date
NO974001D0 NO974001D0 (no) 1997-09-01
NO974001L true NO974001L (no) 1998-03-03
NO320484B1 NO320484B1 (no) 2005-12-12

Family

ID=26529938

Family Applications (1)

Application Number Title Priority Date Filing Date
NO19974001A NO320484B1 (no) 1996-09-02 1997-09-01 Halvlederinnretning med passiveringsfilm

Country Status (5)

Country Link
US (1) US6388310B1 (no)
EP (1) EP0827199A3 (no)
KR (1) KR100370916B1 (no)
CA (1) CA2213034C (no)
NO (1) NO320484B1 (no)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2783530B1 (fr) * 1998-09-21 2001-08-31 Commissariat Energie Atomique Procede de preparation, par nitruration, d'un substrat de silicium pour la formation d'une couche isolante mince
JP2004527107A (ja) * 2001-01-30 2004-09-02 メイコム インコーポレイテッド 高電圧半導体デバイス
US7012328B2 (en) * 2004-05-14 2006-03-14 Intevac, Inc. Semiconductor die attachment for high vacuum tubes
US7607560B2 (en) 2004-05-14 2009-10-27 Intevac, Inc. Semiconductor die attachment for high vacuum tubes
JP2006043813A (ja) * 2004-08-04 2006-02-16 Denso Corp 保護膜付きマイクロシステム構造体及びその製造方法
JP4898497B2 (ja) * 2006-03-27 2012-03-14 キヤノン株式会社 有機発光装置およびその製造方法
US20070262379A1 (en) * 2006-05-15 2007-11-15 Chin-Chuan Lai Metal structure of glass substrate and formation thereof
US10297557B2 (en) * 2017-06-30 2019-05-21 Sanken Electric Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
JP6846687B2 (ja) * 2017-09-12 2021-03-24 パナソニックＩｐマネジメント株式会社 半導体装置およびその製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4097889A (en) * 1976-11-01 1978-06-27 Rca Corporation Combination glass/low temperature deposited Siw Nx Hy O.sub.z
DE2967538D1 (en) * 1978-06-14 1985-12-05 Fujitsu Ltd Process for producing a semiconductor device having an insulating layer of silicon dioxide covered by a film of silicon oxynitride
US4438157A (en) * 1980-12-05 1984-03-20 Ncr Corporation Process for forming MNOS dual dielectric structure
JPS63184340A (ja) * 1986-09-08 1988-07-29 Nec Corp 半導体装置
JPH01187933A (ja) * 1988-01-22 1989-07-27 Mitsubishi Electric Corp 半導体装置の製造方法
JPH01228135A (ja) 1988-03-09 1989-09-12 Nec Corp 半導体装置
US4959705A (en) * 1988-10-17 1990-09-25 Ford Microelectronics, Inc. Three metal personalization of application specific monolithic microwave integrated circuit
JPH03268430A (ja) 1990-03-19 1991-11-29 Kawasaki Steel Corp 半導体装置の保護膜構造
JP2814009B2 (ja) * 1990-06-05 1998-10-22 三菱電機株式会社 半導体装置の製造方法
JPH0645316A (ja) 1992-07-23 1994-02-18 Nec Corp 半導体装置およびその製造方法
JPH0845926A (ja) * 1994-07-26 1996-02-16 Sony Corp 半導体装置およびその製造方法
US5472913A (en) * 1994-08-05 1995-12-05 Texas Instruments Incorporated Method of fabricating porous dielectric material with a passivation layer for electronics applications
US5710067A (en) * 1995-06-07 1998-01-20 Advanced Micro Devices, Inc. Silicon oxime film
US5686329A (en) * 1995-12-29 1997-11-11 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming a metal oxide semiconductor field effect transistor (MOSFET) having improved hot carrier immunity
US5869396A (en) * 1996-07-15 1999-02-09 Chartered Semiconductor Manufacturing Ltd. Method for forming a polycide gate electrode
JP3268430B2 (ja) 1997-02-26 2002-03-25 ホシデン株式会社 ジャック

Also Published As

Publication number Publication date
EP0827199A2 (en) 1998-03-04
CA2213034A1 (en) 1998-03-02
EP0827199A3 (en) 2005-10-19
KR100370916B1 (ko) 2003-03-15
NO320484B1 (no) 2005-12-12
KR19980024277A (ko) 1998-07-06
NO974001D0 (no) 1997-09-01
CA2213034C (en) 2002-12-17
US6388310B1 (en) 2002-05-14

Similar Documents

Publication Publication Date Title
KR930005167A (ko) 반도체 장치
TW592386U (en) Mounting structure of semiconductor chip and semiconductor device
TW345753B (en) Electrode pad in p-conductive-type III-group nitride semiconductor, element with electrode pad, and its manufacturing method
WO2004015771A3 (en) Semiconductor device and method of manufacturing the same
NO974001L (no) Halvledersubstrat med passiveringsfilm
EP1005086A3 (en) Metal foil having bumps, circuit substrate having the metal foil, and semiconductor device having the circuit substrate
NO170266C (no) Vanntett membranstruktur
ATE47505T1 (de) Monolithisch integrierte halbleiterschaltung.
EP0400566A3 (en) Adhesive tapes and semiconductor devices
TW354855B (en) Connecting structure of semiconductor element
DE69942457D1 (de) Fahrgastdetector
MY147594A (en) Wafer-adhering adhesive tape
EP0318954A3 (en) Semiconductor device having a composite insulating interlayer
DE69727546D1 (de) Für Infrarotstrahlung durchsichtige Struktur, die eine für Infrarotstrahlung durchsichtige Polymerschicht enthält
KR900005593A (ko) 반도체장치
AU2003274530A1 (en) Integrated circuit with at least one bump
EP0802564A3 (en) Semiconductor device having high resistive element including high melting point metal
JPS6439035A (en) Semiconductor device
TW200603300A (en) Chip structure
JPS51128278A (en) Integrated circuit with resistance element
FR2767966B1 (fr) Dispositif a circuit integre securise et procede de fabrication
KR980003724A (ko) 액정 표시장치
JPS562663A (en) Input output protective device for semiconductor ic
JPS6482656A (en) Sealing structure for hybrid integrated circuit
JPS5736859A (en) Integrated circuit device