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NO974001L - Semiconductor substrate with passivation film - Google Patents

Semiconductor substrate with passivation film

Info

Publication number
NO974001L
NO974001L NO974001A NO974001A NO974001L NO 974001 L NO974001 L NO 974001L NO 974001 A NO974001 A NO 974001A NO 974001 A NO974001 A NO 974001A NO 974001 L NO974001 L NO 974001L
Authority
NO
Norway
Prior art keywords
passivation film
layer
substrate
semiconductor substrate
sin
Prior art date
Application number
NO974001A
Other languages
Norwegian (no)
Other versions
NO320484B1 (en
NO974001D0 (en
Inventor
Hiroyuki Seto
Shogo Yoshida
Original Assignee
Murata Manufacturing Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP23153596A external-priority patent/JP3246348B2/en
Priority claimed from JP23153696A external-priority patent/JP3259641B2/en
Application filed by Murata Manufacturing Co filed Critical Murata Manufacturing Co
Publication of NO974001D0 publication Critical patent/NO974001D0/en
Publication of NO974001L publication Critical patent/NO974001L/en
Publication of NO320484B1 publication Critical patent/NO320484B1/en

Links

Classifications

    • H10P14/60—
    • H10W74/147—
    • H10W74/137—
    • H10W74/43—

Landscapes

  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

Halvlederinnretning i form av et sub-strat (2) med en pålagt passiveringsfilm (3, 9) på en overflate. Filmen har et SiON-lag (4, 10) i kontakt med substrat-overflaten, og et SiN-lag (5, 11) på yttersiden av SiON-laget.Passiveringsfilmen har særlig et ytterste lag (11) av SiN, og dette lag har en del i kontakt med substratet (2) eller det blottlagte areal (111, 112) av SiON-laget (107) er nitrert.Substratet har god heftstyrke mellom passiveringsfilmen (3, 9) og substratover-flaten, og man har oppnådd god motstands-dyktighet overfor fuktighet.Semiconductor device in the form of a substrate (2) with an applied passivation film (3, 9) on a surface. The film has a SiON layer (4, 10) in contact with the substrate surface, and a SiN layer (5, 11) on the outside of the SiON layer. In particular, the passivation film has an outer layer (11) of SiN, and this layer has a part in contact with the substrate (2) or the exposed area (111, 112) of the SiON layer (107) is nitrated. The substrate has good adhesive strength between the passivation film (3, 9) and the substrate surface, and good resistance to moisture.

NO19974001A 1996-09-02 1997-09-01 Semiconductor device with passivation film NO320484B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP23153596A JP3246348B2 (en) 1996-09-02 1996-09-02 Protective film structure of semiconductor device
JP23153696A JP3259641B2 (en) 1996-09-02 1996-09-02 Protective film structure of semiconductor device

Publications (3)

Publication Number Publication Date
NO974001D0 NO974001D0 (en) 1997-09-01
NO974001L true NO974001L (en) 1998-03-03
NO320484B1 NO320484B1 (en) 2005-12-12

Family

ID=26529938

Family Applications (1)

Application Number Title Priority Date Filing Date
NO19974001A NO320484B1 (en) 1996-09-02 1997-09-01 Semiconductor device with passivation film

Country Status (5)

Country Link
US (1) US6388310B1 (en)
EP (1) EP0827199A3 (en)
KR (1) KR100370916B1 (en)
CA (1) CA2213034C (en)
NO (1) NO320484B1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2783530B1 (en) * 1998-09-21 2001-08-31 Commissariat Energie Atomique PROCESS FOR THE PREPARATION, BY NITRURATION, OF A SILICON SUBSTRATE FOR THE FORMATION OF A THIN INSULATION LAYER
JP2004527107A (en) * 2001-01-30 2004-09-02 メイコム インコーポレイテッド High voltage semiconductor devices
US7012328B2 (en) * 2004-05-14 2006-03-14 Intevac, Inc. Semiconductor die attachment for high vacuum tubes
US7607560B2 (en) 2004-05-14 2009-10-27 Intevac, Inc. Semiconductor die attachment for high vacuum tubes
JP2006043813A (en) * 2004-08-04 2006-02-16 Denso Corp MICROSYSTEM STRUCTURE WITH PROTECTIVE FILM AND METHOD FOR MANUFACTURING THE SAME
JP4898497B2 (en) * 2006-03-27 2012-03-14 キヤノン株式会社 Organic light emitting device and method for manufacturing the same
US20070262379A1 (en) * 2006-05-15 2007-11-15 Chin-Chuan Lai Metal structure of glass substrate and formation thereof
US10297557B2 (en) * 2017-06-30 2019-05-21 Sanken Electric Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
JP6846687B2 (en) * 2017-09-12 2021-03-24 パナソニックＩｐマネジメント株式会社 Semiconductor devices and their manufacturing methods

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4097889A (en) * 1976-11-01 1978-06-27 Rca Corporation Combination glass/low temperature deposited Siw Nx Hy O.sub.z
DE2967538D1 (en) * 1978-06-14 1985-12-05 Fujitsu Ltd Process for producing a semiconductor device having an insulating layer of silicon dioxide covered by a film of silicon oxynitride
US4438157A (en) * 1980-12-05 1984-03-20 Ncr Corporation Process for forming MNOS dual dielectric structure
JPS63184340A (en) * 1986-09-08 1988-07-29 Nec Corp Semiconductor device
JPH01187933A (en) * 1988-01-22 1989-07-27 Mitsubishi Electric Corp Manufacturing method of semiconductor device
JPH01228135A (en) 1988-03-09 1989-09-12 Nec Corp Semiconductor device
US4959705A (en) * 1988-10-17 1990-09-25 Ford Microelectronics, Inc. Three metal personalization of application specific monolithic microwave integrated circuit
JPH03268430A (en) 1990-03-19 1991-11-29 Kawasaki Steel Corp Passivation film structure of semiconductor device
JP2814009B2 (en) * 1990-06-05 1998-10-22 三菱電機株式会社 Method for manufacturing semiconductor device
JPH0645316A (en) 1992-07-23 1994-02-18 Nec Corp Semiconductor device and its manufacture
JPH0845926A (en) * 1994-07-26 1996-02-16 Sony Corp Semiconductor device and manufacturing method thereof
US5472913A (en) * 1994-08-05 1995-12-05 Texas Instruments Incorporated Method of fabricating porous dielectric material with a passivation layer for electronics applications
US5710067A (en) * 1995-06-07 1998-01-20 Advanced Micro Devices, Inc. Silicon oxime film
US5686329A (en) * 1995-12-29 1997-11-11 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming a metal oxide semiconductor field effect transistor (MOSFET) having improved hot carrier immunity
US5869396A (en) * 1996-07-15 1999-02-09 Chartered Semiconductor Manufacturing Ltd. Method for forming a polycide gate electrode
JP3268430B2 (en) 1997-02-26 2002-03-25 ホシデン株式会社 Jack

Also Published As

Publication number Publication date
EP0827199A2 (en) 1998-03-04
CA2213034A1 (en) 1998-03-02
EP0827199A3 (en) 2005-10-19
KR100370916B1 (en) 2003-03-15
NO320484B1 (en) 2005-12-12
KR19980024277A (en) 1998-07-06
NO974001D0 (en) 1997-09-01
CA2213034C (en) 2002-12-17
US6388310B1 (en) 2002-05-14

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