MX2018014328A - Metodo para preparar estructura texturizada de celda solar de silicio cristalino. - Google Patents
Metodo para preparar estructura texturizada de celda solar de silicio cristalino.Info
- Publication number
- MX2018014328A MX2018014328A MX2018014328A MX2018014328A MX2018014328A MX 2018014328 A MX2018014328 A MX 2018014328A MX 2018014328 A MX2018014328 A MX 2018014328A MX 2018014328 A MX2018014328 A MX 2018014328A MX 2018014328 A MX2018014328 A MX 2018014328A
- Authority
- MX
- Mexico
- Prior art keywords
- solar cell
- silicon solar
- preparing
- crystal silicon
- textured structure
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/122—Active materials comprising only Group IV materials
- H10F77/1228—Active materials comprising only Group IV materials porous silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
-
- H10P50/642—
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Photovoltaic Devices (AREA)
- Weting (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Sustainable Development (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
En la presente invención se describe un método para preparar una estructura texturizada de una celda solar de silicio cristalino, que comprende los siguientes pasos: (1) formación de una estructura de capa porosa sobre una superficie de una oblea; (2) posteriormente, lavado con una solución química alcalina; (3) utilización de un líquido de limpieza para eliminar las partículas metálicas residuales; (4) posteriormente, se realiza el grabado de superficie utilizando una primera solución de grabado químico, obteniendo así una estructura texturizada de una celda solar de silicio cristalino. La presente invención puede prolongar en gran medida la vida útil de una solución mixta de ácido fluorhídrico y ácido nítrico, y garantizar la estabilidad y uniformidad de la estructura texturizada. La figura 1 es el dibujo de resumen.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610480361.XA CN106549083B (zh) | 2016-06-27 | 2016-06-27 | 一种晶体硅太阳能电池绒面结构的制备方法 |
| PCT/CN2016/099338 WO2018000589A1 (zh) | 2016-06-27 | 2016-09-19 | 一种晶体硅太阳能电池绒面结构的制备方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| MX2018014328A true MX2018014328A (es) | 2019-03-14 |
| MX393517B MX393517B (es) | 2025-03-24 |
Family
ID=58365795
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MX2018014328A MX393517B (es) | 2016-06-27 | 2016-09-19 | Metodo para preparar estructura texturizada de celda solar de silicio cristalino. |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US10411145B2 (es) |
| EP (1) | EP3288089B1 (es) |
| JP (1) | JP6648070B2 (es) |
| KR (1) | KR101962469B1 (es) |
| CN (2) | CN106549083B (es) |
| AU (2) | AU2017204336A1 (es) |
| BR (1) | BR112018072175B1 (es) |
| MX (1) | MX393517B (es) |
| TW (1) | TWI625864B (es) |
| WO (1) | WO2018000589A1 (es) |
| ZA (1) | ZA201807439B (es) |
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| CN108130599A (zh) * | 2017-10-19 | 2018-06-08 | 维科诚（苏州）光伏科技有限公司 | 一种金刚线切割多晶硅片的预制绒方法 |
| CN109713078A (zh) * | 2017-10-26 | 2019-05-03 | 上海神舟新能源发展有限公司 | 一种对微纳米结构清洗并修复损伤方法 |
| CN108511321A (zh) * | 2018-03-19 | 2018-09-07 | 徐州鑫宇光伏科技有限公司 | 印刷后黑硅硅片的返工清洗方法及返工方法 |
| CN108411364A (zh) * | 2018-04-03 | 2018-08-17 | 锦州华昌光伏科技有限公司 | 一种低反射率单晶硅的制绒工艺 |
| CN108807568A (zh) * | 2018-06-14 | 2018-11-13 | 浙江晶科能源有限公司 | 一种湿法黑硅硅片的处理方法及湿法黑硅硅片的制备方法 |
| CN109065667B (zh) * | 2018-08-03 | 2020-02-14 | 通威太阳能（安徽）有限公司 | 一种无机碱刻蚀用于太阳能se双面perc电池的方法 |
| CN109545660A (zh) * | 2018-11-13 | 2019-03-29 | 国家电投集团西安太阳能电力有限公司 | 太阳能电池所使用硅片的清洗方法 |
| CN109675858A (zh) * | 2018-12-20 | 2019-04-26 | 天津中环领先材料技术有限公司 | 一种硅片减薄后的清洗工艺 |
| CN110158155A (zh) * | 2019-06-03 | 2019-08-23 | 西安奕斯伟硅片技术有限公司 | 一种硅块的处理方法和处理装置 |
| CN112838140B (zh) * | 2019-11-22 | 2022-05-31 | 阜宁阿特斯阳光电力科技有限公司 | 多晶硅太阳能电池及制备方法以及制备其绒面结构的方法 |
| US11398795B2 (en) | 2019-12-20 | 2022-07-26 | GAF Energy LLC | Roof integrated photovoltaic system |
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| CA3165505A1 (en) | 2020-01-22 | 2021-07-29 | Nathan Peterson | Integrated photovoltaic roofing shingles, methods, systems, and kits thereof |
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| WO2025122742A1 (en) | 2023-12-05 | 2025-06-12 | GAF Energy LLC | Roofing system for prevention of roofing shingle deformation |
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| CN105870263B (zh) * | 2016-06-27 | 2018-07-31 | 苏州阿特斯阳光电力科技有限公司 | 一种晶体硅太阳能电池绒面结构的制备方法 |
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2016
- 2016-06-27 CN CN201610480361.XA patent/CN106549083B/zh active Active
- 2016-06-27 CN CN201810777886.9A patent/CN108630786A/zh not_active Withdrawn
- 2016-09-19 BR BR112018072175-1A patent/BR112018072175B1/pt not_active IP Right Cessation
- 2016-09-19 EP EP16882797.0A patent/EP3288089B1/en active Active
- 2016-09-19 MX MX2018014328A patent/MX393517B/es unknown
- 2016-09-19 WO PCT/CN2016/099338 patent/WO2018000589A1/zh not_active Ceased
- 2016-11-24 TW TW105138611A patent/TWI625864B/zh active
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2017
- 2017-06-23 JP JP2017122784A patent/JP6648070B2/ja active Active
- 2017-06-27 AU AU2017204336A patent/AU2017204336A1/en not_active Abandoned
- 2017-06-27 US US15/634,302 patent/US10411145B2/en active Active
- 2017-06-27 KR KR1020170081045A patent/KR101962469B1/ko not_active Expired - Fee Related
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2018
- 2018-11-06 ZA ZA2018/07439A patent/ZA201807439B/en unknown
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2019
- 2019-03-01 AU AU2019201444A patent/AU2019201444B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| ZA201807439B (en) | 2019-08-28 |
| KR101962469B1 (ko) | 2019-03-26 |
| TWI625864B (zh) | 2018-06-01 |
| US10411145B2 (en) | 2019-09-10 |
| AU2017204336A1 (en) | 2018-01-18 |
| MX393517B (es) | 2025-03-24 |
| TW201801338A (zh) | 2018-01-01 |
| AU2019201444B2 (en) | 2020-07-16 |
| JP2018006744A (ja) | 2018-01-11 |
| KR20180001513A (ko) | 2018-01-04 |
| CN108630786A (zh) | 2018-10-09 |
| WO2018000589A1 (zh) | 2018-01-04 |
| EP3288089B1 (en) | 2020-03-11 |
| EP3288089A1 (en) | 2018-02-28 |
| JP6648070B2 (ja) | 2020-02-14 |
| CN106549083B (zh) | 2018-08-24 |
| CN106549083A (zh) | 2017-03-29 |
| BR112018072175A2 (pt) | 2019-02-12 |
| AU2019201444A1 (en) | 2019-03-21 |
| EP3288089A4 (en) | 2018-10-10 |
| US20170373202A1 (en) | 2017-12-28 |
| BR112018072175B1 (pt) | 2022-11-22 |
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