WO2026018702A1 - Semiconductor device, semiconductor device production method, and electronic apparatus - Google Patents

Abstract

This semiconductor device is provided with: a semiconductor component that has a semiconductor substrate, a protective substrate, and adhesive resin that is provided between the semiconductor substrate and the protective substrate and bonds the semiconductor substrate and the protective substrate; a mounting substrate on which the semiconductor component is mounted; and protective resin that contacts a side surface of the semiconductor component. A gap is formed at least between a portion of the adhesive resin and the protective resin.

Description

Semiconductor device, semiconductor device manufacturing method, and electronic device

This technology relates to semiconductor devices equipped with semiconductor components, semiconductor device manufacturing methods, and electronic devices.

Conventionally, when mounting a semiconductor package, which is made by bonding a silicon substrate and a glass substrate with an adhesive resin, on a mounting substrate, a technology has been proposed in which an underfill is filled between the semiconductor package and the mounting substrate (for example, Patent Document 1).

International Publication No. 2016/203967

When underfill is applied between the semiconductor package and the mounting board, it creeps up the sides of the semiconductor package due to capillary action. As a result, when the temperature drops after the underfill is thermally cured, stress is applied to the adhesive resin due to the difference in thermal expansion coefficient between the underfill and the adhesive resin of the semiconductor package, which can cause problems such as cohesive failure, cracks, and peeling.

This technology was developed in response to these issues and aims to improve the reliability of semiconductor devices.

The semiconductor device according to the present technology includes a semiconductor component having a semiconductor substrate, a protective substrate, and an adhesive resin provided between the semiconductor substrate and the protective substrate to connect the semiconductor substrate and the protective substrate, a mounting substrate on which the semiconductor component is mounted, and a protective resin in contact with a side surface of the semiconductor component, and a gap is formed between at least a portion of the adhesive resin and the protective resin.
This makes it possible to reduce the load on the adhesive resin in the manufacturing process of the semiconductor device.

1 is a schematic diagram of a structure of a semiconductor device. FIG. 1 is a cross-sectional view of a semiconductor device. 1 is a flowchart showing a method for manufacturing a semiconductor device. 10A to 10C are diagrams illustrating a process of applying an underfill material. 10A and 10B are cross-sectional views showing the semiconductor device during the thermal curing treatment and the void forming treatment. 10 is a flowchart showing a first modification of the method for manufacturing a semiconductor device. 10A and 10B are cross-sectional views showing the semiconductor device during the thermal curing treatment and the void forming treatment. 10 is a flowchart showing a second modification of the method for manufacturing a semiconductor device. 10A and 10B are cross-sectional views showing the semiconductor device during the thermal curing treatment and the void forming treatment. FIG. 10 is a block diagram showing an example of a circuit configuration when the semiconductor device is a solid-state imaging element. FIG. 1 is a diagram showing a configuration of an imaging device. This is a first modification of the semiconductor device. This is a second modification of the semiconductor device.

The embodiments will be described below in the following order.
1. Semiconductor device according to an embodiment
[1.1. Structure of the semiconductor device]
[1.2. Manufacturing method of imaging device]
2. First modified example of the manufacturing method of the imaging device
3. Modification 2 of the manufacturing method of the imaging device
<4. Imaging device>
[4.1. Configuration of solid-state imaging device]
[4.2. Configuration of imaging device]
5. Modified Examples
[5.1. Modification 1]
[5.2. Modification 2]
<6. Summary>
<7. This Technology>

1. Semiconductor device according to an embodiment
[1.1. Structure of the semiconductor device]
Fig. 1 is a schematic diagram of the structure of a semiconductor device 1. Fig. 1A is a cross-sectional view of the semiconductor device 1, and Fig. 1B is an enlarged partial view of a portion X in Fig. 1A.

As shown in Figures 1A and 1B, semiconductor device 1 includes a CSP (Chip Scale Package) 11, which is an example of a semiconductor component, and a mounting substrate 12. In semiconductor device 1, CSP 11 is mounted on mounting substrate 12 via solder balls 13. In addition, in semiconductor device 1, underfill 14 is filled between CSP 11 and mounting substrate 12.

CSP 11 is composed of a semiconductor substrate 21, adhesive resin 22, and protective substrate 23. The semiconductor substrate 21 is mainly made of silicon (Si), and has the electronic circuits of the semiconductor device 1 (pixels in the case of a solid-state image sensor) etc. formed on its front surface (the surface facing the protective substrate 23), and a rewiring layer and electrode pads formed on its back surface (the surface facing the mounting substrate 12), which are connected via TSVs (Through Silicon Vias).

Adhesive resin 22 is provided between semiconductor substrate 21 and protective substrate 23 to bond protective substrate 23 to semiconductor substrate 21. Adhesive resin 22 is made of a resin material such as acrylic resin, epoxy resin, or silicone resin that has a low glass transition temperature and a high thermal expansion coefficient in order to suppress warping when CSP 11 is in an aggregated state (for example, in the form of a wafer or panel) before being separated into individual pieces. Adhesive resin 22 is made of a resin material with a glass transition temperature of, for example, 100°C or less and a coefficient of thermal expansion (CTE: Coefficient of Thermal Expansion) of, for example, α1: 80 ppm/°C or more, α2: 100 ppm/°C or more.

The protective substrate 23 is a substrate that protects the semiconductor substrate 21 and is made of a light-transmitting material, such as glass.

Note that when the semiconductor device 1 is a solid-state imaging element, the CSP 11 may be provided with a microlens array, color filters, etc. in addition to the semiconductor substrate 21, adhesive resin 22, and protective substrate 23. The microlens array, color filters, etc. may be provided inside or between the semiconductor substrate 21, adhesive resin 22, and protective substrate 23.

CSP11 is mounted on mounting substrate 12 so that the back surface of semiconductor substrate 21 faces mounting substrate 12. When CSP11 is mounted on mounting substrate 12, electrode pads formed on CSP11 and electrodes formed on mounting substrate 12 are connected by solder balls 13.

In order to prevent cracks in the solder balls 13 due to shear stress caused by differences in the thermal expansion coefficients between the CSP 11 (semiconductor substrate 21) and the mounting substrate 12, underfill 14 is filled between the CSP 11 and the mounting substrate 12 so as to cover the solder balls 13.

The underfill 14 is formed continuously from between the CSP 11 and the mounting substrate 12 to the side of the CSP 11. The underfill 14 has a roughly triangular cross section on the side of the CSP 11, and is provided up to near the top surface of the protection substrate 23.

The underfill 14 is made of an underfill material, which is a thermosetting resin with a high glass transition temperature and a low thermal expansion coefficient to ensure high reliability. The underfill material has a glass transition temperature of, for example, 125°C or higher and a thermal expansion coefficient of, for example, about 25 to 35 ppm/°C.
In the following description, the underfill material before being thermally cured may also be referred to as underfill 14 .

As will be described in more detail below, when thermally curing the underfill 14, the semiconductor device 1 must be heated to a temperature of 100°C or higher. While the adhesive resin 22 is a resin material with a high coefficient of thermal expansion, the underfill 14 has a low coefficient of thermal expansion. Therefore, the adhesive resin 22 expands when heated and then attempts to shrink significantly when cooled after the underfill 14 has hardened. If the underfill 14 and adhesive resin 22 are stuck together at this time, problems such as cohesive failure, cracks, and peeling may occur when the adhesive resin 22 attempts to shrink.

In the semiconductor device 1, therefore, a gap 15 is formed between the adhesive resin 22 and the underfill 14. As a result, even if the adhesive resin 22 shrinks when the temperature drops, the underfill 14 and adhesive resin 22 are not in contact with each other across the gap 15, which makes it possible to reduce the occurrence of defects such as cohesive failure, cracks, and peeling.

The void 15 is formed so that the length D1 in the thickness direction is approximately the same as the length D2 in the thickness direction of the adhesive resin 22. However, the length D1 in the thickness direction of the void 15 may be shorter than the length D2 in the thickness direction of the adhesive resin 22. For example, when the length D2 in the thickness direction of the adhesive resin 22 is 50 μm, the length D1 in the thickness direction of the void 15 may be approximately 5 μm to 50 μm.
The thickness direction is the direction in which the CSP 11 and the mounting substrate 12 overlap, or the direction in which the semiconductor substrate 21, the adhesive resin 22, and the protection substrate 23 overlap.

This reduces the area of contact between the underfill 14 and adhesive resin 22, while also ensuring the area of contact between the underfill 14 and the side surfaces of the semiconductor substrate 21 and protective substrate 23. This makes it possible to prevent defects such as cohesive failure, cracks, and peeling of the adhesive resin 22. It also reduces stress concentration at the corners of the semiconductor substrate 21 where it comes into contact with the underfill 14, preventing peeling between the underfill 14 and the bottom surface of the semiconductor substrate 21 from developing into cracks in the solder balls 13.

Furthermore, by covering the underfill 14 up to the side surfaces of the protective substrate 23, the semiconductor device 1 is able to suppress flare caused by light entering from the side surfaces of the protective substrate 23.

The width T1 of the gap 15 should be, for example, about 1 μm to 50 μm, so long as the underfill 14 does not come into contact with the adhesive resin 22. In other words, the width T1 of the gap 15 should be equal to or less than the length D2 of the adhesive resin 22 in the thickness direction.
The width direction is a direction perpendicular to the side surface of the CSP 11 .

Figure 2 is a cross-sectional view of semiconductor device 1. Figure 2A is a cross-sectional view taken along line A-A in Figure 1A. Figure 2B is a cross-sectional view taken along line B-B in Figure 1A. Figure 2C is a cross-sectional view taken along line C-C in Figure 1A.

As shown in Figures 2A, 2B, and 2C, the underfill 14 is formed along the entire outer edge of the CSP 11. Furthermore, as shown in Figures 2A and 2C, the underfill 14 is formed so as to contact the entire outer edges of the semiconductor substrate 21 and the protective substrate 23.

2B, the underfill 14 is formed so as not to come into contact with the entire outer edge of the adhesive resin 22. In other words, the void 15 is formed over the entire outer edge of the CSP 11.
This makes it possible to reduce the occurrence of defects such as cohesive failure, cracks, and peeling of the adhesive resin 22.

The voids 15 may be formed only in the center of each side of the CSP 11. Because the thermal expansion of the adhesive resin 22 is large in the center of each side, forming the voids 15 in that portion can also reduce the occurrence of defects such as cohesive failure, cracks, and peeling.

[1.2. Imaging device manufacturing method]
3 is a flowchart showing a manufacturing method of the semiconductor device 1. In step S1, the CSP 11 is manufactured. Here, for example, a predetermined electronic circuit (such as an image sensor) is formed on a silicon wafer on which semiconductor substrates 21 are arranged in a two-dimensional matrix, and an adhesive resin 22 is applied to the formed electronic circuit. Thereafter, a protection substrate 23 is bonded on the adhesive resin 22, and TSVs, rewiring layers, and electrode pads are formed on the back surface of the semiconductor substrate 21 to electrically connect to the electronic circuit formed on the front surface. The CSP 11 is then divided into chips by dicing.
As a method for manufacturing the CSP 11, various known methods and various methods to be developed in the future can be appropriately adopted.

In step S2, the CSP 11 is mounted on the mounting substrate 12 via solder balls 13. The CSP 11 and mounting substrate 12 are solder-bonded using, for example, a nitrogen reflow device.

In step S3, an underfill material is applied between the CSP 11 and the mounting substrate 12.
4A and 4B are diagrams illustrating the process of applying an underfill material, with Fig. 4A being a diagram illustrating the state before the underfill material is applied, and Fig. 4B being a diagram illustrating the state after the underfill material has been applied.

As shown in Fig. 4A, the underfill material 24 is discharged from the nozzle 25 on the side surface of the CSP 11. The underfill material 24 is liquid, and when discharged from the nozzle 25, it penetrates between the CSP 11 and the mounting substrate 12 by capillary action, as shown by the arrows in Fig. 4B. The underfill material 24 also creeps up the side surface of the CSP 11 by capillary action.
Therefore, the underfill material 24 is applied between the CSP 11 and the mounting substrate 12 and on the side surfaces of the CSP 11 to form the underfill 14 .

In step S4, a thermal curing process is performed to thermally harden the underfill 14. In the thermal curing process, the semiconductor device 1 is heated to approximately 125°C in an oven, for example, to thermally harden the underfill material 24.

In step S5, the heated semiconductor device 1 is cooled to perform a gap formation process, which forms gaps 15 between the underfill 14 and the adhesive resin 22. Note that the heat curing process in step S4 and the gap formation process in step S5 are performed sequentially within the same process, so these may be treated as a single process, either the heat curing process or the gap formation process.

Figure 5 is a cross-sectional view showing the semiconductor device 1 during the thermal curing treatment and void formation treatment. Figure 5A is a cross-sectional view showing the semiconductor device 1 before the thermal curing treatment. Figure 5B is a cross-sectional view showing the semiconductor device 1 immediately after the thermal curing treatment. Figure 5C is a cross-sectional view showing the semiconductor device 1 after the void formation treatment.

As shown in Figure 5A, before the thermal curing process, i.e., before the underfill 14 hardens, the sides of the semiconductor substrate 21, adhesive resin 22, and protective substrate 23 of the CSP 11 are approximately flush with each other. Furthermore, the adhesive resin 22 and the underfill 14 are in contact.

Subsequently, when the semiconductor device 1 is heated during the thermal curing process, the adhesive resin 22 has a high thermal expansion coefficient and the underfill 14 is in a liquid phase before curing. As a result, as shown in Figure 5B, the adhesive resin 22 swells outward from the outer edges of the semiconductor substrate 21 and protective substrate 23, causing the adhesive resin 22 to dent the protective resin (underfill 14).

Subsequently, when the underfill 14 is thermally cured during the thermal curing process, the underfill 14 hardens while the expanded portion of the adhesive resin 22 remains concave. When the semiconductor device 1 is then cooled during the void formation process, the adhesive resin 22 thermally shrinks, returning to the size it had before the thermal curing process began or to its concave state. At this point, a void 15 is formed between the underfill 14 and the adhesive resin 22, as shown in Figure 5C.

It is possible to use a material for the underfill 14 such that the adhesion between the underfill 14 and the adhesive resin 22 is lower than the adhesion between the underfill 14 and the semiconductor substrate 21 and the adhesion between the underfill 14 and the protective substrate 23. This makes it possible to reduce the possibility that the underfill 14 and the adhesive resin 22 will adhere to each other when forming the void 15, preventing the void 15 from being formed.

2. First modified example of the manufacturing method of the imaging device
Fig. 6 is a flowchart showing a first modification of the method for manufacturing the semiconductor device 1. In Fig. 6, the same steps as those in the method for manufacturing the semiconductor device 1 shown in Fig. 3 are assigned the same step numbers, and detailed descriptions thereof will be omitted.

Figure 7 is a cross-sectional view showing the semiconductor device 1 during the thermal curing treatment and void formation treatment. Figure 7A is a cross-sectional view showing the semiconductor device 1 before the thermal curing treatment. Figure 7B is a cross-sectional view showing the semiconductor device 1 immediately after the thermal curing treatment. Figure 7C is a cross-sectional view showing the semiconductor device 1 after the temperature has been lowered.

In step S1, the CSP 11 is manufactured. In step S2, the CSP 11 is mounted on the mounting substrate 12 via solder balls 13.

In step S11, as shown in FIG. 7A, moisture 26 is impregnated into the side surfaces of the adhesive resin 22. In order to impregnate the side surfaces of the adhesive resin 22 with moisture 26, it is preferable that the adhesive resin 22 be made of a resin material with high moisture absorption, such as acrylic resin.

Then, in step S3, underfill material 24 is filled between the CSP 11 and the mounting substrate 12. In step S4, a thermal curing process is performed to thermally harden the underfill 14.

7B, when the semiconductor device 1 is heated, the moisture 26 contained in the adhesive resin 22 evaporates, generating bubbles between the underfill 14 and the adhesive resin 22. The generated bubbles form a gap 15 between the underfill 14 and the adhesive resin 22. At this time, as shown in FIG. 7B, both the underfill 14 and the adhesive resin 22 become concave relative to each other.
However, depending on the degree of hardening of the underfill 14 and the adhesive resin 22, only one of the underfill 14 and the adhesive resin 22 may be concave.
In this way, in the first modification, the voids 15 are formed in the thermal curing treatment, and therefore the thermal curing treatment includes a space forming treatment.

Thereafter, the heated semiconductor device 1 is cooled to maintain the gap 15 between the underfill 14 and the adhesive resin 22 .
As shown in FIG. 7C, when the semiconductor device 1 is cooled, the underfill 14 and adhesive resin 22 undergo thermal contraction, but the voids 15 remain.

3. Modification 2 of the manufacturing method of the imaging device
Fig. 8 is a flowchart showing a modified example 2 of the method for manufacturing the semiconductor device 1. In Fig. 8, the same steps as those in the method for manufacturing the semiconductor device 1 shown in Fig. 3 are assigned the same step numbers, and detailed descriptions thereof will be omitted.

Figure 9 is a cross-sectional view showing the semiconductor device 1 during the thermal curing treatment and void formation treatment. Figure 9A is a cross-sectional view showing the semiconductor device 1 before the underfill material 24 is applied. Figure 9B is a cross-sectional view showing the semiconductor device 1 after the underfill material 24 has been applied. Figure 9C is a cross-sectional view showing the semiconductor device 1 after the temperature has been lowered.

In step S1, the CSP 11 is manufactured. In step S2, the CSP 11 is mounted on the mounting substrate 12 via solder balls 13.

In step S21, as shown in Figure 9A, a hydrophobic material 27 having hydrophobic properties is applied to the side surface of the adhesive resin 22.

Thereafter, in step S3, underfill material 24 is filled between CSP 11 and mounting substrate 12. At this time, as shown in Fig. 9B, since hydrophobic material 27 is applied to the side surface of adhesive resin 22, underfill material 24 is repelled by hydrophobic material 27 and separated from hydrophobic material 27 to form gap 15.
In this way, in the second modification, the gap 15 is formed in the process of applying the underfill material 24, and therefore the process of applying the underfill material 24 includes a space forming process.

In step S4, a thermal curing process is performed to thermally cure the underfill material. Thereafter, the heated semiconductor device 1 is cooled to maintain the gap 15 between the underfill 14 and the adhesive resin 22.
As shown in FIG. 9C, when the semiconductor device 1 is cooled, the underfill 14 and adhesive resin 22 thermally shrink, but the voids 15 remain.

<4. Imaging device>
[4.1. Configuration of solid-state imaging device]
FIG. 10 is a block diagram showing an example of a circuit configuration when the semiconductor device 1 is a solid-state image sensor.
A CMOS (Complementary Metal Oxide Semiconductor) solid-state imaging element is an example of the semiconductor device 1. When the semiconductor device 1 is a solid-state imaging element, as shown in Fig. 10 , the semiconductor device 1 is configured to include a pixel array section 32 in which a plurality of pixels 31 are formed, a vertical drive circuit 33, a column signal processing circuit 34, a horizontal drive circuit 35, an output circuit 36, and a control circuit 37.

A pixel 31 is composed of a photoelectric conversion element and multiple pixel transistors. The pixel array section 32 is composed of multiple pixels 31 arranged in both the row and column directions. The pixel array section 32 is composed of an effective pixel area that actually receives light, amplifies the signal charge generated by photoelectric conversion, and reads it out to the column signal processing circuit 34, and a black reference pixel area (not shown) for outputting optical black, which serves as the reference for the black level. The black reference pixel area is usually formed on the periphery of the effective pixel area.

The control circuit 37 generates operating clocks and control signals for the vertical drive circuit 33, column signal processing circuit 34, and horizontal drive circuit 35 based on the vertical synchronization signal, horizontal synchronization signal, and master clock, and outputs these to the vertical drive circuit 33, column signal processing circuit 34, and horizontal drive circuit 35.

The vertical drive circuit 33 is configured, for example, by a shift register, and sequentially selects and scans each pixel 31 in the pixel array section 32 in the vertical direction, row by row. It then outputs pixel signals based on the signal charge obtained in each pixel 31 according to the amount of light received to the column signal processing circuit 34 via the vertical signal line 38.

The column signal processing circuit 34 is arranged, for example, for each column of pixels 31, and performs signal processing such as noise removal and signal amplification on the signals output from one row of pixels 31 for each pixel column based on signals from a black reference pixel area (not shown, but formed around the effective pixel area). A horizontal selection switch (not shown) is provided between the output stage of the column signal processing circuit 34 and the horizontal signal line 39.

The horizontal drive circuit 35 is configured, for example, by a shift register, and sequentially outputs horizontal scanning pulses to select each of the column signal processing circuits 34 in turn, causing each column signal processing circuit 34 to output a pixel signal to the horizontal signal line 39.

The output circuit 36 processes and outputs signals sequentially supplied from each column signal processing circuit 34 via the horizontal signal line 39.

[4.2. Configuration of imaging device]
11 is a diagram showing the configuration of an imaging device 40. As shown in Fig. 11, the imaging device 40, which uses the semiconductor device 1 as a solid-state imaging element, includes an optical system 41 that causes light to be incident on the semiconductor device 1 (solid-state imaging element), a signal processing unit 42 that performs predetermined signal processing using a signal that corresponds to the amount of received light and is output from the semiconductor device 1, and a control unit 43 that performs overall control of the imaging device 40.

The imaging device 40 also includes a storage unit 44 that stores image data obtained based on the light-receiving signal, and a communication unit 45 for transmitting the image data to the outside. The imaging device 40 may also be provided with a display unit that can be used to check the captured image, etc.

The optical system 41 includes various lenses, such as a cover lens, a zoom lens, and a focus lens, as well as an iris mechanism. Light (incident light) from the subject is guided by the optical system 41 and focused on the light-receiving surface of the semiconductor device 1.

The signal processing unit 42 performs various necessary processes on the RAW image data supplied from the semiconductor device 1, such as pre-processing, re-mosaic processing and demosaic processing (to be described later), YC generation processing, resolution conversion processing, and codec processing.
In the pre-processing, clamping processing for clamping the R, G, and B black levels to predetermined levels is performed on the captured image signal, and correction processing between the R, G, and B color channels is also performed.

The control unit 43 is configured with a microcomputer having, for example, a CPU (Central Processing Unit), ROM (Read Only Memory), and RAM (Random Access Memory). The CPU executes various processes in accordance with programs stored in the ROM or programs loaded into the RAM, thereby achieving overall control of the imaging device 40 by the control unit 43.

The control unit 43 issues instructions to the driver unit 46 to drive the zoom lens, focus lens, diaphragm mechanism, etc. that make up the optical system 41. The driver unit 46 supplies drive voltages to various components, such as actuators, based on instructions from the control unit 43, thereby moving the focus lens and zoom lens, opening and closing the diaphragm blades of the diaphragm mechanism, etc.

The control unit 43 controls writing and reading of various data to and from the storage unit 44. The control unit 43 also transmits and receives information to and from an external information processing device via the communication unit 45.

5. Modified Examples
The embodiment is not limited to the specific example described above, and various modified configurations can be adopted.

[5.1. Modification 1]
12 shows a first modified example of the semiconductor device. In the above embodiment, an example has been described in which the semiconductor device 1 includes the CSP 11. However, the semiconductor device 1 may be configured to form a gap 15 when mounting something other than the CSP 11 on the substrate. In the first modified example, an example will be described in which the semiconductor device is a sensor device 100.

As shown in FIG. 12, the sensor device 100 includes a sensor substrate 101, a transparent substrate 102, an adhesive resin 103, a die attach material 104, an organic substrate 105, and solder balls 106. The sensor substrate 101, the transparent substrate 102, and the adhesive resin 103 are formed as a semiconductor component 110.

A sensor circuit is formed on the sensor substrate 101. A transparent substrate 102 is adhered to the sensor substrate 101 via adhesive resin 103. Like adhesive resin 22, adhesive resin 103 is a resin with a low glass transition temperature and a high thermal expansion coefficient.

The sensor substrate 101 is fixed to the organic substrate 105 by a die attach material 104. The organic substrate 105 is a so-called printed circuit board.

In the sensor device 100, external connection terminals formed on the surface of the sensor substrate 101 are electrically connected to the surface of the organic substrate 105 using wire bonding.

In consideration of the weak mechanical strength of the conductive member 108, which is the bonding wire, and the moisture resistance of the adhesive resin 103, sealing resin 109 (protective resin) is filled between the side of the semiconductor component 110 and the organic substrate 105. Like the underfill 14, the sealing resin 109 is a resin with a high glass transition temperature and a low thermal expansion coefficient. The sealing resin 109 is formed using a technique such as potting to protect the conductive member 108, which is the bonding wire.

A gap 111 is then formed between the adhesive resin 103 and the sealing resin 109. The gap 111 can be formed in the same manner as the gap 15 in the semiconductor device 1.

[5.2. Modification 2]
13 shows a semiconductor device according to Modification 2. In Modification 2, an example in which the semiconductor device is a display device 200 will be described.

As shown in FIG. 13, the display device 200 comprises a display substrate 201, a transparent substrate 202, an adhesive resin 203, a die attach material 204, and a mounting substrate 205. The display substrate 201, the transparent substrate 202, and the adhesive resin 203 are formed as a semiconductor component 210. The mounting substrate 205 is, for example, a flexible substrate.

A display circuit is formed on the display substrate 201. A transparent substrate 202 is adhered to the display substrate 201 via adhesive resin 203. Like adhesive resin 22, adhesive resin 203 is a resin with a low glass transition temperature and a high thermal expansion coefficient.

The display substrate 201 is fixed to the mounting substrate 205 by the die attach material 204.

The display device 200 is electrically connected to the surface of the mounting substrate 205 using wire bonding from the external connection terminals 206 formed on the surface of the display substrate 201.

In consideration of the weak mechanical strength of the conductive member 207, which is the bonding wire, and the moisture resistance of the adhesive resin 203, sealing resin 208 (protective resin) is filled between the side of the semiconductor component 210 and the mounting substrate 205. Like the underfill 14, the sealing resin 208 is a resin with a high glass transition temperature and a low thermal expansion coefficient. The sealing resin 208 is formed using a method such as potting to protect the conductive member 207, which is the bonding wire.

A gap 209 is then formed between the adhesive resin 203 and the sealing resin 208. The gap 209 can be formed in the same manner as the gap 15 in the semiconductor device 1.

In this way, when mounting semiconductor components 110, 210 other than CSP11 on the organic substrate 105 and the mounting substrate 205, even if gaps 111, 209 are formed between the adhesive resin 103, 203 and the sealing resin 109, 208, it is possible to reduce the occurrence of defects such as cohesive failure, cracks, and peeling of the adhesive resin 103, 203.

<6. Summary>
As described above, the semiconductor device 1 (sensor device 100, display device 200) as an embodiment comprises a semiconductor component (CSP11) having a semiconductor substrate 21, a protective substrate 23, and adhesive resin 22 provided between the semiconductor substrate 21 and the protective substrate 23 and bonding the semiconductor substrate 21 and the protective substrate 23, a mounting substrate 12 on which the semiconductor component (CSP11) is mounted, and protective resin (underfill 14) in contact with the side surface of the semiconductor component (CSP11), and a gap 15 is formed between at least a portion of the adhesive resin 22 and the protective resin (underfill 14).
This reduces the stress applied to the adhesive resin 22 even if the adhesive resin 22 thermally shrinks when the temperature drops after the thermal curing treatment of the underfill 14. This makes it possible to prevent defects such as cohesive failure, cracks, and peeling of the adhesive resin 22.
Thus, the reliability of the semiconductor device 1 can be improved.

The semiconductor component (CSP11) is a chip-size package and is mounted on a mounting substrate 12 via solder balls 13, and a protective resin (underfill 14) is formed between the semiconductor component (CSP11) and the mounting substrate 12 and on the side surfaces of the semiconductor component (CSP11).
The underfill 14 is provided to prevent cracks in the solder balls 13 due to shear stress caused by the difference in thermal expansion coefficient between the CSP 11 and the mounting substrate 12. It also reduces stress concentration at the corners of the semiconductor substrate 21 where the underfill 14 comes into contact, and can prevent peeling from occurring between the underfill 14 and the bottom surface of the semiconductor substrate 21, which could lead to cracks in the solder balls 13.

The protective resin (underfill 14 ) is made of a resin having a lower coefficient of thermal expansion than the adhesive resin 22 .
This reduces the fluctuation in the physical properties of the underfill 14 due to temperature changes, making it possible to obtain higher reliability.

The protective resin (underfill 14) is made of a material that has lower adhesion to the adhesive resin 22 than the semiconductor substrate 21 and the protective substrate 23.
This allows the underfill 14 and the adhesive resin 22 to be easily separated when the adhesive resin 22 thermally shrinks during a temperature drop, making it possible to easily form the gap 15 .

The cavity 15 is formed over the entire outer edge of the semiconductor component (CSP 11).
This reduces stress when the adhesive resin 22 thermally shrinks over the entire outer edge of the CSP 11 .

The air gap 15 is formed in the center of each side of the semiconductor component (CSP 11).
This reduces the stress at the center of each side of the CSP 11, where the stress is highest when the adhesive resin 22 thermally shrinks.

The length of the gap 15 in the thickness direction is equal to or less than the thickness of the adhesive resin 22 .
Even under such conditions, the stress caused by the thermal contraction of the adhesive resin 22 can be reduced.

The length of the gap 15 in the direction perpendicular to the side surface of the semiconductor component is equal to or less than half the thickness of the adhesive resin.
Even under such conditions, the stress caused by the thermal contraction of the adhesive resin 22 can be reduced.

A method for manufacturing a semiconductor device includes mounting a semiconductor component (CSP11) having a semiconductor substrate 21, a protective substrate 23, and adhesive resin 22 provided between the semiconductor substrate 21 and the protective substrate 23 to connect the semiconductor substrate 21 and the protective substrate 23 on a mounting substrate 12, filling the side surfaces of the semiconductor component (CSP11) with protective resin (underfill 14), and forming a gap 15 between at least a portion of the adhesive resin 22 and the protective resin (underfill 14).
This manufacturing method also improves the reliability of the semiconductor device 1 .

The protective resin (underfill 14) is made of a material that has lower adhesion to the adhesive resin 22 than the semiconductor substrate 21 and the protective substrate 23, and during the heat curing process to heat harden the protective resin (underfill 14), the adhesive resin 22 expands so that the protective resin (underfill 14) is recessed, and when cooled after the heat curing process, the adhesive resin 22 contracts to form a gap 15.
By manufacturing the semiconductor device 1 in this manner, the gap 15 can be easily formed.

A protective resin (underfill 14) is filled onto the side of the semiconductor component (CSP 11) with moisture 26 contained on the side of the adhesive resin 22, and the moisture 26 is evaporated during a thermal curing process for thermally curing the protective resin (underfill 14), forming a gap 15.
In this manufacturing method as well, the voids 15 can be easily formed.

With the hydrophobic member 27 formed on the side surface of the adhesive resin 22, the side surface of the semiconductor component (CSP 11) is filled with a protective resin (underfill 14), thereby forming a gap 15.
In this manufacturing method as well, the voids 15 can be easily formed.

The electronic device (imaging device 40) comprises a solid-state imaging element (semiconductor device 1) and an optical system 41 that directs incident light to the solid-state imaging element, and the solid-state imaging element (semiconductor device 1) comprises a semiconductor component (CSP11) having a semiconductor substrate 21, a protective substrate 23, and an adhesive resin 22 provided between the semiconductor substrate 21 and the protective substrate 23 and adhering the semiconductor substrate 21 and the protective substrate 23, a mounting substrate 12 on which the semiconductor component (CSP11) is mounted, and a protective resin (underfill 14) that contacts the side of the semiconductor component (CSP11), and a gap 15 is formed between at least a portion of the adhesive resin 22 and the protective resin (underfill 14).
This electronic device also improves the reliability of the semiconductor device 1 .

The effects described in this specification are merely examples and are not limiting, and other effects may also be present.

<7. This Technology>
The present technology can also be configured as follows.
(1)
a semiconductor component including a semiconductor substrate, a protective substrate, and an adhesive resin provided between the semiconductor substrate and the protective substrate to bond the semiconductor substrate and the protective substrate;
a mounting substrate on which the semiconductor component is mounted;
a protective resin in contact with a side surface of the semiconductor component,
a gap is formed between at least a portion of the adhesive resin and the protective resin.
(2)
the semiconductor component is a chip-size package and is mounted on the mounting substrate via solder balls;
The semiconductor device according to (1), wherein the protective resin is formed between the semiconductor component and the mounting substrate and on a side surface of the semiconductor component.
(3)
The semiconductor device according to (1) or (2), wherein the protective resin is made of a resin having a thermal expansion coefficient lower than that of the adhesive resin.
(4)
The semiconductor device according to (3), wherein the protective resin is made of a material that has lower adhesion to the adhesive resin than the semiconductor substrate and the protective substrate.
(5)
The semiconductor device according to any one of (1) to (4), wherein the void is formed over the entire outer edge of the semiconductor component.
(6)
The semiconductor device according to any one of (1) to (4), wherein the void is formed in a central portion of each side of the semiconductor component.
(7)
The semiconductor device according to any one of (1) to (6), wherein the length of the gap in the thickness direction is equal to or less than the thickness of the adhesive resin.
(8)
The semiconductor device according to any one of (1) to (7), wherein the length of the gap in a direction perpendicular to the side surface of the semiconductor component is equal to or less than half the thickness of the adhesive resin.
(9)
a semiconductor component having a semiconductor substrate, a protective substrate, and an adhesive resin provided between the semiconductor substrate and the protective substrate to connect the semiconductor substrate and the protective substrate is mounted on a mounting substrate;
A protective resin is filled on the side surface of the semiconductor component,
A method for manufacturing a semiconductor device, wherein a gap is formed between at least a part of the adhesive resin and the protective resin.
(10)
the protective resin is made of a material that has lower adhesion to the adhesive resin than the semiconductor substrate and the protective substrate;
In a heat curing process for thermally curing the protective resin, the adhesive resin is expanded so that the protective resin is depressed;
The method for manufacturing a semiconductor device according to (9), wherein the adhesive resin is shrunk during cooling after the heat curing treatment to form the void.
(11)
The protective resin is filled onto the side surface of the semiconductor component in a state where the side surface of the adhesive resin contains moisture,
The method for manufacturing a semiconductor device according to (9), wherein the moisture is evaporated to form the voids in a thermal curing process for thermally curing the protective resin.
(12)
The method for manufacturing a semiconductor device according to (9), wherein the gap is formed by filling the side surface of the semiconductor component with the protective resin in a state where a hydrophobic member is formed on the side surface of the adhesive resin.
(13)
a solid-state imaging element;
an optical system that causes incident light to be incident on the solid-state imaging device,
The solid-state imaging device is
a semiconductor component including a semiconductor substrate, a protective substrate, and an adhesive resin provided between the semiconductor substrate and the protective substrate to bond the semiconductor substrate and the protective substrate;
a mounting substrate on which the semiconductor component is mounted;
a protective resin in contact with a side surface of the semiconductor component,
An electronic device in which a gap is formed between at least a part of the adhesive resin and the protective resin.

1 Semiconductor device 11 CSP
12 Mounting substrate 13 Solder ball 14 Underfill 15 Gap 21 Semiconductor substrate 22 Adhesive resin 23 Protective substrate

Claims (13)

a semiconductor component including a semiconductor substrate, a protective substrate, and an adhesive resin provided between the semiconductor substrate and the protective substrate to bond the semiconductor substrate and the protective substrate;
a mounting substrate on which the semiconductor component is mounted;
a protective resin in contact with a side surface of the semiconductor component,
a gap is formed between at least a portion of the adhesive resin and the protective resin. the semiconductor component is a chip-size package and is mounted on the mounting substrate via solder balls;
The semiconductor device according to claim 1 , wherein the protective resin is formed between the semiconductor component and the mounting substrate and on the side surfaces of the semiconductor component. The semiconductor device according to claim 1 , wherein the protective resin is made of a resin having a thermal expansion coefficient lower than that of the adhesive resin. The semiconductor device according to claim 3 , wherein the protective resin is made of a material that has lower adhesiveness to the adhesive resin than the semiconductor substrate and the protective substrate. The semiconductor device according to claim 1 , wherein the void is formed over the entire outer edge of the semiconductor component. The semiconductor device according to claim 1 , wherein the voids are formed in the center of each side of the semiconductor component. The semiconductor device according to claim 1 , wherein the length of the gap in the thickness direction is equal to or less than the thickness of the adhesive resin. The semiconductor device according to claim 1 , wherein the length of the gap in a direction perpendicular to the side surface of the semiconductor component is equal to or less than half the thickness of the adhesive resin. a semiconductor component having a semiconductor substrate, a protective substrate, and an adhesive resin provided between the semiconductor substrate and the protective substrate to connect the semiconductor substrate and the protective substrate is mounted on a mounting substrate;
A protective resin is filled on the side surface of the semiconductor component,
A method for manufacturing a semiconductor device, wherein a gap is formed between at least a part of the adhesive resin and the protective resin. the protective resin is made of a material that has lower adhesion to the adhesive resin than the semiconductor substrate and the protective substrate;
In a heat curing process for thermally curing the protective resin, the adhesive resin is expanded so that the protective resin is depressed;
10. The method for manufacturing a semiconductor device according to claim 9, wherein the adhesive resin is caused to shrink during cooling after the heat curing treatment, thereby forming the void. The protective resin is filled onto the side surface of the semiconductor component in a state where the side surface of the adhesive resin contains moisture,
The method for manufacturing a semiconductor device according to claim 9, wherein the voids are formed by evaporating the moisture in a thermal curing process for thermally curing the protective resin. The method for manufacturing a semiconductor device according to claim 9, wherein the gap is formed by filling the side surface of the semiconductor component with the protective resin in a state where a hydrophobic member is formed on the side surface of the adhesive resin. a solid-state imaging element;
an optical system that causes incident light to be incident on the solid-state imaging device,
The solid-state imaging device is
a semiconductor component including a semiconductor substrate, a protective substrate, and an adhesive resin provided between the semiconductor substrate and the protective substrate to bond the semiconductor substrate and the protective substrate;
a mounting substrate on which the semiconductor component is mounted;
a protective resin in contact with a side surface of the semiconductor component,
An electronic device in which a gap is formed between at least a part of the adhesive resin and the protective resin.