WO2025239202A1 - Bonding device and bonding method - Google Patents
Bonding device and bonding methodInfo
- Publication number
- WO2025239202A1 WO2025239202A1 PCT/JP2025/016300 JP2025016300W WO2025239202A1 WO 2025239202 A1 WO2025239202 A1 WO 2025239202A1 JP 2025016300 W JP2025016300 W JP 2025016300W WO 2025239202 A1 WO2025239202 A1 WO 2025239202A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- carrier
- die
- unit
- holes
- bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
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- H10W72/071—
Definitions
- This disclosure relates to a joining device and a joining method.
- the chip mounting system described in Patent Document 1 comprises a chip supply device, a bonding device, a surface treatment device, a carry-in/out section, and a transport section (paragraph [0225] of Patent Document 1).
- the chip supply device supplies multiple chips individually.
- the chips are adhered to tape covering the opening of the frame, and are pushed upward one by one and turned upside down one by one (paragraph [0251] of Patent Document 1).
- the bonding device attaches the chips supplied from the chip supply device onto a substrate.
- One embodiment of the present disclosure provides technology that increases the number of dies that can be mounted on a carrier while suppressing carrier contamination.
- a bonding apparatus separates multiple dies from a carrier and bonds them to a target substrate.
- the carrier has a carrier substrate, multiple first through holes penetrating the carrier substrate in the thickness direction, and a resin film provided on the carrier substrate, with the multiple dies mounted on the resin film.
- the bonding apparatus includes a carrier holding unit that holds the carrier, a pressing unit that presses the dies by supplying gas to the first through holes or by inserting pins into the first through holes, and a first moving unit that relatively moves the pressing unit and the carrier holding unit to change the die being pressed by the pressing unit.
- the carrier holding unit has a first surface against which the carrier abuts, a second surface facing opposite the first surface, and multiple second through holes penetrating between the first surface and the second surface.
- the pressing unit has a gas supply mechanism that supplies gas to the first through holes via the second through holes, or a pin driving mechanism that inserts pins into the first through holes via the second through holes.
- FIG. 1 is a plan view illustrating a joint system according to one embodiment.
- FIG. 2A is a cross-sectional view showing an example of a target substrate before a die is bonded thereto
- FIG. 2B is a cross-sectional view showing an example of a target substrate after a die is bonded thereto.
- FIG. 3 is a cross-sectional view of an example carrier before the dies are separated.
- FIG. 4 is a flowchart illustrating a bonding method according to one embodiment.
- FIG. 5 is a cross-sectional view showing an example of the operation of the joining device according to the embodiment.
- FIG. 6 is a cross-sectional view showing an example of the operation of the joining apparatus subsequent to FIG. FIG.
- FIG. 7A is a cross-sectional view showing a pressing unit according to one embodiment
- FIG. 7B is a plan view showing an example of a die that can be pressed by the pressing unit shown in FIG. 7A
- FIG. 8 is a cross-sectional view showing a pressing portion according to a modified example
- FIG. 9A is a cross-sectional view showing a pressing portion according to a reference embodiment
- FIG. 9B is a plan view showing an example of a die that can be pressed by the pressing portion shown in FIG. 9A.
- the X-axis, Y-axis, and Z-axis directions are perpendicular to one another.
- the X-axis and Y-axis directions are horizontal directions, and the Z-axis direction is vertical.
- the X-axis direction includes the positive X-axis direction and the negative X-axis direction, which is the direction opposite to the positive X-axis direction.
- the Y-axis direction includes the positive Y-axis direction and the negative Y-axis direction, which is the direction opposite to the positive Y-axis direction.
- the Z-axis direction includes the positive Z-axis direction and the negative Z-axis direction, which is the direction opposite to the positive Z-axis direction.
- the bonding system 1 separates multiple dies from a carrier and bonds them to a target substrate W.
- the target substrate W has a semiconductor substrate W1, such as a silicon wafer, and multiple devices W2 formed on the semiconductor substrate W1.
- the multiple devices W2 are partitioned by multiple streets that intersect each other at right angles.
- Each device W2 includes an electronic circuit.
- a die D is electrically connected to each device W2.
- the target substrate W is then cut along the streets to separate each device W2, thereby obtaining a semiconductor device.
- the semiconductor device includes the device W2 and the die D.
- Die D is formed by dividing a semiconductor substrate on which multiple devices other than device W2 are formed into individual devices.
- the electronic circuitry of die D is electrically connected to the electronic circuitry of device W2 on the target substrate W. Note that the type and number of die D electrically connected to one device W2 are not particularly limited. Although not shown, multiple die D may be electrically connected to one device W2.
- carrier E holds multiple dies D.
- Carrier E holds each die D with its bonding surface Da facing upward. This allows the bonding surface Da of each die D to be activated and hydrophilized.
- Carrier E has a carrier substrate E1 and a resin film E2 provided on the surface of carrier substrate E1 facing the die D.
- Carrier E holds multiple dies D on resin film E2.
- Carrier E adsorbs dies D, for example, electrostatically. By pressing dies D against resin film E2, it is possible to deform resin film E2 so as to remove gas from between dies D and resin film E2, and it is also possible to vacuum-adsorb dies D to resin film E2.
- Carrier E can also adsorb dies D using intermolecular forces.
- the carrier substrate E1 may be conductive or insulating.
- First through holes E3 are formed in the carrier substrate E1, penetrating the carrier substrate E1 in the thickness direction.
- the die D can be peeled off from the carrier E by supplying gas to the first through holes E3 or by inserting a pin (not shown) into the first through holes E3.
- the number and arrangement of the first through holes E3 are not particularly limited.
- One or more first through holes E3 may be formed for each die D.
- the resin film E2 is preferably made of a flexible material, specifically a material with an elastic modulus of 2 GPa or less, more preferably 0.5 GPa or less. From the perspective of durability when modifying the bonding surface Da of the die D, the resin film E2 is preferably made of, for example, polyimide or EVA (ethylene-vinyl acetate copolymer). The thickness of the resin film E2 is, for example, 10 ⁇ m. In this embodiment, the resin film E2 is a single layer, but it may be made of multiple layers. For example, the resin film E2 may have a polyolefin layer and an acrylic adhesive layer.
- the bonding system 1 comprises a loading/unloading station 2, a first processing station 3, a second processing station 5, and a control circuit 9.
- the loading/unloading station 2, the first processing station 3, and the second processing station 5 are arranged in a line, in this order, from the negative side of the X-axis to the positive side of the X-axis.
- multiple second processing stations 5 may be provided, and multiple second processing stations 5 may be arranged in a line from the negative side of the X-axis to the positive side of the X-axis.
- the loading/unloading station 2 includes a mounting table 20. Cassettes C1 to C4 are placed on the mounting table 20. Cassette C1 contains a target substrate W before a die D is bonded to it. Cassette C2 contains a target substrate W after a die D has been bonded to it. Cassette C3 contains a carrier E before the die D has been separated from it. Cassette C4 contains a carrier E after the die D has been separated from it.
- the loading/unloading station 2 comprises a first transfer area 21 and a first transfer device 22.
- the first transfer area 21 is adjacent to the mounting table 20.
- the first transfer area 21 extends in the Y-axis direction.
- the first transfer device 22 has a transfer arm.
- the transfer arm holds and transfers the target substrate W and carrier E in the first transfer area 21.
- the number of transfer arms may be one or more.
- the transfer arm for the target substrate W and the transfer arm for the carrier E may be provided separately.
- the first transfer device 22 has a drive unit (not shown) that moves or rotates the transfer arm.
- the transfer arm can move horizontally (in both the X-axis and Y-axis directions) and vertically (in the Z-axis direction), and can rotate around the vertical axis.
- the first processing station 3 includes a first storage device 30.
- the first storage device 30 is adjacent to the first transfer area 21.
- the first storage device 30 is positioned on the opposite side of the first transfer area 21 from the mounting table 20.
- the first storage device 30 temporarily stores target substrates W and carriers E.
- the first storage device 30 has multiple stages arranged vertically. Each stage holds a target substrate W and a carrier E. The stage for the target substrates W and the stage for the carriers E may be provided separately.
- the first processing station 3 comprises a second transfer area 31 and a second transfer device 32.
- the second transfer area 31 is adjacent to the first storage device 30 and extends from the first storage device 30 in the positive direction of the X-axis.
- the second transfer device 32 has a transfer arm.
- the transfer arm holds and transfers the target substrate W and carrier E in the second transfer area 31.
- the number of transfer arms may be one or more.
- the transfer arm for the target substrate W and the transfer arm for the carrier E may be provided separately.
- the second transfer device 32 has a drive unit (not shown) that moves or rotates the transfer arm.
- the transfer arm can move horizontally (in both the X-axis and Y-axis directions) and vertically (in the Z-axis direction), and can rotate around the vertical axis.
- the first processing station 3 includes a first activation device 33, a first hydrophilization device 34, a second activation device 35, and a second hydrophilization device 36.
- the first activation device 33, the first hydrophilization device 34, the second activation device 35, and the second hydrophilization device 36 are adjacent to the second transport region 31 and are provided on the positive Y-axis side or the negative Y-axis side of the second transport region 31.
- the first activation device 33 activates the bonding surface Da of the die D while the die D is attached to the carrier E.
- the first activation device 33 is, for example, a plasma processing device.
- oxygen gas which is the processing gas
- the bonding surface Da is activated by irradiating it with oxygen ions.
- the processing gas is not limited to oxygen gas, and may be, for example, nitrogen gas.
- the first hydrophilization device 34 hydrophilizes the bonding surface Da of the die D while the die D is attached to the carrier E.
- the first hydrophilization device 34 supplies pure water (e.g., deionized water) to the bonding surface Da while rotating the carrier E held by the spin chuck.
- the pure water imparts OH groups to the pre-activated bonding surface Da.
- the die D and target substrate W can be bonded using hydrogen bonds between the OH groups.
- the second activation device 35 activates the bonding surface Wa of the target substrate W.
- the second activation device 35 is, for example, a plasma processing device.
- oxygen gas which is the processing gas
- the bonding surface Wa is activated by irradiating the oxygen ions onto the bonding surface Wa.
- the processing gas is not limited to oxygen gas, and may be, for example, nitrogen gas.
- the second hydrophilization device 36 hydrophilizes the bonding surface Wa of the target substrate W.
- the second hydrophilization device 36 supplies pure water (e.g., deionized water) to the bonding surface Wa while rotating the target substrate W held by the spin chuck.
- the pure water imparts OH groups to the pre-activated bonding surface Wa.
- the die D and the target substrate W can be bonded using hydrogen bonds between the OH groups.
- the second processing station 5 includes a second storage device 50.
- the second storage device 50 is adjacent to the second transport area 31.
- the second storage device 50 is positioned on the opposite side of the second transport area 31 from the first storage device 30.
- the second storage device 50 temporarily stores target substrates W and carriers E.
- the second storage device 50 has multiple stages arranged vertically. Each stage holds at least one of the target substrates W and carriers E. The stage for the target substrates W and the stage for the carriers E may be provided separately.
- the second processing station 5 comprises a third transfer region 51 and a third transfer device 52.
- the third transfer region 51 is adjacent to the second storage device 50 and extends from the second storage device 50 in the positive direction of the X-axis.
- the third transfer device 52 has a transfer arm.
- the transfer arm holds and transfers the target substrate W and carrier E in the third transfer region 51.
- the number of transfer arms may be one or more.
- the transfer arm for the target substrate W and the transfer arm for the carrier E may be provided separately.
- the third transfer device 52 has a drive unit (not shown) that moves or rotates the transfer arm.
- the transfer arm can move horizontally (in both the X-axis and Y-axis directions) and vertically (in the Z-axis direction), and can rotate around the vertical axis.
- the second processing station 5 is equipped with a bonding device 60.
- the bonding device 60 is adjacent to the third transfer region 51 and is provided on the positive Y-axis side or the negative Y-axis side of the third transfer region 51.
- the bonding device 60 separates the die D from the carrier E and bonds the die D to the target substrate W by orienting the bonding surface Da of the separated die D toward the bonding surface Wa of the target substrate W. Details of the bonding device 60 will be described later.
- the control circuit 9 is, for example, a computer.
- the control circuit 9 includes an arithmetic unit 91 such as a CPU (Central Processing Unit), and a storage unit 92 such as a memory.
- the storage unit 92 stores programs that control the various processes executed in the bonding system 1.
- the control circuit 9 controls the operation of the bonding system 1 by having the arithmetic unit 91 execute the programs stored in the storage unit 92.
- a lower-level control circuit that controls the operation of each device that makes up the bonding system 1 may be provided, and a higher-level control circuit that controls multiple lower-level control circuits may be provided.
- the control circuit 9 may be made up of multiple lower-level control circuits and a higher-level control circuit.
- the control circuit 9 includes electronic circuits such as a CPU, GPU (Graphics Processing Unit), FPGA (Field Programmable Gate Array), or ASIC (Application Specific Integrated Circuit), and performs the various control operations described in this specification by executing instruction codes stored in memory or by being a circuit designed for a specific application.
- the first transport device 22 removes carrier E from cassette C3 and transports it to the first storage device 30.
- the second transport device 32 removes carrier E from the first storage device 30 and transports it to the first activation device 33.
- the first activation device 33 activates the bonding surface Da of the die D with the carrier E attached to it (step S101).
- the second transport device 32 removes the carrier E from the first activation device 33 and transports it to the first hydrophilization device 34.
- the first hydrophilization device 34 hydrophilizes the bonding surface Da of the die D with the die D attached to the carrier E (step S102).
- the second transport device 32 then removes the carrier E from the first hydrophilization device 34 and transports it to the second storage device 50.
- the third transport device 52 then removes the carrier E from the second storage device 50 and transports it to the bonding device 60.
- steps S101 and S102 above steps S103 and S104 below are performed.
- the first transfer device 22 removes the target substrate W from the cassette C1 and transfers it to the first storage device 30.
- the second transfer device 32 removes the target substrate W from the first storage device 30 and transfers it to the second activation device 35.
- the second activation device 35 activates the bonding surface Wa of the target substrate W (step S103).
- the second transport device 32 removes the target substrate W from the second activation device 35 and transports it to the second hydrophilization device 36.
- the second hydrophilization device 36 hydrophilizes the bonding surface Wa of the target substrate W (step S104).
- the second transfer device 32 removes the target substrate W from the second hydrophilization device 36 and transfers it to the second storage device 50.
- the third transfer device 52 removes the target substrate W from the second storage device 50 and transfers it to the bonding device 60.
- the bonding device 60 separates the die D from the carrier E and bonds the die D to the target substrate W by orienting the bonding surface Da of the separated die D toward the bonding surface Wa of the target substrate W (step S105). Note that if multiple dies D are electrically connected to one device W2, the bonding of the die D to the target substrate W is performed for each type of die D.
- the target substrate W is transported to cassette C2.
- the third transport device 52 removes the target substrate W from the bonding device 60 and transports it to the second storage device 50.
- the second transport device 32 removes the target substrate W from the second storage device 50 and transports it to the first storage device 30.
- the first transport device 22 removes the target substrate W from the first storage device 30 and stores it in cassette C2.
- the carrier E is stored in cassette C4.
- the third conveying device 52 removes the carrier E from the joining device 60 and transports it to the second storage device 50.
- the second conveying device 32 removes the carrier E from the second storage device 50 and transports it to the first storage device 30.
- the first conveying device 22 removes the carrier E from the first storage device 30 and stores it in cassette C4.
- the bonding apparatus 60 separates multiple dies D from a carrier E and bonds them to a target substrate W. For example, the bonding apparatus 60 sequentially separates multiple dies D one by one from the carrier E and bonds them to the target substrate W.
- the bonding device 60 includes, for example, a carrier holding unit 61, a substrate holding unit 62, and a transport unit 63.
- the carrier holding unit 61 holds the carrier E. In this embodiment, the carrier holding unit 61 holds the carrier E from below with the joining surface Da of the die D facing upward, but it may also hold the carrier E from above with the joining surface Da of the die D facing downward.
- the substrate holding unit 62 holds the target substrate W. In this embodiment, the substrate holding unit 62 holds the target substrate W from below with the joining surface Wa of the target substrate W facing upward, but it may also hold the target substrate W from above with the joining surface Wa of the target substrate W facing downward.
- the transport unit 63 transports the die D from the carrier E held by the carrier holding unit 61 to the target substrate W held by the substrate holding unit 62.
- the transport unit 63 includes, for example, a pickup unit 64 and a mount unit 65.
- the pickup unit 64 separates the die D from the carrier E held by the carrier holding unit 61 and transports it.
- the pickup unit 64 may turn the die D upside down while transporting it.
- the bonding surface Da of the die D can face downward.
- the mount unit 65 receives the die D from the pickup unit 64 and bonds the received die D to the target substrate W held by the substrate holding unit 62.
- the pickup unit 64 has, for example, a first suction head 64a and a first moving mechanism 64b.
- the first suction head 64a picks up the die D.
- the first suction head 64a picks up the joining surface Da of the die D, and may therefore pick up the die D without contact to avoid contaminating the joining surface Da.
- the first moving mechanism 64b moves the first suction head 64a in the X-axis, Y-axis, and Z-axis directions.
- the first moving mechanism 64b may also turn the first suction head 64a upside down, thereby turning the die D upside down.
- the joining surface Da of the die D can be turned upside down.
- the mount unit 65 has, for example, a second suction head 65a and a second movement mechanism 65b.
- the second suction head 65a suctions the die D from the side opposite the first suction head 64a.
- the second suction head 65a suctions the surface Db of the die D opposite the joining surface Da. Since it is not a problem if the surface Db opposite the joining surface Da becomes dirty, the second suction head 65a may come into contact with the die D. This improves suction force and prevents misalignment.
- the second movement mechanism 65b moves the second suction head 65a in the Z-axis direction to bond the die D to the target substrate W.
- the second movement mechanism 65b may move the second suction head 65a in the X-axis and Y-axis directions, or may rotate the second suction head 65a around the vertical axis.
- the amount of movement or rotation required to improve the accuracy of the bonding position is small, so when viewed from above, the second suction head 65a does not need to move much.
- the bonding device 60 is equipped with a pressing unit 66.
- the pressing unit 66 presses the resin film E2, for example, by supplying gas to the first through-hole E3 of the carrier substrate E1 or by inserting a pin (not shown) into the first through-hole E3.
- the pressing direction is a direction in which the resin film E2 moves away from the carrier substrate E1.
- the resin film E2 can be deformed only in the vicinity of one of the multiple dies D, forming a wedge-shaped gap between the resin film E2 and the die D and allowing the die D to be smoothly separated from the resin film E2.
- the joining device 60 includes a first moving unit 68.
- the first moving unit 68 moves the pressing unit 66 and the carrier holding unit 61 relative to one another to change the die D pressed by the pressing unit 66.
- the first moving unit 68 for example, moves the carrier holding unit 61 in the X-axis and Y-axis directions, and moves the pressing unit 66 in the Z-axis direction.
- the first moving unit 68 may move only one of the carrier holding unit 61 and the pressing unit 66.
- the first moving unit 68 moves only the carrier holding unit 61 in the X-axis and Y-axis directions out of the carrier holding unit 61 and the pressing unit 66. If the pressing unit 66 does not move in the X-axis and Y-axis directions, the pickup unit 64 can receive the die D at the same receiving position every time. This simplifies the operation of the pickup unit 64.
- the bonding device 60 may also include a second moving unit 69.
- the second moving unit 69 moves the substrate holding unit 62.
- the second moving unit 69 moves the substrate holding unit 62 in the X-axis direction and the Y-axis direction to change the bonding position of the die D relative to the target substrate W.
- the pickup unit 64 can deliver the die D to the mount unit 65 at the same delivery position each time. This simplifies the operation of the pickup unit 64.
- the second moving unit 69 may also move the substrate holding unit 62 in the Z-axis direction.
- the bonding device 60 may be equipped with at least one of a first imaging unit 71, a second imaging unit 72, and a third imaging unit 73 to improve the accuracy of the bonding position of the die D relative to the target substrate W.
- the first imaging unit 71, the second imaging unit 72, and the third imaging unit 73 do not have to capture images every time the die D and the target substrate W are bonded, and may instead capture images periodically.
- the first imaging unit 71 captures an image of the alignment marks on the bonding surface Da of the die D held by the second suction head 65a.
- the number of alignment marks to be captured is, for example, two, but is not particularly limited.
- the alignment marks may be dedicated marks or may be part of the electronic circuitry of the die D.
- the first imaging unit 71 is disposed, for example, below the second suction head 65a.
- the first imaging unit 71 transmits the captured image to the control circuit 9.
- the control circuit 9 processes the image captured by the first imaging unit 71 to detect the position of the die D in the first coordinate system set for the second suction head 65a.
- the second imaging unit 72 captures an image of the alignment marks on the bonding surface Wa of the target substrate W held by the substrate holding unit 62.
- the number of alignment marks to be captured is, for example, two, but is not particularly limited.
- the alignment marks may be dedicated marks or may be part of the electronic circuit of the device W2 on the target substrate W.
- the second imaging unit 72 is disposed, for example, above the board holding unit 62, and is provided, for example, on the second suction head 65a.
- the second imaging unit 72 transmits the captured image to the control circuit 9.
- the control circuit 9 processes the image captured by the second imaging unit 72 to detect the position of the device W2 in the second coordinate system set in the board holding unit 62.
- the control circuit 9 uses images captured by at least one of the first imaging unit 71 and the second imaging unit 72 to align the die D held by the second suction head 65a with the device W2 on the target substrate W held by the substrate holder 62. This alignment is performed by controlling at least one of the second movement mechanism 65b and the second movement unit 69. The position of the die D or device W2 can be corrected before bonding the die D and the target substrate W, improving the accuracy of the bonding position.
- the third imaging unit 73 simultaneously captures an image of both the alignment mark on the bonding surface Da of the die D and the alignment mark on the bonding surface Wa of the target substrate W.
- the third imaging unit 73 captures an image of the alignment marks of the die D and the target substrate W, for example, by transmitting light through the die D.
- the third imaging unit 73 is composed of, for example, an infrared camera.
- the third imaging unit 73 When the third imaging unit 73 is to capture an image of the alignment marks of the die D and the target substrate W through the die D, it is disposed, for example, above the substrate holding unit 62, and is provided, for example, on the second suction head 65a.
- the third imaging unit 73 transmits the captured image to the control circuit 9.
- the control circuit 9 processes the image captured by the third imaging unit 73 to detect the deviation between the actual bonding position and the target bonding position.
- the control circuit 9 uses the image captured by the third imaging unit 73 to align the die D held by the second suction head 65a with the target substrate W held by the substrate holder 62 when bonding the die D and target substrate W from the next time onwards.
- the position of the die D or target substrate W can be corrected taking into account the characteristics of the bonding device 60, improving the accuracy of the bonding position.
- the pressing unit 66 according to a reference embodiment will be described with reference to Figure 9.
- the carrier substrate E1 may deform gently around the pressed location, as shown by the dashed line in Figure 9(A).
- an adsorption unit 67 is provided.
- the suction portion 67 suctions the carrier substrate E1 around the pressing portion 66. While the suction portion 67 suppresses deformation of the carrier substrate E1 around the pressing portion 66, the pressing portion 66 deforms the resin film E2.
- the resin film E2 can be deformed only in the vicinity of one of the multiple dies D, forming a wedge-shaped gap between the resin film E2 and the die D.
- the suction portion 67 suppressing gradual deformation of the carrier substrate E1 is particularly effective when the pressing portion 66 presses the resin film E2 with gas pressure. This is because if gradual deformation of the carrier substrate E1 occurs, as shown by the dashed line in Figure 9(A), gas will leak from the gas supply chamber formed between the carrier substrate E1 and the pressing portion 66.
- the pressing unit 66 has, for example, a pressing head 66a.
- the pressing head 66a forms a gas supply chamber between itself and the carrier substrate E1.
- the gas supply chamber communicates with the first through-hole E3.
- the pressing unit 66 has an annular sealing member 66b.
- the sealing member 66b contacts the carrier substrate E1 and seals the gas supply chamber.
- the suction unit 67 has, for example, a suction head 67a.
- the suction head 67a forms a gas suction chamber between itself and the carrier substrate E1.
- the gas suction chamber is formed in a ring shape to surround the gas supply chamber.
- the suction unit 67 has a ring-shaped sealing member 67b.
- the sealing member 67b contacts the carrier substrate E1 and seals the gas suction chamber. By generating a pressure (negative pressure) lower than atmospheric pressure in the gas suction chamber, the carrier substrate E1 can be vacuum-sucked by the pressure difference.
- the carrier holding portion 61 is formed in an annular shape so that the pressing portion 66 and suction portion 67 can contact the carrier substrate E1, and adsorbs the peripheral edge of the underside of the carrier substrate E1.
- the pressing portion 66 and suction portion 67 are positioned inside the annular carrier holding portion 61, and contact the center of the underside of the carrier substrate E1.
- the pressing unit 66 and the suction unit 67 are moved relative to the carrier holding unit 61 to change the die D pressed by the pressing unit 66.
- the first moving unit 68 moves only the carrier holding unit 61 of the carrier holding unit 61 and the pressing unit 66 in the X-axis and Y-axis directions.
- the reference embodiment has the following problems (A1) and (A2).
- A1 Because the pressing portion 66 and the suction portion 67 are arranged inside the annular carrier holding portion 61, the range of movement of the carrier holding portion 61 in the X-axis and Y-axis directions is limited. Furthermore, even if the pressing portion 66 and the suction portion 67 are moved in the X-axis and Y-axis directions instead of the carrier holding portion 61, the range of movement is also limited. As a result, as shown in Figure 9 (B), the position of the die D that can be pressed by the pressing portion 66 is limited. Therefore, the number of dies D that can be mounted on the carrier E is reduced.
- the first moving unit 68 moves the pressing unit 66 and the carrier holding unit 61 relatively, causing the pressing unit 66 and the suction unit 67 to repeatedly come into contact with the carrier E.
- the sealing members 66b, 67b may deteriorate, generating particles and contaminating the carrier E.
- the contamination on the carrier E may be transferred to the die D. Note that when the pressing unit 66 presses the die D with a pin, the pressing unit 66 may not come into contact with the carrier E. However, because the suction unit 67 comes into contact with the carrier E, the carrier E will still become contaminated.
- the reference embodiment has the following problem (A3).
- A3) If the parallelism between the sealing members 66b, 67b and the carrier E is low, pressing the sealing members 66b, 67b hard against the carrier E to prevent gas leakage can cause the carrier E to bend and be damaged. Therefore, the required parallelism accuracy is high, and the work of adjusting the parallelism is tedious.
- this embodiment has the following configurations (B1) to (B2) as shown in FIG. 7(A).
- the carrier holding portion 61 has a first surface 61a against which the carrier E abuts, a second surface 61b facing opposite the first surface 61a, and a plurality of second through holes 61c that penetrate between the first surface 61a and the second surface 61b.
- the pressing portion 66 has a gas supply mechanism 66c that supplies gas to the first through hole E3 via the second through hole 61c. Note that, as shown in FIG. 8, the pressing portion 66 may also have a pin drive mechanism 66e that inserts a pin 66d into the first through hole E3 via the second through hole 61c.
- the pressing unit 66 is positioned on the opposite side of the carrier E from the carrier holding unit 61.
- the first surface 61a of the carrier holding unit 61 is the upper surface and the second surface 61b is, for example, the lower surface
- the pressing unit 66 is provided below the lower surface of the carrier holding unit 61. Therefore, when the first moving unit 68 moves the pressing unit 66 and the carrier holding unit 61 relatively in the X-axis and Y-axis directions to change the die D pressed by the pressing unit 66, no interference occurs between the pressing unit 66 and the carrier holding unit 61, and the range of movement is wide. As a result, as shown in FIG. 7(B), the number of dies D that can be mounted on the carrier E can be increased. This reduces the frequency of carrier E replacement and improves throughput.
- the carrier holding portion 61 suppresses deformation of the carrier substrate E1 around the pressing portion 66, while the pressing portion 66 deforms the resin film E2. Therefore, the suction portion 67 is not required, which makes maintenance easier.
- the carrier holding portion 61 has suction grooves 61d on the first surface 61a that vacuum-suck the carrier substrate E1.
- the diameter of the first surface 61a is preferably equal to or greater than the diameter of the carrier substrate E1 to suppress overall deformation of the carrier substrate E1.
- the suction grooves 61d are preferably provided between adjacent second through holes 61c to locally deform the resin film E2.
- the suction grooves 61d are formed, for example, in a grid pattern.
- the first moving unit 68 moves the pressing unit 66 and the carrier holding unit 61 relative to one another to change the die D pressed by the pressing unit 66, so that the pressing unit 66 repeatedly comes into contact with the carrier holding unit 61 rather than the carrier E.
- the sealing member 66b deteriorates, particles are generated, and the second surface 61b of the carrier holding unit 61 becomes contaminated, the first surface 61a of the carrier holding unit 61 remains almost uncontaminated. Therefore, contamination of the carrier E can be suppressed.
- the sealing member 66b contacts the carrier holding portion 61 rather than the carrier E. If the parallelism between the sealing member 66b and the carrier holding portion 61 is not precise, even if the sealing member 66b is pressed hard against the carrier holding portion 61 to prevent gas leakage, the carrier holding portion 61 will not be damaged because it has higher rigidity than the carrier E. Therefore, the required parallelism precision is low, and the parallelism adjustment work is simple.
- the pressing unit 66 when the pressing unit 66 presses the die D with a pin 66d, the pressing unit 66 does not need to have a sealing member 66b.
- the pressing unit 66 may have a sealing member 66b.
- the pressing unit 66 has a pin drive mechanism 66e, the pressing unit 66 does not need to have a sealing member 66b.
- the gas supply mechanism 66c supplies gas to the first through-hole E3 via the second through-hole 61c.
- the gas supply mechanism 66c has a supply line that forms a gas flow path.
- the gas supply mechanism 66c has, for example, an opening/closing valve and a pressure controller along the supply line.
- the opening/closing valve opens and closes the gas flow path.
- the pressure controller controls the gas pressure.
- the gas supply mechanism 66c may also have a leak valve along the supply line. The leak valve exhausts the gas.
- first through holes E3 and the second through holes 61c are connected one-to-one at the boundary between the carrier holding portion 61 and the carrier E.
- the number of second through holes 61c only needs to be equal to or greater than the number of first through holes E3, and may even be greater than the number of first through holes E3. It is sufficient that the second through holes 61c are located at the locations where the first through holes E3 are present, and the first through holes E3 and the second through holes 61c do not need to be connected one-to-one.
- the opening of the second through hole 61c at the boundary between the carrier holding unit 61 and the carrier E is smaller than the opening of the first through hole E3 and is positioned inside the opening of the first through hole E3.
- gas pressure hardly acts on the underside of the carrier substrate E1, so bending of the carrier substrate E1 can be suppressed.
- the pressing unit 66 may use multiple second through holes 61c and multiple first through holes E3 to press one die D.
- the pressing unit 66 may supply gas to multiple first through holes E3 via multiple second through holes 61c as shown in FIG. 7(A), or may insert a pin 66d as shown in FIG. 8.
- One die D can be pressed at multiple points. It is also possible to divide the multiple points into multiple groups and press them in sequence.
- the pin drive mechanism 66e shown in Figure 8 has an actuator that drives the pin 66d.
- the pin 66d Before the first moving unit 68 moves the pressing unit 66 and the carrier holding unit 61 relatively in the X-axis and Y-axis directions to change the die D pressed by the pressing unit 66, the pin 66d is withdrawn from the first through hole E3 and the second through hole 61c. The pin 66d is then inserted into the first through hole E3 via the second through hole 61c and presses the die D.
- Bonding device 61 Carrier holding part 61a First surface 61b Second surface 61c Second through-hole 62 Substrate holding part 66 Pressing part 66c Gas supply mechanism 66d Pin 66e Pin driving mechanism 68 First moving part W Target substrate D Die E Carrier E1 Carrier substrate E2 Resin film E3 First through-hole
Landscapes
- Die Bonding (AREA)
Abstract
Description
本開示は、接合装置、及び接合方法に関する。 This disclosure relates to a joining device and a joining method.
特許文献1に記載のチップ実装システムは、チップ供給装置と、ボンディング装置と、表面処理装置と、搬出入部と、搬送部と、を備える(特許文献1の段落[0225])。チップ供給装置は、複数のチップを個別に供給する。チップは、フレームの開口部を覆うテープに接着されており、1個ずつ上方に突き上げられ、1個ずつ上下反転される(特許文献1の段落[0251])。ボンディング装置は、チップ供給装置から供給されたチップを基板上に取り付ける。 The chip mounting system described in Patent Document 1 comprises a chip supply device, a bonding device, a surface treatment device, a carry-in/out section, and a transport section (paragraph [0225] of Patent Document 1). The chip supply device supplies multiple chips individually. The chips are adhered to tape covering the opening of the frame, and are pushed upward one by one and turned upside down one by one (paragraph [0251] of Patent Document 1). The bonding device attaches the chips supplied from the chip supply device onto a substrate.
本開示の一実施形態は、キャリアに搭載可能なダイの数を増やすと共に、キャリアの汚れを抑制する、技術を提供する。 One embodiment of the present disclosure provides technology that increases the number of dies that can be mounted on a carrier while suppressing carrier contamination.
本開示の一実施形態に係る接合装置は、複数のダイをキャリアから分離してターゲット基板に接合する。前記キャリアは、キャリア基板と、前記キャリア基板を厚さ方向に貫通する複数の第1貫通孔と、前記キャリア基板に設けられる樹脂膜と、を有し、前記樹脂膜の上に複数の前記ダイを装着する。前記接合装置は、前記キャリアを保持するキャリア保持部と、前記第1貫通孔にガスを供給すること又は前記第1貫通孔にピンを差し込むことで前記ダイを押す押圧部と、前記押圧部が押す前記ダイを変更すべく前記押圧部と前記キャリア保持部とを相対的に移動させる第1移動部と、を備える。前記キャリア保持部は、前記キャリアが当接する第1面と、前記第1面とは反対向きの第2面と、前記第1面と前記第2面の間を貫通する複数の第2貫通孔を有する。前記押圧部は、前記第2貫通孔を経由して前記第1貫通孔にガスを供給するガス供給機構、又は前記第2貫通孔を経由して前記第1貫通孔にピンを差し込むピン駆動機構を有する。 A bonding apparatus according to one embodiment of the present disclosure separates multiple dies from a carrier and bonds them to a target substrate. The carrier has a carrier substrate, multiple first through holes penetrating the carrier substrate in the thickness direction, and a resin film provided on the carrier substrate, with the multiple dies mounted on the resin film. The bonding apparatus includes a carrier holding unit that holds the carrier, a pressing unit that presses the dies by supplying gas to the first through holes or by inserting pins into the first through holes, and a first moving unit that relatively moves the pressing unit and the carrier holding unit to change the die being pressed by the pressing unit. The carrier holding unit has a first surface against which the carrier abuts, a second surface facing opposite the first surface, and multiple second through holes penetrating between the first surface and the second surface. The pressing unit has a gas supply mechanism that supplies gas to the first through holes via the second through holes, or a pin driving mechanism that inserts pins into the first through holes via the second through holes.
本開示の一実施形態によれば、キャリアに搭載可能なダイの数を増やすと共に、キャリアの汚れを抑制することができる。 According to one embodiment of the present disclosure, it is possible to increase the number of dies that can be mounted on a carrier while suppressing contamination of the carrier.
以下、本開示の実施形態について図面を参照して説明する。なお、各図面において同一の又は類似の構成には同一の符号を付し、説明を省略することがある。本明細書において、X軸方向、Y軸方向、Z軸方向は互いに垂直な方向である。X軸方向及びY軸方向は水平方向、Z軸方向は鉛直方向である。X軸方向は、X軸正方向と、X軸正方向とは反対方向であるX軸負方向とを含む。Y軸方向は、Y軸正方向と、Y軸正方向とは反対方向であるY軸負方向とを含む。Z軸方向は、Z軸正方向と、Z軸正方向とは反対方向であるZ軸負方向とを含む。 Embodiments of the present disclosure will be described below with reference to the drawings. Note that identical or similar components in each drawing will be given the same reference numerals, and descriptions thereof may be omitted. In this specification, the X-axis, Y-axis, and Z-axis directions are perpendicular to one another. The X-axis and Y-axis directions are horizontal directions, and the Z-axis direction is vertical. The X-axis direction includes the positive X-axis direction and the negative X-axis direction, which is the direction opposite to the positive X-axis direction. The Y-axis direction includes the positive Y-axis direction and the negative Y-axis direction, which is the direction opposite to the positive Y-axis direction. The Z-axis direction includes the positive Z-axis direction and the negative Z-axis direction, which is the direction opposite to the positive Z-axis direction.
図1を参照して、一実施形態に係る接合システム1について説明する。接合システム1は、複数のダイをキャリアから分離してターゲット基板Wに接合する。図2(A)に示すように、ターゲット基板Wは、シリコンウェハなどの半導体基板W1と、半導体基板W1の上に形成された複数のデバイスW2と、を有する。複数のデバイスW2は、互いに直交する複数本のストリートで区画される。各デバイスW2は、電子回路を含む。図2(B)に示すように、各デバイスW2には、ダイDが電気的に接続される。その後、ターゲット基板Wをストリートに沿って切断してデバイスW2ごとに個片化することで半導体装置が得られる。半導体装置は、デバイスW2とダイDとを含む。 With reference to Figure 1, a bonding system 1 according to one embodiment will be described. The bonding system 1 separates multiple dies from a carrier and bonds them to a target substrate W. As shown in Figure 2(A), the target substrate W has a semiconductor substrate W1, such as a silicon wafer, and multiple devices W2 formed on the semiconductor substrate W1. The multiple devices W2 are partitioned by multiple streets that intersect each other at right angles. Each device W2 includes an electronic circuit. As shown in Figure 2(B), a die D is electrically connected to each device W2. The target substrate W is then cut along the streets to separate each device W2, thereby obtaining a semiconductor device. The semiconductor device includes the device W2 and the die D.
ダイDは、デバイスW2とは別のデバイスが複数形成された半導体基板を、デバイスごとに個片化したものである。ダイDのデバイスの電子回路と、ターゲット基板WのデバイスW2の電子回路とが電気的に接続される。なお、一のデバイスW2に対して電気的に接続されるダイDの種類と数は、特に限定さない。図示しないが、一のデバイスW2に対して複数のダイDが電気的に接続されてもよい。 Die D is formed by dividing a semiconductor substrate on which multiple devices other than device W2 are formed into individual devices. The electronic circuitry of die D is electrically connected to the electronic circuitry of device W2 on the target substrate W. Note that the type and number of die D electrically connected to one device W2 are not particularly limited. Although not shown, multiple die D may be electrically connected to one device W2.
図3に示すように、キャリアEは、ダイDを複数保持する。キャリアEは、各ダイDの接合面Daを上に向けて各ダイを保持する。これにより、各ダイDの接合面Daの活性化および親水化が可能である。キャリアEは、キャリア基板E1と、キャリア基板E1におけるダイDとの対向面に設けられる樹脂膜E2とを有する。 As shown in Figure 3, carrier E holds multiple dies D. Carrier E holds each die D with its bonding surface Da facing upward. This allows the bonding surface Da of each die D to be activated and hydrophilized. Carrier E has a carrier substrate E1 and a resin film E2 provided on the surface of carrier substrate E1 facing the die D.
キャリアEは、樹脂膜E2の上にダイDを複数保持する。キャリアEは、ダイDを例えば静電吸着する。なお、ダイDを樹脂膜E2に押し付けることで、ダイDと樹脂膜E2の間からガスを抜くように樹脂膜E2を変形でき、樹脂膜E2にダイDを真空吸着させることも可能である。キャリアEは、分子間力でダイDを吸着することも可能である。 Carrier E holds multiple dies D on resin film E2. Carrier E adsorbs dies D, for example, electrostatically. By pressing dies D against resin film E2, it is possible to deform resin film E2 so as to remove gas from between dies D and resin film E2, and it is also possible to vacuum-adsorb dies D to resin film E2. Carrier E can also adsorb dies D using intermolecular forces.
キャリア基板E1は、導電性を有してもよいし、絶縁性を有してもよい。キャリア基板E1には、キャリア基板E1を厚み方向に貫通する第1貫通孔E3が形成される。第1貫通孔E3にガスを供給すること、又は第1貫通孔E3に図示しないピンを差し込むことで、ダイDをキャリアEから剥離できる。第1貫通孔E3の数及び配置は、特に限定されない。第1貫通孔E3は、ダイDごとに1つ以上形成されればよい。 The carrier substrate E1 may be conductive or insulating. First through holes E3 are formed in the carrier substrate E1, penetrating the carrier substrate E1 in the thickness direction. The die D can be peeled off from the carrier E by supplying gas to the first through holes E3 or by inserting a pin (not shown) into the first through holes E3. The number and arrangement of the first through holes E3 are not particularly limited. One or more first through holes E3 may be formed for each die D.
樹脂膜E2は、柔軟性を有する材料、具体的には弾性率が2GPa以下、より好ましくは0.5GPa以下である材料で構成されることが好ましい。樹脂膜E2は、ダイDの接合面Daの改質時における耐久性の観点から、例えばポリイミド又はEVA(エチレン・酢酸ビニル共重合体)で構成されることが好ましい。樹脂膜E2の厚みは、例えば10μmである。なお、樹脂膜E2は、本実施形態では単層であるが、複数層でもよい。例えば、樹脂膜E2は、ポリオレフィン層と、アクリル粘着剤層とを有してもよい。 The resin film E2 is preferably made of a flexible material, specifically a material with an elastic modulus of 2 GPa or less, more preferably 0.5 GPa or less. From the perspective of durability when modifying the bonding surface Da of the die D, the resin film E2 is preferably made of, for example, polyimide or EVA (ethylene-vinyl acetate copolymer). The thickness of the resin film E2 is, for example, 10 μm. In this embodiment, the resin film E2 is a single layer, but it may be made of multiple layers. For example, the resin film E2 may have a polyolefin layer and an acrylic adhesive layer.
図1に示すように、接合システム1は、搬入出ステーション2と、第1処理ステーション3と、第2処理ステーション5と、制御回路9と、を備える。搬入出ステーション2と、第1処理ステーション3とは、第2処理ステーション5とはこの順番で、X軸負方向側からX軸正方向側に一列に並ぶ。なお、図示しないが、第2処理ステーション5は複数設けられてもよく、複数の第2処理ステーション5がX軸負方向側からX軸正方向側に一列に並んでもよい。 As shown in FIG. 1, the bonding system 1 comprises a loading/unloading station 2, a first processing station 3, a second processing station 5, and a control circuit 9. The loading/unloading station 2, the first processing station 3, and the second processing station 5 are arranged in a line, in this order, from the negative side of the X-axis to the positive side of the X-axis. Although not shown, multiple second processing stations 5 may be provided, and multiple second processing stations 5 may be arranged in a line from the negative side of the X-axis to the positive side of the X-axis.
搬入出ステーション2は、載置台20を備える。載置台20には、カセットC1~C4が載置される。カセットC1は、ダイDを接合する前のターゲット基板Wを収容する。カセットC2は、ダイDを接合した後のターゲット基板Wを収容する。カセットC3は、ダイDを分離する前のキャリアEを収容する。カセットC4は、ダイDを分離した後のキャリアEを収容する。 The loading/unloading station 2 includes a mounting table 20. Cassettes C1 to C4 are placed on the mounting table 20. Cassette C1 contains a target substrate W before a die D is bonded to it. Cassette C2 contains a target substrate W after a die D has been bonded to it. Cassette C3 contains a carrier E before the die D has been separated from it. Cassette C4 contains a carrier E after the die D has been separated from it.
搬入出ステーション2は、第1搬送領域21と第1搬送装置22とを備える。第1搬送領域21は、載置台20に隣接する。第1搬送領域21は、Y軸方向に延びている。第1搬送装置22は、搬送アームを有する。搬送アームは、第1搬送領域21において、ターゲット基板WおよびキャリアEを保持して搬送する。搬送アームの数は、1つでも複数でもよい。ターゲット基板W用の搬送アームと、キャリアE用の搬送アームとは別々に設けられてもよい。第1搬送装置22は、搬送アームを移動又は回転させる図示しない駆動部を有する。搬送アームは、水平方向(X軸方向及びY軸方向の両方向)及び鉛直方向(Z軸方向)の移動と、鉛直軸を中心とする回転とが可能である。 The loading/unloading station 2 comprises a first transfer area 21 and a first transfer device 22. The first transfer area 21 is adjacent to the mounting table 20. The first transfer area 21 extends in the Y-axis direction. The first transfer device 22 has a transfer arm. The transfer arm holds and transfers the target substrate W and carrier E in the first transfer area 21. The number of transfer arms may be one or more. The transfer arm for the target substrate W and the transfer arm for the carrier E may be provided separately. The first transfer device 22 has a drive unit (not shown) that moves or rotates the transfer arm. The transfer arm can move horizontally (in both the X-axis and Y-axis directions) and vertically (in the Z-axis direction), and can rotate around the vertical axis.
第1処理ステーション3は、第1保管装置30を備える。第1保管装置30は、第1搬送領域21に隣接する。第1保管装置30は、第1搬送領域21を基準として、載置台20とは反対側に配置される。第1保管装置30は、ターゲット基板W及びキャリアEを一時的に保管する。第1保管装置30は、鉛直方向に並ぶ複数のステージを有する。各ステージは、ターゲット基板W及びキャリアEを載置する。ターゲット基板W用のステージと、キャリアE用のステージとは別々に設けられてもよい。 The first processing station 3 includes a first storage device 30. The first storage device 30 is adjacent to the first transfer area 21. The first storage device 30 is positioned on the opposite side of the first transfer area 21 from the mounting table 20. The first storage device 30 temporarily stores target substrates W and carriers E. The first storage device 30 has multiple stages arranged vertically. Each stage holds a target substrate W and a carrier E. The stage for the target substrates W and the stage for the carriers E may be provided separately.
第1処理ステーション3は、第2搬送領域31と第2搬送装置32とを備える。第2搬送領域31は、第1保管装置30に隣接しており、第1保管装置30からX軸正方向に延びている。第2搬送装置32は、搬送アームを有する。搬送アームは、第2搬送領域31において、ターゲット基板WおよびキャリアEを保持して搬送する。搬送アームの数は、1つでも複数でもよい。ターゲット基板W用の搬送アームと、キャリアE用の搬送アームとは別々に設けられてもよい。第2搬送装置32は、搬送アームを移動又は回転させる図示しない駆動部を有する。搬送アームは、水平方向(X軸方向及びY軸方向の両方向)及び鉛直方向(Z軸方向)の移動と、鉛直軸を中心とする回転とが可能である。 The first processing station 3 comprises a second transfer area 31 and a second transfer device 32. The second transfer area 31 is adjacent to the first storage device 30 and extends from the first storage device 30 in the positive direction of the X-axis. The second transfer device 32 has a transfer arm. The transfer arm holds and transfers the target substrate W and carrier E in the second transfer area 31. The number of transfer arms may be one or more. The transfer arm for the target substrate W and the transfer arm for the carrier E may be provided separately. The second transfer device 32 has a drive unit (not shown) that moves or rotates the transfer arm. The transfer arm can move horizontally (in both the X-axis and Y-axis directions) and vertically (in the Z-axis direction), and can rotate around the vertical axis.
第1処理ステーション3は、第1活性化装置33と、第1親水化装置34と、第2活性化装置35と、第2親水化装置36と、を備える。第1活性化装置33と第1親水化装置34と第2活性化装置35と第2親水化装置36は、第2搬送領域31に隣接しており、第2搬送領域31のY軸正方向側またはY軸負方向側に設けられる。 The first processing station 3 includes a first activation device 33, a first hydrophilization device 34, a second activation device 35, and a second hydrophilization device 36. The first activation device 33, the first hydrophilization device 34, the second activation device 35, and the second hydrophilization device 36 are adjacent to the second transport region 31 and are provided on the positive Y-axis side or the negative Y-axis side of the second transport region 31.
第1活性化装置33は、キャリアEがダイDを装着した状態で、ダイDの接合面Daを活性化する。第1活性化装置33は、例えばプラズマ処理装置である。第1活性化装置33では、例えば減圧下において処理ガスである酸素ガスが励起されてプラズマ化され、イオン化される。酸素イオンが接合面Daに照射されることにより、接合面Daが活性化される。処理ガスは、酸素ガスには限定されず、例えば窒素ガスなどでもよい。 The first activation device 33 activates the bonding surface Da of the die D while the die D is attached to the carrier E. The first activation device 33 is, for example, a plasma processing device. In the first activation device 33, oxygen gas, which is the processing gas, is excited under reduced pressure, for example, to form plasma and is ionized. The bonding surface Da is activated by irradiating it with oxygen ions. The processing gas is not limited to oxygen gas, and may be, for example, nitrogen gas.
第1親水化装置34は、キャリアEがダイDを装着した状態で、ダイDの接合面Daを親水化する。例えば、第1親水化装置34は、スピンチャックに保持されているキャリアEを回転させながら、接合面Daに純水(例えば脱イオン水)を供給する。純水は、予め活性化された接合面DaにOH基を付与する。OH基同士の水素結合を利用して、ダイDとターゲット基板Wを接合できる。 The first hydrophilization device 34 hydrophilizes the bonding surface Da of the die D while the die D is attached to the carrier E. For example, the first hydrophilization device 34 supplies pure water (e.g., deionized water) to the bonding surface Da while rotating the carrier E held by the spin chuck. The pure water imparts OH groups to the pre-activated bonding surface Da. The die D and target substrate W can be bonded using hydrogen bonds between the OH groups.
第2活性化装置35は、ターゲット基板Wの接合面Waを活性化する。第2活性化装置35は、例えばプラズマ処理装置である。第2活性化装置35では、例えば減圧下において処理ガスである酸素ガスが励起されてプラズマ化され、イオン化される。酸素イオンが接合面Waに照射されることにより、接合面Waが活性化される。処理ガスは、酸素ガスには限定されず、例えば窒素ガスなどでもよい。 The second activation device 35 activates the bonding surface Wa of the target substrate W. The second activation device 35 is, for example, a plasma processing device. In the second activation device 35, oxygen gas, which is the processing gas, is excited under reduced pressure, for example, and turned into plasma and ionized. The bonding surface Wa is activated by irradiating the oxygen ions onto the bonding surface Wa. The processing gas is not limited to oxygen gas, and may be, for example, nitrogen gas.
第2親水化装置36は、ターゲット基板Wの接合面Waを親水化する。例えば、第2親水化装置36は、スピンチャックに保持されているターゲット基板Wを回転させながら、接合面Waに純水(例えば脱イオン水)を供給する。純水は、予め活性化された接合面WaにOH基を付与する。OH基同士の水素結合を利用して、ダイDとターゲット基板Wを接合できる。 The second hydrophilization device 36 hydrophilizes the bonding surface Wa of the target substrate W. For example, the second hydrophilization device 36 supplies pure water (e.g., deionized water) to the bonding surface Wa while rotating the target substrate W held by the spin chuck. The pure water imparts OH groups to the pre-activated bonding surface Wa. The die D and the target substrate W can be bonded using hydrogen bonds between the OH groups.
第2処理ステーション5は、第2保管装置50を備える。第2保管装置50は、第2搬送領域31に隣接する。第2保管装置50は、第2搬送領域31を基準として、第1保管装置30とは反対側に配置される。第2保管装置50は、ターゲット基板W及びキャリアEを一時的に保管する。第2保管装置50は、鉛直方向に並ぶ複数のステージを有する。各ステージは、ターゲット基板WとキャリアEの少なくとも1つを載置する。ターゲット基板W用のステージと、キャリアE用のステージとは別々に設けられてもよい。 The second processing station 5 includes a second storage device 50. The second storage device 50 is adjacent to the second transport area 31. The second storage device 50 is positioned on the opposite side of the second transport area 31 from the first storage device 30. The second storage device 50 temporarily stores target substrates W and carriers E. The second storage device 50 has multiple stages arranged vertically. Each stage holds at least one of the target substrates W and carriers E. The stage for the target substrates W and the stage for the carriers E may be provided separately.
第2処理ステーション5は、第3搬送領域51と第3搬送装置52とを備える。第3搬送領域51は、第2保管装置50に隣接しており、第2保管装置50からX軸正方向に延びている。第3搬送装置52は、搬送アームを有する。搬送アームは、第3搬送領域51において、ターゲット基板WおよびキャリアEを保持して搬送する。搬送アームの数は、1つでも複数でもよい。ターゲット基板W用の搬送アームと、キャリアE用の搬送アームとは別々に設けられてもよい。第3搬送装置52は、搬送アームを移動又は回転させる図示しない駆動部を有する。搬送アームは、水平方向(X軸方向及びY軸方向の両方向)及び鉛直方向(Z軸方向)の移動と、鉛直軸を中心とする回転とが可能である。 The second processing station 5 comprises a third transfer region 51 and a third transfer device 52. The third transfer region 51 is adjacent to the second storage device 50 and extends from the second storage device 50 in the positive direction of the X-axis. The third transfer device 52 has a transfer arm. The transfer arm holds and transfers the target substrate W and carrier E in the third transfer region 51. The number of transfer arms may be one or more. The transfer arm for the target substrate W and the transfer arm for the carrier E may be provided separately. The third transfer device 52 has a drive unit (not shown) that moves or rotates the transfer arm. The transfer arm can move horizontally (in both the X-axis and Y-axis directions) and vertically (in the Z-axis direction), and can rotate around the vertical axis.
第2処理ステーション5は、接合装置60を備える。接合装置60は、第3搬送領域51に隣接しており、第3搬送領域51のY軸正方向側またはY軸負方向側に設けられる。接合装置60は、キャリアEからダイDを分離し、分離したダイDの接合面Daをターゲット基板Wの接合面Waに向けてダイDとターゲット基板Wを接合する。接合装置60の詳細は後述する。 The second processing station 5 is equipped with a bonding device 60. The bonding device 60 is adjacent to the third transfer region 51 and is provided on the positive Y-axis side or the negative Y-axis side of the third transfer region 51. The bonding device 60 separates the die D from the carrier E and bonds the die D to the target substrate W by orienting the bonding surface Da of the separated die D toward the bonding surface Wa of the target substrate W. Details of the bonding device 60 will be described later.
制御回路9は、例えばコンピュータである。制御回路9は、例えばCPU(Central Processing Unit)などの演算部91と、メモリなどの記憶部92と、を備える。記憶部92には、接合システム1において実行される各種の処理を制御するプログラムが格納される。制御回路9は、記憶部92に記憶されたプログラムを演算部91に実行させることにより、接合システム1の動作を制御する。接合システム1を構成する装置ごとに装置の動作を制御する下位の制御回路が設けられ、複数の下位の制御回路を統括制御する上位の制御回路が設けられてもよい。複数の下位の制御回路と上位の制御回路とで制御回路9が構成されてもよい。 The control circuit 9 is, for example, a computer. The control circuit 9 includes an arithmetic unit 91 such as a CPU (Central Processing Unit), and a storage unit 92 such as a memory. The storage unit 92 stores programs that control the various processes executed in the bonding system 1. The control circuit 9 controls the operation of the bonding system 1 by having the arithmetic unit 91 execute the programs stored in the storage unit 92. A lower-level control circuit that controls the operation of each device that makes up the bonding system 1 may be provided, and a higher-level control circuit that controls multiple lower-level control circuits may be provided. The control circuit 9 may be made up of multiple lower-level control circuits and a higher-level control circuit.
制御回路9は、CPU、GPU(Graphics Processing Unit)、FPGA(Field Programmable Gate Array)又はASIC(Application Specific Integrated Circuit)等の電子回路を含み、メモリに格納された命令コードを実行することにより、または特殊用途向けに回路設計されることにより、本願明細書に記載の各種制御動作を実行する。 The control circuit 9 includes electronic circuits such as a CPU, GPU (Graphics Processing Unit), FPGA (Field Programmable Gate Array), or ASIC (Application Specific Integrated Circuit), and performs the various control operations described in this specification by executing instruction codes stored in memory or by being a circuit designed for a specific application.
次に、図4を参照して、一実施形態に係る接合方法について説明する。図4の処理は、制御回路9による制御下で実施される。先ず、第1搬送装置22が、カセットC3からキャリアEを取り出し、第1保管装置30に搬送する。次に、第2搬送装置32が、第1保管装置30からキャリアEを取り出し、第1活性化装置33に搬送する。 Next, a bonding method according to one embodiment will be described with reference to Figure 4. The process in Figure 4 is carried out under the control of the control circuit 9. First, the first transport device 22 removes carrier E from cassette C3 and transports it to the first storage device 30. Next, the second transport device 32 removes carrier E from the first storage device 30 and transports it to the first activation device 33.
次に、第1活性化装置33が、キャリアEがダイDを装着した状態で、ダイDの接合面Daを活性化する(ステップS101)。その後、第2搬送装置32が、第1活性化装置33からキャリアEを取り出し、第1親水化装置34に搬送する。 Next, the first activation device 33 activates the bonding surface Da of the die D with the carrier E attached to it (step S101). After that, the second transport device 32 removes the carrier E from the first activation device 33 and transports it to the first hydrophilization device 34.
次に、第1親水化装置34が、キャリアEがダイDを装着した状態で、ダイDの接合面Daを親水化する(ステップS102)。その後、第2搬送装置32が、第1親水化装置34からキャリアEを取り出し、第2保管装置50に搬送する。続いて、第3搬送装置52が、第2保管装置50からキャリアEを取り出し、接合装置60に搬送する。 Next, the first hydrophilization device 34 hydrophilizes the bonding surface Da of the die D with the die D attached to the carrier E (step S102). The second transport device 32 then removes the carrier E from the first hydrophilization device 34 and transports it to the second storage device 50. The third transport device 52 then removes the carrier E from the second storage device 50 and transports it to the bonding device 60.
上記ステップS101~S102と並行して、下記ステップS103~S104が行われる。先ず、第1搬送装置22が、カセットC1からターゲット基板Wを取り出し、第1保管装置30に搬送する。次に、第2搬送装置32が、第1保管装置30からターゲット基板Wを取り出し、第2活性化装置35に搬送する。 In parallel with steps S101 and S102 above, steps S103 and S104 below are performed. First, the first transfer device 22 removes the target substrate W from the cassette C1 and transfers it to the first storage device 30. Next, the second transfer device 32 removes the target substrate W from the first storage device 30 and transfers it to the second activation device 35.
次に、第2活性化装置35が、ターゲット基板Wの接合面Waを活性化する(ステップS103)。その後、第2搬送装置32が、第2活性化装置35からターゲット基板Wを取り出し、第2親水化装置36に搬送する。 Next, the second activation device 35 activates the bonding surface Wa of the target substrate W (step S103). After that, the second transport device 32 removes the target substrate W from the second activation device 35 and transports it to the second hydrophilization device 36.
次に、第2親水化装置36が、ターゲット基板Wの接合面Waを親水化する(ステップS104)。その後、第2搬送装置32が、第2親水化装置36からターゲット基板Wを取り出し、第2保管装置50に搬送する。続いて、第3搬送装置52が、第2保管装置50からターゲット基板Wを取り出し、接合装置60に搬送する。 Next, the second hydrophilization device 36 hydrophilizes the bonding surface Wa of the target substrate W (step S104). After that, the second transfer device 32 removes the target substrate W from the second hydrophilization device 36 and transfers it to the second storage device 50. Next, the third transfer device 52 removes the target substrate W from the second storage device 50 and transfers it to the bonding device 60.
次に、接合装置60が、ダイDをキャリアEから分離し、分離したダイDの接合面Daをターゲット基板Wの接合面Waに向けて、ダイDとターゲット基板Wを接合する(ステップS105)。なお、一のデバイスW2に対して複数のダイDが電気的に接続される場合、ダイDとターゲット基板Wの接合は、ダイDの種類ごとに行われる。 Next, the bonding device 60 separates the die D from the carrier E and bonds the die D to the target substrate W by orienting the bonding surface Da of the separated die D toward the bonding surface Wa of the target substrate W (step S105). Note that if multiple dies D are electrically connected to one device W2, the bonding of the die D to the target substrate W is performed for each type of die D.
ダイDを接合した後のターゲット基板Wは、カセットC2に搬送される。先ず、第3搬送装置52が、ターゲット基板Wを接合装置60から取り出し、第2保管装置50に搬送する。次に、第2搬送装置32が、ターゲット基板Wを第2保管装置50から取り出し、第1保管装置30に搬送する。最後に、第1搬送装置22が、ターゲット基板Wを第1保管装置30から取り出し、カセットC2に収納する。 After the die D has been bonded, the target substrate W is transported to cassette C2. First, the third transport device 52 removes the target substrate W from the bonding device 60 and transports it to the second storage device 50. Next, the second transport device 32 removes the target substrate W from the second storage device 50 and transports it to the first storage device 30. Finally, the first transport device 22 removes the target substrate W from the first storage device 30 and stores it in cassette C2.
なお、ダイDを分離した後のキャリアEは、カセットC4に収納される。先ず、第3搬送装置52が、キャリアEを接合装置60から取り出し、第2保管装置50に搬送する。次に、第2搬送装置32が、キャリアEを第2保管装置50から取り出し、第1保管装置30に搬送する。最後に、第1搬送装置22が、キャリアEを第1保管装置30から取り出し、カセットC4に収納する。 After the die D is separated, the carrier E is stored in cassette C4. First, the third conveying device 52 removes the carrier E from the joining device 60 and transports it to the second storage device 50. Next, the second conveying device 32 removes the carrier E from the second storage device 50 and transports it to the first storage device 30. Finally, the first conveying device 22 removes the carrier E from the first storage device 30 and stores it in cassette C4.
次に、図5及び図6を参照して、一実施形態に係る接合装置60について説明する。接合装置60は、複数のダイDをキャリアEから分離してターゲット基板Wに接合する。例えば、接合装置60は、複数のダイDを1つずつ順番にキャリアEから分離してターゲット基板Wに接合する。 Next, a bonding apparatus 60 according to one embodiment will be described with reference to Figures 5 and 6. The bonding apparatus 60 separates multiple dies D from a carrier E and bonds them to a target substrate W. For example, the bonding apparatus 60 sequentially separates multiple dies D one by one from the carrier E and bonds them to the target substrate W.
接合装置60は、例えば、キャリア保持部61と、基板保持部62と、搬送部63と、を備える。キャリア保持部61は、キャリアEを保持する。キャリア保持部61は、本実施形態ではダイDの接合面Daを上方に向けてキャリアEを下方から保持するが、ダイDの接合面Daを下方に向けてキャリアEを上方から保持してもよい。基板保持部62は、ターゲット基板Wを保持する。基板保持部62は、本実施形態ではターゲット基板Wの接合面Waを上方に向けてターゲット基板Wを下方から保持するが、ターゲット基板Wの接合面Waを下方に向けてターゲット基板Wを上方から保持してもよい。搬送部63は、キャリア保持部61で保持されているキャリアEから、基板保持部62で保持されているターゲット基板Wに、ダイDを搬送する。 The bonding device 60 includes, for example, a carrier holding unit 61, a substrate holding unit 62, and a transport unit 63. The carrier holding unit 61 holds the carrier E. In this embodiment, the carrier holding unit 61 holds the carrier E from below with the joining surface Da of the die D facing upward, but it may also hold the carrier E from above with the joining surface Da of the die D facing downward. The substrate holding unit 62 holds the target substrate W. In this embodiment, the substrate holding unit 62 holds the target substrate W from below with the joining surface Wa of the target substrate W facing upward, but it may also hold the target substrate W from above with the joining surface Wa of the target substrate W facing downward. The transport unit 63 transports the die D from the carrier E held by the carrier holding unit 61 to the target substrate W held by the substrate holding unit 62.
搬送部63は、例えば、ピックアップ部64とマウント部65を備える。ピックアップ部64は、キャリア保持部61で保持されているキャリアEからダイDを分離して搬送する。ピックアップ部64は、ダイDの搬送中に、ダイDを上下反転してもよい。ダイDの接合面Daを下に向けることができる。マウント部65は、ピックアップ部64からダイDを受け取り、受け取ったダイDを基板保持部62で保持されているターゲット基板Wに接合する。 The transport unit 63 includes, for example, a pickup unit 64 and a mount unit 65. The pickup unit 64 separates the die D from the carrier E held by the carrier holding unit 61 and transports it. The pickup unit 64 may turn the die D upside down while transporting it. The bonding surface Da of the die D can face downward. The mount unit 65 receives the die D from the pickup unit 64 and bonds the received die D to the target substrate W held by the substrate holding unit 62.
ピックアップ部64は、例えば、第1吸着ヘッド64aと、第1移動機構64bと、を有する。第1吸着ヘッド64aは、ダイDを吸着する。第1吸着ヘッド64aは、ダイDの接合面Daを吸着するので、その接合面Daを汚染しないように非接触で吸着してもよい。第1移動機構64bは、第1吸着ヘッド64aをX軸方向とY軸方向とZ軸方向に移動させる。また、第1移動機構64bは、第1吸着ヘッド64aを上下反転させることで、ダイDを上下反転させてもよい。ダイDの接合面Daを上下反転できる。 The pickup unit 64 has, for example, a first suction head 64a and a first moving mechanism 64b. The first suction head 64a picks up the die D. The first suction head 64a picks up the joining surface Da of the die D, and may therefore pick up the die D without contact to avoid contaminating the joining surface Da. The first moving mechanism 64b moves the first suction head 64a in the X-axis, Y-axis, and Z-axis directions. The first moving mechanism 64b may also turn the first suction head 64a upside down, thereby turning the die D upside down. The joining surface Da of the die D can be turned upside down.
マウント部65は、例えば、第2吸着ヘッド65aと、第2移動機構65bと、を有する。第2吸着ヘッド65aは、第1吸着ヘッド64aとは反対側からダイDを吸着する。第2吸着ヘッド65aは、ダイDの接合面Daとは反対側の面Dbを吸着する。接合面Daとは反対側の面Dbは汚れても問題ないので、第2吸着ヘッド65aはダイDに接触してもよい。吸着力を向上でき、位置ずれを抑制できる。 The mount unit 65 has, for example, a second suction head 65a and a second movement mechanism 65b. The second suction head 65a suctions the die D from the side opposite the first suction head 64a. The second suction head 65a suctions the surface Db of the die D opposite the joining surface Da. Since it is not a problem if the surface Db opposite the joining surface Da becomes dirty, the second suction head 65a may come into contact with the die D. This improves suction force and prevents misalignment.
第2移動機構65bは、第2吸着ヘッド65aをZ軸方向に移動させることで、ダイDをターゲット基板Wに接合する。第2移動機構65bは、接合位置の精度を向上すべく、第2吸着ヘッド65aをX軸方向とY軸方向に移動させてもよいし、鉛直軸を中心に第2吸着ヘッド65aを回転させてもよい。接合位置の精度向上に必要な移動量又は回転量は小さく、上方から見て、第2吸着ヘッド65aはほとんど動かなくてよい。 The second movement mechanism 65b moves the second suction head 65a in the Z-axis direction to bond the die D to the target substrate W. To improve the accuracy of the bonding position, the second movement mechanism 65b may move the second suction head 65a in the X-axis and Y-axis directions, or may rotate the second suction head 65a around the vertical axis. The amount of movement or rotation required to improve the accuracy of the bonding position is small, so when viewed from above, the second suction head 65a does not need to move much.
接合装置60は、押圧部66を備える。押圧部66は、例えばキャリア基板E1の第1貫通孔E3にガスを供給すること、又はその第1貫通孔E3に図示しないピンを差し込むことで、樹脂膜E2を押す。押す方向は、樹脂膜E2をキャリア基板E1から離す方向である。複数のダイDのうち、一のダイDの近傍のみにおいて、樹脂膜E2を変形でき、樹脂膜E2とダイDの間にくさび状の隙間を形成でき、樹脂膜E2からダイDを円滑に分離できる。 The bonding device 60 is equipped with a pressing unit 66. The pressing unit 66 presses the resin film E2, for example, by supplying gas to the first through-hole E3 of the carrier substrate E1 or by inserting a pin (not shown) into the first through-hole E3. The pressing direction is a direction in which the resin film E2 moves away from the carrier substrate E1. The resin film E2 can be deformed only in the vicinity of one of the multiple dies D, forming a wedge-shaped gap between the resin film E2 and the die D and allowing the die D to be smoothly separated from the resin film E2.
接合装置60は、第1移動部68を備える。第1移動部68は、押圧部66によって押すダイDを変更すべく、押圧部66とキャリア保持部61とを相対的に移動させる。第1移動部68は、例えばキャリア保持部61をX軸方向とY軸方向に移動させ、押圧部66をZ軸方向に移動させる。第1移動部68は、キャリア保持部61と押圧部66の一方のみを移動させてもよい。 The joining device 60 includes a first moving unit 68. The first moving unit 68 moves the pressing unit 66 and the carrier holding unit 61 relative to one another to change the die D pressed by the pressing unit 66. The first moving unit 68, for example, moves the carrier holding unit 61 in the X-axis and Y-axis directions, and moves the pressing unit 66 in the Z-axis direction. The first moving unit 68 may move only one of the carrier holding unit 61 and the pressing unit 66.
第1移動部68は、キャリア保持部61と押圧部66のうち、キャリア保持部61のみをX軸方向とY軸方向に移動させることが好ましい。押圧部66がX軸方向とY軸方向に移動しなければ、ピックアップ部64は毎回、同じ受取位置でダイDを受け取ることができる。よって、ピックアップ部64の動作を単純化できる。 It is preferable that the first moving unit 68 moves only the carrier holding unit 61 in the X-axis and Y-axis directions out of the carrier holding unit 61 and the pressing unit 66. If the pressing unit 66 does not move in the X-axis and Y-axis directions, the pickup unit 64 can receive the die D at the same receiving position every time. This simplifies the operation of the pickup unit 64.
接合装置60は、第2移動部69を備えてもよい。第2移動部69は、基板保持部62を移動させる。第2移動部69は、ターゲット基板Wに対するダイDの接合位置を変更すべく、基板保持部62をX軸方向とY軸方向に移動させる。その結果、ピックアップ部64は、毎回、同じ受渡位置でダイDをマウント部65に渡すことができる。よって、ピックアップ部64の動作を単純化できる。第2移動部69は、基板保持部62をZ軸方向に移動させてもよい。 The bonding device 60 may also include a second moving unit 69. The second moving unit 69 moves the substrate holding unit 62. The second moving unit 69 moves the substrate holding unit 62 in the X-axis direction and the Y-axis direction to change the bonding position of the die D relative to the target substrate W. As a result, the pickup unit 64 can deliver the die D to the mount unit 65 at the same delivery position each time. This simplifies the operation of the pickup unit 64. The second moving unit 69 may also move the substrate holding unit 62 in the Z-axis direction.
接合装置60は、ターゲット基板Wに対するダイDの接合位置の精度を向上すべく、第1撮像部71と第2撮像部72と第3撮像部73の少なくとも1つを備えてもよい。なお、第1撮像部71と第2撮像部72と第3撮像部73は、ダイDとターゲット基板Wを接合する度に画像を撮像しなくてもよく、定期的に画像を撮像してもよい。 The bonding device 60 may be equipped with at least one of a first imaging unit 71, a second imaging unit 72, and a third imaging unit 73 to improve the accuracy of the bonding position of the die D relative to the target substrate W. Note that the first imaging unit 71, the second imaging unit 72, and the third imaging unit 73 do not have to capture images every time the die D and the target substrate W are bonded, and may instead capture images periodically.
第1撮像部71は、図5に示すように、第2吸着ヘッド65aで保持されているダイDの接合面Daのアライメントマークを撮像する。撮像するアライメントマークの数は、例えば2つであるが、特に限定されない。アライメントマークは、専用のマークであってもよいし、ダイDの電子回路の一部であってもよい。 As shown in FIG. 5, the first imaging unit 71 captures an image of the alignment marks on the bonding surface Da of the die D held by the second suction head 65a. The number of alignment marks to be captured is, for example, two, but is not particularly limited. The alignment marks may be dedicated marks or may be part of the electronic circuitry of the die D.
第1撮像部71は、例えば第2吸着ヘッド65aの下方に配置される。第1撮像部71は、撮像した画像を制御回路9に送信する。制御回路9は、第1撮像部71で撮像した画像を画像処理することで、第2吸着ヘッド65aに設定された第1座標系におけるダイDの位置を検出する。 The first imaging unit 71 is disposed, for example, below the second suction head 65a. The first imaging unit 71 transmits the captured image to the control circuit 9. The control circuit 9 processes the image captured by the first imaging unit 71 to detect the position of the die D in the first coordinate system set for the second suction head 65a.
第2撮像部72は、図6に示すように、基板保持部62で保持されているターゲット基板Wの接合面Waのアライメントマークを撮像する。撮像するアライメントマークの数は、例えば2つであるが、特に限定されない。アライメントマークは、専用のマークであってもよいし、ターゲット基板WのデバイスW2の電子回路の一部であってもよい。 As shown in FIG. 6, the second imaging unit 72 captures an image of the alignment marks on the bonding surface Wa of the target substrate W held by the substrate holding unit 62. The number of alignment marks to be captured is, for example, two, but is not particularly limited. The alignment marks may be dedicated marks or may be part of the electronic circuit of the device W2 on the target substrate W.
第2撮像部72は、例えば基板保持部62の上方に配置され、例えば第2吸着ヘッド65aに設けられる。第2撮像部72は、撮像した画像を制御回路9に送信する。制御回路9は、第2撮像部72で撮像した画像を画像処理することで、基板保持部62に設定された第2座標系におけるデバイスW2の位置を検出する。 The second imaging unit 72 is disposed, for example, above the board holding unit 62, and is provided, for example, on the second suction head 65a. The second imaging unit 72 transmits the captured image to the control circuit 9. The control circuit 9 processes the image captured by the second imaging unit 72 to detect the position of the device W2 in the second coordinate system set in the board holding unit 62.
制御回路9は、第1撮像部71と第2撮像部72の少なくとも1つで撮像した画像を用いて、第2吸着ヘッド65aで保持されているダイDと、基板保持部62で保持されているターゲット基板WのデバイスW2との位置合わせを行う。その位置合わせは、第2移動機構65bと第2移動部69の少なくとも1つを制御することで行う。ダイDとターゲット基板Wの接合前に、ダイD又はデバイスW2の位置を修正でき、接合位置の精度を向上できる。 The control circuit 9 uses images captured by at least one of the first imaging unit 71 and the second imaging unit 72 to align the die D held by the second suction head 65a with the device W2 on the target substrate W held by the substrate holder 62. This alignment is performed by controlling at least one of the second movement mechanism 65b and the second movement unit 69. The position of the die D or device W2 can be corrected before bonding the die D and the target substrate W, improving the accuracy of the bonding position.
第3撮像部73は、ダイDとデバイスW2の接合後に、ダイDの接合面Daのアライメントマークとターゲット基板Wの接合面Waのアライメントマークの両方を同時に撮像する。第3撮像部73は、例えばダイDを透過して、ダイDとターゲット基板Wのアライメントマークを撮像する。第3撮像部73は、例えば赤外線カメラで構成される。 After the die D and device W2 are bonded, the third imaging unit 73 simultaneously captures an image of both the alignment mark on the bonding surface Da of the die D and the alignment mark on the bonding surface Wa of the target substrate W. The third imaging unit 73 captures an image of the alignment marks of the die D and the target substrate W, for example, by transmitting light through the die D. The third imaging unit 73 is composed of, for example, an infrared camera.
第3撮像部73は、ダイDを透過してダイDとターゲット基板Wのアライメントマークを撮像する場合、例えば基板保持部62の上方に配置され、例えば第2吸着ヘッド65aに設けられる。第3撮像部73は、撮像した画像を制御回路9に送信する。制御回路9は、第3撮像部73で撮像した画像を画像処理することで、実際の接合位置と目標の接合位置のずれを検出する。 When the third imaging unit 73 is to capture an image of the alignment marks of the die D and the target substrate W through the die D, it is disposed, for example, above the substrate holding unit 62, and is provided, for example, on the second suction head 65a. The third imaging unit 73 transmits the captured image to the control circuit 9. The control circuit 9 processes the image captured by the third imaging unit 73 to detect the deviation between the actual bonding position and the target bonding position.
制御回路9は、第3撮像部73で撮像した画像を用いて、次回以降のダイDとターゲット基板Wの接合において、第2吸着ヘッド65aで保持されているダイDと、基板保持部62で保持されているターゲット基板Wの位置合わせを行う。接合装置60の習性などを考慮してダイD又はターゲット基板Wの位置を修正でき、接合位置の精度を向上できる。 The control circuit 9 uses the image captured by the third imaging unit 73 to align the die D held by the second suction head 65a with the target substrate W held by the substrate holder 62 when bonding the die D and target substrate W from the next time onwards. The position of the die D or target substrate W can be corrected taking into account the characteristics of the bonding device 60, improving the accuracy of the bonding position.
次に、図7を参照して一実施形態に係る押圧部66について説明する前に、図9を参照して参考形態に係る押圧部66について説明する。押圧部66が樹脂膜E2を押すと、押した場所を中心にキャリア基板E1が図9(A)に破線で示すように緩やかに変形しうる。その緩やかな変形を抑制すべく、吸着部67が設けられる。 Next, before describing the pressing unit 66 according to one embodiment with reference to Figure 7, the pressing unit 66 according to a reference embodiment will be described with reference to Figure 9. When the pressing unit 66 presses the resin film E2, the carrier substrate E1 may deform gently around the pressed location, as shown by the dashed line in Figure 9(A). To suppress this gentle deformation, an adsorption unit 67 is provided.
吸着部67は、押圧部66の周囲においてキャリア基板E1を吸着する。吸着部67が押圧部66の周囲においてキャリア基板E1の変形を抑制した状態で、押圧部66が樹脂膜E2を変形させる。複数のダイDのうち、一のダイDの近傍のみにおいて、樹脂膜E2を変形でき、樹脂膜E2とダイDの間にくさび状の隙間を形成できる。 The suction portion 67 suctions the carrier substrate E1 around the pressing portion 66. While the suction portion 67 suppresses deformation of the carrier substrate E1 around the pressing portion 66, the pressing portion 66 deforms the resin film E2. The resin film E2 can be deformed only in the vicinity of one of the multiple dies D, forming a wedge-shaped gap between the resin film E2 and the die D.
吸着部67がキャリア基板E1の緩やかな変形を抑制することは、押圧部66がガスの圧力で樹脂膜E2を押す場合に特に有効である。図9(A)に破線で示すようにキャリア基板E1の緩やかな変形が生じると、キャリア基板E1と押圧部66との間に形成されるガス供給室からガスが漏れてしまうからである。 The suction portion 67 suppressing gradual deformation of the carrier substrate E1 is particularly effective when the pressing portion 66 presses the resin film E2 with gas pressure. This is because if gradual deformation of the carrier substrate E1 occurs, as shown by the dashed line in Figure 9(A), gas will leak from the gas supply chamber formed between the carrier substrate E1 and the pressing portion 66.
押圧部66は、例えば押圧ヘッド66aを有する。押圧ヘッド66aは、キャリア基板E1との間にガス供給室を形成する。ガス供給室は、第1貫通孔E3に連通する。押圧部66は、環状のシール部材66bを有する。シール部材66bは、キャリア基板E1に接し、ガス供給室を密閉する。ガス供給室にガスを供給することで、ガスの圧力でダイDを押すことができる。 The pressing unit 66 has, for example, a pressing head 66a. The pressing head 66a forms a gas supply chamber between itself and the carrier substrate E1. The gas supply chamber communicates with the first through-hole E3. The pressing unit 66 has an annular sealing member 66b. The sealing member 66b contacts the carrier substrate E1 and seals the gas supply chamber. By supplying gas to the gas supply chamber, the die D can be pressed by the gas pressure.
吸着部67は、例えば吸着ヘッド67aを有する。吸着ヘッド67aは、キャリア基板E1との間にガス吸引室を形成する。ガス吸引室は、ガス供給室を取り囲むように環状に形成される。吸着部67は、環状のシール部材67bを有する。シール部材67bは、キャリア基板E1に接し、ガス吸引室を密閉する。ガス吸引室に大気圧よりも低い圧力(負圧)を生じさせることで、差圧によってキャリア基板E1を真空吸着できる。 The suction unit 67 has, for example, a suction head 67a. The suction head 67a forms a gas suction chamber between itself and the carrier substrate E1. The gas suction chamber is formed in a ring shape to surround the gas supply chamber. The suction unit 67 has a ring-shaped sealing member 67b. The sealing member 67b contacts the carrier substrate E1 and seals the gas suction chamber. By generating a pressure (negative pressure) lower than atmospheric pressure in the gas suction chamber, the carrier substrate E1 can be vacuum-sucked by the pressure difference.
押圧部66と吸着部67がキャリア基板E1に接することができるように、キャリア保持部61は環状に形成され、キャリア基板E1の下面の周縁部を吸着する。押圧部66と吸着部67は、環状のキャリア保持部61の内側に配置され、キャリア基板E1の下面の中央部に接する。 The carrier holding portion 61 is formed in an annular shape so that the pressing portion 66 and suction portion 67 can contact the carrier substrate E1, and adsorbs the peripheral edge of the underside of the carrier substrate E1. The pressing portion 66 and suction portion 67 are positioned inside the annular carrier holding portion 61, and contact the center of the underside of the carrier substrate E1.
押圧部66と吸着部67は、押圧部66によって押すダイDを変更すべく、キャリア保持部61に対して相対的に移動させられる。第1移動部68は、上記の通り、キャリア保持部61と押圧部66のうち、キャリア保持部61のみをX軸方向とY軸方向に移動させることが好ましい。 The pressing unit 66 and the suction unit 67 are moved relative to the carrier holding unit 61 to change the die D pressed by the pressing unit 66. As described above, it is preferable that the first moving unit 68 moves only the carrier holding unit 61 of the carrier holding unit 61 and the pressing unit 66 in the X-axis and Y-axis directions.
参考形態には、下記(A1)~(A2)の課題がある。(A1)押圧部66と吸着部67が環状のキャリア保持部61の内側に配置されるので、キャリア保持部61のX軸方向およびY軸方向における可動範囲が限られてしまう。なお、キャリア保持部61の代わりに、押圧部66と吸着部67をX軸方向とY軸方向に移動させる場合も、可動範囲が限られてしまう。その結果、図9(B)に示すように、押圧部66で押すことできるダイDの位置が限られてしまう。従って、キャリアEに搭載可能なダイDの数が少なくなってしまう。 The reference embodiment has the following problems (A1) and (A2). (A1) Because the pressing portion 66 and the suction portion 67 are arranged inside the annular carrier holding portion 61, the range of movement of the carrier holding portion 61 in the X-axis and Y-axis directions is limited. Furthermore, even if the pressing portion 66 and the suction portion 67 are moved in the X-axis and Y-axis directions instead of the carrier holding portion 61, the range of movement is also limited. As a result, as shown in Figure 9 (B), the position of the die D that can be pressed by the pressing portion 66 is limited. Therefore, the number of dies D that can be mounted on the carrier E is reduced.
(A2)第1移動部68が押圧部66によって押すダイDを変更すべく、押圧部66とキャリア保持部61とを相対的に移動させることで、押圧部66と吸着部67がキャリアEに繰り返し接触する。その結果、シール部材66b、67bが劣化してパーティクルが生じ、キャリアEが汚れてしまうことがある。キャリアEの汚れは、ダイDに転写しうる。なお、押圧部66がピンでダイDを押す場合、押圧部66がキャリアEに接触しないことがある。但し、吸着部67はキャリアEに接触するので、キャリアEが汚れてしまうことに変わりはない。 (A2) In order to change the die D pressed by the pressing unit 66, the first moving unit 68 moves the pressing unit 66 and the carrier holding unit 61 relatively, causing the pressing unit 66 and the suction unit 67 to repeatedly come into contact with the carrier E. As a result, the sealing members 66b, 67b may deteriorate, generating particles and contaminating the carrier E. The contamination on the carrier E may be transferred to the die D. Note that when the pressing unit 66 presses the die D with a pin, the pressing unit 66 may not come into contact with the carrier E. However, because the suction unit 67 comes into contact with the carrier E, the carrier E will still become contaminated.
参考形態には、上記(A1)~(A2)に加えて、下記(A3)の課題がある。(A3)シール部材66b、67bとキャリアEとの平行度の精度が低い場合、ガス漏れが生じないようにシール部材66b、67bをキャリアEに強く押し付けると、キャリアEが撓んでしまい、キャリアEが破損してしまうことがある。従って、平行度の要求精度が高く、平行度の調整作業が面倒である。 In addition to the above (A1) and (A2), the reference embodiment has the following problem (A3). (A3) If the parallelism between the sealing members 66b, 67b and the carrier E is low, pressing the sealing members 66b, 67b hard against the carrier E to prevent gas leakage can cause the carrier E to bend and be damaged. Therefore, the required parallelism accuracy is high, and the work of adjusting the parallelism is tedious.
本実施形態は、上記(A1)~(A3)の課題を解決すべく、図7(A)に示すように下記(B1)~(B2)の構成を有する。(B1)キャリア保持部61は、キャリアEが当接する第1面61aと、第1面61aとは反対向きの第2面61bと、第1面61aと第2面61bの間を貫通する複数の第2貫通孔61cを有する。(B2)押圧部66は、第2貫通孔61cを経由して第1貫通孔E3にガスを供給するガス供給機構66cを有する。なお、図8に示すように、押圧部66は、第2貫通孔61cを経由して第1貫通孔E3にピン66dを差し込むピン駆動機構66eを有してもよい。 In order to solve the above problems (A1) to (A3), this embodiment has the following configurations (B1) to (B2) as shown in FIG. 7(A). (B1) The carrier holding portion 61 has a first surface 61a against which the carrier E abuts, a second surface 61b facing opposite the first surface 61a, and a plurality of second through holes 61c that penetrate between the first surface 61a and the second surface 61b. (B2) The pressing portion 66 has a gas supply mechanism 66c that supplies gas to the first through hole E3 via the second through hole 61c. Note that, as shown in FIG. 8, the pressing portion 66 may also have a pin drive mechanism 66e that inserts a pin 66d into the first through hole E3 via the second through hole 61c.
本実施形態によれば、押圧部66がキャリア保持部61を基準としてキャリアEとは反対側に配置される。例えば、キャリア保持部61の第1面61aが上面であって第2面61bが例えば下面である場合、キャリア保持部61の下面の下方に押圧部66が設けられる。従って、第1移動部68が押圧部66によって押すダイDを変更すべく、押圧部66とキャリア保持部61とを相対的にX軸方向とY軸方向に移動させる際に、押圧部66とキャリア保持部61の干渉が生じず、可動範囲が広い。その結果、図7(B)に示すように、キャリアEに搭載可能なダイDの数を増加することができる。よって、キャリアEの交換頻度を低減でき、スループットを向上できる。 According to this embodiment, the pressing unit 66 is positioned on the opposite side of the carrier E from the carrier holding unit 61. For example, if the first surface 61a of the carrier holding unit 61 is the upper surface and the second surface 61b is, for example, the lower surface, the pressing unit 66 is provided below the lower surface of the carrier holding unit 61. Therefore, when the first moving unit 68 moves the pressing unit 66 and the carrier holding unit 61 relatively in the X-axis and Y-axis directions to change the die D pressed by the pressing unit 66, no interference occurs between the pressing unit 66 and the carrier holding unit 61, and the range of movement is wide. As a result, as shown in FIG. 7(B), the number of dies D that can be mounted on the carrier E can be increased. This reduces the frequency of carrier E replacement and improves throughput.
本実施形態によれば、参考形態の吸着部67の代わりに、キャリア保持部61が押圧部66の周囲においてキャリア基板E1の変形を抑制した状態で、押圧部66が樹脂膜E2を変形させる。それゆえ、吸着部67が不要であり、その分、メンテナンスが容易である。キャリア保持部61は、図7(A)に示すように、第1面61aにキャリア基板E1を真空吸着する吸着溝61dを有する。第1面61aの直径は、キャリア基板E1の全体の変形を抑制すべく、キャリア基板E1の直径以上であることが好ましい。吸着溝61dは、樹脂膜E2を局所的に変形させるべく、隣り合う第2貫通孔61cの間に設けられることが好ましい。吸着溝61dは、例えば格子状に形成される。 In this embodiment, instead of the suction portion 67 of the reference embodiment, the carrier holding portion 61 suppresses deformation of the carrier substrate E1 around the pressing portion 66, while the pressing portion 66 deforms the resin film E2. Therefore, the suction portion 67 is not required, which makes maintenance easier. As shown in FIG. 7(A), the carrier holding portion 61 has suction grooves 61d on the first surface 61a that vacuum-suck the carrier substrate E1. The diameter of the first surface 61a is preferably equal to or greater than the diameter of the carrier substrate E1 to suppress overall deformation of the carrier substrate E1. The suction grooves 61d are preferably provided between adjacent second through holes 61c to locally deform the resin film E2. The suction grooves 61d are formed, for example, in a grid pattern.
本実施形態によれば、第1移動部68が押圧部66によって押すダイDを変更すべく、押圧部66とキャリア保持部61とを相対的に移動させることで、押圧部66がキャリアEではなくキャリア保持部61に繰り返し接触する。その結果、シール部材66bが劣化してパーティクルが生じ、キャリア保持部61の第2面61bが汚れてしまったとしても、キャリア保持部61の第1面61aはほとんど汚れない。従って、キャリアEの汚れを抑制できる。 In this embodiment, the first moving unit 68 moves the pressing unit 66 and the carrier holding unit 61 relative to one another to change the die D pressed by the pressing unit 66, so that the pressing unit 66 repeatedly comes into contact with the carrier holding unit 61 rather than the carrier E. As a result, even if the sealing member 66b deteriorates, particles are generated, and the second surface 61b of the carrier holding unit 61 becomes contaminated, the first surface 61a of the carrier holding unit 61 remains almost uncontaminated. Therefore, contamination of the carrier E can be suppressed.
本実施形態によれば、シール部材66bは、キャリアEではなくキャリア保持部61に接触する。シール部材66bとキャリア保持部61との平行度の精度が低い場合、ガス漏れが生じないようにシール部材66bをキャリア保持部61に強く押し付けても、キャリア保持部61はキャリアEに比べて高い剛性を有するので、キャリア保持部61が破損してしまうことはない。従って、平行度の要求精度が低く、平行度の調整作業が簡単である。 In this embodiment, the sealing member 66b contacts the carrier holding portion 61 rather than the carrier E. If the parallelism between the sealing member 66b and the carrier holding portion 61 is not precise, even if the sealing member 66b is pressed hard against the carrier holding portion 61 to prevent gas leakage, the carrier holding portion 61 will not be damaged because it has higher rigidity than the carrier E. Therefore, the required parallelism precision is low, and the parallelism adjustment work is simple.
なお、図8に示すように押圧部66がピン66dでダイDを押す場合、押圧部66がシール部材66bを有しなくてもよい。図7(A)に示すように押圧部66がガス供給機構66cを有する場合に、押圧部66がシール部材66bを有すればよい。押圧部66がピン駆動機構66eを有する場合に、押圧部66がシール部材66bを有しなくてよい。 Note that, as shown in Figure 8, when the pressing unit 66 presses the die D with a pin 66d, the pressing unit 66 does not need to have a sealing member 66b. When the pressing unit 66 has a gas supply mechanism 66c as shown in Figure 7(A), the pressing unit 66 may have a sealing member 66b. When the pressing unit 66 has a pin drive mechanism 66e, the pressing unit 66 does not need to have a sealing member 66b.
ガス供給機構66cは、第2貫通孔61cを経由して第1貫通孔E3にガスを供給する。ガス供給機構66cは、ガスの流路を形成する供給ラインを有する。ガス供給機構66cは、供給ラインの途中に例えば開閉バルブと圧力制御器を有する。開閉バルブは、ガスの流路を開閉する。圧力制御器は、ガスの圧力を制御する。ガス供給機構66cは、供給ラインの途中にリークバルブを有してもよい。リークバルブは、ガスを排出する。 The gas supply mechanism 66c supplies gas to the first through-hole E3 via the second through-hole 61c. The gas supply mechanism 66c has a supply line that forms a gas flow path. The gas supply mechanism 66c has, for example, an opening/closing valve and a pressure controller along the supply line. The opening/closing valve opens and closes the gas flow path. The pressure controller controls the gas pressure. The gas supply mechanism 66c may also have a leak valve along the supply line. The leak valve exhausts the gas.
キャリア保持部61とキャリアEとの境界において、第1貫通孔E3と第2貫通孔61cが1対1でつながることが好ましい。なお、第2貫通孔61cの数は、第1貫通孔E3の数以上であればよく、第1貫通孔E3の数よりも多くてもよい。第1貫通孔E3のある場所に第2貫通孔61cがあればよく、第1貫通孔E3と第2貫通孔61cが1対1でつながっていなくてもよい。 It is preferable that the first through holes E3 and the second through holes 61c are connected one-to-one at the boundary between the carrier holding portion 61 and the carrier E. The number of second through holes 61c only needs to be equal to or greater than the number of first through holes E3, and may even be greater than the number of first through holes E3. It is sufficient that the second through holes 61c are located at the locations where the first through holes E3 are present, and the first through holes E3 and the second through holes 61c do not need to be connected one-to-one.
図7(A)に示すように押圧部66がガス供給機構66cを有する場合、キャリア保持部61とキャリアEとの境界において、第2貫通孔61cの開口は第1貫通孔E3の開口よりも小さく第1貫通孔E3の開口の内側に配置されることが好ましい。この場合、ガスの圧力がキャリア基板E1の下面にほぼ作用しないので、キャリア基板E1が撓むのを抑制できる。 As shown in Figure 7(A), when the pressing unit 66 has a gas supply mechanism 66c, it is preferable that the opening of the second through hole 61c at the boundary between the carrier holding unit 61 and the carrier E is smaller than the opening of the first through hole E3 and is positioned inside the opening of the first through hole E3. In this case, gas pressure hardly acts on the underside of the carrier substrate E1, so bending of the carrier substrate E1 can be suppressed.
押圧部66は、一のダイDを押すのに、複数の第2貫通孔61cと複数の第1貫通孔E3を使用してもよい。例えば、押圧部66は、一のダイDを押すのに、図7(A)に示すように複数の第2貫通孔61cを経由して複数の第1貫通孔E3にガスを供給するか、あるいは図8にしめすようにピン66dを挿し込んでよい。一のダイDを複数点で押すことができる。複数点を複数のグループに分けて順番に押すことも可能である。 The pressing unit 66 may use multiple second through holes 61c and multiple first through holes E3 to press one die D. For example, to press one die D, the pressing unit 66 may supply gas to multiple first through holes E3 via multiple second through holes 61c as shown in FIG. 7(A), or may insert a pin 66d as shown in FIG. 8. One die D can be pressed at multiple points. It is also possible to divide the multiple points into multiple groups and press them in sequence.
図8に示すピン駆動機構66eは、ピン66dを駆動するアクチュエータを有する。第1移動部68が押圧部66によって押すダイDを変更すべく、押圧部66とキャリア保持部61とを相対的にX軸方向とY軸方向に移動させる前に、ピン66dは第1貫通孔E3および第2貫通孔61cから退出させられる。その後、ピン66dは、第2貫通孔61cを経由して第1貫通孔E3に差し込まれ、ダイDを押す。 The pin drive mechanism 66e shown in Figure 8 has an actuator that drives the pin 66d. Before the first moving unit 68 moves the pressing unit 66 and the carrier holding unit 61 relatively in the X-axis and Y-axis directions to change the die D pressed by the pressing unit 66, the pin 66d is withdrawn from the first through hole E3 and the second through hole 61c. The pin 66d is then inserted into the first through hole E3 via the second through hole 61c and presses the die D.
以上、本開示に係る接合装置、及び接合方法の実施形態等について説明したが、本開示は上記実施形態等に限定されない。特許請求の範囲に記載された範疇内において、各種の変更、修正、置換、付加、削除、及び組み合わせが可能である。それらについても当然に本開示の技術的範囲に属する。 The foregoing describes embodiments of the joining device and joining method according to the present disclosure, but the present disclosure is not limited to the above embodiments. Various changes, modifications, substitutions, additions, deletions, and combinations are possible within the scope of the claims. Naturally, these also fall within the technical scope of the present disclosure.
本出願は、2024年5月13日に日本国特許庁に出願した特願2024-078159号に基づく優先権を主張するものであり、特願2024-078159号の全内容を本出願に援用する。 This application claims priority based on Patent Application No. 2024-078159, filed with the Japan Patent Office on May 13, 2024, and the entire contents of Patent Application No. 2024-078159 are incorporated herein by reference.
60 接合装置
61 キャリア保持部
61a 第1面
61b 第2面
61c 第2貫通孔
62 基板保持部
66 押圧部
66c ガス供給機構
66d ピン
66e ピン駆動機構
68 第1移動部
W ターゲット基板
D ダイ
E キャリア
E1 キャリア基板
E2 樹脂膜
E3 第1貫通孔
60 Bonding device 61 Carrier holding part 61a First surface 61b Second surface 61c Second through-hole 62 Substrate holding part 66 Pressing part 66c Gas supply mechanism 66d Pin 66e Pin driving mechanism 68 First moving part W Target substrate D Die E Carrier E1 Carrier substrate E2 Resin film E3 First through-hole
Claims (9)
前記キャリアは、キャリア基板と、前記キャリア基板を厚さ方向に貫通する複数の第1貫通孔と、前記キャリア基板に設けられる樹脂膜と、を有し、前記樹脂膜の上に複数の前記ダイを装着し、
前記接合装置は、前記キャリアを保持するキャリア保持部と、前記第1貫通孔にガスを供給すること又は前記第1貫通孔にピンを差し込むことで前記ダイを押す押圧部と、前記押圧部が押す前記ダイを変更すべく前記押圧部と前記キャリア保持部とを相対的に移動させる第1移動部と、を備え、
前記キャリア保持部は、前記キャリアが当接する第1面と、前記第1面とは反対向きの第2面と、前記第1面と前記第2面の間を貫通する複数の第2貫通孔を有し、
前記押圧部は、前記第2貫通孔を経由して前記第1貫通孔にガスを供給するガス供給機構、又は前記第2貫通孔を経由して前記第1貫通孔にピンを差し込むピン駆動機構を有する、接合装置。 1. A bonding apparatus for separating a plurality of dies from a carrier and bonding the dies to a target substrate, comprising:
the carrier has a carrier substrate, a plurality of first through holes penetrating the carrier substrate in a thickness direction, and a resin film provided on the carrier substrate, and the plurality of dies are mounted on the resin film;
the bonding apparatus includes a carrier holding unit that holds the carrier, a pressing unit that presses the die by supplying gas to the first through hole or by inserting a pin into the first through hole, and a first moving unit that relatively moves the pressing unit and the carrier holding unit to change the die pressed by the pressing unit,
the carrier holding portion has a first surface against which the carrier abuts, a second surface facing opposite to the first surface, and a plurality of second through holes penetrating between the first surface and the second surface;
The pressing unit has a gas supply mechanism that supplies gas to the first through hole via the second through hole, or a pin drive mechanism that inserts a pin into the first through hole via the second through hole.
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| JP2024078159 | 2024-05-13 | ||
| JP2024-078159 | 2024-05-13 |
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| JP2009206134A (en) * | 2008-02-26 | 2009-09-10 | Panasonic Corp | Pickup method for chip |
| JP2009277912A (en) * | 2008-05-15 | 2009-11-26 | Fujitsu Microelectronics Ltd | Peeling method and peeling device |
| JP2011216529A (en) * | 2010-03-31 | 2011-10-27 | Furukawa Electric Co Ltd:The | Method for manufacturing semiconductor device |
| JP2023184466A (en) * | 2022-06-17 | 2023-12-28 | 東京エレクトロン株式会社 | Substrate processing method and substrate processing apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009206134A (en) * | 2008-02-26 | 2009-09-10 | Panasonic Corp | Pickup method for chip |
| JP2009277912A (en) * | 2008-05-15 | 2009-11-26 | Fujitsu Microelectronics Ltd | Peeling method and peeling device |
| JP2011216529A (en) * | 2010-03-31 | 2011-10-27 | Furukawa Electric Co Ltd:The | Method for manufacturing semiconductor device |
| JP2023184466A (en) * | 2022-06-17 | 2023-12-28 | 東京エレクトロン株式会社 | Substrate processing method and substrate processing apparatus |
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