TW202601818A - Joining device and joining method - Google Patents

Abstract

This invention provides a technique to increase the number of bare dies that can be mounted on a carrier while suppressing carrier contamination. The carrier of this invention includes: a carrier substrate, a plurality of first through-holes penetrating the carrier substrate in the thickness direction, and a resin film disposed on the carrier substrate; the plurality of bare dies are mounted on the resin film. The bonding device includes: a carrier holding portion, a pushing portion, and a first moving portion. The carrier holding portion includes: a first surface abutting the carrier, a second surface facing the opposite direction to the first surface, and a plurality of second through-holes penetrating between the first surface and the second surface. The pushing portion includes a gas supply mechanism for supplying gas to the first through-holes through the second through-holes, or a pin driving mechanism for inserting a pin into the first through-hole through the second through-holes.

Description

Connection device and connection method

This invention relates to a joining device and a joining method.

The chip mounting system described in Patent 1 includes: a chip feeding device, a bonding device, a surface treatment device, a transfer unit, and a transport unit (paragraph [0225] of Patent 1). The chip feeding device supplies a plurality of chips individually. The chips are adhered to adhesive tape covering the opening of a frame and are pushed upwards and flipped up and down one by one (paragraph [0251] of Patent 1). The bonding device mounts the chips supplied from the chip feeding device onto a substrate. [Prior Art Documents] [Patent Documents]

[Patent Document 1] Patent No. 6337400

[Problem Solved by the Invention] One embodiment of the present invention provides a technique that can increase the number of bare dies that can be mounted on a carrier while suppressing carrier contamination. [Technical Means for Solving the Problem]

According to one embodiment of the present invention, a bonding device separates a plurality of bare dies from a carrier and bonds them to a target substrate. The carrier includes: a carrier substrate, a plurality of first through-holes penetrating the carrier substrate in the thickness direction, and a resin film disposed on the carrier substrate; the plurality of bare dies are mounted on the resin film. The bonding device includes: a carrier holding portion for holding the carrier, a pushing portion for pushing the bare dies by supplying gas to the first through-holes or inserting a pin into the first through-holes, and a first moving portion for moving the pushing portion relative to the carrier holding portion to change the bare dies pushed by the pushing portion. The carrier holding portion includes: a first surface abutting the carrier, a second surface facing the opposite direction to the first surface, and a plurality of second through-holes penetrating between the first surface and the second surface. The pushing part includes a gas supply mechanism that supplies gas to the first through-hole through the second through-hole, or a pin driving mechanism that inserts a pin into the first through-hole through the second through-hole. [Invention Effects]

According to one embodiment of the present invention, the number of bare crystals that can be mounted on a vehicle can be increased, while suppressing contamination of the vehicle.

The embodiments of the present invention will now be described with reference to the figures. Sometimes, the same or similar structural elements are assigned the same symbol in different figures, and their descriptions are omitted. In this specification, the X-axis, Y-axis, and Z-axis are mutually perpendicular directions. The X-axis and Y-axis are horizontal directions, and the Z-axis is a vertical direction. The X-axis includes the positive X-axis and the negative X-axis, which is opposite to the positive X-axis. The Y-axis includes the positive Y-axis and the negative Y-axis, which is opposite to the positive Y-axis. The Z-axis includes the positive Z-axis and the negative Z-axis, which is opposite to the positive Z-axis.

Referring to FIG1, a bonding system 1 according to one embodiment is described. The bonding system 1 separates a plurality of bare dies from a carrier and bonds them to a target substrate W. As shown in FIG2(A), the target substrate W includes a semiconductor substrate W1 such as a silicon wafer, and a plurality of elements W2 formed on the semiconductor substrate W1. The plurality of elements W2 are separated by a plurality of mutually orthogonal dicings. Each element W2 includes electronic circuitry. As shown in FIG2(B), a bare die D is electrically connected to each element W2. Subsequently, the target substrate W is cut along the dicings to individually wafer each element W2, thereby obtaining a semiconductor device. The semiconductor device includes elements W2 and a bare die D.

A bare die D is a semiconductor substrate on which a plurality of components distinct from component W2 are formed, obtained by individualizing each component. The electronic circuits of the components in the bare die D are electrically connected to the electronic circuits of component W2 on the target substrate W. Furthermore, the type and number of bare dies D electrically connected to a component W2 are not particularly limited. Although not illustrated, a plurality of bare dies D can also be electrically connected to a component W2.

As shown in Figure 3, the carrier E holds a plurality of bare crystals D. The carrier E holds each bare crystal D with its bonding surface Da facing upward. This allows for the activation and hydrophilization of the bonding surface Da of each bare crystal D. The carrier E includes a carrier substrate E1 and a resin film E2 disposed on the carrier substrate E1 facing the bare crystal D.

The carrier E holds a plurality of bare crystals D on the resin film E2. The carrier E uses electrostatic adsorption to hold the bare crystals D. Furthermore, by pressing the bare crystals D against the resin film E2, the resin film E2 can be deformed to expel gas between the bare crystals D and the resin film E2, or the bare crystals D can be vacuum adsorbed onto the resin film E2.

The carrier substrate E1 may be conductive or insulating. A first through-hole E3 is formed in the carrier substrate E1, penetrating the carrier substrate E1 in the thickness direction. The bare die D can be peeled from the carrier E by supplying gas to the first through-hole E3 or by inserting a pin (not shown) into the first through-hole E3. The number and arrangement of the first through-hole E3 are not particularly limited. It is sufficient that at least one first through-hole E3 is formed for each bare die D.

Resin film E2 is a flexible material, specifically preferably composed of a material with an elastic coefficient below 2 GPa, more preferably below 0.5 GPa. From the viewpoint of durability during modification of the bonding surface Da of bare crystal D, resin film E2 is preferably composed of, for example, polyimide or EVA (ethylene-vinyl acetate copolymer). The thickness of resin film E2 is, for example, 10 μm. Furthermore, resin film E2 is a single layer in this embodiment, but it may also be multiple layers. For example, resin film E2 may also include a polyolefin layer and an acrylic adhesive layer.

As shown in Figure 1, the assembly system 1 includes: an inlet/outlet station 2, a first processing station 3, a second processing station 5, and a control circuit 9. The inlet/outlet station 2, the first processing station 3, and the second processing station 5 are arranged in sequence from the negative X-axis side to the positive X-axis side. Furthermore, although not shown, multiple second processing stations 5 can be provided, and these multiple second processing stations 5 can also be arranged in a row from the negative X-axis side to the positive X-axis side.

The loading/unloading station 2 includes a loading stage 20. Wafer cassettes C1 to C4 are placed on the loading stage 20. Wafer cassette C1 holds the target substrate W before bonding the bare die D. Wafer cassette C2 holds the target substrate W after bonding the bare die D. Wafer cassette C3 holds the carrier E before separating the bare die D. Wafer cassette C4 holds the carrier E after separating the bare die D.

The loading/unloading station 2 includes a first transport area 21 and a first transport device 22. The first transport area 21 is adjacent to the platform 20. The first transport area 21 extends in the Y-axis direction. The first transport device 22 includes a transport arm. The transport arm holds and transports the target substrate W and the carrier E in the first transport area 21. The number of transport arms can be one or multiple. Alternatively, a transport arm for the target substrate W and a transport arm for the carrier E can be separately provided. The first transport device 22 includes a drive unit (not shown) for moving or rotating the transport arm. The transport arm can move in the horizontal direction (both the X-axis and Y-axis directions) and the vertical direction (Z-axis direction), and rotate about the vertical axis.

The first processing station 3 includes a first storage device 30. The first storage device 30 is adjacent to the first transport area 21. The first storage device 30 is configured on the opposite side of the loading platform 20 with reference to the first transport area 21. The first storage device 30 temporarily stores the target substrate W and the carrier E. The first storage device 30 includes a plurality of platforms arranged vertically. Each platform holds the target substrate W and the carrier E. Alternatively, separate platforms may be provided for the target substrate W and the carrier E.

The first processing station 3 includes a second transport area 31 and a second transport device 32. The second transport area 31 is adjacent to the first storage device 30 and extends from the first storage device 30 in the positive X-axis direction. The second transport device 32 includes a transport arm. The transport arm holds and transports the target substrate W and the carrier E in the second transport area 31. The number of transport arms can be one or more. Alternatively, a transport arm for the target substrate W and a transport arm for the carrier E can be separately provided. The second transport device 32 includes a drive unit (not shown) for moving or rotating the transport arm. The transport arm can move in the horizontal direction (both X-axis and Y-axis directions) and the vertical direction (Z-axis direction), and rotate about the vertical axis.

The first processing station 3 includes: a first activation device 33, a first hydrophilization device 34, a second activation device 35, and a second hydrophilization device 36. The first activation device 33, the first hydrophilization device 34, the second activation device 35, and the second hydrophilization device 36 are adjacent to the second transport area 31 and are located on the positive Y-axis side or the negative Y-axis side of the second transport area 31.

The first activation device 33 activates the bonding surface Da of the bare die D while the carrier E is equipped with the bare die D. The first activation device 33 is, for example, a plasma treatment device. In the first activation device 33, oxygen, which serves as the treatment gas, is excited under reduced pressure to plasma and ionize. The bonding surface Da is activated by irradiating it with oxygen ions. The treatment gas is not limited to oxygen; for example, nitrogen may also be used.

The first hydrophilization device 34 hydrophilizes the bonding surface Da of the bare die D while it is mounted on the carrier E. For example, the first hydrophilization device 34 supplies pure water (e.g., deionized water) to the bonding surface Da while rotating the carrier E held by the rotary chuck. The pure water imparts OH groups to the pre-activated bonding surface Da. The bare die D can be bonded to the target substrate W by utilizing the hydrogen bonds between the OH groups.

The second activation device 35 activates the bonding surface Wa of the target substrate W. The second activation device 35 is, for example, a plasma treatment device. In the second activation device 35, oxygen, used as a treatment gas, is excited under reduced pressure to plasma and ionize. The bonding surface Wa is activated by irradiating it with oxygen ions. The treatment gas is not limited to oxygen; for example, nitrogen may also be used.

The second hydrophilization device 36 hydrophilizes the bonding surface Wa of the target substrate W. For example, the second hydrophilization device 36 supplies pure water (e.g., deionized water) to the bonding surface Wa while rotating the target substrate W held by the rotary chuck. The pure water imparts OH groups to the pre-activated bonding surface Wa. The bare die D can be bonded to the target substrate W using the hydrogen bonds between the OH groups.

The second processing station 5 includes a second storage device 50. The second storage device 50 is adjacent to the second transport area 31. The second storage device 50 is configured on the opposite side of the first storage device 30, with the second transport area 31 as a reference. The second storage device 50 temporarily stores the target substrate W and the carrier E. The second storage device 50 includes a plurality of platforms arranged vertically. Each platform is for holding at least one of the target substrate W and the carrier E. Alternatively, a platform for the target substrate W and a platform for the carrier E can be provided separately.

The second processing station 5 includes a third transport area 51 and a third transport device 52. The third transport area 51 is adjacent to the second storage device 50 and extends from the second storage device 50 in the positive X-axis direction. The third transport device 52 includes a transport arm. The transport arm holds and transports the target substrate W and the carrier E in the third transport area 51. The number of transport arms can be one or more. Alternatively, a transport arm for the target substrate W and a transport arm for the carrier E can be separately provided. The third transport device 52 includes a drive unit (not shown) for moving or rotating the transport arm. The transport arm can move in the horizontal direction (both X-axis and Y-axis directions) and the vertical direction (Z-axis direction), and rotate about the vertical axis.

The second processing station 5 includes a bonding device 60. The bonding device 60 is adjacent to the third transport area 51 and is located on either the positive or negative Y-axis side of the third transport area 51. The bonding device 60 separates the bare die D from the carrier E and bonds the bare die D to the target substrate W by aligning the bonding surface Da of the separated bare die D with the bonding surface Wa of the target substrate W. Details of the bonding device 60 will be described later.

The control circuit 9 is, for example, a computer. The control circuit 9 includes, for example, an arithmetic unit 91 such as a CPU (Central Processing Unit) and a storage unit 92 such as memory. The storage unit 92 stores various processing programs that control the operation of the connection system 1. The control circuit 9 controls the operation of the connection system 1 by causing the arithmetic unit 91 to execute the programs stored in the storage unit 92. Alternatively, a lower-level control circuit can be provided for each device constituting the connection system 1 to control the operation of that device, and a higher-level control circuit can be provided to integrate and control multiple lower-level control circuits. The control circuit 9 can also be composed of multiple lower-level control circuits and a higher-level control circuit.

The control circuit 9 includes electronic circuits such as a CPU, FPGA (Field Programmable Gate Array), or ASIC (Application Specific Integrated Circuit), and performs various control actions described in this specification by executing command codes stored in memory or by designing circuits for specific purposes.

Next, a bonding method according to one embodiment will be described with reference to FIG. 4. The process in FIG. 4 is performed under the control of the control circuit 9. First, the first transport device 22 removes the carrier E from the wafer cassette C3 and transports it to the first storage device 30. Then, the second transport device 32 removes the carrier E from the first storage device 30 and transports it to the first activation device 33.

Next, the first activation device 33 activates the bonding surface Da of the bare die D while the carrier E is equipped with the bare die D (step S101). Afterwards, the second transport device 32 removes the carrier E from the first activation device 33 and transports it to the first hydrophilization device 34.

Next, the first hydrophilization device 34 hydrophilizes the bonding surface Da of the bare die D while the carrier E is equipped with the bare die D (step S102). Afterwards, the second transport device 32 removes the carrier E from the first hydrophilization device 34 and transports it to the second storage device 50. Then, the third transport device 52 removes the carrier E from the second storage device 50 and transports it to the bonding device 60.

The following steps S103 to S104 are performed in parallel with the above steps S101 to S102. First, the first transport device 22 removes the target substrate W from the wafer cassette C1 and transports it to the first storage device 30. Then, the second transport device 32 removes the target substrate W from the first storage device 30 and transports it to the second activation device 35.

Next, the second activation device 35 activates the bonding surface Wa of the target substrate W (step S103). Subsequently, the second transport device 32 removes the target substrate W from the second activation device 35 and transports it to the second hydrophilization device 36.

Next, the second hydrophilization device 36 hydrophilizes the bonding surface Wa of the target substrate W (step S104). Afterwards, the second transport device 32 removes the target substrate W from the second hydrophilization device 36 and transports it to the second storage device 50. Then, the third transport device 52 removes the target substrate W from the second storage device 50 and transports it to the bonding device 60.

Next, the bonding device 60 separates the bare die D from the carrier E and aligns the bonding surface Da of the separated bare die D with the bonding surface Wa of the target substrate W, thereby bonding the bare die D to the target substrate W (step S105). Furthermore, when multiple bare dies D are electrically connected to a single element W2, the bonding of the bare die D to the target substrate W is performed on a per-type basis for each bare die D.

After bonding the bare die D, the target substrate W is transported to the wafer cassette C2. First, the third transport device 52 removes the target substrate W from the bonding device 60 and transports it to the second storage device 50. Next, the second transport device 32 removes the target substrate W from the second storage device 50 and transports it to the first storage device 30. Finally, the first transport device 22 removes the target substrate W from the first storage device 30 and stores it in the wafer cassette C2.

Furthermore, the carrier E after separating the bare die D is stored in the wafer cassette C4. First, the third transport device 52 removes the carrier E from the bonding device 60 and transports it to the second storage device 50. Next, the second transport device 32 removes the carrier E from the second storage device 50 and transports it to the first storage device 30. Finally, the first transport device 22 removes the carrier E from the first storage device 30 and stores it in the wafer cassette C4.

Next, the bonding device 60 according to one embodiment will be described with reference to Figures 5 and 6. The bonding device 60 separates a plurality of bare dies D from the carrier E and bonds them to the target substrate W. For example, the bonding device 60 separates the plurality of bare dies D one by one from the carrier E and bonds them to the target substrate W in sequence.

The bonding device 60 includes, for example, a carrier holding part 61, a substrate holding part 62, and a transport part 63. The carrier holding part 61 holds the carrier E. The substrate holding part 62 holds the target substrate W. The transport part 63 transports the bare die D from the carrier E held by the carrier holding part 61 to the target substrate W held by the substrate holding part 62.

The transport section 63 includes, for example, a pickup section 64 and an assembly section 65. The pickup section 64 separates and transports the bare die D from the carrier E held by the carrier holding section 61. The pickup section 64 can also flip the bare die D up and down during transport, so that the bonding surface Da of the bare die D faces downward. The assembly section 65 receives the bare die D from the pickup section 64 and bonds the received bare die D to the target substrate W held by the substrate holding section 62.

The pickup unit 64 includes, for example, a first adsorption head 64a and a first moving mechanism 64b. The first adsorption head 64a adsorbs the bare die D. Since the first adsorption head 64a adsorbs the bonding surface Da of the bare die D, it can also adsorb in a non-contact manner to avoid contaminating the bonding surface Da. The first moving mechanism 64b moves the first adsorption head 64a in the X-axis, Y-axis, and Z-axis directions. Alternatively, the first moving mechanism 64b can rotate the first adsorption head 64a vertically, thereby rotating the bare die D vertically. This allows the bonding surface Da of the bare die D to be rotated vertically.

The assembly part 65 includes, for example, a second adsorption head 65a and a second moving mechanism 65b. The second adsorption head 65a adsorbs the bare crystal D from the side opposite to the first adsorption head 64a. The second adsorption head 65a adsorbs the surface Db of the bare crystal D opposite to the bonding surface Da. Since contamination of the surface Db opposite to the bonding surface Da is not a problem, the second adsorption head 65a can also contact the bare crystal D. This can improve the adsorption force and suppress positional displacement.

The second moving mechanism 65b moves the second adsorption head 65a in the Z-axis direction, thereby bonding the bare die D to the target substrate W. To improve the accuracy of the bonding position, the second moving mechanism 65b can also move the second adsorption head 65a in the X and Y-axis directions, and can also rotate the second adsorption head 65a around the vertical axis. The amount of movement or rotation required to improve the accuracy of the bonding position is very small; when viewed from above, the second adsorption head 65a appears to move almost nothing.

The bonding device 60 includes a pushing portion 66. The pushing portion 66 may supply gas to the first through-hole E3 of the carrier substrate E1, or insert a pin (not shown) into the first through-hole E3, thereby pushing the resin film E2. The pushing direction is to move the resin film E2 away from the carrier substrate E1. The resin film E2 may be deformed only near one of the plurality of bare chips D, thereby forming a wedge-shaped gap between the resin film E2 and the bare chip D, and allowing the bare chip D to separate smoothly from the resin film E2.

The bonding device 60 includes a first moving part 68. The first moving part 68 is used to change the bare die D pushed by the pushing part 66, thereby moving the pushing part 66 relative to the carrier holding part 61. For example, the first moving part 68 moves the carrier holding part 61 in the X-axis and Y-axis directions, and moves the pushing part 66 in the Z-axis direction. The first moving part 68 may also move only one of the carrier holding part 61 and the pushing part 66.

Preferably, the first moving part 68 is located between the carrier holding part 61 and the pushing part 66, and only moves the carrier holding part 61 in the X-axis and Y-axis directions. If the pushing part 66 does not move in the X-axis and Y-axis directions, the picking part 64 can pick up the bare die D at the same receiving position each time. Therefore, the operation of the picking part 64 can be simplified.

The bonding device 60 may also include a second moving part 69. The second moving part 69 moves the substrate holding part 62. The second moving part 69 moves the substrate holding part 62 in the X-axis and Y-axis directions to change the bonding position of the bare die D to the target substrate W. As a result, the pickup part 64 can transfer the bare die D to the assembly part 65 at the same transfer position each time. Therefore, the operation of the pickup part 64 can be simplified. The second moving part 69 can also move the substrate holding part 62 in the Z-axis direction.

To improve the accuracy of the bonding position of the bare die D to the target substrate W, the bonding device 60 may include at least one of a first imaging unit 71, a second imaging unit 72, and a third imaging unit 73. Furthermore, the first imaging unit 71, the second imaging unit 72, and the third imaging unit 73 may not need to capture images every time the bare die D is bonded to the target substrate W, but may instead capture images periodically.

As shown in Figure 5, the first tapping part 71 taps the alignment mark on the bonding surface Da of the bare die D held by the second adsorption head 65a. The number of alignment marks tapped is, for example, two, but is not particularly limited. The alignment mark may also be a special mark or part of the electronic circuit of the bare die D.

The first imaging unit 71 is, for example, disposed below the second adsorption head 65a. The first imaging unit 71 transmits the captured image to the control circuit 9. The control circuit 9 performs image processing on the image captured by the first imaging unit 71, thereby detecting and setting the position of the bare die D in the first coordinate system of the second adsorption head 65a.

As shown in Figure 6, the second snapping part 72 snaps the alignment mark of the bonding surface Wa of the target substrate W held by the substrate holding part 62. The number of snapping alignment marks is, for example, two, but is not particularly limited. The alignment mark may also be a special mark, or it may be part of the electronic circuit of the component W2 of the target substrate W.

The second imaging unit 72 is disposed, for example, above the substrate holding unit 62, and is provided, for example, on the second suction head 65a. The second imaging unit 72 transmits the captured image to the control circuit 9. The control circuit 9 performs image processing on the image captured by the second imaging unit 72, thereby detecting the position of the element W2 set in the second coordinate system of the substrate holding unit 62.

The control circuit 9 uses images captured by at least one of the first imaging unit 71 and the second imaging unit 72 to align the bare die D held by the second adsorption head 65a with the component W2 of the target substrate W held by the substrate holding unit 62. This alignment is performed by controlling at least one of the second moving mechanism 65b and the second moving unit 69. Before bonding the bare die D to the target substrate W, the position of the bare die D or the component W2 can be corrected, and the accuracy of the bonding position can be improved.

The third imaging unit 73, after the bare die D and the component W2 are bonded, simultaneously captures the alignment mark on the bonding surface Da of the bare die D and the alignment mark on the bonding surface Wa of the target substrate W. The third imaging unit 73, for example, captures the alignment mark between the bare die D and the target substrate W by transmitting light through the bare die D. The third imaging unit 73 is, for example, composed of an infrared camera.

When the third imaging unit 73 captures images of the alignment mark between the bare die D and the target substrate W through transmission through the bare die D, it is, for example, positioned above the substrate holding part 62 and, for example, provided on the second adsorption head 65a. The third imaging unit 73 transmits the captured image to the control circuit 9. The control circuit 9 performs image processing on the image captured by the third imaging unit 73 to detect the deviation between the actual bonding position and the target bonding position.

The control circuit 9 uses the image captured by the third imaging unit 73 to align the positions of the bare die D held by the second adsorption head 65a and the target substrate W held by the substrate holding part 62 during the next bonding of the bare die D and the target substrate W. By taking into account the characteristics of the bonding device 60, the position of the bare die D or the target substrate W can be corrected, thereby improving the accuracy of the bonding position.

Next, before describing the pressing part 66 according to one embodiment with reference to FIG. 7, the pressing part 66 according to the reference embodiment will be described with reference to FIG. 9. After the pressing part 66 presses the resin film E2, the carrier substrate E1 may deform slowly as shown by the dotted line in FIG. 9(A) around the pressing position. In order to suppress this slow deformation, an adsorption part 67 is provided.

The adsorption portion 67 adsorbs the carrier substrate E1 around the pushing portion 66. With the adsorption portion 67 suppressing deformation of the carrier substrate E1 around the pushing portion 66, the pushing portion 66 deforms the resin film E2. The resin film E2 can be deformed only near one of the plurality of bare crystals D, thus forming a wedge-shaped gap between the resin film E2 and the bare crystal D.

When the pressing part 66 presses the resin film E2 with gas pressure, the adsorption part 67 is particularly effective in suppressing the gradual deformation of the carrier substrate E1. When the gradual deformation of the carrier substrate E1 occurs as shown by the dotted line in FIG9(A), gas may leak from the gas supply chamber formed between the carrier substrate E1 and the pressing part 66.

The pushing part 66 includes, for example, a pushing head 66a. The pushing head 66a forms a gas supply chamber between itself and the carrier substrate E1. The gas supply chamber is connected to the first through hole E3. The pushing part 66 includes an annular sealing member 66b. The sealing member 66b contacts the carrier substrate E1 and seals the gas supply chamber. By supplying gas to the gas supply chamber, the bare die D can be pushed by the pressure of the gas.

The adsorption section 67 includes, for example, an adsorption head 67a. The adsorption head 67a forms a gas suction chamber between itself and the carrier substrate E1. The gas suction chamber is formed in an annular shape to surround the gas supply chamber. The adsorption section 67 includes an annular sealing member 67b. The sealing member 67b contacts the carrier substrate E1 and seals the gas suction chamber. By generating a pressure lower than atmospheric pressure (negative pressure) in the gas suction chamber, the carrier substrate E1 can be vacuum-adsorbed by the pressure difference.

In order to allow the pushing part 66 and the adsorption part 67 to contact the carrier substrate E1, the carrier holding part 61 is formed in a ring shape and adsorbs the periphery of the bottom surface of the carrier substrate E1. The pushing part 66 and the adsorption part 67 are disposed inside the ring-shaped carrier holding part 61 and contact the center of the bottom surface of the carrier substrate E1.

The pushing part 66 and the adsorption part 67 move relative to the carrier holding part 61 in order to change the bare die D pushed by the pushing part 66. As described above, the first moving part 68 preferably moves only the carrier holding part 61 in the X-axis direction and the Y-axis direction among the carrier holding part 61 and the pushing part 66.

In the reference sample, the following problems (A1) to (A2) exist. (A1) Since the pushing part 66 and the adsorption part 67 are disposed inside the annular carrier holding part 61, the range of motion of the carrier holding part 61 in the X-axis and Y-axis directions is limited. Furthermore, even if the pushing part 66 and the adsorption part 67 are moved in the X-axis and Y-axis directions instead of the carrier holding part 61, the range of motion is still limited. As a result, as shown in FIG9(B), the position of the bare die D that can be pushed by the pushing part 66 is limited. Consequently, the number of bare dies D that can be mounted on the carrier E is relatively small.

(A2) When the first moving part 68 moves relative to the carrier holding part 61 to change the bare die D pushed by the pushing part 66, the pushing part 66 and the adsorption part 67 will repeatedly contact the carrier E. As a result, the sealing components 66b and 67b may deteriorate, generating particles and contaminating the carrier E. The contamination of the carrier E may transfer to the bare die D. Alternatively, when the pushing part 66 pushes the bare die D with the pin, the pushing part 66 may not contact the carrier E. However, since the adsorption part 67 will still contact the carrier E, the contamination of the carrier E will not change.

In the reference sample, in addition to the above (A1) to (A2), the following problem (A3) also exists. (A3) When the parallelism accuracy between the sealing components 66b and 67b and the carrier E is low, if the sealing components 66b and 67b are forcibly pressed against the carrier E to prevent gas leakage, it may cause the carrier E to bend and break. Therefore, the parallelism accuracy requirement is high, and more effort is required to adjust the parallelism.

To address the problems described in (A1) to (A3) above, this embodiment includes the following configurations (B1) to (B2) as shown in FIG7(A). (B1) The carrier holding part 61 includes: a first surface 61a abutting against the carrier E, a second surface 61b facing the opposite direction to the first surface 61a, and a plurality of second through holes 61c penetrating between the first surface 61a and the second surface 61b. (B2) The pushing part 66 includes a gas supply mechanism 66c that supplies gas to the first through hole E3 through the second through holes 61c. Furthermore, as shown in FIG8, the pushing part 66 may also include a pin driving mechanism 66e that inserts the pin 66d into the first through hole E3 through the second through hole 61c.

According to this embodiment, the pushing part 66 is disposed on the opposite side of the carrier E, with the carrier holding part 61 as the reference. For example, when the first surface 61a of the carrier holding part 61 is the top surface and the second surface 61b is, for example, the bottom surface, the pushing part 66 is disposed below the bottom surface of the carrier holding part 61. Therefore, when the first moving part 68 moves the pushing part 66 and the carrier holding part 61 relative to each other in the X-axis and Y-axis directions in order to change the bare die D pushed by the pushing part 66, there is no interference between the pushing part 66 and the carrier holding part 61, and the range of motion is wider. As a result, as shown in FIG7(B), the number of bare dies D that can be mounted on the carrier E can be increased. Therefore, the replacement frequency of vehicle E can be reduced and the processing capacity can be increased.

In this embodiment, the resin film E2 is deformed by the pushing part 66 while the carrier holding part 61 replaces the adsorption part 67 in the reference embodiment, thus suppressing deformation of the carrier substrate E1 around the pushing part 66. Therefore, the adsorption part 67 is not required, which makes maintenance easier. As shown in FIG7(A), the carrier holding part 61 includes an adsorption groove 61d for vacuum adsorbing the carrier substrate E1 onto the first surface 61a. In order to suppress overall deformation of the carrier substrate E1, the diameter of the first surface 61a is preferably greater than the diameter of the carrier substrate E1. In order to cause local deformation of the resin film E2, the adsorption groove 61d is preferably provided between adjacent second through holes 61c. The adsorption groove 61d is formed, for example, in a lattice shape.

According to this embodiment, when the first moving part 68 moves relative to the carrier holding part 61 to change the bare die D pushed by the pushing part 66, the pushing part 66 repeatedly contacts the carrier holding part 61 instead of the carrier E. As a result, even if the sealing component 66b deteriorates and generates particles, causing contamination of the second surface 61b of the carrier holding part 61, the first surface 61a of the carrier holding part 61 remains almost uncontaminated. Thus, contamination of the carrier E can be suppressed.

In this embodiment, the sealing component 66b contacts the carrier retaining part 61, not the carrier E. Even when the parallelism accuracy between the sealing component 66b and the carrier retaining part 61 is relatively low, and the sealing component 66b is forcefully pressed against the carrier retaining part 61 to prevent gas leakage, the carrier retaining part 61, having higher rigidity than the carrier E, will not be damaged. Therefore, the required parallelism accuracy is lower, simplifying the parallelism adjustment work.

Furthermore, as shown in Figure 8, when the pressing part 66 presses the bare die D with the pin part 66d, the pressing part 66 may not have a sealing component 66b. As shown in Figure 7(A), when the pressing part 66 includes a gas supply mechanism 66c, the pressing part 66 may also include a sealing component 66b. When the pressing part 66 includes a pin drive mechanism 66e, the pressing part 66 may not include a sealing component 66b.

The gas supply mechanism 66c supplies gas to the first through-hole E3 through the second through-hole 61c. The gas supply mechanism 66c includes a supply line forming a gas flow path. The gas supply mechanism 66c may include, for example, an on/off valve and a pressure controller in the middle section of the supply line. The on/off valve opens and closes the gas flow path. The pressure controller controls the gas pressure. The gas supply mechanism 66c may also include a pressure relief valve in the middle section of the supply line. The pressure relief valve discharges the gas.

At the boundary between the carrier holding part 61 and the carrier E, it is preferable that the first through hole E3 and the second through hole 61c are connected one-to-one. Furthermore, the number of second through holes 61c is only required to be greater than or equal to the number of first through holes E3. The second through holes 61c only need to be present at the locations where the first through holes E3 are present; the first through holes E3 and the second through holes 61c do not necessarily need to be connected one-to-one.

As shown in Figure 7(A), when the pushing part 66 includes a gas supply mechanism 66c, at the boundary between the carrier holding part 61 and the carrier E, the opening of the second through hole 61c is preferably smaller than the opening of the first through hole E3 and is disposed inside the opening of the first through hole E3. In this case, since the gas pressure hardly acts on the bottom surface of the carrier substrate E1, the bending of the carrier substrate E1 can be suppressed.

The pressing part 66 can also use a plurality of second through holes 61c and a plurality of first through holes E3 when pressing a bare die D. For example, when pressing a bare die D, the pressing part 66 can also supply gas to the plurality of first through holes E3 through the plurality of second through holes 61c as shown in FIG. 7(A), or insert the pin part 66d as shown in FIG. 8. A bare die D can be pressed through a plurality of points. The plurality of points can also be divided into a plurality of groups and pressed sequentially.

The pin drive mechanism 66e shown in Figure 8 includes an actuator that drives the pin 66d. Before the first moving part 68 moves relative to the carrier holding part 61 in the X-axis and Y-axis directions to change the bare die D pushed by the pushing part 66, the pin 66d will retract from the first through hole E3 and the second through hole 61c. Subsequently, the pin 66d is inserted into the first through hole E3 through the second through hole 61c and pushes the bare die D.

The foregoing has described embodiments of the joining device and joining method according to the present invention, but the present invention is not limited to the aforementioned embodiments. Various changes, modifications, substitutions, additions, deletions, and combinations are possible within the scope of the patent application. These, of course, also fall within the technical scope of the present invention.

1: Joining System 2: Inbound/Outbound Station 3: First Processing Station 5: Second Processing Station 9: Control Circuit 20: Placement Stage 21: First Transport Area 22: First Transport Device 30: First Storage Device 31: Second Transport Area 32: Second Transport Device 33: First Activation Device 34: First Hydrophilization Device 35: Second Activation Device 36: Second Hydrophilization Device 50: Second Storage Device 51: Third Transport Area 52: Third Transport Device 60: Joining Device 61: Carrier Holding Part 61a: First Surface 61b: Second Surface 61c: Second Through Hole 61d: Adsorption Groove 62: Substrate Holding Part 63: Transport Part 64: Pick-up Part 64a: First Adsorption Head 64b: First Moving Mechanism 65: Assembly Part 65a: Second adsorption head 65b: Second moving mechanism 66: Pushing part 66a: Pushing head 66b: Sealing component 66c: Gas supply mechanism 66d: Pin part 66e: Pin part driving mechanism 67: Adsorption part 67a: Adsorption head 67b: Sealing component 68: First moving part 69: Second moving part 71: First tapping part 72: Second tapping part 73: Third tapping part 91: Calculation unit 92: Storage unit C1~C4: Wafer cassette D: Bare die Da: Bonding surface Db: Surface E: Carrier E1: Carrier substrate E2: Resin film E3: First through hole S101~S105: Step W: Target substrate Wa: Bonding surface W1: Semiconductor substrate W2: Component

Figure 1 is a top view showing a bonding system according to an embodiment. Figure 2(A) is a cross-sectional view showing an example of a target substrate before bonding the die. Figure 2(B) is a cross-sectional view showing an example of a target substrate after bonding the die. Figure 3 is a cross-sectional view showing an example of a carrier before separating the die. Figure 4 is a flowchart showing a bonding method according to an embodiment. Figure 5 is a cross-sectional view showing an example of the operation of a bonding device according to an embodiment. Figure 6 is a cross-sectional view showing an example of the operation of the bonding device following Figure 5. Figure 7(A) is a cross-sectional view showing a pushing part according to an embodiment. Figure 7(B) is a top view showing an example of a die that can be pushed by the pushing part shown in Figure 7(A). Figure 8 is a cross-sectional view showing the pusher according to a modified example. Figure 9(A) is a cross-sectional view showing the pusher according to a reference example. Figure 9(B) is a top view showing an example of a bare die that can be pushed by the pusher shown in Figure 9(A).

60: Joining device

61: Vehicle Holding Part

61a: First Page

61b: Second page

61c: Second through hole

61d: Adsorption groove

62:Substrate holding part

63: Moving Department

64: Pickup Department

64a: First Adsorption Head

64b: First moving mechanism

65: Assembly Department

65a: Second Adsorption Head

65b: Second Mobility Mechanism

66: Push-down section

66a: Push head

66b: Sealing component

66c: Gas supply mechanism

68: First Moving Section

69: Second Moving Section

71: First Shot

72: Second beat

73: Third Beat

D: Bare Crystal

Da: joint surface

Db: face

E: Vehicle

E1: Carrier substrate

E2: Resin membrane

E3: First through hole

W: target substrate

Wa: Joint surface

W1: Semiconductor substrate

W2: Component

Claims (9)

A bonding device is used to separate and bond a plurality of bare dies from a carrier to a target substrate. The carrier includes: a carrier substrate; a plurality of first through holes penetrating the carrier substrate in the thickness direction; and a resin film disposed on the carrier substrate; wherein the plurality of bare dies are mounted on the resin film. The bonding device includes: a carrier holding portion for holding the carrier; a pushing portion for pushing the bare dies by supplying gas to the first through holes or inserting a pin into the first through holes; and a first moving portion for moving the pushing portion relative to the carrier holding portion to change the bare dies pushed by the pushing portion. The carrier holding portion includes: a first surface abutting the carrier; a second surface facing the opposite direction to the first surface; and a plurality of second through holes penetrating between the first surface and the second surface. The pushing part includes a gas supply mechanism that supplies gas to the first through hole through the second through hole, or a pin drive mechanism that inserts a pin into the first through hole through the second through hole. The coupling device as described in claim 1, wherein the pushing part includes the gas supply mechanism. The coupling device as described in claim 2, wherein, at the boundary between the carrier holding portion and the carrier, the opening of the second through hole is smaller than the opening of the first through hole, and is disposed inside the opening of the first through hole. The engagement device as described in claim 2, wherein the pushing portion includes: a sealing member abutting against the second surface of the carrier holding portion. The engagement device as described in claim 1, wherein the pushing portion includes the pin drive mechanism. The bonding device as described in claim 1, wherein the carrier holding portion includes: an adsorption groove for vacuum adsorbing the carrier substrate onto the first surface; the adsorption groove is disposed between adjacent second through holes. The coupling device as described in claim 1, wherein the first through hole and the second through hole are connected one-to-one at the boundary between the carrier holding portion and the carrier. The bonding device as described in claim 1, wherein the pushing portion uses a plurality of the second through-holes and a plurality of the first through-holes when pushing one of the bare dies. A bonding method comprising separating a plurality of the bare dies from the carrier and bonding them to the target substrate using a bonding device as described in any one of claims 1 to 8.