TW202601803A - Joining device and joining method - Google Patents

Abstract

This invention provides a technique for smoothly separating a plurality of bare dies from a carrier. The bonding device of this invention separates a plurality of bare dies from a carrier and bonds them to a target substrate. The carrier includes: a carrier substrate; and a resin film disposed on the carrier substrate on a facing surface opposite to the bare die. The bare die has: a first surface facing the resin film; and a second surface facing the opposite direction to the first surface. The bonding device includes: a carrier holding portion holding the carrier substrate from the side opposite to the resin film; a substrate holding portion holding the target substrate; and a transport portion transporting the bare die from the carrier to the target substrate. The transport unit includes: an adsorption head for adsorbing the bare die from the side opposite to the carrier; and a pushing head for pushing the resin film toward the carrier substrate around the first surface of the bare die adsorbed by the adsorption head.

Description

Connection device and connection method

This invention relates to a joining device and a joining method.

The chip mounting system described in Patent 1 includes: a chip feeding device, a bonding device, a surface treatment device, a loading and unloading unit, and a transport unit (paragraph [0225] of Patent 1). The chip feeding device individually feeds a plurality of chips. The chips are adhered to adhesive tape covering an opening of a frame and are lifted upwards one by one, and flipped up and down one by one (paragraph [0251] of Patent 1). The bonding device mounts the chips supplied by the chip feeding device onto a substrate. [Prior Art Documents][Patent Documents]

[Patent Document 1] Japanese Patent No. 6337400

[Problem to be solved by the invention] The present invention provides a technique for smoothly separating multiple bare dies from a carrier.

[Technical Means for Solving the Problem] According to one aspect of the present invention, a bonding device separates a plurality of bare dies from a carrier and bonds them to a target substrate. The carrier includes: a carrier substrate; and a resin film disposed on the carrier substrate on a facing surface opposite to the bare dies. The bare die has: a first surface facing the resin film; and a second surface facing the opposite direction to the first surface. The bonding device includes: a carrier holding portion holding the carrier substrate from the side opposite to the resin film; a substrate holding portion holding the target substrate; and a transport portion transporting the bare dies from the carrier to the target substrate. The transport unit includes: an adsorption head for adsorbing the bare die from the side opposite to the carrier; and a pushing head for pushing the resin film toward the carrier substrate around the first surface of the bare die adsorbed by the adsorption head.

[Invention Effect] According to one aspect of the invention, it is possible to smoothly separate multiple bare crystals from the carrier.

The embodiments of the present invention will be described below with reference to the drawings. Furthermore, the same or similar symbols will be used for the same components in each drawing to omit further explanation. In this specification, the X-axis, Y-axis, and Z-axis are perpendicular to each other. The X-axis and Y-axis are horizontal, and the Z-axis is vertical. The X-axis includes the positive X-axis and the negative X-axis, which is opposite to the positive X-axis. The Y-axis includes the positive Y-axis and the negative Y-axis, which is opposite to the positive Y-axis. The Z-axis includes the positive Z-axis and the negative Z-axis, which is opposite to the positive Z-axis.

Referring to Figures 1 to 4, a bonding system 1 according to one embodiment will be described. The bonding system 1 separates a plurality of bare dies individually from a carrier and bonds them to a target substrate W. As shown in Figure 2, the target substrate W has: a semiconductor substrate W1 such as a silicon wafer; and a plurality of elements W2 formed on the semiconductor substrate W1. The plurality of elements W2 are divided by a plurality of dicing lines orthogonal to each other. Each element W2 contains electronic circuitry. As shown in Figure 3, a bare die D is electrically connected to each element W2. Subsequently, the target substrate W is cut along the dicing lines to slice the elements W2 one by one, thereby obtaining a semiconductor device. The semiconductor device includes elements W2 and a bare die D.

The bare die D is a semiconductor substrate on which a plurality of components different from component W2 are formed, and is cut into individual components. The electronic circuits of the bare die D are electrically connected to the electronic circuits of component W2 on the target substrate W. Furthermore, the type and number of bare dies electrically connected to a component W2 are not particularly limited. Although not shown, a component W2 may also be electrically connected to a plurality of bare dies.

As shown in Figure 4, a carrier E holds a plurality of bare dies D. Each bare die D has: a first surface Da facing the carrier E; and a second surface Db facing the opposite direction to the first surface Da. The first surface Da is preferably the bottom surface, and the second surface Db is preferably the top surface. The bonding surface between the bare die D and the target substrate W is preferably the second surface Db. If the second surface Db is the bonding surface, the bonding surface of each bare die D can be activated and hydrophilicated. The carrier E has: a carrier substrate E1; and a resin film E2 disposed on the carrier substrate E1 on the opposing surface facing the bare dies D.

The carrier E holds a plurality of bare crystals D on a resin film E2. The carrier E may be electrostatically adsorbed for the bare crystals D. In addition, by pressing the bare crystals D against the resin film E2, the resin film E2 can be deformed to expel gas between the bare crystals D and the resin film E2, and the bare crystals D may also be vacuum adsorbed onto the resin film E2.

The carrier substrate E1 may be conductive or insulating. It is preferable that the carrier substrate E1 is made of a rigid material. For example, it is preferably made of silicon (Si), ceramic, aluminum, aluminum alloy, stainless steel, zirconium oxide, silicon carbide (SiC), titanium, or glass. The carrier substrate E1 may have the same diameter as the target substrate W. Furthermore, the carrier substrate E1 may have the same thickness as the target substrate W.

The resin film E2 is preferably made of a flexible material, specifically a material with an elasticity coefficient of 2 GPa or less, more preferably 0.5 GPa or less. From the viewpoint of durability at the bonding surface of the modified bare crystal D, the resin film E2 is preferably made of, for example, polyimide or EVA (ethylene/vinyl acetate copolymer). The thickness of the resin film E2 is, for example, 10 μm. Furthermore, although the resin film E2 is a single layer in this embodiment, it may also be multiple layers. For example, the resin film E2 may also have a polyolefin layer and an acrylic adhesive layer.

As shown in Figure 1, the assembly system 1 includes: an inlet/outlet station 2, a first processing station 3, a second processing station 5, and a control circuit 9. The inlet/outlet station 2, the first processing station 3, and the second processing station 5 are arranged in a row from the negative X-axis direction to the positive X-axis direction. Furthermore, although not shown, a plurality of second processing stations 5 can also be provided, and the plurality of second processing stations 5 can be arranged in a row from the negative X-axis direction to the positive X-axis direction.

The loading/unloading station 2 is equipped with a loading stage 20. Wafer cassettes C1 to C4 are loaded onto the loading stage 20. Wafer cassette C1 houses the target substrate W before bonding the bare die D. Wafer cassette C2 houses the target substrate W after bonding the bare die D. Wafer cassette C3 houses the carrier E before separating the bare die D. Wafer cassette C4 houses the carrier E after separating the bare die D.

The inbound/outbound station 2 has a first transport area 21 and a first transport device 22. The first transport area 21 is adjacent to the loading platform 20. The first transport area 21 extends in the Y-axis direction. The first transport device 22 has a transport arm. The transport arm holds and transports the target substrate W and the carrier E in the first transport area 21. The number of transport arms can be one or multiple. The transport arm for the target substrate W and the transport arm for the carrier E can also be provided separately. The first transport device 22 has a drive unit (not shown) for moving or rotating the transport arm. The transport arm can move in the horizontal direction (both the X-axis and Y-axis directions) and in the vertical direction (Z-axis direction) and rotate about the vertical axis.

The first processing station 3 has a first storage device 30. The first storage device 30 is adjacent to the first transport area 21. The first storage device 30 is arranged on the side opposite to the loading platform 20, with the first transport area 21 as a reference. The first storage device 30 temporarily stores the target substrate W and the carrier E. The first storage device 30 has a plurality of platforms arranged in a vertical direction. Each platform holds the target substrate W and the carrier E. The platform for the target substrate W and the platform for the carrier E can also be set separately.

The first processing station 3 has a second transport area 31 and a second transport device 32. The second transport area 31 is adjacent to the first storage device 30 and extends from the first storage device 30 in the positive X-axis direction. The second transport device 32 has a transport arm. The transport arm holds and transports the target substrate W and the carrier E in the second transport area 31. The number of transport arms can be one or more. The transport arm for the target substrate W and the transport arm for the carrier E can also be provided separately. The second transport device 32 has a drive unit (not shown) for moving or rotating the transport arm. The transport arm can move in the horizontal direction (both the X-axis and Y-axis directions) and the vertical direction (Z-axis direction) and rotate about the vertical axis.

The first processing station 3 includes a first activation device 33, a first hydrophilization device 34, a second activation device 35, and a second hydrophilization device 36. The first activation device 33, the first hydrophilization device 34, the second activation device 35, and the second hydrophilization device 36 are adjacent to the second transport area 31 and are located on the positive Y-axis side or the negative Y-axis side of the second transport area 31.

The first activation device 33 activates the bonding surface (e.g., the second surface Db) of the bare die D while it is held in place by a carrier E. The first activation device 33 is, for example, a plasma treatment device. In the first activation device 33, oxygen gas, used as a treatment gas, is excited under reduced pressure, thereby plasma-plating and ionizing it. The bonding surface of the bare die D is activated by irradiating it with oxygen ions. The treatment gas is not limited to oxygen gas; for example, nitrogen gas may also be used.

The first hydrophilization device 34 hydrophilizes the bonding surfaces of the bare die D while it is held in place by a carrier E. For example, the first hydrophilization device 34 supplies pure water (e.g., deionized water) to the bare die D while rotating the carrier E held in a rotating chuck. The pure water imparts OH groups to the bonding surfaces of the pre-activated bare die D. The hydrogen bonds between the OH groups are used to bond the bare die D to the target substrate W.

The second activation device 35 activates the bonding surface Wa of the target substrate W. The second activation device 35 is, for example, a plasma treatment device. In the second activation device 35, oxygen gas, used as a treatment gas, is excited under reduced pressure, and then plasma-encapsulated and ionized. The bonding surface Wa of the target substrate W is activated by irradiating it with oxygen ions. The treatment gas is not limited to oxygen gas; for example, nitrogen gas may also be used.

The second hydrophilization device 36 hydrophilizes the bonding surface Wa of the target substrate W. For example, the second hydrophilization device 36 rotates the target substrate W, which is held in a rotating chuck, while supplying pure water (e.g., deionized water) to the target substrate W. The pure water imparts OH groups to the bonding surface Wa of the pre-activated target substrate W. The bare die D can be bonded to the target substrate W using the hydrogen bonds between the OH groups.

The second processing station 5 is equipped with a second storage device 50. The second storage device 50 is adjacent to the second transport area 31. The second storage device 50 is configured on the opposite side of the first storage device 30, with the second transport area 31 as a reference. The second storage device 50 temporarily stores the target substrate W and the carrier E. The second storage device 50 has a plurality of platforms arranged in a vertical direction. Each platform holds at least one of the target substrate W and the carrier E. The platform for the target substrate W and the platform for the carrier E can also be provided separately.

The second processing station 5 includes a third transport area 51 and a third transport device 52. The third transport area 51 is adjacent to the second storage device 50 and extends from the second storage device 50 in the positive X-axis direction. The third transport device 52 has a transport arm. The transport arm holds and transports the target substrate W and the carrier E in the third transport area 51. The number of transport arms can be one or multiple. The transport arm for the target substrate W and the transport arm for the carrier E can also be provided separately. The third transport device 52 has a drive unit (not shown) for moving or rotating the transport arm. The transport arm can move in the horizontal direction (both the X-axis and Y-axis directions) and the vertical direction (Z-axis direction) and rotate about the vertical axis.

The second processing station 5 is equipped with a bonding device 60. The bonding device 60 is adjacent to the third transport area 51 and is disposed on the positive Y-axis side or the negative Y-axis side of the third transport area 51. The bonding device 60 separates the bare die D from the carrier E and bonds the bare die D to the target substrate W by aligning the bonding surface (e.g., the second surface Db) of the separated bare die D with the bonding surface Wa of the target substrate W. Details of the bonding device 60 will be described in detail later.

The control circuit 9 is, for example, a computer. The control circuit 9 includes, for example, a calculation unit 91 such as a CPU (Central Processing Unit) and a storage unit 92 such as memory. The storage unit 92 stores programs for various processes implemented in the connection system 1. The control circuit 9 controls the operation of the connection system 1 by causing the calculation unit 91 to execute the programs stored in the storage unit 92. Alternatively, each device constituting the connection system 1 may have a lower-level control circuit for controlling the operation of the device, and a higher-level control circuit that integrates the control of multiple lower-level control circuits. The control circuit 9 may also be composed of multiple lower-level control circuits and a higher-level control circuit.

The control circuit 9 implements the various control actions described in this specification by means of electronic circuits including a CPU, FPGA (Field Programmable Gate Array), or ASIC (Application Specific Integrated Circuit), and by implementing instruction codes stored in memory, or by designing circuits for special purposes.

Next, referring to FIG. 5, a bonding method according to one embodiment will be described. The processing in FIG. 5 is performed under the control of the control circuit 9. First, the first transport device 22 removes the carrier E from the wafer cassette C3 and transports it to the first storage device 30. Then, the second transport device 32 removes the carrier E from the first storage device 30 and transports it to the first activation device 33.

Next, the first activation device 33 activates the bonding surface (e.g., the second surface Db) of the bare die D while it is held in place by the carrier E (step S101). Subsequently, the second transport device 32 removes the carrier E from the first activation device 33 and transports it to the first hydrophilization device 34.

Next, the first hydrophilization device 34 hydrophilizes the bonding surface of the bare die D while it is held in place by the carrier E (step S102). Afterwards, the second transport device 32 removes the carrier E from the first hydrophilization device 34 and transports it to the second storage device 50. Then, the third transport device 52 removes the carrier E from the second storage device 50 and transports it to the bonding device 60.

In parallel with steps S101 to S102, the following steps S103 to S104 are performed. First, the first transport device 22 removes the target substrate W from the wafer cassette C1 and transports it to the first storage device 30. Next, the second transport device 32 removes the target substrate W from the first storage device 30 and transports it to the second activation device 35.

Next, the second activation device 35 activates the bonding surface Wa of the target substrate W (step S103). Subsequently, the second transport device 32 removes the target substrate W from the second activation device 35 and transports it to the second hydrophilization device 36.

Next, the second hydrophilization device 36 hydrophilizes the bonding surface Wa of the target substrate W (step S104). Then, the second transport device 32 removes the target substrate W from the second hydrophilization device 36 and transports it to the second storage device 50. Next, the third transport device 52 removes the target substrate W from the second storage device 50 and transports it to the bonding device 60.

Next, the bonding device 60 separates the bare die D from the carrier E and faces the bonding surface of the separated bare die D toward the bonding surface Wa of the target substrate W, thereby bonding the bare die D to the target substrate W (step S105). Furthermore, when multiple bare dies D are electrically connected to a component W2, the bonding of the bare die D to the target substrate W is performed according to the type of bare die D.

After the bare die D is bonded, the target substrate W is transported to the wafer cassette C2. First, the third transport device 52 removes the target substrate W with the bare die D bonded to the bonding device 60 and transports it to the second storage device 50. Next, the second transport device 32 removes the target substrate W with the bare die D bonded to the second storage device 50 and transports it to the first storage device 30. Finally, the first transport device 22 removes the target substrate W with the bare die D bonded to the first storage device 30 and stores it in the wafer cassette C2.

Furthermore, the carrier E after separating the bare die D is stored in the wafer cassette C4. First, the third transport device 52 removes the carrier E after separating the bare die D from the bonding device 60 and transports it to the second storage device 50. Next, the second transport device 32 removes the carrier E after separating the bare die D from the second storage device 50 and transports it to the first storage device 30. Finally, the first transport device 22 removes the carrier E after separating the bare die D from the first storage device 30 and stores it in the wafer cassette C4.

Next, referring to Figures 6 and 7, an example of the bonding device 60 will be described. The bonding device 60 separates a plurality of bare dies D from the carrier E individually and bonds them to the target substrate W. The bonding device 60 includes, for example, a carrier holding portion 61, a substrate holding portion 62, a transport portion 63, and a control circuit 93. The carrier holding portion 61 holds the carrier substrate E1 from the side opposite to the resin film E2 (e.g., the lower side). The substrate holding portion 62 holds the target substrate W. The transport portion 63 transports the bare dies D from the carrier E held by the carrier holding portion 61 to the target substrate W held by the substrate holding portion 62. The control circuit 93 may also be part of the control circuit 9.

Next, referring to Figures 6 and 7, an example of the transport section 63 will be described. The transport section 63 includes, for example, a pick-up section 64 and a mounting section 65. The pick-up section 64 separates and transports the bare die D from the carrier E held by the carrier holding section 61. The pick-up section 64 can also flip the bare die D up and down during transport. The bonding surface (e.g., the second surface Db) of the bare die D can be facing down. The mounting section 65 receives the bare die D from the pick-up section 64 and bonds the received bare die D to the target substrate W held by the substrate holding section 62.

The pickup unit 64 includes, for example, an adsorption head 64a and a first moving mechanism 64b. The adsorption head 64a adsorbs the bare die D from the side opposite to the carrier E (e.g., the upper side). Since the adsorption head 64a adsorbs the bonding surface (e.g., the second surface Db) of the bare die D, adsorption can be performed in a non-contact manner to avoid contaminating the bonding surface. The first moving mechanism 64b moves the adsorption head 64a in the X-axis, Y-axis, and Z-axis directions. Furthermore, the first moving mechanism 64b can also rotate the bare die D vertically by rotating the adsorption head 64a vertically. The bonding surface of the bare die D can be rotated vertically. Details of the pickup unit 64 will be described in detail later.

The mounting section 65 includes, for example, an adsorption head 65a and a moving mechanism 65b. The adsorption head 65a adsorbs the bare crystal D from the side opposite to the adsorption head 64a (e.g., the upper side). The adsorption head 65a also adsorbs the non-bonding surface (e.g., the first surface Da) opposite to the bonding surface of the bare crystal D. Since contamination of the non-bonding surface is not a problem, contact between the adsorption head 65a and the bare crystal D is permissible. This improves the adsorption force and suppresses positional shift.

The moving mechanism 65b bonds the bare die D to the target substrate W by moving the adsorption head 65a in the Z-axis direction. To improve the accuracy of the bonding position, the moving mechanism 65b can also move the adsorption head 65a in the X-axis and Y-axis directions, or it can rotate the adsorption head 65a around the vertical axis. The amount of movement or rotation required to improve the accuracy of the bonding position is small, so the adsorption head 65a can be seen to be almost motionless when viewed from above.

The coupling device 60 may also include a carrier moving part 68. The carrier moving part 68 moves the carrier E together with the carrier holding part 61. The carrier moving part 68 moves the carrier E, for example, in the X-axis and Y-axis directions. In this way, the pickup part 64 can pick up the bare die D at the same receiving position each time. Therefore, the operation of the pickup part 64 can be simplified. The carrier moving part 68 can also move the carrier E in the Z-axis direction.

Furthermore, the bonding device 60 may also lack the carrier moving part 68. In other words, the carrier holding part 61 may also be fixed. In this case, the receiving position of the pickup part 64 receiving the bare die D changes with the bare die D.

The bonding device 60 may also include a substrate moving section 69. The substrate moving section 69 moves the target substrate W together with the substrate holding section 62. For example, the substrate moving section 69 moves the target substrate W in the X-axis and Y-axis directions. This allows the bonding position of the die D to the target substrate W to be varied. As a result, the pick-up section 64 can transfer the die D to the mounting section 65 at the same transfer position each time. Therefore, the operation of the pick-up section 64 can be simplified. The substrate moving section 69 can also move the target substrate W in the Z-axis direction.

To improve the accuracy of the bonding position between the bare die D and the target substrate W, the bonding device 60 may also include at least one of a first imaging unit 71, a second imaging unit 72, and a third imaging unit 73. Furthermore, the first imaging unit 71, the second imaging unit 72, and the third imaging unit 73 may capture images during the bonding of the bare die D and the target substrate W, or they may capture images periodically.

The first tapping unit 71 taps the alignment mark on the bonding surface (e.g., the second surface Db) of the bare die D held by the adsorption head 65a. The number of alignment marks tapped is, for example, two, but is not particularly limited. The alignment mark may be a dedicated mark or may be part of the electronic circuitry of the bare die D.

The first imaging unit 71 is disposed below, for example, the adsorption head 65a. The first imaging unit 71 transmits the captured image to the control circuit 93. The control circuit 93 detects the position of the bare die D in a first coordinate system set on the adsorption head 65a by performing image processing on the image captured by the first imaging unit 71.

The second tapping section 72 taps the alignment mark on the bonding surface Wa of the target substrate W, which is held by the substrate holding section 62. The number of alignment marks tapped is, for example, two, but is not particularly limited. The alignment mark may be a dedicated mark or may be part of the electronic circuit of the component W2 of the target substrate W.

The second imaging unit 72 is disposed above, for example, the substrate holding unit 62, and is provided on, for example, the suction head 65a. The second imaging unit 72 transmits the captured image to the control circuit 93. The control circuit 93 detects the position of the element W2 on the second coordinate system set on the substrate holding unit 62 by performing image processing on the image captured by the second imaging unit 72.

The control circuit 93 uses images captured by at least one of the first imaging unit 71 and the second imaging unit 72 to align the bare die D held by the adsorption head 65a with the component W2 of the target substrate W held by the substrate holding unit 62. This alignment is performed by at least one of the control movement mechanism 65b and the substrate movement unit 69. Before bonding the bare die D and the target substrate W, the position of the bare die D or the component W2 can be corrected, and the accuracy of the bonding position can be improved.

The third imaging unit 73, after bonding the bare die D and the component W2, simultaneously captures images of both the alignment mark on the bonding surface (e.g., the second surface Db) of the bare die D and the alignment mark on the bonding surface Wa of the target substrate W. The third imaging unit 73, for example, captures the alignment mark between the bare die D and the target substrate W through the bare die D. The third imaging unit 73 is, for example, configured as an infrared camera.

The third imaging unit 73, when capturing the alignment mark between the bare die D and the target substrate W through the bare die D, is, for example, positioned above the substrate holding part 62 and, for example, provided on the adsorption head 65a. The third imaging unit 73 transmits the captured image to the control circuit 93. The control circuit 93 detects the offset between the actual bonding position and the target bonding position by performing image processing on the image captured by the third imaging unit 73.

The control circuit 93 uses the image captured by the third imaging unit 73 to align the bare die D, held by the adsorption head 65a, and the target substrate W, held by the substrate holding part 62, in the subsequent bonding process between the bare die D and the target substrate W. Taking into account the characteristics of the bonding device 60, the position of the bare die D or the target substrate W can be corrected, and the accuracy of the bonding position can be improved.

Next, referring to Figures 8 to 10, an example of the configuration of the pickup unit 64 will be described. The pickup unit 64 separates and transports the bare die D from the carrier E held by the carrier holding unit 61. The bare die D has: a first surface Da facing the resin film E2; and a second surface Db facing the opposite direction to the first surface Da. The first surface Da is preferably the bottom surface, and the second surface Db is preferably the top surface. The bonding surface between the bare die D and the target substrate W is preferably the second surface Db.

The pickup unit 64 is equipped with a pushing head 64c. As shown in FIG9, around the first surface Da of the bare die D adsorbed by the pickup head 64a, the pushing head 64c pushes the resin film E2 toward the carrier substrate E1. Thereby, a wedge-shaped gap S can be formed between the bare die D and the resin film E2 around the first surface Da of the bare die D adsorbed by the pickup head 64a. The bare die D and the resin film E2 can be smoothly separated starting from the wedge-shaped gap S.

As shown in Figure 9, the push head 64c can also push the resin film E2 toward the carrier substrate E1 by pushing the second surface Db of the bare crystal D, which is different from that adsorbed by the adsorption head 64a. When the spacing between adjacent bare crystals D is narrow and the push head 64c cannot contact the resin film E2, it can still push the resin film E2.

The bare die D pushed by the pusher head 64c and the bare die D adsorbed by the adsorption head 64a are adjacent to each other. The first surface Da of the bare die D pushed by the pusher head 64c is closer to the carrier substrate E1 than the first surface Da of the bare die D adsorbed by the adsorption head 64a. This causes the resin film E2 to deform elastically, forming a wedge-shaped gap S between the bare die D and the resin film E2. Furthermore, although the first surface Da of the bare die D pushed by the pusher head 64c is close to the carrier substrate E1, it does not contact the carrier substrate E1.

As shown in Figure 9, the pickup unit 64 may include a second moving mechanism 64d. The second moving mechanism 64d moves the pushing head 64c relative to the suction head 64a. The second moving mechanism 64d is, for example, a pneumatic cylinder. Driven by the second moving mechanism 64d, the pushing head 64c pushes the resin film E2.

The pickup unit 64 may have a support unit 64e. The support unit 64e may, for example, include: an adsorption head 64a, a pushing head 64c, a second moving mechanism 64d, and a third moving mechanism 64f (described later). The first moving mechanism 64b moves the pushing head 64c and the adsorption head 64a together by moving the support unit 64e.

Compared to the second moving mechanism 64d, which moves the pushing head 64c relative to the support portion 64e, the third moving mechanism 64f moves the adsorption head 64a relative to the support portion 64e. Thus, as shown in FIG10, while the pushing head 64c is pushing the resin film E2 towards the carrier substrate E1, the bare die D and the adsorption head 64a can be separated from the carrier E together.

Furthermore, if the first moving mechanism 64b and the second moving mechanism 64d are present, the bare die D and the adsorption head 64a can be separated from the carrier E together while the resin film E2 is being pushed towards the carrier substrate E1 by the pusher head 64c. However, if the third moving mechanism 64f is present, control becomes much easier.

Next, referring again to Figures 8 to 10, an example of the operation of the pickup unit 64 will be explained. The operation of the pickup unit 64 is performed under the control of the control circuit 93.

First, as shown in Figure 8, the first moving mechanism 64b moves the adsorption head 64a to the receiving position for receiving the bare crystal D. The adsorption head 64a adsorbs a bare crystal D from the side opposite to the carrier E (e.g., the upper side). As shown in Figure 8, the pushing head 64c may not push the resin film E2 around the first surface Da of the bare crystal D adsorbed by the adsorption head 64a.

Next, as shown in Figure 9, the second moving mechanism 64d lowers the pushing head 64c relative to the support portion 64e, causing the pushing head 64c to push the resin film E2 downwards. During this period, the first moving mechanism 64b stops the support portion 64e. As a result, a wedge-shaped gap S is formed between the bare crystal D and the resin film E2 at the periphery of the first surface Da of the bare crystal D adsorbed by the adsorption head 64a.

Next, as shown in Figure 10, the third moving mechanism 64f raises the adsorption head 64a relative to the support portion 64e, causing the bare crystal D to detach from the resin film E2 together with the adsorption head 64a. During this period, the first moving mechanism 64b stops the support portion 64e. Since the pushing head 64c is in a downward pushing state on the resin film E2, the bare crystal D easily separates from the resin film E2.

Alternatively, the process shown in Figure 10 can be omitted. Instead, after the process shown in Figure 9, the support portion 64e can be raised by the first moving mechanism 64b, thereby causing the bare crystal D and the adsorption head 64a to detach from the resin film E2 together. In this case, the pushing head 64c rises together with the adsorption head 64a, causing the resin film E2 to regain its elasticity.

As described above, according to this embodiment, the resin film E2 is pushed by the pushing head 64c, and a wedge-shaped gap S is formed between the bare crystal D and the resin film E2 around the periphery of the first surface Da of the bare crystal D adsorbed by the adsorption head 64a. The bare crystal D and the resin film E2 can be smoothly separated starting from the wedge-shaped gap S.

Furthermore, as another technique for forming the wedge-shaped gap S, we conceive of locally lifting the resin film E2 upward by providing a plurality of through holes penetrating the carrier substrate E1 in the thickness direction (the vertical direction in Figures 8-10) and supplying gas to specific through holes, or inserting pins into specific through holes. More than one through hole is provided in each bare die D.

According to this embodiment, the resin film E2 is pushed from the side opposite to the carrier substrate E1 by the push head 64c, without the need for through holes penetrating the carrier substrate E1 in the thickness direction. If there are no through holes in the carrier substrate E1, the step of cleaning the through holes is eliminated. Furthermore, if there are no through holes in the carrier substrate E1, there is no risk of particulate matter adhering to the through holes contaminating the bare die D.

Furthermore, since a nozzle or pin is disposed below a through hole when a through hole is formed in the carrier substrate E1, the carrier holding part 61 is made into a ring shape to prevent interference between the nozzle or pin. The carrier holding part 61 only holds the periphery of the side of the carrier substrate E1 opposite to the resin film E2 (e.g., the bottom surface).

According to this embodiment, since there are no through holes in the carrier substrate E1, the carrier holding portion 61 can hold the entire surface (e.g., the bottom surface) of the carrier substrate E1 opposite to the resin film E2. This prevents the carrier substrate E1 and the resin film E2 from slightly bending as shown by the dotted chain in FIG9 when the push head 64c pushes the resin film E2. Because the carrier holding portion 61 holds the entire carrier substrate E1 flatly, the resin film E2 can be locally deformed, thus forming a wedge-shaped gap S.

The carrier holding portion 61 has an adsorption surface opposite to the carrier substrate E1. It is preferable that the adsorption surface is larger than the side of the carrier substrate E1 opposite to the resin film E2 (e.g., the bottom surface). For example, a perforation is provided on the adsorption surface. By drawing gas from the perforation, the pressure in the perforation can be lower than atmospheric pressure, thereby adsorbing the carrier substrate E1. Alternatively, the carrier holding portion 61 may have grooves instead of perforations. The grooves may, for example, be a plurality of concentric circles. The grooves may also be radial.

Next, referring to FIG11, the pickup unit 64 according to the first variant will be explained. As shown in FIG11, when the spacing between adjacent bare crystals D is wide and the pushing head 64c can contact the resin film E2, the pushing head 64c can also directly push the resin film E2. In this case, a wedge-shaped gap S can also be formed around the periphery of the first surface Da of the bare crystal D adsorbed by the adsorption head 64a, between the bare crystal D and the resin film E2.

For example, as shown in Figure 11, the push head 64c pushes the resin film E2 between two adjacent bare dies D. The opposing surface (e.g., the bottom surface) of the push head 64c, which faces the resin film E2, is closer to the carrier substrate E1 than the first surface Da of the bare die D adsorbed by the adsorption head 64a. This causes the resin film E2 to elastically deform, forming a wedge-shaped gap S between the bare die D and the resin film E2. Furthermore, although the bottom surface of the push head 64c is close to the carrier substrate E1, it does not contact the carrier substrate E1.

Next, referring to FIG12, the pickup unit 64 according to the second variation will be described. The pickup unit 64 may also have a nozzle 64g. The nozzle 64g sprays gas into the wedge-shaped gap S. The sprayed gas is not particularly limited, for example, it is air, nitrogen, or an inert gas. The wedge-shaped gap S can be widened by the pressure of the gas, and the bare crystal D and the resin film E2 can be smoothly separated from the wedge-shaped gap S. Although the nozzle 64g is disposed inside the push head 64c, it may also be disposed outside the push head 64c.

Furthermore, although the push head 64c shown in Figure 12 directly pushes the resin film E2, it is also possible, as described above, for the push head 64c to push the resin film E2 by pushing the second surface Db of the bare crystal D, which is different from that adsorbed by the adsorption head 64a. In the latter case, since a wedge-shaped gap S is also formed, the nozzle 64g can spray gas onto the wedge-shaped gap S. In any case, the wedge-shaped gap S can be expanded by the pressure of the gas, and the bare crystal D and the resin film E2 can be smoothly separated from the wedge-shaped gap S as the starting point.

Next, referring to Figure 13, an example of the push head 64c will be described. The first face Da of the bare crystal D can be rectangular. In this case, the push head 64c is preferably configured as a four-cornered frame to surround the four sides of the first face Da of the bare crystal D adsorbed by the adsorption head 64a. A wedge-shaped gap S can be formed within the entire range of the four sides of the first face Da of the bare crystal D adsorbed by the adsorption head 64a.

Furthermore, the pushing head 64c may not push all of the plurality of bare crystals D surrounding the "bare crystal D adsorbed by the adsorption head 64a", but only a portion of them (see Figure 14). It is also possible not to form a wedge-shaped gap S throughout the entire range of the four sides of the first face Da of the bare crystal D adsorbed by the adsorption head 64a.

However, the wedge-shaped gap S is preferably formed at at least one corner of the first surface Da of the bare crystal D adsorbed by the adsorption head 64a. This facilitates the separation of the bare crystal D from the resin film E2. Therefore, the pushing head 64c is preferably positioned around at least one corner of the first surface Da of the bare crystal D adsorbed by the adsorption head 64a, pushing the resin film E2 toward the carrier substrate E1.

When the pusher head 64c pushes the second surface Db of a bare crystal D that is different from the bare crystal D adsorbed by the adsorption head 64a, it is preferable that the pusher head 64c pushes the entire second surface Db of the bare crystal D, as shown in Figures 13 and 14. This can disperse the load throughout the second surface Db of the bare crystal D and suppress damage to the bare crystal D. Furthermore, the more bare crystals D pushed by the pusher head 64c, the better the load can be dispersed.

The foregoing description pertains to embodiments of the joining device and joining method according to the present invention, but the present invention is not limited to the aforementioned embodiments. Various changes, modifications, substitutions, additions, deletions, and combinations are possible within the scope of the patent application. Such modifications, substitutions, additions, deletions, and combinations naturally fall within the technical scope of the present invention.

1: Joining system 2: Inbound/outbound station 3: First processing station 5: Second processing station 9, 93: Control circuit 20: Placement platform 21: First transport area 22: First transport device 30: First storage device 31: Second transport area 32: Second transport device 33: First activation device 34: First hydrophilization device 35: Second activation device 36: Second hydrophilization device 50: Second storage device 51: Third transport area 52: Third transport device 60: Joining device 61: Carrier holding part 62: Substrate holding part 63: Transport part 64: Pick-up part 64a: Adsorption head 64b: First Moving mechanism 64c: Push head 64d: Second moving mechanism 64e: Support part 64f: Third moving mechanism 64g: Nozzle 65: Mounting part 65a: Adsorption head 65b: Moving mechanism 68: Carrier moving part 69: Substrate moving part 71: First tapping part 72: Second tapping part 73: Third tapping part 91: Calculation part 92: Storage part C1~C4: Wafer cassette D: Bare die Da: First surface Db: Second surface E1: Carrier substrate E2: Resin film E: Carrier S101~S105: Step S: Gap W1: Semiconductor substrate W2: Component W: Target substrate Wa: Bonding surface

[Figure 1] Figure 1 is a top view of a bonding system according to an embodiment. [Figure 2] Figure 2 is a cross-sectional view of an example of a target substrate. [Figure 3] Figure 3 is a cross-sectional view of an example of a bare die bonded to a target substrate. [Figure 4] Figure 4 is a cross-sectional view of an example of multiple bare dies mounted on a carrier. [Figure 5] Figure 5 is a flowchart of a bonding method according to an embodiment. [Figure 6] Figure 6 is a cross-sectional view of an example of the operation of a bonding device according to an embodiment. [Figure 7] Figure 7 is a cross-sectional view of an example of the operation of the bonding device following Figure 6. [Figure 8] Figure 8 is a cross-sectional view of an example of the operation of the pickup unit. [Figure 9] Figure 9 is a cross-sectional view of an example of the operation of the pickup unit following Figure 8. [Figure 10] Figure 10 is a cross-sectional view showing an example of the operation of the pickup unit following Figure 9. [Figure 11] Figure 11 is a cross-sectional view showing the pickup unit according to the first variation. [Figure 12] Figure 12 is a cross-sectional view showing the pickup unit according to the second variation. [Figure 13] Figure 13 is a top view showing an example of the push head. [Figure 14] Figure 14 is a top view showing another example of the push head.

61: Vehicle Holding Part

64: Pickup Department

64a: Adsorption head

64b: First Mobility Mechanism

64c: Push head

64d: Second moving mechanism

64e: Support section

64f: Third Mobile Facility

D: Bare Crystal

Da: First impressions

Db: Second side

E1: Carrier substrate

E2: Resin membrane

E: Vehicle

S: Gap

Claims (10)

A bonding device for separating a plurality of bare dies from a carrier and bonding them to a target substrate, wherein the carrier has: a carrier substrate; and a resin film disposed on a facing surface of the carrier substrate opposite to the bare dies; the bare die has: a first surface facing the resin film; and a second surface in the opposite direction to the first surface; the bonding device includes: a carrier holding portion for holding the carrier substrate from the side opposite to the resin film; a substrate holding portion for holding the target substrate; and a transport portion for transporting the bare dies from the carrier to the target substrate; the transport portion includes: an adsorption head for adsorbing the bare dies from the side opposite to the carrier; and a pushing head for pushing the resin film toward the carrier substrate around the first surface of the bare dies adsorbed by the adsorption head. The bonding device as described in claim 1, wherein the push head pushes the resin film toward the carrier substrate by pushing the second side of the bare die, which is different from the bare die adsorbed by the adsorption head. The bonding device as described in claim 2, wherein the push head pushes the entire second surface of the bare crystal, which is different from the bare crystal adsorbed by the adsorption head. The bonding device as described in any one of claims 1 to 3, wherein the first surface of the bare die is rectangular; the push head pushes the resin film toward the carrier substrate around the corner of the first surface of the bare die adsorbed by the adsorption head. The bonding device as described in any one of claims 1 to 3, wherein the first face of the bare die is rectangular; the push head is configured as a four-cornered frame to surround the four sides of the first face of the bare die adsorbed by the adsorption head. The coupling device as described in any one of claims 1 to 3, wherein the conveying part has: a first moving mechanism for moving the suction head; and a second moving mechanism for moving the push head relative to the suction head. The bonding device as described in claim 6 is equipped with a control circuit, wherein the control circuit sequentially performs the following controls: control of the adsorption head adsorbing the bare die; control of the push head pushing the resin film toward the carrier substrate around the bare die adsorbed by the adsorption head; and control of separating the bare die and the adsorption head together from the carrier while the push head is pushing the resin film toward the carrier substrate. The bonding device as described in any one of claims 1 to 3, wherein the resin film is pushed toward the carrier substrate by the push head, and a wedge-shaped gap is formed between the bare die and the resin film at the periphery of the first surface of the bare die adsorbed by the adsorption head; the conveying part has a nozzle for spraying gas into the wedge-shaped gap. The bonding device as described in any one of claims 1 to 3, wherein the carrier holding portion holds the entire surface of the carrier substrate opposite to the resin film. A bonding method wherein a plurality of the bare dies are separated from the carrier using a bonding device as described in any one of claims 1 to 3, for bonding to the target substrate.