WO2024043342A1 - 弾性波装置 - Google Patents
弾性波装置 Download PDFInfo
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- WO2024043342A1 WO2024043342A1 PCT/JP2023/030811 JP2023030811W WO2024043342A1 WO 2024043342 A1 WO2024043342 A1 WO 2024043342A1 JP 2023030811 W JP2023030811 W JP 2023030811W WO 2024043342 A1 WO2024043342 A1 WO 2024043342A1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
- H03H9/02031—Characteristics of piezoelectric layers, e.g. cutting angles consisting of ceramic
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02157—Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02228—Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02992—Details of bus bars, contact pads or other electrical connections for finger electrodes
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/175—Acoustic mirrors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/176—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of ceramic material
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
Definitions
- the present invention relates to an elastic wave device.
- the elastic wave device is, for example, an elastic wave resonator, and is used, for example, in a ladder type filter.
- a ladder filter In order to obtain good characteristics in a ladder filter, it is necessary to increase the capacitance ratio between the plurality of elastic wave resonators. In this case, it is necessary to increase the capacitance of some of the elastic wave resonators in the ladder filter.
- This configuration is a configuration in which an electrode connected to a potential different from the input potential and the output potential, such as a reference potential, is arranged between an electrode connected to the input potential and an electrode connected to the output potential.
- the present inventors have also discovered that even if the above configuration is simply adopted, the insertion loss may not be sufficiently reduced.
- An object of the present invention is to provide an elastic wave device that can promote miniaturization of the filter device and reduce insertion loss.
- a piezoelectric film including a piezoelectric layer made of lithium niobate is provided on the piezoelectric layer, a first bus bar, and one end is connected to the first bus bar.
- a first comb-shaped electrode having a plurality of first electrode fingers connected to each other; a second busbar provided on the piezoelectric layer; and one end connected to the second busbar.
- a second comb-shaped electrode having a plurality of first electrode fingers and a plurality of second electrode fingers interposed with each other;
- a plurality of third electrode fingers are respectively provided on the piezoelectric layer so as to be arranged with the first electrode fingers and the second electrode fingers, and the adjacent third electrode fingers are arranged on the piezoelectric layer.
- a third electrode having a connecting electrode connecting the electrode fingers and connected to a different potential from the first comb-shaped electrode and the second comb-shaped electrode;
- One of the first comb-shaped electrode and the second comb-shaped electrode is connected to an input potential, the other of the first comb-shaped electrode and the second comb-shaped electrode is connected to an output potential, and the first comb-shaped electrode , when the order in which the second electrode finger and the third electrode finger are arranged starts from the first electrode finger, the first electrode finger, the third electrode finger, and the second electrode finger.
- the electrode finger and the third electrode finger constitute one cycle, and the connecting electrode connects at least the tips of the adjacent third electrode fingers on the first bus bar side, and A connection electrode is located between at least the first bus bar and the tips of the plurality of second electrode fingers, and the first electrode finger, the second electrode finger, and the third electrode finger extend.
- the direction is defined as the electrode finger stretching direction, and the direction perpendicular to the electrode finger stretching direction is defined as the electrode finger orthogonal direction, and when viewed in plan, the tips of the plurality of second electrode fingers and the connection
- a first gap region is located between the electrodes and extends in a direction perpendicular to the electrode fingers, and a first gap region is located between the connection electrode and the first bus bar and extends in a direction perpendicular to the electrode fingers.
- a region extending to is a second gap region, which is located between the tips of the plurality of first electrode fingers and the second bus bar in the electrode finger extending direction when viewed in plan.
- a mass adding film is provided on at least a portion of at least one of a region that does not include the connection electrode and extends in a direction perpendicular to the electrode fingers, the first gap region, and the second gap region.
- a piezoelectric film including a piezoelectric layer made of lithium niobate, a piezoelectric film provided on the piezoelectric layer, a first bus bar, and one end connected to the first bus bar a first comb-shaped electrode provided on the piezoelectric layer and having a plurality of first electrode fingers connected to each other; a second busbar; and a first comb-shaped electrode having one end connected to each of the second busbars.
- a second comb-shaped electrode having a plurality of first electrode fingers and a plurality of second electrode fingers inserted into each other;
- a plurality of third electrode fingers are provided on the piezoelectric layer so as to be lined up with the first electrode fingers and the second electrode fingers, and the adjacent third electrode fingers are arranged on the piezoelectric layer. and a third electrode connected to a different potential from the first comb-shaped electrode and the second comb-shaped electrode.
- One of the first comb-shaped electrode and the second comb-shaped electrode is connected to an input potential
- the other of the first comb-shaped electrode and the second comb-shaped electrode is connected to an output potential
- the first comb-shaped electrode When the order in which the finger, the second electrode finger, and the third electrode finger are lined up starts from the first electrode finger, the first electrode finger, the third electrode finger, and the third electrode finger start from the first electrode finger.
- the second electrode finger and the third electrode finger constitute one cycle, and the connecting electrode connects at least the tips of the adjacent third electrode fingers on the first bus bar side,
- the connection electrode is located between at least the first bus bar and the tips of the plurality of second electrode fingers, and the first electrode finger, the second electrode finger, and the third electrode finger
- the direction in which the electrode fingers extend is defined as the electrode finger extension direction
- the direction orthogonal to the electrode finger extension direction is defined as the electrode finger orthogonal direction
- the tips of the plurality of second electrode fingers and the A region located between the connection electrodes and extending perpendicularly to the electrode fingers is a first gap region, and a region located between the connection electrodes and the first bus bar and extending perpendicularly to the electrode fingers A region extending in the direction is a second gap region, which is located between the tips of the plurality of first electrode fingers and the second bus bar in the direction in which the electrode fingers extend when viewed in plan.
- a through hole is provided in the piezoelectric film in at least one of a region that does not include the connection electrode and extends in a direction perpendicular to the electrode fingers, the first gap region, and the second gap region.
- the present invention it is possible to provide an elastic wave device in which the size of the filter device can be reduced and the insertion loss can be reduced.
- FIG. 1 is a schematic front sectional view of an elastic wave device according to a first embodiment of the present invention.
- FIG. 2 is a schematic plan view of the elastic wave device according to the first embodiment of the present invention.
- FIG. 3 is a schematic front sectional view showing the vicinity of the first to third electrode fingers in the first embodiment of the present invention.
- FIG. 4 is a diagram showing the passage characteristics of the elastic wave devices of the first embodiment of the present invention and the first comparative example.
- FIG. 5 is a diagram showing a map of the fractional band with respect to the Euler angles (0°, ⁇ , ⁇ ) of LiNbO 3 when d/p is brought as close to 0 as possible.
- FIG. 6 is a schematic plan view of an elastic wave device according to a second embodiment of the present invention.
- FIG. 6 is a schematic plan view of an elastic wave device according to a second embodiment of the present invention.
- FIG. 7 is a diagram showing the passage characteristics of the elastic wave devices of the second embodiment of the present invention and the first comparative example.
- FIG. 8 is a schematic plan view of an elastic wave device according to a third embodiment of the present invention.
- FIG. 9 is a diagram showing the passage characteristics of the elastic wave devices of the third embodiment of the present invention and the first comparative example.
- FIG. 10 is a diagram showing the transmission characteristics when the width of the first to fourth gap regions is 1.5 ⁇ m in the elastic wave devices of the fourth embodiment of the present invention and the second comparative example.
- FIG. 11 is a diagram showing the transmission characteristics when the widths of the first to fourth gap regions are 5 ⁇ m in the elastic wave devices of the fourth embodiment of the present invention and the second comparative example.
- FIG. 12 is a diagram showing the transmission characteristics when the width of the first to fourth gap regions is 1.5 ⁇ m in the elastic wave devices of the fifth embodiment of the present invention and the second comparative example.
- FIG. 13 is a diagram showing the transmission characteristics when the widths of the first to fourth gap regions are 5 ⁇ m in the elastic wave devices of the fifth embodiment of the present invention and the second comparative example.
- FIG. 14 is a schematic plan view of an elastic wave device according to a sixth embodiment of the present invention.
- FIG. 15 is a schematic plan view of an elastic wave device according to a seventh embodiment of the present invention.
- FIG. 16 is a schematic plan view of an elastic wave device according to an eighth embodiment of the present invention.
- FIG. 17 is a schematic plan view of an elastic wave device according to a ninth embodiment of the present invention.
- FIG. 18 is a schematic plan view of an elastic wave device according to a tenth embodiment of the present invention.
- FIG. 19 is a schematic plan view of the first elastic wave resonator in the eleventh embodiment of the present invention.
- FIG. 20 is a schematic front sectional view showing the vicinity of the first to third electrode fingers in the eleventh embodiment of the present invention.
- FIG. 21 is a schematic plan view of an elastic wave device according to the twelfth embodiment of the present invention.
- FIG. 22 is a diagram showing the transmission characteristics of the elastic wave devices of the twelfth embodiment of the present invention and the first comparative example.
- FIG. 23 is a schematic plan view of an elastic wave device according to a thirteenth embodiment of the present invention.
- FIG. 24 is a schematic plan view of an elastic wave device according to the fourteenth embodiment of the present invention.
- FIG. 25 is a diagram showing the transmission characteristics of the elastic wave devices of the fourteenth embodiment of the present invention and the first comparative example.
- FIG. 26 is a schematic plan view of an elastic wave device according to the fifteenth embodiment of the present invention.
- FIG. 27(a) is a schematic perspective view showing the appearance of an elastic wave device that utilizes thickness-shear mode bulk waves
- FIG. 27(b) is a plan view showing the electrode structure on the piezoelectric layer.
- FIG. 28 is a cross-sectional view of a portion taken along line AA in FIG. 27(a).
- FIG. 29(a) is a schematic front cross-sectional view for explaining Lamb waves propagating through the piezoelectric film of an acoustic wave device
- FIG. 29(b) is a thickness slip that propagates through the piezoelectric film in the acoustic wave device.
- FIG. 2 is a schematic front cross-sectional view for explaining a mode of bulk waves.
- FIG. 30 is a diagram showing the amplitude direction of the bulk wave in the thickness shear mode.
- FIG. 31 is a diagram showing the resonance characteristics of an elastic wave device that uses bulk waves in thickness-shear mode.
- FIG. 32 is a diagram showing the relationship between d/p and the fractional band of a resonator, where p is the distance between the centers of adjacent electrodes, and d is the thickness of the piezoelectric layer.
- FIG. 33 is a plan view of an elastic wave device that uses thickness-shear mode bulk waves.
- FIG. 34 is a diagram showing the resonance characteristics of the elastic wave device of the reference example in which spurious signals appear.
- FIG. 35 is a diagram showing the relationship between the fractional band and the amount of phase rotation of spurious impedance normalized by 180 degrees as the magnitude of spurious.
- FIG. 36 is a diagram showing the relationship between d/2p and metallization ratio MR.
- FIG. 37 is a diagram showing a map of fractional bands with respect to Euler angles (0°, ⁇ , ⁇ ) of LiNbO 3 when d/p is brought as close to 0 as possible.
- FIG. 38 is a front sectional view of an acoustic wave device having an acoustic multilayer film.
- FIG. 39 is a partially cutaway perspective view for explaining an elastic wave device that uses Lamb waves.
- FIG. 1 is a schematic front sectional view of an elastic wave device according to a first embodiment of the present invention.
- FIG. 2 is a schematic plan view of the elastic wave device according to the first embodiment.
- FIG. 1 is a schematic front sectional view of a central region F of an intersection region E, which will be described later.
- each electrode is shown with hatching.
- electrodes may be hatched in the same manner.
- the elastic wave device 10 shown in FIG. 1 is configured to be able to utilize a thickness shear mode.
- the elastic wave device 10 is an acoustic coupling filter. The configuration of the elastic wave device 10 will be explained below.
- the elastic wave device 10 has a piezoelectric substrate 12 and a functional electrode 11.
- the piezoelectric substrate 12 is a substrate having piezoelectricity.
- the piezoelectric substrate 12 includes a support member 13 and a piezoelectric layer 14 as a piezoelectric film.
- the piezoelectric layer 14 is a layer made of piezoelectric material.
- a piezoelectric film is a film having piezoelectricity, and does not necessarily refer to a film made of a piezoelectric material.
- the piezoelectric film is a single layer piezoelectric layer 14, and is a film made of a piezoelectric material.
- the piezoelectric film may be a laminated film including the piezoelectric layer 14.
- the support member 13 includes a support substrate 16 and an insulating layer 15. An insulating layer 15 is provided on the support substrate 16. A piezoelectric layer 14 is provided on the insulating layer 15.
- the support member 13 may be composed only of the support substrate 16. Note that the support member 13 does not necessarily have to be provided.
- the piezoelectric layer 14 has a first main surface 14a and a second main surface 14b.
- the first main surface 14a and the second main surface 14b are opposed to each other.
- the second main surface 14b is located on the support member 13 side.
- the piezoelectric layer 14 is made of lithium niobate. More specifically, in this embodiment, the lithium niobate used for the piezoelectric layer 14 is Z-cut LiNbO 3 .
- the Euler angles ( ⁇ , ⁇ , ⁇ ) of this LiNbO 3 are (0°, 0°, 90°).
- the Euler angles ( ⁇ , ⁇ , ⁇ ) of the piezoelectric layer 14 are not limited to the above. Note that in this specification, when a certain member is made of a certain material, it includes a case where a minute amount of impurity is included to the extent that the electrical characteristics of the acoustic wave device are not significantly deteriorated.
- a functional electrode 11 is provided on the first main surface 14a of the piezoelectric layer 14. As shown in FIG. 2, the functional electrode 11 includes a pair of comb-shaped electrodes and a third electrode 19. Specifically, the pair of comb-shaped electrodes is a first comb-shaped electrode 17 and a second comb-shaped electrode 18. The first comb-shaped electrode 17 is connected to an input potential. The second comb-shaped electrode 18 is connected to the output potential. The third electrode 19 is connected to a reference potential in this embodiment. Note that the third electrode 19 does not necessarily need to be connected to the reference potential. The third electrode 19 may be connected to a different potential from the first comb-shaped electrode 17 and the second comb-shaped electrode 18. However, it is preferable that the third electrode 19 be connected to the reference potential.
- first comb-shaped electrode 17 may be connected to the output potential.
- the second comb-shaped electrode 18 may be connected to an input potential. In this way, the first comb-shaped electrode 17 only needs to be connected to one of the input potential and the output potential.
- the second comb-shaped electrode 18 may be connected to the other of the input potential and the output potential.
- the first comb-shaped electrode 17 and the second comb-shaped electrode 18 are provided on the first main surface 14a of the piezoelectric layer 14.
- the first comb-shaped electrode 17 includes a first bus bar 22 and a plurality of first electrode fingers 25 . One end of each of the plurality of first electrode fingers 25 is connected to the first bus bar 22 .
- the second comb-shaped electrode 18 includes a second bus bar 23 and a plurality of second electrode fingers 26 . One end of each of the plurality of second electrode fingers 26 is connected to the second bus bar 23 .
- the first bus bar 22 and the second bus bar 23 face each other.
- the plurality of first electrode fingers 25 and the plurality of second electrode fingers 26 are inserted into each other.
- the first electrode fingers 25 and the second electrode fingers 26 are arranged alternately in a direction perpendicular to the direction in which the first electrode fingers 25 and the second electrode fingers 26 extend.
- the third electrode 19 has a meandering shape.
- the third electrode 19 includes a plurality of connection electrodes 24 and a plurality of third electrode fingers 27 .
- the plurality of connection electrodes 24 and the plurality of third electrode fingers 27 are provided on the first main surface 14a of the piezoelectric layer 14. Adjacent third electrode fingers 27 are connected to each other by a connecting electrode 24. By repeating this structure, the third electrode 19 has a meandering shape.
- the tips of two adjacent third electrode fingers 27 on the first bus bar 22 side or the tips on the second bus bar 23 side are connected by the connection electrode 24.
- the third electrode fingers 27 other than both ends in the electrode finger orthogonal direction have both a tip on the first bus bar 22 side and a tip on the second bus bar 23 side.
- Each connection electrode 24 is connected.
- the third electrode finger 27 is connected to third electrode fingers 27 on both sides by each connection electrode 24 .
- the third electrode 39 has a meandering shape.
- connection electrode 24 only needs to be located at least on the first bus bar 22 side. It is sufficient that the connection electrode 24 electrically connects the plurality of third electrode fingers 27 to each other.
- the plurality of third electrode fingers 27 extend parallel to the plurality of first electrode fingers 25 and the plurality of second electrode fingers 26.
- a plurality of third electrode fingers 27 are provided so as to line up with the first electrode fingers 25 and the second electrode fingers 26 in the direction in which the first electrode fingers 25 and the second electrode fingers 26 are lined up. . Therefore, the first electrode finger 25, the second electrode finger 26, and the third electrode finger 27 are lined up in one direction.
- the direction in which the first electrode finger 25, second electrode finger 26, and third electrode finger 27 extend is referred to as the electrode finger extension direction, and the direction orthogonal to the electrode finger extension direction is referred to as the electrode finger orthogonal direction.
- the electrode finger arrangement direction is parallel to the electrode finger orthogonal direction.
- the first electrode finger 25, the second electrode finger 26, and the third electrode finger 27 may be collectively referred to simply as an electrode finger.
- FIG. 3 is a schematic front sectional view showing the vicinity of the first to third electrode fingers in the first embodiment.
- the order in which the plurality of electrode fingers are arranged is, starting from the first electrode finger 25, the first electrode finger 25, the third electrode finger 27, the second electrode finger 26, and the third electrode finger 27. This is the order in which one period is Therefore, the order in which the plurality of electrode fingers are arranged is: first electrode finger 25, third electrode finger 27, second electrode finger 26, third electrode finger 27, first electrode finger 25, third electrode finger. The second electrode finger 27, the second electrode finger 26, and so on. If the input potential is IN, the output potential is OUT, and the reference potential is GND, and the order of the multiple electrode fingers is expressed as the order of connected potentials, then IN, GND, OUT, GND, IN, GND, OUT, etc. followed by.
- the electrode fingers located at both ends in the direction orthogonal to the electrode fingers are all the third electrode fingers 27.
- the electrode finger located at the end in the direction orthogonal to the electrode finger is any type of electrode finger among the first electrode finger 25, the second electrode finger 26, and the third electrode finger 27. It may be.
- the distance between the centers of the plurality of adjacent pairs of first electrode fingers 25 and third electrode fingers 27 and the distance between the centers of the plurality of adjacent pairs of second electrode fingers 26 and third electrode fingers 27 are determined.
- the center-to-center distances of the electrode fingers 27 are all the same. However, the distance between the centers of adjacent electrode fingers may not be constant.
- Each electrode finger of the functional electrode 11 is made of a laminated metal film. Specifically, in each electrode finger, a Ti layer, an AlCu layer, and a Ti layer are laminated in this order from the piezoelectric layer 14 side. Note that the material of each electrode finger is not limited to the above. Alternatively, each electrode finger may be made of a single layer of metal film.
- the tips of the plurality of second electrode fingers 26 each face the connection electrode 24 on the first bus bar 22 side with a gap in between in the electrode finger extension direction.
- the region located between the tips of the plurality of second electrode fingers 26 and the connection electrodes 24 in the electrode finger extension direction and extending in the direction perpendicular to the electrode fingers is the first gap region G1. It is.
- connection electrode 24 on the first bus bar 22 side faces the first bus bar 22 with a gap in between in the electrode finger extending direction.
- a region located between the connection electrode 24 and the first bus bar 22 and extending in a direction perpendicular to the electrode fingers is the second gap region G2.
- the tips of the plurality of first electrode fingers 25 each face the connection electrode 24 on the second bus bar 23 side with a gap in the electrode finger extending direction.
- a region that is located between the tips of the plurality of first electrode fingers 25 and the connection electrode 24 on the second bus bar 23 side in the electrode finger extension direction when viewed in plan, and extends in the direction perpendicular to the electrode fingers. is the third gap region G3.
- connection electrode 24 on the second bus bar 23 side faces the second bus bar 23 with a gap in between in the electrode finger extending direction.
- a region located between the connection electrode 24 and the second bus bar 23 and extending in a direction perpendicular to the electrode fingers is the fourth gap region G4.
- the first gap region G1, the second gap region G2, the third gap region G3, and the fourth gap region G4 may be collectively referred to simply as a gap region.
- the elastic wave device 10 is an elastic wave resonator configured to utilize thickness-shear mode bulk waves. As shown in FIG. 2, the elastic wave device 10 has a plurality of excitation regions C. In the plurality of excitation regions C, bulk waves in thickness shear mode and elastic waves in other modes are excited. Note that in FIG. 2, only two excitation regions C among the plurality of excitation regions C are shown.
- Some of the plurality of excitation regions C among all the excitation regions C are regions where adjacent first electrode fingers 25 and third electrode fingers 27 overlap when viewed from a direction perpendicular to the electrode fingers, and where adjacent first electrode fingers 25 and third electrode fingers 27 overlap. This is the area between the centers of the first electrode finger 25 and the third electrode finger 27 that meet.
- the remaining plurality of excitation regions C are regions where adjacent second electrode fingers 26 and third electrode fingers 27 overlap when viewed from the direction perpendicular to the electrode fingers, and where adjacent second electrode fingers 26 and third electrode fingers 27 overlap. This is the area between the centers of the third electrode fingers 27. These excitation regions C are lined up in the direction perpendicular to the electrode fingers.
- the structure of the functional electrode 11 except for the third electrode 19 is the same as that of an IDT (Interdigital Transducer) electrode.
- IDT Interdigital Transducer
- the crossing region E is the area where the adjacent first electrode fingers 25 and third electrode fingers 27 or the adjacent second electrode fingers 26 and third electrode fingers 27 are located. It can also be said that these areas overlap.
- the intersection region E includes a plurality of excitation regions C. Note that the crossover region E and the excitation region C are regions of the piezoelectric layer 14 that are defined based on the configuration of the functional electrode 11.
- the intersecting region E includes a central region F and a pair of edge regions.
- the pair of edge regions is a first edge region H1 and a second edge region H2.
- the first edge region H1 and the second edge region H2 are arranged to face each other with the center region F in between in the electrode finger extending direction.
- the first edge region H1 is located on the first bus bar 22 side.
- the second edge region H2 is located on the second bus bar 23 side.
- the first edge region H1 is adjacent to the first gap region G1.
- the second edge region H2 is adjacent to the third gap region G3.
- the plurality of third electrode fingers 27 extend outside the intersection region E. Specifically, a portion of the plurality of third electrode fingers 27 is located in the first gap region G1 and the third gap region G3.
- the elastic wave device 10 has a pair of mass-adding films 28A and 28B.
- the mass adding film 28A is provided over the first gap region G1 and the first edge region H1.
- the mass adding film 28B is provided over the third gap region G3 and the second edge region H2. Note that the mass adding film 28A and the mass adding film 28B are not provided in the central region F.
- the mass adding film 28A has a band-like shape. Specifically, the mass adding film 28A covers the first main surface 14a of the piezoelectric layer 14, the plurality of first electrode fingers 25, the plurality of second electrode fingers 26, and the like in the first edge region H1. It is provided over a plurality of third electrode fingers 27 . The mass adding film 28A is provided over the first main surface 14a, the plurality of first electrode fingers 25, and the plurality of third electrode fingers 27 in the first gap region G1. The mass adding film 28A is continuously provided so as to overlap the plurality of electrode fingers and the area between the electrode fingers in a plan view.
- planar view refers to viewing from a direction corresponding to the upper side in FIG. 1 along the lamination direction of the support member 13 and the piezoelectric film.
- the piezoelectric layer 14 side is the upper side.
- planar view is synonymous with viewing from the direction facing the main surface.
- the main surface opposing direction is a direction in which the first main surface 14a and the second main surface 14b of the piezoelectric layer 14 face each other. More specifically, the principal surface opposing direction is, for example, the normal direction of the first principal surface 14a.
- the mass adding film 28B is provided over the first main surface 14a of the piezoelectric layer 14 and the plurality of electrode fingers in the second edge region H2 and the third gap region G3.
- the mass adding film 28B is continuously provided so as to overlap with the plurality of electrode fingers and the area between the electrode fingers in a plan view.
- Silicon oxide is used as the material for the mass adding film 28A and the mass adding film 28B.
- the materials of the mass-adding film 28A and the mass-adding film 28B are not limited to the above.
- the feature of this embodiment is that it has the following configuration. 1) In plan view, the third electrode finger of the third electrode 19 is located between the first electrode finger 25 of the first comb-shaped electrode 17 and the second electrode finger 26 of the second comb-shaped electrode 18. 27 shall be provided. 2) The mass adding film 28A and the mass adding film 28B are provided in the first gap region G1 and the third gap region G3.
- the mass adding film is provided in at least a part of at least one of the first gap region G1, the second gap region G2, the third gap region G3, and the fourth gap region G4. good.
- the filter device can be made smaller and the insertion loss can be reduced. The details of this effect will be shown below by comparing the present embodiment and the first comparative example.
- the first comparative example differs from the first embodiment in that a mass adding film is not provided.
- the piezoelectric layer is made of Z-cut lithium niobate.
- the transmission characteristics were compared.
- the design parameters of the elastic wave device 10 having the configuration of the first embodiment are as follows.
- Piezoelectric layer Material... LiNbO3 , Euler angle ( ⁇ , ⁇ , ⁇ )...(0°, 0°, 90°), thickness...400 nm
- First to third electrode fingers Layer structure...Ti layer/AlCu layer/Ti layer from the piezoelectric layer side, thickness of each layer...10nm/390nm/4nm from the piezoelectric layer side The order of the first to third electrode fingers represented by the connected potentials: IN, GND, OUT, GND is repeated. Center-to-center distance between adjacent electrode fingers: 1.4 ⁇ m Duty ratio: 0.3 Dimensions of the first edge region and second edge region along the electrode finger extending direction: 1 ⁇ m Mass addition film thickness: 25nm
- the first comparative example had the same design parameters as the first embodiment, except that no mass-adding film was provided.
- FIG. 4 is a diagram showing the transmission characteristics of the elastic wave devices of the first embodiment and the first comparative example.
- FIG. 4 shows the S21 passing characteristic. The same applies to diagrams showing the passage characteristics other than FIG. 4.
- a filter waveform can be suitably obtained also in the single elastic wave device 10 according to the first embodiment.
- the elastic wave device 10 is an acoustic coupling filter. More specifically, as shown in FIG. 2, the acoustic wave device 10 has an excitation region C located between the centers of adjacent first electrode fingers 25 and third electrode fingers 27, and an excitation region C located between the centers of adjacent first electrode fingers 25 and third electrode fingers 27; It has an excitation region C located between the centers of the finger 26 and the third electrode finger 27. In these excitation regions C, elastic waves of a plurality of modes including a bulk wave of a thickness-shear mode are excited. By combining these modes, a filter waveform can be suitably obtained even in one elastic wave device 10.
- the filter device 10 when the elastic wave device 10 is used in a filter device, a filter waveform can be suitably obtained even with a small number of elastic wave resonators configuring the filter device. Therefore, the filter device can be made smaller.
- the loss is smaller near the center of the pass band than in the first comparative example. Therefore, when the elastic wave device 10 is used in a filter device, insertion loss can be reduced.
- the mass adding film 28A is provided in a part of the first gap region G1 in the electrode finger extending direction.
- the mass adding film 28A is provided over the entire first gap region G1 in the direction perpendicular to the electrode fingers.
- the mass adding film 28B is provided in a part of the third gap region G3 in the electrode finger extending direction.
- the mass adding film 28B is provided over the entire third gap region G3 in the direction perpendicular to the electrode fingers.
- the mass adding film is provided in at least a portion of at least one of the first gap region G1, the second gap region G2, the third gap region G3, and the fourth gap region. It would be fine if it was.
- the mass adding film 28A may be provided on at least a portion of the first gap region G1 in the electrode finger extending direction and at least a portion in the electrode finger orthogonal direction.
- the mass adding film 28A and the mass adding film 28B only the mass adding film 28A may be provided.
- the mass adding film 28A is provided over the entire first edge region H1.
- the mass adding film 28B is provided over the entire second edge region H2.
- the support member 13 consists of a support substrate 16 and an insulating layer 15.
- the piezoelectric substrate 12 is a laminate of a support substrate 16, an insulating layer 15, and a piezoelectric layer 14. That is, the piezoelectric layer 14 and the support member 13 overlap when viewed from the direction in which the first main surface 14a and the second main surface 14b of the piezoelectric layer 14 face each other.
- the material of the support substrate 16 for example, semiconductors such as silicon, ceramics such as aluminum oxide, etc. can be used.
- semiconductors such as silicon, ceramics such as aluminum oxide, etc.
- an appropriate dielectric material such as silicon oxide or tantalum oxide can be used.
- a recess is provided in the insulating layer 15.
- a piezoelectric layer 14 as a piezoelectric film is provided on the insulating layer 15 so as to close the recess. This forms a hollow section.
- This hollow part is the hollow part 10a.
- the support member 13 and the piezoelectric film are arranged such that a part of the support member 13 and a part of the piezoelectric film face each other with the cavity 10a in between.
- the recess in the support member 13 may be provided across the insulating layer 15 and the support substrate 16.
- the recess provided only in the support substrate 16 may be closed by the insulating layer 15.
- the recess may be provided in the piezoelectric layer 14, for example.
- the cavity 10a may be a through hole provided in the support member 13.
- the cavity 10a is the acoustic reflection part in the present invention.
- the acoustic reflection portion can effectively confine the energy of the elastic wave to the piezoelectric layer 14 side.
- the acoustic reflecting portion may be provided at a position in the support member 13 that overlaps at least a portion of the functional electrode 11 in plan view. More specifically, in plan view, at least a portion of each of the first electrode finger 25, second electrode finger 26, and third electrode finger 27 only needs to overlap with the acoustic reflecting portion. In plan view, it is preferable that the plurality of excitation regions C overlap with the acoustic reflection section.
- the acoustic reflection portion may be an acoustic reflection film such as an acoustic multilayer film, which will be described later.
- an acoustic reflective film may be provided on the surface of the support member.
- the electrode fingers and the mass adding film 28A are stacked in this order from the piezoelectric layer 14 side.
- the mass adding film 28A and the electrode fingers may be stacked in this order from the piezoelectric layer 14 side. The same applies to the portion where the mass adding film 28B and the electrode fingers are laminated.
- the material of the mass adding film 28A and the mass adding film 28B is not limited to silicon oxide. However, it is preferable that at least one dielectric material selected from the group consisting of silicon oxide, tungsten oxide, niobium oxide, tantalum oxide, and hafnium oxide is used as the material for the mass adding film 28A and the mass adding film 28B. . Thereby, when the elastic wave device 10 is used in a filter device, insertion loss can be more reliably reduced.
- the distance between the centers of adjacent electrode fingers is constant. Note that the distance between the centers of adjacent electrode fingers may not be constant. In this case, the distance between the centers of adjacent first electrode fingers 25 and third electrode fingers 27 and the center distance between adjacent second electrode fingers 26 and third electrode fingers 27 is the longest. Let the distance be p. However, as in the first embodiment, when the distance between the centers of adjacent electrode fingers is constant, the distance between the centers of any adjacent electrode fingers is the distance p.
- d/p is preferably 0.5 or less, and more preferably 0.24 or less. Thereby, bulk waves in thickness shear mode are suitably excited. Note that in this embodiment, the thickness d is the thickness of the piezoelectric layer 14.
- the elastic wave device of the present invention does not necessarily have to be configured to be able to utilize thickness-shear mode bulk waves.
- the elastic wave device of the present invention may be configured to be able to utilize plate waves.
- the excitation region is the intersection region E shown in FIG.
- the piezoelectric layer 14 is made of Z-cut LiNbO 3 .
- the piezoelectric layer 14 may be made of rotated Y-cut lithium niobate.
- the fractional band of the acoustic wave device 10 depends on the Euler angles ( ⁇ , ⁇ , ⁇ ) of lithium niobate used in the piezoelectric layer 14.
- the fractional band is expressed by (
- FIG. 5 is a diagram showing a map of the fractional band with respect to the Euler angles (0°, ⁇ , ⁇ ) of LiNbO 3 when d/p is brought as close to 0 as possible.
- the hatched region R in FIG. 5 is the region where a fractional band of at least 2% or more can be obtained.
- the range of region R is approximated, it becomes the range expressed by the following equations (1), (2), and (3). Note that when ⁇ in the Euler angles ( ⁇ , ⁇ , ⁇ ) is within a range of 0° ⁇ 10°, the relationship between ⁇ and ⁇ and the fractional band is the same as the relationship shown in FIG. 5.
- the Euler angle is in the range of the above formula (1), formula (2), or formula (3).
- the fractional band can be made sufficiently wide.
- the elastic wave device 10 can be suitably used as a filter device.
- the second to fifth embodiments will be shown below.
- the second to fifth embodiments differ from the first embodiment in at least one of the positions of the mass adding film 28A and the mass adding film 28B, and the material of the piezoelectric layer 14.
- the piezoelectric layer 14 is made of Z-cut lithium niobate, but in the fourth and fifth embodiments, the piezoelectric layer 14 is made of rotating Made of Y-cut lithium niobate.
- the elastic wave devices of the second to fifth embodiments have the same configuration as the first embodiment.
- the mass adding film 28A and the mass adding film 28B are provided in one of the gap regions. Therefore, similarly to the first embodiment, in the second to fifth embodiments, when the elastic wave device is used as a filter device, the filter device can be made smaller and the insertion loss can be reduced. can do.
- the mass adding film 28A in the gap region where the mass adding film 28A is provided, the mass adding film 28A is provided over the entire gap region in the direction perpendicular to the electrode finger.
- the mass adding film 28B in the gap region where the mass adding film 28B is provided, the mass adding film 28B is provided over the entire gap region in the direction perpendicular to the electrode finger.
- FIG. 6 is a schematic plan view of the elastic wave device according to the second embodiment.
- This embodiment differs from the first embodiment in that the mass adding film 28A is provided over the first edge region H1, the first gap region G1, and the second gap region G2. This embodiment also differs from the first embodiment in that the mass adding film 28B is provided over the second edge region H2, the third gap region G3, and the fourth gap region G4.
- the mass adding film 28A is provided continuously from the first edge region H1 to the second gap region G2 in the electrode finger extending direction. Therefore, the mass adding film 28A overlaps with the connection electrode 24 on the first bus bar 22 side in plan view. The mass adding film 28A is provided over the entire first gap region G1 and second gap region G2 in the electrode finger extending direction.
- the mass adding film 28B is provided continuously from the second edge region H2 to the fourth gap region G4 in the electrode finger extending direction. Therefore, the mass adding film 28B overlaps with the connection electrode 24 on the second bus bar 23 side in plan view.
- the mass adding film 28B is provided over the entire third gap region G3 and fourth gap region G4 in the electrode finger extending direction.
- the transmission characteristics were compared.
- the design parameters of the elastic wave device having the configuration of the second embodiment are as follows. Note that the design parameters are the same as those in the first embodiment for comparison shown in FIG.
- Piezoelectric layer Material... LiNbO3 , Euler angle ( ⁇ , ⁇ , ⁇ )...(0°, 0°, 90°), thickness...400 nm
- First to third electrode fingers Layer structure...Ti layer/AlCu layer/Ti layer from the piezoelectric layer side, thickness of each layer...10nm/390nm/4nm from the piezoelectric layer side The order of the first to third electrode fingers represented by the connected potentials: IN, GND, OUT, GND is repeated. Center-to-center distance between adjacent electrode fingers: 1.4 ⁇ m Duty ratio: 0.3 Dimensions of the first edge region and second edge region along the electrode finger extending direction: 1 ⁇ m Mass addition film thickness: 25nm
- FIG. 7 is a diagram showing the transmission characteristics of the elastic wave devices of the second embodiment and the first comparative example.
- the loss is smaller near the center of the passband and on the low frequency side than in the first comparative example.
- FIG. 8 is a schematic plan view of an elastic wave device according to the third embodiment.
- This embodiment is different from the first embodiment in that the mass adding film 28A is not provided in the first edge region H1, but is provided over the first gap region G1 and the second gap region G2. different from.
- This embodiment is also different from the first embodiment in that the mass adding film 28B is not provided in the second edge region H2, but is provided over the third gap region G3 and the fourth gap region G4. Different from the form.
- the mass adding film 28A is provided continuously in the electrode finger extending direction from the first gap region G1 to the second gap region G2. Therefore, the mass adding film 28A overlaps with the connection electrode 24 on the first bus bar 22 side in plan view.
- the mass adding film 28A is provided over the entire first gap region G1 and second gap region G2 in the electrode finger extending direction.
- the mass adding film 28B is continuously provided in the electrode finger extending direction from the third gap region G3 to the fourth gap region G4. Therefore, the mass adding film 28B overlaps with the connection electrode 24 on the second bus bar 23 side in plan view.
- the mass adding film 28B is provided over the entire third gap region G3 and fourth gap region G4 in the electrode finger extending direction.
- the transmission characteristics were compared.
- the design parameters of the elastic wave device having the configuration of the third embodiment are the same as the design parameters of the first embodiment according to the comparison shown in FIG.
- FIG. 9 is a diagram showing the transmission characteristics of the elastic wave devices of the third embodiment and the first comparative example.
- the loss is smaller near the center of the passband and on the low frequency side than in the first comparative example.
- the fourth embodiment will be described below. Note that in the fourth embodiment, the position of the mass adding film is the same as in the first embodiment shown in FIG. The fourth embodiment differs from the first embodiment in that the piezoelectric layer is made of rotated Y-cut lithium niobate.
- the passage characteristics were compared in the fourth embodiment and the second comparative example.
- the second comparative example differs from the fourth embodiment in that no mass-adding film is provided.
- the piezoelectric layer is made of rotated Y-cut lithium niobate.
- the width of the gap region is a dimension of the gap region along the electrode finger extending direction. In one comparison, the width of the first to fourth gap regions was 1.5 ⁇ m. In the other comparison, the widths of the first to fourth gap regions were 5 ⁇ m.
- the design parameters of the elastic wave device having the configuration of the fourth embodiment are as follows.
- Piezoelectric layer Material... LiNbO3 , Euler angle ( ⁇ , ⁇ , ⁇ )...(0°, 217.5°, 0°), thickness...400 nm
- First to third electrode fingers Layer structure...Ti layer/AlCu layer/Ti layer from the piezoelectric layer side, thickness of each layer...10nm/390nm/4nm from the piezoelectric layer side The order of the first to third electrode fingers represented by the connected potentials: IN, GND, OUT, GND is repeated.
- the second comparative example had the same design parameters as the fourth embodiment, except that no mass-adding film was provided.
- FIG. 10 is a diagram showing the transmission characteristics when the widths of the first to fourth gap regions are 1.5 ⁇ m in the elastic wave devices of the fourth embodiment and the second comparative example.
- FIG. 11 is a diagram showing the transmission characteristics when the widths of the first to fourth gap regions are 5 ⁇ m in the elastic wave devices of the fourth embodiment and the second comparative example.
- the width of the first to fourth gap regions is 1.5 ⁇ m
- the width of the passband is higher and lower than in the second comparative example. On the area side, losses can be reduced.
- the narrow widths of the first to fourth gap regions further reduce ripples in the passband. It turns out that it can be suppressed.
- the fifth embodiment will be described below. Note that in the fifth embodiment, the position of the mass adding film is the same as in the second embodiment shown in FIG.
- the fifth embodiment differs from the second embodiment in that the piezoelectric layer is made of rotated Y-cut lithium niobate.
- Passage characteristics were compared in the fifth embodiment and the second comparative example. Note that in this comparison, two widths were used for the first to fourth gap regions. In one comparison, the width of the first to fourth gap regions was 1.5 ⁇ m. In the other comparison, the widths of the first to fourth gap regions were 5 ⁇ m.
- the design parameters of the elastic wave device having the configuration of the fifth embodiment are the same as the design parameters of the fourth embodiment according to the comparison shown in FIGS. 10 and 11.
- FIG. 12 is a diagram showing the transmission characteristics when the widths of the first to fourth gap regions are 1.5 ⁇ m in the elastic wave devices of the fifth embodiment and the second comparative example.
- FIG. 13 is a diagram showing the transmission characteristics when the widths of the first to fourth gap regions are 5 ⁇ m in the elastic wave devices of the fifth embodiment and the second comparative example.
- the narrow width of the first to fourth gap regions further reduces ripples in the passband. It turns out that it can be suppressed.
- the third electrode 19 has a meandering shape. Some of all the connection electrodes 24 in the third electrode 19 are provided between the tips of the second electrode fingers 26 and the first bus bar 22 . The remaining plurality of connection electrodes 24 are provided between the tips of the plurality of first electrode fingers 25 and the second bus bar 23 .
- the third electrode 19 does not have to have a meandering shape.
- the connection electrode 24 may be provided at least between the tips of the plurality of second electrode fingers 26 and the first bus bar 22 . Note that if the connection electrode 24 is not provided between the tips of the plurality of first electrode fingers 25 and the second bus bar 23, the third gap region G3 and the fourth gap region are not formed. .
- a sixth embodiment shows an example in which the third electrode 19 does not have a meandering shape.
- FIG. 14 is a schematic plan view of an elastic wave device according to the sixth embodiment.
- This embodiment differs from the first embodiment in the configuration of the third electrode 39.
- This embodiment also differs from the first embodiment in that the third gap region G3 and the fourth gap region G4 are not formed, but the fifth gap region G5 is formed. Therefore, this embodiment differs from the first embodiment also in the position of the mass adding film.
- the elastic wave device of this embodiment has the same configuration as the elastic wave device 10 of the first embodiment.
- the connection electrode is the third bus bar 34.
- the third bus bar 34 serving as a connection electrode for the third electrode 39 electrically connects the plurality of third electrode fingers 27 to each other.
- the third bus bar 34 is located in a region between the first bus bar 22 and the tips of the plurality of second electrode fingers 26.
- a plurality of first electrode fingers 25 are also located in this region.
- the third bus bar 34 and the plurality of first electrode fingers 25 are electrically insulated from each other by the insulating film 37.
- the third bus bar 34 includes a plurality of first connection electrodes 34A and one second connection electrode 34B.
- Each first connection electrode 34A connects the tips of two adjacent third electrode fingers 27 to each other.
- the first connection electrode 34A and the two third electrode fingers 27 constitute a U-shaped electrode.
- a second connection electrode 34B connects the plurality of first connection electrodes 34A.
- An insulating film 37 is provided between the second connection electrode 34B and the plurality of first electrode fingers 25.
- an insulating film 37 is provided on the first main surface 14a of the piezoelectric layer 14 so as to partially cover the plurality of first electrode fingers 25.
- the insulating film 37 is provided in a region between the first bus bar 22 and the tips of the plurality of second electrode fingers 26.
- the insulating film 37 has a band-like shape.
- the insulating film 37 does not reach onto the first connection electrode 34A of the third electrode 39.
- a second connection electrode 34B is provided over the insulating film 37 and over the plurality of first connection electrodes 34A. More specifically, the second connection electrode 34B has a bar portion 34a and a plurality of protrusions 34b. Each protrusion 34b extends from the bar portion 34a toward each first connection electrode 34A. Each protrusion 34b is connected to each first connection electrode 34A. Thereby, the plurality of third electrode fingers 27 are electrically connected to each other by the first connection electrode 34A and the second connection electrode 34B.
- the third bus bar 34 is located in a region between the first bus bar 22 and the tips of the plurality of second electrode fingers 26. Therefore, the tips of the plurality of second electrode fingers 26 each face the third bus bar 34 across a gap in the electrode finger extending direction. On the other hand, the tips of the plurality of first electrode fingers 25 each face the second bus bar 23 across a gap in the direction in which the electrode fingers extend.
- the region located between the tips of the plurality of first electrode fingers 25 and the second bus bar 23 in the electrode finger extending direction and extending in the direction perpendicular to the electrode fingers is the fifth gap. This is area G5.
- the fifth gap region G5 is adjacent to the second edge region H2.
- first gap region G1 and the second gap region G2 are configured similarly to the first embodiment. Specifically, when viewed in plan, it is located between the tips of the plurality of second electrode fingers 26 and the third bus bar 34 serving as a connection electrode in the direction in which the electrode fingers extend, and in the direction perpendicular to the electrode fingers.
- the extending region is the first gap region G1.
- a region located between the third bus bar 34 and the first bus bar 22 and extending in a direction perpendicular to the electrode fingers is the second gap region G2.
- the fifth gap region G5 and other gap regions may be simply referred to as a gap region.
- the fifth gap region G5 and the third gap region G3 and fourth gap region G4 shown in FIG. 2 are the same in the following points. These regions are located between the tips of the plurality of first electrode fingers 25 and the second bus bar 23, do not include connection electrodes, and extend in a direction perpendicular to the electrode fingers.
- the mass adding film 28A is provided over the first gap region G1 and the first edge region H1.
- the mass adding film 28B is provided across the fifth gap region G5 and the second edge region H2.
- the feature of this embodiment is that it has the following configuration. 1) In plan view, the third electrode finger of the third electrode 19 is located between the first electrode finger 25 of the first comb-shaped electrode 17 and the second electrode finger 26 of the second comb-shaped electrode 18. 27 shall be provided. 2) The mass adding film 28A and the mass adding film 28B are provided in the first gap region G1 and the fifth gap region G5.
- the mass adding film may be provided in at least a portion of at least one of the first gap region G1, the second gap region G2, and the fifth gap region G5.
- the filter device when the elastic wave device is used as a filter device, the filter device can be made smaller and the insertion loss can be reduced.
- the mass adding film 28A and the mass adding film 28B have a band-like shape.
- the mass-adding film 28A and the mass-adding film 28B overlap with the plurality of first electrode fingers 25, the plurality of second electrode fingers 26, and the plurality of third electrode fingers 27, respectively, when viewed from the electrode finger extension direction.
- the shape of the mass-adding membrane is not limited to a band-like shape. Examples in which the shape of the mass-adding film is not a band-like shape are shown in the seventh to tenth embodiments.
- the seventh embodiment and the eighth embodiment differ from the first embodiment only in the position of the mass adding film.
- the mass adding film is formed in at least one of the first gap region G1, the second gap region G2, the third gap region G3, and the fourth gap region G4. It is provided in at least a part of either.
- the ninth embodiment and the tenth embodiment differ from the sixth embodiment only in the position of the mass adding film.
- the mass adding film covers at least a portion of at least one of the first gap region G1, the second gap region G2, and the fifth gap region G5. It is set in.
- the filter device when the elastic wave device is used as a filter device, the filter device can be miniaturized, and Insertion loss can be reduced.
- FIG. 15 is a schematic plan view of the elastic wave device according to the seventh embodiment.
- This embodiment differs from the first embodiment in the positions of the mass adding film 48A and the mass adding film 48B.
- the elastic wave device of this embodiment has the same configuration as the elastic wave device 10 of the first embodiment.
- a first gap region G1, a second gap region G2, a third gap region G3, and a fourth gap region G4 are configured.
- a plurality of mass adding films 48A are provided across the first gap region G1 and the first edge region H1.
- the plurality of mass adding films 48A are arranged in a direction perpendicular to the electrode fingers.
- the mass adding film 48A is not provided in the second gap region G2.
- Each mass-adding film 48A overlaps with one electrode finger among the plurality of electrode fingers when viewed from the direction in which the electrode fingers extend.
- Each mass-adding film 48A overlaps one second electrode finger 26 in plan view. Note that the mass adding film 48A may overlap the first electrode finger 25 or the third electrode finger 27 in plan view.
- a plurality of mass adding films 48B are provided across the third gap region G3 and the second edge region H2.
- the plurality of mass adding films 48B are arranged in a direction perpendicular to the electrode fingers.
- the mass adding film 48B is not provided in the fourth gap region G4.
- Each mass-adding film 48B overlaps with one electrode finger among the plurality of electrode fingers when viewed from the direction in which the electrode fingers extend. Each mass-adding film 48B overlaps one first electrode finger 25 in plan view. Note that the mass adding film 48B may overlap the second electrode finger 26 or the third electrode finger 27 in plan view.
- FIG. 16 is a schematic plan view of an elastic wave device according to the eighth embodiment.
- This embodiment differs from the seventh embodiment in that the mass adding film 48A is provided over the first edge region H1, the first gap region G1, and the second gap region G2.
- This embodiment also differs from the seventh embodiment in that the mass adding film 48B is provided over the second edge region H2, the third gap region G3, and the fourth gap region G4.
- the elastic wave device of this embodiment has the same configuration as the elastic wave device of the seventh embodiment.
- the mass adding film 48A is provided continuously from the first edge region H1 to the second gap region G2 in the electrode finger extending direction.
- the mass adding film 48A overlaps with the connection electrode 24 on the first bus bar 22 side in plan view.
- the mass adding film 48A is provided over the entire first gap region G1 and second gap region G2 in the electrode finger extending direction.
- the mass adding film 48B is provided continuously from the second edge region H2 to the fourth gap region G4 in the electrode finger extending direction.
- the mass adding film 48B overlaps with the connection electrode 24 on the second bus bar 23 side in plan view.
- the mass adding film 48B is provided over the entire third gap region G3 and fourth gap region G4 in the electrode finger extending direction.
- FIG. 17 is a schematic plan view of the elastic wave device according to the ninth embodiment.
- This embodiment differs from the sixth embodiment in the positions of the mass adding film 48A and the mass adding film 48B.
- the elastic wave device of this embodiment has the same configuration as the elastic wave device of the sixth embodiment.
- a first gap region G1, a second gap region G2, and a fifth gap region G5 are configured.
- a plurality of mass adding films 48A are provided across the first gap region G1 and the first edge region H1.
- the plurality of mass adding films 48A are arranged in a direction perpendicular to the electrode fingers.
- the mass adding film 48A is not provided in the second gap region G2.
- Each mass-adding film 48A overlaps with one electrode finger among the plurality of electrode fingers when viewed from the direction in which the electrode fingers extend.
- Each mass-adding film 48A overlaps one second electrode finger 26 in plan view. Note that the mass adding film 48A may overlap the first electrode finger 25 or the third electrode finger 27 in plan view.
- a plurality of mass adding films 48B are provided across the fifth gap region G5 and the second edge region H2.
- the plurality of mass adding films 48A are arranged in a direction perpendicular to the electrode fingers.
- Each mass-adding film 48B overlaps with one electrode finger among the plurality of electrode fingers when viewed from the direction in which the electrode fingers extend. Some of the plurality of mass adding films 48B each overlap one first electrode finger 25 in plan view. Each of the remaining mass adding films 48B overlaps one third electrode finger 27 in plan view. Note that the mass adding film 48B may overlap the second electrode finger 26 in plan view.
- FIG. 18 is a schematic plan view of the elastic wave device according to the tenth embodiment.
- This embodiment differs from the ninth embodiment in that the mass adding film 48A is provided over the first edge region H1, the first gap region G1, and the second gap region G2.
- the elastic wave device of this embodiment has the same configuration as the elastic wave device of the ninth embodiment.
- the mass adding film 48A is provided continuously from the first edge region H1 to the second gap region G2 in the electrode finger extending direction.
- the mass adding film 48A overlaps with the connection electrode 24 on the first bus bar 22 side in plan view.
- the mass adding film 48A is provided over the entire first gap region G1 and second gap region G2 in the electrode finger extending direction.
- FIG. 19 is a schematic plan view of the first elastic wave resonator in the eleventh embodiment.
- FIG. 20 is a schematic front sectional view showing the vicinity of the first to third electrode fingers in the eleventh embodiment.
- this embodiment differs from the sixth embodiment in that the third electrode 39 is provided on the second main surface 14b of the piezoelectric layer 14.
- the elastic wave device of this embodiment has the same configuration as the elastic wave device of the sixth embodiment.
- the arrangement of the third electrode 39 in this embodiment in plan view is the same as that in the sixth embodiment. Therefore, when viewed in plan, the plurality of third electrodes are aligned with the first electrode fingers 25 and the second electrode fingers 26 in the direction in which the first electrode fingers 25 and the second electrode fingers 26 are lined up. Each finger 27 is provided on the second main surface 14b of the piezoelectric layer 14.
- the order in which the plurality of electrode fingers are arranged is as follows: starting from the first electrode finger 25, the first electrode finger 25, the third electrode finger 27, the second electrode finger 26, and the third electrode finger 25. This is the order in which the electrode fingers 27 constitute one period.
- each gap region can be defined similarly to the sixth embodiment.
- the region located between the tips of the plurality of second electrode fingers 26 and the third bus bar 34 as a connection electrode and extending in the direction perpendicular to the electrode fingers is the third bus bar 34 .
- 1 gap region G1 When viewed in plan, a region located between the third bus bar 34 and the first bus bar 22 and extending in a direction perpendicular to the electrode fingers is the second gap region G2.
- the region located between the tips of the plurality of first electrode fingers 25 and the second bus bar 23 in the electrode finger extending direction and extending in the direction perpendicular to the electrode fingers is the fifth gap. This is area G5.
- the mass adding film 28A is provided over the first gap region G1 and the first edge region H1.
- the mass adding film 28B is provided over the fifth gap region G5 and the second edge region H2.
- the configuration in which the third electrode 39 is provided on the second main surface 14b of the piezoelectric layer 14 can also be applied to other forms of the present invention.
- a third electrode 19 similar to that in the first embodiment shown in FIG. 2 may be provided on the second main surface 14b.
- a first gap region G1, a second gap region G2, a third gap region G3, and a fourth gap region G4 are defined.
- a through hole may be provided in the gap region.
- the mass adding membrane may not be provided. An example of this is shown below.
- FIG. 21 is a schematic plan view of an elastic wave device according to the twelfth embodiment. Note that in FIG. 21, the electrodes and the piezoelectric layer 14 are shown with hatching. Similarly, in schematic plan views other than those shown in FIG. 21, the electrodes and the piezoelectric layer 14 may be hatched.
- the elastic wave device 50 is an acoustic coupling filter.
- the elastic wave device 50 includes a piezoelectric substrate 12 and a functional electrode 11 similar to the first embodiment.
- the elastic wave device 50 includes a first gap region G1, a second gap region G2, a third gap region G3, and a fourth gap region G4.
- the elastic wave device 50 has a plurality of excitation regions C and an intersection region E, similarly to the first embodiment.
- the elastic wave device 50 is configured to be able to utilize a thickness shear mode.
- the elastic wave device 50 may be configured to utilize plate waves.
- the piezoelectric layer 14 is made of Z-cut lithium niobate. However, the piezoelectric layer 14 may be made of rotated Y-cut lithium niobate.
- a plurality of through holes 54c are provided in the piezoelectric layer 14 as a piezoelectric film.
- some of the through holes 54c are located in the first gap region G1. More specifically, in the first gap region G1, the through holes 54c are located in all parts where the first electrode fingers 25, the second electrode fingers 26, and the third electrode fingers 27 are not provided. ing.
- the remaining through holes 54c are located in the third gap region G3.
- the through holes 54c are located in all parts where the first electrode fingers 25, the second electrode fingers 26, and the third electrode fingers 27 are not provided. Note that when the piezoelectric film is a laminated film including the piezoelectric layer 14, the through hole 54c only needs to penetrate the laminated film.
- the feature of this embodiment is that it has the following configuration. 1) In plan view, the third electrode finger of the third electrode 19 is located between the first electrode finger 25 of the first comb-shaped electrode 17 and the second electrode finger 26 of the second comb-shaped electrode 18. 27 shall be provided. 2) In the first gap region G1 and the third gap region G3, a through hole 54c is provided in the piezoelectric layer 14 as a piezoelectric film. 3) When viewed from above, in the area where the through hole 54c is provided, all the parts where the first electrode finger 25, the second electrode finger 26, and the third electrode finger 27 are not provided are provided with a through hole. The hole 54c is located.
- the piezoelectric layer 14 is provided with the through hole 54c in at least one of the first gap region G1, the second gap region G2, the third gap region G3, and the fourth gap region G4.
- the through-holes 54c may be located in all areas where the electrode fingers are not provided in the area where the through-holes 54c are provided.
- the first comparative example differs from the twelfth embodiment in that no through holes are provided in the piezoelectric layer.
- the piezoelectric layer is made of Z-cut lithium niobate. Passage characteristics were compared in the twelfth embodiment and the first comparative example.
- the design parameters of the elastic wave device 50 having the configuration of the twelfth embodiment are as follows.
- Piezoelectric layer Material... LiNbO3 , Euler angle ( ⁇ , ⁇ , ⁇ )...(0°, 0°, 90°), thickness...400 nm
- First to third electrode fingers Layer structure...Ti layer/AlCu layer/Ti layer from the piezoelectric layer side, thickness of each layer...10nm/390nm/4nm from the piezoelectric layer side The order of the first to third electrode fingers represented by the connected potentials: IN, GND, OUT, GND is repeated. Center-to-center distance between adjacent electrode fingers: 1.4 ⁇ m Duty ratio: 0.3
- the first comparative example had the same design parameters as the twelfth embodiment, except that no through holes were provided.
- FIG. 22 is a diagram showing the transmission characteristics of the elastic wave devices of the twelfth embodiment and the first comparative example.
- a filter waveform can be suitably obtained also in the single elastic wave device 50 according to the twelfth embodiment. Therefore, when the elastic wave device 50 is used as a filter device, a filter waveform can be suitably obtained even with a small number of elastic wave resonators configuring the filter device. Therefore, the filter device can be made smaller.
- the loss is smaller near the center of the passband and on the low frequency side than in the first comparative example. Therefore, when the elastic wave device 50 is used in a filter device, insertion loss can be reduced.
- the filter device when used as a filter device, the filter device can be made smaller and the insertion loss can be reduced. Can be made smaller.
- FIG. 23 is a schematic plan view of an elastic wave device according to the thirteenth embodiment.
- a plurality of through holes 54c are provided in the piezoelectric layer 14 as a piezoelectric film in the second gap region G2 and the fourth gap region G4.
- the piezoelectric layer 14 is not provided with through holes 54c in the first gap region G1 and the third gap region G3.
- the through holes 54c are located in all parts where electrode fingers are not provided.
- FIG. 24 is a schematic plan view of an elastic wave device according to the fourteenth embodiment.
- a plurality of through holes 54c are provided in the piezoelectric layer 14 as a piezoelectric film in the first gap region G1, the second gap region G2, the third gap region G3, and the fourth gap region G4. ing.
- the through holes 54c are located in all parts where electrode fingers are not provided.
- the transmission characteristics were compared.
- the design parameters of the elastic wave device having the configuration of this embodiment are the same as the design parameters of the twelfth embodiment according to the comparison shown in FIG.
- FIG. 25 is a diagram showing the transmission characteristics of the elastic wave devices of the fourteenth embodiment and the first comparative example.
- the loss is smaller near the center of the passband and on the low frequency side than in the first comparative example.
- the configuration in which the through holes are provided in the gap regions can be applied even when the gap regions are the first gap region G1, the second gap region G2, and the fifth gap region G5.
- An example of this is illustrated by the fifteenth embodiment.
- FIG. 26 is a schematic plan view of an elastic wave device according to the fifteenth embodiment.
- the functional electrode is configured similarly to the sixth embodiment.
- the third gap region G3 and the fourth gap region G4 are not configured.
- a first gap region G1, a second gap region G2, and a fifth gap region G5 are configured.
- the feature of this embodiment is that it has the following configuration. 1) In plan view, the third electrode finger of the third electrode 19 is located between the first electrode finger 25 of the first comb-shaped electrode 17 and the second electrode finger 26 of the second comb-shaped electrode 18. 27 shall be provided. 2) In the first gap region G1 and the fifth gap region G5, a through hole 54c is provided in the piezoelectric layer 14 as a piezoelectric film. 3) When viewed from above, in the area where the through hole 54c is provided, all the parts where the first electrode finger 25, the second electrode finger 26, and the third electrode finger 27 are not provided are provided with a through hole. The hole 54c is located.
- the through hole 54c may be provided in the piezoelectric layer 14 as a piezoelectric film in at least one of the first gap region G1, the second gap region G2, and the fifth gap region G5.
- the through-holes 54c may be located in all areas where the electrode fingers are not provided in the area where the through-holes 54c are provided.
- the functional electrode is an IDT electrode.
- the IDT electrode does not have a third electrode finger.
- the "electrode" in the IDT electrode described below corresponds to an electrode finger.
- the support member in the following examples corresponds to the support substrate in the present invention.
- the reference potential may be referred to as ground potential.
- FIG. 27(a) is a schematic perspective view showing the external appearance of an elastic wave device that utilizes thickness-shear mode bulk waves
- FIG. 27(b) is a plan view showing the electrode structure on the piezoelectric layer.
- FIG. 28 is a cross-sectional view of a portion taken along line AA in FIG. 27(a).
- the acoustic wave device 1 has a piezoelectric layer 2 made of LiNbO 3 .
- the piezoelectric layer 2 may be made of LiTaO 3 .
- the cut angle of LiNbO 3 and LiTaO 3 is a Z cut, it may be a rotational Y cut or an X cut.
- the thickness of the piezoelectric layer 2 is not particularly limited, but in order to effectively excite the thickness shear mode, it is preferably 40 nm or more and 1000 nm or less, more preferably 50 nm or more and 1000 nm or less.
- the piezoelectric layer 2 has first and second main surfaces 2a and 2b facing each other. An electrode 3 and an electrode 4 are provided on the first main surface 2a.
- electrode 3 is an example of a "first electrode”
- electrode 4 is an example of a "second electrode”.
- a plurality of electrodes 3 are connected to the first bus bar 5.
- the plurality of electrodes 4 are connected to a second bus bar 6.
- the plurality of electrodes 3 and the plurality of electrodes 4 are interposed with each other.
- Electrode 3 and electrode 4 have a rectangular shape and have a length direction.
- the electrode 3 and the adjacent electrode 4 face each other in a direction perpendicular to this length direction.
- the length direction of the electrodes 3 and 4 and the direction perpendicular to the length direction of the electrodes 3 and 4 are both directions that intersect with the thickness direction of the piezoelectric layer 2.
- the electrode 3 and the adjacent electrode 4 face each other in the direction intersecting the thickness direction of the piezoelectric layer 2.
- the length direction of the electrodes 3 and 4 may be replaced with the direction perpendicular to the length direction of the electrodes 3 and 4 shown in FIGS. 27(a) and 27(b). That is, in FIGS. 27(a) and 27(b), the electrodes 3 and 4 may extend in the direction in which the first bus bar 5 and the second bus bar 6 extend. In that case, the first bus bar 5 and the second bus bar 6 will extend in the direction in which the electrodes 3 and 4 extend in FIGS. 27(a) and 27(b).
- Electrode 3 and electrode 4 are adjacent does not mean that electrode 3 and electrode 4 are arranged so as to be in direct contact with each other, but when electrode 3 and electrode 4 are arranged with a gap between them. refers to Further, when the electrode 3 and the electrode 4 are adjacent to each other, no electrode connected to the hot electrode or the ground electrode, including the other electrodes 3 and 4, is arranged between the electrode 3 and the electrode 4. This logarithm does not need to be an integer pair, and may be 1.5 pairs, 2.5 pairs, or the like.
- the center-to-center distance between the electrodes 3 and 4, that is, the pitch, is preferably in the range of 1 ⁇ m or more and 10 ⁇ m or less.
- the width of the electrodes 3 and 4, that is, the dimension in the opposing direction of the electrodes 3 and 4 is preferably in the range of 50 nm or more and 1000 nm or less, and more preferably in the range of 150 nm or more and 1000 nm or less.
- the distance between the centers of the electrodes 3 and 4 refers to the distance between the center of the dimension (width dimension) of the electrode 3 in the direction orthogonal to the length direction of the electrode 3 and the center of the dimension (width dimension) of the electrode 4 in the direction orthogonal to the length direction of the electrode 4. This is the distance between the center of the dimension (width dimension).
- the direction perpendicular to the length direction of the electrodes 3 and 4 is the direction perpendicular to the polarization direction of the piezoelectric layer 2. This is not the case when a piezoelectric material having a different cut angle is used as the piezoelectric layer 2.
- “orthogonal” is not limited to strictly orthogonal, but approximately orthogonal (for example, the angle between the direction orthogonal to the length direction of the electrodes 3 and 4 and the polarization direction is 90° ⁇ 10°). (within range).
- a support member 8 is laminated on the second main surface 2b side of the piezoelectric layer 2 with an insulating layer 7 in between.
- the insulating layer 7 and the support member 8 have a frame-like shape, and have through holes 7a and 8a as shown in FIG. Thereby, a cavity 9 is formed.
- the cavity 9 is provided so as not to hinder the vibration of the excitation region C of the piezoelectric layer 2. Therefore, the support member 8 is laminated on the second main surface 2b with the insulating layer 7 in between, at a position that does not overlap with the portion where at least one pair of electrodes 3 and 4 are provided. Note that the insulating layer 7 may not be provided. Therefore, the support member 8 can be laminated directly or indirectly on the second main surface 2b of the piezoelectric layer 2.
- the insulating layer 7 is made of silicon oxide. However, other than silicon oxide, an appropriate insulating material such as silicon oxynitride or alumina can be used.
- the support member 8 is made of Si. The plane orientation of the Si surface on the piezoelectric layer 2 side may be (100), (110), or (111). It is desirable that the Si constituting the support member 8 has a high resistivity of 4 k ⁇ cm or more. However, the support member 8 can also be constructed using an appropriate insulating material or semiconductor material.
- Examples of materials for the support member 8 include aluminum oxide, lithium tantalate, lithium niobate, piezoelectric materials such as crystal, alumina, magnesia, sapphire, silicon nitride, aluminum nitride, silicon carbide, zirconia, cordierite, mullite, and star.
- Various ceramics such as tite and forsterite, dielectrics such as diamond and glass, semiconductors such as gallium nitride, etc. can be used.
- the plurality of electrodes 3 and 4 and the first and second bus bars 5 and 6 are made of a suitable metal or alloy such as Al or AlCu alloy.
- the electrodes 3 and 4 and the first and second bus bars 5 and 6 have a structure in which an Al film is laminated on a Ti film. Note that an adhesive layer other than the Ti film may be used.
- an AC voltage is applied between the plurality of electrodes 3 and the plurality of electrodes 4. More specifically, an AC voltage is applied between the first bus bar 5 and the second bus bar 6. Thereby, it is possible to obtain resonance characteristics using the thickness shear mode bulk wave excited in the piezoelectric layer 2.
- d/p is 0. It is considered to be 5 or less. Therefore, the bulk wave in the thickness shear mode is effectively excited, and good resonance characteristics can be obtained. More preferably, d/p is 0.24 or less, in which case even better resonance characteristics can be obtained.
- the elastic wave device 1 Since the elastic wave device 1 has the above-mentioned configuration, even if the logarithm of the electrodes 3 and 4 is reduced in an attempt to downsize the device, the Q value is unlikely to decrease. This is because even if the number of electrode fingers in the reflectors on both sides is reduced, the propagation loss is small. Furthermore, the number of electrode fingers can be reduced because the bulk waves in the thickness shear mode are used. The difference between the Lamb wave used in the elastic wave device and the thickness-shear mode bulk wave will be explained with reference to FIGS. 29(a) and 29(b).
- FIG. 29(a) is a schematic front cross-sectional view for explaining a Lamb wave propagating through a piezoelectric film of an acoustic wave device as described in Japanese Patent Publication No. 2012-257019.
- waves propagate through the piezoelectric film 201 as indicated by arrows.
- the first main surface 201a and the second main surface 201b are opposite to each other, and the thickness direction connecting the first main surface 201a and the second main surface 201b is the Z direction. It is.
- the X direction is the direction in which the electrode fingers of the IDT electrodes are lined up.
- the Lamb wave the wave propagates in the X direction as shown.
- the piezoelectric film 201 vibrates as a whole, but since the wave propagates in the X direction, reflectors are placed on both sides to obtain resonance characteristics. Therefore, wave propagation loss occurs, and when miniaturization is attempted, that is, when the number of logarithms of electrode fingers is reduced, the Q value decreases.
- the vibration displacement is in the thickness-slip direction, so the waves are generated between the first principal surface 2a and the second principal surface of the piezoelectric layer 2.
- 2b that is, the Z direction, and resonates. That is, the X-direction component of the wave is significantly smaller than the Z-direction component. Since resonance characteristics are obtained by the propagation of waves in the Z direction, propagation loss is unlikely to occur even if the number of electrode fingers of the reflector is reduced. Furthermore, even if the number of pairs of electrodes 3 and 4 is reduced in an attempt to promote miniaturization, the Q value is unlikely to decrease.
- FIG. 30 schematically shows a bulk wave when a voltage is applied between electrode 3 and electrode 4 such that electrode 4 has a higher potential than electrode 3.
- the first region 451 is a region of the excitation region C between a virtual plane VP1 that is perpendicular to the thickness direction of the piezoelectric layer 2 and bisects the piezoelectric layer 2, and the first main surface 2a.
- the second region 452 is a region of the excitation region C between the virtual plane VP1 and the second principal surface 2b.
- the elastic wave device 1 As mentioned above, in the elastic wave device 1, at least one pair of electrodes consisting of the electrode 3 and the electrode 4 are arranged, but since the wave is not propagated in the X direction, the elastic wave device 1 is made up of the electrodes 3 and 4. There is no need for a plurality of pairs of electrodes. That is, it is only necessary that at least one pair of electrodes be provided.
- the electrode 3 is an electrode connected to a hot potential
- the electrode 4 is an electrode connected to a ground potential.
- the electrode 3 may be connected to the ground potential and the electrode 4 may be connected to the hot potential.
- at least one pair of electrodes is an electrode connected to a hot potential or an electrode connected to a ground potential, as described above, and no floating electrode is provided.
- FIG. 31 is a diagram showing the resonance characteristics of the elastic wave device shown in FIG. 28. Note that the design parameters of the elastic wave device 1 that obtained this resonance characteristic are as follows.
- Insulating layer 7 silicon oxide film with a thickness of 1 ⁇ m.
- Support member 8 Si.
- the length of the excitation region C is a dimension along the length direction of the electrodes 3 and 4 of the excitation region C.
- the distances between the electrode pairs made up of the electrodes 3 and 4 were all equal in multiple pairs. That is, the electrodes 3 and 4 were arranged at equal pitches.
- d/p is 0.5 or less, as described above. Preferably it is 0.24 or less. This will be explained with reference to FIG. 32.
- FIG. 32 is a diagram showing the relationship between this d/p and the fractional band of the resonator of the elastic wave device.
- FIG. 33 is a plan view of an elastic wave device that utilizes bulk waves in thickness-shear mode.
- a pair of electrodes including an electrode 3 and an electrode 4 are provided on the first main surface 2a of the piezoelectric layer 2.
- K in FIG. 33 is the crossover width.
- the number of pairs of electrodes may be one. Even in this case, if the above-mentioned d/p is 0.5 or less, bulk waves in the thickness shear mode can be excited effectively.
- the above-mentioned adjacent to the excitation region C which is a region where any of the adjacent electrodes 3, 4 overlap when viewed in the opposing direction.
- the metallization ratio MR of the matching electrodes 3 and 4 satisfies MR ⁇ 1.75(d/p)+0.075. In that case, spurious can be effectively reduced. This will be explained with reference to FIGS. 34 and 35.
- FIG. 34 is a reference diagram showing an example of the resonance characteristics of the elastic wave device 1.
- the metallization ratio MR will be explained with reference to FIG. 27(b).
- the excitation region C is a region where electrode 3 overlaps electrode 4 when electrode 3 and electrode 4 are viewed in a direction perpendicular to the length direction of electrodes 3 and 4, that is, in a direction in which they face each other. 3, and a region between electrodes 3 and 4 where electrodes 3 and 4 overlap.
- the metallization ratio MR is the ratio of the area of the metallized portion to the area of the excitation region C.
- MR may be the ratio of the metallized portion included in all the excitation regions to the total area of the excitation regions.
- FIG. 35 shows the relationship between the fractional band and the amount of phase rotation of the spurious impedance normalized by 180 degrees as the magnitude of the spurious when a large number of elastic wave resonators are configured according to the configuration of the elastic wave device 1.
- the spurious is as large as 1.0.
- the fractional band exceeds 0.17, that is, exceeds 17%, a large spurious with a spurious level of 1 or more will affect the pass band even if the parameters that make up the fractional band are changed. Appear within. That is, as in the resonance characteristics shown in FIG. 34, a large spurious signal indicated by arrow B appears within the band. Therefore, it is preferable that the fractional band is 17% or less. In this case, by adjusting the thickness of the piezoelectric layer 2, the dimensions of the electrodes 3 and 4, etc., the spurious can be reduced.
- FIG. 36 is a diagram showing the relationship between d/2p, metallization ratio MR, and fractional band.
- various elastic wave devices having different d/2p and MR were constructed and the fractional bands were measured.
- the hatched area on the right side of the broken line D in FIG. 36 is a region where the fractional band is 17% or less.
- the fractional band can be reliably set to 17% or less.
- FIG. 37 is a diagram showing a map of fractional bands with respect to Euler angles (0°, ⁇ , ⁇ ) of LiNbO 3 when d/p is brought as close to 0 as possible.
- a plurality of hatched regions R shown in FIG. 37 are regions where a fractional band of 2% or more can be obtained. Note that when ⁇ in the Euler angles ( ⁇ , ⁇ , ⁇ ) is within the range of 0° ⁇ 5°, the relationship between ⁇ and ⁇ and the fractional band is the same as the relationship shown in FIG. 37.
- ⁇ in the Euler angles ( ⁇ , ⁇ , ⁇ ) of lithium niobate or lithium tantalate constituting the piezoelectric layer is within the range of 0° ⁇ 5°, and ⁇ and ⁇ are If it is within any of the ranges R, the ratio band can be made sufficiently wide, which is preferable.
- FIG. 38 is a front sectional view of an acoustic wave device having an acoustic multilayer film.
- an acoustic multilayer film 82 is laminated on the second main surface 2b of the piezoelectric layer 2.
- the acoustic multilayer film 82 has a laminated structure of low acoustic impedance layers 82a, 82c, 82e with relatively low acoustic impedance and high acoustic impedance layers 82b, 82d with relatively high acoustic impedance.
- the bulk wave in the thickness shear mode can be confined within the piezoelectric layer 2 without using the cavity 9 in the acoustic wave device 1.
- the elastic wave device 81 by setting the above-mentioned d/p to 0.5 or less, resonance characteristics based on a bulk wave in the thickness shear mode can be obtained.
- the number of laminated low acoustic impedance layers 82a, 82c, 82e and high acoustic impedance layers 82b, 82d is not particularly limited. It is sufficient that at least one high acoustic impedance layer 82b, 82d is disposed farther from the piezoelectric layer 2 than the low acoustic impedance layer 82a, 82c, 82e.
- the low acoustic impedance layers 82a, 82c, 82e and the high acoustic impedance layers 82b, 82d can be made of any appropriate material as long as the above acoustic impedance relationship is satisfied.
- examples of the material for the low acoustic impedance layers 82a, 82c, and 82e include silicon oxide and silicon oxynitride.
- examples of the material for the high acoustic impedance layers 82b and 82d include alumina, silicon nitride, and metal.
- FIG. 39 is a partially cutaway perspective view for explaining an elastic wave device that utilizes Lamb waves.
- the elastic wave device 91 has a support substrate 92.
- the support substrate 92 is provided with an open recess on the upper surface.
- a piezoelectric layer 93 is laminated on the support substrate 92 .
- An IDT electrode 94 is provided on the piezoelectric layer 93 above the cavity 9 .
- Reflectors 95 and 96 are provided on both sides of the IDT electrode 94 in the elastic wave propagation direction.
- the outer periphery of the cavity 9 is indicated by a broken line.
- the IDT electrode 94 includes first and second bus bars 94a and 94b, a plurality of first electrode fingers 94c, and a plurality of second electrode fingers 94d.
- the plurality of first electrode fingers 94c are connected to the first bus bar 94a.
- the plurality of second electrode fingers 94d are connected to the second bus bar 94b.
- the plurality of first electrode fingers 94c and the plurality of second electrode fingers 94d are inserted into each other.
- the elastic wave device 91 by applying an alternating current electric field to the IDT electrode 94 on the cavity 9, a Lamb wave as a plate wave is excited. Since the reflectors 95 and 96 are provided on both sides, the resonance characteristic due to the Lamb wave described above can be obtained.
- the elastic wave device of the present invention may utilize plate waves.
- an IDT electrode 94, a reflector 95, and a reflector 96 are provided on the main surface corresponding to the first main surface 14a of the piezoelectric layer 14 shown in FIG. 1 and the like.
- a pair of comb-shaped electrodes are provided on the first main surface 14a, and a plurality of third electrode fingers are provided on the first main surface 14a or the second main surface 14b. is provided.
- the reflector 95 and the reflector 96 are provided on the first main surface 14a of the piezoelectric layer 14 in the first to fifteenth embodiments. That's fine. In this case, it is sufficient that the pair of comb-shaped electrodes and the plurality of third electrode fingers are sandwiched between the reflector 95 and the reflector 96 in a direction orthogonal to the electrode fingers when viewed in plan.
- an acoustic multilayer film 82 as an acoustic reflection film shown in FIG. 38 may be provided between the support member and the piezoelectric layer as the piezoelectric film. good.
- the support member and the piezoelectric film may be arranged such that at least a portion of the support member and at least a portion of the piezoelectric film face each other with the acoustic multilayer film 82 in between.
- low acoustic impedance layers and high acoustic impedance layers may be alternately laminated.
- the acoustic multilayer film 82 may be an acoustic reflection section in an elastic wave device.
- d/p is preferably 0.5 or less, and preferably 0.24 or less. is more preferable. Thereby, even better resonance characteristics can be obtained.
- MR ⁇ 1.75(d/p)+0.075 is satisfied as described above. is preferred. More specifically, when MR is the metallization ratio of the first electrode finger and the third electrode finger, and the second electrode finger and the third electrode finger with respect to the excitation region, MR ⁇ 1.75. It is preferable to satisfy (d/p)+0.075. In this case, spurious components can be suppressed more reliably.
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Abstract
Description
第1~第3の電極指:層構造…圧電層側からTi層/AlCu層/Ti層、各層の厚み…圧電層側から10nm/390nm/4nm
第1~第3の電極指の順序を接続される電位により表わした順序:IN、GND、OUT、GNDの順序が繰り返される。
隣り合う電極指同士の中心間距離:1.4μm
デューティ比:0.3
第1のエッジ領域及び第2のエッジ領域の電極指延伸方向に沿う寸法:1μm
質量付加膜の厚み:25nm
(0°±10°の範囲内,25°~100°,0°~75°[(1-(θ-50)2/2500)]1/2 または 180°-75°[(1-(θ-50)2/2500)]1/2~180°) …式(2)
(0°±10°の範囲内,180°-40°[(1-(ψ-90)2/8100)]1/2~180°,任意のψ) …式(3)
第1~第3の電極指:層構造…圧電層側からTi層/AlCu層/Ti層、各層の厚み…圧電層側から10nm/390nm/4nm
第1~第3の電極指の順序を接続される電位により表わした順序:IN、GND、OUT、GNDの順序が繰り返される。
隣り合う電極指同士の中心間距離:1.4μm
デューティ比:0.3
第1のエッジ領域及び第2のエッジ領域の電極指延伸方向に沿う寸法:1μm
質量付加膜の厚み:25nm
第1~第3の電極指:層構造…圧電層側からTi層/AlCu層/Ti層、各層の厚み…圧電層側から10nm/390nm/4nm
第1~第3の電極指の順序を接続される電位により表わした順序:IN、GND、OUT、GNDの順序が繰り返される。
隣り合う電極指同士の中心間距離:1.4μm
デューティ比:0.3
第1のエッジ領域及び第2のエッジ領域の電極指延伸方向に沿う寸法:1μm
第1~第4のギャップ領域の幅:1.5μmまたは5μm
質量付加膜の厚み:25nm
第1~第3の電極指:層構造…圧電層側からTi層/AlCu層/Ti層、各層の厚み…圧電層側から10nm/390nm/4nm
第1~第3の電極指の順序を接続される電位により表わした順序:IN、GND、OUT、GNDの順序が繰り返される。
隣り合う電極指同士の中心間距離:1.4μm
デューティ比:0.3
電極3と電極4の長さ方向と直交する方向に見たときに、電極3と電極4とが重なっている領域、すなわち励振領域Cの長さ=40μm、電極3,4からなる電極の対数=21対、電極間中心距離=3μm、電極3,4の幅=500nm、d/p=0.133。
絶縁層7:1μmの厚みの酸化ケイ素膜。
支持部材8:Si。
2…圧電層
2a,2b…第1,第2の主面
3,4…電極
5,6…第1,第2のバスバー
7…絶縁層
7a…貫通孔
8…支持部材
8a…貫通孔
9…空洞部
10…弾性波装置
10a…空洞部
11…機能電極
12…圧電性基板
13…支持部材
14…圧電層
14a,14b…第1,第2の主面
15…絶縁層
16…支持基板
17,18…第1,第2の櫛形電極
19…第3の電極
22,23…第1,第2のバスバー
24…接続電極
25~27…第1~第3の電極指
28A,28B…質量付加膜
34…第3のバスバー
34A,34B…第1,第2の接続電極
34a…バー部
34b…突出部
37…絶縁膜
39…第3の電極
48A,48B…質量付加膜
50…弾性波装置
54c…貫通孔
80,81…弾性波装置
82…音響多層膜
82a,82c,82e…低音響インピーダンス層
82b,82d…高音響インピーダンス層
91…弾性波装置
92…支持基板
93…圧電層
94…IDT電極
94a,94b…第1,第2のバスバー
94c,94d…第1,第2の電極指
95,96…反射器
201…圧電膜
201a,201b…第1,第2の主面
451,452…第1,第2領域
C…励振領域
E…交叉領域
F…中央領域
G1~G5…第1~第5のギャップ領域
H1,H2…第1,第2のエッジ領域
R…領域
VP1…仮想平面
Claims (25)
- ニオブ酸リチウムからなる圧電層を含む圧電膜と、
前記圧電層上に設けられており、第1のバスバーと、前記第1のバスバーに一端がそれぞれ接続されている複数の第1の電極指と、を有する第1の櫛形電極と、
前記圧電層上に設けられており、第2のバスバーと、前記第2のバスバーに一端がそれぞれ接続されており、前記複数の第1の電極指と間挿し合っている複数の第2の電極指と、を有する第2の櫛形電極と、
平面視したときに、前記第1の電極指及び前記第2の電極指が並ぶ方向において、前記第1の電極指及び前記第2の電極指と並ぶように、それぞれ前記圧電層上に設けられている複数の第3の電極指と、隣り合う前記第3の電極指同士を接続している接続電極と、を有し、前記第1の櫛形電極および前記第2の櫛形電極とは異なる電位に接続される、第3の電極と、
を備え、
前記第1の櫛形電極及び前記第2の櫛形電極のうち一方が入力電位に接続され、前記第1の櫛形電極及び前記第2の櫛形電極のうち他方が出力電位に接続され、
前記第1の電極指、前記第2の電極指及び前記第3の電極指が並んでいる順序が、前記第1の電極指から開始した場合において、前記第1の電極指、前記第3の電極指、前記第2の電極指及び前記第3の電極指を1周期とする順序であり、
前記接続電極が、隣り合う前記第3の電極指の少なくとも前記第1のバスバー側の先端同士を接続しており、前記接続電極が少なくとも前記第1のバスバー及び前記複数の第2の電極指の先端の間に位置しており、
前記第1の電極指、前記第2の電極指及び前記第3の電極指が延びる方向を電極指延伸方向とし、前記電極指延伸方向と直交する方向を電極指直交方向とし、平面視したときに、前記電極指延伸方向において、前記複数の第2の電極指の先端及び前記接続電極の間に位置しており、前記電極指直交方向に延びている領域が第1のギャップ領域であり、該接続電極及び前記第1のバスバーの間に位置しており、前記電極指直交方向に延びている領域が第2のギャップ領域であり、
平面視したときに、前記電極指延伸方向において、前記複数の第1の電極指の先端及び前記第2のバスバーの間に位置しており、前記接続電極を含まず、かつ前記電極指直交方向に延びている領域、前記第1のギャップ領域並びに前記第2のギャップ領域のうち少なくともいずれかの、少なくとも一部に質量付加膜が設けられている、弾性波装置。 - 複数の前記接続電極が設けられており、前記複数の接続電極のうち一部が、隣り合う前記第3の電極指の前記第2のバスバー側の先端同士を接続しており、
前記複数の第1の電極指の先端及び前記第2のバスバーの間に位置している領域のうち、平面視したときに、前記電極指延伸方向において、前記複数の第1の電極指の先端及び前記接続電極の間に位置しており、前記電極指直交方向に延びている領域が第3のギャップ領域であり、該接続電極及び前記第2のバスバーの間に位置しており、前記電極指直交方向に延びている領域が第4のギャップ領域である、請求項1に記載の弾性波装置。 - 前記第1のギャップ領域及び前記第3のギャップ領域にそれぞれ、前記質量付加膜が設けられている、請求項2に記載の弾性波装置。
- 前記第1のギャップ領域、前記第2のギャップ領域、前記第3のギャップ領域及び前記第4のギャップ領域にそれぞれ、前記質量付加膜が設けられている、請求項3に記載の弾性波装置。
- 前記接続電極が、隣り合う前記第3の電極指の先端のうち、前記第1のバスバー側の先端同士のみを接続しており、
平面視したときに、前記電極指延伸方向において、前記複数の第1の電極指の先端及び前記第2のバスバーの間に位置しており、前記電極指直交方向に延びている領域が第5のギャップ領域である、請求項1に記載の弾性波装置。 - 前記第1のギャップ領域及び前記第5のギャップ領域にそれぞれ、前記質量付加膜が設けられている、請求項5に記載の弾性波装置。
- 前記第1のギャップ領域、前記第2のギャップ領域及び前記第5のギャップ領域にそれぞれ、前記質量付加膜が設けられている、請求項6に記載の弾性波装置。
- 前記電極指直交方向において、前記第1の電極指及び前記第2の電極指が重なり合っている領域が交叉領域であり、前記交叉領域が、中央領域と、前記中央領域を前記電極指延伸方向において挟み、互いに対向するように配置されている第1のエッジ領域及び第2のエッジ領域と、を含み、
前記第1のエッジ領域及び前記第2のエッジ領域にそれぞれ、前記質量付加膜が設けられている、請求項3、4、6または7のいずれか1項に記載の弾性波装置。 - 前記電極指延伸方向から見たときに、1つの前記質量付加膜が、前記複数の第1の電極指、前記複数の第2の電極指及び前記複数の第3の電極指と重なるように設けられている、請求項1~8のいずれか1項に記載の弾性波装置。
- 前記電極指直交方向において、複数の前記質量付加膜が並んでおり、
前記電極指延伸方向から見たときに、1つの前記質量付加膜が、前記複数の第1の電極指、前記複数の第2の電極指及び前記複数の第3の電極指のうち1本の電極指と重なるように設けられている、請求項1~8のいずれか1項に記載の弾性波装置。 - 前記質量付加膜の材料として、酸化ケイ素、酸化タングステン、酸化ニオブ、酸化タンタル及び酸化ハフニウムからなる群から選択された少なくとも1種の誘電体が用いられている、請求項1~10のいずれか1項に記載の弾性波装置。
- ニオブ酸リチウムからなる圧電層を含む圧電膜と、
前記圧電層上に設けられており、第1のバスバーと、前記第1のバスバーに一端がそれぞれ接続されている複数の第1の電極指と、を有する第1の櫛形電極と、
前記圧電層上に設けられており、第2のバスバーと、前記第2のバスバーに一端がそれぞれ接続されており、前記複数の第1の電極指と間挿し合っている複数の第2の電極指と、を有する第2の櫛形電極と、
平面視したときに、前記第1の電極指及び前記第2の電極指が並ぶ方向において、前記第1の電極指及び前記第2の電極指と並ぶように、それぞれ前記圧電層上に設けられている複数の第3の電極指と、隣り合う前記第3の電極指同士を接続している接続電極と、を有し、前記第1の櫛形電極および前記第2の櫛形電極とは異なる電位に接続される、第3の電極と、
を備え、
前記第1の櫛形電極及び前記第2の櫛形電極のうち一方が入力電位に接続され、前記第1の櫛形電極及び前記第2の櫛形電極のうち他方が出力電位に接続され、
前記第1の電極指、前記第2の電極指及び前記第3の電極指が並んでいる順序が、前記第1の電極指から開始した場合において、前記第1の電極指、前記第3の電極指、前記第2の電極指及び前記第3の電極指を1周期とする順序であり、
前記接続電極が、隣り合う前記第3の電極指の少なくとも前記第1のバスバー側の先端同士を接続しており、前記接続電極が少なくとも前記第1のバスバー及び前記複数の第2の電極指の先端の間に位置しており、
前記第1の電極指、前記第2の電極指及び前記第3の電極指が延びる方向を電極指延伸方向とし、前記電極指延伸方向と直交する方向を電極指直交方向とし、平面視したときに、前記電極指延伸方向において、前記複数の第2の電極指の先端及び前記接続電極の間に位置しており、前記電極指直交方向に延びている領域が第1のギャップ領域であり、該接続電極及び前記第1のバスバーの間に位置しており、前記電極指直交方向に延びている領域が第2のギャップ領域であり、
平面視したときに、前記電極指延伸方向において、前記複数の第1の電極指の先端及び前記第2のバスバーの間に位置しており、前記接続電極を含まず、かつ前記電極指直交方向に延びている領域、前記第1のギャップ領域並びに前記第2のギャップ領域のうち少なくともいずれかにおいて、前記圧電膜に貫通孔が設けられており、
平面視したときに、前記貫通孔が設けられている領域において、前記第1の電極指、前記第2の電極指及び前記第3の電極指が設けられていない全ての部分に、前記貫通孔が位置している、弾性波装置。 - 複数の前記接続電極が設けられており、前記複数の接続電極のうち一部が、隣り合う前記第3の電極指の前記第2のバスバー側の先端同士を接続しており、
平面視したときに、前記複数の第1の電極指の先端及び前記第2のバスバーの間に位置している領域のうち、前記電極指延伸方向において、前記複数の第1の電極指の先端及び前記接続電極の間に位置しており、前記電極指直交方向に延びている領域が第3のギャップ領域であり、該接続電極及び前記第2のバスバーの間に位置しており、前記電極指直交方向に延びている領域が第4のギャップ領域である、請求項12に記載の弾性波装置。 - 前記第1のギャップ領域及び前記第3のギャップ領域のそれぞれにおいて、前記圧電膜に前記貫通孔が設けられている、請求項13に記載の弾性波装置。
- 前記第1のギャップ領域、前記第2のギャップ領域、前記第3のギャップ領域及び前記第4のギャップ領域のそれぞれにおいて、前記圧電膜に前記貫通孔が設けられている、請求項14に記載の弾性波装置。
- 前記接続電極が、隣り合う前記第3の電極指の先端のうち、前記第1のバスバー側の先端同士のみを接続しており、
平面視したときに、前記電極指延伸方向において、前記複数の第1の電極指の先端及び前記第2のバスバーの間に位置しており、前記電極指直交方向に延びている領域が第5のギャップ領域である、請求項12に記載の弾性波装置。 - 前記第1のギャップ領域及び前記第5のギャップ領域のそれぞれにおいて、前記圧電膜に前記貫通孔が設けられている、請求項16に記載の弾性波装置。
- 前記第1のギャップ領域、前記第2のギャップ領域及び前記第5のギャップ領域のそれぞれにおいて、前記圧電膜に前記貫通孔が設けられている、請求項17に記載の弾性波装置。
- 厚み滑りモードのバルク波を利用可能に構成されている、請求項1~18のいずれか1項に記載の弾性波装置。
- 前記圧電膜に積層されている支持部材をさらに備え、
前記支持部材及び前記圧電膜の積層方向に沿って見た平面視において、前記支持部材における、前記複数の第1の電極指、前記複数の第2の電極指及び前記複数の第3の電極指と重なる位置に音響反射部が形成されており、
隣り合う前記第1の電極指及び前記第3の電極指の中心間距離、並びに、隣り合う前記第2の電極指及び前記第3の電極指の中心間距離のうち、最も長い距離をpとした場合において、前記圧電膜の厚みをdとした場合、d/pが0.5以下である、請求項1~18のいずれか1項に記載の弾性波装置。 - d/pが0.24以下である、請求項20に記載の弾性波装置。
- 前記音響反射部が空洞部であり、前記支持部材の一部及び前記圧電膜の一部が、前記空洞部を挟み互いに対向するように、前記支持部材と前記圧電膜とが配置されている、請求項20または21に記載の弾性波装置。
- 前記音響反射部が、相対的に音響インピーダンスが高い高音響インピーダンス層と、相対的に音響インピーダンスが低い低音響インピーダンス層と、を含む、音響反射膜であり、前記支持部材の少なくとも一部及び前記圧電膜の少なくとも一部が、前記音響反射膜を挟み互いに対向するように、前記支持部材と前記圧電膜とが配置されている、請求項20または21に記載の弾性波装置。
- 隣り合う前記第1の電極指及び前記第3の電極指が、前記電極指直交方向において重なり合っている領域であり、かつ隣り合う前記第1の電極指及び前記第3の電極指の中心間の領域、並びに、隣り合う前記第2の電極指及び前記第3の電極指が、前記電極指直交方向において重なり合っている領域であり、かつ隣り合う前記第2の電極指及び前記第3の電極指の中心間の領域が励振領域であり、
前記励振領域に対する、前記第1の電極指及び前記第3の電極指、並びに前記第2の電極指及び前記第3の電極指のメタライゼーション比をMRとしたときに、MR≦1.75(d/p)+0.075を満たす、請求項20~23のいずれか1項に記載の弾性波装置。 - 前記圧電層を構成しているニオブ酸リチウムのオイラー角(φ,θ,ψ)が、以下の式(1)、式(2)または式(3)の範囲にある、請求項1~24のいずれか1項に記載の弾性波装置。
(0°±10°の範囲内,0°~25°,任意のψ) …式(1)
(0°±10°の範囲内,25°~100°,0°~75°[(1-(θ-50)2/2500)]1/2 または 180°-75°[(1-(θ-50)2/2500)]1/2~180°) …式(2)
(0°±10°の範囲内,180°-40°[(1-(ψ-90)2/8100)]1/2~180°,任意のψ) …式(3)
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| WO2025187216A1 (ja) * | 2024-03-06 | 2025-09-12 | 株式会社村田製作所 | 弾性波装置 |
| WO2025204159A1 (ja) * | 2024-03-25 | 2025-10-02 | 株式会社村田製作所 | 弾性波装置及びフィルタ装置 |
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| JP2020088459A (ja) * | 2018-11-16 | 2020-06-04 | 日本電波工業株式会社 | 弾性表面波素子 |
| WO2021060521A1 (ja) * | 2019-09-27 | 2021-04-01 | 株式会社村田製作所 | 弾性波装置 |
| JP2022067077A (ja) * | 2020-10-19 | 2022-05-02 | コミサリヤ・ア・レネルジ・アトミク・エ・オ・エネルジ・アルテルナテイブ | 調整可能共振周波数を有する電気機械デバイス |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025187216A1 (ja) * | 2024-03-06 | 2025-09-12 | 株式会社村田製作所 | 弾性波装置 |
| WO2025204159A1 (ja) * | 2024-03-25 | 2025-10-02 | 株式会社村田製作所 | 弾性波装置及びフィルタ装置 |
Also Published As
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|---|---|
| US20250183868A1 (en) | 2025-06-05 |
| CN119605084A (zh) | 2025-03-11 |
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